Magnetic memory

Abstract

A magnetoresistance effect element is also located between second wiring and common wiring. The magnetoresistance effect element is electrically connected to the second wiring without a spin filter. When a reading current is supplied between the second wiring for supplying a reading current and the common wiring, since this is not supplied via a spin filter, no spin polarized current is supplied into the magnetoresistance effect element, so that it becomes difficult to magnetization-reverse a magnetosensitive layer. Even in a structure where, in order to improve recording density, the magnetosensitive layer is reduced in area so as to lower a writing current, no magnetization reversal occurs due to a supply of the reading current, and information can be read out without making the reading current considerably small in comparison with the writing current.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of one storage area P (X, Y).

FIG. 2A shows a longitudinal sectional view of a magnetoresistance effect element MR (with a parallel direction of magnetization).

FIG. 2B shows a longitudinal sectional view of a magnetoresistance effect element MR (with an antiparallel direction of magnetization).

FIG. 3 is a plan view of a storage area P (X, Y).

FIG. 4 is a longitudinal sectional view of a storage element including a magnetoresistance effect element MR.

FIG. 5 is a graph showing a relationship between a current value supplied to a conventional magnetoresistance effect element MR and a resistance value of the magnetoresistance effect element MR.

FIG. 6 is a graph showing a relationship between a current value of a writing current I_W supplied to a magnetoresistance effect element MR according to the present embodiment and a resistance value of the magnetoresistance effect element MR.

FIG. 7 is a graph showing a relationship between a current value of a reading current I_R supplied to a magnetoresistance effect element MR according to the present embodiment and a resistance value of the magnetoresistance effect element MR.

FIG. 8A is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 8B is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 8C is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 8D is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 8E is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 9A is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 9B is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 9C is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 9D is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 10A is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 10B is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 10C is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 11A is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 11B is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 11C is a longitudinal sectional view of a storage element intermediate for explaining a manufacturing method of a storage element.

FIG. 12 is a longitudinal sectional view of a storage element of a magnetic memory according to another embodiment.

Claims

1. A magnetic memory formed by arranging a plurality of storage areas, wherein each storage area comprises:a first wiring for supplying a writing current;a second wiring for supplying a reading current;a common wiring;a magnetoresistance effect element; anda spin filter provided on the magnetoresistance effect element, andsaid magnetoresistance effect element is located between said first wiring and said common wiring,said magnetoresistance effect element is located between said second wiring and said common wiring,said magnetoresistance effect element is electrically connected to said common wiring,said magnetoresistance effect element is connected to said first wiring via said spin filter, andsaid magnetoresistance effect element is electrically connected to said second wiring without said spin filter.

2. The magnetic memory according to claim 1, wherein said spin filter of each storage area has:a nonmagnetic conductive layer provided on said magnetoresistance effect element; anda pinned layer in contact with said nonmagnetic conductive layer,said first wiring is provided on a first region on said pinned layer, andsaid second wiring is provided on a second region adjacent to said first region of said nonmagnetic conductive layer.

3. The magnetic memory according to claim 2, wherein in each storage area, between said first region and said second region, a step is interposed, and a margin region where neither said first wiring nor said second wiring is formed exists.

4. The magnetic memory according to claim 1, wherein each storage area further comprises a second spin filter interposed between the magnetoresistance effect element and the common wiring.

5. The magnetic memory according to claim 2, wherein an area S2 of said second region is equal to or less than 50% of an area S1 of said first region.