Claims
- 1. A photoconductive member which comprises a support for a photoconductive member and an amorphous layer having photoconductivity and containing an amorphous material comprising silicon atom as a matrix, said amorphous layer having a first layer region containing oxygen atoms, a second layer region containing Group III atoms of the Periodic Table such that said Group III atoms are continuously distributed in the direction of the layer thickness and enriched at the support side, and wherein oxygen is absent from said amorphous layer exclusive of the first layer region, said first layer region being present internally in the support side portion of the amorphous layer, and there being the following relationship:
- To/T.ltoreq.1
- where T.sub.0 is the layer thickness of the first layer region and T results from subtracting To from the layer thickness of the amorphous layer; To is 50 microns or less; T is 0.5 micron or more and the sum of (To+T) is 1 to 100 microns.
- 2. A photoconductive member according to claim 1 in which the first layer region and the second layer region share in common at least a portion of said mutual region.
- 3. A photoconductive member according to claim 1 in which the second layer region occupies the substantially whole layer region of the amorphous layer.
- 4. A photoconductive member according to claim 1 in which the first layer region is provided as an end layer region at the support side of the amorphous layer.
- 5. A photoconductive member according to claim 1 in which the second layer region is provided as an end layer region at the support side of the amorphous layer.
- 6. A photoconductive member according to claim 1 in which the amorphous layer contains hydrogen atoms.
- 7. A photoconductive member according to claim 6 in which the content of hydrogen atoms in the amorphous layer is 1-40 atomic %.
- 8. A photoconductive member according to claim 1 in which the amorphous layer contains halogen atoms.
- 9. A photoconductive member according to claim 8 in which the content of halogen atoms in the amorphous layer is 1-40 atomic %.
- 10. A photoconductive member according to claim 1 in which the amorphous layer contains both hydrogen atoms and halogen atoms.
- 11. A photoconductive member according to claim 10 in which the total content of hydrogen atoms and halogen atoms in the amorphous layer is 1-40 atomic %.
- 12. A photoconductive member according to claim 1 in which the content of oxygen atoms in the first layer region is 0.001-50 atomic %.
- 13. A photoconductive member according to claim 1 in which the content of the Group III atoms in the second layer region is 0.01-5.times.10.sup.4 atomic ppm.
- 14. A photoconductive member according to claim 1 in which the second layer region has the maximum concentration of the Group III atoms (C.sub.max) in the end layer region at the support side.
- 15. A photoconductive member according to claim 13 in which C.sub.max is 50 atomic ppm or more.
- 16. A photoconductive member according to claim 13 in which C.sub.max is in the layer region within 5.mu. from the end portion at the support side in the second layer region.
- 17. A photoconductive member according to claim 1 in which an amorphous layer comprising an amorphous material containing silicon atoms and carbon atoms is disposed on the amorphous layer having photoconductivity.
- 18. A photoconductive member according to claim 16 in which the amorphous material containing carbon atoms contains further hydrogen atoms.
- 19. A photoconductive member according to claim 16 in which the amorphous material containing carbon atoms contains further halogen atoms.
- 20. A photoconductive member according to claim 16 in which the amorphous material containing carbon atoms contains further both hydrogen atoms and halogen atoms.
- 21. A photoconductive member according to claim 16 in which the thickness of the amorphous layer containing carbon atoms is 0.003-30.mu..
Parent Case Info
This application is a continuation-in-part of application Ser. No. 837,558, filed Mar. 3, 1986, now abandoned, which was a continuation of application Ser. No. 700,078, filed Feb. 11, 1985, now abandoned, which was a continuation of application Ser. No. 475,372, filed Mar. 14, 1983, now abandoned.
US Referenced Citations (27)
Continuations (2)
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Number |
Date |
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Parent |
700078 |
Feb 1985 |
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Parent |
475372 |
Mar 1983 |
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Continuation in Parts (1)
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Number |
Date |
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Parent |
837558 |
Mar 1986 |
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