Patent Application
20220397651
The technology according to the present disclosure (the present technology) relates to a light receiving element forming a gate type indirect ToF (Time of Flight), for example, and a ranging module including the light receiving element.
As a light receiving element forming the gate type indirect ToF method (which may be referred to as a “gate type indirect ToF sensor” in the following description), for example, there is a configuration disclosed in PTL 1. In the gate type indirect ToF sensor disclosed in PTL 1, each floating diffusion is sandwiched between transfer gates of different transfer transistors in a pixel having plural floating diffusions in a unit pixel.
However, the technology disclosed in PTL 1 has a problem that parasitic light sensitivity is not uniformly reduced because plural transfer gates between which the floating diffusion is sandwiched are arranged line-symmetrically with respect to an optical center.
In view of the above problem, an object of the present technology is to provide a light receiving element and a ranging module capable of uniformly reducing the parasitic light sensitivity.
A light receiving element according to one aspect of the present technology includes plural transfer gates that distribute and transfer, to plural floating diffusions, signal charge accumulated in a photodiode that performs photoelectrical conversion of incident light. Further, at least two of the plural transfer gates are arranged point-symmetrically with respect to an optical center when viewed from an incident direction of the light.
A ranging module according to one aspect of the present technology includes a light receiving element including plural transfer gates, a light emitting unit that emits irradiation light whose brightness changes periodically, and a light emission control unit that controls irradiation timing of the irradiation light. The plural transfer gates distribute and transfer, to plural floating diffusions, signal charge accumulated in a photodiode that performs photoelectrical conversion of incident light. Further, at least two of the plural transfer gates are arranged point-symmetrically with respect to an optical center when viewed from an incident direction of the light.
Hereinafter, embodiments of the present technology will be described with reference to the drawings. In the description of the drawings, the same or similar parts are designated by the same or similar reference signs, and duplicate description will be omitted. Each drawing is schematic and may differ from the actual one. The embodiments depicted below exemplify devices and methods for embodying the technical idea of the present technology, and the technical idea of the present technology does not specify the devices and methods exemplified in the following embodiments. The technical idea of the present technology can be modified in various ways within the technical scope described in the claims.
<Ranging Module>
As depicted in
The ranging module 1 is a device for irradiating an object whose distance is to be measured with light emitted from the light emitting unit 2, and measuring the distance to the object by using light reflected by the object and incident on the light receiving element 10.
<Light Emitting Unit>
The light emitting unit 2 has a light source that emits light set to a predetermined wavelength, and emits irradiation light whose brightness fluctuates periodically to irradiate an object. The light source includes, for example, a light emitting diode that emits infrared light having a wavelength set in the range of 780 [nm] to 1000 [nm] inclusive. Further, the light emitting unit 2 generates irradiation light in synchronization with a light emission control signal CKp forming a rectangular wave supplied from the light emission control unit 4.
<Light Emission Control Unit>
The light emission control unit 4 controls an irradiation timing of the irradiation light by supplying the light emission control signal CLKp to the light emitting unit 2 and the light receiving element 10. A frequency of the light emission control signal CLKp is 20 [MHz], for example. Note that the frequency of the light emission control signal CLKp is not limited to 20 [MHz], and may be 5 [MHz] or the like. Further, the light emission control signal CLKp is not limited to a rectangular wave shape as long as it is a periodic signal. For example, the light emission control signal CLKp may form a sine wave.
<Light Receiving Element>
The light receiving element 10 receives the reflected light reflected by the object, and calculates distance information for each pixel according to the light receiving result, thereby generating a depth image representing the distance to the object by a grey scale value for each pixel to output the image. Further, the light receiving element 10 is formed by using a gate type indirect ToF sensor of a back-illuminated type, for example.
Further, the light receiving element 10 calculates distance information for each pixel from a signal intensity detected by one pixel formed by arranging plural unit pixels, on the basis of the light emission control signal CLKp, for example.
Further, as depicted in
<First Semiconductor Layer>
The first semiconductor layer 10A is a substrate on which a pixel circuit including a photodiode PD and plural floating diffusions FD is arranged. Further, the first semiconductor layer 10A has plural transfer gates TG and plural overflow gates OFG.
<Second Semiconductor Layer>
The second semiconductor layer 10B is a substrate stacked on a surface of the first semiconductor layer 10A opposite to the surface on which the photodiode PD is arranged (lower surface in
<Light-Shielding Film>
The light-shielding film 20 is arranged at a position closer to the position where the light is incident on the light receiving element 10 than the photodiode PD is. Further, the light-shielding film 20 is a film that performs shielding in such a manner that the range of light incident on the photodiode PD is a preset range. Incidentally, the light incident on the light receiving element 10 is transmitted through an on-chip lens 30 and an antireflection layer 40 and incident on the light-shielding film 20.
<On-Chip Lens>
The on-chip lens 30 is a lens having a function of condensing light toward the photodiode PD. Further, the on-chip lens 30 is arranged on the side of the light receiving element 10 on which the light to the photodiode PD is incident. As a material of the on-chip lens 30, an organic material or a silicon oxide film (SiO2), for example, can be used.
<Photodiode>
The photodiode PD photoelectrically converts the incident light that has passed through the range set by the light-shielding film 20, and generates and accumulates electric charge according to the amount of light of the photoelectric conversion. Further, as depicted in
Further, the photodiode PD is formed by using Si, Ge, or the like in a separation region formed by using P-type ions or the like. Still further, an active region (depletion layer) is formed on the photodiode PD by applying a gate potential.
<Floating Diffusion>
As depicted in
In the first embodiment, a case where two floating diffusions FD (first floating diffusion FDA and second floating diffusion FDB) are formed will be described.
Further, the floating diffusion FD accumulates electric charge transferred from the photodiode PD via the transfer gate TG and converts the charge into a voltage. That is, signal charge accumulated in the photodiode PD is transferred to the floating diffusion FD.
<Transfer Gate>
As depicted in
In the first embodiment, as an example, a case where the number of the transfer gates TG is four will be described as depicted in
Further, each transfer gate TG distributes and transfers the signal charge accumulated in the photodiode PD to plural floating diffusions FD according to drive signals supplied from a timing control unit (not depicted).
In the first embodiment, as depicted in
That is, in the first embodiment, at least two of the plural transfer gates TG transfer the signal charge accumulated in the photodiode PD to one floating diffusion FD.
Further, the plural transfer gates TG are arranged point-symmetrically with respect to an optical center OPC as depicted in
In the first embodiment, a case where the optical center OPC is set to one pixel formed by arranging plural unit pixels will be described.
Note that the optical center OPC is, for example, the center of the photodiode PD as seen from the incident direction of light. However, the present invention is not limited to this, and the optical center OPC may be set as the center of the on-chip lens 30, for example, as viewed from the incident direction of light.
Further, the four transfer gates TG are arranged at positions forming vertices of a quadrangle with respect to the optical center OPC as depicted in
<Overflow Gate>
Each of the plural overflow gates OFG discharges charge overflowing from the floating diffusion FD according to the drive signal supplied from the timing control unit (not depicted). Further, the overflow gate OFG is formed by using polysilicon, for example.
In the first embodiment, as an example, a case where the number of overflow gates OFG is four as depicted in
Therefore, in the first embodiment, the total number of the transfer gates TG and the overflow gates OFG is an even number. Further, in the first embodiment, the total number of the transfer gates TG and the total number of the overflow gates OFG are the same number.
Further, the plural overflow gates OFG are arranged point-symmetrically with respect to the optical center OPC at positions different from those of the transfer gates TG as depicted in
In the first embodiment, a case where the transfer gates TG and the overflow gates OFG are alternately arranged in a circle with the optical center OPC as the center of the circle when viewed from the incident direction of the light incident on the light receiving element 10, as depicted in
<Reset Transistor>
As depicted in
In the first embodiment, as an example, as depicted in
Further, each reset transistor RST turns on or off the discharge of the electric charge accumulated in the floating diffusion FD according to the drive signal supplied from the timing control unit.
Further, the plural reset transistors RST are arranged point-symmetrically with respect to the optical center OPC as depicted in
<Amplification Transistor>
As depicted in
In the first embodiment, as an example, a case where the number of the amplification transistors AMP is four as depicted in
Further, each amplification transistor AMP reads out a potential of the floating diffusion FD reset by the reset transistor RST as a reset level. Further, each amplification transistor AMP amplifies a voltage corresponding to the signal charge accumulated in the floating diffusion FD to which the signal charge is transferred by the transfer gate TG. That is, each amplification transistor AMP reads the signal charge transferred to the floating diffusion FD as an electric signal, and further amplifies the read electric signal.
The voltage (voltage signal) amplified by the amplification transistor AMP is output to a vertical signal line VSL via the selection transistor SEL. Incidentally, the vertical signal line VSL is a wiring line that outputs an electric signal amplified by the amplification transistor AMP. Further, a selection transistor SEL and an A/D converter (not depicted) are connected to the vertical signal line VSL.
Further, the plural amplification transistors AMP are arranged point-symmetrically with respect to the optical center OPC as depicted in
<Selection Transistor>
As depicted in
In the first embodiment, as an example, a case where the number of the selection transistors SEL is four as depicted in
Further, each selection transistor SEL turns on or off the output of the voltage signal from the amplification transistor AMP to the vertical signal line VSL according to the drive signal supplied from the timing control unit.
As a result, each selection transistor SEL becomes conductive by supply of a selection control signal, and selects a unit pixel in synchronization with vertical scanning by a vertical scanning circuit (not depicted).
Further, the plural selection transistors SEL are arranged point-symmetrically with respect to the optical center OPC as depicted in
Still further, as depicted in
<Operation Timing of Transfer Gate and Overflow Gate>
The timing at which each of the transfer gates TG and the overflow gate OFG operates according to the drive signal supplied from the timing control unit is regulated to be the timing depicted in
To be specific, the transfer gate TGA and the transfer gate TGB that transfer signal charge to the first floating diffusion FDA operate at the same timing. Similarly, the transfer gate TGC and the transfer gate TGD that transfer signal charge to the second floating diffusion FDB operate at the same timing.
Further, the operation performed at the same timing by the transfer gate TGA and the transfer gate TGB, and the operation performed at the same timing by the transfer gate TGC and the transfer gate TGD are opposite operations. That is, at the timing when the transfer gate TGA and the transfer gate TGB transfer the signal charge to the first floating diffusion FDA, the transfer gate TGC and the transfer gate TGD do not transfer the signal charge to the second floating diffusion FDB.
Still further, the timing at which the overflow gate OFG discharges the charge overflowing from the floating diffusion FD is different from the timing at which each transfer gate TG transfers the signal charge to the floating diffusion FD.
<Distance Measurement Process>
An outline of a distance measurement process by the ToF method will be described.
The ToF method is one of the methods for measuring the distance to an object or measuring the three-dimensional shape of the object. Further, the ToF method is a method of irradiating an object with light and analyzing reflected light to measure the distance (depth) to the object or the shape of the object.
Hereinafter, the outline of the distance (depth) measurement process by the ToF method will be described with reference to
In this configuration, the distance (depth) d from the light receiving element 10 to the object OBJ can be obtained by measuring time Δt until the light output from the light emitting unit 2 and reflected by the object OBJ is incident on the light receiving element 10.
The distance d is calculated using the following Equation 1. Incidentally, in Equation 1, “c” is the speed of light.
d=(½)×c×Δt (Equation 1)
It is to be noted that, in
However, in the configuration depicted in
This process will be described with reference to
Also
With this configuration, the time difference between the output pulsed light of the light emitting unit 2 and the input pulsed light of the light receiving element 10 is converted into a phase difference for observation.
The light emitting unit 2 is made to blink at a high speed at a known frequency fHz. That is, one cycle of a light emitting pattern of the light emitting unit 2 is 1/f second. The light receiving element 10 measures a phase of the blinking pattern of light for each pixel. A specific example of the configuration related to phase measurement for each pixel will be described later.
For example, assuming that the difference between the phase of the pulsed light output by the light emitting unit 2 and the phase of the pulsed light received by the light receiving element 10 is ϕ, the time Δt until the output light from the light emitting unit 2 is reflected by the object OBJ and incident on the light receiving element 10 can be calculated using the following (Equation 2).
Δt=(1/f)×(ϕ/2π) (Equation 2)
By substituting the time Δt calculated by (Equation 2) into (Equation 1), the distance d from the light receiving element 10 (or the light emitting unit 2) to the object OBJ can be calculated using the following (Equation 3). Incidentally, in (Equation 3), “c” is the speed of light, “ϕ” is the difference between the phase of the output pulsed light of the light emitting unit 2 and the phase of the received pulsed light of the light receiving element 10, and “f” is the frequency of the pulsed light.
d=(cϕ)/4πf (Equation 3)
With reference to
The light receiving element 10 described with reference to
In the case of measuring the distance of an object using a ToF camera, the ON/OFF execution timings are sequentially switched to analyze the accumulated charge at each timing. The switching patterns of the ON/OFF execution timing are the following four types depicted in the left figure in
(c1) The phase of 0 degrees is set so that the ON timing (light receiving timing) is the phase of the pulsed light output by the light emitting unit 2, that is, the same phase as (a) light emitting pattern depicted in the left figure of
(c2) The phase of 90 degrees is set so that the ON timing (light receiving timing) is 90 degrees behind the pulsed light output by the light emitting unit 2 ((a) light emitting pattern).
(c3) The phase of 180 degrees is set so that the ON timing (light receiving timing) is 180 degrees behind the pulsed light output by the light emitting unit 2 ((a) light emitting pattern).
(c4) The phase of 270 degrees is set so that the ON timing (light receiving timing) is 270 degrees behind the pulsed light output by the light emitting unit 2 ((a) light emitting pattern).
In the light receiving element 10, these four types of switching are sequentially executed, and the light receiving amounts while the light receiving timing is varied are acquired. That is, four types of light-receiving amounts of the different accumulation phases and charges corresponding to the light-receiving amounts are obtained.
For example, it is assumed that the charges accumulated when the phase difference of the light receiving pixel with respect to the light emitting pattern is 0, 90, 180, and 270 degrees are set to Q0, Q90, Q180, and Q270, respectively.
Here, the phase difference ϕ required to calculate the distance d to the object by applying (Equation 3) is the difference between the phase of the output pulsed light of the light emitting unit 2 and the phase of the received pulsed light of the light receiving element 10.
This phase difference ϕ can be calculated based on the following (Equation 4).
ϕ=Arctan((Q90−Q270)/(Q180−Q0)) (Equation 4)
By substituting the phase difference ϕ calculated by (Equation 4), namely, the difference ϕ between the phase of the output pulsed light of the light emitting unit 2 and the phase of the received pulsed light of the light receiving element 10 into (Equation 3), the distance d from the light receiving element 10 (or the light emitting unit 2) to the object OBJ can be calculated.
It should be noted that, in the present disclosure, as depicted in
The captured images with each phase setting of the amount of phase shift (0, 90 degrees, 180 degrees, and 270 degrees) from the light emitting pattern (pulse) are sequentially and repeatedly captured.
A set of a combination of components with phase settings of 0 degrees, 90 degrees, 180 degrees, and 270 degrees is called a frame.
That is, one frame has the accumulated charge information Q0, Q90, Q180, and Q270 of the captured image set to each phase of 0 degrees, 90 degrees, 180 degrees, and 270 degrees of the phase shift from the light emitting pattern (pulse).
Incidentally, in general, the time between respective components is set shorter than the time between frames.
Next, an outline of a process executed by a ranging device of the present disclosure will be described.
As described with reference to
In order to accurately detect this phase difference, it is necessary to recognize the ON/OFF timing of the light emission pulse of the light source and the ON/OFF timing of the pixel executed in the camera.
For this purpose, for example, it is sufficient if the ON/OFF timing of the light emission pulse of the light source and the ON/OFF timing of the pixels executed in the camera are controlled based on one clock, that is, the operations are executed in synchronization with each other.
<Photoelectric Conversion Rate>
It has been demonstrated that the light receiving element 10 of the first embodiment has a high photoelectric conversion rate particularly for light having a low wavelength even if the thickness of the silicon oxide film is increased.
<Action/Effect of the First Embodiment>
The light receiving element 10 of the first embodiment can exert the following actions and effects.
(1) Plural transfer gates TG which distribute and transfer, to the plural floating diffusions FD, signal charge accumulated in the photodiode PD that photoelectrically converts incident light are provided. In addition to this matter, at least two of the plural transfer gates TG are arranged point-symmetrically with respect to the optical center OPC when viewed from the incident direction of light.
This makes it possible to provide a light receiving element 10 capable of uniformly reducing parasitic light sensitivity.
(2) The number of the transfer gates TG is four, and the four transfer gates TG are arranged at positions that form the vertices of a quadrangle with respect to the optical center OPC when viewed from the incident direction of light.
This makes it easy to secure the distance from the optical center OPC to the floating diffusion FD, and an increase in parasitic light sensitivity can be suppressed.
(3) Plural overflow gates OFG for discharging the charge overflowing from the floating diffusion FD are further provided. In addition to this matter, at least two of the plural overflow gates OFG are arranged point-symmetrically with respect to the optical center OPC when viewed from the incident direction of light.
This makes it possible to provide the light receiving element 10 capable of improving robustness against transfer failure when distributing the charge to each transfer gate TG at a high speed even in the case of misalignment of masks.
That is, the gate type indirect ToF sensor obtains plural phase signals by distributing the electric charge generated by the photodiode PD to the plural floating diffusions FD by the plural transfer gates TG. Further, since ranging is performed using plural phase signals, it is necessary to distribute charge to each transfer gate TG at a high speed, and high robustness against transfer failure is required. Therefore, in the case where the masks are misaligned, there is a problem that the robustness against transfer failure is lowered. In response, in the light receiving element 10 of the first embodiment, at least two of the plural overflow gates OFG are arranged point-symmetrically with respect to the optical center OPC when viewed from the incident direction of the light, and therefore, the above problem can be solved.
Further, since at least two of the plural overflow gates OFG are arranged point-symmetrically with respect to the optical center OPC, in-plane uniformity can be held even in the case where light is reflected by plural transistors.
Further, as compared with a configuration in which the overflow gate OFG is arranged at the optical center OPC, a transfer path for transferring the signal charge to the floating diffusion FD can be configured so as to avoid being divided.
(4) The total number of the transfer gates TG and the overflow gates OFG is an even number.
This makes it possible to suppress the decrease in charge separation efficiency (Cmod) due to process deviation. Further, it becomes easy to maintain point symmetry with respect to the optical center OPC for the plural transfer gates TG and overflow gates OFG.
(5) The total number of the transfer gates TG and the total number of overflow gates OFG are the same.
This makes it possible to suppress complexity of manufacturing professional wrestling.
(6) The optical center OPC is set to one pixel formed by arranging plural unit pixels.
This makes it possible to apply a structure in which the transfer gates TG or the like are arranged point-symmetrically with respect to the optical center OPC when viewed from the incident direction of light for one light receiving element 10, and it becomes possible to reduce the parasitic light sensitivity uniformly.
(7) Plural amplification transistors AMP that read out and amplify signal charge transferred to the floating diffusion FD as an electric signal are further provided. In addition to this, at least two of the plural amplification transistors AMP are arranged point-symmetrically with respect to the optical center OPC when viewed from the incident direction of light.
Due to this, the configuration of the light receiving element 10 can be made highly symmetric, and the quality can be made uniform.
(8) Plural selection transistors SEL for turning on or off the output of the voltage signal from the amplification transistor AMP are further provided. In addition to this matter, at least two of the plural selection transistors SEL are arranged point-symmetrically with respect to the optical center OPC when viewed from the incident direction of light.
As a result, the configuration of the light receiving element 10 can be made highly symmetric, and the quality can be made uniform.
(9) Plural reset transistors RST for turning on or off the discharge of electric charge accumulated in the floating diffusion ED are further provided. In addition to this, at least two of the plural reset transistors RST are arranged point-symmetrically with respect to the optical center OPC when viewed from the incident direction of light.
Due to this, the configuration of the light receiving element 10 can be made highly symmetric, and the quality can be made uniform.
(10) A light-shielding film 20 that carries out light shielding in such a manner that the range of the light incident on the photodiode PD is a preset range is further provided.
As a result, the light reflected by the object and incident on the light receiving element 10 can be allowed to efficiently enter the photodiode PD.
(11) The first semiconductor layer 10A has plural transfer gates TG and plural overflow gates OFG. In addition to this, the second semiconductor layer 10B stacked on the first semiconductor layer 10A in the incident direction of light has plural amplification transistors AMP, plural reset transistors RST, and plural selection transistors SEL.
This makes it possible for the light receiving element 10 having a stacked configuration to uniformly reduce the parasitic light sensitivity. In addition, the configuration of the light receiving element 10 can be diversified.
(12) At least two of the plural transfer gates TG transfer signal charge accumulated in the photodiode PD to one floating diffusion FD.
Due to this, even in the case where a transfer failure of one transfer gate TG occurs, if no transfer failure occurs in the remaining transfer gates TG, as a result, the failure of transfer to one floating diffusion FD can be prevented. Accordingly, even in the case where there is a difference (transfer difference) in the transfer capability (transfer capacity, transfer speed, or the like) of the plural transfer gates TG to one floating diffusion FD, an uttered transfer difference can be canceled.
Further, the configuration of the light receiving element 10 can be made to increase the number of mounted HADs (Hole-Accumulation Diode (registered trademark)), for example, so that the variation in which the HAD is applied can be increased.
(13) An on-chip lens 30 arranged on the side of the photodiode PD where the light is incident thereon is provided.
This makes it possible to suppress variability in sensitivity and color mixing of each color that occur depending on an F value of the on-chip lens 30. This is because, in the light receiving element 10 of the back-illuminated type, the distance between the on-chip lens 30 and a light-receiving surface of the photodiode PD becomes short.
The ranging module 1 of the first embodiment can exert the following actions and effects.
(14) The light receiving element 10, the light emitting unit 2 that emits irradiation light whose brightness fluctuates periodically, and the light emission control unit 4 that controls irradiation timing of the irradiation light are provided.
This makes it possible to provide a ranging module 1 capable of uniformly reducing the parasitic light sensitivity.
(1) In the first embodiment, the light receiving element 10 is configured to have plural overflow gates OFG arranged point-symmetrically with respect to the optical center OPC. However, the present invention is not limited to this, and for example, as depicted in
With this configuration, it is possible to improve process variation resistance with respect to the light receiving element 10.
(2) In the first embodiment, the total number of the transfer gates TG and the total number of the overflow gates OFG are the same, but the number is not limited to this, and for example, as depicted in
(3) In the first embodiment, at least two of the plural transfer gates TG are configured to transfer signal charge accumulated in the photodiode PD to one floating diffusion FD. However, the present invention is not limited to this, and for example, as depicted in
With this configuration, a configuration in which the number of floating diffusions FD has been increased can be supported.
(4) In the first embodiment, a configuration is employed in which the first semiconductor layer 10A has transfer gates TG and overflow gates OFG, and the second semiconductor layer 10B has amplification transistors AMP, reset transistors RST, and selection transistors SEL. However, the present invention is not limited to this. That is, for example, as depicted in
(5) In the first embodiment, the light receiving element 10 is configured not to have a memory for storing signal charge, but the configuration is not limited to this. That is, for example, as depicted in
(6) In the first embodiment, the second semiconductor layer 10B is configured not to have a memory for storing signal charge, but the configuration is not limited to this. That is, for example, as depicted in
(7) In the first embodiment, the light receiving element 10 is configured to have the first semiconductor layer 10A and the second semiconductor layer 10B. However, the present invention is not limited to this, and the light receiving element 10 may be an indirect ToF sensor of the embedded gate type having only one semiconductor layer.
(8) In the first embodiment, the configuration of the light receiving element 10 includes the first semiconductor layer 10A and the second semiconductor layer 10B. However, the configuration is not limited to this, and for example, as depicted in
(9) In the first embodiment, the number of the amplification transistors AMP and the number of the amplification transistors AMP are four, but the number is not limited to this, and for example, as depicted in
(10) In the first embodiment, the transfer gates TG and the overflow gates OFG are arranged alternately in a circle centered on the optical center OPC when viewed from the incident direction of the light incident on the light receiving element 10, but the arrangement is not limited to this. That is, for example, as depicted in
Here, in the configuration depicted in
Further, in the configuration depicted in
(11) In the first embodiment, the optical center OPC is set to one pixel formed by arranging plural unit pixels, but the present invention is not limited to this, and the optical center OPC may be set in a pixel group formed by arranging plural pixels.
That is, for example, as depicted in
With this configuration, the variation can be increased regarding the configuration of the light receiving element 10.
(12) In the first embodiment, as depicted in
That is, for example, a configuration in which grounds GND are arranged in the first semiconductor layer 10A, and grounds GND and power supply wiring lines VDD are arranged in the second semiconductor layer 10B, as depicted in
As depicted in
As depicted in
Then, as depicted in
With this configuration, the two adjacent pixels PX share the ground GND arranged in the first semiconductor layer 10A, so that miniaturization can be easily achieved. Further, by sharing the ground GND and the power supply wiring line VDD arranged in the second semiconductor layer 10B, miniaturization can be easily achieved.
Further, for example, as depicted in
As depicted in
Then, as depicted in
With this configuration, by arranging the ground GND closer to the photodiode PD than an edge of the first semiconductor layer 10A is, the degree of fixation of the ground GND to the first semiconductor layer 10A can be strengthened, and variations that occur in the transfer of electrons can be suppressed. This makes it possible to improve the AC contrast (Cmod) and suppress variations in the AC contrast for each pixel. It should be noted that the “AC contrast” is an index obtained by expressing, as a rate, the accuracy of distributing the electric charge generated by photoelectric conversion to a predetermined floating diffusion FD when the charge is distributed to the plural floating diffusions FD by a modulation drive such as a gate voltage. In addition, as the “AC contrast” is higher, the index becomes better. Note that, as the “Modulation Frequency” corresponding to the modulation frequency of the AC contrast is earlier, more accurate distance measurement becomes possible.
Further, with this configuration, the power supply wiring line VDD arranged in the first semiconductor layer 10A is shared by the two adjacent pixels PX, so that miniaturization can be easily achieved.
Further, for example, as depicted in
As depicted in
Then, as depicted in
With this configuration, in two adjacent pixels PX, the ground GND and the power supply wiring line VDD arranged in the first semiconductor layer 10A are shared, so that miniaturization can be easily achieved.
(13) In the first embodiment, as depicted in
That is, for example, as depicted in
The scattering structure SF is formed by using, for example, a metal material (Metal), a silicon oxide film (SiO2), or the like, and is arranged inside the antireflection layer 40. Further, as depicted in
With this configuration, the scattering structure SF is arranged point-symmetrically with respect to the optical center such that the light scattered by the scattering structure SF is not biased to a specific transfer gate TG inside the pixel, and thus the bias in sensitivity is suppressed, and the AC contrast can be improved. This makes it possible to improve the sensitivity to the infrared light source, which is the sensitivity emphasized in the indirect ToF.
Incidentally, on a high image height side, which is a side of pixel that is far from an optical axis on the surface of the on-chip lens 30, the light is obliquely incident because the distance from the optical axis is long. Therefore, it is not necessary to arrange the scattering structure SF point-symmetrically with respect to the optical center. Further, the “high image height side” indicates a side on which an image height increases as the location of the image approaches an end of the on-chip lens 30 from the pixel center, which is a portion where diagonal lines of the on-chip lens 30 intersect with each other. Furthermore, the “high image height” refers to sides near the end of the on-chip lens 30 (including any of the upper side, lower side, left side, and right side).
It is to be noted that the configuration of the scattering structure SF is not limited to that depicted in
Besides, the shape of the scattering structure SF is not limited to the configuration depicted in
That is, as depicted in
Incidentally, in the case where the shape of the scattering structure SF is the shape depicted in
(14) In the first embodiment, the overflow gate OFG is connected to the transfer gate TG, but the present invention is not limited to this.
That is, for example, as depicted in
Further, in the configurations depicted in
The conversion efficiency variable gates FDG (polysilicon) are arranged at positions corresponding to optical symmetry and capacitive symmetry, and are connected to the reset transistors RST. Further, the conversion efficiency variable gates FDG function as switches for loading an additional capacitance.
Incidentally, although not depicted, a dummy element may be arranged instead of the conversion efficiency variable gate FDG.
In the configuration depicted in
That is, by applying an electric field design in which the charges EC are discharged to the overflow gate OFG with the transfer gates TG in the OFF state, the function equivalent to that of the overflow gate OFG that requires the timing control unit can be achieved without the need for the timing control unit.
With this configuration, the overflow gate OFG, which is a configuration required for indirect ToF, can be easily miniaturized by reducing occupancy of the area inside the pixel while maintaining the symmetry with respect to the optical center OPC.
Further, for example, as depicted in
Here, the transfer electrode VG is formed by using a vertical type transistor to have a configuration in which a gate electrode (polysilicon) is extended inside a silicon substrate, and connects the transfer gate TG and the photodiode PD. Further, the transfer electrode VG is an electrode created by embedding polysilicon in an excavated portion of a silicon substrate, and for example, two parts which are a part formed in a portion where a silicon substrate is excavated and a part above the silicon substrate are integrally formed. That is, the transfer electrode VG forms an embedded type gate.
In the configuration depicted in
With this configuration, it is possible to improve the transfer efficiency of charges EC.
(15) In the first embodiment, the overflow gate OFG is connected to the transfer gate TG, but the present invention is not limited to this.
That is, for example, as depicted in
The photo gate PG is connected to the photodiode PD, and is turned on or off according to a control signal supplied from a drive circuit (not depicted).
In the configuration depicted in
On the other hand, the charges EC are discharged to the overflow gate OFG, as depicted in
That is, by applying an electric field design in which the charges EC are discharged to the overflow gate OFG with the transfer gates TG in the OFF state, the function equivalent to that of the overflow gate OFG that requires the timing control unit can be achieved without the need for the timing control unit.
With this configuration, the overflow gate OFG, which is a configuration required for indirect ToF, can be easily miniaturized by reducing the occupancy of the area inside the pixel while maintaining the symmetry with respect to the optical center OPC.
Further, for example, as depicted in
The transfer electrode VG connects the photo gate PG and the photodiode PD.
In the configuration depicted in
With this configuration, it is possible to improve the transfer efficiency of charges EC.
(16) In the first embodiment, as depicted in
That is, for example, as depicted in
In the configuration depicted in
To be specific, the same operations are performed at shifted timings in the order of the transfer gate TGA, the transfer gate TGC, the transfer gate TGB, and the transfer gate TGD. Further, the timing at which the overflow gate OFG discharges charge overflowing from the floating diffusion FD is different from the timing at which each transfer gate TG transfers the signal charge to the floating diffusion FD.
Further, for example, in the case of the configuration depicted in
In the configuration depicted in
Further, for example, in the case of the configuration depicted in
In the configuration depicted in
(17) In the first embodiment, the configuration of the first semiconductor layer 10A is one having the photodiode PD, the floating diffusion FD, the transfer gate TG, and the overflow gate OFG, but the configuration is not limited thereto.
That is, for example, as depicted in
The photo gate PG is connected to the transfer gate TG.
Further, the four photo gates PG are arranged in a bilaterally symmetric manner and a vertically symmetric manner with respect to one transfer gate TG (for example, transfer gate TGA).
The transfer electrode VG connects the transfer gate TG and the photodiode PD.
As depicted in
The upper electrode UE is formed by using a metal material, and has a shape made by bending a flat plate plural times at an angle of approximately 90° when viewed from the direction in which plural unit pixels are arranged, so as to have plural projections and recesses. Further, an upper terminal UT formed linearly using copper is connected to the upper electrode UE.
The lower electrode DE is formed by using a metal material similarly to the upper electrode UE, and is formed in the same shape as the upper electrode UE. Further, a lower terminal DT formed in a plate shape using copper is connected to the lower electrode DE.
The high-dielectric-constant film PM is formed by using an insulator, and is arranged between the upper electrode UE and the lower electrode DE.
In the configuration depicted in
Further, in the configuration depicted in
It is to be noted that, as depicted in
Further, for example, as depicted in
It is to be noted that, instead of the configuration depicted in
Even in the configurations depicted in
Further, the configuration of the photo gate PG is not limited to the configuration in which the photo gate PG is completely arranged inside the first semiconductor layer 10A as depicted in
That is, for example, as depicted in
The vertical photo gate VPG is formed in a shape extending vertically from the first semiconductor layer 10A and embedded in the photodiode PD.
In the configuration depicted in
(18) In the first embodiment, the configuration of the light receiving element 10 is one having one on-chip lens 30 as depicted in
In the configuration including one on-chip lens 30, as depicted in
On the other hand, in contrast to the configuration including one on-chip lens 30, for example, as depicted in
In the configuration depicted in
Further, by making the on-chip lens 30 small as compared with the configuration having one on-chip lens 30, it is possible to increase a curvature of the on-chip lens 30, and to form an image of the collected light on a shallow side from the light incident surface. This makes it possible to reduce components of light that passes through the overflow gate OFG.
Incidentally, although not depicted, the scattering structure SF as depicted in
The technology related to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be achieved as a device mounted on a moving body of any type of automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility, airplanes, drones, ships, robots, and the like.
The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. In the example depicted in
The driving system control unit 12010 controls the operation of devices related to the driving system of the vehicle in accordance with various kinds of programs. For example, the driving system control unit 12010 functions as a control device for a driving force generating device for generating the driving force of the vehicle, such as an internal combustion engine, a driving motor, or the like, a driving force transmitting mechanism for transmitting the driving force to wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating the braking force of the vehicle, and the like.
The body system control unit 12020 controls the operation of various kinds of devices provided to a vehicle body in accordance with various kinds of programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various kinds of lamps such as a headlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or the like. In this case, radio waves transmitted from a mobile device as an alternative to a key or signals of various kinds of switches can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals, and controls a door lock device, the power window device, the lamps, or the like of the vehicle.
The outside-vehicle information detecting unit 12030 detects information about the outside of the vehicle including the vehicle control system 12000. For example, the outside-vehicle information detecting unit 12030 is connected with an imaging section 12031. The outside-vehicle information detecting unit 12030 makes the imaging section 12031 image an image of the outside of the vehicle, and receives the imaged image. On the basis of the received image, the outside-vehicle information detecting unit 12030 may perform processing of detecting an object such as a human, a vehicle, an obstacle, a sign, a character on a road surface, or the like, or processing of detecting a distance thereto.
The imaging section 12031 is an optical sensor that receives light, and which outputs an electric signal corresponding to a received light amount of the light. The imaging section 12031 can output the electric signal as an image, or can output the electric signal as information about a measured distance. In addition, the light received by the imaging section 12031 may be visible light, or may be invisible light such as infrared rays or the like.
The in-vehicle information detecting unit 12040 detects information about the inside of the vehicle. The in-vehicle information detecting unit 12040 is, for example, connected with a driver state detecting section 12041 that detects the state of a driver. The driver state detecting section 12041, for example, includes a camera that images the driver. On the basis of detection information input from the driver state detecting section 12041, the in-vehicle information detecting unit 12040 may calculate a degree of fatigue of the driver or a degree of concentration of the driver, or may determine whether the driver is dozing.
The microcomputer 12051 can calculate a control target value for the driving force generating device, the steering mechanism, or the braking device on the basis of the information about the inside or outside of the vehicle which information is obtained by the outside-vehicle information detecting unit 12030 or the in-vehicle information detecting unit 12040, and output a control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control intended to implement functions of an advanced driver assistance system (ADAS) which functions include collision avoidance or shock mitigation for the vehicle, following driving based on a following distance, vehicle speed maintaining driving, a warning of collision of the vehicle, a warning of deviation of the vehicle from a lane, or the like.
In addition, the microcomputer 12051 can perform cooperative control intended for automatic driving, which makes the vehicle to travel autonomously without depending on the operation of the driver, or the like, by controlling the driving force generating device, the steering mechanism, the braking device, or the like on the basis of the information about the outside or inside of the vehicle which information is obtained by the outside-vehicle information detecting unit 12030 or the in-vehicle information detecting unit 12040.
In addition, the microcomputer 12051 can output a control command to the body system control unit 12020 on the basis of the information about the outside of the vehicle which information is obtained by the outside-vehicle information detecting unit 12030. For example, the microcomputer 12051 can perform cooperative control intended to prevent a glare by controlling the headlamp so as to change from a high beam to a low beam, for example, in accordance with the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detecting unit 12030.
The sound/image output section 12052 transmits an output signal of at least one of a sound and an image to an output device capable of visually or auditorily notifying information to an occupant of the vehicle or the outside of the vehicle. In the example of
In
The imaging sections 12101, 12102, 12103, 12104, and 12105 are, for example, disposed at positions on a front nose, sideview mirrors, a rear bumper, and a back door of the vehicle 12100 as well as a position on an upper portion of a windshield within the interior of the vehicle. The imaging section 12101 provided to the front nose and the imaging section 12105 provided to the upper portion of the windshield within the interior of the vehicle obtain mainly an image of the front of the vehicle 12100. The imaging sections 12102 and 12103 provided to the sideview mirrors obtain mainly an image of the sides of the vehicle 12100. The imaging section 12104 provided to the rear bumper or the back door obtains mainly an image of the rear of the vehicle 12100. The imaging section 12105 provided to the upper portion of the windshield within the interior of the vehicle is used mainly to detect a preceding vehicle, a pedestrian, an obstacle, a signal, a traffic sign, a lane, or the like.
Incidentally,
At least one of the imaging sections 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging sections 12101 to 12104 may be a stereo camera constituted of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.
For example, the microcomputer 12051 can determine a distance to each three-dimensional object within the imaging ranges 12111 to 12114 and a temporal change in the distance (relative speed with respect to the vehicle 12100) on the basis of the distance information obtained from the imaging sections 12101 to 12104, and thereby extract, as a preceding vehicle, a nearest three-dimensional object in particular that is present on a traveling path of the vehicle 12100 and which travels in substantially the same direction as the vehicle 12100 at a predetermined speed (for example, equal to or more than 0 km/hour). Further, the microcomputer 12051 can set a following distance to be maintained in front of a preceding vehicle in advance, and perform automatic brake control (including following stop control), automatic acceleration control (including following start control), or the like. It is thus possible to perform cooperative control intended for automatic driving that makes the vehicle travel autonomously without depending on the operation of the driver or the like.
For example, the microcomputer 12051 can classify three-dimensional object data on three-dimensional objects into three-dimensional object data of a two-wheeled vehicle, a standard-sized vehicle, a large-sized vehicle, a pedestrian, a utility pole, and other three-dimensional objects on the basis of the distance information obtained from the imaging sections 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data for automatic avoidance of an obstacle. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can recognize visually and obstacles that are difficult for the driver of the vehicle 12100 to recognize visually. Then, the microcomputer 12051 determines a collision risk indicating a risk of collision with each obstacle. In a situation in which the collision risk is equal to or higher than a set value and there is thus a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display section 12062, and performs forced deceleration or avoidance steering via the driving system control unit 12010. The microcomputer 12051 can thereby assist in driving to avoid collision.
At least one of the imaging sections 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 can, for example, recognize a pedestrian by determining whether or not there is a pedestrian in imaged images of the imaging sections 12101 to 12104. Such recognition of a pedestrian is, for example, performed by a procedure of extracting characteristic points in the imaged images of the imaging sections 12101 to 12104 as infrared cameras and a procedure of determining whether or not it is the pedestrian by performing pattern matching processing on a series of characteristic points representing the contour of the object. When the microcomputer 12051 determines that there is a pedestrian in the imaged images of the imaging sections 12101 to 12104, and thus recognizes the pedestrian, the sound/image output section 12052 controls the display section 12062 so that a square contour line for emphasis is displayed so as to be superimposed on the recognized pedestrian. The sound/image output section 12052 may also control the display section 12062 so that an icon or the like representing the pedestrian is displayed at a desired position.
As described above, embodiments of the present technology have been described, but the statements and drawings that form part of this disclosure should not be understood to limit the present technology. This disclosure will reveal to those skilled in the art various alternative embodiments, examples, and operational technologies.
In addition, it goes without saying that the present technology includes various embodiments and the like not described here, such as a configuration in which each configuration described in the above embodiments is applied in a desired manner. Therefore, the technical scope of the present technology is defined only by the matters specifying the invention relating to the reasonable scope of the claims from the above description.
Further, a semiconductor device of the present disclosure does not need to include all of the components described in the above-described embodiments and the like, and may conversely include other components.
It is to be noted that the effects described in the present specification are merely examples and effects of the disclosure are not limited to these, and other effects may be obtained.
It should be noted that the present technology can have the following configurations.
(1)
A light receiving element including:
plural transfer gates that distribute and transfer, to plural floating diffusions, signal charge accumulated in a photodiode that photoelectrically converts incident light, in which
at least two of the plural transfer gates are arranged point-symmetrically with respect to an optical center when viewed from an incident direction of the light.
(2)
The light receiving element described in the above item (1), in which
the number of transfer gates is four, and
the four transfer gates are arranged at positions forming vertices of a quadrangle with respect to the optical center when viewed from the incident direction of the light.
(3)
The light receiving element described in the above item (1) or (2), further including:
an overflow gate that discharges charge overflowing from the floating diffusions, in which
the overflow gate is arranged at the optical center when viewed from the incident direction of the light.
(4)
The light receiving element described in the above item (1) or (2), further including:
plural overflow gates that discharge charge overflowing from the floating diffusions, in which
at least two of the plural overflow gates are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(5)
The light receiving element described in the above item (4), in which the total number of the transfer gates and the overflow gates is an even number.
(6)
The light receiving element described in the above item (4) or (5), in which the total number of transfer gates and the total number of overflow gates are identical.
(7)
The light receiving element described in any one of the above items (1) to (6), in which the optical center is set to one pixel formed by arranging plural unit pixels.
(8)
The light receiving element described in any one of the above items (1) to (6), in which the optical center is set to a pixel group formed by arranging plural pixels.
(9)
The light receiving element described in any one of the above items (1) to (8), further including:
plural amplification transistors that read out and amplify the signal charge transferred to the floating diffusions as an electric signal, in which
at least two of the plural amplification transistors are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(10)
The light receiving element described in any one of the above items (1) to (9), further including:
plural amplification transistors that read out and amplify the signal charge transferred to the floating diffusions as an electric signal; and
plural selection transistors that turn on or off an output of a voltage signal from the amplification transistors, in which
at least two of the plural selection transistors are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(11)
The light receiving element described in any one of the above items (1) to (10), further including:
plural reset transistors that turn on or off a discharge of charge accumulated in the floating diffusions, in which
at least two of the plural reset transistors are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(12)
The light receiving element described in any one of the above items (1) to (11), further including:
plural memories that store the signal charge, in which
at least two of the plural memories are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(13)
The light receiving element described in any one of the above items (1) to (12), further including:
a light-shielding film that performs shielding in such a manner that a range of light incident on the photodiode is a preset range.
(14)
A light receiving element including:
a first semiconductor layer having
a second semiconductor layer having
the first semiconductor layer and the second semiconductor layer are stacked in the incident direction of the light,
at least two of the plural transfer gates are arranged point-symmetrically with respect to an optical center when viewed from the incident direction of the light,
at least two of the plural overflow gates are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light,
at least two of the plural amplification transistors are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light,
at least two of the plural reset transistors are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light, and
at least two of the plural selection transistors are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(15)
The light receiving element described in the above item (14), in which
the second semiconductor layer further has plural memories for storing the signal charge, and
at least two of the plural memories are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(16)
The light receiving element described in the above item (14) or (15), further including:
a third semiconductor layer stacked on the first semiconductor layer and the second semiconductor layer in the incident direction of the light at a position farther than the second semiconductor layer from the first semiconductor layer, in which
the third semiconductor layer includes
at least two of the plural amplification transistors of the third semiconductor layer are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light, and
at least two of the plural reset transistors of the third semiconductor layer are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(17)
The light receiving element described in any one of the above items (1) to (16), in which at least two of the plural transfer gates transfer the accumulated signal charge to one of the floating diffusions.
(18)
The light receiving element described in any one of the above items (1) to (17), in which one of the plural transfer gates transfers the accumulated signal charge to one of the floating diffusions.
(19)
The light receiving element described in any one of the above items (1) to (18), including:
an on-chip lens arranged on a side of the photodiode on which the light is incident on the photodiode.
(20)
The light receiving element described in any one of the above items (1) to (19), including:
an on-chip lens arranged on the side of the photodiode on which the light is incident on the photodiode; and
a scattering structure that scatters light condensed by the on-chip lens, in which
light scattered by the scattering structure is incident on the photodiode.
(21)
The light receiving element described in the above item (20), in which the scattering structure has a shape in which an area of a cross section decreases as the section becomes closer to the photodiode.
(22)
The light receiving element described in the above item (20), in which the scattering structure has a shape in which an area of a cross section decreases as the section becomes farther from the photodiode.
(23)
The light receiving element described in any one of the above items (1) to (22), in which a configuration included in one pixel is arranged in at least one of a bilaterally symmetric manner and a vertically symmetric manner with respect to one pixel which is the smallest unit.
(24)
The light receiving element described in any one of the above items (1) to (23), including:
plural grounds, in which
at least two of the plural grounds are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(25)
The light receiving element described in any one of the above items (1) to (24), including:
plural power supply wiring lines, in which
at least two of the plural power supply wiring lines are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(26)
The light receiving element described in any one of the above items (1) to (25), including:
plural power supply wiring lines, in which
at least two of the plural power supply wiring lines are arranged point-symmetrically with respect to the optical center when viewed from the incident direction of the light.
(27)
The light receiving element described in any one of the above items (1) to (26), further including:
an overflow gate that discharges charge overflowing from the floating diffusions; and
a ground, in which
the overflow gate is connected to the ground GND.
(28)
The light receiving element described in any one of the above items (1) to (27), further including: a transfer electrode that connects the transfer gates and the photodiode.
(29)
The light receiving element described in any one of the above items (1) to (28), further including:
an overflow gate that discharges charge overflowing from the floating diffusions; and
a photo gate connected to the photodiode, in which
the overflow gate is connected to the photo gate PG.
(30)
The light receiving element described in the above item (29), further including:
a transfer electrode that connects the photo gate and the photodiode.
(31)
The light receiving element described in any one of the above items (1) to (30), in which the plural transfer gates are connected to the single photodiode.
(32)
The light receiving element described in any one of the above items (1) to (30), further including:
plural photo gates connected to the photodiode, in which
the plural photo gates are connected to the single photodiode.
(33)
The light receiving element described in any one of the above items (1) to (32), further including:
plural photo gates connected to the photodiode, in which
the plural photo gates are arranged in a bilaterally symmetric manner and a vertically symmetric manner with respect to one of the transfer gates when viewed from the incident direction of the light.
(34)
The light receiving element described in any one of the above items (1) to (33), further including:
a first semiconductor layer having
a second semiconductor layer having
a capacitor a part of which is arranged in the first semiconductor layer and the remaining part of which is arranged in the second semiconductor layer, in which
the first semiconductor layer and the second semiconductor layer are stacked in the incident direction of the light, and
the capacitor is formed by sandwiching a high-dielectric-constant film between two electrodes and has a structure made by folding back a flat plate three-dimensionally.
(35)
The light receiving element described in any one of the above items (1) to (34), further including:
plural on-chip lenses arranged on the side of the photodiode on which the light is incident on the photodiode, in which
the number of the plural on-chip lenses is the same as that of the plural transfer gates.
(36)
A ranging module including:
the light receiving element described in any one of the above items (1) to (35);
a light emitting unit that emits irradiation light whose brightness changes periodically; and
a light emission control unit that controls irradiation timing of the irradiation light.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2019-209174 | Nov 2019 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2020/043269 | 11/19/2020 | WO |
