Patent Grant
9810383
In the late 1800's, Thomas Edison invented the light bulb. The conventional light bulb, commonly called the “Edison bulb,” has been used for over one hundred years for a variety of applications including lighting and displays. The conventional light bulb uses a tungsten filament enclosed in a glass bulb sealed in a base, which is screwed into a socket. The socket is coupled to an AC power or DC power source. The conventional light bulb can be found commonly in houses, buildings, and outdoor lightings, and other areas requiring light or displays. Unfortunately, drawbacks exist with the conventional light bulb:
In 1960, the laser was demonstrated by Theodore H. Maiman at Hughes Research Laboratories in Malibu. This laser utilized a solid-state flash lamp-pumped synthetic ruby crystal to produce red laser light at 694 nm. By 1964, blue and green laser output was demonstrated by William Bridges at Hughes Aircraft utilizing a gas laser design called an Argon ion laser. The Ar-ion laser utilized a noble gas as the active medium and produce laser light output in the UV, blue, and green wavelengths including 351 nm, 454.6 nm, 457.9 nm, 465.8 nm, 476.5 nm, 488.0 nm, 496.5 nm, 501.7 nm, 514.5 nm, and 528.7 nm. The Ar-ion laser had the benefit of producing highly directional and focusable light with a narrow spectral output, but the efficiency, size, weight, and cost of the lasers were undesirable.
As laser technology evolved, more efficient lamp pumped solid state laser designs were developed for the red and infrared wavelengths, but these technologies remained a challenge for blue and green and blue lasers. Lamp pumped solid-state lasers were developed in the infrared, and the output wavelength was converted to the visible using specialty crystals with nonlinear optical properties. A green lamp pumped solid-state lasers had 3 stages: electricity powers lamp, lamp excites gain crystal, which lases at 1064 nm, 1064 nm goes into frequency conversion crystal, which converts, to visible 532 nm. The resulting green and blue lasers were called “lamp pumped solid state lasers with second harmonic generation” (LPSS with SHG) and were more efficient than Ar-ion gas lasers, but were still too inefficient, large, expensive, fragile for broad deployment outside of specialty scientific and medical applications. Additionally, the gain crystal used in the solid-state lasers typically had energy storage properties, which made the lasers difficult to modulate at high speeds, which limited its broader deployment.
To improve the efficiency of these visible lasers, high power diode (or semiconductor) lasers were utilized. These “diode pumped solid state lasers with SHG” (DPSS with SHG) had 3 stages: electricity powers 808 nm diode laser, 808 nm excites gain crystal, which lases at 1064 nm, 1064 nm goes into frequency conversion crystal, which converts, to visible 532 nm. The DPSS laser technology extended the life and improved the efficiency of the LPSS lasers, and further commercialization ensue into more high-end specialty industrial, medical, and scientific applications. The change to diode pumping increased the system cost and required precised temperature controls, leaving the laser with substantial size, power consumption, while not addressing the energy storage properties which made the lasers difficult to modulate at high speeds.
As high power laser diodes evolved and new specialty SHG crystals were developed, it became possible to directly convert the output of the infrared diode laser to produce blue and green laser light output. These “directly doubled diode lasers” or SHG diode lasers had 2 stages: electricity powers 1064 nm semiconductor laser, 1064 nm goes into frequency conversion crystal which converts to visible 532 nm green light. These lasers designs are meant to improve the efficiency, cost and size compared to DPSS-SHG lasers, but the specialty diodes and crystals required make this challenging. Additionally, while the diode-SHG lasers have the benefit of being directly modulate-able, they suffer from severe sensitivity to temperature which limits their application.
High power direct diode lasers have been in existence for the past few decades, beginning with laser diodes based on the GaAs material system, then moving to the AlGaAsP and InP material systems. More recently, high power lasers based on GaN operating in the short wavelength visible regime have become of great interest. More specifically, laser diodes operating in the violet, blue, and eventually green regimes are attracting attention due to their application in optical storage, display systems, and others. Currently, high power laser diodes operating in these wavelength regimes are based on polar c-plane GaN. The conventional polar GaN based laser diodes have a number of applications, but unfortunately, the device performance is often inadequate.
The present invention provides a method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. In various embodiments, a laser device comprises number of laser emitters, which emit red, green, or blue electromagnetic radiation, integrated onto a substrate or back member. Merely by way of example, the invention can be applied to applications such as white lighting, multi-colored lighting, lighting for flat panels, medical, metrology, beam projectors and other displays, high intensity lamps, spectroscopy, entertainment, theater, music, and concerts, analysis fraud detection and/or authenticating, tools, water treatment, laser dazzlers, targeting, communications, transformations, transportations, leveling, curing and other chemical treatments, heating, cutting and/or ablating, pumping other optical devices, other optoelectronic devices and related applications, and source lighting and the like.
In a specific embodiment, the present invention provides an optical module apparatus comprising a form factor characterized by a length, a width, and a height. In an example, the height is characterized by a dimension of less than 11 mm, and greater than 1 mm, although there may be variations. The apparatus has a support member and a plurality of gallium and nitrogen containing laser diode devices numbered from 1 through N overlying the support member. Each of the laser device is capable of an emission of a laser beam, where N is greater than 1. The emission can comprise a blue emission ranging from 415-485 nm wavelength and/or a green emission ranging from 500-560 nm wavelength. The support member is configured to transport thermal energy from the plurality of laser diode devices to a heat sink. The apparatus has a free space with a non-guided characteristic capable of transmitting the emission of each of the laser beams from a plurality of laser beams. A combiner is configured to receive a plurality of laser beams of N incoming laser beams from the plurality of gallium and nitrogen containing laser diode devices. The combiner functions to cause an output beam with a selected wavelength range, a spectral width, a power, and a spatial configuration, where N is greater than 1. In an example, the combiner consists of free-space optics to create one or more free space optical beams. At least one of the incoming beams is characterized by a polarization purity of greater than 60% and less than 100%. As used herein, the term “polarization purity” means greater than 50% of the emitted electromagnetic radiation is in a substantially similar polarization state such as the transverse electric (TE) or transverse magnetic (TM) polarization states, but can have other meanings consistent with ordinary meaning In an example, an operating optical output power of at least 5 W to 200 W, characterizes the output beam from the plurality of laser beams. The apparatus also has an electrical input interface configured to couple electrical input power to the plurality of laser diode devices and a thermal impedance of less than 4 degrees Celsius per electrical watt of electrical input power characterizing a thermal path from the laser device to a heat sink. The apparatus has an optical output power degradation of less than 20% in 500 hours when operated within the output power range with a constant input current at a base temperature of 25 degrees Celsius.
In an alternative specific embodiment, the present invention provides an optical module apparatus. The apparatus has a form factor characterized by a length, a width, and a height. In an example, the height is characterized by a dimension of less than 11 mm and greater than 1 mm, although there may be variations. In a specific embodiment, the apparatus has a support member and a plurality of gallium and nitrogen containing laser diode devices numbered from 1 through N overlying the support member. Each of the laser device is capable of an emission of a laser beam, where N is greater than 1. The emission comprises a blue emission ranging from 415 nm to 485 nm wavelength and/or a green emission ranging from 500 nm to 560 nm wavelength. The support member is configured to transport thermal energy from the plurality of laser diode devices to a heat sink. The apparatus has a combiner configured to receive a plurality of laser beams of N incoming laser beams. The apparatus has at least one of the incoming beams characterized by a polarization purity of greater than 60% and less than 100% although there can be variations. The apparatus has a predetermined rated operating optical output power range including at least 5 W and greater. The apparatus has an electrical input interface configured to couple electrical power to the plurality of laser diode devices and a thermal impedance of less than 4 degrees Celsius per electrical watt of input power characterizing a thermal path from the laser device to a heat sink.
In yet an alternative embodiment, the present invention provides an optical module apparatus. The apparatus has a form factor characterized by a length, a width, and a height. In an example, the height is characterized by a dimension of less than 11 mm and greater than 1 mm, although there may be variations. The apparatus has a support member and a plurality of gallium and nitrogen containing laser diode devices numbered from 1 through N overlying the support member. Each of the laser device is capable of an emission of a laser beam, where N is greater than 1. The emission comprises a blue emission ranging from 415 nm to 485 nm wavelength and/or a green emission ranging from 500 nm to 560 nm wavelength. Each of the gallium and nitrogen containing laser diodes is characterized by a nonpolar or a semipolar oriented surface region. In an example, the apparatus has a laser stripe region overlying the nonpolar or semipolar surface region. Each of the laser stripe regions is oriented in a c-direction or a projection of a c-direction. In an example, the laser stripe region is characterized by a first end and a second end. The support member is configured to transport thermal energy from the plurality of laser diode devices to a heat sink. The apparatus has a combiner configured to receive a plurality of laser beams of N incoming laser beams. The combiner functions to cause an output beam with a selected wavelength range, spectral width, power, and spatial configuration, where N is greater than 1. The apparatus has at least one of the incoming beams characterized by a polarization purity of greater than 60% up to 100% although there may be variations. In an example, the optical module apparatus has a predetermined rated operating optical output power range including at least 5 W and greater. The apparatus has an electrical input interface configured to couple electrical power to the plurality of laser diode devices. A thermal impedance of less than 4 degrees Celsius per electrical watt of input power characterizes a thermal path from the laser device to a heat sink.
In an example, the nonpolar or semipolar oriented surface region is a semipolar orientation characterized by the {20-21} or {20-2-1} plane, or alternatively, the nonpolar or semipolar oriented surface region is a semipolar orientation characterized by the {30-31} or {30-3-1} plane. Each of these planes may be slightly or substantially off cut depending upon the embodiment. In an example, the nonpolar or semipolar oriented surface region is a nonpolar orientation characterized by m-plane. In an example, each of the laser devices is operable in an environment comprising at least 150,000 parts per-million (ppm) oxygen gas. Each of the laser device is substantially free from efficiency degradation over a time period from the oxygen gas. In an example, each of the laser devices comprises a front facet and a rear facet.
Additional benefits are achieved over pre-existing techniques using the present invention. In particular, the present invention enables a cost-effective optical device for laser applications, including laser bar for projectors, and the like. In a specific embodiment, the present optical device can be manufactured in a relatively simple and cost effective manner. Depending upon the embodiment, the present apparatus and method can be manufactured using conventional materials and/or methods according to one of ordinary skill in the art. The present laser device uses a nonpolar or semipolar gallium nitride material capable of achieving a violet or blue or green emission, among others. In one or more embodiments, the laser device is capable of emitting long wavelengths such as those ranging from about 430 nm to 470 nm for the blue wavelength region or 500 nm to about 540 nm for the green wavelength region, but can be others such as the violet region. Of course, there can be other variations, modifications, and alternatives. Depending upon the embodiment, one or more of these benefits may be achieved. These and other benefits may be described throughout the present specification and more particularly below.
A further understanding of the nature and advantages of the present invention may be realized by reference to the latter portions of the specification and attached drawings.
Optical module devices that combine the light output from multiple laser chips and/or laser bars and couple the light into a common fiber or medium are well established in the red and infrared wavelength regimes. Such module devices serve applications where very high powers (>10 W to >100 W) and/or very high brightness are required or where a remote light source can serve an increased functionality. Laser diodes based on GaN that emit in the blue and green wavelength regime have seen improvements in efficiency, power, and lifetime over the years. Optical module devices leveraging these high performance blue and green GaN-based lasers are sure to emerge as key light sources providing greater than 5 W to greater than 50 W or 100 W or 200 W of optical output power in existing and emerging applications where high brightness or remote sources of blue and/or green light are needed. Such applications include high brightness displays, specialty lighting, medical devices, defense systems, and others.
A popular and efficient way to combine the light from the emitters within the module is by direct fiber coupling. In this configuration the laser chips or bars would be mounted onto a carrier and the emitted light would be coupled into a fiber by either using a close optic such as fast axis collimating (FAC) lens first then the fiber, or directly using a fiber with a shaped lens formed at the end facing the laser. In either case the fiber is positioned close to the laser facet. Typical fiber dimensions ranges from 100 μm to 800 μm, and with a NA of 0.18 or greater. In these configurations the fibers are usually in close vicinity to the laser diode facet region, which are well-known for their sensitivity to optical or other damage mechanisms. Typical distances of the optical fiber from the laser diode facet would be about 0.2 mm to about 10 mm. Although this a proven method for combining the optical outputs from red or infrared laser diodes, drawbacks could exist when fiber coupling blue or green devices based on conventional c-plane based GaN lasers. One such drawback is reduced lifetime and rapid degradation of the optical output from the module. Such reliability issues could result from specific light behaviors due to close proximity of optical surfaces and especially fiber end to the emitting facet of the laser. These and other drawbacks have been overcome with the present method and devices, which are described throughout the present specification and more particularly below.
The present invention provides high power GaN-based laser devices and related methods for making and using these laser devices. Specifically, laser devices are configured to operate with 0.5 W to 5 W or 5 W to 20 W or 20 W to 100 W or 200 W, or greater of output power in the blue or green wavelength regimes. The laser devices are manufactured from bulk nonpolar or semipolar gallium and nitrogen containing substrates. As mentioned above, the output wavelength of the laser devices can be in the blue wavelength region of 425 nm to 475 nm and the green wavelength region 500 nm to 545 nm. Laser devices according to embodiments of the present invention can also operate in wavelengths such as violet (395 nm to 425 nm) and blue-green (475 nm to 505 nm). The laser devices can be used in various applications, such as projection system where a high power laser is used to project video content.
In certain embodiments, GaN surface orientation is substantially in the {20-21} orientation, and the device has a laser stripe region formed overlying a portion of the off-cut crystalline orientation surface region. For example, the laser stripe region is characterized by a cavity orientation substantially in a projection of a c-direction, which is substantially normal to an a-direction. In a specific embodiment, the laser strip region has a first end 107 and a second end 109. In a preferred embodiment, the device is formed on a projection of a c-direction on a {20-21} gallium and nitrogen containing substrate having a pair of cleaved mirror structures, which face each other.
In a preferred embodiment, the device has a first cleaved facet provided on the first end of the laser stripe region and a second cleaved facet provided on the second end of the laser stripe region. In one or more embodiments, the first cleaved is substantially parallel with the second cleaved facet. Mirror surfaces are formed on each of the cleaved surfaces. The first cleaved facet comprises a first mirror surface. In a preferred embodiment, the first mirror surface is provided by a top-side skip-scribe scribing and breaking process. The scribing process can use any suitable techniques, such as a diamond scribe or laser scribe or combinations. In a specific embodiment, the first mirror surface comprises a reflective coating. The reflective coating is selected from silicon dioxide, hafnia, and titania, tantalum pentoxide, zirconia, including combinations, and the like. The first mirror surface can also have an anti-reflective coating.
Also in a preferred embodiment, the second cleaved facet comprises a second mirror surface. The second mirror surface is provided by a top side skip-scribe scribing and breaking process according to a specific embodiment. Preferably, the scribing is diamond scribed or laser scribed or the like. In a specific embodiment, the second mirror surface comprises a reflective coating, such as silicon dioxide, hafnia, and titania, tantalum pentoxide, zirconia, combinations, and the like. In a specific embodiment, the second mirror surface has an anti-reflective coating.
In a specific embodiment on a nonpolar Ga-containing substrate, the device is characterized by a spontaneously emitted light is polarized in substantially perpendicular to the c-direction. In a preferred embodiment, the spontaneously emitted light is characterized by a polarization ratio of greater than 0.1 to about 1 perpendicular to the c-direction. In a preferred embodiment, the spontaneously emitted light characterized by a wavelength ranging from about 430 nanometers to about 470 nm to yield a blue emission, or about 500 nanometers to about 540 nanometers to yield a green emission, and others. For example, the spontaneously emitted light can be violet (e.g., 395 to 420 nanometers), blue (e.g., 430 to 470 nm); green (e.g., 500 to 540 nm), or others. In a preferred embodiment, the spontaneously emitted light is highly polarized and is characterized by a polarization ratio of greater than 0.4. In another specific embodiment on a semipolar {20-21} Ga-containing substrate, the device is also characterized by a spontaneously emitted light is polarized in substantially parallel to the a-direction or perpendicular to the cavity direction, which is oriented in the projection of the c-direction.
In a specific embodiment, the present invention provides an alternative device structure capable of emitting 501 nm and greater light in a ridge laser embodiment. The device is provided with one or more of the following epitaxially grown elements:
an n-GaN cladding layer with a thickness from 100 nm to 3000 nm with Si doping level of 5E17 cm−3 to 3E18 cm−3;
an n-side SCH layer comprised of InGaN with molar fraction of indium of between 2% and 10% and thickness from 20 nm to 200 nm;
multiple quantum well active region layers comprised of at least two 2.0 nm to 8.5 nm InGaN quantum wells separated by 1.5 nm and greater, and optionally up to about 12 nm, GaN or InGaN barriers;
a p-side SCH layer comprised of InGaN with molar a fraction of indium of between 1% and 10% and a thickness from 15 nm to 100 nm or an upper GaN-guide layer;
an electron blocking layer comprised of AlGaN with molar fraction of aluminum of between 6% and 22% and thickness from 5 nm to 20 nm and doped with Mg;
a p-GaN cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 cm−3 to 2E19 cm-3; and
a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 cm−3 to 1E21 cm−3.
An n-type AluInvGa1-u-vN layer, where 0≦u, v, u+v≦1, is deposited on the substrate. The carrier concentration may lie in the range between about 1016 cm−3 and 1020 cm−3. The deposition may be performed using metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
For example, the bulk GaN substrate is placed on a susceptor in an MOCVD reactor. After closing, evacuating, and back-filling the reactor (or using a load lock configuration) to atmospheric pressure, the susceptor is heated to a temperature between about 1000 and about 1200 degrees Celsius in the presence of a nitrogen-containing gas. The susceptor is heated to approximately 900 to 1200 degrees Celsius under flowing ammonia. A flow of a gallium-containing metalorganic precursor, such as trimethylgallium (TMG) or triethylgallium (TEG) is initiated, in a carrier gas, at a total rate between approximately 1 and 50 standard cubic centimeters per minute (sccm). The carrier gas may comprise hydrogen, helium, nitrogen, or argon. The ratio of the flow rate of the group V precursor (ammonia) to that of the group III precursor (trimethylgallium, triethylgallium, trimethylindium, trimethylaluminum) during growth is between about 2000 and about 12000. A flow of disilane in a carrier gas, with a total flow rate of between about 0.1 sccm and 10 sccm, is initiated.
In one embodiment, the laser stripe region is p-type gallium nitride layer 209. The laser stripe is provided by a dry etching process, but wet etching can be used. The dry etching process is an inductively coupled process using chlorine bearing species or a reactive ion etching process using similar chemistries. The chlorine bearing species are commonly derived from chlorine gas or the like. The device also has an overlying dielectric region, which exposes 213 contact region. The dielectric region is an oxide such as silicon dioxide or silicon nitride, and a contact region is coupled to an overlying metal layer 215. The overlying metal layer is preferably a multilayered structure containing gold and platinum (Pt/Au), palladium and gold (Pd/Au), or nickel gold (Ni/Au).
Active region 207 preferably includes one to ten quantum well regions or a double heterostructure region for light emission. Following deposition of the n-type AluInvGa1-u-vN layer to achieve a desired thickness, an active layer is deposited. The quantum wells are preferably InGaN with GaN, AlGaN, InAlGaN, or InGaN barrier layers separating them. In other embodiments, the well layers and barrier layers comprise AlwInxGa1-w-xN and AlyInzGa1-y-zN, respectively, where 0≦w, x, y, z, w+x, y+z≦1, where w<u, y and/or x>v, z so that the bandgap of the well layer(s) is less than that of the barrier layer(s) and the n-type layer. The well layers and barrier layers each have a thickness between about 1 nm and about 20 nm. The composition and structure of the active layer are chosen to provide light emission at a preselected wavelength. The active layer may be left undoped (or unintentionally doped) or may be doped n-type or p-type.
The active region can also include an electron blocking region, and a separate confinement heterostructure. The electron-blocking layer may comprise AlsIntGa1-s-tN, where 0≦s, t, s+t≦1, with a higher bandgap than the active layer, and may be doped p-type. In one specific embodiment, the electron blocking layer includes AlGaN. In another embodiment, the electron blocking layer includes an AlGaN/GaN super-lattice structure, comprising alternating layers of AlGaN and GaN, each with a thickness between about 0.2 nm and about 5 nm.
As noted, the p-type gallium nitride structure is deposited above the electron blocking layer and active layer(s). The p-type layer may be doped with Mg, to a level between about 1016 cm−3 and 1022 cm−3, with a thickness between about 5 nm and about 1000 nm. The outermost 1-50 nm of the p-type layer may be doped more heavily than the rest of the layer, so as to enable an improved electrical contact. The device also has an overlying dielectric region, for example, silicon dioxide, which exposes 213 contact region.
The metal contact is made of suitable material such as silver, gold, aluminum, nickel, platinum, rhodium, palladium, chromium, or the like. The contact may be deposited by thermal evaporation, electron beam evaporation, electroplating, sputtering, or another suitable technique. In a preferred embodiment, the electrical contact serves as a p-type electrode for the optical device. In another embodiment, the electrical contact serves as an n-type electrode for the optical device. The laser devices illustrated in
In various embodiments, the present invention realizes high output power from a diode laser is by widening one or more portions of the laser cavity member from the single lateral mode regime of 1.0-3.0 μm to the multi-lateral mode range 5.0-20 μm. In some cases, laser diodes having cavities at a width of 50 μm or greater are employed.
The laser stripe length, or cavity length ranges from 300 to 3000 μm and employs growth and fabrication techniques such as those described in U.S. patent application Ser. No. 12/759,273, filed Apr. 13, 2010, which is incorporated by reference herein. As an example, laser diodes are fabricated on nonpolar or semipolar gallium containing substrates, where the internal electric fields are substantially eliminated or mitigated relative to polar c-plane oriented devices. It is to be appreciated that reduction in internal fields often enables more efficient radiative recombination. Further, the heavy hole mass is expected to be lighter on nonpolar and semipolar substrates, such that better gain properties from the lasers can be achieved.
One difficulty with fabricating high-power GaN-based lasers with wide cavity designs is a phenomenon where the optical field profile in the lateral direction of the cavity becomes asymmetric where there are local bright regions and local dim regions. Such behavior is often referred to as filamenting and can be induced by lateral variations in the index of refraction or thermal profile, which alters the mode guiding characteristics. Such behavior can also be a result of non-uniformities in the local gain/loss caused by non-uniform injection of carriers into the active region or current crowding where current is preferentially conducted through the outer regions of the laser cavity. That is, the current injected through the p-side electrode tends towards the edge of the etched p-cladding ridge/stripe required for lateral waveguiding, and then conducted downward where the holes recombine with electrons primarily near the side of the stripe. Regardless of the cause, such filamenting or non-symmetric optical field profiles can lead to degraded laser performance as the stripe width is increased.
The substrate shown in
Depending on the application, a high power laser device can have a number of cavity members. The number of cavity members, n, can range from 2 to 5, 10, or even 20. The lateral spacing, or the distance separating one cavity member from another, can range from 2 μm to 25 μm, depending upon the requirements of the laser diode. In various embodiments, the length of the cavity members can range from 300 μm to 2000 μm, and in some cases as much as 3000 μm.
In a preferred embodiment, laser emitters (e.g., cavity members as shown) are arranged as a linear array on a single chip to emit blue or green laser light. The emitters are substantially parallel to one another, and they can be separated by 3 μm to 15 μm, by 15 μm to 75 μm, by 75 μm to 150 μm, or by 150 μm to 300 μm. The number of emitters in the array can vary from 3 to 15 or from 15 to 30, from 30 to 50, or from 50 to 100, or more than 100. Each emitter may produce an average output power of 25 to 50 mW, 50 to 100 mW, 100 to 250 mW, 250 to 500 mW, 500 to 1000 mW, or greater than 1 W. Thus the total output power of the laser device having multiple emitters can range from 200 to 500 mW, 500 to 1000 mW, 1-2 W, 2-5 W, 5-10 W, 10-20 W, and greater than 20 W.
With current technology, the dimension of the individual emitters would be widths of 1.0 to 3.0 μm, 3.0 to 6.0 μm, 6.0 to 10.0 μm, 10 to 20.0 μm, 20 to 30 μm, and greater than 30 μm. The lengths range from 400 μm to 800 μm, 800 μm to 1200 μm, 1200 μm to 1600 μm, or greater than 1600 μm.
The cavity member has a front end and a back end. The laser device is configured to emit laser beam through the front mirror at the front end. The front end can have anti-reflective coating or no coating at all, thereby allowing radiation to pass through the mirror without excessive reflectivity. Since no laser beam is to be emitted from the back end of the cavity member, the back mirror is configured to reflect the radiation back into the cavity. For example, the back mirror includes highly reflective coating with a reflectivity greater than 85% or 95%.
The cavity members are electrically coupled to each other by the electrode 304. The laser diodes, each having an electrical contact through its cavity member, share a common n-side electrode. Depending on the application, the n-side electrode can be electrically coupled to the cavity members in different configurations. In a preferred embodiment, the common n-side electrode is electrically coupled to the bottom side of the substrate. In certain embodiments, re-contact is on the top of the substrate, and the connection is formed by etching deep down into the substrate from the top and then depositing metal contacts. For example, laser diodes are electrically coupled to one another in a parallel configuration. In this configuration, when current is applied to the electrodes, all laser cavities can be pumped relatively equally. Further, since the ridge widths will be relatively narrow in the 1.0 to 5.0 μm range, the center of the cavity member will be in close vicinity to the edges of the ridge (e.g., via) such that current crowding or non-uniform injection will be mitigated. Most importantly, filamenting can be prevented and the lateral optical field profile can be symmetric in such narrow cavities as shown in
It is to be appreciated that the laser device with multiple cavity members has an effective ridge width of n×w, which could easily approach the width of conventional high power lasers having a width in the 10 to 50 μm range. Typical lengths of this multi-stripe laser could range from 400 μm to 2000 μm, but could be as much as 3000 μm. A schematic illustration of a conventional single stripe narrow ridge emitter intended for lower power applications of 5 to 500 mW is shown in
The laser device illustrated in
A typical application of laser devices is to emit a single ray of laser light. As the laser device includes a number of emitters, an optical member is needed to combine or collimate output from the emitters.
In
In a preferred embodiment, the array of emitters of the laser bar is manufactured from a gallium nitride substrate. The substrate can have surface characterized by a semi-polar or non-polar orientation. The gallium nitride material allows the laser device to be packaged without hermetic sealing. More specifically, by using the gallium nitride material, the laser bar is substantially free from AlGaN or InAlGaN claddings. When the emitter is substantially in proximity to p-type material, the laser device is substantially free from p-type AlGaN or p-type InAlGaN material. Typically, AlGaN or InAlGaN claddings are unstable when operating in normal atmosphere, as they interact with oxygen. To address this problem, conventional laser devices comprising AlGaN or InAlGaN material are hermetically sealed to prevent interaction between AlGaN or InAlGaN and air. In contrast, since AlGaN or InAlGaN claddings are not present in laser devices according to embodiments of the present invention, the laser devices does not need to be hermetically packaged. The cost of manufacturing laser devices and packages according to embodiments of the present invention can be lower than that of conventional laser devices by eliminating the need for hermetic packaging.
In an example, the present invention provides an alternative optical coupling technique to combine the optical outputs from the individual emitters or laser bars within the optical module. By using free-space optics to combine all of the optical outputs into one or multiple free-space laser beams first, and then coupling the free space laser beam(s) directly to the application, or to an optical fiber which would then be coupled to the application, the degradation mechanism associated with direct fiber coupling would be avoided. In this configuration the optical fiber is positioned in a remote location (10 to 100 mm) relative to the laser diode facet region. As a result, the free-space coupling optical module emitting blue or green light could possess a long lifetime for reliable operation.
In an alternative embodiment of this invention, nonpolar or semipolar GaN-based laser diodes are employed in the module. Due to the alternative facet cleavage plane in such lasers based on nonpolar/semipolar orientations, and a waveguide design possibility that does not include AlGaN cladding layers, such laser diodes could be compatible with direct fiber coupling without the rapid degradation demonstrated for conventional c-plane devices.
In an alternative embodiment, the present invention provides an optical module device combining the emissions of N laser beams, where N is greater than 1. The method of optical combining includes free-space optics to create one or more free space optical beams. The optical emission comprises a blue emission in the 415 nm to 485 nm wavelength range and/or a green emission in the 500 nm to 560 nm wavelength range. The optical module device comprised to operate with over 5 W, over 20 W, or over 50 W. The optical module device is characterized by an optical output power degradation of less than 20% in 500 hours when operated at a constant input current.
In certain embodiments, optical modules provided by the present disclosure comprise a plurality of laser diode devices numbered from 1 through N overlying the support member, each of the plurality of laser diode devices configured to emit a laser beam. The laser diode devices may include devices that emit in the violet region (390-430 nm), the blue region (430 nm to 490 nm), the green region (490 nm to 560 nm), the yellow region (560 nm to 600 nm), or in the red region (625 nm to 670 nm) of the electromagnetic spectrum. An optical module may include a combination of laser diode devices emitting in different parts of the electromagnetic spectrum In certain embodiments, the combination of laser diodes is selected to produce a combined output radiation having a desired wavelength distribution. In certain embodiments, the combined output can be a white light output. The laser diode devices may be based on different semiconductor technology such gallium and nitrogen containing devices or AlInGa although other suitable technologies may be employed. In certain embodiments, at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices configured to emit a laser beam characterized by emission selected from blue emission with a wavelength ranging from 415 nm to 485 nm, green emission with a wavelength ranging from 500 nm to 560 nm, and a combination thereof. In certain embodiments at least some of the plurality of laser diode devices comprise AlInGaP laser diode device configured to emit a laser beam characterized by red emission with a wavelength ranging from 625 nm to 670 nm.
In a specific embodiment, the package can be used in a variety of applications. The applications include power scaling (modular possibility), spectral broadening (select lasers with slight wavelength shift for broader spectral characteristics). The application can also include multicolor monolithic integration such as blue-blue, blue-green, RGB (Red-Blue-Green), and others.
In a specific embodiment, the present laser device can be configured on a variety of packages. As an example, the packages include TO9 Can, TO56 Can, flat package(s), CS-Mount, G-Mount, C-Mount, micro-channel cooled package(s), and others. In other examples, the multiple laser configuration can have an operating power of 1.5 Watts, 3, Watts, 6 Watts, 10 Watts, and greater. In an example, the present optical device, including multiple emitters, are free from any optical combiners, which lead to inefficiencies. In other examples, optical combiners may be included and configured with the multiple emitter devices. Additionally, the plurality of laser devices (i.e., emitters) may be an array of laser device configured on non-polar oriented GaN or semi-polar oriented GaN or any combination of these, among others.
As used herein, the term GaN substrate is associated with Group III-nitride based materials including GaN, InGaN, AlGaN, or other Group III containing alloys or compositions that are used as starting materials. Such starting materials include polar GaN substrates (i.e., substrate where the largest area surface is nominally an (h k l) plane wherein h=k=0, and l is non-zero), non-polar GaN substrates (i.e., substrate material where the largest area surface is oriented at an angle ranging from about 80-100 degrees from the polar orientation described above towards an (h k l) plane wherein l=0, and at least one of h and k is non-zero) or semi-polar GaN substrates (i.e., substrate material where the largest area surface is oriented at an angle ranging from about +0.1 to 80 degrees or 110-179.9 degrees from the polar orientation described above towards an (h k l) plane wherein l=0, and at least one of h and k is non-zero). Of course, there can be other variations, modifications, and alternatives.
In other examples, the present device is operable in an environment comprising at least 150,000 ppm oxygen gas. The laser device is substantially free from AlGaN or InAlGaN claddings. The laser device is substantially free from p-type AlGaN or p-type InAlGaN claddings. Each of the emitter comprises a front facet and a rear facet, the front facet being substantially free from coatings. Each of the emitter comprises a front facet and a rear facet, the rear facet comprising a reflective coating. In other examples, the device also has a micro-channel cooler thermally coupled to the substrate. The device also has a submount characterized by a coefficient of thermal expansion (CTE) associated with the substrate and a heat sink. The submount coupled to the substrate, the submount comprises aluminum nitride material, BeO, diamond, composite diamond, or combinations In a specific embodiment, the substrate is glued onto a submount, the submount being characterized by a heat conductivity of at least 200 W/(mk). The substrate comprises one or more cladding regions. The one or more optical members comprise a fast-axis collimation lens. The laser device is characterized by a spectral width of at least 4 nm. In a specific example, the number N of emitters can range between 3 and 15, 15 and 30, 30 and 50, and can be greater than 50. In other examples, each of the N emitters produces an average output power of 25 to 50 mW, produces an average output power of 50 to 100 mW, produces an average output power of 100 to 250 mW, produces an average output power of 250 to 500 mW, or produces an average output power of 500 to 1000 mW. In a specific example, each of the N emitters produces an average output power greater than 1 W. In an example, each of the N emitters is separated by 3 μm to 15 μm from one another or separated by 15 μm to 75 μm from one another or separated by 75 μm to 150 μm from one another or separated by 150 μm to 300 μm from one another.
In yet an alternative specific embodiment, the present invention provides an optical device, e.g., laser. The device includes a gallium and nitrogen containing material having a surface region, which is characterized by a semipolar surface orientation within 5 degrees of one of the following (10-11), (10-1-1), (20-21), (20-2-1), (30-31), (30-3-1), (40-41), or (40-4-1). The device also has a first waveguide region configured in a first direction, which is a projection of a c-direction overlying the surface region of the gallium and nitrogen containing material in a specific embodiment. The device also has a second waveguide region coupled to the first waveguide region and is configured in a second direction overlying the surface region of the gallium and nitrogen containing material. In a preferred embodiment, the second direction is different from the first direction and substantially parallel to the a-direction. In a preferred embodiment, the first and second waveguide regions are continuous, are formed as a single continuous waveguide structure, and are formed together during manufacture of the waveguides. Of course, there can be other variations, modifications, and alternatives.
In an example, the apparatus has a support member comprised of a copper material, an aluminum material, a silicon material, or combinations thereof. In an example, a micro-channel cooler thermally is coupled to the support member. In an example, a heat spreader is coupled between the support member and the laser devices.
In an example, a phosphor material is provided within the module apparatus and in particular optically coupled to the laser beams. In an example, the phosphor material optically interacts with the plurality of laser beams. The phosphor material operates in a reflective mode, a transmissive mode, or combinations thereof, and the like. The phosphor material is positioned in the optical path coupled to an optical element or a metal or other material. The phosphor material is thermally coupled to the support member along a continuous thermal gradient toward a selected portion of a heat sink region within a vicinity of the support member. The apparatus also has an optical coupling of the plurality of laser beams to a phosphor material external to the module apparatus. In an example, the plurality of laser beams is guided through an optical fiber to couple to the phosphor material. The output beam is geometrically configured to optimize the interaction with the phosphors such as improving the efficiency of a phosphor conversion process. In an example, a phosphor material coupled with the plurality of laser beams and combiner to cause output of a selected spatial pattern having a maximum width and a minimum width.
In an example, the apparatus has an electrical input interface is configured to couple radio frequency electrical inputs to the plurality of laser devices. The electrical input interface is configured to couple logic signals to the plurality of laser devices.
In an example, the apparatus has a submount member characterized by a coefficient of thermal expansion (CTE) associated with the support member and a heat sink. In an example, a submount member is coupling the N laser devices to the support member. The submount member is made of a material including at least one of aluminum nitride, BeO, diamond, composite diamond, or combinations thereof. The submount members are used to couple the N laser devices to the support member. In a example, a submount is glued to the support member. In an example, the submount is characterized by a heat conductivity of at least 200 W/(mk). In an example, the laser devices are directly thermally coupled directly to the support member. In an example, at least a portion of the N laser devices are configured on either a non-polar or semipolar gallium and nitrogen containing oriented surface region.
In an example, the nonpolar or semipolar oriented surface region is a semipolar orientation characterized by the {20-21} or {20-2-1} plane. A laser stripe region overlies the semipolar surface region; wherein the laser stripe region is oriented in the projection of the c-direction. In an example, the nonpolar or semipolar oriented surface region is a nonpolar orientation characterized by m-plane and a laser stripe region overlies the nonpolar surface region; wherein the laser stripe region is oriented in the c-direction. In an example, the plurality of laser beams are individually optically coupled into a plurality of optical fibers. The plurality of the optical fibers are optically coupled with each other to combine the plurality of laser beams into at least one output beam. The output beam is coupled into an optical fiber. In an example, the output beam is characterized by a wide spectral width of at least 4 nm; wherein N ranges between 3 and 50, and the output beam is characterized by a narrow spectral width of less than 4 nm; wherein N ranges between 3 and 50. In an example, each of the N emitters produces an average output power of 10 to 1000 mW. In an example, each of the N emitters produces an average output power of 1 to 5 W. The optical module apparatus is characterized by an output power of 10 W and greater, 50 W and greater, or 100 W and greater or 200 W and greater or less, although there may be variations. In an example, a thermal impedance of less than 2 degrees Celsius per watt of electrical input power is characterizing the thermal path from the laser device to a heat sink. In an example, a thermal impedance of less than 1 Degrees Celsius per watt of electrical input power is characterizing the thermal path from the laser device to a heat sink. In an example, an optical output power degradation of less than 20% in 2000 hours is provided when the optical module apparatus is operated at a rated output power with a constant input current at a base temperature of 25 degrees Celsius. In an example, an optical output power degradation of less than 20% in 5000 hours is provided when the optical module apparatus is operated at a rated output power with a constant input current at a base temperature of 25 degrees Celsius. Depending upon the embodiment, the height is characterized by less than 7 mm or the height is characterized by less than 4 mm or the height is characterized by less than 2 mm.
In certain embodiments, an optical module apparatus comprises a form factor characterized by a length, a width, and a height; the height characterized by a dimension of less than 11 mm and greater than 1 mm, the apparatus comprising: a support member; a plurality of laser diode devices numbered from 1 through N overlying the support member, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices configured to emit a laser beam characterized by emission selected from blue emission with a wavelength ranging from 415 nm to 485 nm, green emission with a wavelength ranging from 500 nm to 560 nm, and a combination thereof; and wherein N is greater than 1; a free space with a non-guided characteristic capable of transmitting the laser beams from each of the plurality of laser diode devices; and a combiner configured to receive the laser beams from each of the plurality of gallium and nitrogen containing laser diode devices, and to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration, wherein: the support member is configured to transport thermal energy from the plurality of laser diode devices to a heat sink; the combiner comprises free-space optics configured to create one or more free space optical beams; at least one of the laser beams is characterized by a polarization purity of greater than 60% and less than 100%; the output beam is characterized by an operating optical output power of at least 5 W; a thermal path from the plurality of laser diode devices to the heat sink characterized by a thermal impedance of less than 4 degrees Celsius per electrical watt of electrical input power characterizing; and the optical module apparatus is characterized by an optical output power degradation of less than 20% in 500 hours when the optical module apparatus is operated within the optical output power with a constant input current at a base temperature of 25 degrees Celsius.
In certain embodiments of an optical module apparatus, at least some of the plurality of laser diode devices comprise AlInGaP laser diode device configured to emit a laser beam characterized by red emission with a wavelength ranging from 625 nm to 665 nm.
In certain embodiments, an optical module apparatus further comprises an electrical input interface configured to couple electrical input power to each of the plurality of laser diode devices.
In certain embodiments of an optical module apparatus, the output power is from 5 W to 200 W.
In certain embodiments of an optical module apparatus, each of the plurality of laser diode devices is operable in an environment comprising at least 150,000 ppm oxygen gas; wherein each of the plurality of laser diode devices is substantially free from efficiency degradation over a time period from the oxygen gas.
In certain embodiments of an optical module apparatus, the support member comprises a material selected from copper, aluminum, silicon, and a combination of any of the foregoing.
In certain embodiments, an optical module apparatus further comprises a micro-channel cooler thermally coupled to the support member.
In certain embodiments, an optical module apparatus further comprises a heat spreader coupled between the support member and the plurality of laser devices.
In certain embodiments, an optical module apparatus further comprises a phosphor material optically coupled to the output beam.
In certain embodiments of an optical module apparatus, a phosphor material is configured to operate in a mode selected from a reflective mode, a transmissive mode, and a combination of a reflective mode and a transmissive mode.
In certain embodiments of an optical module apparatus, a phosphor material is coupled to an optical element or to a metal.
In certain embodiments of an optical module apparatus, a phosphor material is thermally coupled to the support member along a continuous thermal gradient toward a selected portion of a heat sink region within a vicinity of the support member.
In certain embodiments, an optical module apparatus further comprises an optical coupler configured to optically couple the plurality of laser beams to a phosphor material external to the module apparatus.
In certain embodiments of an optical module apparatus, an optical coupler comprises one or more optical fibers.
In certain embodiments of an optical module apparatus, the output beam is geometrically configured to optimize an interaction with a phosphor material from a first efficiency to a second efficiency.
In certain embodiments, an optical module apparatus further comprises a phosphor material coupled with the laser beams; and wherein the combiner is configured to provide an output beam characterized by a selected spatial pattern having a maximum width and a minimum width.
In certain embodiments of an optical module apparatus, an electrical input interface is configured to couple radio frequency electrical inputs to the plurality of laser diode devices.
In certain embodiments of an optical module apparatus, an electrical input interface is configured to couple logic signals to the plurality of laser diode devices.
In certain embodiments, an optical module apparatus further comprises a submount member characterized by a coefficient of thermal expansion (CTE) coupled to the support member and the heat sink.
In certain embodiments, an optical module apparatus further comprises one or more submount members coupling the plurality of laser diode devices to the support member.
In certain embodiments of an optical module apparatus, the one or more submount member comprises a material selected from aluminum nitride, BeO, diamond, composite diamond, and a combination of any of the foregoing.
In certain embodiments of an optical module apparatus, the one or more submount members is configured to couple the plurality of laser diode devices to the support member.
In certain embodiments, an optical module apparatus further comprises a submount attached to the support member, the submount being characterized by a thermal conductivity of at least 200 W/(mk).
In certain embodiments of an optical module apparatus, the plurality of laser diode devices are directly thermally coupled directly to the support member.
In certain embodiments of an optical module apparatus, at least a portion of the plurality of laser diode devices is overlies an orient surface region selected from a non-polar gallium and nitrogen containing oriented surface region and a semipolar gallium and nitrogen containing oriented surface region.
In certain embodiments of an optical module apparatus, an oriented surface region is a semipolar orientation characterized by the {20-21} or {20-2-1} plane; and a laser stripe region overlies the oriented surface region; wherein the laser stripe region is oriented in the projection of the c-direction.
In certain embodiments of an optical module apparatus, an oriented surface region is a nonpolar orientation characterized by the m-plane; and a laser stripe region overlies the oriented surface region, wherein the laser stripe region is oriented in the c-direction.
In certain embodiments of an optical module apparatus, free space optics comprises a fast-axis collimation lens.
In certain embodiments, an optical module apparatus further comprises an optical fiber, wherein the output beam is coupled into the optical fiber.
In certain embodiments of an optical module apparatus, an output beam is characterized by a spectral width of at least 4 nm; and N ranges from 3 to 50.
In certain embodiments of an optical module apparatus, an output beam is characterized by a spectral width of less than 4 nm; and N ranges from 3 to 50.
In certain embodiments of an optical module apparatus, each of the plurality of laser diode devices emits a laser beam characterized by an average output power from 10 mW to 1000 mW.
In certain embodiments of an optical module apparatus, each of the plurality of laser diode devices emits a laser beam characterized by an average output power from 1 W to 5 W.
In certain embodiments of an optical module apparatus, an output power is selected from 10 W and greater, 50 W and greater, and 100 W and greater.
In certain embodiments of an optical module apparatus, a thermal impedance is less than 2 degrees Celsius per watt of electrical input power.
In certain embodiments of an optical module apparatus, a thermal impedance is less than 1 degrees Celsius per watt of electrical input power.
In certain embodiments of an optical module apparatus, the optical output power degradation is less than 20% in 2,000 hours when the optical module apparatus is operated within the output power with a constant input current at a base temperature of 25 degrees Celsius.
In certain embodiments of an optical module apparatus, the optical output power degradation is less than 20% in 5,000 hours when the optical module apparatus is operated at within the output power with a constant input current at a base temperature of 25 degrees Celsius.
In certain embodiments, an optical module apparatus comprising a form factor characterized by a length, a width, and a height; the height characterized by a dimension of less than 11 mm and greater than 1 mm, the apparatus comprising: a support member; a plurality of laser diode devices numbered from 1 through N overlying the support member, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices configured to emit a laser beam characterized by emission selected from blue emission with a wavelength ranging from 415 nm to 485 nm, green emission with a wavelength ranging from 500 nm to 560 nm, and a combination thereof; and wherein N is greater than 1; a waveguiding member configured to transmit the laser beams from the plurality of laser optical devices; and a combiner configured to receive laser beams from the plurality of laser diode devices; and to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; wherein the support member is configured to transport thermal energy from the plurality of laser diode devices to a heat sink; at least one of the laser beams is characterized by a polarization purity of greater than 60% and less than 100%; the output beam is characterized by an optical output power of at least 5 W; and a thermal path from the laser device to a heat sink is characterized by a thermal impedance of less than 4 degrees Celsius per electrical watt of input power.
In certain embodiments, an optical module apparatus comprising a form factor characterized by a length, a width, and a height; the height characterized by a dimension less than 11 mm and greater than 1 mm, the apparatus comprising: a support member; a plurality of laser diode devices numbered from 1 through N overlying the support member, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprising gallium and nitrogen containing laser diode devices characterized by a nonpolar or semipolar oriented surface region and configured to emit a laser beam characterized by emission selected from blue emission with a wavelength ranging from 415 nm to 485 nm, green emission with a wavelength ranging from 500 nm to 560 nm, and a combination thereof; and wherein N is greater than 1; a laser stripe region overlying the nonpolar or semipolar surface region; wherein each laser stripe region is oriented in a c-direction or a projection of a c-direction and characterized by a first end and a second end; and a combiner configured to receive a plurality of laser beams of N incoming laser beams; the combiner functioning to cause an output beam with a selected wavelength range, spectral width, power, and spatial configuration, where N is greater than 1; wherein the support member is configured to transport thermal energy from the plurality of laser diode devices to a heat sink; at least one of the laser beams is characterized by a polarization purity of greater than 60% and less than 100%; the output beam is characterized by a predetermined rated operating optical output power range of at least 5 W; and a thermal path from the laser device to a heat sink is characterized by a thermal impedance of less than 4 degrees Celsius per electrical watt of input power.
While the above is a full description of the specific embodiments, various modifications, alternative constructions and equivalents may be used. Therefore, the above description and illustrations should not be taken as limiting the scope of the present invention which is defined by the appended claims.
This application is a continuation of U.S. application Ser. No. 14/684,240, filed Apr. 10, 2015, which is a continuation of U.S. application Ser. No. 13/732,233, filed on Dec. 31, 2012 which is a continuation-in-part of U.S. application Ser. No. 13/356,355, filed on Jan. 23, 2012, which claims priority to U.S. Provisional Application 61/435,578 filed on Jan. 24, 2011, each of which are hereby incorporated by reference for all purposes.
| Number | Name | Date | Kind |
|---|---|---|---|
| 4318058 | Mito et al. | Mar 1982 | A |
| 4341592 | Shortes et al. | Jul 1982 | A |
| 4860687 | Frijlink | Aug 1989 | A |
| 4911102 | Manabe et al. | Mar 1990 | A |
| 5331654 | Jewell et al. | Jul 1994 | A |
| 5334277 | Nakamura | Aug 1994 | A |
| 5365534 | Janssen et al. | Nov 1994 | A |
| 5366953 | Char et al. | Nov 1994 | A |
| 5527417 | Lida et al. | Jun 1996 | A |
| 5607899 | Yoshida et al. | Mar 1997 | A |
| 5632812 | Hirabayashi | May 1997 | A |
| 5647945 | Matsuse et al. | Jul 1997 | A |
| 5696389 | Ishikawa et al. | Dec 1997 | A |
| 5821555 | Saito et al. | Oct 1998 | A |
| 5888907 | Tomoyasu et al. | Mar 1999 | A |
| 5926493 | O'Brien et al. | Jul 1999 | A |
| 5951923 | Rorie et al. | Sep 1999 | A |
| 6052399 | Sun | Apr 2000 | A |
| 6069394 | Hashimoto et al. | May 2000 | A |
| 6072197 | Horino et al. | Jun 2000 | A |
| 6147953 | Duncan | Nov 2000 | A |
| 6153010 | Kiyoku et al. | Nov 2000 | A |
| 6195381 | Botez et al. | Feb 2001 | B1 |
| 6239454 | Glew et al. | May 2001 | B1 |
| 6249536 | Farries et al. | Jun 2001 | B1 |
| 6379985 | Cervantes et al. | Apr 2002 | B1 |
| 6451157 | Hubacek | Sep 2002 | B1 |
| 6489636 | Goetz et al. | Dec 2002 | B1 |
| 6586762 | Kozaki | Jul 2003 | B2 |
| 6635904 | Goetz et al. | Oct 2003 | B2 |
| 6639925 | Niwa et al. | Oct 2003 | B2 |
| 6656615 | Dwilinski et al. | Dec 2003 | B2 |
| 6680959 | Tanabe et al. | Jan 2004 | B2 |
| 6728277 | Wilson | Apr 2004 | B1 |
| 6734461 | Shiomi et al. | May 2004 | B1 |
| 6755932 | Masuda et al. | Jun 2004 | B2 |
| 6809781 | Setlur et al. | Oct 2004 | B2 |
| 6814811 | Ose | Nov 2004 | B2 |
| 6833564 | Shen et al. | Dec 2004 | B2 |
| 6858081 | Biwa et al. | Feb 2005 | B2 |
| 6858882 | Tsuda et al. | Feb 2005 | B2 |
| 6920166 | Akasaka et al. | Jul 2005 | B2 |
| 7009199 | Hall | Mar 2006 | B2 |
| 7019325 | Li et al. | Mar 2006 | B2 |
| 7033858 | Chai et al. | Apr 2006 | B2 |
| 7053413 | D'Evelyn et al. | May 2006 | B2 |
| 7063741 | D'Evelyn | Jun 2006 | B2 |
| 7128849 | Setlur et al. | Oct 2006 | B2 |
| 7220324 | Baker et al. | May 2007 | B2 |
| 7303630 | Motoki et al. | Dec 2007 | B2 |
| 7312156 | Granneman et al. | Dec 2007 | B2 |
| 7323723 | Ohtsuka et al. | Jan 2008 | B2 |
| 7338828 | Imer et al. | Mar 2008 | B2 |
| 7358542 | Radkov et al. | Apr 2008 | B2 |
| 7358543 | Chua et al. | Apr 2008 | B2 |
| 7390359 | Miyanaga et al. | Jun 2008 | B2 |
| 7470555 | Matsumura | Dec 2008 | B2 |
| 7483466 | Uchida et al. | Jan 2009 | B2 |
| 7483468 | Tanaka | Jan 2009 | B2 |
| 7489441 | Scheible et al. | Feb 2009 | B2 |
| 7491984 | Koike | Feb 2009 | B2 |
| 7555025 | Yoshida | Jun 2009 | B2 |
| 7598104 | Teng et al. | Oct 2009 | B2 |
| 7691658 | Kaeding et al. | Apr 2010 | B2 |
| 7709284 | Iza et al. | May 2010 | B2 |
| 7727332 | Habel et al. | Jun 2010 | B2 |
| 7733571 | Li | Jun 2010 | B1 |
| 7749326 | Kim et al. | Jul 2010 | B2 |
| 7806078 | Yoshida | Oct 2010 | B2 |
| 7858408 | Mueller et al. | Dec 2010 | B2 |
| 7862761 | Okushima et al. | Jan 2011 | B2 |
| 7923741 | Zhai et al. | Apr 2011 | B1 |
| 7939354 | Kyono et al. | May 2011 | B2 |
| 7968864 | Akita et al. | Jun 2011 | B2 |
| 8017932 | Okamoto et al. | Sep 2011 | B2 |
| 8044412 | Murphy et al. | Oct 2011 | B2 |
| 8124996 | Raring et al. | Feb 2012 | B2 |
| 8126024 | Raring | Feb 2012 | B1 |
| 8143148 | Raring et al. | Mar 2012 | B1 |
| 8242522 | Raring | Aug 2012 | B1 |
| 8247887 | Raring et al. | Aug 2012 | B1 |
| 8252662 | Poblenz et al. | Aug 2012 | B1 |
| 8254425 | Raring | Aug 2012 | B1 |
| 8259769 | Raring et al. | Sep 2012 | B1 |
| 8284810 | Sharma et al. | Oct 2012 | B1 |
| 8294179 | Raring | Oct 2012 | B1 |
| 8314429 | Raring et al. | Nov 2012 | B1 |
| 8350273 | Vielemeyer | Jan 2013 | B2 |
| 8351478 | Raring et al. | Jan 2013 | B2 |
| 8355418 | Raring | Jan 2013 | B2 |
| 8416825 | Raring | Apr 2013 | B1 |
| 8422525 | Raring | Apr 2013 | B1 |
| 8427590 | Raring | Apr 2013 | B2 |
| 8451876 | Raring | May 2013 | B1 |
| 8509275 | Raring et al. | Aug 2013 | B1 |
| 9025635 | Goutain | May 2015 | B2 |
| 9371970 | Goutain | Jun 2016 | B2 |
| 9595813 | Raring et al. | Mar 2017 | B2 |
| 20010048114 | Morita et al. | Dec 2001 | A1 |
| 20020027933 | Tanabe et al. | Mar 2002 | A1 |
| 20020050488 | Nikitin et al. | May 2002 | A1 |
| 20020085603 | Okumura | Jul 2002 | A1 |
| 20020105986 | Yamasaki | Aug 2002 | A1 |
| 20020171092 | Goetz et al. | Nov 2002 | A1 |
| 20030000453 | Unno et al. | Jan 2003 | A1 |
| 20030001238 | Ban | Jan 2003 | A1 |
| 20030012243 | Okumura | Jan 2003 | A1 |
| 20030020087 | Goto et al. | Jan 2003 | A1 |
| 20030039025 | Mugino | Feb 2003 | A1 |
| 20030129810 | Barth | Jul 2003 | A1 |
| 20030140846 | Biwa et al. | Jul 2003 | A1 |
| 20030178617 | Appenzeller et al. | Sep 2003 | A1 |
| 20030200931 | Goodwin | Oct 2003 | A1 |
| 20030216011 | Nakamura et al. | Nov 2003 | A1 |
| 20040025787 | Selbrede et al. | Feb 2004 | A1 |
| 20040027631 | Nagano et al. | Feb 2004 | A1 |
| 20040060518 | Nakamura et al. | Apr 2004 | A1 |
| 20040099213 | Adomaitis et al. | May 2004 | A1 |
| 20040104391 | Maeda et al. | Jun 2004 | A1 |
| 20040146264 | Auner et al. | Jul 2004 | A1 |
| 20040151222 | Sekine | Aug 2004 | A1 |
| 20040170203 | Tojo et al. | Sep 2004 | A1 |
| 20040196877 | Kawakami et al. | Oct 2004 | A1 |
| 20040222357 | King et al. | Nov 2004 | A1 |
| 20040233950 | Furukawa et al. | Nov 2004 | A1 |
| 20040247275 | Vakhshoori et al. | Dec 2004 | A1 |
| 20040262624 | Akita et al. | Dec 2004 | A1 |
| 20050040384 | Tanaka et al. | Feb 2005 | A1 |
| 20050072986 | Sasaoka | Apr 2005 | A1 |
| 20050168564 | Kawaguchi et al. | Aug 2005 | A1 |
| 20050214992 | Chakraborty et al. | Sep 2005 | A1 |
| 20050218413 | Matsumoto et al. | Oct 2005 | A1 |
| 20050224826 | Keuper et al. | Oct 2005 | A1 |
| 20050229855 | Raaijmakers | Oct 2005 | A1 |
| 20050230701 | Huang | Oct 2005 | A1 |
| 20050247260 | Shin et al. | Nov 2005 | A1 |
| 20050285128 | Scherer et al. | Dec 2005 | A1 |
| 20050286591 | Lee | Dec 2005 | A1 |
| 20060018355 | Feitisch et al. | Jan 2006 | A1 |
| 20060029112 | Young et al. | Feb 2006 | A1 |
| 20060030738 | Vanmaele et al. | Feb 2006 | A1 |
| 20060033009 | Kobayashi et al. | Feb 2006 | A1 |
| 20060037529 | D'Evelyn | Feb 2006 | A1 |
| 20060038193 | Wu et al. | Feb 2006 | A1 |
| 20060060131 | Atanackovic | Mar 2006 | A1 |
| 20060066319 | Dallenbach et al. | Mar 2006 | A1 |
| 20060077795 | Kitahara et al. | Apr 2006 | A1 |
| 20060078022 | Kozaki et al. | Apr 2006 | A1 |
| 20060079082 | Bruhns et al. | Apr 2006 | A1 |
| 20060086319 | Kasai et al. | Apr 2006 | A1 |
| 20060118799 | D'Evelyn et al. | Jun 2006 | A1 |
| 20060126688 | Kneissl | Jun 2006 | A1 |
| 20060144334 | Yim et al. | Jul 2006 | A1 |
| 20060175624 | Sharma et al. | Aug 2006 | A1 |
| 20060189098 | Edmond | Aug 2006 | A1 |
| 20060193359 | Kuramoto | Aug 2006 | A1 |
| 20060205199 | Baker et al. | Sep 2006 | A1 |
| 20060213429 | Motoki et al. | Sep 2006 | A1 |
| 20060216416 | Sumakeris et al. | Sep 2006 | A1 |
| 20060256482 | Araki et al. | Nov 2006 | A1 |
| 20060288928 | Eom et al. | Dec 2006 | A1 |
| 20070081857 | Yoon | Apr 2007 | A1 |
| 20070086916 | LeBoeuf et al. | Apr 2007 | A1 |
| 20070093073 | Farrell et al. | Apr 2007 | A1 |
| 20070101932 | Schowalter et al. | May 2007 | A1 |
| 20070110112 | Sugiura | May 2007 | A1 |
| 20070120141 | Moustakas et al. | May 2007 | A1 |
| 20070153866 | Shchegrov et al. | Jul 2007 | A1 |
| 20070163490 | Habel et al. | Jul 2007 | A1 |
| 20070166853 | Guenther et al. | Jul 2007 | A1 |
| 20070184637 | Haskell et al. | Aug 2007 | A1 |
| 20070217462 | Yamasaki | Sep 2007 | A1 |
| 20070242716 | Samal et al. | Oct 2007 | A1 |
| 20070252164 | Zhong et al. | Nov 2007 | A1 |
| 20070259464 | Bour et al. | Nov 2007 | A1 |
| 20070272933 | Kim et al. | Nov 2007 | A1 |
| 20070280320 | Feezell et al. | Dec 2007 | A1 |
| 20080029152 | Milshtein et al. | Feb 2008 | A1 |
| 20080087919 | Tysoe et al. | Apr 2008 | A1 |
| 20080092812 | McDiarmid et al. | Apr 2008 | A1 |
| 20080095492 | Son et al. | Apr 2008 | A1 |
| 20080121916 | Teng et al. | May 2008 | A1 |
| 20080124817 | Bour et al. | May 2008 | A1 |
| 20080149949 | Nakamura et al. | Jun 2008 | A1 |
| 20080149959 | Nakamura et al. | Jun 2008 | A1 |
| 20080164578 | Tanikella et al. | Jul 2008 | A1 |
| 20080173735 | Mitrovic et al. | Jul 2008 | A1 |
| 20080191192 | Feezle et al. | Aug 2008 | A1 |
| 20080191223 | Nakamura et al. | Aug 2008 | A1 |
| 20080198881 | Farrell et al. | Aug 2008 | A1 |
| 20080210958 | Senda et al. | Sep 2008 | A1 |
| 20080217745 | Miyanaga et al. | Sep 2008 | A1 |
| 20080232416 | Okamoto et al. | Sep 2008 | A1 |
| 20080251020 | Franken et al. | Oct 2008 | A1 |
| 20080283851 | Akita | Nov 2008 | A1 |
| 20080285609 | Ohta et al. | Nov 2008 | A1 |
| 20080291961 | Kamikawa et al. | Nov 2008 | A1 |
| 20080298409 | Yamashita et al. | Dec 2008 | A1 |
| 20080303033 | Brandes | Dec 2008 | A1 |
| 20080308815 | Kasai et al. | Dec 2008 | A1 |
| 20080315179 | Kim et al. | Dec 2008 | A1 |
| 20090021723 | De Lega | Jan 2009 | A1 |
| 20090058532 | Kikkawa et al. | Mar 2009 | A1 |
| 20090061857 | Kazmi | Mar 2009 | A1 |
| 20090066241 | Yokoyama | Mar 2009 | A1 |
| 20090078944 | Kubota et al. | Mar 2009 | A1 |
| 20090080857 | St. John-Larkin | Mar 2009 | A1 |
| 20090081857 | Hanser et al. | Mar 2009 | A1 |
| 20090081867 | Taguchi et al. | Mar 2009 | A1 |
| 20090141765 | Kohda et al. | Jun 2009 | A1 |
| 20090153752 | Silverstein | Jun 2009 | A1 |
| 20090159869 | Ponce et al. | Jun 2009 | A1 |
| 20090229519 | Saitoh | Sep 2009 | A1 |
| 20090250686 | Sato et al. | Oct 2009 | A1 |
| 20090267100 | Miyake et al. | Oct 2009 | A1 |
| 20090273005 | Lin | Nov 2009 | A1 |
| 20090301387 | D'Evelyn | Dec 2009 | A1 |
| 20090301388 | D'Evelyn | Dec 2009 | A1 |
| 20090309110 | Raring et al. | Dec 2009 | A1 |
| 20090309127 | Raring et al. | Dec 2009 | A1 |
| 20090310640 | Sato et al. | Dec 2009 | A1 |
| 20090316116 | Melville et al. | Dec 2009 | A1 |
| 20090320744 | D'Evelyn | Dec 2009 | A1 |
| 20090321778 | Chen et al. | Dec 2009 | A1 |
| 20100001300 | Raring et al. | Jan 2010 | A1 |
| 20100003492 | D'Evelyn | Jan 2010 | A1 |
| 20100006546 | Young et al. | Jan 2010 | A1 |
| 20100006873 | Raring et al. | Jan 2010 | A1 |
| 20100025656 | Raring et al. | Feb 2010 | A1 |
| 20100031875 | D'Evelyn | Feb 2010 | A1 |
| 20100044718 | Hanser et al. | Feb 2010 | A1 |
| 20100096615 | Okamoto et al. | Apr 2010 | A1 |
| 20100104495 | Kawabata et al. | Apr 2010 | A1 |
| 20100140630 | Hamaguchi et al. | Jun 2010 | A1 |
| 20100140745 | Khan et al. | Jun 2010 | A1 |
| 20100151194 | D'Evelyn | Jun 2010 | A1 |
| 20100195687 | Okamoto et al. | Aug 2010 | A1 |
| 20100220262 | DeMille et al. | Sep 2010 | A1 |
| 20100276663 | Enya et al. | Nov 2010 | A1 |
| 20100295054 | Okamoto et al. | Nov 2010 | A1 |
| 20100302464 | Raring et al. | Dec 2010 | A1 |
| 20100309943 | Chakraborty et al. | Dec 2010 | A1 |
| 20100316075 | Raring et al. | Dec 2010 | A1 |
| 20100327291 | Preble et al. | Dec 2010 | A1 |
| 20110031508 | Hamaguchi et al. | Feb 2011 | A1 |
| 20110056429 | Raring et al. | Mar 2011 | A1 |
| 20110057167 | Ueno et al. | Mar 2011 | A1 |
| 20110064100 | Raring et al. | Mar 2011 | A1 |
| 20110064101 | Raring et al. | Mar 2011 | A1 |
| 20110064102 | Raring et al. | Mar 2011 | A1 |
| 20110073888 | Ueno et al. | Mar 2011 | A1 |
| 20110075694 | Yoshizumi et al. | Mar 2011 | A1 |
| 20110100291 | D'Evelyn | May 2011 | A1 |
| 20110103418 | Hardy et al. | May 2011 | A1 |
| 20110129669 | Fujito et al. | Jun 2011 | A1 |
| 20110150020 | Haase et al. | Jun 2011 | A1 |
| 20110164637 | Yoshizumi et al. | Jul 2011 | A1 |
| 20110180781 | Raring et al. | Jul 2011 | A1 |
| 20110182056 | Trottier et al. | Jul 2011 | A1 |
| 20110183498 | D'Evelyn | Jul 2011 | A1 |
| 20110186874 | Shum | Aug 2011 | A1 |
| 20110186887 | Trottier et al. | Aug 2011 | A1 |
| 20110188530 | Lell | Aug 2011 | A1 |
| 20110216795 | Hsu et al. | Sep 2011 | A1 |
| 20110247556 | Raring et al. | Oct 2011 | A1 |
| 20110281422 | Wang et al. | Nov 2011 | A1 |
| 20110286484 | Raring et al. | Nov 2011 | A1 |
| 20120051377 | Liang | Mar 2012 | A1 |
| 20120104359 | Felker et al. | May 2012 | A1 |
| 20120178198 | Raring et al. | Jul 2012 | A1 |
| 20120187371 | Raring et al. | Jul 2012 | A1 |
| 20120314398 | Raring et al. | Dec 2012 | A1 |
| 20130016750 | Raring et al. | Jan 2013 | A1 |
| 20130022064 | Raring et al. | Jan 2013 | A1 |
| 20130044782 | Raring | Feb 2013 | A1 |
| 20130064261 | Sharma et al. | Mar 2013 | A1 |
| 20140086539 | Goutain et al. | Mar 2014 | A1 |
| 20150211724 | Goutain et al. | Jul 2015 | A1 |
| 20160265729 | Goutain et al. | Sep 2016 | A1 |
| Number | Date | Country |
|---|---|---|
| 101009347 | Mar 1987 | CN |
| 1538534 | Oct 2004 | CN |
| 1702836 | Nov 2005 | CN |
| 101079463 | Nov 2007 | CN |
| 101099245 | Jan 2008 | CN |
| 10171692 | Apr 2008 | CN |
| 203967503 | Nov 2014 | CN |
| 03287770 | Dec 1991 | JP |
| 07-162081 | Jun 1995 | JP |
| 2002-009402 | Jan 2002 | JP |
| 2002-185082 | Jun 2002 | JP |
| 2004-503923 | Feb 2004 | JP |
| 2004-152841 | May 2004 | JP |
| 2004-186527 | Jul 2004 | JP |
| 2006-091285 | Apr 2006 | JP |
| 2006-120923 | May 2006 | JP |
| 2007-173467 | Jul 2007 | JP |
| 2007-529910 | Oct 2007 | JP |
| 2007-068398 | Apr 2008 | JP |
| 2008-311640 | Dec 2008 | JP |
| 2009-021506 | Jan 2009 | JP |
| 2009-158893 | Jul 2009 | JP |
| 2009-170708 | Jul 2009 | JP |
| 2008-041521 | Apr 2008 | WO |
| 2010120819 | Oct 2010 | WO |
| Entry |
|---|
| U.S. Appl. No. 14/684,240, Notice of Allowance dated Feb. 22, 2016, 11 pages. |
| U.S. Appl. No. 13/356,355, Non-Final Office Action dated Jul. 21, 2016, 13 pages. |
| Abare “Cleaved and Etched Facet Nitride Laser Diodes,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, pp. 505-509 (May 1998). |
| Adesida et al., “Characteristics of chemically assisted ion beam etching of gallium nitride” Appl. Phys. Lett. 65 (7) (Aug. 1994), pp. 889-891. |
| Aoki et al., “InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD, 1993,” IEEE J Quantum Electronics, vol. 29, pp. 2088-2096. |
| Asano et al., “100-mW kink-Free Blue-Violet Laser Diodes with Low Aspect Ratio,” 2003, IEEE Journal of Quantum Electronics, vol. 39, No. 1, pp. 135-140. |
| Asif Khan “Cleaved cavity optically pumped InGaN—GaN laser grown on spinel substrates,” Appl. Phys. Lett. 69 (16), pp. 2418-2420 (Oct. 14, 1996). |
| Behfar et al., “Progress in etched Facet Technology for GaN and Blue Lasers” Proc. of SPIE vol. 6473 (2007), 8 pages. |
| Bernardini et al., “Spontaneous Polarization and Piezoelectric Constants of III-V Nitrides,” 1997, Physical Review B, vol. 56, No. 16, pp. 10024-10027. |
| Caneau et al., “Studies on Selective OMVPE of (Ga,In)/(As,P),” 1992, Journal of Crystal Growth, vol. 124, pp. 243-248. |
| Chen et al., “Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures,” 2007, Advanced Materials, vol. 19, pp. 1707-1710. |
| D'Evelyn et al., “Bulk GaN Crystal Growth by the High-Pressure Ammonothermal Method,” Journal of Crystal Growth, 2007, vol. 300, pp. 11-16. |
| Fujii et al., “Increase in the Extraction Efficiency of GaN-based Light-Emitting Diodes Via Surface Roughening,” 2004, Applied Physics Letters, vol. 84, No. 6, pp. 855-857. |
| Funato et al., “Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar (1122) GaN Substrates,” 2006, Journal of Japanese Applied Physics, vol. 45, No. 26, pp. L659-L662. |
| Funato et al., “Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting,” 2008, Applied Physics Express, vol. 1, pp. 011106-1-011106-3. |
| Founta et al., ‘Anisotropic Morphology of Nonpolar a-Plane GaN Quantum Dots and Quantum Wells,’ Journal of Applied Physics, vol. 102, vol. 7, 2007, pp. 074304-1-074304-6. |
| Gardner et al. “Blue-emitting InGaN—GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2”, Applied Physics Letters 91, 243506 (2007). |
| hap ://techon.nikkeibp. co jp/english/NEWS—EN/20080122/146009. |
| Hiramatsu et al., Selective Area Growth and Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy and Hydride Vapor Phase Epitaxy. Materials Science and Engineering B, vol. 59, May 6, 1999. pp. 104-111. |
| Iso et al., “High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate,” 2007, Japanese Journal of Applied Physics, vol. 46, No. 40, pp. L960-L962. |
| Kendall et al., “Energy Savings Potential of Solid State Lighting in General Lighting Applications,” 2001, Report for the Department of Energy, pp. 1-35. |
| Kim et al, “Improved Electroluminescence on Nonpolar m-plane InGaN/GaN Qantum Well LEDs”, 2007, Physica Status Solidi (RRL), vol. 1, No. 3, pp. 125-127. |
| Kuramoto et al., “Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates,” 2007, Journal of Japanese Applied Physics, vol. 40, pp. 925-927. |
| Lin et al. “Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells,” Japanese Journal of Applied Physics, vol. 43, No. 10, pp. 7032-7035 (2004). |
| Masui et al. “Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature,” Jpn. J. Appl. Phys. 46 pp. 7309-7310 (2007). |
| Michiue et al. “Recent development of nitride LEDs and LDs,” Proceedings of SPIE, vol. 7216, 72161Z (2009). |
| Nakamura et al., “InGaN/Gan/AlGaN-based Laser Diodes with Modulation-doped Strained-layer Superlattices Grown on an Epitaxially Laterally Grown GaN Substrate”, 1998, Applied Physics Letters, vol. 72, No. 12, pp. 211-213. |
| Nam et al., “Later Epitaxial Overgrowth of GaN films on SiO2 Areas Via Metalorganic Vapor Phase Epitaxy,” 1998, Journal of Electronic Materials, vol. 27, No. 4, pp. 233-237. |
| Okamoto et al., “Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers,” 2007, Journal of Japanese Applied Physics, vol. 46, No. 35, pp. 820-822. |
| Okamoto et al., “Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes” The Japan Society of I Applied Physics JJAP Express Letter, vol. 46, No. 9, 2007 pp. L 187 -L 189. |
| Okamoto et al. in “High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” The Japan Society of Applied Physics, Applied Physics Express 1 (Jun. 2008). |
| Park, “Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells,” Journal of Applied Physics vol. 91, No. 12, pp. 9904-9908 (Jun. 2002). |
| Purvis, “Changing the Crystal Face of Gallium Nitride.” The Advance Semiconductor Magazine, vol. 18, No. 8, Nov. 2005. |
| Romanov “Strain-induced polarization in wurtzite III-nitride semipolar layers,” Journal of Applied Physics 100, pp. 023522-1 through 023522-10 (Jul. 25, 2006). |
| Sato et al., “High Power and High Efficiency Green Light Emitting Diode on free-Standing Semipolar (1122) Bulk GaN Substrate,” 2007.Physica Status Solidi (RRL), vol. 1, pp. 162-164. |
| Sato et al., “Optical Properties of Yellow Light-Emitting-Diodes Grown on Semipolar (1122) Bulk GaN Substrate,” 2008, Applied Physics Letter, vol. 92, No. 22, pp. 221110-1-221110-3. |
| Schmidt et al., “Demonstration of Nonpolar m-plane InGaN/GaN Laser Diodes,” 2007, Journal of Japanese Applied Physics, vol. 46, No. 9, pp. 190-191. |
| Schmidt et al., “High Power and High External Efficiency m-plane InGaN Light Emitting Diodes,” 2007, Japanese Journal of Applied Physics, vol. 46, No. 7, pp. L126-L128. |
| Schoedl “Facet degradation of GaN heterostructure laser diodes,” Journal of Applied Physics vol. 97, issue 12, pp. 123102-1 to 123102-8 (2005). |
| Shchekin et al., “High Performance Thin-film Flip-Chip InGaN—GaN Light-emitting Diodes,” 2006, Applied Physics Letters, vol. 89, pp. 071109-071109-3. |
| Shen et al. “Auger recombination in InGaN measured by photoluminescence,” Applied Physics Letters, 91, 141101 (2007). |
| Sizov et al., “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” 2009, Applied Physics Express, vol. 2, pp. 071001-1-071001-3. |
| Tomiya et al. Dislocation related issues in the degradation of GaN-based laser diodes, IEEE Journal of Selected Topics in Quantum Electronics vol. 10, No. 6 (2004). |
| Tyagi et al., “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates,” 2007, Japanese Journal of Applied Physics, vol. 46, No. 7, pp. L129-L131. |
| Tyagi et al., “Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates” Japanese Journal of Applied Physics, vol. 46, No. 19, 2007, pp. L444-L445. |
| Uchida et al.,“Recent Progress in High-Power Blue-violet Lasers,” 2003, IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, No. 5, pp. 1252-1259. |
| Waltereit et al., “Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-emitting Diodes,” 2000, Nature: International Weekly Journal of Science, vol. 406, pp. 865-868. |
| Wierer et al., “High-power AlGaInN Flip-chip Light-emitting Diodes,” 2001, Applied Physics Letters, vol. 78, No. 22, pp. 3379-3381. |
| Yamaguchi, A. Atsushi, “Anisotropic Optical Matrix Elements in Strained GaN-quantum Wells with Various Substrate Orientations,” 2008, Physica Status Solidi (PSS), vol. 5, No. 6, pp. 2329-2332. |
| Yoshizumi et al. “Continuous-Wave operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20-21} GaN Substrates,” Applied Physics Express 2 (2009). |
| Yu et al., “Multiple Wavelength Emission from Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD,” in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2007), paper JTuA92. |
| Zhong et al., “Demonstration of High Power Blue-Green Light Emitting Diode on Semipolar (1122) Bulk GaN Substrate,” 2007, Electron Letter, vol. 43, No. 15, pp. 825-826. |
| Zhong et al., “High Power and High Efficiency Blue Light Emitting Diode on Freestanding Semipolar (1122) Bulk GaN Substrate,” 2007, Applied Physics Letter, vol. 90, No. 23, pp. 233504-233504-3. |
| International Search Report of PCT Application No. PCT/US2009/047107, dated Sep. 29, 2009, 4 pages. |
| International Search Report of PCT Application No. PCT/US2009/046786, dated May 13, 2010, 2 pages. |
| International Search Report of PCT Application No. PCT/US2009/52611, dated Sep. 29, 2009, 3 pages. |
| International Search Report & Written Opinion of PCT Application No. PCT/US2010/030939, dated Jun. 16, 2010, 9 pages. |
| International Search Report & Written Opinion of PCT Application No. PCT/US2010/049172, dated Nov. 17, 2010, 7 pages. |
| International Search Report of PCT Application No. PCT/US2011/037792, dated Sep. 8, 2011, 2 pages. |
| International Search Report & Written Opinion of PCT Application No. PCT/US2011/060030, dated Mar. 21, 2012, 11 pages. |
| Non-Final Office Action dated Nov. 20, 2013 for U.S. Appl. No. 13/356,355, 15 pages. |
| Final Office Action dated Jun. 13, 2014 for U.S. Appl. No. 13/356,355, 21 pages. |
| Non-Final Office Action dated Jul. 14, 2014 for U.S. Appl. No. 13/732,233 36 pages. |
| Non-Final Office Action dated Dec. 18, 2014 for U.S. Appl. No. 13/356,355, 23 pages. |
| Notice of Allowance dated Jan. 9, 2015 for U.S. Appl. No. 13/732,233, 9 pages. |
| Final Office Action dated Jul. 10, 2015 for U.S. Appl. No. 13/356,355, 24 pages. |
| Advisory Action dated Nov. 12, 2015 for U.S. Appl. No. 13/356,355, 24 pages. |
| Non-Final Office Action dated Oct. 21, 2015 for U.S. Appl. No. 14/684,240, 25 pages. |
| U.S. Appl. No. 12/481,543, Non-Final Office Action dated Jun. 27, 2011, 10 pages. |
| U.S. Appl. No. 12/482,440, Final Office Action dated Aug. 12, 2011, 7 pages. |
| U.S. Appl. No. 12/482,440, Non-Final Office Action dated Feb. 23, 2011, 6 pages. |
| U.S. Appl. No. 12/484,924, Final Office Action dated Oct. 31, 2011, 11 pages. |
| U.S. Appl. No. 12/484,924, Non-Final Office Action dated Apr. 14, 2011, 12 pages. |
| U.S. Appl. No. 12/491,169, Final Office Action dated May 11, 2011, 10 pages. |
| U.S. Appl. No. 12/491,169, Non-Final Office Action dated Oct. 22, 2010, 10 pages. |
| U.S. Appl. No. 12/497,289, Non-Final Office Action dated Feb. 2, 2012, 7 pages. |
| U.S. Appl. No. 12/497,289, Notice of Allowance dated May 22, 2012, 7 pages. |
| U.S. Appl. No. 12/502,058, Final Office Action dated Aug. 19, 2011, 13 pages. |
| U.S. Appl. No. 12/502,058, Non-Final Office Action dated Dec. 8, 2010, 15 pages. |
| U.S. Appl. No. 12/502,058, Notice of Allowance dated Apr. 16, 2012, 10 pages. |
| U.S. Appl. No. 12/502,058, Notice of Allowance dated Jul. 19, 2012, 13 pages. |
| U.S. Appl. No. 12/534,829, Non-Final Office Action dated Apr. 19, 2011, 9 pages. |
| U.S. Appl. No. 12/534,829, Notice of Allowance dated Dec. 5, 2011, 10 pages. |
| U.S. Appl. No. 12/534,829, Notice of Allowance dated Oct. 28, 2011, 10 pages. |
| U.S. Appl. No. 12/534,829, Notice of Allowance dated Dec. 21, 2011, 4 pages. |
| U.S. Appl. No. 12/534,838, Final Office Action dated Jan. 13, 2012, 12 pages. |
| U.S. Appl. No. 12/534,838, Non-Final Office Action dated May 3, 2011, 12 pages. |
| U.S. Appl. No. 12/534,838, Non-Final Office Action dated Mar. 20, 2012, 13 pages. |
| U.S. Appl. No. 12/534,838, Notice of Allowance dated Jun. 8, 2012, 8 pages. |
| U.S. Appl. No. 12/573,820, Final Office Action dated Oct. 11, 2011, 23 pages. |
| U.S. Appl. No. 12/573,820, Non-Final Office Action dated Mar. 2, 2011, 19 pages. |
| U.S. Appl. No. 12/749,466, Final Office Action dated Feb. 3, 2012, 16 pages. |
| U.S. Appl. No. 12/749,466, Non-Final Office Action dated Jul. 3, 2012, 18 pages. |
| U.S. Appl. No. 12/749,466, Non-Final Office Action dated Jun. 29, 2011, 20 pages. |
| U.S. Appl. No. 12/749,466, Notice of Allowance dated Jan. 2, 2013, 8 pages. |
| U.S. Appl. No. 12/749,476, Final Office Action dated Nov. 8, 2011, 11 pages. |
| U.S. Appl. No. 12/749,476, Non-Final Office Action dated Apr. 11, 2011, 15 pages. |
| U.S. Appl. No. 12/749,476, Notice of Allowance dated May 4, 2012, 13 pages. |
| U.S. Appl. No. 12/749,476, Notice of Allowance dated Jun. 26, 2012, 8 pages. |
| U.S. Appl. No. 12/759,273, Final Office Action dated Jun. 26, 2012, 16 pages. |
| U.S. Appl. No. 12/759,273, Non-Final Office Action dated Nov. 21, 2011, 10 pages. |
| U.S. Appl. No. 12/762,269, Non-Final Office Action dated Oct. 12, 2011, 12 pages. |
| U.S. Appl. No. 12/762,269, Notice of Allowance dated Apr. 23, 2012, 8 pages. |
| U.S. Appl. No. 12/762,271, Final Office Action dated Jun. 6, 2012, 13 pages. |
| U.S. Appl. No. 12/762,271, Non-Final Office Action dated Dec. 23, 2011, 12 pages. |
| U.S. Appl. No. 12/762,271, Notice of Allowance dated Aug. 8, 2012, 9 pages. |
| U.S. Appl. No. 12/762,278, Notice of Allowance dated Nov. 7, 2011, 11 pages. |
| U.S. Appl. No. 12/778,718, Non-Final Office Action dated Nov. 25, 2011, 12 pages. |
| U.S. Appl. No. 12/778,718, Notice of Allowance dated Apr. 3, 2012, 14 pages. |
| U.S. Appl. No. 12/778,718, Notice of Allowance dated Jun. 13, 2012, 7 pages. |
| U.S. Appl. No. 12/787,343, Non-Final Office Action dated Dec. 17, 2012, 6 pages. |
| U.S. Appl. No. 12/787,343, Notice of Allowance dated Jun. 10, 2013, 9 pages. |
| U.S. Appl. No. 12/789,303, Non-Final Office Action dated Sep. 24, 2012, 38 pages. |
| U.S. Appl. No. 12/789,303, Notice of Allowance dated Dec. 21, 2012, 7 pages. |
| U.S. Appl. No. 12/859,153, Non-Final Office Action dated Sep. 25, 2012, 41 pages. |
| U.S. Appl. No. 12/859,153, Final Office Action dated Feb. 26, 2013, 24 pages. |
| U.S. Appl. No. 12/868,441, Final Office Action dated Dec. 18, 2012, 34 pages. |
| U.S. Appl. No. 12/868,441, Non-Final Office Action dated Apr. 30, 2012, 12 pages. |
| U.S. Appl. No. 12/880,803, Non-Final Office Action dated Feb. 22, 2012, 9 pages. |
| U.S. Appl. No. 12/880,803, Notice of Allowance dated Jul. 18, 2012, 5 pages. |
| U.S. Appl. No. 12/883,093, Final Office Action dated Aug. 3, 2012, 13 pages. |
| U.S. Appl. No. 12/883,093, Non-Final Office Action dated Mar. 13, 2012, 12 pages. |
| U.S. Appl. No. 12/883,093, Notice of Allowance dated Nov. 21, 2012, 12 pages. |
| U.S. Appl. No. 12/883,652, Non-Final Office Action dated Apr. 17, 2012, 8 pages. |
| U.S. Appl. No. 12/884,993, Final Office Action dated Aug. 2, 2012, 15 pages. |
| U.S. Appl. No. 12/884,993, Non-Final Office Action dated Mar. 16, 2012, 15 pages. |
| U.S. Appl. No. 12/884,993, Notice of Allowance dated Nov. 26, 2012, 11 pages. |
| U.S. Appl. No. 12/942,817, Non-Final Office Action dated Feb. 20, 2013, 12 pages. |
| U.S. Appl. No. 12/995,946, Non-Final Office Action dated Jan. 29, 2013, 25 pages. |
| U.S. Appl. No. 12/995,946, Non-Final Office Action dated Mar. 28, 2012, 26 pages. |
| U.S. Appl. No. 13/014,622, Final Office Action dated Apr. 30, 2012, 14 pages. |
| U.S. Appl. No. 13/014,622, Non-Final Office Action dated Nov. 28, 2011, 14 pages. |
| U.S. Appl. No. 13/046,565, Final Office Action dated Feb. 2, 2012, 17 pages. |
| U.S. Appl. No. 13/046,565, Final Office Action dated Jul. 19, 2012, 41 pages. |
| U.S. Appl. No. 13/046,565, Non-Final Office Action dated Nov. 7, 2011, 17 pages. |
| U.S. Appl. No. 13/046,565, Non-Final Office Action dated Apr. 13, 2012, 40 pages. |
| U.S. Appl. No. 13/108,645, Notice of Allowance dated Jan. 28, 2013, 9 pages. |
| U.S. Appl. No. 13/114,806, Non-Final Office Action dated Apr. 12, 2013, 22 pages. |
| U.S. Appl. No. 13/291,922, Final Office Action dated Jun. 18, 2013, 9 pages. |
| U.S. Appl. No. 13/291,922, Non-Final Office Action dated Feb. 20, 2013, 10 pages. |
| U.S. Appl. No. 13/354,639, Non-Final Office Action dated Nov. 7, 2012, 12 pages. |
| U.S. Appl. No. 13/354,639, Notice of Allowance dated Dec. 14, 2012, 8 pages. |
| U.S. Appl. No. 13/356,355, Notice of Allowance dated Oct. 31, 2016, 7 pages. |
| U.S. Appl. No. 13/425,354, Non-Final Office Action dated Feb. 14, 2013, 13 pages. |
| U.S. Appl. No. 13/548,312, Final Office Action dated Mar. 13, 2014, 5 pages. |
| U.S. Appl. No. 13/548,635, Non-Final Office Action dated Jun. 14, 2013, 6 pages. |
| U.S. Appl. No. 13/606,894, Non-Final Office Action dated Feb. 5, 2013, 8 pages. |
| U.S. Appl. No. 13/606,894, Notice of Allowance dated May 24, 2013, 9 pages. |
| U.S. Appl. No. 13/732,233, Notice of Allowability dated Mar. 26, 2015, 4 pages. |
| U.S. Appl. No. 13/853,694, Notice of Allowance dated Sep. 3, 2013, 8 pages. |
| U.S. Appl. No. 14/225,883, Notice of Allowance dated Dec. 10, 2015, 7 pages. |
| U.S. Appl. No. 14/743,878, Non-Final Office Action dated Feb. 2, 2017, 33 pages. |
| U.S. Appl. No. 15/159,595, First Action Interview Pilot Program Pre-Interview Communication dated Mar. 23, 2017, 28 pages. |
| Chinese Application No. 200980134723.8, Office Action dated Nov. 1, 2012, 22 pages (translation only). |
| Chinese Application No. 201320891549.5, Office Action dated May 5, 2014, 2 pages. |
| Franssila, Tools for CVD and Epitaxy, Introduction to Microfabrication, 2004, pp. 329-336. |
| Japanese Application No. 2012-011589, Office Action dated Jul. 11, 2013, 15 pages (7 pages for the original document and 8 pages for the English translation). |
| International Application No. PCT/US2011/037792, International Preliminary Report on Patentability dated Sep. 8, 2011, 13 pages. |
| Number | Date | Country | |
|---|---|---|---|
| 20150285446 A1 | Oct 2015 | US |
| Number | Date | Country | |
|---|---|---|---|
| 61435578 | Jan 2011 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 14684240 | Apr 2015 | US |
| Child | 14743878 | US | |
| Parent | 13732233 | Dec 2012 | US |
| Child | 14684240 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 13356355 | Jan 2012 | US |
| Child | 13732233 | US |
