Number | Date | Country | Kind |
---|---|---|---|
63-301718 | Nov 1988 | JPX | |
1-123601 | May 1989 | JPX |
This application is a continuation of application Ser. No. 07/440,191, filed on Nov. 22, 1989, now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
4300150 | Colak | Nov 1981 | |
4593458 | Adler | Jun 1986 | |
4672407 | Nakagawa et al. | Jun 1987 | |
4680604 | Nakagawa et al. | Jun 1987 | |
4742380 | Chang et al. | May 1988 | |
4779123 | Bencuya et al. | Oct 1988 | |
4782372 | Nakagawa et al. | Nov 1988 | |
4782379 | Baliga | Nov 1988 | |
4811065 | Cogan | Mar 1989 | |
4819045 | Murakami | Apr 1989 | |
4841345 | Majumdar | Jun 1989 | |
4857983 | Baliga et al. | Aug 1989 | |
4861731 | Bhagat | Aug 1989 | |
4873563 | Dalco et al. | Oct 1989 | |
4939566 | Singer et al. | Jul 1990 |
Number | Date | Country |
---|---|---|
133642A | Mar 1985 | EPX |
0228107 | Nov 1986 | EPX |
57-206073 | Dec 1982 | JPX |
62-039069 | Feb 1987 | JPX |
62-058683 | Mar 1987 | JPX |
2197987 | Nov 1987 | GBX |
Entry |
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MuKherjee et al., "LDMOS and LIGT's in CMOS Technology for Power Integrated Circuits", IEDM, Dec. 1987, pp. 778-781. |
Robinson et al., "Lateral Insulated Gate Transistors with Improved Latching Characteristics," IEDM, Dec. 1985, pp. 744-747. |
Gough et al., "Fast Switching Lateral Insulated Gate Transistor," IEDM, Dec. 1986, pp. 218-221. |
Extended Abstracts of the 20th International Conference on Solid State Devices and Materials, Tokyo, 24th-26th Aug. 1988, pp. 33-36, Tokyo, JP; A. Nakagawa et al.: "500V Lateral Double Gate Bipolar-Mode MOSFET (DGIGBT) Dielectrically Isolated by Silicon Wafer Direct-Bonding (DISDB)". |
Electronics Letters, 7th Jun. 1984, vol. 20, No. 12, p. 519, Lateral Resurfed COMFET: M. Parwich et al. |
IEDM 85, p. 740, Analysis of the Lateral Insulated Gate Transistor; M. R. Simpson et al. |
Number | Date | Country | |
---|---|---|---|
Parent | 440191 | Nov 1989 |