Stuart Tewksbury et al., "Strong Carier Freezeout Above 77K in Tellurium-Doped Buried-Channel MOS Transistors," IEEE Trans. on Electron Devices, vol. ED-32, No. 1, pp. 67-69 (1985). |
F. Scholz et al., "Low Frequency Noise and DLTS As Semiconductor Device Characterization Tools," Solid State Electronics, vol. 31, No. 2, pp. 205-217 (1988). |
F. Scholz et al., "Low Frequency Noise as a Process Development and Characterization Tool," Electrochemical Society Proc., pp. 240-263 (1988). |
David C. Murray et al., "Shallow Defects Responsible for GR Noise in MOSFET's," IEEE Trans. on Electron Devices, vol. 38, No. 2, pp. 407-416 (Feb. 1991). |