with field effect produced by an insulated gate

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CPC
H01L29/78

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/78with field effect produced by an insulated gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Polyimide based copolymer and electronic component and field effect...
- Patent number 12,227,619
- Issue date Feb 18, 2025
- NATIONAL TAIWAN UNIVERSITY
- Wen-Chang Chen
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Thin film transistor having a semiconductor layer comprising a plur...
- Patent number 12,230,683
- Issue date Feb 18, 2025
- BOE Technology Group Co., Ltd.
- Lizhong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display substrate and manufacturing method thereof, display device
- Patent number 12,230,695
- Issue date Feb 18, 2025
- BOE Technology Group Co., Ltd.
- Meng Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,230,714
- Issue date Feb 18, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having partitioned source or drain co...
- Patent number 12,230,717
- Issue date Feb 18, 2025
- Intel Corporation
- Mauro J. Kobrinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with recessed top semiconductor layer in su...
- Patent number 12,230,720
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having asymmetric sou...
- Patent number 12,230,721
- Issue date Feb 18, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 12,230,634
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device
- Patent number 12,230,638
- Issue date Feb 18, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction MOSFET device
- Patent number 12,230,672
- Issue date Feb 18, 2025
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Tian Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device
- Patent number 12,232,371
- Issue date Feb 18, 2025
- Samsung Display Co., Ltd.
- Yoon-Jong Cho
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Backside signal interconnection
- Patent number 12,230,572
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including standard cell and filler cell
- Patent number 12,230,625
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Hakchul Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bridge channel field effect transistor with multiple inner sp...
- Patent number 12,230,685
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Sungsoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having increased forward biased safe operating area using so...
- Patent number 12,230,686
- Issue date Feb 18, 2025
- Infineon Technologies Americas Corp.
- Praveen Shenoy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET gate engineerinng with dipole films
- Patent number 12,230,688
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional device formation using early removal of sacrifici...
- Patent number 12,230,691
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,230,713
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar SiC MOSFET with retrograde implanted channel
- Patent number 12,230,675
- Issue date Feb 18, 2025
- HITACHI ENERGY LTD
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N based material structures, methods, devices and circuit modul...
- Patent number 12,230,678
- Issue date Feb 18, 2025
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with continuous active region and raised source/...
- Patent number 12,230,684
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jinha Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned inner spacer on gate-all-around structure and methods...
- Patent number 12,230,692
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsungyu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 12,230,693
- Issue date Feb 18, 2025
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with source/drain trenc...
- Patent number 12,230,694
- Issue date Feb 18, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method of manufacturing of a semiconduct...
- Patent number 12,230,708
- Issue date Feb 18, 2025
- Nexperia B.V.
- Kilian Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method of manufacturing the same
- Patent number 12,230,711
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 12,230,715
- Issue date Feb 18, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Junichi Koezuka
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 12,230,509
- Issue date Feb 18, 2025
- United Microelectronics Corp.
- Ming Thai Chai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including dummy gate dielectric layer and met...
- Patent number 12,230,545
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,627
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Isao Saito
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE PROCESSING DEVICE, AND METHOD FOR MANUFACTURING METAL OXI...
- Publication number 20250059645
- Publication date Feb 20, 2025
- Duck Ho KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063727
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Minhee CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TFT CIRCUIT BOARD AND DISPLAY DEVICE HAVING THE SAME
- Publication number 20250063767
- Publication date Feb 20, 2025
- Japan Display Inc.
- Yohei YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE
- Publication number 20250063775
- Publication date Feb 20, 2025
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Nano-Pillar Transistor Structures for 3-D ICS
- Publication number 20250063780
- Publication date Feb 20, 2025
- MURATA MANUFACTURING CO., LTD.
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250063836
- Publication date Feb 20, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Takeshi AOKI
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250062121
- Publication date Feb 20, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Toshinari SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063761
- Publication date Feb 20, 2025
- Japan Display Inc.
- Hajime WATAKABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250063771
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES
- Publication number 20250063774
- Publication date Feb 20, 2025
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063790
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063794
- Publication date Feb 20, 2025
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE
- Publication number 20250063805
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE STRUCTURE
- Publication number 20250063759
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250063711
- Publication date Feb 20, 2025
- SOCIONEXT INC.
- Yoshinobu YAMAGAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20250063718
- Publication date Feb 20, 2025
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE STRUCTURES AND METHODS OF FORMATION
- Publication number 20250063758
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DETECTION DEVICE
- Publication number 20250063883
- Publication date Feb 20, 2025
- Japan Display Inc.
- Takashi NAKAMURA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250063762
- Publication date Feb 20, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063763
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Won Keun CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC/OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250063766
- Publication date Feb 20, 2025
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Wen-Hsin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS

with field effect produced by an insulated gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Polyimide based copolymer and electronic component and field effect...

Thin film transistor having a semiconductor layer comprising a plur...

Display substrate and manufacturing method thereof, display device

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Integrated circuit structures having partitioned source or drain co...

Semiconductor structure with recessed top semiconductor layer in su...

Gate-all-around integrated circuit structures having asymmetric sou...

Semiconductor devices and methods of fabricating the same

Display device

Super junction MOSFET device

Display device

Backside signal interconnection

Integrated circuit including standard cell and filler cell

Multi-bridge channel field effect transistor with multiple inner sp...

Device having increased forward biased safe operating area using so...

MOSFET gate engineerinng with dipole films

Three dimensional device formation using early removal of sacrifici...

Semiconductor device structure and methods of forming the same

Planar SiC MOSFET with retrograde implanted channel

III-N based material structures, methods, devices and circuit modul...

Integrated circuit with continuous active region and raised source/...

Self-aligned inner spacer on gate-all-around structure and methods...

Semiconductor device and manufacturing method therefor

Method for making nanostructure transistors with source/drain trenc...

Semiconductor device and a method of manufacturing of a semiconduct...

Electronic device and method of manufacturing the same

Semiconductor device and method for manufacturing semiconductor device

Method for fabricating semiconductor device

Semiconductor devices including dummy gate dielectric layer and met...

Semiconductor device

Patents Applicationslast 30 patents

SUBSTRATE PROCESSING DEVICE, AND METHOD FOR MANUFACTURING METAL OXI...

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

SEMICONDUCTOR DEVICE

TFT CIRCUIT BOARD AND DISPLAY DEVICE HAVING THE SAME

SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE

Vertical Nano-Pillar Transistor Structures for 3-D ICS

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

ELECTRONIC DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD OF FORMING GATE STRUCTURE

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

SEMICONDUCTOR STORAGE DEVICE

NAND String Utilizing Floating Body Memory Cell

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

DETECTION DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

ELECTRONIC/OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME