Anode regions of thyristors or gated bipolar-mode devices

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H01L29/0834

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0834Anode regions of thyristors or gated bipolar-mode devices

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including insulated gate bipolar transistor
- Patent number 12,224,316
- Issue date Feb 11, 2025
- Infineon Technologies Austria AG
- Christian Philipp Sandow
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Information Patent Grant
Vertical power semiconductor device and manufacturing method
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- Issue date Feb 11, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT with controlled anode injection
- Patent number 12,166,111
- Issue date Dec 10, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ekonde Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 12,119,395
- Issue date Oct 15, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,707
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,027,578
- Issue date Jul 2, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor package, semiconductor module,...
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- Issue date Jul 2, 2024
- Fuji Electric Co., Ltd.
- Kenichiro Sato
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Information Patent Grant
SCR having selective well contacts
- Patent number 12,027,612
- Issue date Jul 2, 2024
- Texas Instruments Incorporated
- Karmel Kranthi Nagothu
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Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,009,360
- Issue date Jun 11, 2024
- Mitsubishi Electric Corporation
- Munenori Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including IGBT, boundary, and diode regions
- Patent number 11,875,990
- Issue date Jan 16, 2024
- Mitsubishi Electric Corporation
- Tetsuya Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,869,961
- Issue date Jan 9, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side dopant activation in field stop IGBT
- Patent number 11,824,090
- Issue date Nov 21, 2023
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical overstress protection with low leakage current for high...
- Patent number 11,784,488
- Issue date Oct 10, 2023
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
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- Issue date Oct 10, 2023
- Kabushiki Kaisha Toshiba
- Hideaki Sai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including source/drain employing double-charge dopants
- Patent number 11,757,004
- Issue date Sep 12, 2023
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical power semiconductor device including a field stop region h...
- Patent number 11,742,384
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,735,584
- Issue date Aug 22, 2023
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,960
- Issue date Jun 13, 2023
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,631,665
- Issue date Apr 18, 2023
- Fuji Electric Co., Ltd.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,569,092
- Issue date Jan 31, 2023
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor diode including field stop region
- Patent number 11,569,392
- Issue date Jan 31, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,527,639
- Issue date Dec 13, 2022
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having IGBT and diode with field stop layer fo...
- Patent number 11,508,581
- Issue date Nov 22, 2022
- Fuji Electric Co., Ltd.
- Kouji Mukai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Testing apparatus, testing method, and manufacturing method
- Patent number 11,500,009
- Issue date Nov 15, 2022
- Fuji Electric Co., Ltd.
- Tetsutaro Imagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,489,047
- Issue date Nov 1, 2022
- Renesas Electronics Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing semiconductor device
- Patent number 11,469,297
- Issue date Oct 11, 2022
- Fuji Electric Co., Ltd.
- Takashi Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,462,615
- Issue date Oct 4, 2022
- Mitsubishi Electric Corporation
- Ryu Kamibaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,462,634
- Issue date Oct 4, 2022
- Mitsubishi Electric Corporation
- Koji Tanaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT
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- Publication date Jan 2, 2025
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- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
INSULATED GATE POWER DEVICE WITH EPITAXIALLY GROWN SUBSTRATE LAYERS
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- Publication date Dec 5, 2024
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371860
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240347586
- Publication date Oct 17, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE
- Publication number 20240322020
- Publication date Sep 26, 2024
- Kabushiki Kaisha Toshiba
- Daiki YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLU...
- Publication number 20240322023
- Publication date Sep 26, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Sang Dong YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE...
- Publication number 20240290828
- Publication date Aug 29, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Xingchong Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240258306
- Publication date Aug 1, 2024
- Mitsubishi Electric Corporation
- Munenori IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240234554
- Publication date Jul 11, 2024
- Fuji Electric Co., Ltd.
- Naoki MITAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240162287
- Publication date May 16, 2024
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240128320
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Shuntaro YAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240055483
- Publication date Feb 15, 2024
- Fuji Electric Co., Ltd.
- Yuki KARAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD STOP IGBT WITH GROWN INJECTION REGION
- Publication number 20240055484
- Publication date Feb 15, 2024
- IPOWER SEMICONDUCTOR
- HAMZA YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE COMPRISING A SWITCHABLE BYPASS DEVICE
- Publication number 20230411503
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICO...
- Publication number 20230369515
- Publication date Nov 16, 2023
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361111
- Publication date Nov 9, 2023
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Semiconductor Device and Manufacturing Method
- Publication number 20230352531
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230307446
- Publication date Sep 28, 2023
- Fuji Electric Co., Ltd.
- Yuichi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230290828
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230268341
- Publication date Aug 24, 2023
- Fuji Electric Co., Ltd.
- Yuichi ONOZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP UNIPOLAR/BIPOLAR TRANSISTOR
- Publication number 20230246073
- Publication date Aug 3, 2023
- Wolfspeed, Inc.
- Thomas E. Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230197827
- Publication date Jun 22, 2023
- RENESAS ELECTRONICS CORPORATION
- Zhichao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT DEVICE BACKSIDE STRUCTURE AND PREPARATION METHOD THEREFOR, AND...
- Publication number 20230077959
- Publication date Mar 16, 2023
- STATE GRID SMART GRID RESEARCH INSTITUTE CO., LTD.
- Li LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230083162
- Publication date Mar 16, 2023
- Mitsubishi Electric Corporation
- Kazuya KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230038712
- Publication date Feb 9, 2023
- Fuji Electric Co., Ltd.
- Yuichi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230039920
- Publication date Feb 9, 2023
- Fuji Electric Co., Ltd.
- Misaki UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF, A...
- Publication number 20230015515
- Publication date Jan 19, 2023
- BYD SEMICONDUCTOR COMPANY LIMITED
- Hui ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION
- Publication number 20220406600
- Publication date Dec 22, 2022
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220392891
- Publication date Dec 8, 2022
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN RC-IGBT
- Publication number 20220384624
- Publication date Dec 1, 2022
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS

Anode regions of thyristors or gated bipolar-mode devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including insulated gate bipolar transistor

Vertical power semiconductor device and manufacturing method

Reverse conducting IGBT with controlled anode injection

Insulated gate bipolar transistor

Semiconductor device

Semiconductor device

Semiconductor device, semiconductor package, semiconductor module,...

SCR having selective well contacts

Semiconductor device and method for manufacturing the same

Semiconductor device including IGBT, boundary, and diode regions

Semiconductor device and method of manufacturing semiconductor device

Diode structure of a power semiconductor device

Power semiconductor device having overvoltage protection and method...

Back side dopant activation in field stop IGBT

Electrical overstress protection with low leakage current for high...

Semiconductor device

Transistors including source/drain employing double-charge dopants

Vertical power semiconductor device including a field stop region h...

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

Power semiconductor diode including field stop region

Semiconductor device

Semiconductor device having IGBT and diode with field stop layer fo...

Testing apparatus, testing method, and manufacturing method

Semiconductor device and method of manufacturing the same

Semiconductor device and method for producing semiconductor device

Semiconductor device

Semiconductor device and manufacturing method thereof

Patents Applicationslast 30 patents

IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT

INSULATED GATE POWER DEVICE WITH EPITAXIALLY GROWN SUBSTRATE LAYERS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLU...

METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE

FIELD STOP IGBT WITH GROWN INJECTION REGION

MODULE COMPRISING A SWITCHABLE BYPASS DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICO...

SEMICONDUCTOR DEVICE

Vertical Power Semiconductor Device and Manufacturing Method

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE

WIDE BANDGAP UNIPOLAR/BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

IGBT DEVICE BACKSIDE STRUCTURE AND PREPARATION METHOD THEREFOR, AND...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF, A...

SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING AN RC-IGBT