Claims
- 1. An article comprising silicon carbide having greater than 3×1019 atoms of nitrogen/cm3.
- 2. The article of claim 1, wherein the silicon carbide has from 5×1019 to 1×1020 nitrogen atoms/cm3.
- 3. The article of claim 1, wherein the silicon carbide has from 7×1019 to 1×1020 nitrogen atoms/cm3.
- 4. The article of claim 1, wherein the silicon carbide has an electrical resistivity of less than 0.10 ohm-cm.
- 5. The article of claim 4, wherein the silicon carbide has an electrical resistivity of from 0.10 ohm-cm to 0.08 ohm-cm.
- 6. The article of claim 4, wherein average electrical resistivity is from 0.02 ohm-cm to 0.06 ohm-cm.
- 7. The article of claim 4, wherein a variation around a mean of the electrical resistivity is less than 35%.
- 8. The article of claim 1, wherein the silicon carbide is opaque at a wavelength of from 0.1 μm to 1.0 μm.
- 9. The article of claim 1, wherein the article is an edge ring, plasma screen or liner.
- 10. An article comprising silicon carbide with an absorption coefficient from 259 cm−1 to 1000 cm−1 at a wavelength of 0.1 μm to 1.0 μm.
- 11. A method of making a silicon carbide article comprising reacting silicon carbide precursors in a nitrogen atmosphere of at least 56% by volume of reactants and depositing the silicon carbide on a substrate.
- 12. The method of claim 11, wherein the nitrogen ranges from 56% to 90% by volume of reactants.
- 13. The method of claim 12, wherein the nitrogen ranges from 60% to 90% by volume of reactants.
- 14. The method of claim 11, wherein a total pressure is at least 300 torr.
- 15. The method of claim 14, wherein the total pressure is from 300 torr to 835 torr.
- 16. The method of claim 15, wherein the total pressure is from 320 torr to 700 torr.
- 17. The method of claim 11, wherein temperatures range from 1250° C. to 1400° C.
- 18. The method of claim 11, wherein a source of nitrogen comprises N2(g), volatile amine compounds, or mixtures thereof.
- 19. The method of claim 18, wherein a source of nitrogen comprises NF3, NH3 or mixtures thereof.
- 20. The method of claim 11, further comprising the steps of removing the silicon carbide from the substrate, and machining and polishing the silicon carbide into an edge ring.
Parent Case Info
[0001] The present application is a continuation-in-part application of U.S. patent application Ser. No. 09/790,442 filed Feb. 21, 2001 which is a non-provisional application of Provisional Application Serial No. 60/184,766 filed Feb. 24, 2000.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60184766 |
Feb 2000 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09790442 |
Feb 2001 |
US |
Child |
10164238 |
Jun 2002 |
US |