MAGNETIC MEMORY DEVICE

Abstract

According to one embodiment, a magnetic: memory device includes a stacked structure in which a magnetoresistance effect element and a switching element are stacked. The switching element is provided on a lower layer side of the magnetoresistance effect element, and when viewed in a stacking direction of the magnetoresistance effect element and the switching element, a pattern of the switching element is located inside a pattern of the magnetoresistance effect element.

Description

Claims

1. A magnetic memory device comprising a stacked structure in which a magnetoresistance effect element and a switching element are stacked, wherein the switching element is provided on a lower layer side of the magnetoresistance effect element, andwhen viewed in a stacking direction of the magnetoresistance effect element and the switching element, a pattern of the switching element is located inside a pattern of the magnetoresistance effect element.

2. The device of claim 1, further comprising: a first insulating layer provided on a side surface of the magnetoresistance effect element and formed of a first material; anda second insulating layer provided on a side surface of the switching element and formed of a second material different from the first material.

3. The device of claim 2, wherein a concentration of nitrogen of the first material is lower than a concentration of nitrogen of the second material.

4. The device of claim 2, wherein a concentration of hydrogen of the second material is lower than a concentration of hydrogen of the first material.

5. The device of claim 2, wherein the first material is oxide, and the second material is nitride.

6. The device of claim 2, wherein the first material and the second material contain silicon (Si), nitrogen (N) and hydrogen (H), anda composition ratio of silicon (Si), nitrogen (N) and hydrogen (H) of the first material is different from a composition ratio of silicon (Si), nitrogen (N) and hydrogen (H) of the second material.

7. The device of claim 1, wherein the magnetoresistance effect element includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

8. The device of claim 1, further comprising: a first wiring line extending in a first direction; anda second wiring line extending in a second direction intersecting the first direction, whereinthe stacked structure is provided between the first wiring line and the second wiring line.

9. A magnetic memory device comprising; a stacked structure in which a magnetoresistance effect element and a switching element are stacked;a first insulating layer provided on a side surface of the magnetoresistance effect element and formed of a first material; anda second insulating layer provided on a side surface of the switching element and formed of a second material different from the first material.

10. The device of claim 9, wherein the switching element is provided on a lower layer side of the magnetoresistance effect element.

11. The device of claim 9, wherein the switching element is provided on an upper layer side of the magnetoresistance effect element.

12. The device of claim 9, wherein a concentration of nitrogen of the first material is lower than a concentration of nitrogen of the second material.

13. The device of claim 9, wherein a concentration of hydrogen of the second material is lower than a concentration of hydrogen of the first material.

14. The device of claim 9, wherein the first material is oxide, and the second material is nitride.

15. The device of claim 9, wherein the first material and the second material contain silicon (Si), nitrogen (N) and hydrogen (H), anda composition ratio of silicon (Si), nitrogen (N) and hydrogen (H) of the first material is different from a composition ratio of silicon (Si), nitrogen (N) and hydrogen (H) of the second material.

16. The device of claim 9, wherein the magnetoresistance effect element includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

17. The device of claim 9, further comprising: a first wiring line extending in a first direction; anda second wiring line extending in a second direction intersecting the first direction, wherein the stacked structure is provided between the first wiring line and the second wiring line.