Claims
- 1. An electrophotographic light-receiving member comprising a conductive substrate and a light receiving layer consisting essentially of a photoconductive layer and a surface layer which are successively layered on said conductive substrate, wherein:
- said photoconductive layer comprises a non-monocrystalline material containing silicon atoms as a matrix and containing at least carbon atoms, hydrogen atoms and fluorine atoms;
- said surface layer comprises a non-monocrystalline material comprising silicon atoms, carbon atoms, hydrogen atoms and halogen atoms;
- said carbon atoms in said photoconductive layer are in a non-uniform content in the layer thickness direction, wherein the concentration of said carbon atoms gradually and continuously decreases from the side of the conductive substrate to the side of the surface layer; and said carbon atoms are present in amounts from 0.5 atomic % to 50 atomic % at a lower region of the photoconductive layer on the side of the conductive substrate and are present at substantially 0% at an upper layer region of said photoconductive layer on the side of the said surface layer;
- said fluorine atoms in said photoconductive layer are present in amounts not more than 95 atomic ppm and are non-uniformly distributed in the layer thickness direction; and
- said hydrogen atoms in said photoconductive layer are present in amounts from 1 to 40 atomic %.
- 2. The electrophotographic light-receiving member according to claim 1, wherein said surface layer further contains an oxygen atom and a nitrogen atom.
- 3. The electrophotographic light-receiving member according to claim 2, wherein the total content of the carbon atom, oxygen atom and nitrogen atom in said surface layer is in the range of from 40 atomic % to 90 atomic % based on the total content of the silicon atom, carbon atom, oxygen atom and nitrogen atom in said surface layer.
- 4. The electrophotographic light-receiving member according to claim 2, wherein at least one of said carbon atom, oxygen atom, nitrogen atom and halogen atom in said surface layer is in a non-uniform content in the layer thickness direction.
- 5. The electrophotographic light-receiving member according to claim 1, wherein said surface layer contains an element belonging to Group III of the periodic table, and at least one of an oxygen atom and a nitrogen atom.
- 6. The electrophotographic light-receiving member according to claim 5, wherein at least one of said carbon atom, oxygen atom, nitrogen atom, halogen atom and element belonging to Group III of the periodic table in said surface layer is in a non-uniform content in the layer thickness direction.
- 7. The electrophotographic light-receiving member according to claim 5, wherein said carbon atom in said surface layer is in a content of from 63 atomic % to 90 atomic % at, its outermost surface, based on the total content of the silicon atom and carbon atom.
- 8. The electrophotographic light-receiving member according to claim 5, wherein said oxygen atom is in a content of not more than 30 atomic %.
- 9. The electrophotographic light-receiving member according to claim 5, wherein said nitrogen atom is in a content of not more than 30 atomic %.
- 10. The electrophotographic light-receiving member according to claim 5, wherein the total content of said oxygen atom and nitrogen atom is not more than 30 atomic %.
- 11. The electrophotographic light-receiving member according to claim 5, wherein said element belonging to Group III of the periodic table is not more than 1.times.10.sup.5 atomic ppm.
- 12. The electrophotographic light-receiving member according to claim 1, wherein said fluorine atom in said photoconductive layer is in a maximum content at, its interface on the side of said surface layer.
- 13. The electrophotographic light-receiving member according to claim 1, wherein said halogen atom in said surface layer is in a content of not more than 20 atomic %.
- 14. The electrophotographic light-receiving member according to claim 1, wherein the total content of the hydrogen atom and halogen atom in said surface layer is in the range of from 30 atomic % to 70 atomic %.
- 15. The electrophotographic light-receiving member according to claim 1, wherein said photoconductive layer contains an element belonging to Group III or Group V of the periodic table.
- 16. The electrophotographic light-receiving member according to claim 1, wherein said photoconductive layer contains an oxygen atom.
- 17. The electrophotographic light-receiving member according to claim 16, wherein said oxygen atom is in a content of from 10 atomic ppm to 5,000 atomic ppm.
- 18. The electrophotographic light-receiving member according to claim 1, wherein said fluorine atom in said photoconductive layer is in a content of from 1 atomic ppm to 50 atomic ppm.
- 19. The electrophotographic light-receiving member according to claim 1, wherein said fluorine atom is in a content of from 5 atomic ppm to 50 atomic ppm.
- 20. The electrophotographic light-receiving member according to claim 1, wherein said photoconductive layer has a first photoconductive layer and a second photoconductive layer in that order from the side of said conductive substrate, and said first photoconductive layer contains said carbon atom and fluorine atom.
- 21. The electrophotographic light-receiving member according to claim 20, wherein said second photoconductive layer has a layer thickness of from 0.5 .mu.m to 15 .mu.m.
Priority Claims (9)
Number |
Date |
Country |
Kind |
3-153706 |
May 1991 |
JPX |
|
3-153710 |
May 1991 |
JPX |
|
3-153718 |
May 1991 |
JPX |
|
3-153741 |
May 1991 |
JPX |
|
3-153754 |
May 1991 |
JPX |
|
3-153797 |
May 1991 |
JPX |
|
3-153816 |
May 1991 |
JPX |
|
3-153823 |
May 1991 |
JPX |
|
3-293389 |
Nov 1991 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 07/890,538 filed May 28, 1992, now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (8)
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Date |
Country |
2746967 |
Apr 1979 |
DEX |
2855718 |
Jun 1979 |
DEX |
3201146 |
Sep 1982 |
DEX |
54-145540 |
Nov 1979 |
JPX |
56-83746 |
Jul 1981 |
JPX |
58-219560 |
Dec 1983 |
JPX |
60-67950 |
Apr 1985 |
JPX |
60-67951 |
Apr 1985 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Patent Abstracts of Japan, vol. 12, No. 216 (P-719) (3063) Jun. 21, 1983. |
Patent Abstracts of Japan, vol. 12, No. 354 (P-761) (3201) Sep. 22, 1988. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
890538 |
May 1992 |
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