having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

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CPC
H01L29/785

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor devices including NMOS device and PMOS...
- Patent number 12,170,332
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 12,170,327
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Te Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive structures and methods of formation
- Patent number 12,170,331
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having uniformly formed structure
- Patent number 12,170,333
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND string utilizing floating body memory cell
- Patent number 12,171,093
- Issue date Dec 17, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,170,320
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Chia Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual contact process with stacked metal layers
- Patent number 12,170,319
- Issue date Dec 17, 2024
- Intel Corporation
- Kevin Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having conformal and non-conformal gate...
- Patent number 12,170,321
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium-dope...
- Patent number 12,166,124
- Issue date Dec 10, 2024
- Intel Corporation
- Ryan Hickey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,166,125
- Issue date Dec 10, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer film device and method
- Patent number 12,166,128
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Jen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method thereof
- Patent number 12,166,040
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact structure
- Patent number 12,166,088
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,166,095
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming interconnect structure having a barrier layer
- Patent number 12,165,975
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising a vertical stack of elongated semiconductor...
- Patent number 12,165,869
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having airgap and method for manufactur...
- Patent number 12,165,925
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with buried power rail, integrated circuit...
- Patent number 12,165,927
- Issue date Dec 10, 2024
- Mediatek Inc.
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device-including source and drain regions and superla...
- Patent number 12,166,081
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Ilgyou Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structure with uneven gate profile
- Patent number 12,166,096
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Sheng Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stacks
- Patent number 12,166,105
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,166,038
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shun-Jang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,166,041
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming same
- Patent number 12,166,127
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with power control circuit having various...
- Patent number 12,166,029
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jui Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421213
- Publication date Dec 19, 2024
- UNITED MICROELECTRONICS CORP.
- Fu-Jung Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421232
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Suk YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT REVEAL UNIFORMITY
- Publication number 20240421153
- Publication date Dec 19, 2024
- Intel Corporation
- Joseph D’SILVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOISE TRANSISTOR
- Publication number 20240421228
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413151
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Jungho DO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A SEAL RING
- Publication number 20240413245
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- In Namgung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS
- Publication number 20240413016
- Publication date Dec 12, 2024
- Intel Corporation
- Sridhar GOVINDARAJU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240413157
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER
- Publication number 20240413199
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC FEATURES FOR PARASITIC CAPACITANCE REDUCTION
- Publication number 20240413244
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240413200
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME
- Publication number 20240413246
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Jaemun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method of Forming Thereof
- Publication number 20240413087
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240405126
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Huan HSIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED STRESSORS IN EPITAXY SOURCE/DRAIN REGIONS
- Publication number 20240404885
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240404876
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kan-Ju Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...
- Publication number 20240405101
- Publication date Dec 5, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240405087
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Chin KING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN JOG STRUCTURE AND METHODS OF MAKING SAME
- Publication number 20240405097
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED FIN HEIGHT FOR FINFET TRANSISTOR AND METHOD OF FABRICATIN...
- Publication number 20240405099
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE CAPABLE OF RELEASING PROCESS CHARGE, AND METHO...
- Publication number 20240405127
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Huan HSIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY SYSTEM
- Publication number 20240407168
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Quan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...
- Publication number 20240395664
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY
- Publication number 20240395816
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395864
- Publication date Nov 28, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing FUNG
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...
- Publication number 20240395866
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzu-Hsiang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT
- Publication number 20240395938
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395905
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS

having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fin field effect transistor devices including NMOS device and PMOS...

Semiconductor structure and manufacturing method of the same

Conductive structures and methods of formation

Integrated circuit devices having uniformly formed structure

NAND string utilizing floating body memory cell

Semiconductor device and method of manufacture

Dual contact process with stacked metal layers

Fin field effect transistor having conformal and non-conformal gate...

Isolation structures and methods of forming the same in field-effec...

Field-effect transistor (FET) with self-aligned ferroelectric capac...

Gate-all-around integrated circuit structures having germanium-dope...

Semiconductor structure and method for forming the same

Multi-layer film device and method

Semiconductor device and method

Integrated circuit and manufacturing method thereof

Source/drain contact structure

Semiconductor device and method

Method of forming interconnect structure having a barrier layer

Transistors comprising a vertical stack of elongated semiconductor...

Fin field effect transistor having airgap and method for manufactur...

Semiconductor structure with buried power rail, integrated circuit...

Semiconductor device-including source and drain regions and superla...

Method of manufacturing semiconductor device and associated memory...

Semiconductor device structure with uneven gate profile

Semiconductor device structure with metal gate stacks

Nanosheet channel-to-source and drain isolation

Semiconductor device and a method for fabricating the same

Semiconductor device and method

Semiconductor device and method of forming same

Integrated circuit device with power control circuit having various...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT REVEAL UNIFORMITY

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

NOISE TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES HAVING A SEAL RING

TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS

NANOSHEET TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD

METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER

DIELECTRIC FEATURES FOR PARASITIC CAPACITANCE REDUCTION

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME

Interconnect Structure and Method of Forming Thereof

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

EMBEDDED STRESSORS IN EPITAXY SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIN JOG STRUCTURE AND METHODS OF MAKING SAME

OPTIMIZED FIN HEIGHT FOR FINFET TRANSISTOR AND METHOD OF FABRICATIN...

SEMICONDUCTOR DEVICE CAPABLE OF RELEASING PROCESS CHARGE, AND METHO...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY SYSTEM

SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...

HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...

BACKSIDE CONTACT

SEMICONDUCTOR DEVICE AND METHOD