FIELD
This disclosure relates to the field of integrated magnetic devices. More particularly, this disclosure relates to magnetic cores in integrated magnetic devices.
BACKGROUND
A magnetic core of an integrated magnetic device frequently includes magnetic material layers such as permalloy layers alternated with barrier layers of a non-magnetic barrier material. In some cases, this layer stack may be formed on a planar surface and patterned using an etch mask and a wet etch, which undesirably undercuts the etch mask and produces poor dimensional and profile control. Stress in the magnetic material is difficult to control in such a configuration, and can lead to degraded performance of the integrated magnetic device, for example Barkhausen noise. In other cases, this layer stack may be formed in a trench in a dielectric layer. The magnetic material layers conform to contours of the trench, resulting in a non-planar configuration which also leads to degraded performance of the integrated magnetic device.
SUMMARY
The present disclosure introduces a system and a method for forming a magnetic core in a trench of a dielectric layer. In one implementation, the disclosed system/method involves removing layers of magnetic material from sidewalls of the trench. Advantageously, the removal step reduces defects in the magnetic core.
An integrated magnetic device has a magnetic core which includes magnetic material layers located in a trench in a dielectric layer. The magnetic material layers are flat and parallel to a bottom of the trench, and do not extend upward along sides of the trench. The integrated magnetic device is formed by forming the magnetic material layers over the dielectric layer and extending into the trench, so that each layer extends along a bottom of the trench and upward along sides of the trench. A protective layer is formed over the magnetic material layers. The magnetic material layers are removed from over the dielectric layer, leaving the magnetic material layers and a portion of the protective layer in the trench. The magnetic material layers along sides of the trench are subsequently removed, while the magnetic material layers along the bottom of the trench are protected by the protective layer. The magnetic material layers along the bottom of the trench provide the magnetic core.
BRIEF DESCRIPTION OF THE VIEWS OF THE DRAWINGS
FIGS. 1A and 1B are cross sections of an example integrated magnetic device.
FIGS. 2A through 2G are cross sections of an integrated magnetic device having a magnetic core located in a trench, depicted in successive stages of an example method of formation.
FIGS. 3A through 3E are cross sections of another example integrated magnetic device having a magnetic core located in a trench, depicted in successive stages of another example method of formation.
FIGS. 4A through 4D are cross sections of a further example integrated magnetic device having a magnetic core located in a trench, depicted in successive stages of a further example method of formation.
DETAILED DESCRIPTION
The present disclosure is described with reference to the attached figures. The figures are not drawn to scale and they are provided merely to illustrate the disclosure. Several aspects of the disclosure are described below with reference to example applications for illustration. It should be understood that numerous specific details, relationships, and methods are set forth to provide an understanding of the disclosure. The present disclosure is not limited by the illustrated ordering of acts or events, as some acts may occur in different orders and/or concurrently with other acts or events. Furthermore, not all illustrated acts or events are required to implement a methodology in accordance with the present disclosure.
For the purposes of this disclosure, the term “instant top surface” of an integrated magnetic device is understood to refer to a top surface of the integrated magnetic device which exists at the particular step being disclosed. The instant top surface may change location from step to step in the formation of the integrated magnetic device. For the purposes of this disclosure, the term “vertical” is understood to refer to a direction perpendicular to the plane of the instant top surface of the integrated magnetic device.
It is noted that terms such as upper, lower, over, above, under, and below may be used in this disclosure. These terms should not be construed as limiting the position or orientation of a structure or element, but should be used to provide spatial relationship between structures or elements. For the purposes of this disclosure, it will be understood that, if an element is referred to as being “along” to another element, it may be contacting the other element, or intervening elements may be present.
FIG. 1A and FIG. 1B are cross sections of an example integrated magnetic device. Referring to FIG. 1A, the integrated magnetic device 100 includes a substrate 102. The substrate 102 may include, for example, active components such as transistors, passive components such as resistors and capacitors, and interconnection members such as vias and interconnects. An optional trench stop layer 104 may be located over the substrate 102. The trench stop layer 104 may include, for example, one or more layers of silicon nitride, silicon oxynitride, silicon carbide, or other material having a low etch rate in processes used to remove silicon dioxide-based dielectric material, located over the substrate 102. A core dielectric layer 106 is located over the substrate 102, on the optional trench stop layer 104, if present. The core dielectric layer 106 may include, for example, silicon dioxide or silicon dioxide-based dielectric material such as a low-k dielectric material. A trench structure 108 extends through the core dielectric layer 106, to the optional trench stop layer 104, if present. The trench structure 108 has a bottom 112 along the substrate 102 and has sides 114 extending from the bottom 112 to a top surface 116 of the core dielectric layer 106. The sides 114 are depicted in FIG. 1A as straight and vertical, that is perpendicular to the bottom 112. Other shapes for the trench structure 108 are within the scope of the instant example. The sides 114 may be sloped, or curved, depending on how the trench structure 108 is formed. An optional trench barrier liner 110 may be located along the bottom 112 and the sides 114 of the trench structure 108. The trench barrier liner 110 may include silicon nitride, silicon oxynitride, or other material suitable for reducing diffusion of metals into the core dielectric layer 106.
A lower encapsulation layer 118 may be located along the bottom 112 of the trench structure 108. The lower encapsulation layer 118 may include one or more layers of titanium, titanium nitride, tantalum, tantalum nitride, or other material suitable for controlling stress in a magnetic core 120, in any combination thereof. The lower encapsulation layer 118 extends along the bottom 112 of the trench structure 108. The lower encapsulation layer 118 may be confined to the bottom 112 of the trench structure 108, as depicted in FIG. 1A, or may extend upward along the sides 114 of the trench structure 108. The magnetic core 120 is located on the lower encapsulation layer 118. The magnetic core 120, which is shown in detail in FIG. 1B, includes magnetic material layers 122. The magnetic material layers 122 in the magnetic core 120 are flat and parallel to the bottom 112 of the trench structure 108. The magnetic material layers 122 may include, for example, an alloy of iron, nickel, cobalt, or any combination thereof. The magnetic material layers 122 may also include aluminum, silicon, molybdenum, chromium, niobium, or vanadium. Other materials for the magnetic material layers 122 are within the scope of the instant example. In the instant example, the magnetic material layers 122 may be separated by barrier layers 124 of a barrier material, for example a III-N material such as aluminum nitride or other electrically isolating material with etch characteristics similar to the magnetic material layers 122. III-N materials have one or more group III elements, that is, boron, aluminum, or gallium, combined with nitrogen. The magnetic material layers 122 do not extend upward along the sides 114 of the trench structure 108. An upper encapsulation layer 126 is located over the magnetic core 120, and may extend upward along the sides 114, as depicted in FIG. 1A. The upper encapsulation layer 126 may include one or more layers of material suitable for controlling stress in the magnetic material layers 122. The upper encapsulation layer 126 may have a composition and structure similar to the lower encapsulation layer 118. The magnetic material layers 122 do not extend past the top surface 116 of the core dielectric layer 106. An optional trench fill material 128 may be located over the upper encapsulation layer 126, filling the trench structure 108. The trench fill material 128 may include, for example, one or more layers of silicon dioxide, silicon nitride, or any combination thereof. The magnetic core 120 being located in the trench structure 108 and being confined by a combination of the lower encapsulation layer 118 and the upper encapsulation layer 126, may control stress in the magnetic material layers 122 and thus advantageously improve performance of the integrated magnetic device 100.
An optional interconnect etch stop layer 130 may be located over the top surface 116 of the core dielectric layer 106 and over the trench fill material 128. The interconnect etch stop layer 130 may include silicon nitride, silicon oxynitride, silicon carbide, or other material suitable for an etch stop in forming interconnects or vias. An upper dielectric layer 132, including silicon dioxide or silicon dioxide-based dielectric material, may be located over the interconnect etch stop layer 130. Windings, not shown in FIG. 1A, may be located around the magnetic core 120. The windings may include, for example, lower winding segments in the substrate under the magnetic core 120, side winding segments in the core dielectric layer 106 connecting to the lower winding segments, and upper winding segments in the upper dielectric layer 132 connecting to the side winding segments.
FIG. 2A through FIG. 2G are cross sections of an integrated magnetic device having a magnetic core located in a trench, depicted in successive stages of an example method of formation. Referring to FIG. 2A, the integrated magnetic device 200 has a substrate 202 which may be, for example, part of a semiconductor wafer containing active components and circuits for operation of the integrated magnetic device 200. The substrate 202 may have dielectric material extending to a top surface 234. Vias or interconnects, not shown in FIG. 2A, may also extend to the top surface 234. An optional trench etch stop layer 204 may be formed over the top surface 234 of the substrate 202. The trench etch stop layer 204 may include, in one example, silicon nitride formed by a plasma enhanced chemical vapor deposition (PECVD) process using silane (SiH4) and ammonia (NH3), or by a PECVD process using bis(tertiary-butyl-amino) silane (BTBAS). In another example, the trench etch stop layer 204 may include silicon oxynitride formed by a PECVD process using silane, ammonia and nitrous oxide (N2O). In a further example, the trench etch stop layer 204 may include silicon carbide formed by a PECVD process using silane and methane (CH4).
A core dielectric layer 206 is formed over the trench etch stop layer 204. The core dielectric layer 206 may include silicon dioxide, formed by a PECVD process using tetraethyl orthosilicate (TEOS), or may include silicon dioxide-based dielectric material such as organosilicate glass (OSG) formed by a PECVD process. Other dielectric materials for the core dielectric layer 206 are within the scope of the instant example. The core dielectric layer 206 is thicker than the subsequently-formed magnetic core 220 shown in FIG. 2E below.
A trench 208 is formed through the core dielectric layer 206, extending to the trench etch stop layer 204 as depicted in FIG. 2A. The trench 208 may be formed, for example, by forming a trench etch mask, not shown, over a top surface 216 of the core dielectric layer 206, and removing dielectric material from the core dielectric layer 206 where exposed by the trench etch mask by a reactive ion etch (RIE) process using fluorine radicals, so that a bottom 212 of the trench 208 is located on the trench etch stop layer 204. An etch rate of the trench etch stop layer 204 by the RIE process is significantly lower than an etch rate of the core dielectric layer 206, allowing the RIE process to be terminated after forming the trench 208 before damaging the substrate 202. Forming the trench 208 using the RIE process may produce sides 214 of the trench 208 that are substantially straight and vertical, as depicted in FIG. 2A. In another example, the trench 208 may be formed by a partly isotropic plasma etch process, producing sides 214 which are sloped. In a further example, the trench 208 may be formed by a wet etch process, producing sides 214 which are sloped and have a concave curvature. In a version of the instant example in which the trench etch stop layer 204 is omitted, the trench 208 may be formed by a timed etch process.
An optional trench barrier liner 210 may be formed over the top surface 216 of the core dielectric layer 206, extending into the trench 208 and forming a continuous layer on the sides 214 and bottom 212 of the trench 208. The trench barrier liner 210 may include, for example, silicon nitride, silicon oxynitride, or silicon carbide, or any combination thereof. The trench barrier liner 210 may be formed by one or more PECVD processes, for example as described in reference to the trench etch stop layer 204.
Referring to FIG. 2B, a lower encapsulation layer 218 is formed on the trench barrier liner 210. The lower encapsulation layer 218 may include materials for controlling stress in the subsequently-formed magnetic core 220 shown in FIG. 2E below, such as one or more layers of titanium, titanium nitride, tantalum, tantalum nitride, or any combination thereof. A layer of titanium or a layer of tantalum in the lower encapsulation layer 218 may be formed by a physical vapor deposition (PVD) process, also referred to as a sputter process. A layer of titanium nitride or a layer of tantalum nitride in the lower encapsulation layer 218 may be formed by a PVD process using a nitrogen-containing ambient or by an atomic layer deposition (ALD) process. The lower encapsulation layer 218 is continuous along the sides 214 and bottom 212 of the trench 208.
Magnetic material layers 222 are formed over the lower encapsulation layer 218, extending into the trench 208. The magnetic material layers 222 extend along the sides 214 and the bottom 212 of the trench 208. In the instant example, the magnetic material layers 222 may be alternated with barrier layers 224. The magnetic material layers 222 may include any of the materials described in reference to the magnetic material layers 122 of FIG. 1A and FIG. 1B. Each of the magnetic material layers 222 may be, for example, 10 nanometers to 500 nanometers thick, depending of the specific mode of operation of the integrated magnetic device 200. The barrier layers 224 may include any of the materials described in reference to the barrier layers 124 of FIG. 1A and FIG. 1B. Each of the magnetic material layers 222 may be, for example, 1 nanometers to 20 nanometers thick. The magnetic material layers 222 and the barrier layers 224 may be formed by sequential PVD processes, for example in separate chambers of a cluster tool.
Referring to FIG. 2C, a protective coating 236 is formed over the magnetic material layers 222. A composition of the protective coating 236 may be selected to satisfy two criteria: protection of the magnetic material layers 222 in the trench 208 during a subsequent planarization process, and protection of the magnetic material layers 222 in the trench 208 during a subsequent etch process. The protective coating 236 may have a higher removal rate during the subsequent planarization process than the magnetic material layers 222. The protective coating 236 may include, in one example, organic polymer, such as novolac resin, which may be applied to the integrated magnetic device 100 by a spin-coat process. Other compositions of the protective coating 236, such as spin-on glass (SOG) formulations, silicone polymers, or tape-applied films, are within the scope of the instant example.
Referring to FIG. 2D, the protective coating 236, the magnetic material layers 222, the barrier layers 224, the lower encapsulation layer 218, and the trench barrier liner 210 are removed from over the top surface 216 of the core dielectric layer 206 by a planarization process 238, which may include a chemical mechanical polish (CMP) process using a CMP pad 240. The CMP process may use an alkaline slurry with a pH value of, for example, 8 to 11. The planarization process 238 may include other planarization steps, such as an etchback step to remove a portion of the protective coating 236 before the CMP process. The planarization process 238 may also remove a portion of the core dielectric layer 206, thus lowering the top surface 216. The CMP process may be an endpointed process or a time process. The magnetic material layers 222 and the barrier layers 224, and the lower encapsulation layer 218, remain in the trench 208, horizontally along the bottom 212 and vertically along the sides 214, after the planarization process 238 is completed. A portion of the protective coating 236 remains over the magnetic material layers 222 in the trench 208.
Referring to FIG. 2E, portions of the magnetic material layers 222 and the barrier layers 224 which are located vertically along the sides 214 of the trench 208 are removed by an etch process 242, exemplified in FIG. 2E by a wet etch process 242. The etch process 242 may include an electrochemical etch step in which a positive bias is applied to the magnetic material layers 222 relative to an etchant fluid of the etch process 242. The portion of the protective coating 236 over the magnetic material layers 222 protects the magnetic material layers 222 and the barrier layers 224 which are located horizontally along the bottom 212 of the trench 208. Portions of the lower encapsulation layer 218 which are located vertically along the sides 214 of the trench 208 may optionally be removed by the etch process 242. The wet etch process 242 may include an aqueous solution containing nitric acid, such as an aqueous mixture of nitric acid, acetic acid and phosphoric acid. A composition of the wet etch process 242 may be selected to provide similar etch rates of the magnetic material layers 222 and the barrier layers 224. After the etch process 242 is completed, the protective coating 236 is removed without significant degradation of the magnetic material layers 222. The protective coating 236 may be removed, for example, using a combination of an organic solvent process which dissolves organic resins in the protective coating 236 and an ash process. The magnetic material layers 222 which are located horizontally along the bottom 212 of the trench 208 provide a magnetic core 220 of the integrated magnetic device 200.
Referring to FIG. 2F, an upper encapsulation layer 226 is formed over the magnetic core 220 and extends up onto the core dielectric layer 206. The upper encapsulation layer 226 may extend along the sides 214 of the trench 208, for example, as depicted in FIG. 2F. The upper encapsulation layer 226 may have a similar composition to the lower encapsulation layer 218, and may be formed by a similar process. The upper encapsulation layer 226 may be thicker than the lower encapsulation layer 218 in order to control stress in the magnetic core 220.
A layer of trench fill material 228 is formed over the upper encapsulation layer 226, filling the trench 208 and extending over the core dielectric layer 206. The layer of trench fill material 228 may be continuous from inside the trench 208 to the core dielectric layer 206, as depicted in FIG. 2F. An upper surface of the trench fill material 228 in the trench 208 may be higher than the top surface 216 of the core dielectric layer 206. The layer of trench fill material 228 may include, for example, one or more layers of silicon nitride or silicon dioxide, or any combination thereof. Silicon dioxide in the layer of trench fill material 228 may be formed by a PECVD process using TEOS. Silicon nitride in the layer of trench fill material 228 may be formed by a PECVD process using silane and ammonia, or BTBAS. A composition and layer structure of the layer of trench fill material 228 may be selected to assist in controlling stress in the magnetic core 220.
Referring to FIG. 2G, the layer of trench fill material 228 and the upper encapsulation layer 226 are removed from over the top surface 216 of the core dielectric layer 206 by a planarization process 244, which may include a CMP process using a CMP pad 246. The CMP process may use similar chemistry as the CMP process described in reference to FIG. 2D. The planarization process 244 may also remove a portion of the core dielectric layer 206, thus lowering the top surface 216. A portion of the trench fill material 228 remains over the magnetic material layers 222 in the trench 208.
After the planarization process 244 is completed, formation of the integrated magnetic device 200 is continued, for example by forming additional dielectric layers over the core dielectric layer 206 and the trench fill material 228, to provide a structure similar to the integrated magnetic device 100 of FIG. 1A. Other structures for the integrated magnetic device 200 are within the scope of the instant example.
FIG. 3A through FIG. 3E are cross sections of another example integrated magnetic device having a magnetic core located in a trench, depicted in successive stages of another example method of formation. Referring to FIG. 3A, the integrated magnetic device 300 has a substrate 302 and a core dielectric layer 306 formed over the substrate 302. In one version of the instant example, the core dielectric layer 306 may be an extension of the substrate 302, having a same composition as material of the substrate 302 immediately below the core dielectric layer 306. A CMP stop layer 348 is formed over a top surface 316 of the core dielectric layer 306. The CMP stop layer 348 may include one or more layers of silicon nitride, silicon oxynitride, silicon carbide, or other mechanically hard material with a low removal rate in a subsequent CMP process.
A first trench 308a and a second trench 308b are formed through the CMP stop layer 348 and extending in the core dielectric layer 306. The trenches 308a and 308b may extend through the core dielectric layer 306 as depicted in FIG. 3A. A trench barrier liner 310 may optionally be formed over the CMP stop layer 348 and the core dielectric layer 306, extending into the first trench 308a and forming a continuous layer on sides 314a and a bottom 312a of the first trench 308a, and extending into the second trench 308b and forming a continuous layer on sides 314b and a bottom 312b of the second trench 308b. A lower encapsulation layer 318 may be formed on the trench barrier liner 310. The lower encapsulation layer 318 may have a composition as described in reference to the lower encapsulation layer 118 of FIG. 1A or the lower encapsulation layer 218 of FIG. 2B. The lower encapsulation layer 318 is continuous along the sides 314a and 314b and the bottoms 312a and 312b of the trenches 308a and 308b.
Magnetic material layers 322 are formed over the lower encapsulation layer 318, extending into the trenches 308a and 308b. The magnetic material layers 322 extend along the sides 314a and 314b and the bottoms 312a and 312b of the trenches 308a and 308b. The magnetic material layers 322 may be alternated with barrier layers 324. The magnetic material layers 322 may include native oxides of the magnetic material layers 322, and may not necessitate separate deposition processes.
In the instant example, a first upper encapsulation layer 350 is formed over the magnetic material layers 322. The first upper encapsulation layer 350 extends into the trenches 308a and 308b. The first upper encapsulation layer 350 may have a similar composition to the lower encapsulation layer 318.
A protective coating 336 is formed over the first upper encapsulation layer 350. In the instant example, the protective coating 336 may include one or more layers of organic polymer formed by spin coating processes.
Referring to FIG. 3B, the protective coating 336 is planarized by a planarization process 338. The planarization process 338 may include, for example, a CMP process using a CMP pad 340. The planarization process 338 may also include a leveling bake process before the CMP process. In the instant example, the planarization process 338 may remove a minimum amount of the protective coating 336 necessary to planarized the protective coating 336, leaving the first upper encapsulation layer 350 covered by the protective coating 336.
Referring to FIG. 3C, a portion of the protective coating 336 is removed by an isotropic plasma process 352 such as an ash process using oxygen radicals as indicated schematically in FIG. 3B. The isotropic plasma process 352 is continued until a portion of the first upper encapsulation layer 350 is exposed, as depicted in FIG. 3C. A portion of the protective coating 336 remains in the trenches 308a and 308b on the first upper encapsulation layer 350.
Referring to FIG. 3D, portions of the magnetic material layers 322, and the barrier layers 324 which are located over the top surface 316 of the core dielectric layer 306, and which are located vertically along the sides 314a and 314b of the trenches 308a and 308b, are removed by an etch process 342. The etch process 342 may include, for example a wet etch process or an electrochemical process. Portions of the first upper encapsulation layer 350 and the lower encapsulation layer 318 which are located vertically along the sides 314a and 314b may also be removed by the etch process 342.
The portion of the protective coating 336 over the first upper encapsulation layer 350 protects a portion of the first upper encapsulation layer 350 and the magnetic material layers 322 and the barrier layers 324 which are located horizontally along the bottoms 312a and 312b of the trenches 308a and 308b. After the etch process 342 is completed, the protective coating 336 is removed. The magnetic material layers 322 which are located horizontally along the bottoms 312a and 312b of the trenches 308a and 308b provide a magnetic core 320 of the integrated magnetic device 300.
Referring to FIG. 3E, a second upper encapsulation layer 326 is formed over the magnetic core 320 and the remaining portion of the first upper encapsulation layer 350. The second upper encapsulation layer 326 may have a similar composition to the first upper encapsulation layer 350, and may be formed by a similar process. A layer of trench fill material 328 is formed over the second upper encapsulation layer 326, filling the trenches 308a and 308b. Subsequently, the layer of trench fill material 328 and the second upper encapsulation layer 326 are planarized, for example using a CMP process, to provide an instant top surface of the integrated magnetic device 300 which is flat, extending from the CMP stop layer 348 across the trenches 308a and 308b. In the instant example, the CMP process may stop on the CMP stop layer 348, advantageously providing a well-controlled depth of the trenches 308a and 308b. A portion of the trench fill material 328 remains over the magnetic core 320 in the trenches 308a and 308b. Forming the magnetic core 320 in more the trenches 308a and 308b may advantageously reduce lateral eddy currents in the magnetic material layers 322 during operation of the integrated magnetic device 300.
FIG. 4A through FIG. 4D are cross sections of a further example integrated magnetic device having a magnetic core located in a trench, depicted in successive stages of a further example method of formation. Referring to FIG. 4A, the integrated magnetic device 400 has a substrate 402, and may have an optional trench stop layer 404 formed over the substrate 402. A core dielectric layer 406 is formed over the substrate 402, on the trench stop layer 404, if present.
A trench 408 is formed through the core dielectric layer 406 to the trench stop layer 404, if present. In the instant example, the trench 408 may have sloped sides 414 as depicted in FIG. 4A. The sloped sides 414 may be formed using an erodible etch mask. A bottom 412 of the trench 408 is flat and is located on the trench stop layer 404, if present.
A lower encapsulation layer 418 may be formed over a top surface 416 of the core dielectric layer 406, extending into the trench 408. The lower encapsulation layer 418 is continuous along the sides 414 and the bottom 412 of the trench 408. The lower encapsulation layer 418 may have a composition as described in reference to the lower encapsulation layer 118 of FIG. 1A or the lower encapsulation layer 218 of FIG. 2B.
Magnetic material layers 422 are formed over the lower encapsulation layer 418, extending into the trench 408. The magnetic material layers 422 extend along the sides 414 and the bottom 412 of the trench 408. The magnetic material layers 422 may optionally be alternated with barrier layers, not shown in FIG. 4A.
In the instant example, a first upper encapsulation layer 450 is formed over the magnetic material layers 422. The first upper encapsulation layer 450 extends into the trench 408. The first upper encapsulation layer 450 may include palladium, for example.
A protective coating 436 is formed over the first upper encapsulation layer 450. In the instant example, the protective coating 436 may include one or more layers of inorganic dielectric material, such as silicon dioxide, silicon nitride, or any combination thereof.
Referring to FIG. 4B, the protective coating 436, the first upper encapsulation layer 450, the magnetic material layers 422, and the lower encapsulation layer 418 are removed from over the top surface 416 of the core dielectric layer 406 by a planarization process 438, which may include a CMP process using a CMP pad 440. The planarization process 438 may also remove a portion of the core dielectric layer 406, thus lowering the top surface 416. The first upper encapsulation layer 450, the magnetic material layers 422, and the lower encapsulation layer 418 remain in the trench 408, horizontally along the bottom 412 and along the sides 414, after the planarization process 438 is completed. A portion of the protective coating 436 remains over the first upper encapsulation layer 450 in the trench 408.
Referring to FIG. 4C, portions of the magnetic material layers 422 which are located along the sides 414 of the trench 408 are removed by an etch process 442. Portions of the first upper encapsulation layer 450 and the lower encapsulation layer 418 which are located along the sides 414 may also be removed by the etch process 442.
The portion of the protective coating 436 over the first upper encapsulation layer 450 protects a portion of the first upper encapsulation layer 450 and the magnetic material layers 422 which are located horizontally along the bottom 412 of the trench 408. In the instant example, after the etch process 442 is completed, the protective coating 436 is left in place. The magnetic material layers 422 which are located horizontally along the bottom 412 of the trench 408 provide a magnetic core 420 of the integrated magnetic device 400.
Referring to FIG. 4D, a second upper encapsulation layer 426 is formed over sides of the magnetic core 420 and the sides 414 of the trench 408. The process of forming the second upper encapsulation layer 426 may result in a thin layer of the second upper encapsulation layer 426 being formed on sides of the protective coating 436, as shown in FIG. 4D. The second upper encapsulation layer 426 may have a similar composition to the first upper encapsulation layer 450, or may have a different composition to better control stress in the magnetic core 420. A layer of trench fill material 428 is formed over the core dielectric layer 406 and over the protective coating 436, filling the trench 408. Subsequently, the layer of trench fill material 428 and the second upper encapsulation layer 426 are removed from over the top surface 416 of the core dielectric layer 406, for example using a CMP process. A portion of the protective coating 436 and a portion of the trench fill material 428 remain in the trench 408. Using the portion of the protective coating 436 as a permanent part of the integrated magnetic device 400 may advantageously reduce fabrication cost and complexity.
While various embodiments of the present disclosure have been described above, it should be understood that they have been presented by way of example only and not limitation. Numerous changes to the disclosed embodiments can be made in accordance with the disclosure herein without departing from the spirit or scope of the disclosure. Thus, the breadth and scope of the present invention should not be limited by any of the above described embodiments. Rather, the scope of the disclosure should be defined in accordance with the following claims and their equivalents.
Patent Grant
11443879
