Ion-beam source with virtual anode

Information

  • Patent Grant
  • 6246059
  • Patent Number
    6,246,059
  • Date Filed
    Saturday, March 6, 1999
    25 years ago
  • Date Issued
    Tuesday, June 12, 2001
    23 years ago
Abstract
A cold-cathode type ion-beam source with a closed-loop ion-emitting slit and electrons drifting in crosses electric and magnetic fields is characterized by the absence of a metal anode which is replaced by a pair of positively charged bodies, such as concentric rings of a conductive material which are located inside a hollow housing of the ion source and are connected to a source of a positive potential. The ion-emitting slit is located between these rings in an upstream position in the direction of propagation of the ion beam. Replacement of a metallic anode with an anodic plasma, i.e., with a “virtual anode”, which is formed by a Penning-type discharge, descreases contamination of the ion beam by products of erosion of a metallic anode and increases the ion beam current, which results in more effective ionization of the workout gas.
Description




FIELD OF THE INVENTION




The present invention relates to the field of ion-emission technique, particularly to cold-cathode type ion-beam sources having closed-loop ion-emitting slits with electrons drifting in crossed electric and magnetic fields.




BACKGROUND OF THE INVENTION AND DESCRIPTION OF THE PRIOR ART




An ion source is a device that ionizes gas molecules and then focuses, accelerates, and emits them as a narrow beam. This beam is then used for various technical and technological purposes such as cleaning, activation, polishing, thin-film coating, or etching.




For better understanding the principle of the present invention, it would be expedient to describe in detail a known ion-beam source of the type to which the invention pertains. Such an ion source is described, e.g., in Russian Patent No. 2,030,807 issued in 1995 to M. Parfenyonok, et al. The patent describes an ion source that comprises a magnetoconductive housing used as a cathode having an ion-emitting slit, an anode arranged in the housing symmetrically with respect to the emitting slit, a magnetomotance source, a working gas supply system, and a source of electric power supply.





FIGS. 1 and 2

schematically illustrate the aforementioned known ion source with a circular ion-beam emitting slit. More specifically,

FIG. 1

is a sectional side view of an ion-beam source with a circular ion-beam emitting slit, and

FIG. 2

is a sectional plan view along line II—II of FIG.


1


.




The ion source of

FIGS. 1 and 2

has a hollow cylindrical housing


40


made of a magnetoconductive material such as Armco steel (a type of a mild steel), which is used as a cathode. Cathode


40


has a cylindrical side wall


42


, a closed flat bottom


44


and a flat top side


46


with a circular ion emitting slit


52


. A working gas supply hole


53


is formed in flat bottom


44


. Flat top side


46


functions as an ion-accelerating electrode. Placed inside the interior of hollow cylindrical housing


40


between bottom


44


and top side


46


is a magnetic system in the form of a cylindrical permanent magnet


66


with poles N and S of opposite polarity. An N-pole faces flat top side


46


and S-pole faces bottom side


44


of the ion source. The purpose of a magnetic system


66


with a closed magnetic circuit formed by parts


66


,


46


,


42


, and


44


is to induce a magnetic field in ion emitting slit


52


. It is understood that this magnetic system is shown only as an example and that it can be formed in a manner described, e.g., in U.S. Pat. No. 4,710,283 issued to Singh, et al. in 1987. A circular annular-shaped anode


54


which is connected to a positive pole


56




a


of an electric power source


56


is arranged in the interior of housing


40


around magnet


66


and concentric thereto. Anode


54


is fixed inside housing


40


by means of a ring


48


made of a non-magnetic dielectric material such as ceramic. Anode


54


has a central opening


55


in which aforementioned permanent magnet


66


is installed with a gap between the outer surface of the magnet and the inner wall of opening


55


. A negative pole


56




b


of electric power source is connected to housing


40


which is grounded at GR.




Located above housing


40


of the ion source of

FIGS. 1 and 2

is a sealed vacuum chamber


57


which has an evacuation port


59


connected to a source of vacuum (not shown). An object OB to be treated is supported within chamber


57


above ion emitting slit


52


by an insulator block


61


rigidly attached to the housing of vacuum chamber


57


by a bolt


63


but so that object OB remains electrically isolated from the housing of vacuum chamber


57


. However, object OB is electrically connected via a line


56




c


to negative pole


56




b


of power source


56


. Since the interior of housing


40


communicates with the interior of vacuum chamber


57


, all lines that electrically connect power source


56


with anode


54


and object OB should pass into the interior of housing


40


and vacuum chamber


57


via conventional commercially-produced electrical feedthrough devices which allow electrical connections with parts and mechanisms of sealed chambers without violation of their sealing conditions. In

FIG. 1

, these feedthrough devices are shown schematically and designated by reference numerals


40




a


and


57




a


. Reference numeral


57




b


designates a seal for sealing connection of vacuum chamber


57


to housing


40


.




The known ion source of the type shown in

FIGS. 1 and 2

is intended for the formation of a unilaterally directed tubular ion beam. The source of

FIGS. 1 and 2

forms a tubular ion beam IB emitted in the direction of arrow A and operates as follows.




Vacuum chamber


57


is evacuated, and a working gas is fed into the interior of housing


40


of the ion source. A magnetic field is generated by magnet


66


in the accelerating gap between anode


54


and cathode


40


, whereby electrons begin to drift in a closed path within the crossed electrical and magnetic fields. A plasma


58


is formed between anode


54


and top cathode plate


46


. When the working gas is passed through an ion-acceleration and ionization gap


52




a


(hereinafter referred to as “ionization gap”), tubular ion beam IB, which is propagated in the axial direction of the ion source shown by an arrow A, is formed in the area of an ion-emitting slit


52


and in ionization gap


52




a


between anode


54


and top cathode plate


46


.




The above description of the operation of the ion source is simplified to ease understanding of the principle of the invention. In reality, the phenomenon of generation of ions in the ion source with a closed-loop drift of electrons in crossed electric and magnetic fields is of a more complicated nature and consists in the following.




When, at starting the ion source, a voltage between anode


54


and cathode


40


reaches a predetermined level, a gas discharge occurs in gap


52




a


. As a result, the electrons, which have been generated as a result of ionization, begin to migrate towards anode


54


under the effect of the electric field, colliding with the molecules of working gas and moving along specific trajectories described below. The space in which the electrons drift is confined between an inner part


46




a


and an outer part


46




b


of top cathode plate


46


, which form ion-emitting slit


52


, and the surface of anode


54


facing top cathode plate


46


.




The principle of operation of the ion-beam source to which the present invention pertains can be better understood after consideration of a direct current vacuum magnetron a part of which is shown schematically on FIG.


1


A. If one assume that in ion source of

FIG. 1

ion-emitting slit


52


is absent and that the magnetic field B between cathode


46


′ and anode


54


′ passes parallel to the planes of the anode and cathode (i.e., perpendicular to the plane of the drawing), then such a system can be considered as the aforementioned direct current vacuum magnetron (hereinafter referred to as “DC magnetron”).




In a DC magnetron, the electrons, which are emitted from cathode


46


′, move toward anode


54


′. However, their trajectory is curved under the effect of magnetic field B. When the strength of magnetic field B exceeds a predetermined critical value B


cr


, the electrons do not reach the surface of anode


54


′ and return back to cathode


46


′. More specifically, the electrons begin to move along cycloidal trajectories shown in FIG.


1


A. As a result, the electrons are accumulated in the space between cathode


46


′ and anode


54


′, and their concentration can reach a significant value. It is known that height H of such a cycloid is equal to so-called doubled Larmor radius R


L


which is represented by the following formula:








R




L




=m




e




V/|e|B,








where m


e


is a mass of the electron, B is the strength of the magnetic field inside the slit, V is a velocity of the electrons in the direction perpendicular to the direction of the magnetic field, and |e| is the charge of the electron (see D. L. Smith. “Thin-Film Deposition”. Principles and Practice. McGraw-Hill Inc., New York, p. 384, 1995).




Based on the principle described above, in the construction of ion-beam source shown in

FIG. 1

, the distance between anode


54


and cathode


46


should be equal to or greater than two Lamnor radii of electrons in the magnetic field.




In contrast to D.C. magnetron shown in

FIG. 1A

, real ion-beam source of

FIG. 1

has a closed-loop ion emitting slit


52


required for forming, extracting, and emitting an ion beam IB toward an object OB. The presence of ion-emitting slit


52


leads to non-uniformities in electric and magnetic fields in the area above anode


54


, i.e., in gap


52




a


and in ion-emitting slit


52


. This makes the electron drift pattern more complicated than shown in FIG.


1


A. The electrons begin to drift not only in gap


52




a


, but also in ion-emitting slit


52


. These drifting electrons are responsible for the following two processes: 1) they collide with molecules of the working gas, ionizes them, and thus form positive ions; 2) they compensate for the positive spatial charge of the ion beam.




It should be noted that strictly speaking electrons do not drift in a plane in the ion-emitting slit. However, for the convenience of the description, here and hereinafter such as expressions as “plane of drift of electrons”, “drift in the direction of propagation of the ion beam”, etc., will be used.




In ion source of

FIG. 1

, the magnetic field is localized essentially between top parts


46




a


and


46




b


of top cathode plate


46


, i.e., in ion-emitting slit


52


and near this slit. This magnetic field practically does not influence on the trajectories of the ions. This is because the Larmor radius of the ion is (m


i


/m


e


)


½


times the Larmor radius of the electron, where m


I


is mass of ion and m


e


is mass of electron. For example, for an ion of argon having m


i


=40 atomic units, the Larmor radius of the ion is 270 times the Larmor radius of the electron.




When a working medium, such as argon which has neutral molecules, is injected into the ionization space inside housing


40


, the molecules are ionized by the electrons present in this space and are accelerated by the electric field. As a result, ions are formed and emitted from the slit towards the object.




In the space above anode


56


and in ion-emitting slit


52


, the electrons are maintained in high concentration under the effect of crossed electric and magnetic fields. This high concentration ensures effective ionization of the working gas and compensates for the abovementioned positive spatial charge. Thus, it becomes possible to form high-intensity ion beams from various gaseous substances.




The diameter of the tubular ion beam formed by means of such an ion source may reach 500 mm and more.




The ion source of the type shown in

FIG. 1

is not limited to a cylindrical configuration and may have an elliptical or an oval-shaped cross section as shown in FIG.


3


.

FIG. 3

is a cross-sectional view of the ion-beam source having an oval cross section. In

FIG. 3

the parts of the ion beam source that correspond to similar parts of the previous embodiment are designated by the same reference numerals with an addition of subscript OV. Structurally, this ion source is the same as the one shown in

FIG. 1

with the exception that a cathode


40




ov


, anode


54




ov


, a magnet


66




ov


, and hence an emitting slit (not shown in FIG.


3


), have an oval-shaped configuration. As a result, a belt-like ion beam having a width of up to 1400 mm and more can be formed. Such an ion beam source is suitable for treating large-surface objects when these objects are passed over ion beam IB emitted through emitting slit


52


.




With 1 to 3 kV voltage on the anode and various working gases, this source makes it possible to obtain ion beams with currents of 0.5 to 1 A. In this case, an average ion energy is within 400 to 1500 eV, and nonuniformity of treatment over the entire width of a 1400 mm-wide object does not exceed ±5%.




However, in the ion sources of the type shown in

FIGS. 1 through 3

, the volume of the space where electrons drift is limited by metallic anode


54


, which should be located close to ion-emitting slit


52


. This decreases the residence time of the electrons in a free state and thus decreases efficiency of ionization of the working gas. When the working medium comprises a polyatomic gas, such as SF


6


, negatively charged ions or high-velocity neutral particles may appear in the near-anode area. These ions and particles may lead to erosion of the anode, and thus to contaminate the ion beam of the source with the material of the anode.




OBJECTS OF THE INVENTION




It is an object of the present invention to provide an ion-beam source with a virtual anode which is characterized by high ion beam current, high efficiency of ionization, reduced degree of contamination of the ion beam with erosion particles due to the absence of a metallic anode, and by possibility of operation of the source in a wider range of pressure.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

is a sectional side view of a known ion-beam source with a circular ion-beam emitting slit.





FIG. 1A

is a schematic sectional view of DC magnetron.





FIG. 2

is a sectional plan view along line II—II of

FIG. 1

illustrating an ion-beam source of a circular cross section.





FIG. 3

is a cross-sectional view similar to the one of

FIG. 2

, illustrating an ion-beam source of an oval cross section.





FIG. 4

is a side sectional view of an ion source of the invention with two concentric positively charged rings located inside a hollow housing, the direction of the ion beam propagation being perpendicular to the plane of drift of the electrons.





FIG. 5

is a fragmental view of an ion source of

FIG. 4

shown on a larger scale.





FIG. 5A

is a sectional view similar to

FIG. 5

illustrating an ion source of the invention with positively-charged rings in different planes.





FIG. 6

is a sectional side view of an ion source of the invention with an external position of magnets and with propagation of the ion beam in the radial inward direction.





FIG. 7

is a sectional side view of an ion source of the invention with a central magnet and with propagation of the ion beam in the radial outward direction.





FIG. 8

is a sectional side view of an ion source of the invention with external positions of the magnets and with propagation of the ion beam in the radial outward direction.





FIG. 9

is a sectional side view of an ion source of the type similar to the one of

FIG. 8

, but with positively charged bodies in the form of disks.





FIG. 10

is a sectional side view of an ion beam source similar to the one shown in

FIG. 8

, but with the hollow cathode operating in conjunction with the Penning discharge and used for efficiency of ionization and for increasing the ion beam current density.




SUMMARY OF THE INVENTION




A cold-cathode type ion-beam source with a closed-loop ion-emitting slit and electrons drifting in crossed electric and magnetic fields is characterized by the absence of a metal anode which is replaced by a virtual anode in the form of a plasma charged positively with respect to the cathode. During operation of the ion-beam source, this plasma is generated by means of one or two or more concentric rings of a conductive material which are located inside a hollow housing of the ion source and are connected to sources of a positive potential. An electric discharge is generated in the vicinity of the aforementioned rings, where a scattered magnetic field is present. Electrons, generated in the electric discharge, move along helical trajectories (along lines of forces of the magnetic field which pass near the positively charged rings) and oscillate between opposite parts of the cathode-housing of the ion source. This increases free life of the electrons in the discharge, thus improving efficiency of ionization of the working gas fed into the source. The discharge that occurs as a result of the phenomenon described above is close to so-called “Penning discharge” and can exist under pressures much lower than those at which a conventional glow discharge may exist. Plasma which is formed in the aforementioned discharge has an electric potential close to that of the aforementioned rings and functions as a virtual anode of the ion source. On the other hand, the main ionization process occurs between an anode and cathode, as well as in an ion-emitting slit, due to collisional ionization of molecules of the working medium by electrons held and drifting in the crossed electric and magnetic fields. Replacement of a metallic anode with an anodic plasma, i.e., with a “virtual anode”, decreases contamination of the ion beam by products of erosion of a metallic anode, and increases the ion beam current, which results in more effective ionization of the working gas.











DETAILED DESCRIPTION OF THE INVENTION




The invention will be described in detail in the form of several embodiments with reference to the accompanying drawings.




An embodiment of

FIG. 4

illustrates an ion source


100


with two concentric positively charged rings located inside a hollow housing. More specifically, ion source


100


is a source of the type where direction of propagation of the ion beam is perpendicular to the plane of drift of the electrons and is intended for treating flat surfaces. Ion source


100


consists of a hollow box-line housing or cathode


102


and a pair of positively charged concentric bodies, e.g., in the form of rings


104


and


106


made of wires of a heat-resistance metal such as tungsten, molybdenum, etc. The wires may have a cross-sectional diameter within the range from fractions of a millimeter to several millimeters. Housing


102


is made of a magnetoconductive material such as Armco steel and is grounded at G


3


. Positively-charged bodies or rings


104


and


106


are space from each other and are supported inside hollow housing


102


, e.g., by a plurality of conductors


108


,


110


,


112


,


114


(only four of which are shown). Rings


104


and


106


are connected, e.g., via conductors


112


,


114


, and their continuations


120


and


122


, which pass through respective feedthrough devices


124




a


,


124




b


and


126




a


,


126




b


, to positive terminals


1




16




a


and


11




8




a


of direct current sources


116


and


118


, respectively. Negative terminals


116




b


and


11




8




b


of these current sources are grounded at G


1


and G


2


. A permanent magnet


128


is placed inside housing


102


in the center of inner ring


106


.




Direct current sources


116


and


118


may apply to rings


104


and


106


different potentials for controlling distribution of plasma density in the area of the virtual anode and, hence, to control parameters and the shape of the ion beam.




A top cathode plate


102




a


of housing or cathode


102


has a closed-loop ion-emitting slit


130


which is concentric to rings


104


and


106


and located above them approximately in the middle of a space S between them. An ion-accelerating gap


140


is formed between rings


104


,


106


and an upper plate


102




a


of cathode


102


.




Housing


102


is installed inside a sealed vacuum chamber


132


and is supported in chamber


132


by an insulating block


134


. Vacuum chamber has an evacuation port


136


which is connected to a vacuum pump (not shown). A working gas supply tube


138


which passes through the bottom of chamber


132


is connected to housing


102


for the supply of a working medium into housing


102


.




An object OB


1


to be treated is supported by an insulating block


142


inside vacuum chamber


132


opposite ion-emitting slit


130


. Object OB


1


is grounded at G


4


by a conductor


144


that passes via a feedthrough device


146


to the outside of chamber


132


.




Similar to the conventional ion source of the type shown in

FIGS. 1-3

, ion-beam source


100


is not limited to a circular configuration and may have an oval or an elliptical form in a plan view of the source.




Ion source


100


operates as follows:




Vacuum chamber


132


is evacuated, and a working gas is fed into the interior of housing


102


of the ion source. A magnetic field shown in

FIG. 5

by broken lines M is generated by magnet


128


in space S between positively-charged bodies or rings


104


and


106


.

FIG. 5

is a fragmental view of ion source


100


shown on a larger scale. Since in ion source


100


of the embodiment of

FIG. 4

conventional metal anode


54


of the type shown in

FIG. 1

is replaced by a pair of positively-charged bodies or rings


104


and


106


, a discharge close to so-called Penning discharge (hereafter referred to as a Penning discharge) is generated between these rings. For the aforementioned magnetic field, rings


104


and


106


function as anodes, and inner surfaces


102




b


and


102




c


function as cathodes. A magnetic field required for maintaining the Penning discharge is a scattered magnetic field generated inside housing


102


in space S between rings


104


and


106


. In the embodiment of

FIGS. 4 and 5

, the Penning discharge magnetic field has orientation essentially perpendicular to the plane passing through both rings


104


and


106


. Although in the embodiment of

FIG. 4

both rings are in the same plane, one ring may be arranged lower or higher with respect to another ring. This is shown in

FIG. 5A

, which is a similar to

FIG. 5

, but illustrates a ring


104




a


raised above concentric ring


106




a


. In this case, the Penning magnetic field will be oriented perpendicular to the plane passing through both rings


106




a


and


104




a


, so that the ion beam IB


1




a


will be a converging beam.




In an axial magnetic field, the Penning discharge creates a dense plasma at pressures lower than those at which a conventional glow discharge may exist, i.e., at pressures of 10


−3


to 10


−6


Torr. An ion-beam source of the invention operates at pressures that fall into an intermediate portion of the aforementioned pressure range. In such a Penning discharge, the electrons move along an extended helical path around lines of force of the axial magnetic field. This increases probability of ionization of the molecules of the working gas and creates conditions for discharge under low pressures in the aforementioned pressure range. Due to oscillation of the electrons between the opposite cathode plates, the free-path time of the electrons is also increased in the Penning discharge. The plasma, which is formed as a result of the gas discharge, has a potential close to that of the anode and therefore functions as a virtual anode. This plasma can be used 1) as an effective source of ions for the formation of an ion beam, and 2) as an effective source of electrons, supplied to the area of the crossed electric and magnetic fields, thus increasing efficiency for ionization of the working gas supplied to the source.




Thus, when the working gas passes through the ion-accelerating space


140


and ion-emitting slit


130


, tubular ion beam IB


1


(FIG.


4


), which is propagated in the axial direction of the ion source shown by an arrow A, is formed in the area of an ion-emitting slit


130


and in an accelerating gap


140


between anode rings


104


,


106


and an upper plate


102




a


of cathode


102


.




Thus, in ion-beam source


100


of the invention, which is based on the use of the Penning discharge, the magnetic field extends in the direction from space S between positively-charged bodies


104


,


106


toward ion-emitting slit


130


, i.e., in the direction of propagation of ion beam IB


1


. Another magnetic field, which is shown in

FIG. 5

by broken lines M


1


, is generated across ion-emitting slit


130


. As in a conventional ion-beam source of this type, magnetic field M


1


is perpendicular to an electric field (not shown) that passes through ion-emitting slit


130


in accordance with the principles described earlier in connection with the description of the prior art.




An important feature of this embodiment of the invention is that ion emitting slit


130


is located between the positively-charged bodies in the upstream point of the propagation of the ions.




As compared to a conventional ion-beam source of the type shown in

FIGS. 1-3

, an advantage of ion source


100


of the invention with a virtual anode is that it operates with a higher efficiency, as a larger number of ions can be extracted from the plasma. Furthermore, the absence of a metal anode reduces contamination caused by erosion of the anode material. The geometry of the ion source


100


prevents leakage of electrons from the discharge volume to the rings, thus increasing free life of the electrons. This is because rings


104


and


106


have surfaces considerably smaller than the surface of a conventional anode plate, such as anode


54


, and therefore probability of collision of electrons with the surface of the rings is lower than in the case of a plate-like electrode. Therefore, the free-path time of the electrons is longer, and the leakage currents are lower.





FIG. 6

is a sectional view of an ion-beam source


200


made in accordance with another embodiment of the invention. In this source, the plane of drift of electrons coincides with or parallel to the direction of propagation of the ion beam. Such an ion-beam source is described, e.g., U.S. Pat. No. 6,130,507 granted to the same applicants on Oct. 7, 2000. The vacuum chamber and the object are not shown. Ion-beam source


200


is a source of the type where the ion beam propagates radially inwardly in the direction parallel to the plane of drift of electrons. It is intended for treating outer surfaces of tubular objects. Ion beam source


200


has a housing or cathode


202


formed by two hollow tubular bodies


204




a


and


204




b


with a flanges


206


and


208


, respectively. Housing


202


has a central opening


203


. Bodies


206


and


208


are made of a magnetoconductive material such as Armco steel and are interconnected by permanent magnets


212


and


214


so that an ion-emitting slit


216


is formed between their ends, which are opposite to flanges


206


and


208


and face each other. Housing


202


is grounded at G


5


. Although only two magnets


212


and


214


are shown in

FIG. 6

, a plurality of such are arranged circumferentially between flanges


206


and


208


so that an annular space S


1


is formed between magnets


206


,


208


, . . . and an outer surface of cylindrical body


204


.




Anode rings


210




a


and


210




b


are connected to respective positive terminals


218




a


,


220




a


of respective direct current sources


218


and


220


. Negative terminals


218




b


and


220




b


of these direct current sources are grounded at G


6


and G


7


, respectively.




Working medium is supplied into space S


1


via a gas supply tube


222


.




Ion source


200


operates as follows:




Vacuum chamber (not shown in

FIG. 6

) is evacuated, and a working gas is fed into the interior of housing


202


of the ion source. A magnetic field (not shown) is generated by magnets


212


,


214


. . . in space S


1


between positively-charged bodies or rings


210




a


and


210




b


. Since in ion source


200


of the embodiment of

FIG. 6

conventional metal anode


54


of the type shown in

FIG. 1

is replaced by a pair of positively-charged bodies or rings


210




a


and


210




b


, a Penning discharge is generated near these rings.




The plasma, which is formed in the discharge, has an electric potential close to the potential of rings


210




a


and


210




b


and functions as a virtual anode of the ion source. On the other hand, the main process of ionization of the working gas occurs between cathode and anode in an ion-accelerating space


240


and in an ion-emitting slit


216


, due to collisional ionization of the molecules of the working gas held and drifting in the crossed electric and magnetic fields. Replacement of the metallic anode by the plasma, i.e., by the virtual anode, ensures effective ionization of the working gas that passes through the plasma. This working gas passes sequentially through zone S


1


of the virtual anode, between positively-charged rings


201




a


and


210




b


, through ion-accelerating gap


240


, and then through ion-emitting slit


216


. The ion beam IB


2


, which has been accelerated to a predetermined energy, is then propagates radially inwardly in the direction shown by arrow B in FIG.


6


.




Drifting electrons held by the magnetic field move along helical trajectories and oscillate between inner surfaces


202




a


and


202




b


of two cylindrical bodies


204




a


and


204




b


of housing


202


. When electrons collide with molecules of working gas, they form positive ions.




An important feature of the invention, i.e., that ion emitting slit


216


is located between the positively-charged bodies in the upstream point of the propagation of the ions, is also present in this embodiment.




As compared to a conventional ion-beam source of the type shown in

FIGS. 1-3

, an advantage of ion source


200


of the invention with a virtual anode is that it operates with a higher efficiency, as a larger number of ions can be extracted from the plasma. Furthermore, the absence of a metal anode reduces contamination caused by erosion of the anode material.





FIG. 7

illustrates another embodiment of the invention, which, in general is similar to that of FIG.


6


and relates to an ion-beam source


300


in which an ion beam


1133


is emitted in the radially outward direction. Except for the fact that a plurality of circumferentially arranged magnets of source of

FIG. 6

are replaced by a central magnet


302


and that positively charged bodies or rings


304


and


36


surround magnet


302


from the outside, ion-beam source


300


is similar to ion-beam source


200


. A housing


308


is formed by two cup-shaped bodies


308




a


and


308




b


having their open ends facing each other to form an ion-emitting slit


310


. Housing


308


is grounded at G


8


, and rings


304


,


306


are connected to positive terminals


312




a


and


314




a


of direct current sources


312


and


314


.




Ion beam source


300


of

FIG. 7

operates in the same manner as ion beam source


200


described earlier with reference to FIG.


6


. However, ion beam


1133


is emitted in the plane of drift of electrons in the radial outward direction. Such an ion source is intended for treating inner surfaces of tubular objects.




Magnetic field M


3


which is required for the Penning discharge is a scattered field that is closed between inner surfaces of cup-shaped bodies


308




a


and


308




b.






Drifting electrons held by the magnetic field move along helical trajectories and oscillate between aforementioned inner surfaces of bodies


308




a


and


308




b


. When electrons collide with molecules of working gas, they form positive ions.




The plasma, which is formed in the discharge, has an electric potential close to the potential of rings


304


and


306


and functions as a virtual anode of the ion source. On the other hand, the main process of ionization of the working gas occurs between cathode and anode in an ion-accelerating space


340


and in an ion-emitting slit


310


, due to collisional ionization of the molecules of the working gas held and drifting in the crossed electric and magnetic fields. Replacement of the metallic anode by the plasma, i.e., by the virtual anode, ensures effective ionization of the working gas that passes through the plasma. This working gas passes sequentially through zone S


2


of the virtual anode, between positively-charged rings


304


and


306


, through ion-accelerating gap


340


, and then through ion-emitting slit


310


. The ion beam IB


3


, which has been accelerated to a predetermined energy, is then propagates radially outwardly in the direction shown by arrow C in FIG.


7


.




An important feature of the invention, i.e., that ion emitting slit


310


is located between the positively-charged bodies in the upstream point of the propagation of the ions, also presents in this embodiment.




As compared to a conventional ion-beam source of the type shown in

FIGS. 1-3

, an advantage of ion source


300


of the invention with a virtual anode is that it operates with a higher efficiency, as a larger number of ions can be extracted from the plasma. Furthermore, the absence of a metal anode reduces contamination caused by erosion of the anode material. As has been mentioned above, ion source


300


is intended for treating inner surfaces of tubular objects.





FIG. 8

illustrates another embodiment of the invention which is similar to the one described above with reference to FIG.


7


and differs from it in that magnets have external position with respect to the housing. More specifically, an ion-beam source


400


has cylindrical housing


408


formed by two cup-shaped bodies


408




a


and


408




b


having their open ends facing each other to form an ion-emitting slit


410


. Housing


408


is grounded at G


9


, and rings


404


,


406


are connected to positive terminals


412




a


and


414




a


of direct current sources


412


and


414


. A plurality of permanent magnets


402




a


,


402




b


. . . (only two of which are shown in

FIG. 8

) are arranged circumferentially around housing


408


.




Ion beam source


400


of

FIG. 8

operates exactly in the same manner as ion beam source


300


described earlier with reference to FIG.


7


. However, the Penning discharge is maintained not only between cylindrical surfaces


409




a


and


409




b


of cup-shaped bodies, as in the embodiment of

FIG. 7

, but also between bottoms


409




c


and


409




d


of cup-shaped bodies


408




a


and


408




b


. This ion source is also intended for treating inner surfaces of tubular objects. In a cross-section perpendicular to plane of the drawing, ion sources shown in

FIGS. 4 through 8

may have a round, elliptical, or oval configuration.




An embodiment of the invention shown in

FIG. 9

is similar to the one of FIG.


8


and differs from it in that positively charged rings


304


and


306


are replaced by two positively charged disks. More specifically, an ion source


500


has a housing


508


formed by two cup-shaped bodies


508




a


and


508




b


having their open ends facing each other to form an ion-emitting slit


510


. Housing


508


is grounded at GI. In this embodiment, rings


404


,


406


of the embodiment of

FIG. 8

are replaced by two disks


504


and


506


connected to positive terminals


512




a


and


514




a


of direct current sources


512


and


514


. A plurality of permanent magnets


502




a


,


502




b


. . . (only two of which are shown in

FIG. 9

) are arranged circumferentially around housing


508


.




Ion beam source


500


of

FIG. 9

operates exactly in the same manner as ion beam source


300


described earlier with reference to FIG.


7


. It is also intended for treating inner surfaces of tubular objects.





FIG. 10

illustrates another embodiment of the invention which is similar to the one described above with reference to FIG.


8


and differs from it by a provision of a hollow cathode for generating a Penning discharge. More specifically, an ion-beam source


600


has cylindrical housing


608


formed by two cup-shaped bodies


608




a


and


608




b


having their open ends facing each other to form an ion-emitting slit


610


. Housing


608


is grounded at G


11


, and rings


604


,


606


are connected to positive terminals


612




a


and


614




a


of direct current sources


612


and


614


. A plurality of permanent magnets


602




a


,


602




b


. . . (only two of which are shown in

FIG. 10

) are arranged circumferentially around housing


608


.




Ion beam source


600


of

FIG. 10

differs from ion beam source


400


of

FIG. 8

in that a cathode for generating the Penning discharge is a hollow cathode formed by metal tubes


609




a


and


609




b


which are electrically connected with grounded housing


608


and are directed axially inwardly from the inner walls of housing


608


toward positively charge rings


604


and


608


. These tubes serve also for the supply of a working gas to a plasma formation space S


3


. For these purpose tubes


609




a


and


609




b


are coaxial with gas-supply tubes


620


and


622


, respectively. If necessary, only one tube, e.g.,


609




a


, can be connected to the gas supply system, and the second tube


609




b


can be used for symmetry of the electric and magnetic fields generated in the Penning discharge.




Ion beam source


600


of

FIG. 10

operates exactly in the same manner as ion beam source


400


described earlier with reference to FIG.


8


. It is also intended for treating inner surfaces of tubular objects.




The hollow cathode of

FIG. 10

increases efficiency of ionization and concentrates plasma, i.e., increases density of the ion beam current.




Thus it has been shown that invention provides an ion-beam source with a virtual anode which is characterized by high ion beam current, high efficiency of ionization, reduced degree of contamination of the ion beam with erosion particles due to the absence of a metallic anode, and by possibility of operation of the source in a wider range of pressure. Although the invention has been shown and described with reference to specific embodiments, it is understood that these embodiments were given only as examples and that any changes and modifications are possible, provided they do not depart from the scope of the appended claims. For example, wires that form positively-charged rings may have a cross-section other than round. Wires can be made of various materials such as tungsten, molybdenum, titanium, carbon, etc. The rings can be replaced by perforated annular bodies, or by thin net-like plates. Although the adjustment of the parameters and shape of the beam by applying different potentials to the rings were described only in connection with the embodiment of

FIG. 4

, it is understood that this principle is applicable to ion sources of any embodiments of the invention. The same is true for positioning the rings in different planes. It has been mentioned that the rings are made of thin wires only in the description of the embodiment of FIG.


4


. It is understood, however, that this is true also for all the embodiment of the invention utilizing ring-like positively-charged bodies.



Claims
  • 1. An ion-beam source of the type having a closed-loop ion emitting slit and electrons drifting in a crossed electric field and first magnetic field, comprising:hollow housing means with at least one closed-loop ion-emitting slit; anode means in said hollow housing means in the form of at least two positively charged bodies arranged on opposite sides of said ion-emitting slit, said ion-emitting slit being located in the upstream position of the propagation of the ion beam with respect to said anode means; first cathode means for operation in conjunction with said anode means in order to generate said first magnetic field for generating and accelerating said ion beam; second cathode means for operation in conjunction with said anode means in order to generate a Penning discharge for a second magnetic field; magnetic field generation means for generating said first magnetic field and said second magnetic field; and working medium supply means for supplying a working medium to a space between said anode means and said first cathode means.
  • 2. The ion-beam source of claim 1, wherein said at least two positively charged bodied are rings made of a conductive material, said ion-beam source having means of a positive electric potential which are connected to said rings.
  • 3. The ion-beam source of claim 2, wherein said first cathode means comprises one part of said hollow housing means, and said second cathode comprises another part of said hollow housing means.
  • 4. The ion-beam source of claim 3, wherein said ion-emitting slit is formed in said one part of said housing and is located above said positively charged bodies and between said at least two rings, said second magnetic field being oriented in the direction substantially perpendicular to a plane passing through said rings.
  • 5. The ion-beam source of claim 4, wherein said rings are concentric rings consisting of an inner ring and an outer ring, said magnetic field generation means being a permanent magnet located in said hollow housing means inside said an inner ring.
  • 6. The ion-beam source of claim 3, wherein said ion-emitting slit is formed in said one part of said housing and is located radially inwardly with respect to said ion-emitting slit and between said at least two rings, said second magnetic field being oriented in the direction substantially parallel to a plane passing through said rings.
  • 7. The ion-beam source of claim 6, wherein said rings are concentric rings arranged one above the other on opposite sides of said ion-beam emitting slit, said magnetic field generation means being a plurality of permanent magnets located outside said hollow housing means outside said rings.
  • 8. The ion-beam source of claim 6, wherein said rings are concentric rings arranged one above the other on opposite sides of said ion-beamn emitting slit, said magnetic field generation means being a permanent magnet located inside said hollow housing means and inside said rings.
  • 9. The ion-beam source of claim 6, wherein said rings are concentric rings arranged one above the other on opposite sides of said ion-beam emitting slit, said magnetic field generation means being a plurality of per manent magnet s located outside of said hollow housing means and outside said rings.
  • 10. The ion-beam source of claim 1, wherein said a t least two positively charged bodied are disks made of a conductive material, said ion-beam source having means of a positive electric potential which are connected to said disks.
  • 11. The ion-beam source of claim 10, wherein said first cathode means comprises one part of said hollow housing means, and said second cathode comprises another part of said hollow housing means.
  • 12. The ion-beam source of claim 11, wherein said disks are arranged one above the other on opposite sides of said ion-beam emitting slit, said magnetic field generation means being a plurality of permanent magnets located outside said hollow housing means and outside with respect to said rings.
  • 13. The ion-beam source of claim 8, wherein said second cathode means is a hollow cathode formed by at least one tube of a magnetoconductive material, which extends radially inwardly from said other part of said hollow housing means toward at least one of said rings.
  • 14. The ion-beam source of claim 13, wherein said hollow cathode means is connected to said working medium supply means for the supply of said working medium into said space between said anode means and said second cathode means.
  • 15. A method of generating an ion beam in an ion-beam source of the type having a closed-loop ion emitting slit and electrons drifting in a crossed electric field and first magnetic field, comprising:providing said ion-beam source with a housing, at least anode means, first cathode means, and second cathode means in said housing, magnetic field generation means, means of a positive potential connected to said anode means, and working medium supply means for supplying a working medium to a space between said anode means and said first cathode means; generating an electric field in the vicinity of and across said closed-loop ion-emitting slit under the effect of said means of a positive potential; generating a first magnetic field perpendicular to said electric field under the effect of said magnetic field generating a second magnetic field between said second cathode means and said anode means; supplying said working medium into said housing to the area between said second cathode means and said anode means; generating a Penning discharge, thus generating a Penning discharge plasma which has a positive potential with respect to said second cathode close to a positive potential of said anode means, thus forming a virtual anode; generating positive ions in said plasma; extracting said positive ions from said plasma by means of an electric field between said virtual anode and said first cathode; and generating an ion beam emitted through said closed-loop ion-emitting slit.
  • 16. The method of claim 15, wherein said anode means comprises at least two bodies, positively charged from said means of positive potential.
  • 17. The method of claim 16, further comprising the step of:adjusting the parameters and shape of said ion beam by supplying to said at least two bodies different positive potentials.
  • 18. An ion-beam source of the type having a closed-loop ion emitting slit and electrons drifting in a crossed electric field and first magnetic field, comprising:a hollow housing with a closed-loop ion-emitting slit; anode means in said hollow housing means in the form of two positively charged rings arranged on opposite sides of said ion-emitting slit, said ion-emitting slit being located in the upstream position of the propagation of the ion beam with respect to said anode means; first cathode means for operation in conjunction with said anode means in order to generate said first magnetic field for generating and accelerating said ion beam; second cathode means for operation in conjunction with said anode means in order to generate a Penning discharge for a second magnetic field; at least one permanent magnet for generating said first magnetic field and said second magnetic field; and working medium supply means for supplying a working medium to a space between said anode means and said first cathode means; said rings being made of a metal wire.
US Referenced Citations (3)
Number Name Date Kind
4126806 Kapetanakos et al. Nov 1978
4710283 Singh et al. Dec 1987
6002208 Maishev et al. Dec 1999
Foreign Referenced Citations (1)
Number Date Country
2030807 Mar 1995 RU
Non-Patent Literature Citations (1)
Entry
Smith, Thin Film Deposition, 1995, pp. 382-387.