using elements in which the storage effect is based on magnetic spin effect

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/16using elements in which the storage effect is based on magnetic spin effect

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Patents Grantslast 30 patents

Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 12,245,516
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive stack and method of fabricating same
- Patent number RE50331
- Issue date Mar 4, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Renu Whig
Information Patent Grant
Magnetic memory device
- Patent number 12,243,572
- Issue date Mar 4, 2025
- Kioxia Corporation
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory
- Patent number 12,243,588
- Issue date Mar 4, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic laminated film, magnetic memory element, magnetic memory,...
- Patent number 12,236,988
- Issue date Feb 25, 2025
- Tohoku University
- Yoshiaki Saito
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Concurrent multi-bit self-referenced read of programmable resistanc...
- Patent number 12,237,010
- Issue date Feb 25, 2025
- SanDisk Technologies, Inc.
- Nathan Franklin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read and programming decoding system for analog neural memory
- Patent number 12,237,011
- Issue date Feb 25, 2025
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic memory device
- Patent number 12,236,990
- Issue date Feb 25, 2025
- Kioxia Corporation
- Hideyuki Sugiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Layer structure for magnetic memory element, magnetic memory elemen...
- Patent number 12,236,989
- Issue date Feb 25, 2025
- Kyoto University
- Teruo Ono
- G11 - INFORMATION STORAGE
Information Patent Grant
Asynchronous true random number generator using STT-MTJ
- Patent number 12,230,306
- Issue date Feb 18, 2025
- Technion Research & Development Foundation Limited
- Shahar Kvatinsky
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory error detection and correction
- Patent number 12,229,003
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive random access memory
- Patent number 12,232,425
- Issue date Feb 18, 2025
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Performance of magnetic channel junctions
- Patent number 12,230,307
- Issue date Feb 18, 2025
- MARVELL ASIA PTE. LTD.
- Peng Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque type magnetoresistance effect element, and method...
- Patent number 12,232,426
- Issue date Feb 18, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method to increase effective capacitance with layout...
- Patent number 12,230,569
- Issue date Feb 18, 2025
- Intel Corporation
- Kushal Sreedhar
- G11 - INFORMATION STORAGE
Information Patent Grant
Device with neural network
- Patent number 12,230,321
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jung-Hoon Chun
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,232,336
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit and method of operating same
- Patent number 12,229,006
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Lien Linus Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-local antiferromagnetic memory storage
- Patent number 12,230,308
- Issue date Feb 18, 2025
- The Regents of the University of California
- James G. Analytis
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage apparatus
- Patent number 12,223,991
- Issue date Feb 11, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Taro Tatsuno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic recording array
- Patent number 12,225,830
- Issue date Feb 11, 2025
- TDK Corporation
- Shogo Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage controlled magnetic anisotropy (VCMA) memory devices includ...
- Patent number 12,225,828
- Issue date Feb 11, 2025
- SanDisk Technologies, Inc.
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory access control through permissions specified in page table e...
- Patent number 12,222,869
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Steven Jeffrey Wallach
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,223,989
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage cell and data read/write method and storage array thereof
- Patent number 12,223,990
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES INC.
- Xiaoguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit device
- Patent number 12,219,880
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 12,217,775
- Issue date Feb 4, 2025
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory readout circuit and method
- Patent number 12,217,810
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Min Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array connections
- Patent number 12,217,790
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and hybrid transistors
- Patent number 12,219,783
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETO RESISTIVE MEMORY DEVICE
- Publication number 20250069633
- Publication date Feb 27, 2025
- Centre National de la Recherche Scientifique
- Victorien BRECTE
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE AND METHOD FOR INFORMATION PROCESSING
- Publication number 20250061942
- Publication date Feb 20, 2025
- HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.
- Helmut SCHULTHEISS
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Devices Comprising Magnetic Tracks Individually Comprising a...
- Publication number 20250061956
- Publication date Feb 20, 2025
- Micron Technology, Inc.
- Livio Baldi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layer a...
- Publication number 20250063952
- Publication date Feb 20, 2025
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
NEUROMORPHIC DEVICE
- Publication number 20250061322
- Publication date Feb 20, 2025
- TDK Corporation
- Shogo YAMADA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide...
- Publication number 20250062060
- Publication date Feb 20, 2025
- TSINGHUA UNIVERSITY
- Tianxiang NAN
- G11 - INFORMATION STORAGE
Information Patent Application
MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM
- Publication number 20250061933
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACT...
- Publication number 20250054522
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20250054530
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Tae Jung HA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
- Publication number 20250056812
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zong-You Luo
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250046357
- Publication date Feb 6, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND ACCESS METHOD
- Publication number 20250046356
- Publication date Feb 6, 2025
- Huawei Technologies Co., Ltd
- Jeffrey Junhao XU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...
- Publication number 20250048648
- Publication date Feb 6, 2025
- UNITED MICROELECTRONICS CORP.
- Jia-Rong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250040149
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Ya-Huei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...
- Publication number 20250028458
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jongsun PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250029644
- Publication date Jan 23, 2025
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Unghwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION
- Publication number 20250029645
- Publication date Jan 23, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF OPERATING MAGNETIC MEMORY DEVICES
- Publication number 20250029670
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Unghwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACKED FILM AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20250031581
- Publication date Jan 23, 2025
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE MEMORY FOR MONOLITHIC DATA PROCESSING
- Publication number 20250022497
- Publication date Jan 16, 2025
- Honeywell International Inc.
- Romney R. Katti
- G11 - INFORMATION STORAGE
Information Patent Application
Circuits with Charge Trapping Transistors
- Publication number 20250024688
- Publication date Jan 16, 2025
- Cirrus Logic International Semiconductor Ltd.
- John P. LESSO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC MEMORY AND MEMORY SYSTEM
- Publication number 20250022498
- Publication date Jan 16, 2025
- KIOXIA Corporation
- Shogo MUTO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM AND OPERATING METHOD
- Publication number 20250022499
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Application
Doping Process To Refine Grain Size For Smoother BiSb Film Surface
- Publication number 20250014618
- Publication date Jan 9, 2025
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
- Publication number 20250014619
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...
- Publication number 20250014620
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Chanho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250008743
- Publication date Jan 2, 2025
- UNITED MICROELECTRONICS CORP.
- Kun-Ju Li
- G11 - INFORMATION STORAGE
Information Patent Application
Storage Array, and Interconnection Structure and Method for Operati...
- Publication number 20250006228
- Publication date Jan 2, 2025
- ZHEJIANG HIKSTOR TECHNOLOGY CO., LTD.
- Kunkun LI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Publication number 20250006237
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CIRCUIT
- Publication number 20250006238
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- DAISHI ISOGAI
- G11 - INFORMATION STORAGE

using elements in which the storage effect is based on magnetic spin effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Self-aligned encapsulation hard mask to separate physically under-e...

Magnetoresistive stack and method of fabricating same

Magnetic memory device

Semiconductor memory

Magnetic laminated film, magnetic memory element, magnetic memory,...

Concurrent multi-bit self-referenced read of programmable resistanc...

Read and programming decoding system for analog neural memory

Magnetic memory device

Layer structure for magnetic memory element, magnetic memory elemen...

Asynchronous true random number generator using STT-MTJ

Memory error detection and correction

Magnetoresistive random access memory

Performance of magnetic channel junctions

Spin-orbit torque type magnetoresistance effect element, and method...

Apparatus and method to increase effective capacitance with layout...

Device with neural network

Threshold voltage-modulated memory device using variable-capacitanc...

Integrated circuit and method of operating same

Non-local antiferromagnetic memory storage

Semiconductor storage apparatus

Magnetoresistance effect element and magnetic recording array

Voltage controlled magnetic anisotropy (VCMA) memory devices includ...

Memory access control through permissions specified in page table e...

Semiconductor device and method for fabricating the same

Storage cell and data read/write method and storage array thereof

Integrated circuit device

Magnetoresistance effect element and Heusler alloy

Memory readout circuit and method

Memory array connections

Semiconductor devices and hybrid transistors

Patents Applicationslast 30 patents

MAGNETO RESISTIVE MEMORY DEVICE

DEVICE AND METHOD FOR INFORMATION PROCESSING

Memory Devices Comprising Magnetic Tracks Individually Comprising a...

Magnetic Memory Element Including Perpendicular Enhancement Layer a...

NEUROMORPHIC DEVICE

Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide...

MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM

SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACT...

MEMORY DEVICE AND OPERATING METHOD THEREOF

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

ELECTRONIC DEVICE

MEMORY AND ACCESS METHOD

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...

LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY

FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...

MAGNETIC MEMORY DEVICE

LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION

METHODS OF OPERATING MAGNETIC MEMORY DEVICES

MAGNETIC STACKED FILM AND MAGNETORESISTIVE EFFECT ELEMENT

MAGNETO RESISTIVE MEMORY FOR MONOLITHIC DATA PROCESSING

Circuits with Charge Trapping Transistors

MAGNETIC MEMORY AND MEMORY SYSTEM

MEMORY SYSTEM AND OPERATING METHOD

Doping Process To Refine Grain Size For Smoother BiSb Film Surface

GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME

MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Storage Array, and Interconnection Structure and Method for Operati...

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

SEMICONDUCTOR CIRCUIT