Patent Application
20100084386
1. Field of the Invention
The present invention relates to a laser processing machine that emits a laser beam to a workpiece such as a semiconductor wafer to form a groove, a slit, etc.
2. Description of the Related Art
In the semiconductor device chip production process, a large number of rectangular chip areas are sectioned by predetermined dividing lines arranged in a lattice pattern on the front surface of a generally disklike semiconductor wafer. An electronic circuit such as an IC or LSI is formed in each of the chip areas. Thereafter, necessary processing such as rear surface grinding is performed on the wafer, which is then cut and divided, i.e., diced, along the predetermined dividing lines. Thus, the chip areas are obtained as semiconductor chips. The semiconductor chips thus obtained are packaged by resin sealing and are widely used in various electric or electronic devices such as mobile phones, personal computers, etc.
Means for dicing a wafer into individual semiconductor chips is generally blade dicing in which a thin disklike blade rotated at a high-speed is incised into the wafer. On the other hand, in recent years, laser dicing has been developed and employed in which a wafer is diced by irradiating the wafer with a laser beam capable of passing through the wafer along predetermined dividing lines. (See Japanese Patent Laid-open No. Hei 10-305420.) In the laser dicing, a technology is proposed in which the shape of an image of a laser beam focused on a workpiece is deformed into a desired shape by a mask to adjust a processing line. (See Japanese Patent Laid-open No. Hei 2005-209719.)
As described in Japanese Patent Laid-open No. Hei 2005-209719, the technology of allowing a laser beam to pass though an aperture formed in a mask involves conceivable application in which the width of the image is changed to make it possible to adjust the width of a processing line such as a groove, a slit or the like to be formed, as well as deforming the shape of the image of the laser beam focused on the workpiece. However, this needs work in which a plurality of masks different from each other in the width of the aperture are prepared and the mask is selectively replaced according to the width of the processing line. Thus, complication and a cost rise are concerned as defects.
Accordingly, it is an object of the present invention to provide a laser processing machine that can easily adjust the width of an image of a laser beam focused on a workpiece, i.e., the width of a processing line, without the necessity of replacement of a mask, and consequently to streamline work and to suppress a cost rise.
In accordance with an aspect of the present invention, there is provided a laser processing machine including: holding means for holding a workpiece; and laser processing means including an oscillator adapted to emit a laser beam to a workpiece held by the holding means and an optical system adapted to direct the laser beam to the workpiece and focus the laser beam onto a desired position of the workpiece; wherein the optical system of the laser processing means includes a mask having a transmitting portion adapted to transmit the laser beam therethrough and shielding part of an irradiation area of the laser beam by allowing the laser beam to pass through the transmitting portion, and mask shifting means for shifting the mask in a direction generally perpendicular to an optical path of the laser beam to vary a shielding area of the laser beam passing through the transmitting portion to vary a width of an image of the laser beam focused on the workpiece.
According to the present invention, the laser beam emitted from the oscillator passes through the transmitting portion of the mask, and is directed to and focused on the workpiece held by the holding means. The width of the image of the laser beam focused on the workpiece corresponds to the width of the transmitting portion. By allowing the mask shifting means to shift the mask, the width of the image, i.e., the width of the processing line is varied. Thus, such simple operation as to allow the mask shifting means to shift the mask can easily adjust the width of the processing line processed by the laser beam into a desired width.
An embodiment of varying the width of the image of the laser beam focused on the workpiece involves an embodiment in which the transmitting portion of the mask is formed in such a taper as to vary its width as it goes toward the shifting direction of the mask.
Incidentally, the workpiece referred to in the present invention is not particularly restrictive; however, examples of the workpiece include a semiconductor wafer such as a silicon wafer; an adhesive member such as a die attach film (DAF) provided on the rear surface of a wafer for chip-mounting; a package for semiconductor product; ceramic, glass-based, silicon-based substrates, various drivers such as LCD drivers for controllably driving various electronic parts or liquid crystal display devices; and various processing materials requiring micron-order accuracy.
The present invention can easily vary the width of the image of the laser beam focused on the workpiece, i.e., the width of the processing line, without the necessity of replacement of the mask. Thus, the invention provides an effect of streamlining work and suppressing a rise in cost.
The above and other objects, features and advantages of the present invention and the manner of realizing them will become more apparent, and the invention itself will best be understood from a study of the following description and appended claims with reference to the attached drawings showing some preferred embodiments of the invention.
An embodiment of the present invention will hereinafter be described with reference to the drawings.
Reference numeral 1 in
Cutting along the predetermined dividing lines 2 is performed by full-cut by means of a blade after the formation of grooves by laser beam irradiation or by full-cut only by laser beam irradiation. Either way, the predetermined dividing lines 2 are irradiated with a laser beam for laser processing. The laser processing in this case is the groove formation or the full-cut mentioned above, which is preferably performed by a laser processing machine 10 according to the embodiment illustrated in
When supplied to the laser processing machine 10, the wafer 1 is held on the inside of an annular frame 4 via an adhesive tape 5 as illustrated in
In the laser processing machine 10 of the present embodiment, the wafer 1 is horizontally set on a disklike chuck table (holding means) 41 with the front surface of the wafer 1 facing upward. A laser beam is directed to the predetermined dividing lines 2 from a laser head 52 of laser processing means 50. As illustrated in
The X-Y traveling table 12 is configured by combining an X-axis base 20 installed on the base 11 so as to be movable in the X-direction with a Y-axis base 30 installed on the X-axis base 20 so as to be movable in the Y-direction. The X-axis base 20 is slidably mounted to a pair of parallel guide rails 21 secured to the base 11 to extend in the X-direction. In addition, the X-axis base 20 is moved in the X-direction by an X-axis drive mechanism 24 where a ball screw 23 is operated by a motor 22. On the other hand, the Y-axis base 30 is slidably mounted to a pair of horizontal guide rails 31 secured onto the X-axis base 20 so as to extend in the Y-direction. In addition, the Y-axis base 30 is moved in the Y-direction by a Y-axis drive mechanism 34 where a ball screw 33 is operated by a motor 32.
A cylindrical chuck base 40 is secured to the upper surface of the Y-axis base 30. The chuck table 41 is supported on the chuck base 40 so as to be turnable around a Z-direction (the up-down direction) as a turning axis. The chuck table 41 is of a generally known vacuum chuck type where the wafer 1 is suck and held by vacuum suction action. In addition, the chuck table 41 is turned in one or both directions by a turning drive mechanism, not illustrated, housed in the chuck base 40. A pair of clamps 42 adapted to removably hold the frame 5 are arranged on the periphery of the chuck table 41 at positions apart from each other by 180°. The clamps 42 are mounted to the chuck base 40.
The X-Y traveling table 12 of this case is such that the X-directional traveling of the X-axis base 20 is set as processing-transfer where a laser beam is directed along the predetermined dividing line 2. The Y-directional traveling of the Y-axial base 30 is set as indexing-transfer where the predetermined dividing lines 2 to be irradiated with a laser beam are switched. Incidentally, processing-transfer and indexing-transfer directions may be reversed, that is, the Y-direction and the X-direction may be set as the processing-transfer and the indexing-transfer, respectively. In short, the processing-transfer and indexing-transfer directions are not restrictive.
A description is next given of the laser processing means 50. The laser processing means 50 includes a rectangular parallelepipedic casing 51 extending in the Y-direction toward the upside of the chuck table 41. The casing 51 supports the laser head 52 at the leading end. The casing 51 is provided on a column 13 provided upright on the upper surface of the base 11 so as to be movable vertically along the Z-direction and is moved upward and downward by an up-down drive mechanism, not illustrated, housed in the column 13.
Referring to
As illustrated in
The mask 60 transmits part of the laser beam L reflected by the mirror 56 to deform the transverse sectional shape of the laser beam L into a desired shape from its original circular shape. Since the mask 60 pertains to the present invention, it is detailed later. The laser beam L that has passed through the mask 60 passes through the relay lens 57 and the objective lens 58 and is directed to the predetermined dividing line 2 of the wafer 1 held by the chuck table 41.
As illustrated in
The above is the basic configuration of the laser processing machine 10. Laser processing performed by the machine 10 is as below. The wafer 1 to be laser-processed is first held by the frame 5 via the adhesive tape 4 as illustrated in
Next, the X-Y traveling table 12 is moved in the X- and Y-directions so that the wafer 1 is moved to a position immediately below the image pickup means 70. The front surface of the wafer 1 is imaged by the image pickup means 70. The image data on the front surface of the wafer 1 imaged by the image pickup means 70 is subsequently sent to the control means. The control means performs the alignment mentioned above and creates and stores operation data needed to perform laser processing on the predetermined dividing lines 2.
The casing 51 of the laser processing means 50 is next moved upward and downward so that the distance between the laser head 52 and the wafer 1 may be adjusted to a distance suitable for laser processing on the wafer 1. Next, while processing-transfer is performed based on the above operation data to move the X-axial base 20 of the X-Y traveling table 12 in the X-direction, the laser processing (groove formation and full-cut) and indexing-transfer are repeated. The laser processing is such that a laser beam is directed to one predetermined dividing line 2. The indexing-transfer is such that the Y-axial base 20 is moved in the Y-direction so that a laser beam may be directed to a predetermined dividing line 2 to be laser processed. In this way, laser processing is performed on a large number of the predetermined dividing lines 2 extending in one direction. After the laser processing on all the predetermined dividing lines 2 extending one direction has been finished, the chuck table 41 is turned by 90° and laser processing is performed in the same way on all predetermined dividing lines 2 extending in the other direction perpendicular to the one direction.
An example of the conditions of laser beam irradiation for laser processing is as below.
After the laser processing has been finished by irradiating all the predetermined dividing lines 2 with a laser beam, the wafer 1 is shifted to a subsequent step corresponding to the mode of the laser processing and the chips 3 are finally obtained. For example, if the laser processing is groove formation, the wafer 1 is full-cut by the remaining thickness thereof by the blade for dicing. The chips 3 are each peeled off and picked up from the adhesive tape 4. Alternatively, if the laser processing is full-cut, dicing is already completed. Thereafter, the chips are each peeled off and picked up from the adhesive tape 4.
A description is next given of the mask 60 of the collector optical system 55. Referring to
The material of the mask 60 is selected from ones insusceptible to even laser beam irradiation. For example, stainless steel (SUS), ceramics or the like are used. In particular, stainless steel is suitable because of reflecting a laser beam so that it is hard to be heated thereby. The mask 60 is formed at the center with a slit-like aperture (transmitting portion) 61 adapted to receive a laser beam passed therethrough. This aperture 61 is formed like an elongate symmetrical trapezoid extending in the reciprocative direction of the mask 60. The width of the aperture 61 varies at a given rate as it goes toward one direction of the reciprocative directions. The width of the broad side end of the aperture 61, i.e., the maximum width is set to a value equal to or smaller than the diameter of the circular transverse surface of a laser beam. If the mask 60 reciprocates, a laser beam passes through between one end and the other end of the aperture 61. At this time, the optical path of the laser beam passes the symmetric line of the aperture 61. In short, the center of the laser beam coincides with the Y-directional center of the aperture 61.
According to the collector optical system 55 including the mask 60, the laser beam L reflected toward the mask 60 by the mirror 56 passes through the aperture 61 of the mask 60. Both end edges of the aperture 61 shield a portion of the irradiation area of the laser beam L so that the transverse surface shape is formed into a shape corresponding to the aperture 61. The laser beam L passes through the relay lens 57 and the object lens 58 and is directed to and focused on the predetermined dividing line 2 of the wafer 1. As illustrated in
The distance between the mask 60 and the relay lens 57 is set to a value equal to a focal length F1 of the relay lens 57. In addition, the distance between the objective lens 58 and the wafer 1 is set to a value equal to a focal length F2 of the objective lens 58. In this case, as well known in the art, image magnification is F2/F1. As illustrated in
In this way, the mask 60 is shifted to vary the width of the laser beam L passing through the aperture 61, whereby the width of the processing line 2A can be varied. That is to say, such simple operation as to shift the mask 60 can easily adjust the width of the processing line 2A into a desired width. Since both the left and right end edges of the opening 61 are inclined in a tapered manner with respect to the shifting direction of the mask 60, the width of the image L1 can be adjusted in a stepless manner. In other words, by sifting the mask 60, the processing line 2A formed on the wafer 1 can be controlled with a high degree of accuracy. Alternatively, portions different in width from each other can continuously be formed in the processing line 2A.
According to the present embodiment, it is not necessary to perform such cumbersome work as to prepare a plurality of masks different in aperture width for replacement. By shifting the mask 60 as described above, the width of the processing line 2A formed on the wafer 1 can easily be adjusted to a desired width. Thus, the adjusting work for the width of the processing line 2A can be streamlined and a rise in cost can be suppressed.
The shape of the aperture 61 formed in the mask 60 is not limited to the embodiment described above. If the shape of the aperture can change the width of the image of the laser beam focused on the wafer 1 along with the shifting of the mask 60, any shape may be applicable.
The respective apertures 61 of
The apertures 61 of
The mask and mask shifting means of the present invention are not limited to the above embodiment but various modes are conceivable. Masks and the mask shifting means according to other embodiments will hereafter be exemplified.
Reference numeral 80 in
If the rollers 85, 86 are rotated in the direction of arrow B, the mask 80 is wound around the roller 85 to be shifted in a b-direction. As the mask 80 is shifted in the b-direction, the width of the aperture 81 adapted to receive a laser beam L passed therethrough is gradually broadened so that the width of the image focused on the wafer 1 is broadened accordingly. If the rollers 85, 86 are rotated in the direction of arrow C, the mask 80 is wound around the roller 86 to be shifted in a c-direction. As the mask 80 is shifted in the c-direction, the width of the aperture 81 adapted to receive the laser beam L passed therethrough is gradually narrowed so that the width of the image focused on the wafer 1 is narrowed accordingly. In short, by rotating the rollers 85, 86 to shift the mask 80, the width of the image of the laser beam 1 focused on the wafer 1 can be adjusted. The rollers 85, 86 are rotated by a rotation drive mechanism not illustrated so that the mask 80 is held in a constantly extensile state. Incidentally, the rollers 85, 86 may be such that one of them is used as the drive side and the other is used as the driven side. Alternatively, both of the rollers 85, 86 may be driven.
Reference numeral 90 in
The mask 90 is disposed so that the optical path of the laser beam L is perpendicular to and passes the centerline 91a of the aperture 91. The mask 90 is turned in two directions (D- and E-directions) by a turning drive mechanism not illustrated. As the mask 90 is turned in the D-direction, the width of the aperture 91 adapted to receive the laser beam L passed therethrough is narrowed so that the width of the image focused on the wafer 1 is narrowed accordingly. As the mask 90 is turned in the E-direction, the width of the aperture 91 adapted to receive the laser beam L passed therethrough is broadened so that the width of the image focused on the wafer 1 is broadened accordingly. In short, by turning the mask 90 to turn the aperture 91, the width of the image of the laser beam L focused on the wafer 1 can be adjusted.
In the first and second other embodiments described above, even if the shifting amount of the mask is large, the space needed to shift the mask does not vary regardless of the shifting amount. This can provide an effect that even if the space adapted to dispose the mask therein is small, the variation of the width of the aperture can be increased and space-saving can be achieved.
The present invention is not limited to the details of the above described preferred embodiments. The scope of the invention is defined by the appended claims and all changes and modifications as fall within the equivalence of the scope of the claims are therefore to be embraced by the invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2008-258187 | Oct 2008 | JP | national |
