having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

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H01L29/785

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

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Patents Grantslast 30 patents

Information Patent Grant
High-voltage semiconductor device structures
- Patent number 12,205,949
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fins for metal oxide semiconductor device structures
- Patent number 12,205,955
- Issue date Jan 21, 2025
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar buried channel structure integrated with non-planar structures
- Patent number 12,205,947
- Issue date Jan 21, 2025
- Intel Corporation
- Guannan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having source/drain regions including a plurality of...
- Patent number 12,205,988
- Issue date Jan 21, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuyuki Tomida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around device and method of forming the same
- Patent number 12,206,004
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for forming metal gate electrodes for transistors
- Patent number 12,205,819
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having a subtrate with...
- Patent number 12,207,460
- Issue date Jan 21, 2025
- Renesas Electronics Corporation
- Tomohiro Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for tuning threshold voltage
- Patent number 12,205,850
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-formation mends of dielectric features
- Patent number 12,206,013
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electronic apparatus including the semicon...
- Patent number 12,199,165
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Changhyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device integration with separated fin-like field effect...
- Patent number 12,199,100
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation with reduced dopant loss and increased dimensions
- Patent number 12,199,156
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate isolation layer
- Patent number 12,199,096
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Seung Seok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architecture having gate contacts
- Patent number 12,199,101
- Issue date Jan 14, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,040
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Hyeongyu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-conformal oxide liner and manufacturing methods thereof
- Patent number 12,199,158
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Ho Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET MOS capacitor
- Patent number 12,199,193
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having removed substrate
- Patent number 12,199,143
- Issue date Jan 14, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a multi-oxide semiconductor channel la...
- Patent number 12,199,184
- Issue date Jan 14, 2025
- SK Hynix Inc.
- Young Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 12,199,189
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hou-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric gap-filling process for semiconductor device
- Patent number 12,198,974
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors having vertically stacked nano-sheet
- Patent number 12,199,095
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neighboring gate-all-around integrated circuit structures having co...
- Patent number 12,199,142
- Issue date Jan 14, 2025
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,199,157
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,199,164
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION BETWEEN DEVICE AREAS
- Publication number 20250022746
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS
- Publication number 20250022881
- Publication date Jan 16, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250022958
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-You TAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL
- Publication number 20250022940
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MOL RELIABILITY EVALUATION
- Publication number 20250022759
- Publication date Jan 16, 2025
- International Business Machines Corporation
- HUIMEI ZHOU
- G01 - MEASURING TESTING
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS LINERS IN SEMICONDUCTOR DEVICES
- Publication number 20250022956
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Cheng LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250022941
- Publication date Jan 16, 2025
- Samsung Electronics Co., LTD
- Beomjin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20250022959
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sung Uk JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSE-TYPE MEMORY WITH FIN FIELD-EFFECT TRANSISTOR
- Publication number 20250024668
- Publication date Jan 16, 2025
- EMEMORY TECHNOLOGY INC.
- Yi-Hung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING
- Publication number 20250015166
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES
- Publication number 20250015187
- Publication date Jan 9, 2025
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL STORAGE GATE FINFET FOR NON-VOLATILE MEMORY
- Publication number 20250017001
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND CHARGE CONTROL SYSTEM
- Publication number 20250015611
- Publication date Jan 9, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Tatsuya ONUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015162
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...
- Publication number 20250015184
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Hagyoul BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20250015080
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR
- Publication number 20250015127
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien Yu Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION
- Publication number 20250014947
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kenichi Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20250015167
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Yi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015134
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Changju Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Device Having Reduced Contact Resistivity
- Publication number 20250015154
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Georgios VELLIANITIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure
- Publication number 20250015186
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Hung-Chun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP
- Publication number 20250006787
- Publication date Jan 2, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE TRANSISTOR FABRICATION IN COMPLEMENTARY FET (CFET) DEVICES
- Publication number 20250006812
- Publication date Jan 2, 2025
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...
- Publication number 20250006806
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250006559
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Siao-Jing Li
- H01 - BASIC ELECTRIC ELEMENTS

having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High-voltage semiconductor device structures

Fins for metal oxide semiconductor device structures

Planar buried channel structure integrated with non-planar structures

FinFET device having source/drain regions including a plurality of...

Gate all around device and method of forming the same

Method and device for forming metal gate electrodes for transistors

Method of manufacturing semiconductor device having a subtrate with...

Gate structures for tuning threshold voltage

Semiconductor device structure with source/drain structure and meth...

Post-formation mends of dielectric features

Semiconductor device and electronic apparatus including the semicon...

Method of manufacturing a multi-gate device having a semiconductor...

Semiconductor devices and method of manufacturing the same

Multi-gate device integration with separated fin-like field effect...

Contact formation with reduced dopant loss and increased dimensions

Gate line plug structures for advanced integrated circuit structure...

Semiconductor device having gate isolation layer

Self-aligned gate endcap (SAGE) architecture having gate contacts

Semiconductor device

Non-conformal oxide liner and manufacturing methods thereof

FinFET MOS capacitor

Gate-all-around integrated circuit structures having removed substrate

Semiconductor devices having a multi-oxide semiconductor channel la...

Semiconductor device structure

Dielectric gap-filling process for semiconductor device

Fin field effect transistors having vertically stacked nano-sheet

Neighboring gate-all-around integrated circuit structures having co...

Semiconductor device structure and methods of forming the same

Semiconductor device and manufacturing method thereof

Plugs for interconnect lines for advanced integrated circuit struct...

Patents Applicationslast 30 patents

ISOLATION BETWEEN DEVICE AREAS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL

TEST STRUCTURE FOR MOL RELIABILITY EVALUATION

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

STRESS LINERS IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

ANTIFUSE-TYPE MEMORY WITH FIN FIELD-EFFECT TRANSISTOR

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES

NOVEL STORAGE GATE FINFET FOR NON-VOLATILE MEMORY

SEMICONDUCTOR DEVICE AND CHARGE CONTROL SYSTEM

SEMICONDUCTOR DEVICE

FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...

FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION

MULTI-GATE DEVICE AND RELATED METHODS

SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME

Multigate Device Having Reduced Contact Resistivity

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

Semiconductor structure

INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP

N-TYPE TRANSISTOR FABRICATION IN COMPLEMENTARY FET (CFET) DEVICES

HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...

GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME