on AIII-BV compounds

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H01L29/452

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/452on AIII-BV compounds

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Patents Grantslast 30 patents

Information Patent Grant
Aluminum-based gallium nitride integrated circuits
- Patent number 12,261,134
- Issue date Mar 25, 2025
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier
- Patent number 12,237,382
- Issue date Feb 25, 2025
- WIN SEMICONDUCTORS CORP.
- Chieh-Chih Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-passivated nitrogen-polar III-nitride transistor
- Patent number 12,230,702
- Issue date Feb 18, 2025
- HRL Laboratories, LLC
- Daniel Denninghoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage gallium nitride vertical PN diode
- Patent number 12,218,255
- Issue date Feb 4, 2025
- National Technology & Engineering Solutions of Sandia, LLC
- Luke Yates
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,206,006
- Issue date Jan 21, 2025
- SK Hynix Inc.
- Young Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,199,173
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,932
- Issue date Dec 3, 2024
- Kabushiki Kaisha Toshiba
- Jumpei Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts for a high-electron-mobility transistor
- Patent number 12,154,961
- Issue date Nov 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Samuel Troughton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with ohmic contacts
- Patent number 12,113,114
- Issue date Oct 8, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride integrated circuits including non-gold-based metall...
- Patent number 12,087,713
- Issue date Sep 10, 2024
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,074,202
- Issue date Aug 27, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor structure with integrated sampling structure...
- Patent number 12,046,664
- Issue date Jul 23, 2024
- WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
- Pengfei Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including surface-treated semiconductor layer
- Patent number 12,046,656
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,027,603
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jheng-Sheng You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,027,615
- Issue date Jul 2, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and methods of manufacturing the same
- Patent number 12,021,124
- Issue date Jun 25, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus including different thermal resistance valu...
- Patent number 12,009,273
- Issue date Jun 11, 2024
- Murata Manufacturing Co., Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and radio-frequency power amplifier module
- Patent number 11,978,786
- Issue date May 7, 2024
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number RE49962
- Issue date May 7, 2024
- Kabushiki Kaisha Toshiba
- Masahiko Kuraguchi
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,955,522
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Cheng-Wei Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multichannel heterostructure and manufact...
- Patent number 11,942,525
- Issue date Mar 26, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,901,433
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jheng-Sheng You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,888,054
- Issue date Jan 30, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,876,120
- Issue date Jan 16, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT)
- Patent number 11,843,046
- Issue date Dec 12, 2023
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,817,318
- Issue date Nov 14, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxial wafer
- Patent number 11,799,011
- Issue date Oct 24, 2023
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,784,248
- Issue date Oct 10, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and nitride semiconductor package
- Patent number 11,769,825
- Issue date Sep 26, 2023
- Rohm Co., Ltd.
- Taketoshi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250072075
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250015152
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006798
- Publication date Jan 2, 2025
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Contact Resistance in Semiconductor Devices with Implanted Regions
- Publication number 20240421193
- Publication date Dec 19, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421220
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH RECESSED OHMIC CONTACTS AND MET...
- Publication number 20240363746
- Publication date Oct 31, 2024
- SWEGAN AB
- Jr-Tai CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Devices Including Beryllium Metallization
- Publication number 20240355738
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Afshin Dadvand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240355887
- Publication date Oct 24, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...
- Publication number 20240347343
- Publication date Oct 17, 2024
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Manato DEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR, RADIO FREQUENCY TRANSISTOR, POWE...
- Publication number 20240322029
- Publication date Sep 26, 2024
- Huawei Technologies Co., Ltd
- Bin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR
- Publication number 20240321634
- Publication date Sep 26, 2024
- Sumitomo Electric Industries, Ltd.
- Yukihiro TSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND HIGH ELECTRON MOBILITY TRANSI...
- Publication number 20240313084
- Publication date Sep 19, 2024
- HiPer Semiconductor Inc.
- WEI-CHIH HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240304686
- Publication date Sep 12, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLI...
- Publication number 20240274688
- Publication date Aug 15, 2024
- Huawei Technologies Co., Ltd
- Zhili ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC CONTACT STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND APPL...
- Publication number 20240258395
- Publication date Aug 1, 2024
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- Wangping WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH UNIFORM ELECTRIC FIELD
- Publication number 20240234521
- Publication date Jul 11, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240213346
- Publication date Jun 27, 2024
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hiroaki KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR
- Publication number 20240162299
- Publication date May 16, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Julien BUCKLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Changeable Polarization Direction
- Publication number 20240162338
- Publication date May 16, 2024
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR
- Publication number 20240128367
- Publication date Apr 18, 2024
- HRL LABORATORIES, LLC
- Daniel DENNINGHOFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION
- Publication number 20240120417
- Publication date Apr 11, 2024
- NEXGEN POWER SYSTEMS, INC.
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CLADDED STRUCTURE AND METHOD OF FABRICATION THEREFOR
- Publication number 20240105808
- Publication date Mar 28, 2024
- NXP USA, Inc.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240097000
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR STRUCTURE WITH INTEGRATED SAMPLING STRUCTURE...
- Publication number 20240088273
- Publication date Mar 14, 2024
- Wuxi China Resources Huajing Microelectronics Co., Ltd
- PENGFEI JIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES WITH REDUCED OHMIC TO OHMIC DIMENSIONS
- Publication number 20240072125
- Publication date Feb 29, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SUBSTRATE,...
- Publication number 20240055257
- Publication date Feb 15, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047527
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS

on AIII-BV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Aluminum-based gallium nitride integrated circuits

Semiconductor device and power amplifier

Self-passivated nitrogen-polar III-nitride transistor

High voltage gallium nitride vertical PN diode

Semiconductor device and method for fabricating the same

Nitride semiconductor device

Semiconductor device

Ohmic contacts for a high-electron-mobility transistor

Transistor with multi-level self-aligned gate and source/drain term...

Transistor with ohmic contacts

Gallium nitride integrated circuits including non-gold-based metall...

Nitride-based semiconductor device and method for manufacturing the...

Vertical semiconductor structure with integrated sampling structure...

Semiconductor device including surface-treated semiconductor layer

Semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor structures and methods of manufacturing the same

Semiconductor apparatus including different thermal resistance valu...

Bipolar transistor and radio-frequency power amplifier module

Semiconductor device

Semiconductor structure and method of forming the same

Semiconductor device with multichannel heterostructure and manufact...

Semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

High electron mobility transistor (HEMT)

GaN devices with ion implanted ohmic contacts and method of fabrica...

Semiconductor epitaxial wafer

Group III-V semiconductor structures having crystalline regrowth la...

Nitride semiconductor device and nitride semiconductor package

Patents Applicationslast 30 patents

COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Low Contact Resistance in Semiconductor Devices with Implanted Regions

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE WITH RECESSED OHMIC CONTACTS AND MET...

Power Semiconductor Devices Including Beryllium Metallization

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...

HIGH ELECTRON MOBILITY TRANSISTOR, RADIO FREQUENCY TRANSISTOR, POWE...

TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR

HIGH ELECTRON MOBILITY TRANSISTOR AND HIGH ELECTRON MOBILITY TRANSI...

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLI...

OHMIC CONTACT STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND APPL...

GaN DEVICE WITH UNIFORM ELECTRIC FIELD

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR

Semiconductor Device with a Changeable Polarization Direction

SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR

NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION

TRANSISTOR WITH CLADDED STRUCTURE AND METHOD OF FABRICATION THEREFOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

VERTICAL SEMICONDUCTOR STRUCTURE WITH INTEGRATED SAMPLING STRUCTURE...

ELECTRONIC DEVICES WITH REDUCED OHMIC TO OHMIC DIMENSIONS

METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SUBSTRATE,...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME