Spin-exchange-coupled multilayers

Industry

CPC
H01F10/32

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/32Spin-exchange-coupled multilayers

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
System and method for skyrmion based logic device
- Patent number 12,211,641
- Issue date Jan 28, 2025
- CEREMPRPHIC, INC.
- Sanghamitra Debroy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device and method of operating same using f...
- Patent number 12,211,535
- Issue date Jan 28, 2025
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Iridium-manganese-based tunnel magnetoresistance sensing element wi...
- Patent number 12,210,075
- Issue date Jan 28, 2025
- Infineon Technologies AG
- Bernhard Endres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 12,213,385
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive devices comprising a synthetic antiferromagnetic c...
- Patent number 12,207,563
- Issue date Jan 21, 2025
- Western Digital Technologies, Inc.
- Susumu Okamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method for MRAM devices having spacer element
- Patent number 12,201,031
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin memory encryption
- Patent number 12,201,029
- Issue date Jan 14, 2025
- Colorado State University Research Foundation
- Kristen Buchanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly textured 001 BiSb and materials for making same
- Patent number 12,176,132
- Issue date Dec 24, 2024
- Western Digital Technologies, Inc.
- Quang Le
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Warped magnetic tunnel junctions and bit-patterned media
- Patent number 12,170,162
- Issue date Dec 17, 2024
- Jannier Maximo Roiz-Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 12,167,699
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Reconfigurable PUF device based on fully electric field-controlled...
- Patent number 12,160,529
- Issue date Dec 3, 2024
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong Xing
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin-orbit torque (SOT)-based magnetic tunnel junction and method o...
- Patent number 12,161,051
- Issue date Dec 3, 2024
- Korea University Research and Business Foundation
- Young Keun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 12,156,479
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Lin Huang
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Layout pattern for magnetoresistive random access memory
- Patent number 12,150,315
- Issue date Nov 19, 2024
- United Microelectronics Corp.
- Ya-Huei Tsai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory having a blocking layer on me...
- Patent number 12,150,313
- Issue date Nov 19, 2024
- United Microelectronics Corp.
- Jia-Rong Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element with free-layer and method of manufacturin...
- Patent number 12,135,226
- Issue date Nov 5, 2024
- Analog Devices International Unlimited Company
- Jochen Schmitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic storage device
- Patent number 12,133,472
- Issue date Oct 29, 2024
- Kioxia Corporation
- Katsuhiko Koui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic gates based on phase shifters
- Patent number 12,125,623
- Issue date Oct 22, 2024
- Imec VZW
- Florin Ciubotaru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin torque oscillator maser
- Patent number 12,126,303
- Issue date Oct 22, 2024
- Massachusetts Institute of Technology
- Luqiao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory and method for fabricating th...
- Patent number 12,127,413
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Kun-Ju Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device and method of operating same using f...
- Patent number 12,106,790
- Issue date Oct 1, 2024
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction element with a composite capping layer...
- Patent number 12,108,684
- Issue date Oct 1, 2024
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Grant
Nano spintronic device using spin current of ferromagnetic material...
- Patent number 12,106,879
- Issue date Oct 1, 2024
- Korea Institute of Science and Technology
- Hyun Cheol Koo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compositions of chiral molecules and perovskite nanocrystals and me...
- Patent number 12,104,106
- Issue date Oct 1, 2024
- Alliance for Sustainable Energy, LLC
- Joseph Matthew Luther
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,102,014
- Issue date Sep 24, 2024
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction switching with parallel spin-momentum l...
- Patent number 12,094,508
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- See-Hun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element
- Patent number 12,096,699
- Issue date Sep 17, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SPINTRONICS DEVICE, MAGNETIC MEMORY, ELECTRONIC APPARATUS, AND MANU...
- Publication number 20250040445
- Publication date Jan 30, 2025
- Keio University
- Yukio NOZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250040149
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Ya-Huei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
- Publication number 20250040447
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20250040444
- Publication date Jan 30, 2025
- International Business Machines Corporation
- MATTHIAS GEORG GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250029644
- Publication date Jan 23, 2025
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Unghwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
HALF METALLIC HEUSLER MULTILAYERS WITH PERPENDICULAR MAGNETIC ANISO...
- Publication number 20250024756
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Mahesh Samant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE USING MAGNON SPIN VALVE INCLUDING TOPOLOGICA...
- Publication number 20250017116
- Publication date Jan 9, 2025
- POSTECH Research and Business Development Foundation
- Hyungyu JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250008743
- Publication date Jan 2, 2025
- UNITED MICROELECTRONICS CORP.
- Kun-Ju Li
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Publication number 20250006237
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE
- Publication number 20250008843
- Publication date Jan 2, 2025
- SK HYNIX INC.
- Soo Man SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240431214
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE ELEMENT INCLUDING A SKYRMION LAYER AND A VORTEX L...
- Publication number 20240420878
- Publication date Dec 19, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Samridh JAISWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240412909
- Publication date Dec 12, 2024
- University of Rochester
- Eby G. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE ELEMENT AND STORAGE DEVICE
- Publication number 20240415025
- Publication date Dec 12, 2024
- Sony Semiconductor Solutions Corporation
- YUITO KAGEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240415026
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC SWITCH COMPRISING THE MAGNETO...
- Publication number 20240395448
- Publication date Nov 28, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Nikita Strelkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT
- Publication number 20240395283
- Publication date Nov 28, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Rie MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...
- Publication number 20240387089
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jeongchun RYU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389472
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Lin Huang
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240387090
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20240381779
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...
- Publication number 20240371424
- Publication date Nov 7, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Stuart S.P. PARKIN
- G11 - INFORMATION STORAGE
Information Patent Application
DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME
- Publication number 20240371559
- Publication date Nov 7, 2024
- TOHOKU UNIVERSITY
- Yutaro TAKEUCHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
- Publication number 20240365684
- Publication date Oct 31, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION
- Publication number 20240357941
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEXTURED COBALT ALUMINUM/MAGNESIUM-ALUMINUM-OXIDE PEDESTAL FOR MEMO...
- Publication number 20240357942
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...
- Publication number 20240347089
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20240349620
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN INDUCTOR
- Publication number 20240347252
- Publication date Oct 17, 2024
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPEN...
- Publication number 20240349619
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS

Spin-exchange-coupled multilayers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

System and method for skyrmion based logic device

Magnetoresistive memory device and method of operating same using f...

Iridium-manganese-based tunnel magnetoresistance sensing element wi...

Protective passivation layer for magnetic tunnel junctions

Magnetoresistive devices comprising a synthetic antiferromagnetic c...

Structure and method for MRAM devices having spacer element

Spin memory encryption

Highly textured 001 BiSb and materials for making same

Warped magnetic tunnel junctions and bit-patterned media

Storage element and storage apparatus

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Reconfigurable PUF device based on fully electric field-controlled...

Spin-orbit torque (SOT)-based magnetic tunnel junction and method o...

Memory device and manufacturing method thereof

Layout pattern for magnetoresistive random access memory

Magnetoresistive random access memory having a blocking layer on me...

Magnetoresistive element with free-layer and method of manufacturin...

Magnetic memory element including perpendicular enhancement layers...

Magnetic storage device

Logic gates based on phase shifters

Spin torque oscillator maser

Magnetoresistive random access memory and method for fabricating th...

Magnetoresistive memory device and method of operating same using f...

Magnetic tunneling junction element with a composite capping layer...

Nano spintronic device using spin current of ferromagnetic material...

Compositions of chiral molecules and perovskite nanocrystals and me...

Semiconductor device and method for fabricating the same

Magnetic tunneling junction switching with parallel spin-momentum l...

Magnetoresistive effect element

Patents Applicationslast 30 patents

SPINTRONICS DEVICE, MAGNETIC MEMORY, ELECTRONIC APPARATUS, AND MANU...

LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY

MAGNETIC MEMORY DEVICE

HALF METALLIC HEUSLER MULTILAYERS WITH PERPENDICULAR MAGNETIC ANISO...

MAGNETIC MEMORY DEVICE USING MAGNON SPIN VALVE INCLUDING TOPOLOGICA...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETORESISTANCE ELEMENT INCLUDING A SKYRMION LAYER AND A VORTEX L...

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

STORAGE ELEMENT AND STORAGE DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC SWITCH COMPRISING THE MAGNETO...

MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT

SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLU...

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...

DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...

MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION

TEXTURED COBALT ALUMINUM/MAGNESIUM-ALUMINUM-OXIDE PEDESTAL FOR MEMO...

FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEU...

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

SPIN INDUCTOR

NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPEN...