1. Field of the Invention
The present invention relates to a light irradiating apparatus suitable for a resin-welding light irradiating apparatus that irradiates an infrared laser beam to weld resin members and a welding method using the light irradiating apparatus.
2. Description of the Related Art
Conventionally, methods of bonding resin members to each other include a method of bonding resin members using an adhesive and other welding methods such as heat plate welding, vibration welding, ultrasonic welding, and spin welding. Recently, a laser welding method having an advantage of, for example, no influence on a filler and no worry about scratches on a product has been known.
The laser welding method is a method of welding resin members by bringing a resin member that is non-absorptive (transparent) to a laser beam and a resin member that is absorptive (non-transparent) to the laser beam into contact with each other. More specifically, the method employs irradiating a bonding surface with a laser beam from a non-absorptive resin member side to heat and melt an absorptive resin member that forms the bonding surface, with energy of the laser beam and heating and melting the bonding surface of the non-absorptive resin member with heat conduction from the bonding surface of the absorptive resin member to thereby integrally bond the bonding surfaces to each other (see, for example, Japanese Patent Application Laid-Open No. S60-214931). Therefore, if the energy of the laser beam is sufficiently absorbed in the bonding surfaces of the non-absorptive resin member and the absorptive resin member to sufficiently heat and melt the bonding surfaces, high bonding strength can be obtained.
Japanese Patent Application Laid-Open No. 2000-98191 discloses a technology for, to efficiently input a laser beam from a semiconductor laser array having a two-dimensional array structure to an optical fiber and efficiently output the laser beam from the optical fiber, collimating a laser beam emitted from a stack-type semiconductor laser array having a large number of light-emitting points arrayed in a matrix shape with a collimating lens, condensing the laser beam in both vertical and horizontal directions with a condenser lens, condensing and making the laser beam incident on input facets arrayed in a matrix shape of an optical fiber array having optical fibers smaller in number than the light-emitting points, and binding the optical fibers as a bundle.
In the conventional laser welding method disclosed in Japanese Patent Application Laid-Open No. S60-214931 and the like, a light intensity profile of the laser beam condensed and irradiated on the bonding surfaces is, for example, a profile having high intensity in the center of the profile as indicated by a broken line A in
In the technology disclosed in Japanese Patent Application Laid-Open No. 2000-98191, for example, when the semiconductor laser is used as an pumping light source of a solid-state laser, an increase in power of a laser beam used for pumping is indispensable. However, because a semiconductor laser with a single light-emission point has a limit in power intensity, in an attempt to realize a further increase in power, the optical fibers are bound and light power is condensed to obtain higher light intensity. Therefore, even if the technology disclosed in Japanese Patent Application Laid-Open No. 2000-98191 is applied to the field of laser welding and the like, light intensity of an irradiated laser beam can be merely increased, which cannot solve the problem in Japanese Patent Application Laid-Open No. S60-214931 in increasing the welding area.
When a laser beam is scanned to perform linear or curved resin welding, it is necessary to take into account an integral value of a passing beam rather than an instantaneous beam profile. A method of decreasing scan speed to enlarge the welding area is also conceivable. However, when a beam having a profile with high center intensity is scanned, it is likely that integrated intensity in the center further increases. Therefore, the problem of the increase in only the temperature in the center is highlighted. However, in the conventional laser welding method, the integrated intensity is not specifically taken into account.
When the resin is welded, regardless of presence or absence of scanning of a laser beam, a profile exhibiting two peaks in which light intensity is low near the center of the profile and high around the center may be preferable. In particular, when thermal conductivity of resin is low, whereas heat given to the periphery of the resin easily escapes, heat in the center less easily escapes. Therefore, even when a laser beam with a flat beam profile is irradiated on the resin, in some cases, the temperature in the center rises and degradation in the center area is observed. However, in the conventional laser welding method, a reduction in laser beam intensity in the center is not specifically taken into account.
In the conventional laser welding apparatus, when a laser is an invisible light, for example, an infrared light, a visible light for grasping an irradiation position is simultaneously input as a guide light. However, a beam profile of the visible light does not reflect a beam profile of an actual laser beam. Therefore, to look at the profile of the actual laser beam, it is necessary to measure the profile with a beam profiler or a laser detection card and the like are necessary.
It is an object of the present invention to at least partially solve the problems in the conventional technology.
A light irradiating apparatus according to one aspect of the present invention includes a light source unit including an emission surface and a plurality of point light sources arranged on the emission surface; and an optical system that focuses a plurality of light beams emitted from the point light sources into a single light beam and irradiates a target object to be irradiated with the single light beam. The single light beam is obtained with a desired light intensity profile according to a combination of positions where the point light sources are arranged and intensity distributions of the light beams emitted from the point light sources.
A welding method according to another aspect of the present invention uses a light irradiating apparatus that includes a light source unit including an emission surface and a plurality of point light sources arranged on the emission surface, and an optical system that focuses a plurality of light beams emitted from the point light sources into a single light beam and irradiates a target object to be irradiated with the single light beam. The single light beam is obtained with a desired light intensity profile according to a combination of positions where the point light sources are arranged and intensity distributions of the light beams emitted from the point light sources. The light beams emitted from the point light sources are infrared laser beams. The target object is a resin member, a bonding surface of which is welded by irradiation of the light beam having the desired light intensity profile.
The above and other objects, features, advantages and technical and industrial significance of this invention will be better understood by reading the following detailed description of presently preferred embodiments of the invention, when considered in connection with the accompanying drawings.
Exemplary embodiments of the present invention are explained in detail below with reference to the accompanying drawings. A light irradiating apparatus according to an embodiment of the present invention explained below indicates an example of application to a light irradiating apparatus for resin welding that irradiates an infrared laser beam on bonding surfaces of resin members as objects to be irradiated to weld the resin members. However, a light irradiating apparatus according to the present invention is not limited to the resin member welding and is also applicable to, for example, welding of metals. A light beam to be used is not limited to the infrared laser beam.
The resin member 101 located on an incidence side of the infrared laser beam may be any kind of resin as long as the resin exhibits transparency to an incident laser beam. Examples of the resin include polyamide, polyethylene, polypropylene, and styrene-acrylonitrile copolymer. When necessary, resin added with reinforcing fiber such as glass fiber or carbon fiber may be used. On the other hand, the resin member 102 located on an inner side with respect to the incident infrared laser beam may be any kind of resin as long as the resin exhibits absorptiveness to the incident laser beam. The resin members 101 and 102 independently have desired characteristics. Besides, for example, an additive exhibiting absorptiveness to a laser beam may be dispersed in the resin member 102 or absorptive paint may be applied to the surface thereof. Moreover, absorptive resin may be sandwiched between the resin members 101 and 102. As a specific example of such resin members 101 and 102, for example, those disclosed in Japanese Patent Application Laid-Open No. 2004-299395 and Japanese Patent Application Laid-Open No. 2004-299395 can be suitably used. As an example, in the present embodiment, resin such as polyamide or polypropylene is used for the resin members 101 and 102. Carbon black for absorbing a laser beam is included in the resin member 102.
Therefore, as in the case of Japanese Patent Application Laid-Open No. S60-214931, a laser welding method according to the present embodiment has a principle of condensing and irradiating an infrared laser beam on the bonding surfaces 103a and 103b from the non-absorptive resin member 101 side with the laser head 104 to heat and melt the absorptive resin member 102, which forms the bonding surface 103b, with energy of the infrared laser beam and heating and melting the bonding surface 103a of the non-absorptive resin member 101 with heat conduction from the bonding surface 103b of the absorptive resin member 102 to thereby integrally bond the bonding surfaces 103a and 103b to each other.
The laser head 104 includes, as shown in
The multi-core capillary 111 is a capillary of a columnar shape in which an optical fiber 113 is inserted in each of a plurality of optical fiber insertion holes. When necessary, the multi-core capillary 111 is combined with a cylindrical sleeve to be formed as a multi-core ferrule of a cylindrical shape or a square shape. As the ferrule in this case, a zirconia ferrule, a glass ferrule, a metal ferrule, or the like is used as appropriate.
Incidence sides of the optical fibers 113 inserted in the multi-core capillary 111 are drawn into the laser main body 105 through the fiber guide 106 and optically coupled to respective semiconductor lasers 121 as light-emission sources provided in the laser main body 105. One of a plurality of the semiconductor lasers 121 is set as a semiconductor laser 121g for an optical fiber corresponding to the emission facet for guide light 115g. In association with the emission facets 115i and 115o grouped according to the positions arranged as indicated by the black circles and the hatched circles, the semiconductor lasers 121 are also grouped as inner semiconductor lasers 121i and outer semiconductor lasers 121o.
In the present embodiment, a plurality of the inner semiconductor lasers 121i and a plurality of the outer semiconductor lasers 121o, the optical fibers 113 that propagate light (infrared laser beams) from the inner semiconductor lasers 121i and the outer semiconductor lasers 121o, and the multi-core capillary 111 form a light source unit 122. The emission facets 115i and 115o of the optical fibers 113 on the emission surface 114 of the multi-core capillary 111 form a plurality of point light sources. The emission facet for guide light 115g forms a point light source for guide light.
The laser main body 105 includes a control unit 123 that controls light-emission power and the like of the semiconductor lasers 121. The control unit 123 is adapted to control light-emission power of the respective semiconductor lasers in units of the grouped inner semiconductor lasers 121i and outer semiconductor lasers 121o. Consequently, an intensity distribution of light beams emitted from the emission facets 115i and 115o is also controlled in units of the grouped emission facets.
An example of a specific structure of the present embodiment is explained. As an example, semiconductor lasers that emit infrared laser beams having light-emission power of 5 W and a wavelength of 915 nanometers are used as the inner semiconductor lasers 121i and the outer semiconductor lasers 121o. Multi-mode fibers having a core diameter of 105 micrometers and a clad diameter of 125 micrometers are used as the optical fibers 113. The emission facets 115i and 115o of the optical fibers 113 are arranged on a two-dimensional coordinate surface at intervals of 250 micrometers as shown in
According to the graph shown in
Light intensity profiles of the characteristics P3 to P5 exhibiting bimodality that are possible according to a combination of the positions where the emission facets 115 are arranged and an intensity distribution of light beams emitted from the emission facets 115 according to the present embodiment is considered with reference to
In particular, in laser welding, as indicated by an irradiation power P-adhesiveness F characteristic in
In the case of a light intensity distribution profile exhibiting flatness in which light intensity is flat near the center thereof as indicated by the characteristic P2, it is possible to increase a welding area without substantially increasing light-emission power in spot welding, which does not involve scanning, and improve bonding strength.
In some case, even if a laser beam having a flat beam profile is irradiated, the temperature in the center rises and degradation in the center is observed. This is considered to be because, when thermal conductivity of resin is small, whereas heat given to the periphery thereof easily escapes, heat in the center thereof less easily escapes and the temperature rises. According to the light intensity profiles of the characteristics P3 to P5 exhibiting bimodality in
Therefore, for example, such a characteristic P5 exhibiting bimodality is set as a desired light intensity profile and an infrared laser beam having the light intensity profile of the characteristic P5 is irradiated on the bonding surfaces 103a and 103b to scan the bonding surfaces 103a and 103b in the Y-axis direction. Consequently, unlike the cases of the characteristic P1 and the characteristic P2, an intensity distribution is not high only in the center in the welding scanning width. It is possible to satisfactorily perform resin welding under a substantially uniform intensity distribution over the entire welding scanning width.
Moreover, in the above explanation, when a laser beam is scanned, a scanning direction is fixed. However, it is possible to eliminate scanning directional properties by optimizing a ratio of light intensity in an arrangement shown in
As described above, according to the present embodiment, light beams emitted from the emission facets 115 arranged on the emission surface 114 are focused into a single light beam by the condenser lens 112 and irradiated on the bonding surfaces 103a and 103b. The single light beam irradiated on the bonding surfaces 103a and 103b obtains a desired light intensity profile according to a combination of positions where the respective emission facets 115 are arranged and an intensity distribution of light beams emitted from the respective emission facets 115. Therefore, the desired light intensity profile required of the one output light beam can be realized by a setting of an arrangement of the emission facets 115 and variable control of the light intensity distribution of the respective emission facets 115. Therefore, it is possible to obtain, without increasing light-emission intensity more than necessary, a light output of a desired light intensity profile suitable for purposes such as an increase in a welding area, for example, a profile exhibiting bimodality in which light intensity is low near the center thereof and high around the center or a profile exhibiting flatness in which light intensity is flat near the center thereof. Furthermore, it is also possible to realize a desired light intensity profile suitable for purposes such as an increase in a welding area, for example, a profile exhibiting bimodality in which light intensity is low near the center thereof and light intensity is high around the center or a profile exhibiting flatness in which light intensity is flat near the center thereof, not only for a spot welding but also for an integral of an intensity profile in a scanning.
In this case, although an infrared laser beam irradiated on the bonding surfaces 103a and 103b are invisible, the emission facet for guide light 115g that emits red light is provided in the center position of the emission facets 115i and 115o to simultaneously irradiate the led light on the bonding surfaces 103a and 103b. This makes it easy to visually check a welding position.
In the present embodiment, the control unit 123 is provided to variably control at least one of light intensities of light beams emitted from the emission facets 115i and 115o (the semiconductor lasers 121i and 121o). However, it is also possible that, without using a control system by the control unit 123, when, for example, a desired welding area (welding scanning width) is known as a welding condition, a light beam having light intensity designed in advance to obtain a desired light intensity profile suitable for the welding area is emitted. This can also be realized easily if a light beam of a desired intensity distribution set in advance in units of the grouped emission facets 115i and 115o according to positions where the emission facets 115i and 115o area arranged to obtain a desired light intensity profile is emitted.
The emission facets 115i and 115o are not limited to the multiple arrangement of a doughnut shape on the inner and outer peripheral concentric circles and may be arranged, for example, in one-fold in positions on an single identical concentric circumference as indicated by black circles in
Moreover, examples of the arrangement of the emission facets 115 are not limited to the arrangements in positions on circumferences shown in
Examples of the arrangement of the emission facets 115 are not limited to the arrangements according to the predetermined positional relations described above. For example, it is also possible that, as shown in
Moreover, as an example of the arrangement of the emission facets 115, as shown in
Furthermore, in the example explained above, the point light sources arranged on the emission surface 114 are the emission facets 115 of the optical fibers 113. However, light-emission sources such as semiconductor lasers or LEDs may be directly embedded and arranged on the emission surface 114.
The present invention is not limited to the embodiments described above and various modifications of the present invention are possible without departing from the spirit of the present invention.
Although the invention has been described with respect to a specific embodiment for a complete and clear disclosure, the appended claims are not to be thus limited but are to be construed as embodying all modifications and alternative constructions that may occur to one skilled in the art that fairly fall within the basic teaching herein set forth.
Number | Date | Country | Kind |
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2005-204817 | Jul 2005 | JP | national |
Number | Date | Country | |
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Parent | PCT/JP2006/313793 | Jul 2006 | US |
Child | 12013059 | US |