Claims
- 1. Smoke or fire sensing system to provide an alarm output signal upon sensing of smoke or fire aerosols within a supervised space having
- an ionization chamber including a source of radiation (R) and at least two electrodes (E1, E2) between which an ion current can flow, the ionization chamber being exposed to the atmosphere in the space to be supervised,
- and an evaluation circuit (A, B) connected to the ionization chamber and responsive to change in ion current flow of the ionization chamber when smoke or fire aerosols penetrate the chamber,
- wherein the evaluation circuit comprises
- two field effect transistors (FET's) (3, 4), each having a source electrode, a drain electrode and a gate electrode;
- two drain resistors (5, 6) and two gate resistors (1, 2), the drain and gate resistors, respectively, being connected to respective FET's (3, 4);
- two cross-connected capacitors (7, 8), one capacitor, each, being respectively connected to the drain electrode of one FET and to the gate electrode of the other FET to provide a cross-connecting feedback path and connect said FET's in a multivibrator oscillator circuit providing for generation of a pulse train formed by cyclically recurring pulses, the pulse repetition rate (PRR) of said pulse train depending on the value of the respective drain and gate resistors (1, 2; 5, 6);
- at least one of said resistors being formed by the ionization chamber to change the pulse repetition rate of the multivibrator oscillator circuit upon presence of smoke or fire aerosols in the supervised space, and hence in the ionization chamber;
- a pulse rate detector connected to the drain electrode of one of the FET's including summing means (16, 17) summing the pulses delivered from the multivibrator oscillator circuit during a predetermined time interval;
- and an alarm response circuit (18, 19, 20,22; 21, 23) providing an alarm output signal when the sum of the pulses in the predetermined time interval changes from a predetermined value.
- 2. System according to claim 1, wherein the field effect transistors (3, 4) comprise p-channel enhancement FET's of the MOS-FET type.
- 3. System according to claim 1, wherein the field effect transistors (3, 4) comprise p-channel enhancement FET's, the source electrodes of the FET's being connected together and to a positive supply source, the free terminals of the gate resistors (1, 2) and of the drain resistors (5, 6) being connected to the negative supply source.
- 4. System according to claim 1, wherein (FIGS. 1-3, 5) at least one of the gate resistors of the FET's is formed as an ionization chamber.
- 5. System according to claim 1, wherein (FIG. 4) at least one of the drain resistors of the FET's is formed by the ionization chamber.
- 6. System according to claim 1, wherein (FIG. 3) both gate resistors (1, 2) are formed by the ionization chamber.
- 7. System according to claim 1, wherein both drain resistors (5, 6) are formed by the ionization chamber.
- 8. System according to claim 1, wherein (FIG. 3) both gate resistors (1, 2) are formed by the ionization chamber, said ionization chamber comprising a double or dual ionization chamber having three electrodes, one of which forms a common electrode and the other two being connected to respective gate electrodes of the FET's (3, 4), the ion current paths between the common electrode and the respective second and third electrodes forming said resistors.
- 9. System according to claim 1, wherein (FIG. 4) both drain resistors (5, 6) are formed by the ionization chamber, said ionization chamber comprising a double or dual ionization chamber having three electrodes, one of which forms a common electrode and the other two being connected to respective drain electrodes of the FET's (3, 4), the ion current paths between the common electrode and the respective second and third electrodes forming said resistors.
- 10. System according to claim 1, wherein (FIG. 5) one of the resistors of two respective resistors is formed as an ionization chamber with unipolar characteristic located in an essentially air-pervious housing (H1) permitting passage of air flow therethrough, the other resistor being formed as an ionization chamber with bipolar characteristic located within a housing (H2) open to the atmosphere but inhibiting air currents therethrough.
- 11. System according to claim 1, wherein (FIG. 5) one of the gate resistors (1) is formed as an ionization chamber with unipolar characteristic, located in an air-pervious housing (H1) permitting air current to flow therethrough, the other gate resistor (2) being formed by an ionization chamber with bipolar characteristic located within a housing (H2) preventing air current from flowing therethrough.
- 12. System according to claim 11, wherein said housings (H1, H2) are electrically connected.
- 13. System according to claim 12, wherein said housings (H1, H2) comprise a mechanical unit or assembly.
- 14. System according to claim 1, wherein the summing means (16, 17) comprises a capacitor (16) and a discharge resistor (17) connected in parallel thereto, the capacitor-resistor combination having said predetermined time constant.
- 15. System according to claim 1, further comprising a coupling capacitor (10, 13) and a diode (15) connected in series therewith, said capacitor-diode series circuit being connected between the drain electrode of one of said FET's and said summing means.
- 16. System according to claim 1, wherein the alarm response circuit is connected to sense, separately, change of the pulse repetition rate of the multivibrator oscillator circuit in increasing, as well as in decreasing direction;
- and said circuit further comprises separate alarm indicators indicating, separately, the respective deviation in increasing or decreasing direction of the pulse repetition rate from said predetermined level.
- 17. System according to claim 16, wherein the alarm response circuit comprises a transistor (18) connected to said summing means and having a first state of conduction when the sum of the pulses in said predetermined interval is at said predetermined level;
- said transistor changing conduction to a higher or lower state upon deviation of the sum of the pulses within said predetermined time interval from said level, the circuit means indicating, respectively, occurrence of said and, the direction of said change.
- 18. System according to claim 16, wherein (FIG. 5) one of the gate resistors (1) is formed as an ionization chamber with unipolar characteristic, located in an air-pervious housing (H1) permitting air current to flow therethrough, the other gate resistor (2) being formed by an ionization chamber with bipolar characteristic located within a housing (H2) preventing air current from flowing therethrough.
- 19. System according to claim 1, wherein the alarm response circuit comprises a switching transistor (18), the base of which is connected to said summing means (16, 17), the operating or working point of said switching transistor being selected to render the transistor conductive when the summed pulses within said predetermined time interval change, in increasing or decreasing direction from said predetermined level.
- 20. System according to claim 19, further comprising adjustable voltage divider means (24, 25) connected to the emitter electrode of the transistor (18) to adjust the switching level thereof.
Priority Claims (2)
Number |
Date |
Country |
Kind |
16598/73 |
Nov 1973 |
CHX |
|
13037/76 |
Oct 1976 |
CHX |
|
Parent Case Info
The present application is a continuation-in-part of my earlier filed application U.S. Ser. No. 525,969, filed Nov. 21, 1974.
US Referenced Citations (6)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
525969 |
Nov 1974 |
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