FIELD
The present disclosure generally relates to emission of light by highly crystalline materials, structures and devices fabricated and designed in a specific manner allowing for such light emission. The light emission, taking place in the ultraviolet UV and visible spectral ranges, is linked to bulk and surface plasmon polaritons in the materials and their interfaces, to the intraband and interband transitions of the electrons and holes in the valence band and conduction band, to the coupling between the surface plasmon polaritons and the particles generated in the intraband and interband transitions. The light emission is further linked to the oxygen related states on the Si and Ge interfaces with their oxides. The light emission, however, cannot happen without the presence of at least one of the following quasi-particles: surface plasmons, surface plasmon polaritons, bulk plasmons and/or bulk plasmon polaritons.
BACKGROUND
Light emitters are material, structures or devices capable of emission of light when voltage or light of another wavelength or electron beam is applied to them. One type of light emitters is the emitters of visible light such as broadband lamps sources (in terms of spectral width of the emission). Another type of light emitter emits narrow spectral light such as light emitting diodes (LED), organic LED (OLED). Another type of light source is the laser, which is an emitter of coherent, narrow spectral light. Yet another type of emitters can emit light in ultra-violet or infrared spectral ranges.
The light emitters have a broad range of applications—for lighting, in TV screens, automobiles, data transmission, computers, radars, decoration, military, entertaining industry, night vision, sensor technologies, traffic control, in manufacturing or control in the manufacturing processes.
All existing to date light emitters are characterized by at least one of the following features—high power consumption, relatively high price, requirement of special technology for fabrication, use of relatively expensive materials for fabrication or non-compatibility to the silicon (Si)-based technology.
However, a light source based on a group-IV material—silicon (Si), germanium (Ge), tin (Sn), lead (Pb), carbon (C, for instance silicon carbide SiC), erbium (Er) or a combination of them—would bring enormous advantages for the Si-based industry and related industries.
The present invention is an efficient light emitter based on Si or Ge or combination of them or combination of these materials with their oxides or combination of them with antimony (Sb) or any doping.
BRIEF DESCRIPTION OF THE DRAWINGS
The following is a brief description of the figures wherein the definitions “material structure” and “structure” are equal. All the materials are to be understood as highly crystalline or monocrystalline.
FIG. 1 is a diagram, illustrating a material structure composed of simply bulk monocrystalline Si.
FIG. 2A is a diagram illustrating a two-layer structure Ge/Si.
FIG. 2B is a diagram illustrating a two-layer structure SiO/Si.
FIG. 2C is a diagram illustrating a two-layer structure SiO2/Si.
FIG. 3A is a diagram illustrating a two-layer structure Ge/SiO0.5.
FIG. 3B is a diagram illustrating a two-layer structure Si/SiO0.5.
FIG. 4A is a diagram illustrating a two-layer structure Ge/SiO.
FIG. 4B is a illustrating a two-layer structure Si/SiO.
FIG. 5A is a diagram illustrating a two-layer structure Ge/SiO2.
FIG. 5B is a diagram illustrating a two-layer structure Si/SiO2.
FIG. 6A is a diagram illustrating a two-layer structure GeO/Ge.
FIG. 6B is a diagram illustrating a two-layer structure GeO2/Ge.
FIG. 7 is a diagram of a multilayer structure consisting of any combination of the above mentioned materials.
FIG. 8A is a diagram of a device based on one or more of the above mentioned materials. The diagram illustrates a device capable of light emission in UV, violet or visible spectral range when excitation of the structure by electrical mean i.e. bias is applied.
FIG. 8B is a diagram of a device based on one or more of the above mentioned materials. The diagram illustrates a device capable of light emission in UV, violet or visible spectral range when excitation of the structure by optical mean i.e. by light is applied.
FIG. 8C is a diagram of a device based on one or more of the above mentioned materials. The diagram illustrates a device capable of light emission in UV, violet or visible spectral range when excitation of the structure by electron beam is applied.
Optical excitation or excitation by bias can be applied to a multilayer structure (FIG. 7) in the similar way as in FIG. 8A or FIG. 8B.
FIG. 9 is a diagram illustrating a device, in which one of the above mentioned structures is placed in a resonator or a cavity for light amplification.
DETAILED DESCRIPTION
The present invention will now be described with reference to the attached drawing figures, wherein like reference numerals are used to refer to like elements throughout, and wherein the illustrated structures and devices are not necessarily drawn to scale.
The light emitters in the present invention are based on a single-layer or bi-layer or a multi-layer material structure. The materials are monocrystalline, where applicable. The structure emits UV or visible light when excited electrically, optically or by an electron beam. The size, shape and composition of the materials forming the structure(s) can be varied or adjusted to form different devices, properties or features.
FIG. 1 is a diagram illustrating a structure from bulk monocrystalline Si. The Si can be intrinsic or doped. The structure is capable of UV/visible light emission under electrical or optical excitation or under excitation by an electron beam.
The bi-layer structures illustrated in FIG. 2A, FIG. 2B, FIG. 2C, FIG. 3A, FIG. 3B, FIG. 4A, FIG. 4B, FIG. 5A, FIG. 5B, FIG. 6A and FIG. 6B are capable of UV and/or visible light emission under electrical excitation (electroluminescence) or optical excitation (photoluminescence) or under excitation by an electron beam (cathodo-luminescence). The structures are composed of monocrystalline Si (undoped or doped), monocrystalline Ge (undoped or doped) and their oxides in combinations as depicted in the figures.
FIG. 7 is a diagram illustrating a multilayer structure composed of any combination of the following materials—Si, Ge, SiO, SiO2, SiO0.5, SiOx, where 0≤x≤1. Any layer of the multi-layer structure can be intrinsic or doped.
The doping can be p-type or n-type such as B (boron), Sb (antimony), P (phosphorous) or else. The doping is important for light emission even in the case of excitation of the structure(s) by optical beam or by electron beam. The doping changes the dielectric constant of the material, which in turn changes the spectral position of the plasmon and the plasmon polariton.
FIG. 8A is a diagram illustrating electrical excitation of a single-layer or bi-layer or multi-layer structure. The electrical excitation is done by means of application of bias. Electrode layers are deposited on both sides of the structure. The bias is applied to the electrodes. A barrier layer can be deposited between the electrode layer and the light emitting layer. In one example, the structure under electrical excitations is composed of the following layers ordered in a strict order: Cs (cesium) or Au (gold) electrode layer/emitting material/LaGdO3 barrier layer/LaB6 electrode layer. In another example, the structure under electrical excitations is composed of the following layers ordered in a strict order: Cs (cesium) or Au (gold) electrode layer/emitting material/LaBaO3 barrier layer/LaB6 electrode layer. The metals Cs and Au are selected due to their low work functions necessary in the electric excitation. In another example, other materials can be used as electrode layers and barrier layer. Unlike the conventional p-n, p-i-n or other junctions known to date, the presented structures in FIG. 7A generates light also by undoped materials and only when surface or/and bulk plasmons or plasmon polaritons are present (generated) in the material(s).
The generation of the surface plasmons, surface plasmon polaritons, bulk plasmons and/or bulk plasmon polaritons occurs simultaneously with the excitation bias/beam.
FIG. 8B is a sketch showing excitation of the structure by optical mean. In one example, the excitation source is a light source of a smaller wavelength as comparison to the wavelength of the emission from the structure (λexcitation<λemission). In another example, the excitation source is a broad band light source.
FIG. 8C is a sketch showing excitation of the structure by an electron beam. The structure is capable of light emission of UV and visible light under bombardment of the material (structure) by an electron beam. An electrode layer/structure can be deposited on the back surface or/and the front surface of the structure required for this type of excitation. In another example, the material structure is placed on a metal support playing the role of the electrode. Yet in another example, the electrode may be placed away from the material structure. The purpose of the electrode is to accelerate the electron beam (emitted from a cathode electrode) toward the material structure.
FIG. 9 illustrates a device, wherein the emitting structure named “material system” is placed in a resonator or a cavity. The purpose of the resonator/the cavity is to amplify the light emitted from the structure. The device also includes one or more additional units such as a control unit, a power supply unit and a readout unit. Additional unit may be the excitation source.
The material system in FIG. 8C and FIG. 9 may be placed in vacuum environment.
Patent Application
20190353519
