using elements in which the storage effect is based on magnetic spin effect

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/16using elements in which the storage effect is based on magnetic spin effect

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Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive random access memory device and method for fabrica...
- Patent number 12,369,497
- Issue date Jul 22, 2025
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM top electrode structure with liner layer
- Patent number 12,369,494
- Issue date Jul 22, 2025
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory structure and method for forming the semicondu...
- Patent number 12,361,994
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chuan Su
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque (SOT) MRAM with doubled layer of SOT metal
- Patent number 12,361,995
- Issue date Jul 15, 2025
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ operation methods employing opposite polarity recovery pulse
- Patent number 12,361,997
- Issue date Jul 15, 2025
- Kioxia Corporation
- Naoki Matsushita
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetization rotational element, magnetoresistance effect element,...
- Patent number 12,364,166
- Issue date Jul 15, 2025
- TDK Corporation
- Eiji Komura
- G11 - INFORMATION STORAGE
Information Patent Grant
Reactive serial resistance reduction for magnetoresistive random-ac...
- Patent number 12,364,164
- Issue date Jul 15, 2025
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for spin orbit torque based memory device
- Patent number 12,361,996
- Issue date Jul 15, 2025
- Ceremorphic, Inc.
- Akshaykumar Salimath
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistorless memory cell
- Patent number 12,354,634
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM reference current
- Patent number 12,354,635
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 12,356,865
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method of manufacture
- Patent number 12,356,867
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Chia-Hua Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,356,868
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- MingYuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Photonic spin register, information writing method, and information...
- Patent number 12,347,506
- Issue date Jul 1, 2025
- The University of Tokyo
- Satoru Nakatsuji
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices, circuits and methods of adjusting a sensing current...
- Patent number 12,347,474
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of operating a voltage-controlled magnetic...
- Patent number 12,347,475
- Issue date Jul 1, 2025
- Imec VZW
- Woojin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory structures and methods of forming the same
- Patent number 12,349,364
- Issue date Jul 1, 2025
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kian Hui Goh
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) element and its fabrication process
- Patent number 12,349,600
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ya-Ling Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque magnetic random access memory circuit and layout...
- Patent number 12,340,830
- Issue date Jun 24, 2025
- United Microelectronics Corp.
- Chun-Yen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-rail sense circuit with pre-charge transistors and memory cir...
- Patent number 12,340,841
- Issue date Jun 24, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Siva Kumar Chinthu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including three-dimensional racetrack and operating m...
- Patent number 12,340,831
- Issue date Jun 24, 2025
- Samsung Electronics Co., Ltd.
- Youngnam Hwang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and semiconductor device
- Patent number 12,339,334
- Issue date Jun 24, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Katsumi Suemitsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnonic active ring memory and logic
- Patent number 12,340,856
- Issue date Jun 24, 2025
- The Regents of the University of California
- Aleksandr Khitun
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MRAM stacks, MRAM devices and methods of forming the same
- Patent number 12,334,238
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory stored with encoded data
- Patent number 12,334,151
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory using spin current, operating method thereof, and e...
- Patent number 12,334,126
- Issue date Jun 17, 2025
- Samsung Electronics Co., Ltd.
- Kwangseok Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-dimensional material-based selector with stack unit, memory uni...
- Patent number 12,336,188
- Issue date Jun 17, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic array and method for manufacturing magnetic array
- Patent number 12,336,189
- Issue date Jun 17, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell array with increased source bias voltage
- Patent number 12,336,180
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Jun Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory including transistors and magnetoresistive elements...
- Patent number 12,336,191
- Issue date Jun 17, 2025
- Kioxia Corporation
- Yoshihiro Ueda
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR INDEPENDENT MEMORY BANK MAINTENANCE AND MEMORY DEVICES...
- Publication number 20250239292
- Publication date Jul 24, 2025
- Lodestar Licensing Group LLC
- George B. Raad
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE HAVING ROWS OF MRAM CELLS CONFIGURED FOR CONCURRENT WRITING...
- Publication number 20250239285
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Jen Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250241208
- Publication date Jul 24, 2025
- Samsung Electronics Co., Ltd.
- Jae Hong LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250234788
- Publication date Jul 17, 2025
- Samsung Electronics Co., Ltd.
- Jeong-Heon Park
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20250231260
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...
- Publication number 20250232789
- Publication date Jul 17, 2025
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20250228136
- Publication date Jul 10, 2025
- Samsung Electronics Co., Ltd.
- Wonhyeok Heo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING REFERENCE RESISTANCE
- Publication number 20250226049
- Publication date Jul 10, 2025
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Dopants to Decrease BiSbX's and YBiPt's Bandgap for Optimal Current...
- Publication number 20250228140
- Publication date Jul 10, 2025
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY CONNECTIONS
- Publication number 20250218500
- Publication date Jul 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20250210060
- Publication date Jun 26, 2025
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210083
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM)
- Publication number 20250210086
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250212695
- Publication date Jun 26, 2025
- Samsung Electronics Co., Ltd.
- Jae Hoon Kim
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210085
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
VCMA MRAM DEVICE
- Publication number 20250210082
- Publication date Jun 26, 2025
- IMEC vzw
- Woojin Kim
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210084
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250212693
- Publication date Jun 26, 2025
- UNITED MICROELECTRONICS CORP.
- Chih-Wei Kuo
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250212420
- Publication date Jun 26, 2025
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SRAM
- Publication number 20250210107
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250210121
- Publication date Jun 26, 2025
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Stuart Papworth Parkin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250212696
- Publication date Jun 26, 2025
- UNITED MICROELECTRONICS CORP.
- Jin-Yan Chiou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250201291
- Publication date Jun 19, 2025
- Industrial Technology Research Institute
- Hsin-Han Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE EFFECT ELEMENT, AN...
- Publication number 20250204263
- Publication date Jun 19, 2025
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250204266
- Publication date Jun 19, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- G11 - INFORMATION STORAGE
Information Patent Application
NEUROMORPHIC DEVICES OF HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MA...
- Publication number 20250204269
- Publication date Jun 19, 2025
- International Business Machines Corporation
- See-Hun Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY HAVING A RING OF MAGNETIC TUN...
- Publication number 20250204270
- Publication date Jun 19, 2025
- UNITED MICROELECTRONICS CORP.
- Chung-Liang Chu
- G11 - INFORMATION STORAGE
Information Patent Application
HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MAGNETIC TUNNEL JUNCTIONS...
- Publication number 20250201290
- Publication date Jun 19, 2025
- International Business Machines Corporation
- See-Hun Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND A METHOD FOR FORMING THE MAGNETIC DEVICE
- Publication number 20250194430
- Publication date Jun 12, 2025
- National University of Singapore
- Zhi Shiuh Lim
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250194436
- Publication date Jun 12, 2025
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE

using elements in which the storage effect is based on magnetic spin effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistive random access memory device and method for fabrica...

MRAM top electrode structure with liner layer

Semiconductor memory structure and method for forming the semicondu...

Spin-orbit-torque (SOT) MRAM with doubled layer of SOT metal

MTJ operation methods employing opposite polarity recovery pulse

Magnetization rotational element, magnetoresistance effect element,...

Reactive serial resistance reduction for magnetoresistive random-ac...

System and method for spin orbit torque based memory device

Transistorless memory cell

MRAM reference current

Multilayer structure for reducing film roughness in magnetic devices

Semiconductor structure and method of manufacture

Magnetic device and magnetic random access memory

Photonic spin register, information writing method, and information...

Memory devices, circuits and methods of adjusting a sensing current...

Memory device and method of operating a voltage-controlled magnetic...

Memory structures and methods of forming the same

Magnetic tunnel junction (MTJ) element and its fabrication process

Spin-orbit torque magnetic random access memory circuit and layout...

Multi-rail sense circuit with pre-charge transistors and memory cir...

Memory device including three-dimensional racetrack and operating m...

Magnetoresistive element and semiconductor device

Magnonic active ring memory and logic

MRAM stacks, MRAM devices and methods of forming the same

Non-volatile memory stored with encoded data

Magnetic memory using spin current, operating method thereof, and e...

Two-dimensional material-based selector with stack unit, memory uni...

Magnetic array and method for manufacturing magnetic array

Memory cell array with increased source bias voltage

Magnetic memory including transistors and magnetoresistive elements...

Patents Applicationslast 30 patents

METHODS FOR INDEPENDENT MEMORY BANK MAINTENANCE AND MEMORY DEVICES...

DEVICE HAVING ROWS OF MRAM CELLS CONFIGURED FOR CONCURRENT WRITING...

SEMICONDUCTOR DEVICE

MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MAGNETIC TUNNEL JUNCTION DEVICES

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...

VARIABLE RESISTANCE MEMORY DEVICE

MEMORY DEVICE INCLUDING REFERENCE RESISTANCE

Dopants to Decrease BiSbX's and YBiPt's Bandgap for Optimal Current...

MEMORY ARRAY CONNECTIONS

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

VCMA MRAM DEVICE

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

NONVOLATILE SRAM

MAGNETIC MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE EFFECT ELEMENT, AN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NEUROMORPHIC DEVICES OF HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MA...

MAGNETORESISTIVE RANDOM ACCESS MEMORY HAVING A RING OF MAGNETIC TUN...

HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MAGNETIC TUNNEL JUNCTIONS...

MAGNETIC DEVICE AND A METHOD FOR FORMING THE MAGNETIC DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME