Low-k interconnect structures with reduced RC delay

Abstract

A method for forming an integrated circuit includes forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, forming a dielectric barrier layer covering at least sidewalls of the opening, performing a treatment to improve a wetting ability of the dielectric barrier layer, and filling the opening with a conductive material, wherein the conductive material is in contact with the dielectric barrier layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a conventional interconnect structure including a low-k dielectric material and a conductive diffusion barrier layer;

FIGS. 2 through 7 are cross-sectional views of intermediate stages in the manufacturing of a preferred interconnect structure comprising a dielectric barrier layer, wherein a dual damascene process is illustrated;

FIG. 8 illustrates an interconnect structure comprising a dielectric barrier layer, wherein a single damascene structure is further illustrated;

FIG. 9 illustrates parasitic capacitances between neighboring metal lines as a function of sheet resistances of metal lines; and

FIG. 10 illustrates sheet resistances of metal lines as a function of number of bakings.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

A novel method for forming a low-k dielectric layer and a corresponding interconnect structure is provided. The intermediate stages for manufacturing the preferred embodiment of the present invention are illustrated. Variations of the preferred embodiments are then discussed. Throughout the various views and illustrative embodiments of the present invention, like reference numbers are used to designate like elements.

FIG. 2 illustrates a starting structure, wherein a conductive line 22 is formed in a dielectric layer 20. Conductive line 22 and dielectric layer 20 are over a semiconductor substrate 100, which is preferably a silicon substrate having semiconductor devices formed thereon. For simplicity, substrate 100 is omitted in subsequent drawings. Conductive line 22 is preferably a metal line comprising copper, tungsten, aluminum, silver, gold, and combinations thereof. Conductive line 22 may be connected to another underlying feature (not shown), such as a via or a contact plug. Dielectric layer 20 may be an inter-metal dielectric (IMD) layer, preferably having a low dielectric constant (k value). In a first embodiment, as shown in FIG. 2, an etch stop layer 23 is formed between dielectric layer 20 and the underlying layer (not shown). In alternative embodiment, the etch stop layer 23 is not formed.

Etch stop layer (ESL) 24 is formed on dielectric layer 20 and conductive line 22. Preferably, ESL 24 comprises nitrides, silicon-carbon based materials, carbon-doped oxides, and combinations thereof. The preferred formation method includes plasma enhanced chemical vapor deposition (PECVD). However, other commonly used deposition methods such as high-density plasma CVD (HDPCVD), atomic layer CVD (ALCVD), and the like, can also be used. In an exemplary embodiment, wherein ESL 24 comprises silicon nitride or silicon carbide, the formation is preferably performed in a chamber, in which gaseous precursors such as silane (SiH₄) and ammonia (NH₃) are introduced, and a chemical reaction occurs with the assistance of plasma.

In alternative embodiments, dielectric layer 24 is a diffusion barrier layer, which is used for preventing undesirable elements, such as copper, from diffusing into the subsequently formed low-k dielectric layer. In a more preferred embodiment, dielectric layer 24 acts as both an etch stop layer and a diffusion barrier layer.

FIG. 3 illustrates the formation of a dielectric layer 28, which provides insulation between conductive line 22 and the overlying conductive lines that will be subsequently formed. In the preferred embodiment, dielectric layer 28 has a low dielectric constant, hence is referred to as a low-k dielectric layer 28 throughout the description. In other embodiments, dielectric layer 28 may have a high k value such as greater than about 3.5. Low-k dielectric layer 28 preferably has a k value of lower than about 3.5, and more preferably lower than about 2.5. The preferred materials include carbon-containing materials, organo-silicate glass, porogen-containing materials, and combinations thereof. Low-k dielectric layer 28 may be deposited using a chemical vapor deposition (CVD) method, preferably PECVD, although other commonly used deposition methods such as low pressure CVD (LPCVD), ALCVD and spin-on, can also be used.

A first treatment, which preferably includes a curing process, is then performed. The curing process may be performed using commonly used curing methods, such as ultraviolet (UV) curing, eBeam curing, thermal curing, and the like, and may be performed in a production tool that is also used for PECVD, atomic layer deposition (ALD), LPCVD, etc. The curing may be performed in a vacuum environment or in an environment containing process gases such as H₂, N₂, inert gases including He, Ne, Ar, Kr, Xe, Rn, and combinations thereof.

The treatment serves the function of driving porogen out of low-k dielectric layer 28 and improving its mechanical property. Pores will then be generated in low-k dielectric layer 28, and the k value will be reduced.

FIG. 4 illustrates the formation of a via opening 30 and a trench opening 32 in low-k dielectric layer 28. Photo resists (not shown) are formed and patterned over low-k dielectric layer 28 to aid in the formation of via opening 30 and trench opening 32. In the preferred embodiment, an anisotropic etch cuts through the low-k dielectric layer 28 and stops at ESL 24, thereby forming a via opening 30. Trench opening 32 is then formed. In alternative embodiments, a trench-first approach is taken, in which trench opening 32 is formed prior to the formation of via opening 30. ESL 24 is then etched through via opening 30, exposing underlying conductive line 22. Alternatively, ESL 24 may be left in place, and removed together with the subsequently formed dielectric diffusion barrier layer 34 (refer to FIG. 6).

In alternative embodiments, low-k dielectric layer 28 may be replaced by a stacked layer including a first low-k dielectric layer, an ESL on the first low-k dielectric layer, and a second low-k dielectric layer on the ESL (not shown). The ESL is used for stopping the formation of trench opening 32. One skilled in the art will realize the appropriate process steps.

FIG. 5 illustrates the formation of a dielectric layer 34. In the preferred embodiment, dielectric barrier layer 34 is formed by ATRP (C₁₀H₆, also referred to as α-Terpinene). The k value of dielectric barrier layer 34 is preferably between about 2.5 and about 5.5.

In an exemplary embodiment, dielectric barrier layer 34 includes carbon, which may be formed of ATRP. The corresponding process gases include tetramethysilane (4MS) only, a combined gas of 4MS and NH₃, He, and combinations thereof. The process conditions include a chamber pressure of between about 1.5 torr and about 8 torr, a duration of between about 10 seconds and about 600 seconds, and a temperature of between about 200° C. and about 400° C.

In the embodiment wherein dielectric barrier layer 34 comprises relatively big atoms/molecules, which are bigger than the surface pores of low-k dielectric layer 28, a separate dielectric barrier layer 34 is formed on the exposed surface of low-k dielectric layer 28. Preferably, dielectric barrier layer 34 has a thickness of between about 10 Å and about 100 Å, and more preferably between about 50 Å and about 70 Å. In alternative embodiments wherein the deposited atoms/molecules are smaller than the surface pores of low-k dielectric layer 28, infiltration may occur so that deposited material substantially fills the surface pores of low-k dielectric layer 28, and the resulting low-k dielectric barrier layer 34 is the modification of a surface layer of low-k dielectric layer 28.

A treatment is then performed to improve the wetting ability of dielectric barrier layer 34, which in turn improves the adhesion between low-k dielectric barrier layer 34 and the layer formed thereon. In the preferred embodiment, the treatment includes plasma treatment, thermal treatment, e-beam treatment, UV treatment, and the like.

In a first embodiment, the treatment to dielectric barrier layer 34 includes two steps. In a first step, a pre-treatment is performed. Process gases for the pre-treatment preferably include a combined gas of N₂ and NH₃. In an exemplary embodiment, the pre-treatment is performed with a chamber pressure of between about 1.5 torr and about 8 torr, a substrate temperature of between about 200° C. and about 400° C., a process gas flow rate of between about 100 sccm and about 3000 sccm, and a treatment duration of between about 10 seconds—and about 600 seconds. In a second step, a post-treatment is performed, which process gases preferably include SiH₄. Hydrogen (H₂) may also be added. In an exemplary embodiment, the post-treatment is performed with a chamber pressure of between about 1.5 torr and about 8 torr, a substrate temperature of between about 200° C. and about 400° C., a process gas flow rate of between about 100 sccm and about 3000 sccm, and a treatment duration of about 10 seconds and about 600 seconds.

In alternative embodiments, the treatment to dielectric barrier layer 34 includes plasma treatment in a combined gas including N₂, NH₃, and SiH₄. H₂ may also be added. In an exemplary embodiment, the treatment is performed with a chamber pressure of about 1.5 torr to about 8 torr, a substrate temperature of about 200° C. and about 400° C., a process gas flow rate of between about 100 sccm and about 6000 sccm, and a treatment duration of about 10 seconds and about 600 seconds.

FIG. 6 illustrates the removal of dielectric barrier layer 34 from the bottom of via opening 30, which may be performed by forming and patterning photo resist 40, wherein the bottom of via opening 30 is exposed, and etching dielectric barrier layer 34 from the bottom of via opening 30. Photo resist 40 is then removed.

Referring to FIG. 7, via opening 30 and trench opening 32 are filled with a conductive material, preferably copper or copper alloys. However, other metals and metal alloys such as aluminum, tungsten, silver and gold can also be used. As is known in the art, the filling of via opening 30 and trench opening 32 may include depositing a copper seed layer (not shown) and plating copper to fill via opening 30 and trench opening 32. A chemical mechanical polish is then performed to level the surface of the filling material to a top surface of low-k dielectric layer 28, forming via 42 and metal line 44.

The previously discussed embodiment illustrates the formation of a dual damascene structure. It is appreciated that the methods discussed in the preceding paragraphs are readily available for single damascene process. FIG. 8 illustrates a dielectric barrier layer 50 formed in a single damascene structure. With the teaching provided in the preceding paragraphs, one skilled in the art will realize the respective process steps. In addition, barrier layer 34 may be formed for interconnected structures formed in high-k dielectric layers, for example, SiO₂ layers.

Experiment results of the present invention are illustrated in FIG. 9, which shows parasitic capacitances between neighboring copper lines as a function of sheet resistances. Diamonds indicate results measured from a sample formed using the preferred embodiment of the present invention, while squares indicate results measured from a sample having a similar structure and same dimensions, except that a TaN diffusion barrier layer, instead of a dielectric barrier layer, is used. The results revealed that for a same sheet resistance, the parasitic capacitance of the sample, having a dielectric barrier layer, is lower than the parasitic capacitance of the sample having a TaN diffusion barrier layer. Therefore, the overall RC delay of the interconnect structures may be reduced by using the embodiments of the present invention. Further experiments have revealed that the uniformity of the samples of the present invention is improved over samples having TaN diffusion barrier layers.

FIG. 10 illustrates the integrity performance of metal lines, wherein sheet resistances of metal lines are illustrated as a function of number of bakings performed on samples. Diamonds represent the data obtained from a sample having a 70 Å dielectric barrier layer, which is formed using ATRP. Triangles represent the data obtained from a sample having no diffusion barrier layer. Squares represent the data obtained from a sample having a 70 Å tantalum diffusion barrier layer. It is noted that the sample having dielectric diffusion barrier layer exhibits integrity performance substantially comparable to the sample having a tantalum diffusion barrier layer, which is significantly improved over the sample having no barrier layer. The results show that after the first baking following the deposition of copper (As Dep), the sheet resistances of the preferred embodiments are substantially unchanged with the increase in the number of bakings, indicating a reliable adhesion between the dielectric barrier layer and copper.

Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, and composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.

Claims

1. A method for forming an integrated circuit, the method comprising: forming a low-k dielectric layer over a semiconductor substrate;etching the low-k dielectric layer to form an opening;forming a dielectric barrier layer covering at least sidewalls of the opening;performing a treatment to the dielectric barrier layer; andfilling the opening with a conductive material, wherein the conductive material is in contact with the dielectric barrier layer.

2. The method of claim 1, wherein the step of performing the treatment comprises: pre-treating the dielectric layer using process gases comprising N2 and NH3; andpost-treating the dielectric layer using process gases comprising SiH4.

3. The method of claim 2, wherein during the step of post-treating, the process gases further comprise H2.

4. The method of claim 1, wherein process gases used in the step of performing the treatment comprise N2, NH3, and SiH4.

5. The method of claim 4, wherein the process gases further comprise H2.

6. The method of claim 1, wherein the dielectric barrier layer comprises ATRP.

7. The method of claim 1, wherein the step of performing the treatment comprises plasma-assisted treatment.

8. The method of claim 1 further comprising removing a portion of the dielectric barrier layer from a bottom of the opening before the step of filling the opening.

9. The method of claim 1, wherein the dielectric barrier layer has a thickness of between about 10 Å and about 100 Å.

10. The method of claim 1, wherein the treatment improves a wetting ability of the dielectric barrier layer.

11. A method for forming an integrated circuit, the method comprising: forming a porous dielectric layer over a semiconductor substrate;forming an opening in the porous dielectric layer;sealing the porous dielectric layer with a dielectric barrier layer;treating the porous dielectric barrier layer to improve a wetting ability of the dielectric barrier layer; andfilling the opening with a conductive material, wherein the conductive material is in direct contact with the dielectric barrier layer.

12. The method of claim 11, wherein the dielectric barrier layer comprises a separate layer from the porous dielectric layer.

13. The method of claim 11, wherein the dielectric barrier layer comprises a surface portion of the porous dielectric layer.

14. The method of claim 11, wherein the step of treating the porous dielectric layer comprises plasma-assisted treatment.

15. The method of claim 11 further comprising a chemical mechanical polish to remove excess portions of the conductive material.

16. The method of claim 11 further comprising removing a portion of the dielectric barrier layer from a bottom of the opening before the step of filling the opening.

17. The method of claim 11, wherein the step of performing the treatment comprises: pre-treating the dielectric barrier layer, wherein process gases comprise N2 and NH3; andpost-treating the dielectric barrier layer, wherein process gases comprise SiH4.

18. The method of claim 17, wherein during the step of post-treating, the process gases further comprise H2.

19. The method of claim 11, wherein process gases used in the step of treating comprise N2, NH3, and SiH4.

20. The method of claim 19, wherein the process gases further comprise H2.