Claims
- 1. A quantum mechanically entangled lithographic etching device, comprising:a source of quantum mechanically-entangled particles with a wavelength λ; and an interferometer which produces an interference pattern by producing a phase shift between n of said entangled particles, where n>1, and using said phase shift to produce an interference fringe, where said interference fringe has bright spots and dark spots, an adjacent bright spot being spaced from one another by less than λ/2; and a lithographic etching device, producing a lithographic etch in a target using said interference pattern.
- 2. A device as in claim 1 wherein said interferometer is Mach-Zender interferometer.
- 3. A device as in claim 1 wherein said source includes a nonlinear optical element for producing entangled photons.
- 4. A device as in claim 1 wherein there are two of said particles, and wherein the interference fringes are spaced by λ/8 times a constant.
- 5. A device as in claim 1 wherein there are three of said photons and said photons are spaced by λ/12 times a constant.
- 6. A lithography method, comprising:producing a plurality n of entangled particles with a wavelength λ; inputting said entangled particles into an interferometric device which produces a phase shift between different paths; obtaining an output of said interferometric device having a pattern spacing between parts of said pattern proportional to λ over 4N where N is the number of entangled particles; and using said output for lithography.
- 7. A method as in claim 6 wherein said particles are photons.
- 8. A method as in claim 7 wherein there are two of said photons.
- 9. A method as in claim 8 wherein there are three of said photons.
- 10. A method of carrying out quantum lithography, comprising:obtaining a plurality of entangled particles, which are quantum entangled with one another; establishing an interferometer system which is decoupled to its environment, and applying said entangled particles into said interferometer system to cause interference there, between to form interference fringes spaced from one another by λ over 4N where N is a number of decoupled photons; and using said interference fringes for lithography.
CROSS REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of the U.S. Provisional Application Ser. No. 60/135,316, filed on May 20, 1999.
STATEMENT AS TO FEDERALLY SPONSORED RESEARCH
The invention described herein was made in the performance of work under a NASA contract, and is subject to the provisions of Public Law 96-517 (35 U.S.C. 202) in which the Contractor has elected to retain title.
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Provisional Applications (1)
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|
60/135316 |
May 1999 |
US |