Spin-exchange-coupled multilayers

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H01F10/32

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/32Spin-exchange-coupled multilayers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic device, magnetic head, and magnetic recording device
- Patent number 12,367,898
- Issue date Jul 22, 2025
- Kabushiki Kaisha Toshiba
- Naoyuki Narita
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,369,496
- Issue date Jul 22, 2025
- United Microelectronics Corp.
- Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive serial resistance reduction for magnetoresistive random-ac...
- Patent number 12,364,164
- Issue date Jul 15, 2025
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,364,168
- Issue date Jul 15, 2025
- TDK Corporation
- Shinto Ichikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 12,356,865
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Photonic spin register, information writing method, and information...
- Patent number 12,347,506
- Issue date Jul 1, 2025
- The University of Tokyo
- Satoru Nakatsuji
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for generating magnetic vortex spin structures
- Patent number 12,345,781
- Issue date Jul 1, 2025
- Infineon Technologies AG
- Mathias Klaeui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance element including a skyrmion layer and a vortex l...
- Patent number 12,347,595
- Issue date Jul 1, 2025
- ALLEGRO MICROSYSTEMS, LLC
- Samridh Jaiswal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM stacks, MRAM devices and methods of forming the same
- Patent number 12,334,238
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Receiving device, transceiver device, communication system, portabl...
- Patent number 12,332,114
- Issue date Jun 17, 2025
- TDK Corporation
- Hideaki Fukuzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunneling junction with synthetic free layer for SOT-MRAM
- Patent number 12,329,041
- Issue date Jun 10, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling out-of-plane anisotropy in an MR sensor with free layer...
- Patent number 12,320,870
- Issue date Jun 3, 2025
- ALLEGRO MICROSYSTEMS, LLC
- Samridh Jaiswal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle shields two-dimensional magnetic recording read heads
- Patent number 12,322,420
- Issue date Jun 3, 2025
- Western Digital Technologies, Inc.
- Ming Mao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory using spin-orbit torque
- Patent number 12,317,753
- Issue date May 27, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked spin-orbit-torque magnetoresistive random-access memory
- Patent number 12,317,509
- Issue date May 27, 2025
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction device and memory device including the...
- Patent number 12,310,250
- Issue date May 20, 2025
- Samsung Electronics Co., Ltd.
- Kwangseok Kim
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic device
- Patent number 12,310,254
- Issue date May 20, 2025
- Samsung Electronics Co., Ltd.
- Sanghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 12,302,587
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Cryptographic MRAM and methods thereof
- Patent number 12,299,182
- Issue date May 13, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
System and method for nanomagnet based adder circuit
- Patent number 12,300,411
- Issue date May 13, 2025
- Ceremorphic, Inc.
- Sanghamitra Debroy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Receiving device, transceiver device, communication system, portabl...
- Patent number 12,298,178
- Issue date May 13, 2025
- TDK Corporation
- Hideaki Fukuzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device
- Patent number 12,295,268
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Byongguk Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic recording element, and h...
- Patent number 12,288,576
- Issue date Apr 29, 2025
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive sensor element for sensing a two-dimensional magne...
- Patent number 12,287,381
- Issue date Apr 29, 2025
- ALLEGRO MICROSYSTEMS, LLC
- Clarisse Ducruet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-transfer torque magnetoresistive memory device with a free lay...
- Patent number 12,283,296
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Tiffany Santos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,279,536
- Issue date Apr 15, 2025
- United Microelectronics Corp.
- Jin-Yan Chiou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,278,033
- Issue date Apr 15, 2025
- TDK Corporation
- Shinto Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic element using spin-orbit torque and magnetic tunnel junction...
- Patent number 12,274,178
- Issue date Apr 8, 2025
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Photodetection element and receiver
- Patent number 12,272,476
- Issue date Apr 8, 2025
- TDK Corporation
- Tomohito Mizuno
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with top electrode via
- Patent number 12,274,183
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Che Ku
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SUBWAVELENGTH ANTENNAS, DRIVERS, AND SYSTEMS
- Publication number 20250239390
- Publication date Jul 24, 2025
- Virginia Commonwealth University
- Supriyo BANDYOPADHYAY
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250240975
- Publication date Jul 24, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Zih-Song Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...
- Publication number 20250232789
- Publication date Jul 17, 2025
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESTISTIVE SENSOR SENSITIVE TO AN OUT-OF-PLANE MAGNETIC FIELD
- Publication number 20250231259
- Publication date Jul 17, 2025
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Alvaro PALOMINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen Doped Oxides for Lower Bandgap
- Publication number 20250226140
- Publication date Jul 10, 2025
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20250210060
- Publication date Jun 26, 2025
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
Spin Orbit Torque (SOT) Device Having a Topological Insulator Layer...
- Publication number 20250210241
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250210121
- Publication date Jun 26, 2025
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Stuart Papworth Parkin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250212696
- Publication date Jun 26, 2025
- UNITED MICROELECTRONICS CORP.
- Jin-Yan Chiou
- G11 - INFORMATION STORAGE
Information Patent Application
NEUROMORPHIC DEVICES OF HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MA...
- Publication number 20250204269
- Publication date Jun 19, 2025
- International Business Machines Corporation
- See-Hun Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC MEMORY DEVICE INCLUDING TUNNELING MAGNETORESISTANCE LAYER...
- Publication number 20250203877
- Publication date Jun 19, 2025
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECEIVING DEVICE, TRANSCEIVER DEVICE, COMMUNICATION SYSTEM, PORTABL...
- Publication number 20250198834
- Publication date Jun 19, 2025
- TDK Corporation
- Hideaki FUKUZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20250176438
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS
- Publication number 20250169372
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
TMR SENSOR HAVING TUNED VORTEX RESPONSE
- Publication number 20250164585
- Publication date May 22, 2025
- ALLEGRO MICROSYSTEMS, LLC
- Paolo Campiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-BIT GENERATOR AND METHODS FOR TUNING A P-BIT GENERATOR HAVING DEC...
- Publication number 20250167774
- Publication date May 22, 2025
- KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS
- Feras Mohamad Ameer AL-DIRINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MEMORY DEVICE INCLUDING MAGNET...
- Publication number 20250169371
- Publication date May 22, 2025
- Samsung Electronics Co., Ltd.
- KI WOONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferromagnetic-Polymer Composite Material and Structures Comprising...
- Publication number 20250157707
- Publication date May 15, 2025
- Ferric Inc.
- Noah Sturcken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250160217
- Publication date May 15, 2025
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT
- Publication number 20250151630
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Ku SHEN
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED FILM, MAGNETORESISTIVE EFFECT ELEMENT, SEMICONDUCTOR MEMORY...
- Publication number 20250143192
- Publication date May 1, 2025
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20250127061
- Publication date Apr 17, 2025
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20250120322
- Publication date Apr 10, 2025
- Sony Semiconductor Solutions Corporation
- YUTAKA HIGO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN MEMORY ENCRYPTION
- Publication number 20250098546
- Publication date Mar 20, 2025
- Colorado State University Research Foundation
- Kristen Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE
- Publication number 20250087234
- Publication date Mar 13, 2025
- Kabushiki Kaisha Toshiba
- Naoyuki NARITA
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250081857
- Publication date Mar 6, 2025
- National Tsing-Hua University
- Chih-Huang Lai
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
DEVICE AND METHOD FOR DETECTING A MAGNETIC FIELD USING THE SPIN ORB...
- Publication number 20250076419
- Publication date Mar 6, 2025
- INFINEON TECHNOLOGIES AG
- Dieter SUESS
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layer a...
- Publication number 20250063952
- Publication date Feb 20, 2025
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide...
- Publication number 20250062060
- Publication date Feb 20, 2025
- TSINGHUA UNIVERSITY
- Tianxiang NAN
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE STACK AND METHODS THEREFOR
- Publication number 20250063953
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Renu WHIG
- H01 - BASIC ELECTRIC ELEMENTS

Spin-exchange-coupled multilayers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic device, magnetic head, and magnetic recording device

Semiconductor device and method for fabricating the same

Reactive serial resistance reduction for magnetoresistive random-ac...

Magnetoresistance effect element

Multilayer structure for reducing film roughness in magnetic devices

Photonic spin register, information writing method, and information...

Apparatus and method for generating magnetic vortex spin structures

Magnetoresistance element including a skyrmion layer and a vortex l...

MRAM stacks, MRAM devices and methods of forming the same

Receiving device, transceiver device, communication system, portabl...

Magnetic tunneling junction with synthetic free layer for SOT-MRAM

Controlling out-of-plane anisotropy in an MR sensor with free layer...

Middle shields two-dimensional magnetic recording read heads

Magnetic memory using spin-orbit torque

Stacked spin-orbit-torque magnetoresistive random-access memory

Magnetic tunneling junction device and memory device including the...

Magnetic device

Memory device and semiconductor die, and method of fabricating memo...

Cryptographic MRAM and methods thereof

System and method for nanomagnet based adder circuit

Receiving device, transceiver device, communication system, portabl...

Magnetic memory device

Magnetoresistance effect element, magnetic recording element, and h...

Magnetoresistive sensor element for sensing a two-dimensional magne...

Spin-transfer torque magnetoresistive memory device with a free lay...

Semiconductor device and method for fabricating the same

Magnetoresistance effect element

Logic element using spin-orbit torque and magnetic tunnel junction...

Photodetection element and receiver

Memory cell with top electrode via

Patents Applicationslast 30 patents

SUBWAVELENGTH ANTENNAS, DRIVERS, AND SYSTEMS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...

MAGNETORESTISTIVE SENSOR SENSITIVE TO AN OUT-OF-PLANE MAGNETIC FIELD

Nitrogen Doped Oxides for Lower Bandgap

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

Spin Orbit Torque (SOT) Device Having a Topological Insulator Layer...

MAGNETIC MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

NEUROMORPHIC DEVICES OF HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MA...

MAGNETIC MEMORY DEVICE INCLUDING TUNNELING MAGNETORESISTANCE LAYER...

RECEIVING DEVICE, TRANSCEIVER DEVICE, COMMUNICATION SYSTEM, PORTABL...

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS

TMR SENSOR HAVING TUNED VORTEX RESPONSE

P-BIT GENERATOR AND METHODS FOR TUNING A P-BIT GENERATOR HAVING DEC...

MAGNETIC TUNNEL JUNCTION ELEMENT AND MEMORY DEVICE INCLUDING MAGNET...

Ferromagnetic-Polymer Composite Material and Structures Comprising...

MAGNETORESISTIVE RANDOM ACCESS MEMORY

STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT

STACKED FILM, MAGNETORESISTIVE EFFECT ELEMENT, SEMICONDUCTOR MEMORY...

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

SPIN MEMORY ENCRYPTION

MAGNETIC DEVICE, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE

SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY

DEVICE AND METHOD FOR DETECTING A MAGNETIC FIELD USING THE SPIN ORB...

Magnetic Memory Element Including Perpendicular Enhancement Layer a...

Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide...

MAGNETORESISTIVE STACK AND METHODS THEREFOR