having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

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H01L29/785

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,230,714
- Issue date Feb 18, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bridge channel field effect transistor with multiple inner sp...
- Patent number 12,230,685
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Sungsoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,230,713
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned inner spacer on gate-all-around structure and methods...
- Patent number 12,230,692
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsungyu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric fin structure
- Patent number 12,230,712
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including multi-width semiconductor fins
- Patent number 12,230,633
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet device with tri-layer bottom dielectric isolation
- Patent number 12,230,676
- Issue date Feb 18, 2025
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Size-controllable multi-stack semiconductor device and method of ma...
- Patent number 12,224,314
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device including multiple channel layers w...
- Patent number 12,224,357
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Jinyeong Joe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 12,224,203
- Issue date Feb 11, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,224,204
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Nan Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,224,348
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor MRAM device and method
- Patent number 12,225,734
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide structures in transistors and methods of forming
- Patent number 12,224,330
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing 3D semiconductor devices and structures with t...
- Patent number 12,225,737
- Issue date Feb 11, 2025
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout pattern of static random access memory and the forming metho...
- Patent number 12,224,001
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Chun-Hsien Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method
- Patent number 12,224,327
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
- Patent number 12,224,349
- Issue date Feb 11, 2025
- Intel Corporation
- Ritesh K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming an oxide volume within a fin
- Patent number 12,224,202
- Issue date Feb 11, 2025
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with bottom dielectric isolation
- Patent number 12,224,312
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate dielectric formed using selective de...
- Patent number 12,224,334
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,224,350
- Issue date Feb 11, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having gate-all-around...
- Patent number 12,218,226
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for providing line end extensions for fin-type...
- Patent number 12,218,239
- Issue date Feb 4, 2025
- Mosaid Technologies Incorporated
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of FinFET devices and methods of forming same
- Patent number 12,218,240
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring in diffusion breaks in an integrated circuit
- Patent number 12,218,135
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D-channel transistor structure with source-drain engineering
- Patent number 12,218,205
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for depositing a molybdenum nitride film on a surface of a...
- Patent number 12,215,416
- Issue date Feb 4, 2025
- ASM IP Holding B.V.
- Eric Christopher Stevens
- G11 - INFORMATION STORAGE
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 12,218,138
- Issue date Feb 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Vertical Nano-Pillar Transistor Structures for 3-D ICS
- Publication number 20250063780
- Publication date Feb 20, 2025
- MURATA MANUFACTURING CO., LTD.
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE STRUCTURE
- Publication number 20250063759
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE
- Publication number 20250063805
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20250063718
- Publication date Feb 20, 2025
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE STRUCTURES AND METHODS OF FORMATION
- Publication number 20250063758
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063776
- Publication date Feb 20, 2025
- UNITED MICROELECTRONICS CORP.
- Hsin-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250063783
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20250063757
- Publication date Feb 20, 2025
- Sony Semiconductor Solutions Corporation
- RYOHEI TAKAYANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE
- Publication number 20250056897
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Duckseoung KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250056859
- Publication date Feb 13, 2025
- United Microelectronics Corp.
- Jia-He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20250056860
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE, INTEGRATED CIRCUIT LAYOUT AND SYSTEM FOR...
- Publication number 20250056895
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Jui CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...
- Publication number 20250056783
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES, AND RELATED MEMORY DEVICES
- Publication number 20250056822
- Publication date Feb 13, 2025
- Lodestar Licensing Group LLC
- Toru Tanzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS
- Publication number 20250056831
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250056832
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056818
- Publication date Feb 13, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...
- Publication number 20250056830
- Publication date Feb 13, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250056862
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250048678
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL
- Publication number 20250048681
- Publication date Feb 6, 2025
- Kennametal Inc.
- Tim Guter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHOD...
- Publication number 20250048611
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END LINE OF MEMORY DEVICE
- Publication number 20250048644
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yu LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Devices and Semiconductor Dev...
- Publication number 20250048720
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chandrashekhar Prakash SAVANT
- H01 - BASIC ELECTRIC ELEMENTS

having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Multi-bridge channel field effect transistor with multiple inner sp...

Semiconductor device structure and methods of forming the same

Self-aligned inner spacer on gate-all-around structure and methods...

Dielectric fin structure

Stacked transistors with different channel widths

Integrated circuit structure including multi-width semiconductor fins

Nanosheet device with tri-layer bottom dielectric isolation

Size-controllable multi-stack semiconductor device and method of ma...

Semiconductor transistor device including multiple channel layers w...

Air gap spacer formation for nano-scale semiconductor devices

Semiconductor device and method

Semiconductor device structure and method for forming the same

Semiconductor MRAM device and method

Silicide structures in transistors and methods of forming

Method for producing 3D semiconductor devices and structures with t...

Layout pattern of static random access memory and the forming metho...

Semiconductor device and method

Self-aligned gate endcap (SAGE) architectures with vertical sidewalls

Forming an oxide volume within a fin

Field effect transistors with bottom dielectric isolation

Semiconductor device with gate dielectric formed using selective de...

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Methods of fabricating semiconductor devices having gate-all-around...

Structure and method for providing line end extensions for fin-type...

Source/drain regions of FinFET devices and methods of forming same

Wiring in diffusion breaks in an integrated circuit

2D-channel transistor structure with source-drain engineering

Methods for depositing a molybdenum nitride film on a surface of a...

Air gap formation between gate spacer and epitaxy structure

Patents Applicationslast 30 patents

Vertical Nano-Pillar Transistor Structures for 3-D ICS

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD OF FORMING GATE STRUCTURE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE

NAND String Utilizing Floating Body Memory Cell

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

INTEGRATED CIRCUIT DEVICE, INTEGRATED CIRCUIT LAYOUT AND SYSTEM FOR...

SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...

INTEGRATED CIRCUIT DEVICES, AND RELATED MEMORY DEVICES

ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHOD...

BACK END LINE OF MEMORY DEVICE

Method of Manufacturing Semiconductor Devices and Semiconductor Dev...