commonly assigned U.S. patent applications bearing Ser. Nos. 09/295,267 and 09/547,439 describe the use of a RuAl seed layer with a B2 crystallographic structure to obtain an underlayer with a preferred in-plane orientation of (200) and a cobalt alloy magnetic film with the preferred in-plane orientation of (11{overscore (2)}0). Co-pending, commonly assigned U.S. patent application bearing Ser. No. 09/500,710 describes the use of an amorphous or nanocrystalline CrTa or AlTi as a pre-seed layer.
Number | Name | Date | Kind |
---|---|---|---|
5693426 | Lee et al. | Dec 1997 | A |
5789056 | Bian et al. | Aug 1998 | A |
5879783 | Chang et al. | Mar 1999 | A |
5922456 | Tanahashi et al. | Jul 1999 | A |
5993956 | Lambeth et al. | Nov 1999 | A |
6001447 | Tanahashi et al. | Dec 1999 | A |
6010795 | Chen et al. | Jan 2000 | A |
6077586 | Bian et al. | Jun 2000 | A |
6077603 | Zhang | Jun 2000 | A |
6143388 | Bian et al. | Nov 2000 | A |
6159625 | Ueno | Dec 2000 | A |
6174597 | Yusu et al. | Jan 2001 | B1 |
Number | Date | Country |
---|---|---|
60076016 | Apr 1985 | JP |
363187416 | Aug 1988 | JP |
11110733 | Apr 1999 | JP |
11232630 | Aug 1999 | JP |
11328646 | Nov 1999 | JP |
2000-020936 | Jan 2000 | JP |
Entry |
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T.D.Lee, et al. “A Double Underlayer for Co-Based Longitudinal Recording Thin Film Media,” IEEE Transactions on Magnetics, vol. 35, No. 5, Sep. 1999, pp. 2628ff. |
T.P.Nolan, et al., “Independent Optimization of Nucleation and Growth Processes of Titanium-alloy Underlayers for Cobalt-alloy Perpendicular Recording Media,” Materials Research Soc. Symp. Process. vol. 403, 1996, pp. 713ff. |
T.Kanbe,et al., “Effects of underlayer grain size on the microstructure of the magnetic layer in CoCrPt media,” IEEE Transactions on Magnetics, vol. 35, No. 5, Sep. 1999, pp. 2667ff. |
M.Mirzamaani, et al., “Recording Performance of Thin Film Media With Various Crystallographic Preferred Orientations on Glass Substrates,” IEEE Transactions on Magnetics, vol. 34, No. 4, Jul. 1998, pp. 1588ff. |
L.Lee, et al., “Seed layer induced (002) crystallographic texture in NiAl underlayers,” J. Appl. Physical. 79(8). Apr. 15, 1996. |