Patent Application
20240006533
Metal contacts can be used to provide electrically conductive connections to semiconductor source/drain regions of field-effect transistors. Metal contacts have an associated parasitic resistance that, if large enough, can affect transistor performance.
Metal contacts to MOSFET (metal-oxide-silicon field-effect transistor) source/drain regions can be thermally unstable in that their resistance (contact resistance) increases after being subjected to high-temperature processing steps that occur in a semiconductor device manufacturing process after source/drain region formation. These back-end of line (BEOL) process steps can involve numerous annealing and other high-temperature processing steps that can cause diffusion of p-type dopants (e.g., boron, indium, and gallium) from the source/drain region into the contact and the deactivation of dopants (the movement of dopants off of a crystal lattice substitutional site of the semiconductor) in the source/drain region. Silicide formation at the contact-source/drain region interface can also catalyze the outdiffusion and deactivation of dopants in source/drain regions. Dopant outdiffusion and deactivation are understood to be at least partially responsible for metal contact thermal instability. The increased resistance of source/drain contacts due to their thermal instability can impact transistor performance if the form of, for example, reduced drive current.
Described herein are metal contacts comprising a boride, indium, or gallium metal compound layer for use in contacting p-type source/drain regions of transistors. The boride, indium, or gallium metal compound layers can aid in forming low-resistance contacts that are thermally stable. A boride, indium, or gallium metal compound layer is positioned between the p-type source/drain region and the contact metal layer of a contact. A metal compound layer comprising boron, indium, or gallium can be used in a contact to a p-type source/drain region comprising one or more of any type of p-type dopants. For example, in some embodiments, a boride metal compound layer can be used in contacts that contact p-type source/drain regions in which boron, indium, or gallium is the primary p-type dopant; an indium metal contact layer can be used in contacts contacting to p-type source/drain regions in which indium, boron, or gallium is the primary p-type dopant; and a gallium metal contact layer can be used in contacts contacting to p-type source/drain regions in which gallium, boron, or indium is the primary p-type dopant
The boride, indium, or gallium metal compound layer can aid in forming thermally stable low-resistance contacts by acting as a diffusion barrier and presenting a dopant concentration gradient that prevents or reduces dopant diffusion out of the source/drain regions and into the boride, indium, or gallium metal compound layer. In some embodiments, boride, indium, and gallium metal compound layers have an atomic ratio of about 50% boron, indium, and gallium, respectively, and boride, indium, or gallium metal compound layers can have boron, indium, and gallium concentrations on the order 1023 cm−3. In other embodiments, the metal compound layer can have an atomic ratio of 5-80% of boron, indium, or gallium. In such embodiments, the metal compound layers can have boron, indium, or gallium concentrations on the order of 1022 cm−3 or greater. The concentration of boron, indium, or gallium in the metal compound layer is thus greater than the concentration of boron, indium, and gallium in heavily doped source/drain regions, which can be on the order of 1021 cm−3. Thus, the inclusion of a boride, indium, or gallium metal compound layer may result in a “pile-up” of p-type dopants at the contact-source/drain region interface due to the diffusion of boron, indium, or gallium from the metal compound layer to the source/drain region as the result of BEOL high-temperature processing steps. That is, the concentration of boron, indium, or gallium in the source/drain region at the source/drain region-contact interface can be greater than that in the source/drain region after source/drain formation and prior to contact formation. Thus, an even greater concentration of boron, indium, or gallium may be activated in the source/drain region at the source/drain region-contact interface, which may result in a contact resistance less than that of contacts without a boride, indium, or gallium metal compound layer. Moreover, boride, indium, and gallium metal compound layers can also reduce the amount of contact metal silicide that forms in source/drain regions by limiting the amount of contact metal that diffuses from the contact metal layer into source/drain regions, which can further serve to reduce contact resistance. Dopant pile-up and the formation of thinner silicide regions at the source/drain region-contact interface can further aid in the formation of thermally stable low-resistance contacts that are thermally stable. The metal contact technologies disclosed herein can be used in planar FETs, tri-gate transistors (FinFETs), gate-all-around field-effect transistors (GAAFETs), and other transistor architectures.
In the following description, specific details are set forth, but embodiments of the technologies described herein may be practiced without these specific details. Well-known circuits, structures, and techniques have not been shown in detail to avoid obscuring an understanding of this description. Phrases such as “an embodiment,” “various embodiments,” “some embodiments,” and the like may include features, structures, or characteristics, but not every embodiment necessarily includes the particular features, structures, or characteristics.
Some embodiments may have some, all, or none of the features described for other embodiments. “First,” “second,” “third,” and the like describe a common object and indicate different instances of like objects being referred to. Such adjectives do not imply objects so described must be in a given sequence, either temporally or spatially, in ranking, or any other manner. “Connected” may indicate elements are in direct physical or electrical contact with each other and “coupled” may indicate elements cooperate or interact with each other, but they may or may not be in direct physical or electrical contact. Furthermore, the terms “comprising,” “including,” “having,” and the like, as used with respect to embodiments of the present disclosure, are synonymous.
Terms modified by the word “substantially” include arrangements, orientations, spacings, or positions that vary slightly from the meaning of the unmodified term. For example, a sidewall of a contact layer that is substantially perpendicular to a bottom portion of a contact layer or a substrate surface includes sidewalls that are within 20 degrees of perpendicular to the bottom portion of the contact layer or substrate surface, and a first surface that is substantially parallel to a second surface can include a first surface that is within several degrees of parallel from the second surface. Values modified by the word “about” include values with +/−10% of the listed values and values listed as being within a range include those within a range from 10% less than the listed lower range limit and 10% greater than the listed higher range limit.
Reference is now made to the drawings, which are not necessarily drawn to scale, wherein similar or same numbers may be used to designate same or similar parts in different figures. The use of similar or same numbers in different figures does not mean all figures including similar or same numbers constitute a single or same embodiment. Like numerals having different letter suffixes may represent different instances of similar components. The drawings illustrate generally, by way of example, but not by way of limitation, various embodiments discussed in the present document.
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding thereof. It may be evident, however, that the novel embodiments can be practiced without these specific details. In other instances, well known structures and devices are shown in block diagram form in order to facilitate a description thereof. The intention is to cover all modifications, equivalents, and alternatives within the scope of the claims
As used herein, the phrase “located on” in the context of a first layer, region, or component located on a second layer, region, or component refers to the first layer, region, or component being directly physically attached to the second part or component (no layers or components between the first and second layers or components) or physically attached to the second layer, region, or component with one or more intervening layers or components. For example, with reference to
As used herein, the term “positioned adjacent” refers to layers or components that are in physical contact with each other. That is, there is no layer, region, or component between the layers or components stated as being positioned adjacent to each other. For example, a layer X that is positioned adjacent to a layer Y refers to a layer that is in physical contact with layer Y.
As used herein, the term “integrated circuit component” refers to a packaged or unpacked integrated circuit product. A packaged integrated circuit component comprises one or more integrated circuit dies mounted on a package substrate with the integrated circuit dies and package substrate encapsulated in a casing material, such as a metal, plastic, glass, or ceramic. In one example, a packaged integrated circuit component contains one or more processor units mounted on a substrate with an exterior surface of the substrate comprising a solder ball grid array (BGA). In one example of an unpackaged integrated circuit component, a single monolithic integrated circuit die comprises solder bumps attached to contacts on the die. The solder bumps allow the die to be directly attached to a printed circuit board. An integrated circuit component can comprise one or more of any computing system component described or referenced herein or any other computing system component, such as a processor unit (e.g., system-on-a-chip (SoC), processor core, graphics processor unit (GPU), accelerator, chipset processor), I/O controller, memory, or network interface controller.
The contact metal layer 136 is positioned adjacent to the boride, indium, or gallium metal compound layer 128. The boride, indium, or gallium metal compound layer 128 and the contact metal layer 136 layer form a contact hole (or cavity) 162 in the dielectric layer 112 and the fill metal layer 140 at least partially fills the hole 162. In some embodiments, the contact 154 further comprises a barrier layer positioned between the contact metal layer 136 and the fill metal layer 140.
The gate 102 comprises a gate electrode 164, a gate dielectric layer 166, and a gate spacer 168. The gate spacer 168 isolates the gate stack (e.g., gate electrode 164, gate dielectric layer 166) from adjacent features.
In some embodiments, a silicide layer 129 is located in a portion of the source region 104 positioned adjacent to the boride, indium, or gallium metal compound layer 128 after processing is complete. The silicide layer 129 can be formed due to the diffusion of metal from the contact metal layer 136 to the source region 104. As the presence of the boride, indium, or gallium metal compound layer 128 can limit the amount of metal diffusion from the contact metal layer 136 to the source region 104, the thickness of the silicide layer 129 can be less than in embodiments where a contact does not have a boride, indium, or gallium metal compound layer. The thickness of the silicide layer 129 can be less than 3 nm in embodiments where a contact comprises a boride, indium, or gallium metal compound layer. In some embodiments where a contact comprises a boride, indium, or gallium metal compound layer, the thickness of the silicide layer 129 can be less than 1 nm. In some embodiments, the boride, indium, or gallium metal compound layer may be an effective enough barrier to prevent contact metal from diffusing into the source/drain region that no silicide layer comprising the contact metal is formed at the surface of the source/drain region.
The source region 235 comprises a source semiconductor region (or layer) 239 (shown in
The gate 222 controls the flow of current from the source region 235 to the drain region 237. The channel region of the transistor 220 is formed by the gate 222 encompassing the fin 230. The gate 222 comprises a gate electrode 264, a gate dielectric layer 266, and a gate spacer 268. The gate spacer 268 isolates the gate stack (e.g., gate electrode 264, gate dielectric layer 266) from adjacent features.
The fin 230 extends upwards from the surface 208 of the substrate 216 and extends along a length 231 of the surface 308 from an end 232 of the fin 230 to an opposite end (not shown) of the fin 230. In the FinFET embodiment illustrated in
Cross-sectional views 250 and 260 illustrate a contact 254 contacting the source semiconductor region 239. The contact 254 is not shown in
The contact metal layer 236 is positioned adjacent to the boride, indium, or gallium metal compound layer 228. The boride, indium, or gallium metal compound layer 228 and the contact metal layer 236 layer form a contact hole (or cavity) 262 in the dielectric layer 212 and the fill metal layer 240 at least partially fills the hole 262. In some embodiments, the contact 254 further comprises a barrier layer positioned between the contact metal layer 236 and the fill metal layer 240.
In some embodiments, a silicide layer 229 is located in a portion of the source region 235 positioned adjacent to the boride, indium, or gallium metal compound layer 228 after processing is complete. The silicide layer 229 can be formed in the same manner as silicide layer 129, as described above, and have a similar thickness as the silicide layer 129 (less than 3 nm in some embodiments and less than 1 nm in other embodiments).
The gate 322 controls the flow of current from a source portion 324 of the fin 330 to a drain portion 326 of the fin 330. The channel region of the transistor 320 is formed by the gate 322 encompassing a portion of the fin 330. The gate 322 comprises a gate electrode 364, a gate dielectric layer 366, and a gate spacer 368. The gate spacer 368 isolates the gate stack (e.g., gate electrode 364, gate dielectric layer 366) from adjacent features.
The fin 330 extends upwards from the surface 308 of the substrate 316 and extends along a length 331 of the surface 308 from a first end 332 to a second end 334. The source portion 324 of the fin 330 extends into the source region 335 and the drain portion 326 extends into the drain region 337. The source region 335 is shown in
Cross-sectional views 360 and 370 illustrate a semiconductor region 358 positioned adjacent to the portion of the fin 330 extending past the surface 308 of the substrate 316. The semiconductor region 358 can aid in the formation of low resistance source/drain contacts by, for example, providing more source/drain surface area upon which a metal contact can be formed. The semiconductor region 358 is illustrated as encompassing the portion of the fin 330 extending past the surface 308. That is, the semiconductor region 358 encompasses outer surfaces 388 of the fin 330, the outer surface 388 comprising the surfaces of the sidewalls of the fin 330 extending past the surface 308 and a surface of an end 382 of the fin 330. In other embodiments, the semiconductor region 358 encompasses less than all of the outer surface 388 of the fin 330. In still other embodiments, the semiconductor region 358 encompasses at least the end 382 of the fin 330. Further, the semiconductor region 358 can extend in a direction along the length 331 of the fin 330 the entire length of the source portion 324 of the fin 330 (as illustrated in
The semiconductor region 358 can be grown epitaxially with in situ doping of one or more p-type dopants (e.g., boron, indium, gallium). As used herein, the term “fin” can refer to either a fin with or without a semiconductor region positioned adjacent to the fin (e.g., 358). For example, the term “fin” can refer to either fin 330 or the combined structure of fin 330 plus the semiconductor region 358. In some embodiments, a contact is formed on a fin with no semiconductor region positioned between the contact and the fin. For example, in some embodiments, with reference to
Cross-sectional views 360, 370, and 380 illustrate a contact 354 contacting the semiconductor region 358. The contact 354 is not shown in
The contact metal layer 336 is positioned adjacent to the boride, indium, or gallium metal compound layer 328. The boride, indium, or gallium metal compound layer 328 and the contact metal layer 336 layer form a contact hole (or cavity) 362 in the dielectric layer 312 and the fill metal layer 340 at least partially fills the hole 362. In some embodiments, the contact 354 further comprises a barrier layer positioned between the contact metal layer 336 and the fill metal layer 340.
A portion 352 of the boride, indium, or gallium metal compound layer 328 is positioned adjacent to the semiconductor region 358 and portions 356 of the boride, indium, or gallium metal compound layer 328 are not positioned adjacent to the semiconductor region 358. The portions 356 of the boride, indium, or gallium metal compound layer 328 can be positioned adjacent to a dielectric layer (such as dielectric layer 312 as illustrated in
In some embodiments, a silicide layer 329 is located in a portion of the semiconductor region 358 (or the fin 330 if there is no semiconductor region 358) positioned adjacent to the boride, indium, or gallium metal compound layer 328. The silicide layer 329 can be formed in the same manner as silicide layer 129, as described above, and have a similar thickness as the silicide layer 129 (less than 3 nm in some embodiments, and less than 1 nm in other embodiments).
The FinFETs 220 and 320 are non-planar in that the fins (230, 330) extend upwards from the surface (208, 308) of the substrate (216, 316). As the gates (222, 322) of the FinFETs 220 and 320 encompass three sides of a fin, the FinFETs can be considered tri-gate transistors.
The source region 435 comprises a source semiconductor region (or layer) 439 (shown in
The gate 442 controls the flow of current through a channel region from the source region 435 to the drain region 437 via channel regions of transistor 420. The channel regions are created by the gate 442 encompassing the semiconductor layers 430. The gate 422 comprises a gate electrode 463, gate layers 464, gate dielectric layers 466, a gate spacer 468, and cavity spacers 469. The gate spacer 468 and cavity spacers 469 isolate the gate stack (e.g., gate electrode 463, gate layers 464, and gate dielectric layers 466) from adjacent features. The semiconductor layers 430 are positioned between adjacent gate layers 464 and a gate dielectric layer 466 is positioned between a semiconductor layer 430 and a gate layer 464.
In the GAAFET embodiment illustrated in
Cross-sectional views 450 and 460 illustrate a contact 454 contacting the source semiconductor region 439. The contact 454 is not shown in
The contact metal layer 436 is positioned adjacent to the boride, indium, or gallium metal compound layer 428. The boride, indium, or gallium metal compound layer 428 and the contact metal layer 436 layer form a contact hole (or cavity) 465 in the dielectric layer 412 and the fill metal layer 440 at least partially fills the hole 465. In some embodiments, the contact 454 comprises a barrier layer positioned between the contact metal layer 436 and the fill metal layer 440.
In some embodiments, a silicide layer 429 is located in a portion of the source semiconductor region 439 positioned adjacent to the boride, indium, or gallium metal compound layer 428 after processing is complete. The silicide layer 429 can be formed in the same manner as silicide layer 129, as described above, and have a similar thickness as the silicide layer 129 (less than 3 nm in some embodiments, and less than 1 nm in other embodiments).
The gate 542 controls the flow of current through multiple channel regions from source portions 564 of the semiconductor layers 530 to drain portions 566 of the semiconductor layers 530. The channel regions of the transistor 520 are formed by the gate 522 encompassing a portion of the individual semiconductor layers 530. The semiconductor layers 530 are located above and separate from the substrate 516 and are substantially parallel to the surface 508 of the substrate 516.
The source region 535 comprises a source semiconductor region 558 (shown in FIGS. but not
The gate 522 comprises a gate electrode 563, gate layers 571, gate dielectric layers 567, a gate spacer 568, and cavity spacers 569. The gate spacer 568 and cavity spacers 569 isolate the gate stack (e.g., gate electrode 563, gate layers 571, and gate dielectric layers 567) from adjacent features. The channel portions of the semiconductor layers 530 are positioned between adjacent gate layers 571 and a gate dielectric layer 567 is positioned between a semiconductor layer 530 and a gate layer 571.
Cross-sectional views 550, 560, and 570 illustrate a semiconductor region 558 positioned adjacent to the source portions 564 of the semiconductor layers 530. The source semiconductor region 558 can aid in the formation of low resistance source/drain contacts by, for example, providing more source/drain surface area upon which a metal contact can be formed. The source semiconductor region 558 is illustrated as encompassing the source portions 564 of the semiconductor layers 530. That is, the source semiconductor region 558 encompasses the top, bottom, and side surfaces 588 of the semiconductor layers 530 (as viewed in the cross-sectional views 5C-5D). Further, the semiconductor region 558 can extend along all (as illustrated in FIG. or a portion of the source portion 564 of the semiconductor layers 530. The semiconductor region 558 can be grown epitaxially with in situ doping of one or more p-type dopants (e.g., boron, indium, gallium).
Cross-sectional views 550, 560, and 570 further illustrate a contact 554 contacting the source semiconductor region 558. The contact 554 is not shown in
A portion 552 of the boride, indium, or gallium metal compound layer 528 is positioned adjacent to the source semiconductor region 558 and a portion 556 of boride, indium, or gallium metal compound layer 528 is not positioned adjacent to the source semiconductor region 558. The portion of the boride, indium, or gallium metal compound layer 528 not positioned adjacent to the source semiconductor region 558 can be positioned adjacent to a dielectric layer (such as dielectric layer 512 as illustrated in
In some embodiments, a silicide layer 529 is located in a portion of the semiconductor region 558 positioned adjacent to the boride, indium, or gallium metal compound layer 528 after completion of processing. The silicide layer 529 can be formed in the same manner as silicide layer 129, as described above, and have a similar thickness as the silicide layer 129 (less than 5 nm in some embodiments, and less than 1 nm in other embodiments). For ease of illustration, the silicide 529 is only shown in the cross-sectional view of
The transistors 420 and 520 are non-planar in that the semiconductor layers (430, 530) are located above and are separate from the substrate (416, 516). The transistors 420 and 520 are considered gate-all-around transistors as the gate (422, 522) the channel portion of the semiconductor layers (430, 530).
GAAFETs can be alternatively referred to as nanowire or nanoribbon transistors, depending on a width (e.g., 468, 568) of the semiconductor layer (e.g., 330, 530) extending through the gate (e.g., 422, 522) relative to the thickness of the semiconductor layer. For example, as the width 448 of the semiconductor layer 430 in
Although
The various layers, regions, contacts, transistors, and other structures described or referenced herein can comprise various materials as follows. The bulk region of a substrate upon which transistors are fabricated and to which a contact comprising a boride, indium, or gallium metal compound layer can contacts the source/drain regions of the transistors (e.g., substrate 116, 216, 316, 416, 516, 616) can comprise a semiconductor comprising silicon (e.g., bulk silicon, silicon-on-insulator (e.g., bulk silicon with a buried silicon dioxide layer)), silicon and germanium (e.g., silicon germanium), or another suitable semiconductor.
A fin (e.g., 230, 330, 630) of a FinFET, a source or drain semiconductor region (e.g., 239, 358, 439, 558, 658) or any of the semiconductor layers (e.g., 430, 530) positioned above the substrate and forming the channel regions of a GAAFET (GAAFET semiconductor layer) can comprise silicon, silicon and germanium, or another suitable semiconductor. A fin or a GAAFET semiconductor layer can comprise one or more p-type dopants, such as boron, indium, gallium, or another suitable p-type dopant. A fin or GAAFET semiconductor layer can comprise one or more different p-type dopants in different portions of the fin or GAAFET semiconductor layer. For example, the channel region of a fin or GAAFET semiconductor layer can comprise one or more different dopants than source portions or drain portions of the fin or GAAFET semiconductor layer.
A source or drain semiconductor region (e.g., 239, 358, 439, 558, 658) can comprise one or more p-type dopants, such as boron, indium, gallium, or another suitable p-type dopant. In some embodiments, the source semiconductor layer and the drain semiconductor region can be epitaxially grown. The p-type dopants can be introduced via in situ doping in epitaxially grown source or drain semiconductor regions.
The transistors to which contacts comprising a boride, indium, or gallium metal compound layer are PMOS devices (a MOSFET with p-type source/drain regions). As such, the source/drain regions to which contacts comprising a boride, indium, or gallium metal compound contact (e.g., source/drain regions 104, 106, source semiconductor regions 239, 358, 439, 558, 658) are heavily doped with at least one p-type dopant, such as boron, indium, or gallium.
In embodiments where the boride, indium, or gallium metal compound layer (e.g., layer 128, 228, 328, 428, 528) is a boride metal compound layer, the boride metal compound layer comprises boron and a metal, such as boron and cobalt (CoB, cobalt boride), boron and lanthanum (e.g., LaB6, lanthanum hexaboride), boron and nickel (e.g., Ni2B, nickel boride), boron and tantalum (e.g., TaB, tantalum boride), boron and tungsten (e.g., WB, tungsten boride), boron and zirconium (ZrB2, zirconium boride), or other suitable boride metal compound.
In embodiments where the boride, indium, or gallium metal compound layer is an indium metal compound layer, the indium metal compound layer comprises indium and one or more other elements, such as indium and antimony (e.g., InSb, indium antimonide); indium, gallium, and nitrogen (e.g., InGaN, indium gallium nitride); or another suitable indium metal compound.
In embodiments where the boride, indium, or gallium metal compound layer is a gallium metal compound layer, the gallium metal compound layer comprises gallium and one or more other elements, such as gallium and antimony (e.g., GaSb, gallium antimonide); gallium, indium and nitrogen (e.g., InGaN, indium gallium nitride); gallium and nitrogen (GaN, gallium nitride), or another suitable gallium metal compound. In some embodiments, the thickness of a boride, indium, or gallium metal compound layer is in the range of 0.5-2.0 nm.
Although
In some embodiments, the peak concentration of boron, indium, or gallium in the boride, indium, or gallium metal compound layer, even after completion of BEOL processing is 1×1022 cm−3 or greater. This peak concentration is greater than the peak concentration of p-type dopants (e.g., boron, indium, gallium) in the source/drain regions prior to contact formation, which can be on the order of 1021 cm−3. As discussed previously, the boron, indium, or gallium in the boride, indium, or gallium metal compound layer can diffuse into the source/drain region due to the high-temperature processing steps that occur in a semiconductor manufacturing process after contact formation. Thus, a pile-up of boron, indium, or gallium can occur at the boride, indium, or gallium metal compound layer-source/drain region interface after BEOL processing in which the boron, indium, or gallium concentration in the source/drain increases in a direction from the interior of the source/drain toward the boride, indium, or gallium metal compound layer-source/drain region interface.
Contact metal layer 136 can comprise titanium, tantalum, hafnium, zirconium, niobium, or other suitable metal. Fill metal layer 140 can comprise tungsten, cobalt, titanium, gold, aluminum, molybdenum, chromium, nickel, or other suitable metal.
The isolation regions isolating adjacent transistors from each other (e.g., 114, 214, 314, 414, 514, 614) can comprise silicon dioxide (SiO2, a material comprising silicon and oxide) or any other suitable oxide, nitride, or any other material suitable for providing electrical isolation between adjacent transistors. The isolation regions isolating source contact metals or drain contact metals from the substrate or other contact metals (e.g., 112, 212, 312, 412, 512, 612) can be a suitable nitride or oxide, such as silicon dioxide (SiO2), carbon-doped silicon dioxide (C-doped SiO2, also known as CDO or organosilicate glass, which is a material that comprises silicon, oxygen, and carbon), fluorine-doped silicon dioxide (F-doped SiO2, also known as fluorosilicate glass, which is a material that comprises fluorine, silicon, and oxygen), hydrogen-doped silicon dioxide (H-doped SiO2, which is a material that comprises silicon, oxygen, and hydrogen), or silicon nitride (Si3N4, which is a material that comprises silicon and nitrogen).
The gate dielectric layers (e.g., 166, 266, 366, 466, 567) can comprise any of the gate dielectric materials discussed below in regard to
In some embodiments, one or more barrier layers can be positioned between a metal contact layer and a fill metal layer. The barrier layer can reduce the amount of metal that diffuses from the fill metal layer to a source/drain region and/or prevent or reduce oxidation of the contact metal layer between formation of the contact metal layer and formation of the fill metal layer. A barrier layer can comprise cobalt (Co), ruthenium (Ru), tantalum (Ta), tantalum nitride (which is a material comprising titanium and nitrogen (e.g., TaN, Ta2N, Ta3N5)), indium oxide (In2O3, which is a material that comprises indium and oxygen), tungsten nitride (which is a material that comprises tungsten and nitrogen (e.g., W2N, WN, WN2), titanium nitride (TiN, which is a material that comprises titanium and nitrogen), or other suitable material.
The contacts described herein can be used in any processor unit or integrated circuit component described or referenced herein. An integrated circuit component comprising any of the contact described herein can be attached to a printed circuit board (motherboard, mainboard). In some embodiments, one or more additional integrated circuit components or other components (e.g., battery, antenna) can be attached to the printed circuit board. In some embodiments, the printed circuit board and the integrated circuit component can be located in a computing device that comprises a housing that encloses the printed circuit board and the integrated circuit component.
The integrated circuit device 900 may include one or more device layers 904 disposed on the die substrate 902. The device layer 904 may include features of one or more transistors 940 (e.g., metal oxide semiconductor field-effect transistors (MOSFETs)) formed on the die substrate 902. The transistors 940 may include, for example, one or more source and/or drain (S/D) regions 920, a gate 922 to control current flow between the S/D regions 920, and one or more S/D contacts 924 to route electrical signals to/from the S/D regions 920. The transistors 940 may include additional features not depicted for the sake of clarity, such as device isolation regions, gate contacts, and the like. The transistors 940 are not limited to the type and configuration depicted in
A transistor 940 may include a gate 922 formed of at least two layers, a gate dielectric and a gate electrode. The gate dielectric may include one layer or a stack of layers. The one or more layers may include silicon oxide, silicon dioxide, silicon carbide, and/or a high-k dielectric material.
The high-k dielectric material may include elements such as hafnium, silicon, oxygen, titanium, tantalum, lanthanum, aluminum, zirconium, barium, strontium, yttrium, lead, scandium, niobium, and zinc. Examples of high-k materials that may be used in the gate dielectric include, but are not limited to, hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. In some embodiments, an annealing process may be carried out on the gate dielectric to improve its quality when a high-k material is used.
The gate electrode may be formed on the gate dielectric and may include at least one p-type work function metal or p-type work function metal, depending on whether the transistor 940 is to be a p-type metal oxide semiconductor (PMOS) or a p-type metal oxide semiconductor (NMOS) transistor. In some implementations, the gate electrode may consist of a stack of two or more metal layers, where one or more metal layers are work function metal layers and at least one metal layer is a fill metal layer. Further metal layers may be included for other purposes, such as a barrier layer.
For a PMOS transistor, metals that may be used for the gate electrode include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides (e.g., ruthenium oxide), and any of the metals discussed below with reference to an NMOS transistor (e.g., for work function tuning). For an NMOS transistor, metals that may be used for the gate electrode include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys of these metals, carbides of these metals (e.g., hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide), and any of the metals discussed above with reference to a PMOS transistor (e.g., for work function tuning).
In some embodiments, when viewed as a cross-section of the transistor 940 along the source-channel-drain direction, the gate electrode may consist of a U-shaped structure that includes a bottom portion substantially parallel to the surface of the die substrate 902 and two sidewall portions that are substantially perpendicular to the top surface of the die substrate 902. In other embodiments, at least one of the metal layers that form the gate electrode may simply be a planar layer that is substantially parallel to the top surface of the die substrate 902 and does not include sidewall portions substantially perpendicular to the top surface of the die substrate 902. In other embodiments, the gate electrode may consist of a combination of U-shaped structures and planar, non-U-shaped structures. For example, the gate electrode may consist of one or more U-shaped metal layers formed atop one or more planar, non-U-shaped layers.
In some embodiments, a pair of sidewall spacers may be formed on opposing sides of the gate stack to bracket the gate stack. The sidewall spacers may be formed from materials such as silicon nitride, silicon oxide, silicon carbide, silicon nitride doped with carbon, and silicon oxynitride. Processes for forming sidewall spacers are well known in the art and generally include deposition and etching process steps. In some embodiments, a plurality of spacer pairs may be used; for instance, two pairs, three pairs, or four pairs of sidewall spacers may be formed on opposing sides of the gate stack.
The S/D regions 920 may be formed within the die substrate 902 adjacent to the gate 922 of individual transistors 940. The S/D regions 920 may be formed using an implantation/diffusion process or an etching/deposition process, for example. In the former process, dopants such as boron, aluminum, antimony, phosphorous, or arsenic may be ion-implanted into the die substrate 902 to form the S/D regions 920. An annealing process that activates the dopants and causes them to diffuse farther into the die substrate 902 may follow the ion-implantation process. In the latter process, the die substrate 902 may first be etched to form recesses at the locations of the S/D regions 920. An epitaxial deposition process may then be carried out to fill the recesses with material that is used to fabricate the S/D regions 920. In some implementations, the S/D regions 920 may be fabricated using a silicon alloy such as silicon germanium or silicon carbide. In some embodiments, the epitaxially deposited silicon alloy may be doped in situ with dopants such as boron, arsenic, or phosphorous. In some embodiments, the S/D regions 920 may be formed using one or more alternate semiconductor materials such as germanium or a group III-V material or alloy. In further embodiments, one or more layers of metal and/or metal alloys may be used to form the S/D regions 920.
Electrical signals, such as power and/or input/output (I/O) signals, may be routed to and/or from the devices (e.g., transistors 940) of the device layer 904 through one or more interconnect layers disposed on the device layer 904 (illustrated in
The interconnect structures 928 may be arranged within the interconnect layers 906-910 to route electrical signals according to a wide variety of designs; in particular, the arrangement is not limited to the particular configuration of interconnect structures 928 depicted in
In some embodiments, the interconnect structures 928 may include lines 928a and/or vias 928b filled with an electrically conductive material such as a metal. The lines 928a may be arranged to route electrical signals in a direction of a plane that is substantially parallel with a surface of the die substrate 902 upon which the device layer 904 is formed. For example, the lines 928a may route electrical signals in a direction in and out of the page and/or in a direction across the page from the perspective of
The interconnect layers 906-910 may include a dielectric material 926 disposed between the interconnect structures 928, as shown in
A first interconnect layer 906 (referred to as Metal 1 or “M1”) may be formed directly on the device layer 904. In some embodiments, the first interconnect layer 906 may include lines 928a and/or vias 928b, as shown. The lines 928a of the first interconnect layer 906 may be coupled with contacts (e.g., the S/D contacts 924) of the device layer 904. The vias 928b of the first interconnect layer 906 may be coupled with the lines 928a of a second interconnect layer 908.
The second interconnect layer 908 (referred to as Metal 2 or “M2”) may be formed directly on the first interconnect layer 906. In some embodiments, the second interconnect layer 908 may include via 928b to couple the lines 928 of the second interconnect layer 908 with the lines 928a of a third interconnect layer 910. Although the lines 928a and the vias 928b are structurally delineated with a line within individual interconnect layers for the sake of clarity, the lines 928a and the vias 928b may be structurally and/or materially contiguous (e.g., simultaneously filled during a dual-damascene process) in some embodiments.
The third interconnect layer 910 (referred to as Metal 3 or “M3”) (and additional interconnect layers, as desired) may be formed in succession on the second interconnect layer 908 according to similar techniques and configurations described in connection with the second interconnect layer 908 or the first interconnect layer 906. In some embodiments, the interconnect layers that are “higher up” in the metallization stack 919 in the integrated circuit device 900 (i.e., farther away from the device layer 904) may be thicker that the interconnect layers that are lower in the metallization stack 919, with lines 928a and vias 928b in the higher interconnect layers being thicker than those in the lower interconnect layers.
The integrated circuit device 900 may include a solder resist material 934 (e.g., polyimide or similar material) and one or more conductive contacts 936 formed on the interconnect layers 906-910. In
In some embodiments in which the integrated circuit device 900 is a double-sided die, the integrated circuit device 900 may include another metallization stack (not shown) on the opposite side of the device layer(s) 904. This metallization stack may include multiple interconnect layers as discussed above with reference to the interconnect layers 906-910, to provide conductive pathways (e.g., including conductive lines and vias) between the device layer(s) 904 and additional conductive contacts (not shown) on the opposite side of the integrated circuit device 900 from the conductive contacts 936.
In other embodiments in which the integrated circuit device 900 is a double-sided die, the integrated circuit device 900 may include one or more through silicon vias (TSVs) through the die substrate 902; these TSVs may make contact with the device layer(s) 904, and may provide conductive pathways between the device layer(s) 904 and additional conductive contacts (not shown) on the opposite side of the integrated circuit device 900 from the conductive contacts 936. In some embodiments, TSVs extending through the substrate can be used for routing power and ground signals from conductive contacts on the opposite side of the integrated circuit device 900 from the conductive contacts 936 to the transistors 940 and any other components integrated into the die 900, and the metallization stack 919 can be used to route I/O signals from the conductive contacts 936 to transistors 940 and any other components integrated into the die 900.
Multiple integrated circuit devices 900 may be stacked with one or more TSVs in the individual stacked devices providing connection between one of the devices to any of the other devices in the stack. For example, one or more high-bandwidth memory (HBM) integrated circuit dies can be stacked on top of a base integrated circuit die and TSVs in the HBM dies can provide connection between the individual HBM and the base integrated circuit die. Conductive contacts can provide additional connections between adjacent integrated circuit dies in the stack. In some embodiments, the conductive contacts can be fin-pitch solder bumps (microbumps).
In some embodiments, the circuit board 1002 may be a printed circuit board (PCB) including multiple metal (or interconnect) layers separated from one another by layers of dielectric material and interconnected by electrically conductive vias. The individual metal layers comprise conductive traces. Any one or more of the metal layers may be formed in a desired circuit pattern to route electrical signals (optionally in conjunction with other metal layers) between the components coupled to the circuit board 1002. In other embodiments, the circuit board 1002 may be a non-PCB substrate. The integrated circuit device assembly 1000 illustrated in
The package-on-interposer structure 1036 may include an integrated circuit component 1020 coupled to an interposer 1004 by coupling components 1018. The coupling components 1018 may take any suitable form for the application, such as the forms discussed above with reference to the coupling components 1016. Although a single integrated circuit component 1020 is shown in
The integrated circuit component 1020 may be a packaged or unpacked integrated circuit product that includes one or more integrated circuit dies (e.g., the die 802 of
In embodiments where the integrated circuit component 1020 comprises multiple integrated circuit dies, they dies can be of the same type (a homogeneous multi-die integrated circuit component) or of two or more different types (a heterogeneous multi-die integrated circuit component). A multi-die integrated circuit component can be referred to as a multi-chip package (MCP) or multi-chip module (MCM).
In addition to comprising one or more processor units, the integrated circuit component 1020 can comprise additional components, such as embedded DRAM, stacked high bandwidth memory (HBM), shared cache memories, input/output (I/O) controllers, or memory controllers. Any of these additional components can be located on the same integrated circuit die as a processor unit, or on one or more integrated circuit dies separate from the integrated circuit dies comprising the processor units. These separate integrated circuit dies can be referred to as “chiplets”. In embodiments where an integrated circuit component comprises multiple integrated circuit dies, interconnections between dies can be provided by the package substrate, one or more silicon interposers, one or more silicon bridges embedded in the package substrate (such as Intel® embedded multi-die interconnect bridges (EMIBs)), or combinations thereof.
Generally, the interposer 1004 may spread connections to a wider pitch or reroute a connection to a different connection. For example, the interposer 1004 may couple the integrated circuit component 1020 to a set of ball grid array (BGA) conductive contacts of the coupling components 1016 for coupling to the circuit board 1002. In the embodiment illustrated in FIG. the integrated circuit component 1020 and the circuit board 1002 are attached to opposing sides of the interposer 1004; in other embodiments, the integrated circuit component 1020 and the circuit board 1002 may be attached to a same side of the interposer 1004. In some embodiments, three or more components may be interconnected by way of the interposer 1004.
In some embodiments, the interposer 1004 may be formed as a PCB, including multiple metal layers separated from one another by layers of dielectric material and interconnected by electrically conductive vias. In some embodiments, the interposer 1004 may be formed of an epoxy resin, a fiberglass-reinforced epoxy resin, an epoxy resin with inorganic fillers, a ceramic material, or a polymer material such as polyimide. In some embodiments, the interposer 1004 may be formed of alternate rigid or flexible materials that may include the same materials described above for use in a semiconductor substrate, such as silicon, germanium, and other group III-V and group IV materials. The interposer 1004 may include metal interconnects 1008 and vias 1010, including but not limited to through hole vias 1010-1 (that extend from a first face 1050 of the interposer 1004 to a second face 1054 of the interposer 1004), blind vias 1010-2 (that extend from the first or second faces 1050 or 1054 of the interposer 1004 to an internal metal layer), and buried vias 1010-3 (that connect internal metal layers).
In some embodiments, the interposer 1004 can comprise a silicon interposer. Through silicon vias (TSV) extending through the silicon interposer can connect connections on a first face of a silicon interposer to an opposing second face of the silicon interposer. In some embodiments, an interposer 1004 comprising a silicon interposer can further comprise one or more routing layers to route connections on a first face of the interposer 1004 to an opposing second face of the interposer 1004.
The interposer 1004 may further include embedded devices 1014, including both passive and active devices. Such devices may include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, electrostatic discharge (ESD) devices, and memory devices. More complex devices such as radio frequency devices, power amplifiers, power management devices, antennas, arrays, sensors, and microelectromechanical systems (MEMS) devices may also be formed on the interposer 1004. The package-on-interposer structure 1036 may take the form of any of the package-on-interposer structures known in the art. In embodiments where the interposer is a non-printed circuit board
The integrated circuit device assembly 1000 may include an integrated circuit component 1024 coupled to the first face 1040 of the circuit board 1002 by coupling components 1022. The coupling components 1022 may take the form of any of the embodiments discussed above with reference to the coupling components 1016, and the integrated circuit component 1024 may take the form of any of the embodiments discussed above with reference to the integrated circuit component 1020.
The integrated circuit device assembly 1000 illustrated in
Additionally, in various embodiments, the electrical device 1100 may not include one or more of the components illustrated in
The electrical device 1100 may include one or more processor units 1102 (e.g., one or more processor units). As used herein, the terms “processor unit”, “processing unit” or “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory. The processor unit 1102 may include one or more digital signal processors (DSPs), application-specific integrated circuits (ASICs), central processing units (CPUs), graphics processing units (GPUs), general-purpose GPUs (GPGPUs), accelerated processing units (APUs), field-programmable gate arrays (FPGAs), neural network processing units (NPUs), data processor units (DPUs), accelerators (e.g., graphics accelerator, compression accelerator, artificial intelligence accelerator), controller cryptoprocessors (specialized processors that execute cryptographic algorithms within hardware), server processors, controllers, or any other suitable type of processor units. As such, the processor unit can be referred to as an XPU (or xPU).
The electrical device 1100 may include a memory 1104, which may itself include one or more memory devices such as volatile memory (e.g., dynamic random access memory (DRAM), static random-access memory (SRAM)), non-volatile memory (e.g., read-only memory (ROM), flash memory, chalcogenide-based phase-change non-voltage memories), solid state memory, and/or a hard drive. In some embodiments, the memory 1104 may include memory that is located on the same integrated circuit die as the processor unit 1102. This memory may be used as cache memory (e.g., Level 1 (L1), Level 2 (L2), Level 3 (L3), Level 4 (L4), Last Level Cache (LLC)) and may include embedded dynamic random access memory (eDRAM) or spin transfer torque magnetic random access memory (STT-MRAM).
In some embodiments, the electrical device 1100 can comprise one or more processor units 1102 that are heterogeneous or asymmetric to another processor unit 1102 in the electrical device 1100. There can be a variety of differences between the processing units 1102 in a system in terms of a spectrum of metrics of merit including architectural, microarchitectural, thermal, power consumption characteristics, and the like. These differences can effectively manifest themselves as asymmetry and heterogeneity among the processor units 1102 in the electrical device 1100.
In some embodiments, the electrical device 1100 may include a communication component 1112 (e.g., one or more communication components). For example, the communication component 1112 can manage wireless communications for the transfer of data to and from the electrical device 1100. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a nonsolid medium. The term “wireless” does not imply that the associated devices do not contain any wires, although in some embodiments they might not.
The communication component 1112 may implement any of a number of wireless standards or protocols, including but not limited to Institute for Electrical and Electronic Engineers (IEEE) standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards (e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE) project along with any amendments, updates, and/or revisions (e.g., advanced LTE project, ultra mobile broadband (UMB) project (also referred to as “3GPP2”), etc.). IEEE 802.16 compatible Broadband Wireless Access (BWA) networks are generally referred to as WiMAX networks, an acronym that stands for Worldwide Interoperability for Microwave Access, which is a certification mark for products that pass conformity and interoperability tests for the IEEE 802.16 standards. The communication component 1112 may operate in accordance with a Global System for Mobile Communication (GSM), General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network. The communication component 1112 may operate in accordance with Enhanced Data for GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN (E-UTRAN). The communication component 1112 may operate in accordance with Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Digital Enhanced Cordless Telecommunications (DECT), Evolution-Data Optimized (EV-DO), and derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The communication component 1112 may operate in accordance with other wireless protocols in other embodiments. The electrical device 1100 may include an antenna 1122 to facilitate wireless communications and/or to receive other wireless communications (such as AM or FM radio transmissions).
In some embodiments, the communication component 1112 may manage wired communications, such as electrical, optical, or any other suitable communication protocols (e.g., IEEE 802.3 Ethernet standards). As noted above, the communication component 1112 may include multiple communication components. For instance, a first communication component 1112 may be dedicated to shorter-range wireless communications such as Wi-Fi or Bluetooth, and a second communication component 1112 may be dedicated to longer-range wireless communications such as global positioning system (GPS), EDGE, GPRS, CDMA, WiMAX, LTE, EV-DO, or others. In some embodiments, a first communication component 1112 may be dedicated to wireless communications, and a second communication component 1112 may be dedicated to wired communications.
The electrical device 1100 may include battery/power circuitry 1114. The battery/power circuitry 1114 may include one or more energy storage devices (e.g., batteries or capacitors) and/or circuitry for coupling components of the electrical device 1100 to an energy source separate from the electrical device 1100 (e.g., AC line power).
The electrical device 1100 may include a display device 1106 (or corresponding interface circuitry, as discussed above). The display device 1106 may include one or more embedded or wired or wirelessly connected external visual indicators, such as a heads-up display, a computer monitor, a projector, a touchscreen display, a liquid crystal display (LCD), a light-emitting diode display, or a flat panel display.
The electrical device 1100 may include an audio output device 1108 (or corresponding interface circuitry, as discussed above). The audio output device 1108 may include any embedded or wired or wirelessly connected external device that generates an audible indicator, such speakers, headsets, or earbuds.
The electrical device 1100 may include an audio input device 1124 (or corresponding interface circuitry, as discussed above). The audio input device 1124 may include any embedded or wired or wirelessly connected device that generates a signal representative of a sound, such as microphones, microphone arrays, or digital instruments (e.g., instruments having a musical instrument digital interface (MIDI) output). The electrical device 1100 may include a Global Navigation Satellite System (GNSS) device 1118 (or corresponding interface circuitry, as discussed above), such as a Global Positioning System (GPS) device. The GNSS device 1118 may be in communication with a satellite-based system and may determine a geolocation of the electrical device 1100 based on information received from one or more GNSS satellites, as known in the art.
The electrical device 1100 may include an other output device 1110 (or corresponding interface circuitry, as discussed above). Examples of the other output device 1110 may include an audio codec, a video codec, a printer, a wired or wireless transmitter for providing information to other devices, or an additional storage device.
The electrical device 1100 may include an other input device 1120 (or corresponding interface circuitry, as discussed above). Examples of the other input device 1120 may include an accelerometer, a gyroscope, a compass, an image capture device (e.g., monoscopic or stereoscopic camera), a trackball, a trackpad, a touchpad, a keyboard, a cursor control device such as a mouse, a stylus, a touchscreen, proximity sensor, microphone, a bar code reader, a Quick Response (QR) code reader, electrocardiogram (ECG) sensor, PPG (photoplethysmogram) sensor, galvanic skin response sensor, any other sensor, or a radio frequency identification (RFID) reader.
The electrical device 1100 may have any desired form factor, such as a hand-held or mobile electrical device (e.g., a cell phone, a smart phone, a mobile internet device, a music player, a tablet computer, a laptop computer, a 2-in-1 convertible computer, a portable all-in-one computer, a netbook computer, an ultrabook computer, a personal digital assistant (PDA), an ultra mobile personal computer, a portable gaming console, etc.), a desktop electrical device, a server, a rack-level computing solution (e.g., blade, tray or sled computing systems), a workstation or other networked computing component, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a stationary gaming console, smart television, a vehicle control unit, a digital camera, a digital video recorder, a wearable electrical device or an embedded computing system (e.g., computing systems that are part of a vehicle, smart home appliance, consumer electronics product or equipment, manufacturing equipment). In some embodiments, the electrical device 1100 may be any other electronic device that processes data. In some embodiments, the electrical device 1100 may comprise multiple discrete physical components. Given the range of devices that the electrical device 1100 can be manifested as in various embodiments, in some embodiments, the electrical device 1100 can be referred to as a computing device or a computing system.
As used in this application and the claims, a list of items joined by the term “and/or” can mean any combination of the listed items. For example, the phrase “A, B and/or C” can mean A; B; C; A and B; A and C; B and C; or A, B and C. As used in this application and the claims, a list of items joined by the term “at least one of” can mean any combination of the listed terms. For example, the phrase “at least one of A, B or C” can mean A; B; C; A and B; A and C; B and C; or A, B, and C. Moreover, as used in this application and the claims, a list of items joined by the term “one or more of” can mean any combination of the listed terms. For example, the phrase “one or more of A, B and C” can mean A; B; C; A and B; A and C; B and C; or A, B, and C.
As used in this application and the claims, the phrase “individual of” or “respective of” following by a list of items recited or stated as having a trait, feature, etc. means that all of the items in the list possess the stated or recited trait, feature, etc. For example, the phrase “individual of A, B, or C, comprise a sidewall” or “respective of A, B, or C, comprise a sidewall” means that A comprises a sidewall, B comprises sidewall, and C comprises a sidewall.
The disclosed methods, apparatuses, and systems are not to be construed as limiting in any way. Instead, the present disclosure is directed toward all novel and nonobvious features and aspects of the various disclosed embodiments, alone and in various combinations and subcombinations with one another. The disclosed methods, apparatuses, and systems are not limited to any specific aspect or feature or combination thereof, nor do the disclosed embodiments require that any one or more specific advantages be present or problems be solved.
Theories of operation, scientific principles, or other theoretical descriptions presented herein in reference to the apparatuses or methods of this disclosure have been provided for the purposes of better understanding and are not intended to be limiting in scope. The apparatuses and methods in the appended claims are not limited to those apparatuses and methods that function in the manner described by such theories of operation.
Although the operations of some of the disclosed methods are described in a particular, sequential order for convenient presentation, it is to be understood that this manner of description encompasses rearrangement, unless a particular ordering is required by specific language set forth herein. For example, operations described sequentially may in some cases be rearranged or performed concurrently. Moreover, for the sake of simplicity, the attached figures may not show the various ways in which the disclosed methods can be used in conjunction with other methods.
The following examples pertain to additional embodiments of technologies disclosed herein.
Example 1 is an apparatus, comprising: a substrate; a p-type semiconductor region comprising a semiconductor and a first p-type dopant; a first layer comprising a second p-type dopant and an element, a first portion of the first layer positioned adjacent to the p-type semiconductor region and a second portion of the first layer not positioned adjacent to the p-type semiconductor region, the first p-type dopant being the same or different than the second p-type dopant; a second layer positioned adjacent to the first layer, the second layer comprising a first metal; and a third layer located on the second layer, the third layer comprising a second metal.
Example 2 comprises the apparatus of claim 1, wherein the p-type semiconductor region is part of the substrate and comprises a portion of a surface of the substrate.
Example 3 comprises the apparatus of claim 1, wherein the p-type semiconductor region is positioned adjacent to the substrate.
Example 4 comprises the apparatus of claim 1, further comprising a fin extending upwards from the substrate, the p-type semiconductor region comprising at least a portion of the fin.
Example 5 comprises the apparatus of claim 1, further comprising a fin extending upwards from the substrate, the p-type semiconductor region encompassing an end of the fin.
Example 6 comprises the apparatus of any one of claims 1-5, wherein the second p-type dopant is boron.
Example 7 comprises the apparatus of claim 6, wherein the element is cobalt.
Example 8 comprises the apparatus of claim 6, wherein the element is lanthanum.
Example 9 comprises the apparatus of claim 6, wherein the element is nickel.
Example 10 comprises the apparatus of claim 6, wherein the element is niobium.
Example 11 comprises the apparatus of claim 6, wherein the element is tantalum.
Example 12 comprises the apparatus of claim 6, wherein the element is tungsten.
Example 13 comprises the apparatus of claim 6, wherein the element is zirconium.
Example 14 comprises the apparatus of claim 6, wherein the element is titanium.
Example 15 comprises the apparatus of any one of claims 1-5, wherein the second p-type dopant is indium.
Example 16 comprises the apparatus of claim 15, wherein the element is antimony.
Example 17 comprises the apparatus of claim 15, wherein the first metal is gallium, the first layer further comprising nitrogen.
Example 18 comprises the apparatus of any one of claims 1-5, wherein the second p-type dopant is gallium.
Example 19 comprises the apparatus of claim 18, wherein the element is nitrogen.
Example 20 comprises the apparatus of claim 18, wherein the element is antimony.
Example 21 comprises the apparatus of claim 18, wherein the element is indium, the first layer further comprising nitrogen.
Example 22 comprises the apparatus any one of claims 1-21, wherein the first metal is titanium.
Example 23 comprises the apparatus any one of claims 1-21, wherein the first metal is tantalum, hafnium, zirconium, or niobium.
Example 24 comprises the apparatus any one of claims 1-23, wherein the second metal comprises tungsten.
Example 25 comprises the apparatus any one of claims 1-23, wherein the second metal comprises cobalt, titanium, gold, aluminum, molybdenum, chromium, or nickel.
Example 26 comprises the apparatus of any one of claims 1-25, wherein the element is a metal, at least two of the element, the first metal, and the second metal are the same.
Example 27 comprises the apparatus of any one of claims 1-25, wherein the element is a metal, at least two of the element, the first metal, and the second metal are different.
Example 28 comprises the apparatus of any one of claims 1-27, wherein a peak concentration of the second p-type dopant in the first layer exceeds 1.0×1022 cm−3.
Example 29 comprises the apparatus of any one of claims 1-27, wherein a peak concentration of the second p-type dopant in the first portion of the first layer exceeds 1.0×1022 cm−3 and a peak concentration of the second p-type dopant in the second portion of the first layer exceeds 1.0×1022 cm−3.
Example 30 comprises the apparatus of any one of claims 1-29, wherein a peak concentration of the second p-type dopant in the p-type semiconductor region is greater than 1.0×1022 cm−3.
Example 31 comprises the apparatus of any one of claims 1-30, wherein an atomic ratio of the second p-type dopant in the first layer is in the range of 5-80%.
Example 32 comprises the apparatus of any one of claims 1-30, wherein an atomic ratio of the second p-type dopant in the first layer is about 50%.
Example 33 comprises the apparatus of any one of claims 1-32, wherein the semiconductor comprises silicon.
Example 34 comprises the apparatus of any one of claims 1-32, wherein the semiconductor comprises silicon and germanium.
Example 35 comprises the apparatus of any one of claims 1-34, wherein a thickness of the first portion of the first layer is in a range of 0.5-2.0 nm.
Example 36 comprises the apparatus of any one of claims 1-35, wherein the second portion of the first layer comprises a sidewall substantially perpendicular to a surface of the substrate.
Example 37 comprises the apparatus of any one of claims 1-36, wherein a portion of the p-type semiconductor region positioned adjacent to the first portion of the first layer comprises the first metal.
Example 38 comprises the apparatus of claim 37, wherein a thickness of the portion of the p-type semiconductor region positioned adjacent to the first portion of the first layer comprising the first metal is about 3 nm or less.
Example 39 comprises the apparatus of claim 37, wherein a thickness of the portion of the p-type semiconductor region positioned adjacent to the first portion of the first layer comprising the first metal is about 1 nm or less.
Example 40 comprises the apparatus of any one of claims 1-36, wherein there is no first metal in the portion of the substrate positioned adjacent to the first portion of the first layer.
Example 41 comprises the apparatus of any one of claims 1-40, wherein a fourth layer is positioned between the second layer and third layer, the fourth layer comprising: cobalt; ruthenium; tantalum; tantalum and nitrogen; indium and oxygen; tungsten and nitrogen; or titanium and nitrogen.
Example 42 comprises the apparatus of any one of claims 1-41, wherein at least a portion of the second portion of the first layer is positioned adjacent to a dielectric layer comprising silicon and oxygen.
Example 43 comprises the apparatus of any one of claims 42, wherein the dielectric layer further comprises carbon, fluorine, or hydrogen.
Example 44 comprises the apparatus of any one of claims 1-43, wherein at least a portion of the second portion of the first layer is positioned adjacent to a dielectric layer comprising silicon and nitrogen.
Example 45 comprises an apparatus, comprising: a substrate comprising silicon; one or more first layers located above and separate from the substrate, the one or more first layers comprising silicon and a first p-type dopant; a second layer positioned adjacent to and encompassing the one or more first layers along at least a portion of a length of individual of the one or more first layers, the second layer comprising a semiconductor and the first p-type dopant; a third layer positioned adjacent to at least a portion of an outer surface of the second layer along at least a portion of a length of the second layer, the third layer comprising a second p-type dopant and an element, the length of individual of the first layers extending a direction parallel to a surface of the substrate, the length of the second layer extending in the direction, the first p-type dopant being the same or different than the second p-type dopant; a fourth layer positioned adjacent to the third layer, the second layer comprising a first metal; and a fifth layer located on the fourth layer, the third layer comprising a second metal.
Example 46 comprises the apparatus of claim 45, wherein the third layer encompasses a cross-sectional area of the second layer taken along a plane substantially perpendicular to the surface of the substrate.
Example 47 comprises the apparatus of claim 45, wherein a first portion of the third layer is positioned adjacent to at least the portion of the outer surface of the second layer along at least the portion of the length of the second layer, the third layer further comprising one or more second portions not positioned adjacent to the second layer.
Example 48 comprises the apparatus of claim 47, wherein the first portion of the third layer is physically separate from the one or more second portions of the third layer.
Example 49 comprises the apparatus of claim 47, where the third layer further comprises a bottom portion substantially perpendicular to the one or more second portions of the third layer.
Example 50 comprises the apparatus of any one of claims 45-49, further comprising: one or more sixth layers comprising a third metal, the one or more sixth layers stacked vertically with respect to the surface of the substrate, individual of the sixth layers positioned between adjacent first layers along a portion of the length of the first layers not encompassed by the second layer; and one or more dielectric layers, individual of the dielectric layers comprising oxygen, individual of the dielectric layers positioned between one of the first layers and one of the sixth layers.
Example 51 comprises the apparatus of claim 50, wherein individual of the dielectric layers further comprise: silicon; hafnium; hafnium and silicon; lanthanum; lanthanum and aluminum; zirconium; zirconium and silicon; tantalum; titanium; barium, strontium, titanium; barium and titanium; strontium and titanium; yttrium; aluminum; or lead, scandium, and tantalum.
Example 52 comprises the apparatus of any one of claims 45-51, the one or more first layers stacked vertically with respect to a surface of the substrate.
Example 53 comprises the apparatus of any one of claims 45-52, wherein the second p-type dopant is boron.
Example 54 comprises the apparatus of claim 53, wherein the element is cobalt.
Example 55 comprises the apparatus of claim 53, wherein the element is lanthanum.
Example 56 comprises the apparatus of claim 53, wherein the element is nickel.
Example 57 comprises the apparatus of claim 53, wherein the element is niobium.
Example 58 comprises the apparatus of claim 53, wherein the element is tantalum.
Example 59 comprises the apparatus of claim 53, wherein the element is tungsten.
Example 60 comprises the apparatus of claim 53, wherein the element is zirconium.
Example 61 comprises the apparatus of claim 53, wherein the element is titanium.
Example 62 comprises the apparatus of any one of claims 45-52, wherein the second p-type dopant is indium.
Example 63 comprises the apparatus of claim 62, wherein the element is antimony.
Example 64 comprises the apparatus of claim 62, wherein the element is gallium, the one or more first layers further comprising nitrogen.
Example 65 comprises the apparatus of any one of claims 45-52, wherein the second p-type dopant is gallium.
Example 66 comprises the apparatus of claim 65, wherein the element is nitrogen.
Example 67 comprises the apparatus of claim 65, wherein the element is antimony.
Example 68 comprises the apparatus of claim 65, wherein the element in indium, the one or more first layers further comprising nitrogen.
Example 69 comprises the apparatus any one of claims 45-67, wherein the first metal is titanium.
Example 70 comprises the apparatus any one of claims 45-67, wherein the first metal is tantalum, hafnium, zirconium, or niobium.
Example 71 comprises the apparatus any one of claims 45-70, wherein the second metal comprises tungsten.
Example 72 comprises the apparatus any one of claims 45-70, wherein the second metal comprises cobalt, titanium, gold, aluminum, molybdenum, chromium, or nickel.
Example 73 comprises the apparatus of any one of claims 45-72, wherein the element is a metal, at least two of the element, the first metal, and the second metal are the same.
Example 74 comprises the apparatus of any one of claims 45-72, wherein the element is a metal, at least two of the element, the first metal, and the second metal are different.
Example 75 comprises the apparatus of any one of claims 45-74, wherein a peak concentration of the second p-type dopant in the third layer exceeds 1.0×1022 cm−3.
Example 76 comprises the apparatus of any one of claims 45-74, wherein a peak concentration of the second p-type dopant in the second layer is greater than 1.0×1022 cm−3.
Example 77 comprises the apparatus of any one of claims 1-76, wherein an atomic ratio of the second p-type dopant in the second layer is in the range of 5-80%.
Example 78 comprises the apparatus of any one of claims 1-76, wherein an atomic ratio of the second p-type dopant in the second layer is about 50%.
Example 79 comprises the apparatus of any one of claims 45-78, wherein the semiconductor comprises silicon.
Example 80 comprises the apparatus of any one of claims 45-78, wherein the semiconductor comprises silicon and germanium.
Example 81 comprises the apparatus of any one of claims 45-80, wherein a thickness of the second layer is in a range of 0.5-2.0 nm.
Example 82 comprises the apparatus of any one of claims 45-81, wherein the second layer comprises one or more sidewall portions.
Example 83 comprises the apparatus of any one of claims 45-82, wherein a fourth layer is positioned between the second layer and third layer, the fourth layer comprising: cobalt; ruthenium; tantalum; tantalum and nitrogen; indium and oxygen; tungsten and nitrogen; or titanium and nitrogen.
Example 84 comprises the apparatus of any one of claims 45-83, wherein at least a portion of the second layer is positioned adjacent to a dielectric layer comprising silicon and oxygen.
Example 85 comprises the apparatus of claim 84, wherein the dielectric layer further comprises carbon, fluorine, or hydrogen.
Example 86 comprises the apparatus of any one of claims 45-83, wherein at least a portion of the second layer is positioned adjacent to a dielectric layer comprising silicon and nitrogen.
Example 87 comprises the apparatus of any one of claims 1-86, wherein the p-type semiconductor region is at least part of a source region or a drain region of a field-effect transistor.
Example 88 comprises the apparatus of any one of claims 1-87, wherein the apparatus is a processor unit.
Example 89 comprises the apparatus of any one of claims 1-88, wherein the apparatus is an integrated circuit component.
Example 90 comprises the apparatus of any one of claims 1-87, wherein the apparatus further comprises: a printed circuit board; and an integrated circuit component attached to the printed circuit board, the integrated circuit component comprising the substrate, the first layer, the second layer, and the third layer.
Example 91 comprises the apparatus of claim 90, wherein the integrated circuit component is a first integrated circuit component, the apparatus further comprising one or more second integrated circuit components attached to the printed circuit board.
Example 92 comprises the apparatus of claim 91, wherein the apparatus further comprises a housing enclosing the printed circuit board and the first integrated circuit component.
Example 93 comprises a method, comprising: forming a hole in a dielectric layer located on a substrate to expose a p-type semiconductor region comprising a semiconductor and a first p-type dopant; forming a first layer comprising a second p-type dopant and an element, a first portion of the first layer positioned adjacent to the p-type semiconductor region, a second portion of the first layer positioned adjacent to one or more sidewalls of the hole, the first p-type dopant being the same or different than the second p-type dopant; forming a second layer comprising a first metal, the second layer positioned adjacent to the first layer; and forming a third layer comprising a second metal, the third layer located on the second layer and at least partially filling the hole.
Example 94 comprises the method of claim 93, wherein the p-type semiconductor region is part of the substrate and comprises a portion of a surface of the substrate.
Example 95 comprises the method of claim 94, wherein the p-type semiconductor region is positioned adjacent to the substrate.
Example 96 comprises the method of claim 94, wherein the p-type semiconductor region comprises at least a portion of a fin extending upwards from a surface of the substrate.
Example 97 comprises the method of claim 94, wherein the p-type semiconductor region encompasses an end of a fin extending upwards from a surface of the substrate.
Example 98 comprises the method of any one of claims 93-97, wherein the second p-type dopant is boron.
Example 99 comprises the method of claim 98, wherein the element is titanium.
Example 100 comprises the method of claim 98, wherein the element is tantalum.
Example 101 comprises the method of claim 98, wherein the element is cobalt, lanthanum, nickel, niobium, tungsten, or zirconium.
Example 102 comprises the method of any one of claims 93-97, wherein the second p-type dopant is indium.
Example 103 comprises the method of claim 102, wherein the element is antimony.
Example 104 comprises the method of claim 102, wherein the element is nitrogen, the first layer further comprising indium.
Example 105 comprises the method of claim 102, wherein the second p-type dopant is gallium.
Example 106 comprises the method of claim 105, wherein the element is nitrogen.
Example 107 comprises the method of claim 106, wherein the element is antimony.
Example 108 comprises the method of claim 106, wherein the element is indium, the first layer further comprising nitrogen.
Example 109 comprises the method of any one of claims 93-108, wherein the first metal is titanium, tantalum, hafnium, zirconium, or niobium.
Example 110 comprises the method any one of claims 93-109, wherein the second metal is tungsten, cobalt, titanium, gold, aluminum, molybdenum, chromium, or nickel.
Example 111 comprises the method of any one of claims 93-110, wherein a peak concentration of the second p-type dopant in the first layer exceeds 1.0×1022 cm−3.
Example 112 comprises the method of any one of claims 93-110, wherein a peak concentration of the second p-type dopant in the first portion of the first layer exceeds 1.0×1022 cm−3 and a peak concentration of the second p-type dopant in the second portion of the first layer exceeds 1.0×1022 cm−3.
Example 113 comprises the method of any one of claims 93-112, wherein an atomic ratio of the second p-type dopant in the first layer is in the range of 5-80%.
Example 114 comprises the method of any one of claims 93-112, wherein an atomic ratio of the second p-type dopant in the first layer is about 50%.
Example 115 comprises the method of any one of claims 93-114, wherein the semiconductor comprises silicon.
Example 116 comprises the method of any one of claims 93-114, wherein the semiconductor comprises silicon and germanium.
Example 117 comprises the method of any one of claims 93-116, wherein a thickness of the first portion of the first layer is in a range of 0.5-2.0 nm.
Example 118 comprises the method of any one of claims 93-117, further comprising forming a fourth layer positioned between the second layer and third layer, the fourth layer comprising: cobalt; ruthenium; tantalum; tantalum and nitrogen; indium and oxygen; tungsten and nitrogen; or titanium and nitrogen.
Example 119 comprises the method of any one of claims 93-118, wherein the substrate is a wafer.
