Claims
- 1. A junction field effect transistor comprising
- a body of silicon including a substrate of single crystal silicon of one conductivity type of relatively low resistivity and a layer of single crystall silicon of the one conductivity type of relatively high resistivity contiguous with said substrate, said layer of silicon having a surface at a surface of the body:
- a layer of adherent, nonconductive, protective material adherent at said surface having openings therein defining alternating source surface areas and gate surface areas;
- a source region of the one conductivity type of relatively low resistivity inset in said layer of silicon of the one conductivity type of relatively high resistivity at each of said source surface areas;
- a gate region of the opposite conductivity type inset in said layer of silicon of the one conductivity type of relatively high resistivity at each of said gate surface areas;
- a recrystallized zone of germanium-silicon composite in each of said source regions and each of said gate regions at said source surface areas and said gate surface areas, respectively:
- a source contact member in ohmic contact with the germanium-silicon composite in each of said source regions at each of said source surface areas;
- a gate contact member in ohmic contact with the germanium-silicon composite in each of said gate regions at said gate surface areas; and
- a drain contact member in ohmic contact with the silicon of the substrate.
Parent Case Info
This is a divisional of copending application Ser. No. 440,930, filed Nov. 14, 1989, now U.S. Pat. No. 4,983,536.
US Referenced Citations (8)
Foreign Referenced Citations (2)
Number |
Date |
Country |
122384 |
Oct 1978 |
JPX |
5562571 |
Apr 1982 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Growth, nucleation & electrical properties of molecular beam epitaxially grown AS-doped GE on Si Substrates, P. Sheldon et al, J Vac. Sci. Tech. A, vol. 4, No. 3, May/Jun. 1986. |
Tamama, T., Voltage-Controlled Negative Resistance In a Submicron Vertical JFET, Solid State Elec., Oct. 1984, pp. 855-866. |
Divisions (1)
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Number |
Date |
Country |
Parent |
440930 |
Nov 1989 |
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