comprising two-terminal components

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H01L27/224

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/224comprising two-terminal components

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Spin orbit coupling memory device with top spin orbit coupling elec...
- Patent number 11,665,975
- Issue date May 30, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM semiconductor structure and method of forming the same
- Patent number 11,646,069
- Issue date May 9, 2023
- United Microelectronics Corp.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point spin-transfer torque magnetoresistive memory array and...
- Patent number 11,631,716
- Issue date Apr 18, 2023
- Western Digital Technologies, Inc.
- Lei Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device with ruthenium diffusion barrier
- Patent number 11,626,451
- Issue date Apr 11, 2023
- Intel Corporation
- Emily Walker
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated non volatile memory electrode thin film resistor cap and...
- Patent number 11,610,941
- Issue date Mar 21, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,605,671
- Issue date Mar 14, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point magnetic random access memory with piezoelectric selector
- Patent number 11,600,659
- Issue date Mar 7, 2023
- Intel Corporaton
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device controlling for misalignment
- Patent number 11,594,529
- Issue date Feb 28, 2023
- Samsung Electronics Co., Ltd.
- Min Chul Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce breakdown failure in a MIM capacitor
- Patent number 11,594,593
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,575,019
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device that suppresses diffusion of elements
- Patent number 11,563,168
- Issue date Jan 24, 2023
- Kioxia Corporation
- Kazuya Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MJT based anti-fuses with low programming voltage
- Patent number 11,563,054
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device comprising silicon oxide layer and conductor sharing...
- Patent number 11,557,725
- Issue date Jan 17, 2023
- Kioxia Corporation
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having first memory section and second memory...
- Patent number 11,557,631
- Issue date Jan 17, 2023
- Samsung Electronics Co., Ltd.
- Kilho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element, memory apparatus
- Patent number RE49364
- Issue date Jan 10, 2023
- Sony Corporation
- Hiroyuki Uchida
Information Patent Grant
Magnetic tunnel junction structures and methods of manufacture thereof
- Patent number 11,552,244
- Issue date Jan 10, 2023
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional selector device for memory applications
- Patent number 11,538,857
- Issue date Dec 27, 2022
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory
- Patent number 11,532,666
- Issue date Dec 20, 2022
- United Microelectronics Corp.
- Ting-Hsiang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,522,015
- Issue date Dec 6, 2022
- Samsung Electronics Co., Ltd.
- Junghoon Bak
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector element with ballast for low voltage bipolar memory devices
- Patent number 11,522,011
- Issue date Dec 6, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D vertical memory array cell structures with individual selectors...
- Patent number 11,522,016
- Issue date Dec 6, 2022
- Fu-Chang Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device
- Patent number 11,502,125
- Issue date Nov 15, 2022
- Kioxia Corporation
- Masaru Toko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device having a resistance change memory element...
- Patent number 11,495,636
- Issue date Nov 8, 2022
- Kioxia Corporation
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device
- Patent number 11,495,740
- Issue date Nov 8, 2022
- Kioxia Corporation
- Taiga Isoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent multi-bit access in cross-point array
- Patent number 11,488,662
- Issue date Nov 1, 2022
- SanDisk Technologies LLC
- Nathan Franklin
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked magnetoresistive structures and methods therefor
- Patent number 11,488,647
- Issue date Nov 1, 2022
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
SOT-MRAM cell in high density applications
- Patent number 11,469,371
- Issue date Oct 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Insulation layer arrangement for magnetic tunnel junction device
- Patent number 11,462,584
- Issue date Oct 4, 2022
- Samsung Electronics Co., Ltd.
- Yoonsung Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic storage device
- Patent number 11,462,680
- Issue date Oct 4, 2022
- Kioxia Corporation
- Daisuke Watanabe
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Memory Cell Including Two Selectors and Method of Making Same
- Publication number 20240015986
- Publication date Jan 11, 2024
- Avalanche Technology, Inc.
- Zhiqiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY CONTAINING SELECTOR RAILS...
- Publication number 20230309319
- Publication date Sep 28, 2023
- SANDISK TECHNOLOGIES LLC
- Jordan KATINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230309413
- Publication date Sep 28, 2023
- KIOXIA Corporation
- Eiji KITAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230301116
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Kenichi YOSHINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY CONTAINING SELECTOR RAILS...
- Publication number 20230292628
- Publication date Sep 14, 2023
- SANDISK TECHNOLOGIES LLC
- Jordan KATINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY INCLUDING SELF-ALIGNED DI...
- Publication number 20230292528
- Publication date Sep 14, 2023
- SANDISK TECHNOLOGIES LLC
- Jordan KATINE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230292529
- Publication date Sep 14, 2023
- KIOXIA Corporation
- Naoki AKIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230269950
- Publication date Aug 24, 2023
- KIOXIA Corporation
- Tadaaki OIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230189662
- Publication date Jun 15, 2023
- KIOXIA Corporation
- Masatoshi YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORMLY PATTERNED TWO-TERMINAL DEVICES
- Publication number 20230180485
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230180626
- Publication date Jun 8, 2023
- SK HYNIX INC.
- Gwang Hyuk SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230171967
- Publication date Jun 1, 2023
- SK HYNIX INC.
- Cha Deok DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230142183
- Publication date May 11, 2023
- SK HYNIX INC.
- Cha Deok DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230134429
- Publication date May 4, 2023
- SK HYNIX INC.
- Soo Man SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230135287
- Publication date May 4, 2023
- SK HYNIX INC.
- Jeong Hwan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE
- Publication number 20230108500
- Publication date Apr 6, 2023
- KIOXIA Corporation
- Yoshinori KUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIXED CURRENT-FORCED READ SCHEME FOR RERAM ARRAY WITH SELECTOR
- Publication number 20230100600
- Publication date Mar 30, 2023
- SANDISK TECHNOLOGIES LLC
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230082665
- Publication date Mar 16, 2023
- KIOXIA Corporation
- Masatoshi YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230079445
- Publication date Mar 16, 2023
- KIOXIA Corporation
- Kenji FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230083008
- Publication date Mar 16, 2023
- KIOXIA Corporation
- Taichi IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230071302
- Publication date Mar 9, 2023
- KIOXIA Corporation
- Yuichi ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE MEMORY DEVICE AND MANUFACTURING METHOD OF MAGNETO...
- Publication number 20230071013
- Publication date Mar 9, 2023
- KIOXIA Corporation
- Kazuya SAWADA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20230071086
- Publication date Mar 9, 2023
- UNITED MICROELECTRONICS CORP.
- Ting-Hsiang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230069841
- Publication date Mar 9, 2023
- KIOXIA Corporation
- Yoshiaki ASAO
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230065033
- Publication date Mar 2, 2023
- SK HYNIX INC.
- Si Jung YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH INTEGR...
- Publication number 20230050152
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY ARRAY
- Publication number 20230049812
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
CONCURRENT MULTI-BIT ACCESS IN CROSS-POINT ARRAY
- Publication number 20230005530
- Publication date Jan 5, 2023
- SANDISK TECHNOLOGIES LLC
- Nathan Franklin
- G11 - INFORMATION STORAGE
Information Patent Application
CONCURRENT MULTI-BIT ACCESS IN CROSS-POINT ARRAY
- Publication number 20220415387
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Nathan Franklin
- G11 - INFORMATION STORAGE
Information Patent Application
CHALCOGENIDE MATERIAL, DEVICE AND MEMORY DEVICE INCLUDING THE SAME
- Publication number 20220406842
- Publication date Dec 22, 2022
- Samsung Electronics Co., Ltd.
- Hajun SUNG
- H01 - BASIC ELECTRIC ELEMENTS

comprising two-terminal components

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Spin orbit coupling memory device with top spin orbit coupling elec...

Memory devices

MRAM semiconductor structure and method of forming the same

Cross-point spin-transfer torque magnetoresistive memory array and...

Magnetic memory device with ruthenium diffusion barrier

Integrated non volatile memory electrode thin film resistor cap and...

Double selector element for low voltage bipolar memory devices

Cross-point magnetic random access memory with piezoelectric selector

Nonvolatile memory device controlling for misalignment

Method to reduce breakdown failure in a MIM capacitor

Semiconductor device

Magnetic memory device that suppresses diffusion of elements

MJT based anti-fuses with low programming voltage

Memory device comprising silicon oxide layer and conductor sharing...

Semiconductor device having first memory section and second memory...

Memory element, memory apparatus

Magnetic tunnel junction structures and methods of manufacture thereof

Bidirectional selector device for memory applications

Magnetoresistive random access memory

Variable resistance memory device

Selector element with ballast for low voltage bipolar memory devices

3D vertical memory array cell structures with individual selectors...

Magnetoresistive memory device

Nonvolatile memory device having a resistance change memory element...

Magnetoresistive memory device

Concurrent multi-bit access in cross-point array

Stacked magnetoresistive structures and methods therefor

SOT-MRAM cell in high density applications

Insulation layer arrangement for magnetic tunnel junction device

Magnetic storage device

Patents Applicationslast 30 patents

Memory Cell Including Two Selectors and Method of Making Same

CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY CONTAINING SELECTOR RAILS...

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY CONTAINING SELECTOR RAILS...

CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY INCLUDING SELF-ALIGNED DI...

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

UNIFORMLY PATTERNED TWO-TERMINAL DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE

MIXED CURRENT-FORCED READ SCHEME FOR RERAM ARRAY WITH SELECTOR

MAGNETIC MEMORY DEVICE

MEMORY DEVICE

MEMORY DEVICE

MEMORY DEVICE

MAGNETORESISTANCE MEMORY DEVICE AND MANUFACTURING METHOD OF MAGNETO...

MAGNETORESISTIVE RANDOM ACCESS MEMORY

MAGNETIC MEMORY DEVICE

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH INTEGR...

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY ARRAY

CONCURRENT MULTI-BIT ACCESS IN CROSS-POINT ARRAY

CONCURRENT MULTI-BIT ACCESS IN CROSS-POINT ARRAY

CHALCOGENIDE MATERIAL, DEVICE AND MEMORY DEVICE INCLUDING THE SAME