using elements in which the storage effect is based on magnetic spin effect

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/16using elements in which the storage effect is based on magnetic spin effect

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Patents Grantslast 30 patents

Information Patent Grant
Structure and method for an MRAM device with a multi-layer top elec...
- Patent number 12,310,255
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Hao Liao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction device and memory device including the...
- Patent number 12,310,250
- Issue date May 20, 2025
- Samsung Electronics Co., Ltd.
- Kwangseok Kim
- G01 - MEASURING TESTING
Information Patent Grant
Random swap injection
- Patent number 12,308,064
- Issue date May 20, 2025
- Kepler Computing Inc.
- Christopher B. Wilkerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,310,036
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance memory device and method of manufacturing magneto...
- Patent number 12,310,251
- Issue date May 20, 2025
- Kioxia Corporation
- Takao Ochiai
- G11 - INFORMATION STORAGE
Information Patent Grant
Secure wear levelling of non-volatile memory based on Galois field...
- Patent number 12,300,295
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Martin Hassner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point array refresh scheme
- Patent number 12,300,296
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ion beam etching with sidewall cleaning
- Patent number 12,302,760
- Issue date May 13, 2025
- Lam Research Corporation
- Thorsten Lill
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 12,302,587
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction devices
- Patent number 12,302,761
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsi-Wen Tien
- G11 - INFORMATION STORAGE
Information Patent Grant
Cryptographic MRAM and methods thereof
- Patent number 12,299,182
- Issue date May 13, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic tunnel junction devices
- Patent number 12,298,362
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory structure
- Patent number 12,300,292
- Issue date May 13, 2025
- Industrial Technology Research Institute
- Hsin-Han Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 12,300,293
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Cantilever nanoelectromechanical decoder circuit and methods for fo...
- Patent number 12,300,294
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, and semiconductor structure and forming method thereof
- Patent number 12,295,135
- Issue date May 6, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Shih-Hung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system
- Patent number 12,293,096
- Issue date May 6, 2025
- Kioxia Corporation
- Kosuke Hatsuda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic memory device
- Patent number 12,295,268
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Byongguk Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-state spintronic device, memory cell, memory array and read-w...
- Patent number 12,293,781
- Issue date May 6, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and method for implementation of symmetric tree mode...
- Patent number 12,293,796
- Issue date May 6, 2025
- SanDisk Technologies, Inc.
- Eran Sharon
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetization rotational element, magnetoresistance effect element,...
- Patent number 12,290,002
- Issue date Apr 29, 2025
- TDK Corporation
- Yugo Ishitani
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of operating the same
- Patent number 12,290,007
- Issue date Apr 29, 2025
- Samsung Electronics Co., Ltd.
- Siyeon Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic recording element, and h...
- Patent number 12,288,576
- Issue date Apr 29, 2025
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for independent memory bank maintenance and memory devices...
- Patent number 12,288,579
- Issue date Apr 29, 2025
- George B. Raad
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device structure and manufacturing method thereof
- Patent number 12,289,892
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque magnetoresistive memory device with a free lay...
- Patent number 12,283,296
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Tiffany Santos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 12,283,297
- Issue date Apr 22, 2025
- Kioxia Corporation
- Kuniaki Sugiura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory with data scrubbing
- Patent number 12,283,298
- Issue date Apr 22, 2025
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and method for inference of read thresholds based on...
- Patent number 12,283,328
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Eran Sharon
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,284,812
- Issue date Apr 22, 2025
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS
- Publication number 20250169372
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING...
- Publication number 20250166683
- Publication date May 22, 2025
- Sony Semiconductor Solutions Corporation
- HIROYUKI UCHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD OF IMPLEMENTING A PROBABILISTIC BIT (P-BIT) CI...
- Publication number 20250169370
- Publication date May 22, 2025
- KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS
- Saleh Ahmad S BUNAIYAN
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...
- Publication number 20250166684
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Application
READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...
- Publication number 20250166685
- Publication date May 22, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong KANG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20250169368
- Publication date May 22, 2025
- UNITED MICROELECTRONICS CORP.
- Chau-Chung Hou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250160217
- Publication date May 15, 2025
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE DEVICE
- Publication number 20250157517
- Publication date May 15, 2025
- Sony Semiconductor Solutions Corporation
- YUSUKE SHUTO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20250160218
- Publication date May 15, 2025
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250157516
- Publication date May 15, 2025
- Samsung Electronics Co., Ltd.
- Yongjae Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250151259
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Hongjun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE WITH NEURAL NETWORK
- Publication number 20250149085
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Jung-Hoon CHUN
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT
- Publication number 20250151630
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Ku SHEN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20250140295
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay CHUANG
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY
- Publication number 20250140297
- Publication date May 1, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME
- Publication number 20250140312
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS
- Publication number 20250142840
- Publication date May 1, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH A BIAS CIRCUIT
- Publication number 20250140296
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Access Control through Permissions Specified in Page Table E...
- Publication number 20250139016
- Publication date May 1, 2025
- Micron Technology, Inc.
- Steven Jeffrey Wallach
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS AND METHODS FOR DETECTING NETWORK OUTAGES
- Publication number 20250142000
- Publication date May 1, 2025
- T-Mobile USA, Inc.
- Shon Lonkar
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE MAGNETORESISTIVE MEMORY STRUCTURE
- Publication number 20250133968
- Publication date Apr 24, 2025
- NATIONAL APPLIED RESEARCH LABORATORIES
- Ya-Jui Tsou
- G11 - INFORMATION STORAGE
Information Patent Application
OPTICAL SENSOR
- Publication number 20250133851
- Publication date Apr 24, 2025
- TDK Corporation
- Hideaki FUKUZAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20250127061
- Publication date Apr 17, 2025
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH WRITE PULSE TRIMMING
- Publication number 20250118367
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH UNIPOLAR SELECTORS
- Publication number 20250120093
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR
- Publication number 20250118349
- Publication date Apr 10, 2025
- Western Digital Technologies, Inc.
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20250120092
- Publication date Apr 10, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20250120322
- Publication date Apr 10, 2025
- Sony Semiconductor Solutions Corporation
- YUTAKA HIGO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250120323
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Nien-Yu Tai
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-TAPERED MRAM DEVICE STRUCTURE
- Publication number 20250120324
- Publication date Apr 10, 2025
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE

using elements in which the storage effect is based on magnetic spin effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Structure and method for an MRAM device with a multi-layer top elec...

Magnetic tunneling junction device and memory device including the...

Random swap injection

Threshold voltage-modulated memory device using variable-capacitanc...

Magnetoresistance memory device and method of manufacturing magneto...

Secure wear levelling of non-volatile memory based on Galois field...

Cross-point array refresh scheme

Ion beam etching with sidewall cleaning

Memory device and semiconductor die, and method of fabricating memo...

Magnetic tunnel junction devices

Cryptographic MRAM and methods thereof

Magnetic tunnel junction devices

Magnetic random access memory structure

Method for writing to magnetic random access memory

Cantilever nanoelectromechanical decoder circuit and methods for fo...

Memory device, and semiconductor structure and forming method thereof

Memory system

Magnetic memory device

Three-state spintronic device, memory cell, memory array and read-w...

Storage system and method for implementation of symmetric tree mode...

Magnetization rotational element, magnetoresistance effect element,...

Magnetic memory device and method of operating the same

Magnetoresistance effect element, magnetic recording element, and h...

Methods for independent memory bank maintenance and memory devices...

Memory device structure and manufacturing method thereof

Spin-transfer torque magnetoresistive memory device with a free lay...

Memory device

Magnetoresistive random access memory with data scrubbing

Storage system and method for inference of read thresholds based on...

Semiconductor structure and method for forming the same

Patents Applicationslast 30 patents

PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS

STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING...

APPARATUS AND METHOD OF IMPLEMENTING A PROBABILISTIC BIT (P-BIT) CI...

SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...

READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...

METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE

MAGNETORESISTIVE RANDOM ACCESS MEMORY

NON-VOLATILE STORAGE DEVICE

SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

MAGNETIC MEMORY DEVICE

SEMICONDUCTOR DEVICE

DEVICE WITH NEURAL NETWORK

STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT

METHOD FOR FORMING SEMICONDUCTOR DEVICE

MAGNETORESISTIVE EFFECT MEMORY

MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS

MEMORY DEVICE WITH A BIAS CIRCUIT

Memory Access Control through Permissions Specified in Page Table E...

SYSTEMS AND METHODS FOR DETECTING NETWORK OUTAGES

SPIN-ORBIT TORQUE MAGNETORESISTIVE MEMORY STRUCTURE

OPTICAL SENSOR

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MEMORY DEVICE WITH WRITE PULSE TRIMMING

MEMORY CELL WITH UNIPOLAR SELECTORS

READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR

MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MULTI-TAPERED MRAM DEVICE STRUCTURE