Kim et al., “GMR Multilayer Device with Ring Type Bridge Structure,” IEEE Transactions on Magnetics, vol. 35, No. 5, Sep. 1999, pp. 3646-3648.* |
Indeck et al. “A Magentoresistive Gradiometer,” IEEE Transactions on Magnetics vol. 24, No. 6, Nov. 1988, pp. 2617-2619.* |
Jaquelin K. Spong, et al., “Giant Magnetoresistive Spin Valve Bridge Sensor”, Mar. 1996, IEEE Transactions on Magnetics, vol. 32, No. 2, pp. 366-371. |
Mark Johnson, “The All-Metal Spin Transistor”, May 1994, IEEE Spectrum, pp. 47-51. |
Mark Johnson, “Bipolar Spin Switch”, Apr. 16, 1996, Science, vol. 260, pp. 320-323. |
J.M. Daughton, “Magnetoresistive Memory Technology,” Jul. 28-Aug. 2, 1991, Int'l Workshop on Science and Technology of Thin Films for the 21st Century, vol. 216, pp. 162-168. |
K.T.M. Ranmuthu et al., “New Low Current Memory Modes with Giant Magneto-Resistance Materials,” Apr. 13, 1993, Digests of International Magnetics Conference, 2 pages. |
J.L. Brown, “1-Mb Memory Chip Using Giant Magnetoresistive Memory Cells,” Sep. 1994, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part A, vol. 17, No. 3, pp. 373-379. |
Paul a. Packan, “Pushing The Limits”, Sep. 24, 1999. science Mag, vol. 285, pp. 2079-2081. |
Lenssen, et al, “Expectations of MRAM in Comparison With Other Non-Volatile Memory Technologies”, Phillips Research Laboratories, pp. 26-30. |