The present invention relates generally to shielding reticles in lithographic systems. More particularly, the present invention relates to a blind which may be opened and closed as needed to control the projection of a laser beam through a reticle of a lithography tool.
Lithography machines operate by passing light, typically generated by a laser, through the reticle. An optical projection system then projects the pattern onto the wafer. To prevent the laser beam from passing through the reticle onto the incorrect location on the wafer, reticle blinds are often used to shield the reticle from the laser until the wafer is properly positioned. Reticle blinds, which are typically used in a horizontal orientation, can be configured to operate at high speeds. At relatively high speeds, however, the blinds can cause mechanical disturbances and reaction forces, which may again cause a compromise in the integrity of the exposure process. Furthermore, the horizontal configuration often requires undesired compromises in the optical design of the lithographic system.
Therefore, a reticle blind which is capable of being opened and closed at a relatively high speed, which does not cause mechanical disturbances or reaction forces, and which operates in a vertical orientation is needed.
The present invention relates to a reticle blind which is capable of being opened and closed at a relatively high speed and which does not cause mechanical disturbances or reaction forces. The reticle blind includes two reticle blind assemblies designed to cooperate with one another to control the passing of a laser beam of an exposure system onto a work piece, such as a semiconductor wafer or flat panel display. Each reticle blind assembly includes a linear motor having a mover and a blind configured to be positioned between a first position and a second position by the mover. Each reticle blind assembly also includes a counter mass assembly including a portion of a guide mechanism having at least one guide bar and a stator of the linear motor. The stator of the linear motor and the guide bar are integrated to form the counter mass which is configured to absorb reaction forces that are created when the blind is moved. In various embodiments, the blinds can be configured to operate in the vertical or horizontal orientation.
The invention may best be understood by reference to the following description taken in conjunction with the accompanying drawings in which:
Referring next to
To protect wafer 122 from being exposed to laser beam 124 before an appropriate time, e.g., before the portion of wafer 122 to be exposed is situated in the path of laser beam 124, an automatic reticle blind is used to shield reticle 114 and, hence, wafer 122 from laser beam 124. An automatic reticle blind may be positioned horizontally, as for example within first portion 110a of illumination unit 110, or vertically, as for example within second portion 110b of illumination unit 110.
With reference to
Referring to
Reticle blind 300, when in a closed position as shown in
As the wafer and reticle move into the proper position, the exposure area 310 on the wafer is exposed by moving first blind half 300a in a direction along z-axis 308 away from second blind half 300b, as shown in
As the exposure process is completed with respect to exposure area 310, exposure area 310 is once again needs to be shielded from the laser beam. To shield exposure area 310, second blind half 300b is moved upward along the Z-axis 308 so that the second blind half 300b shields exposure area 310.
As the wafer and reticle are positioned and ready to be exposed again, the second blind half 300b is moved downward along z-axis 308 away from first blind half 300a, as illustrated in
As the exposure process is completed, the first blind half 300a is moved downward along the Z-axis 308 toward second blind half 300b to shield exposure area 310, as shown in
The above-described steps as illustrated in
Referring to
In
Referring to
Referring to
Referring to
During operation, electric current is applied to the array of coils provided within the stator 412. The current in the array of coils interacts with the magnetic field of the magnets 411 in the mover 410, creating a force. The force causes the blind assembly 401 to travel along the stator 412 between the first and second positions 404 and 406. Thus, by controlling the current, which in turn controls the force, the position of the blind 402 can be precisely controlled. When the blind assembly 401 is moved, the bushings 418 guide the movement of the mover 410 along the guide bars 416.
The half blind 400 is designed to cooperate with a complimentary second half blind 400. The two half blinds 400 operate as described above with regard to
Referring to
Referring to
Referring to
Referring to
Referring to
During operation, electric current is applied to the array of coils 507 provided in the stator 506. The current in the array coils 507 interacts with the magnetic field of the magnets provided within the mover 504, creating a force. The force causes the blind assembly 501 to travel along the stator 506. By controlling the current applied to the array of coils 507, the position of the blind and mover can be precisely controlled between the first position 508 and the second position 510.
The half blind 500 is designed to cooperate with a complimentary second half blind 500. The two half blinds 500 operate as described above with regard to
Referring to
Referring to
Referring to
Referring to
During operation, current is applied to the two arrays of coils 618 of the stator 606. The current in the coils interacts with magnets contained within the mover 604, creating a force. The force causes the mover 604 and blind 602 to travel along the stator 606 as guided by the guide bars 610. By controlling the current, which in turn controls the force, the position of the blind 602 can be precisely controlled between the first position 611A and the second position 611B. When the blind 602 and mover 604 are moved, it creates reaction forces. The driving force of the linear motor (mover 604 and stator 606) creates a moment on the blind assembly (blind 602 and mover 604) and the reaction force of the linear motor creates an opposing moment on the counter mass, wherein the moment and the opposing moment substantially cancel each other out. With the embodiment illustrated in
In various embodiments, the magnet arrays described above with regard to the embodiments described in relation to
According to other embodiments, a support assembly may be needed to compensate for the force of gravity on the counter mass assemblies described above. The configuration of an anti-gravity device may vary widely. A few embodiments according to the present invention are discussed below.
Referring to
In lieu of using a pressurized air piston to provide anti-gravity capabilities, a vacuum air piston, or an air piston with a vacuum chamber instead of a pressurized air chamber, may be used.
In another embodiment, a mechanical spring may be used as an anti-gravity device that supports a counter mass 746. As shown in
Referring next to
Wafer table 51 may be levitated in a z-direction 10b by any number of VCMs (not shown), e.g., three voice coil motors. In one embodiment, at least three magnetic bearings (not shown) couple and move wafer table 51 along an x-axis 10c and a y-axis 10a. The motor array of wafer positioning stage 52 is typically supported by a base 70. Base 70 may be supported to a ground via isolators 54, or may be supported directly on the ground. Reaction forces generated by motion of wafer stage 52 may be mechanically released to a ground surface through a frame 66. One suitable frame 66 is described in JP Hei 8-166475 and U.S. Pat. No. 5,528,118, which are each herein incorporated by reference in their entireties.
An illumination system 42, in which an automatic reticle blind may be positioned, is supported by a frame 72. Frame 72 is supported to the ground via isolators 54. Frame 72 may be part of a lens mount system of illumination system 42, and may be coupled to an active damper (not shown) which damps vibrations in frame 72 and, hence, illumination system 42. Illumination system 42 includes an illumination source, and is arranged to project a radiant energy, e.g., light, through a mask pattern on a reticle 68 that is supported by and scanned using a reticle stage 44 which includes a coarse stage and a fine stage. The radiant energy is focused through projection optical system 46, which is supported on a projection optics frame 50 and may be supported the ground through isolators 54. Suitable isolators 54 include those described in JP Hei 8-330224 and U.S. Pat. No. 5,874,820, which are each incorporated herein by reference in their entireties.
A first interferometer 56 is supported on projection optics frame 50, and functions to detect the position of wafer table 51. Interferometer 56 outputs information on the position of wafer table 51 to system controller 62. In one embodiment, wafer table 51 has a force damper which reduces vibrations associated with wafer table 51 such that interferometer 56 may accurately detect the position of wafer table 51. A second interferometer 58 is supported on projection optics frame 50, and detects the position of reticle stage 44 which supports a reticle 68. Interferometer 58 also outputs position information to system controller 62.
It should be appreciated that there are a number of different types of photolithographic apparatuses or devices. For example, photolithography apparatus 40, or an exposure apparatus, may be used as a scanning type photolithography system which exposes the pattern from reticle 68 onto wafer 64 with reticle 68 and wafer 64 moving substantially synchronously. In a scanning type lithographic device, reticle 68 is moved perpendicularly with respect to an optical axis of a lens assembly (projection optical system 46) or illumination system 42 by reticle stage 44. Wafer 64 is moved perpendicularly to the optical axis of projection optical system 46 by a wafer positioning stage 52. Scanning of reticle 68 and wafer 64 generally occurs while reticle 68 and wafer 64 are moving substantially synchronously.
Alternatively, photolithography apparatus or exposure apparatus 40 may be a step-and-repeat type photolithography system that exposes reticle 68 while reticle 68 and wafer 64 are stationary, i.e., at a substantially constant velocity of approximately zero meters per second. In one step and repeat process, wafer 64 is in a substantially constant position relative to reticle 68 and projection optical system 46 during the exposure of an individual field. Subsequently, between consecutive exposure steps, wafer 64 is consecutively moved by wafer positioning stage 52 perpendicularly to the optical axis of projection optical system 46 and reticle 68 for exposure. Following this process, the images on reticle 68 may be sequentially exposed onto the fields of wafer 64 so that the next field of semiconductor wafer 64 is brought into position relative to illumination system 42, reticle 68, and projection optical system 46.
It should be understood that the use of photolithography apparatus or exposure apparatus 40, as described above, is not limited to being used in a photolithography system for semiconductor manufacturing. For example, photolithography apparatus 40 may be used as a part of a liquid crystal display (LCD) photolithography system that exposes an LCD device pattern onto a rectangular glass plate or a photolithography system for manufacturing a thin film magnetic head.
The illumination source of illumination system 42 may be g-line (436 nanometers (nm)), i-line (365 mn), a KrF excimer laser (248 nm), an ArF excimer laser (193 nm), and an F2-type laser (157 nm). Alternatively, illumination system 42 may also use charged particle beams such as x-ray and electron beams. For instance, in the case where an electron beam is used, thermionic emission type lanthanum hexaboride (LaB6) or tantalum (Ta) may be used as an electron gun. Furthermore, in the case where an electron beam is used, the structure may be such that either a mask is used or a pattern may be directly formed on a substrate without the use of a mask.
With respect to projection optical system 46, when far ultra-violet rays such as an excimer laser is used, glass materials such as quartz and fluorite that transmit far ultra-violet rays is preferably used. When either an F2-type laser or an x-ray is used, projection optical system 46 may be either catadioptric or refractive (a reticle may be of a corresponding reflective type), and when an electron beam is used, electron optics may comprise electron lenses and deflectors. As will be appreciated by those skilled in the art, the optical path for the electron beams is generally in a vacuum.
In addition, with an exposure device that employs vacuum ultra-violet (VUV) radiation of a wavelength that is approximately 200 nm or lower, use of a catadioptric type optical system may be considered. Examples of a catadioptric type of optical system include, but are not limited to, those described in Japan Patent. Application Disclosure No. 8-171054 published in the Official gazette for Laid-Open Patent Applications and its counterpart U.S. Pat. No. 5,668,672, as well as in Japan Patent Application Disclosure No. 10-20195 and its counterpart U.S. Pat. No. 5,835,275, which are all incorporated herein by reference in their entireties. In these examples, the reflecting optical device may be a catadioptric optical system incorporating a beam splitter and a concave mirror. Japan Patent Application Disclosure (Hei) No. 8-334695 published in the Official gazette for Laid-Open Patent Applications and its counterpart U.S. Pat. No. 5,689,377, as well as Japan Patent Application Disclosure No. 10-3039 and its counterpart U.S. Pat. No. 5,892,117, which are all incorporated herein by reference in their entireties. These examples describe a reflecting-refracting type of optical system that incorporates a concave mirror, but without a beam splitter, and may also be suitable for use with the present invention.
The present invention may be utilized, in one embodiment, in an immersion type exposure apparatus if suitable measures are taken to accommodate a fluid. For example, PCT patent application WO 99/49504, which is incorporated herein by reference in its entirety, describes an exposure apparatus in which a liquid is supplied to a space between a substrate (wafer) and a projection lens system during an exposure process. Aspects of PCT patent application WO 99/49504 may be used to accommodate fluid relative to the present invention.
Further, the present invention may be utilized in an exposure apparatus that comprises two or more substrate and/or reticle stages. In such an apparatus, e.g., an apparatus with two substrate stages, one substrate stage may be used in parallel or preparatory steps while the other substrate stage is utilizes for exposing. Such a multiple stage exposure apparatus is described, for example, in Japan patent Application Disclosure No. 10-163099, as well as in Japan patent Application Disclosure No. 10-214783 and its U.S counterparts, namely U.S. Pat. No. 6,341,007, U.S. Pat. No. 6,400,441, U.S. Pat. No. 6,549,269, U.S. Pat. No. 6,590,634. Each of these Japan patent Application Disclosures and U.S. Patents are incorporated herein by reference in their entireties. A multiple stage exposure apparatus is also described in Japan patent Application Dislosure No. 20000-505958 and its counterparts U.S. Pat. No. 5,969,441 and U.S. Pat. No. 6,208,407, each of which are incorporated herein by reference in their entireties.
The present invention may be utilized in an exposure apparatus that has a movable stage that retains a substrate (wafer) for exposure, as well as a stage having various sensors or measurement tools, as described in Japan patent Application Disclosure No. 11-135400, which is incorporated herein by reference in its entirety. In addition, the present invention may be utilized in an exposure apparatus that is operated in a vacuum environment such as an EB type exposure apparatus and an EUVL type exposure apparatus when suitable measures are incorporated to accommodate the vacuum environment for air (fluid) bearing arrangements.
Further, in photolithography systems, when linear motors (see U.S. Pat. Nos. 5,623,853 or 5,528,118, which are each incorporated herein by reference in their entireties) are used in a wafer stage or a reticle stage, the linear motors may be either an air levitation type that employs air bearings or a magnetic levitation type that uses Lorentz forces or reactance forces. Additionally, the stage may also move along a guide, or may be a guideless type stage which uses no guide.
Alternatively, a wafer stage or a reticle stage may be driven by a planar motor which drives a stage through the use of electromagnetic forces generated by a magnet unit that has magnets arranged in two dimensions and an armature coil unit that has coil in facing positions in two dimensions. With this type of drive system, one of the magnet unit or the armature coil unit is connected to the stage, while the other is mounted on the moving plane side of the stage.
Movement of the stages as described above generates reaction forces which may affect performance of an overall photolithography system. Reaction forces generated by the wafer (substrate) stage motion may be mechanically released to the floor or ground by use of a frame member as described above, as well as in U.S. Pat. No. 5,528,118 and published Japanese Patent Application Disclosure No. 8-166475. Additionally, reaction forces generated by the reticle (mask) stage motion may be mechanically released to the floor (ground) by use of a frame member as described in U.S. Pat. No. 5,874,820 and published Japanese Patent Application Disclosure No. 8-330224, which are each incorporated herein by reference in their entireties.
Isolaters such as isolators 54 may generally be associated with an active vibration isolation system (AVIS). An AVIS generally controls vibrations associated with forces, i.e., vibrational forces, which are experienced by a stage assembly or, more generally, by a photolithography machine such as photolithography apparatus 40 which includes a stage assembly.
A photolithography system according to the above-described embodiments, e.g., a photolithography apparatus which makes use of an automatic reticle blind such as a horizontal automatic reticle blind or a vertical automatic reticle blind, may be built by assembling various subsystems in such a manner that prescribed mechanical accuracy, electrical accuracy, and optical accuracy are maintained. In order to maintain the various accuracies, prior to and following assembly, substantially every optical system may be adjusted to achieve its optical accuracy. Similarly, substantially every mechanical system and substantially every electrical system may be adjusted to achieve their respective desired mechanical and electrical accuracies. The process of assembling each subsystem into a photolithography system includes, but is not limited to, developing mechanical interfaces, electrical circuit wiring connections, and air pressure plumbing connections between each subsystem. There is also a process where each subsystem is assembled prior to assembling a photolithography system from the various subsystems. Once a photolithography system is assembled using the various subsystems, an overall adjustment is generally performed to ensure that substantially every desired accuracy is maintained within the overall photolithography system. Additionally, it may be desirable to manufacture an exposure system in a clean room where the temperature and humidity are controlled. Further, semiconductor devices may be fabricated using systems described above, as will be discussed with reference to
At each stage of wafer processing, when preprocessing steps have been completed, post-processing steps may be implemented. During post-processing, initially, in step 1315, photoresist is applied to a wafer. Then, in step 1316, an exposure device may be used to transfer the circuit pattern of a reticle to a wafer. Transferring the circuit pattern of the reticle of the wafer generally includes scanning a reticle scanning stage. It should be appreciated that when the circuit pattern of the reticle is transferred to the wafer, an automatic reticle blind is generally in an open position to allow a laser beam to pass therethrough.
After the circuit pattern on a reticle is transferred to a wafer, the exposed wafer is developed in step 1317. Once the exposed wafer is developed, parts other than residual photoresist, e.g., the exposed material surface, may be removed by etching. Finally, in step 1319, any unnecessary photoresist that remains after etching may be removed. As will be appreciated by those skilled in the art, multiple circuit patterns may be formed through the repetition of the preprocessing and post-processing steps.
Although only a few embodiments of the present invention have been described, it should be understood that the present invention may be embodied in many other specific forms without departing from the spirit or the scope of the present invention. By way of example, one process (described above) of using an automatic reticle blind to shield an exposure area involves moving each half blind independently to open and close the exposure area. . Alternatively, the two half blinds can be spaced apart by the correct distance and moved synchronously together. In this configuration, a larger reticle blind assembly is required, but the construction and operation may be easier.
While a reticle blind may include two portions or halves, a reticle blind may instead include more than two portions. For instance, a reticle blind may include four portions that are each arranged to move. In one embodiment, the use of four portions for a reticle blind may enable the size of an opening or a slit in the reticle blind to be precisely controlled relative to more than one axis.
An air bearing arrangement that is used in a reticle blind assembly has been described as consisting of guide bars and bushings. In one embodiment, openings which allow air to be supplied to an air bearing surface may be incorporated into a moving part of the assembly or into a substantially stationary part of the assembly. It should be appreciated that in the first case as drag, e.g., drag associated with air supply hoses or cables, may be generated when air is supplied through a moving part, measures may need to be taken to reduce the effects of drag. Other bearing configurations which guide the blind assembly to move in substantially one degree of freedom may also be used.
An automatic blind has been described as being used to shield a reticle from a laser. In general, an automatic blind may be used to shield substantially any object. For instance, an automatic blind may be arranged to shield a wafer. Additionally, an automatic blind may shield an object such as a reticle from any light source or otherwise contaminating source.
The steps associated with using an automatic reticle blind may vary widely. Steps may be added, removed, and altered without departing from the spirit or scope of the present invention. For example, a reticle blind that includes two halves may be arranged such that only one half of the reticle blind moves to shield and to unshield an exposure area of a wafer. Therefore, the present examples are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope of the appended claims.