having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

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CPC
H01L29/785

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,315,864
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chi Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor dev...
- Patent number 12,308,366
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,308,369
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for preventing unintentional merging of epitaxi...
- Patent number 12,300,698
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack treatment
- Patent number 12,300,549
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary MOS FETS vertically arranged and including multiple d...
- Patent number 12,300,550
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device with air gap spacer and fabrication methods thereof
- Patent number 12,300,720
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having air gap and method of fabricating thereof
- Patent number 12,300,734
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with channel and method for forming...
- Patent number 12,300,721
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huang-Siang Lan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method for the semiconductor...
- Patent number 12,300,738
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,300,751
- Issue date May 13, 2025
- Samsung Electronics Co., Ltd.
- Junggil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistant contact method and structure
- Patent number 12,300,729
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,300,741
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Teng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 12,300,742
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective liner on backside via and method thereof
- Patent number 12,300,722
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a work function layer having an oxygen-bl...
- Patent number 12,300,733
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor gate-all-around structure having carbon-doped anti-pu...
- Patent number 12,294,017
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of channel layers and metho...
- Patent number 12,294,005
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Woo Cheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 12,294,027
- Issue date May 6, 2025
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adhesion layer for multi-layer photoresist
- Patent number 12,292,684
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chen-Yu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator subs...
- Patent number 12,294,006
- Issue date May 6, 2025
- Intel Corporation
- Chung-Hsun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,294,022
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jui-Fen Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,294,004
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having corner spacer...
- Patent number 12,294,023
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chen-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,294,028
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jiun-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including unilaterally extending gates and met...
- Patent number 12,289,877
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method
- Patent number 12,288,791
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Rung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio source or drain structures with abrupt dopant pro...
- Patent number 12,288,808
- Issue date Apr 29, 2025
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure with enhanced dopant diffusion for semicondu...
- Patent number 12,288,815
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact
- Patent number 12,288,822
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Che Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072015
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE STRUCTURE WITH EXTRA FIN
- Publication number 20250072038
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20250072040
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20250072008
- Publication date Feb 27, 2025
- WINBOND ELECTRONICS CORP.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250072028
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20250072037
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES
- Publication number 20250072041
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIELECTRIC STRUCTURE
- Publication number 20250072054
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...
- Publication number 20250072039
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Nano-Pillar Transistor Structures for 3-D ICS
- Publication number 20250063780
- Publication date Feb 20, 2025
- MURATA MANUFACTURING CO., LTD.
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE
- Publication number 20250063805
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE STRUCTURE
- Publication number 20250063759
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20250063718
- Publication date Feb 20, 2025
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE STRUCTURES AND METHODS OF FORMATION
- Publication number 20250063758
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063776
- Publication date Feb 20, 2025
- UNITED MICROELECTRONICS CORP.
- Hsin-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250063783
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20250063757
- Publication date Feb 20, 2025
- Sony Semiconductor Solutions Corporation
- RYOHEI TAKAYANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE
- Publication number 20250056897
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Duckseoung KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250056859
- Publication date Feb 13, 2025
- United Microelectronics Corp.
- Jia-He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20250056860
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE, INTEGRATED CIRCUIT LAYOUT AND SYSTEM FOR...
- Publication number 20250056895
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Jui CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...
- Publication number 20250056783
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES, AND RELATED MEMORY DEVICES
- Publication number 20250056822
- Publication date Feb 13, 2025
- Lodestar Licensing Group LLC
- Toru Tanzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS
- Publication number 20250056831
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS

having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

Method of manufacturing semiconductor devices and semiconductor dev...

Method of manufacturing a semiconductor device and a semiconductor...

Isolation structure for preventing unintentional merging of epitaxi...

Gate stack treatment

Complementary MOS FETS vertically arranged and including multiple d...

Multi-gate device with air gap spacer and fabrication methods thereof

Semiconductor device having air gap and method of fabricating thereof

Semiconductor device structure with channel and method for forming...

Semiconductor device and manufacturing method for the semiconductor...

Semiconductor device

Low resistant contact method and structure

Semiconductor device and method

Fin field-effect transistor device and method of forming the same

Selective liner on backside via and method thereof

Semiconductor device with a work function layer having an oxygen-bl...

Semiconductor gate-all-around structure having carbon-doped anti-pu...

Semiconductor device having a plurality of channel layers and metho...

Semiconductor device having doped epitaxial region and its methods...

Adhesion layer for multi-layer photoresist

Gate-all-around integrated circuit structures having insulator subs...

Semiconductor device and method of manufacturing the same

Fin field-effect transistor and method of forming the same

Method of manufacturing a semiconductor device having corner spacer...

Manufacturing method of semiconductor device

Semiconductor device including unilaterally extending gates and met...

Semiconductor device and method

High aspect ratio source or drain structures with abrupt dopant pro...

Source/drain structure with enhanced dopant diffusion for semicondu...

Semiconductor device with source/drain contact

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FINFET DEVICE STRUCTURE WITH EXTRA FIN

SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

METHOD OF FORMING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...

INTEGRATED CIRCUIT DEVICES

SEMICONDUCTOR DEVICE WITH DIELECTRIC STRUCTURE

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...

Vertical Nano-Pillar Transistor Structures for 3-D ICS

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD OF FORMING GATE STRUCTURE

NAND String Utilizing Floating Body Memory Cell

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

INTEGRATED CIRCUIT DEVICE, INTEGRATED CIRCUIT LAYOUT AND SYSTEM FOR...

SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...

INTEGRATED CIRCUIT DEVICES, AND RELATED MEMORY DEVICES

ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS