Patent Application
20190273203
The present disclosure relates to a magnetoresistive effect element.
Magnetoresistive effect elements have been expected to be used in magnetic devices, such as magnetic sensors. The magnetoresistive effect element described in Non Patent Literature 1 mentioned below includes a first half-metal ferromagnet layer, a second half-metal ferromagnet layer, and a nonmagnetic metal layer (nonmagnetic spacer layer) sandwiched between the first half-metal ferromagnet layer and the second half-metal ferromagnet layer. These three layers constitute a magnetoresistance layer.
Non Patent Literature 1: T. Iwase et. al., “Large Interface Spin-Asymmetry and Magnetoresistance in Fully Epitaxial Co2MnSi/Ag/Co2MnSi Current-Perpendicular-to-Plane Magnetoresistive Devices”, Applied Physics Express, Vol. 2, No. 6, 063003 (2009)
In the magnetoresistive effect element described in Non Patent Literature 1, at least one of the first half-metal ferromagnet layer and the second half-metal ferromagnet layer is composed of a Heusler alloy (CoMnSi), and the nonmagnetic spacer layer is composed of Ag. The Co, Mn and Si contained in the Heusler alloy have a stoichiometric composition (Co:Mn:Si=50.4:25.0:24.6 (=2:0.99:0.98)). Since heat treatment (annealing treatment) for ordering the crystals of the Heusler alloy is performed at the time of manufacturing the magnetoresistive effect element, Mn of the Heusler alloy sometimes diffuses into the nonmagnetic spacer layer. If Mn diffuses into the nonmagnetic spacer layer, the problem arises that the magnetoresistive effect provided by the magnetoresistive effect element is decreased. It is desired that diffusion of Mn contained in the Heusler alloy into the nonmagnetic spacer layer be suppressed.
The present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide a magnetoresistive effect element in which the ferromagnetic layer of a magnetoresistance layer contains a Heusler alloy containing Mn and which provides large magnetoresistive effect.
A magnetoresistive effect element according to one aspect of the present disclosure comprises a first ferromagnetic layer serving as a magnetization free layer; a second ferromagnetic layer serving as a magnetization fixed layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer contains a Heusler alloy represented by Formula (1).
X2MnαZβ (1)
In Formula (1), X represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, and Z represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and ⅔<α+β<2 is satisfied.
In the Heusler alloy X2MnαZβ in this magnetoresistive effect element, α+β<2 is satisfied and the total ratio of Mn and Z in X2MnαZβ is smaller than ½, so that the Heusler alloy X2MnαZβ hardly contains excess Mn. Accordingly, Mn easily enters the Mn site correctly while excess Mn is hardly contained, so that X easily enters the Mn site to form a XMn antisite, thereby suppressing the diffusion of Mn into the nonmagnetic spacer layer. In addition, in the Heusler alloy X2MnαZβ, ⅔<α+β is satisfied and the total ratio of Mn and Z in the Heusler alloy X2MnαZβ is greater than ¼. Accordingly, the composition of the Heusler alloy X2MnαZβ does not largely deviate from the stoichiometric composition, so that the spin polarizability easily increases. The resulting magnetoresistive effect element provides large magnetoresistive effect.
In the magnetoresistive effect element according to one aspect of the present disclosure, β<(2+α)/3 may further be satisfied in the Formula (1).
In this magnetoresistive effect element, the ratio of Z in the Heusler alloy X2MnαZβ is less than ¼, so that Mn easily enters the Z site to form a MnZ antisite. Movement of Mn more easily stays within the crystalline structure of the Heusler alloy X2MnαZβ layer, thereby further suppressing diffusion of Mn into areas other than the Heusler alloy layer.
In the magnetoresistive effect element according to one aspect of the present disclosure, β>α may further be satisfied in the Formula (1).
In this magnetoresistive effect element, β>α is satisfied and Mn is less than Z, so that movement of Mn into the nonmagnetic spacer layer is further suppressed.
In the magnetoresistive effect element according to one aspect of the present disclosure, Z may be Si in the Formula (1).
In this magnetoresistive effect element, when the Heusler alloy contains Si, the Curie temperature is high, so that large magnetoresistive effect is produced even at room temperature.
In the magnetoresistive effect element according to one aspect of the present disclosure, at least one of a third ferromagnetic layer serving as a magnetization free layer and a fourth ferromagnetic layer serving as a magnetization fixed layer may further be comprised, the third ferromagnetic layer and the fourth ferromagnetic layer may contain the Heusler alloy represented by Formula (2), the first ferromagnetic layer may be provided between the third ferromagnetic layer and the nonmagnetic spacer layer, and the second ferromagnetic layer may be provided between the fourth ferromagnetic layer and the nonmagnetic spacer layer.
D2MnδEθ (2)
In Formula (2), D represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, and E represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and 2<δ+θ<2.6 is satisfied.
In this magnetoresistive effect element, in the Heusler alloy D2MnδEθ, when 2<δ+θ<2.6, the effect of the formation of antisites, such as a DMn antisite and a DE antisite, to the spin polarizability decreases, allowing the third ferromagnetic layer and the fourth ferromagnetic layer to easily maintain half metal characteristics. Consequently, the third ferromagnetic layer serves as a magnetization free layer together with the first ferromagnetic layer, and the spin polarizability of the magnetization free layer increases. Further, the fourth ferromagnetic layer serves as a magnetization fixed layer together with the second ferromagnetic layer, so that the spin polarizability of the magnetization fixed layer increases. On the other hand, in the Heusler alloy D2MnδEθ, 2<δ+θ<2.6 is satisfied, so that the third ferromagnetic layer and the fourth ferromagnetic layer contain excess Mn. In this magnetoresistive effect element, the first ferromagnetic layer provided between the third ferromagnetic layer and the nonmagnetic spacer layer can suppress movement of Mn from the third ferromagnetic layer to the nonmagnetic spacer layer. Further, the second ferromagnetic layer provided between the fourth ferromagnetic layer and the nonmagnetic spacer layer can suppress movement of Mn from the fourth ferromagnetic layer to the nonmagnetic spacer layer.
A magnetoresistive effect element according to another aspect of the present disclosure comprises a first ferromagnetic layer serving as a magnetization free layer; a second ferromagnetic layer serving as a magnetization fixed layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer contains a Heusler alloy represented by Formula (3).
X2(MnεGη)αZβ (3)
In Formula (3), X represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, G represents at least one of the elements of Fe and Cr, X does not contain Fe when G contains Fe, Z represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and ⅔<α+β<2, 0<ε<1, and 0<η<1 are satisfied.
In the Heusler alloy X2(MnεGη)αZβ in this magnetoresistive effect element, α+β<2 and 0<ε<1 are satisfied and the total ratio of Mn and Z in X2(MnεGη)αZβ is smaller than ½, so that the Heusler alloy X2(MnεGη)αZβ hardly contains excess Mn. Accordingly, Mn easily enters the Mn site correctly while excess Mn is hardly contained, so that X easily enters the Mn site to form a XMn antisite, thereby suppressing the diffusion of Mn into the nonmagnetic spacer layer. In addition, in the Heusler alloy X2(MnEGη)αZβ, ⅔<α+β is satisfied and the total ratio of Mn, G, and Z in the Heusler alloy X2(MnεGη)αZβ can be greater than ¼. Accordingly, the composition of the Heusler alloy X2(MnεGη)αZβ does not largely deviate from the stoichiometric composition, so that the spin polarizability easily increases. The resulting magnetoresistive effect element provides large magnetoresistive effect.
In the magnetoresistive effect element according to the other aspect of the present disclosure, β<(2+α)/3 may further be satisfied in the Formula (3).
In this magnetoresistive effect element, the ratio of Z in the Heusler alloy X2(MnεGη)αZβ is less than ¼, so that Mn satisfy enters the Z site to form a MnZ antisit. Movement of Mn more easily stays within the crystalline structure of the Heusler alloy X2(MnεGη)αZβ layer, thereby further suppressing diffusion of Mn into areas other than the Heusler alloy layer.
In the magnetoresistive effect element according to the other aspect of the present disclosure, β>α may further be satisfied in the Formula (3).
In this magnetoresistive effect element, β>α and 0<ε<1 are satisfied and Mn is less than Z, so that movement of Mn into the nonmagnetic spacer layer is further suppressed.
In the magnetoresistive effect element according to the other aspect of the present disclosure, Z may be Si in the Formula (3).
In this magnetoresistive effect element, when the Heusler alloy contains Si, the Curie temperature is high, so that large magnetoresistive effect is produced even at room temperature.
In the magnetoresistive effect element according to the other aspect of the present disclosure, at least one of a third ferromagnetic layer serving as a magnetization free layer and a fourth ferromagnetic layer serving as a magnetization fixed layer may further be comprised, the third ferromagnetic layer and the fourth ferromagnetic layer may contain the Heusler alloy represented by Formula (4), the first ferromagnetic layer may be provided between the third ferromagnetic layer and the nonmagnetic spacer layer, and the second ferromagnetic layer may be provided between the fourth ferromagnetic layer and the nonmagnetic spacer layer.
D2(MnεGη)δEθ (4)
In Formula (4), D represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, G represents at least one of the elements of Fe and Cr, D does not contain Fe when G contains Fe, E represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and 2<δ+θ<2.6, 0<ε<1, and 0<η<1 are satisfied.
In this magnetoresistive effect element, in the Heusler alloy D2(MnεGη)δEθ, when 2<δ+θ<2.6, the effect of the formation of antisites, such as a DMn antisite and a DE antisite, to the spin polarizability decreases, allowing the third ferromagnetic layer and the fourth ferromagnetic layer to easily maintain half metal characteristics. Consequently, the third ferromagnetic layer serves as a magnetization free layer together with the first ferromagnetic layer, and the spin polarizability of the magnetization free layer increases. Further, the fourth ferromagnetic layer serves as a magnetization fixed layer together with the second ferromagnetic layer, so that the spin polarizability of the magnetization fixed layer increases. On the other hand, in the Heusler alloy D2(MnεGη)αEθ, 2<δ+θ<2.6 is satisfied, so that the third ferromagnetic layer and the fourth ferromagnetic layer can contain excess Mn. In this magnetoresistive effect element, the first ferromagnetic layer provided between the third ferromagnetic layer and the nonmagnetic spacer layer can suppress movement of Mn from the third ferromagnetic layer to the nonmagnetic spacer layer. Further, the second ferromagnetic layer provided between the fourth ferromagnetic layer and the nonmagnetic spacer layer can suppress movement of Mn from the fourth ferromagnetic layer to the nonmagnetic spacer layer.
In the magnetoresistive effect element according to the present disclosure, the nonmagnetic spacer layer may contain Ag or Ag-containing metal represented by Formula (A).
AgγL1-γ (A)
In Formula (A), L is at least one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<γ≤1 is satisfied.
In this magnetoresistive effect element, the nonmagnetic spacer layer contains Ag or Ag-containing metal represented by Formula (A), and the lattice constant of the Ag or Ag-containing metal can be adjusted by changing the value of L and/or γ of the element. Adjustment of this lattice constant can reduce lattice mismatch between the nonmagnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer. Reducing lattice mismatch improves the crystallinity of the first ferromagnetic layer and/or the second ferromagnetic layer and the nonmagnetic spacer layer, thereby producing larger magnetoresistive effect.
The present disclosure provides a magnetoresistive effect element in which the ferromagnetic layer of a magnetoresistance layer contains a Heusler alloy containing Mn and which provides large magnetoresistive effect.
An embodiment of the present disclosure will now be described with reference to the accompanying drawings. Note that, in the drawings, the same component is denoted by the same reference numeral if possible. Further, ratios between the sizes of or sizes in the components in the drawings are arbitrary for the viewability of the drawings.
Examples of the material for the substrate 10 include a single-crystal metal oxide, single-crystal silicon, single-crystal silicon with a thermal oxide film, a single-crystal sapphire, ceramic, quartz, and glass. The material contained in substrate 10 may be any material that has appropriate mechanical strength and is suitable for thermal treatment and micromachining. Examples of single-crystal metal oxide include single-crystal MgO. With a substrate containing single-crystal MgO, an epitaxial growth film is easily formed by sputtering, for example. This epitaxial growth film exhibits large magnetoresistive characteristics.
The base layer 20 is provided to improve the crystallinity of the magnetoresistance layer 30 and can also serve as an electrode for measuring magnetoresistive characteristics. The base layer 20 may include at least one metallic element selected from the group consisting of Ag, Au, Cu, Cr, V, Al, W, and Pt, an alloy of these metallic elements, or a stack body of materials composed of two or more of these metallic elements. Examples of alloy of metallic elements include cubic AgZn alloys, AgMg alloys, and NiAl alloys. A crystal orientation layer for controlling the crystal orientation of the upper layer may be provided between the base layer 20 and the substrate 10 as needed. The crystal orientation layer contains, for example, at least one of MgO, TiN, and a NiTa alloy.
The magnetoresistance layer 30 includes a first ferromagnetic layer 31 serving as a magnetization free layer, a second ferromagnetic layer 32 serving as a magnetization fixed layer, and a nonmagnetic spacer layer 36 provided between the first ferromagnetic layer 31 and the second ferromagnetic layer 32. The second ferromagnetic layer 32 is provided, for example, on the nonmagnetic spacer layer 36.
The first ferromagnetic layer 31 serving as a magnetization free layer is composed of a soft magnetic material and its magnetization direction is substantially not fixed. Therefore, when an external magnetic field of a measurement object is applied, the magnetization direction easily changes to that direction. The magnetization direction of the second ferromagnetic layer 32 serving as a magnetization fixed layer is harder to change with respect to the external magnetic field than the magnetization direction of the first ferromagnetic layer 31. It is preferable that the magnetization direction of the second ferromagnetic layer 32 be substantially fixed with respect to the external magnetic field of a measurement object and do not substantially change with respect to the external magnetic field of the measurement object. When an external magnetic field is applied to the magnetoresistance layer 30 and the relative magnetization directions of the first ferromagnetic layer 31 and the second ferromagnetic layer 32 change, the resistance of the magnetoresistance layer 30 changes and magnetoresistive effect is produced.
At least one of the first ferromagnetic layer 31 and the second ferromagnetic layer 32 contains the Heusler alloy represented by Formula (1).
X2MnαZβ (1)
In Formula (1), X represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, and Z represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and ⅔<α+β<2 is satisfied.
In this embodiment, in Formula (1), X can be Co. In a Heusler alloy, in which X is Co, the Curie temperature is sufficiently higher than room temperature, so that large magnetoresistive effect is produced even at room temperature. In addition, in Formula (1), Z can be Si. In a Heusler alloy containing Si, the Curie temperature is high, so that large magnetoresistive effect is produced even at room temperature.
The Heusler alloy Co2MnαSiβ can include a boundary line B1 representing α+β=2, a boundary line B2 representing β=(2+α)/3, and a boundary line B3 representing α+β=⅔. The boundary line B1 corresponds to a composition in which the total ratio of Mn and Si in Co2MnαSiβ is ½. The boundary line B2 corresponds to such a composition that the ratio of Si in Co2MnαSiβ is ¼. The boundary line B3 corresponds to such a composition that the total ratio of Mn and Si in Co2MnαSiβ is ¼. These boundary lines B1 to B3 divide the Heusler alloy Co2MnαSiβ into regions I to V.
The regions I and II are regions defined by the boundary line B1 and both satisfying 2<α+β. The region I is a region that can be distinguished from the region II by the boundary line B2. The region I is a region satisfying 2<α+β and β>(2+α)/3. The region II is a region satisfying 2<α+β and β<(2+α)/3. In both of the region I and the region II, the total ratio of Mn and Si in Co2MnαSiβ is larger than ½, and the Heusler alloy Co2MnαSiβ easily contains excess Mn. Since excess Mn is contained, Mn enters the Mn site and easily moves to sites other than the Mn site. For example, formation of MnSi antisite where Mn enters the Si site and/or formation of MnCo antisite where Mn enters the Co site are performed. Further, excess Mn easily diffuses into the nonmagnetic spacer layer 36, for example.
The region III is a region defined by the boundary line B3 and satisfying α+β<⅔. In the region III, the area represented by α+β<⅔, the total ratio of Mn and Si in the Heusler alloy Co2MnαSiβ is less than ¼. Accordingly, in the region III, the composition of the Heusler alloy Co2MnαSiβ largely deviates from the stoichiometric composition, making it difficult to increase the spin polarizability.
The regions IV and V are regions defined by the boundary lines B1 and B3 and both satisfying ⅔<α+β<2. The region IV is a region that is distinguished from the region V by the boundary line B2. The region IV satisfies ⅔<α+β<2 and β>(2+α)/3. The region V satisfies ⅔<α+β<2 and β<(2+α)/3. In both of the region IV and the region V, α+β<2 holds and the total ratio of Mn and Si in Co2MnαSiβ is smaller than ½, and thus the Heusler alloy Co2MnαSiβ hardly contains excess Mn. In the regions IV and V, Mn easily enters the Mn site correctly while excess Mn is hardly contained, so that Co easily enters the Mn site to form a CoMn antisite, thereby suppressing the diffusion of Mn into the nonmagnetic spacer layer 36. In both of the regions IV and V, the total ratio of Mn and Si in the Heusler alloy Co2MnαSiβ is greater than ¼. Accordingly, the composition of the Heusler alloy Co2MnαSiβ does not largely deviate from the stoichiometric composition, so that the spin polarizability easily increases. The resulting magnetoresistive effect element 1 provides large magnetoresistive effect.
In the region IV, the ratio of Si in Co2MnαSiβ is different from that in the region V. In the region IV, β>(2+α)/3 is satisfied and the ratio of Si in Co2MnαSiβ is greater than ¼. In the region V, β<(2+α)/3 is satisfied and the ratio of Si in Co2MnαSiβ is less than ¼.
In the region IV, the ratio of Si in Co2MnαSiβ is greater than ¼, so that Si easily enters Mn to form a SiMn antisite. In the region V, the ratio of Si in Co2MnαSiβ is less than ¼, so that Mn easily enters Si site to form a MnSi antisite. In the region V, movement of Mn is more easily limited within the crystalline structure of the Heusler alloy Co2MnαSiβ layer, thereby further suppressing diffusion of Mn into areas other than the Heusler alloy layer.
In this embodiment, in the first ferromagnetic layer 31 and the second ferromagnetic layer 32, the crystalline structure of the Heusler alloy can be a structure A2, structure B2, or structure L21. A Heusler alloy with the structure B2, which has higher spin polarizability than the Heusler alloy with the structure A2, is preferable, and a Heusler alloy with the structure L21, which has higher spin polarizability than the Heusler alloy with the structure B2, is more preferable.
For, among Heusler alloys, Heusler alloys with the structures B2 and L21, which have a particularly ordered crystalline structure, heat treatment (annealing treatment) is performed for ordering the crystals of the Heusler alloy during fabrication of the magnetoresistive effect element 1. Mn in the Heusler alloy easily diffuses into the nonmagnetic spacer layer 36 during heat treatment, while in this embodiment, the Heusler alloy X2MnαZβ represented by Formula (1) is contained. Accordingly, diffusion of Mn in the Heusler alloy into the nonmagnetic spacer layer 36 is suppressed, and thus the magnetoresistive effect element 1 after heat treatment exhibits large magnetoresistive effect.
Referring back to
AgγL1-γ (A)
In Formula (A), X is at least one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<γ≤1 is satisfied.
The nonmagnetic spacer layer 36 contains Ag or Ag-containing metal represented by Formula (A), and the lattice constant of Ag or Ag-containing metal can be adjusted by changing the value of L and/or γ of the element. Adjustment of this lattice constant can reduce lattice mismatch between the nonmagnetic spacer layer 36 and the first ferromagnetic layer 31 and/or the second ferromagnetic layer 32. Reducing lattice mismatch improves the crystallinity of the first ferromagnetic layer 31 and/or the second ferromagnetic layer 32 and the nonmagnetic spacer layer 36, thereby producing larger magnetoresistive effect.
The Ag or Ag-containing metal in the nonmagnetic spacer layer 36 tends to have the face-centered cubic lattice structure (fcc structure). For this reason, the nonmagnetic spacer layer 36 and the first ferromagnetic layer 31 and the second ferromagnetic layer 32 can be stacked on each other with high crystal quality. This effect is particularly remarkable when the first ferromagnetic layer 31 and the second ferromagnetic layer 32 also have the fcc structure.
The nonmagnetic spacer layer 36 may contain a metal, such as Cr, Au, V, W, NiAl, AgZn, AgMg, or a nonmagnetic Heusler alloy, instead of Ag or Ag-containing metal represented by Formula (A).
In the magnetoresistance layer 30, the thickness of the nonmagnetic spacer layer 36 is, for example, greater than or equal to 1 nm and less than or equal to 10 nm. The thickness of the first ferromagnetic layer 31 is, for example, greater than or equal to 1 nm and less than or equal to 20 nm. The thickness of the second ferromagnetic layer 32 is, for example, greater than or equal to 1 nm and less than or equal to 20 nm.
The magnetoresistance layer 30 includes an antiferromagnetic layer 35 as needed, and the antiferromagnetic layer 35 is provided, for example, on the surface of the second ferromagnetic layer 32 opposite to the nonmagnetic spacer layer 36 side. The antiferromagneticic layer 35 is used to substantially fix the direction of magnetization of the second ferromagnetic layer 32 by exchange-coupling with the second ferromagnetic layer 32 to give unidirectional anisotropy to the second ferromagnetic layer 32. Examples of material for the antiferromagnetic layer 35 include a FeMn alloy, a PtMn alloy, a PtCrMn alloy, a NiMn alloy, an IrMn alloy, NiO, and Fe2O3. The thickness of the antiferromagnetic layer 35 is, for example, 5 nm to 15 nm.
Regarding the first ferromagnetic layer 31 and the second ferromagnetic layer 32, the antiferromagneticic layer 35 is not necessarily provided if the second ferromagnetic layer 32 has a coercive force greater than that of the first ferromagnetic layer 31 and has a level such that the magnetization direction of the second ferromagnetic layer 32 is substantially fixed with respect to the external magnetic field to be measured by a method such as changing the thicknesses of these layers.
In the magnetoresistance layer 30, one of the first ferromagnetic layer 31 and the second ferromagnetic layer 32 is a magnetization free layer, and the other is a magnetization fixed layer: the first ferromagnetic layer 31 may be a magnetization fixed layer, and the second ferromagnetic layer 32 may be a magnetization free layer. In this case, the antiferromagnetic layer 35 is provided on the surface of the first ferromagnetic layer 31 opposite to the nonmagnetic spacer layer 36 side.
The cap layer 40 is provided to protect the magnetoresistance layer 30. The cap layer 40 may contain, for example, one or more metallic elements selected from the group consisting of Ru, Ag, Al, Cu, Au, Cr, Mo, Pt, W, Ta, Pd, and Ir, an alloy of these metallic elements, or a stack body of materials composed of two or more of these metallic elements. An upper electrode for allowing a current to flow in the magnetoresistive effect element 1 along the stacking direction may be provided on the cap layer 40.
The magnetoresistive effect element 1 is fabricated by forming each layer of the base layer 20 to the cap layer 40 on the substrate 10 by a manufacturing method such as sputtering or electron beam evaporation, for example. During formation of each layer, heat treatment may be performed as needed and magnetic field applying treatment for giving unidirectional anisotropy may be performed as needed. During magnetic field applying treatment, heat treatment may be performed concurrently as appropriate. In addition, the magnetoresistive effect element 1 may be fine-patterned into a shape that allows evaluation of magnetoresistive characteristics by lithography using electron beams or the like and dry etching using Ar ions or the like. The magnetoresistive effect element 1 is a magnetoresistive effect element having a current perpendicular to plane (CPP) structure in which a detection current flows along the stacking direction (the direction perpendicular to the film surface of each layer).
The magnetoresistance layer 30p includes a first ferromagnetic layer 31p serving as a magnetization free layer, a second ferromagnetic layer 32p serving as a magnetization fixed layer, and a nonmagnetic spacer layer 36p provided between the first ferromagnetic layer 31p and the second ferromagnetic layer 32p. The second ferromagnetic layer 32p is provided, for example, on the nonmagnetic spacer layer 36p. At least one of the first ferromagnetic layer 31p and the second ferromagnetic layer 32p contains the Heusler alloy represented by Formula (1). The nonmagnetic spacer layer 36p can contain Ag or Ag-containing metal represented by Formula (A).
In this modification, the magnetoresistance layer 30p can further include at least one of a third ferromagnetic layer 33p and a fourth ferromagnetic layer 34p. The third ferromagnetic layer 33p serves as a magnetization free layer together with the first ferromagnetic layer 31p, and the fourth ferromagnetic layer 34p serves as a magnetization fixed layer together with the second ferromagnetic layer 32p. In the magnetoresistive effect element 1p, the first ferromagnetic layer 31p is provided, for example, between the third ferromagnetic layer 33p and the nonmagnetic spacer layer 36p. The second ferromagnetic layer 32p is provided, for example, between the fourth ferromagnetic layer 34p and the nonmagnetic spacer layer 36p.
In the magnetoresistance layer 30p, the third ferromagnetic layer 33p and the fourth ferromagnetic layer 34p can contain the Heusler alloy represented by Formula (2).
D2MnδEθ (2)
In Formula (2), D represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, and E represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn. In addition, in Formula (2), for δ and θ, 2<δ+θ<2.6 is satisfied. In this embodiment, in Formula (2), X can be Co, and Z can be Si.
In the Heusler alloy Co2MnδSiθ represented by Formula (2), when the CoMf antisite where Co enters the Mn site is formed, the spin polarizability decreases. On the other hand, the fact that the effect on spin polarizability is small when Mn enters the Co site to form a MnCo antisite, and when Si enters the Co site to form a SiCo antisite has theoretically been demonstrated.
In the Heusler alloy Co2MnδSiθ, when δ+θ<2, the ratio of Co in Co2MnαSiβ is greater than ½, and a CoMn antisite is formed. Accordingly, when δ+θ<2, the spin polarizability decreases. Meanwhile, when 2<δ+θ, a MnCo antisite where Mn enters the Co site and/or a SiCo antisite where Si enters the Co site are formed, so that the spin polarizability is less affected. In the Heusler alloy Co2MnδSiθ, when 2.6≤δ+θ, the amount of magnetization in the Heusler alloy decreases.
Accordingly, in the Heusler alloy Co2MnδSiθ, when 2<δ+θ<2.6, the effect of the formation of antisites on the spin polarizability decreases, allowing the third ferromagnetic layer 33p and the fourth ferromagnetic layer 34p to easily maintain half metal characteristics. Consequently, the third ferromagnetic layer 33p serves as a magnetization free layer together with the first ferromagnetic layer 31p, so that the spin polarizability of the magnetization free layer increases. Further, the fourth ferromagnetic layer 34p serves as a magnetization fixed layer together with the second ferromagnetic layer 32p, so that the spin polarizability of the magnetization fixed layer increases. The magnetoresistive effect element 1p can provide large magnetoresistive effect.
Regarding the third ferromagnetic layer 33p and the fourth ferromagnetic layer 34p, in the Heusler alloy Co2MnδSiθ, 2<δ+θ<2.6 is satisfied, so that the total ratio of Mn and Si in Co2MnαSiβ is greater than ½. For this reason, the Heusler alloy Co2MnδSiθ in the third ferromagnetic layer 33p and the fourth ferromagnetic layer 34p contain excess Mn. In this modification, the first ferromagnetic layer 31p provided between the third ferromagnetic layer 33p and the nonmagnetic spacer layer 36p can suppress movement of Mn from the third ferromagnetic layer 33p to the nonmagnetic spacer layer 36p. Further, the second ferromagnetic layer 32p provided between the fourth ferromagnetic layer 34p and the nonmagnetic spacer layer 36p can suppress movement of Mn from the fourth ferromagnetic layer 34p to the nonmagnetic spacer layer 36p.
The thickness of the first ferromagnetic layer 31p is, for example, 1 nm to 20 nm. The thickness of the second ferromagnetic layer 32p is, for example, 1 nm to 20 nm. The thickness of the third ferromagnetic layer 33p is, for example, 1 nm to 20 nm. The thickness of the fourth ferromagnetic layer 34p is, for example, 1 nm to 20 nm. The thickness of the nonmagnetic spacer layer 36p is, for example, greater than or equal to 1 nm and less than or equal to 10 nm.
The magnetoresistance layer 30q includes a first ferromagnetic layer 31q serving as a magnetization free layer, a second ferromagnetic layer 32q serving as a magnetization fixed layer, and a nonmagnetic spacer layer 36q provided between the first ferromagnetic layer 31q and the second ferromagnetic layer 32q. The second ferromagnetic layer 32q is provided, for example, on the nonmagnetic spacer layer 36q.
At least one of the first ferromagnetic layer 31q and the second ferromagnetic layer 32q contains the Heusler alloy represented by Formula (3).
X2(MnεGη)αZβ (3)
In Formula (3), X represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, and G represents at least one of the elements of Fe and Cr. Note that when G contains Fe, X does not contain Fe. In other words, X represents at least one element selected from the group consisting of Co, Ni, Ru, and Rh. Z represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and ⅔<α+β<2, 0<ε<1, and 0<η<1 are satisfied.
The substrate 10q, the base layer 20q, the magnetoresistance layer 30q, and the cap layer 40q of the magnetoresistive effect element 1q may be similar to the substrate 10, the base layer 20, the magnetoresistance layer 30, and the cap layer 40 of the magnetoresistive effect element 1, respectively.
Since one of the first ferromagnetic layer 31q and the second ferromagnetic layer 32q of the magnetoresistance layer 30q is a magnetization free layer, and the other is a magnetization fixed layer, the first ferromagnetic layer 31q may be a magnetization fixed layer, and the second ferromagnetic layer 32q may be a magnetization free layer. In this case, the antiferromagnetic layer 35q is provided, for example, on the surface of the first ferromagnetic layer 31q opposite to the nonmagnetic spacer layer 36q. The first ferromagnetic layer 31q and the second ferromagnetic layer 32q can be formed by co-sputtering using a CoMnSi alloy target and a Fe target. The composition ratio of Fe in the first ferromagnetic layer 31q and the second ferromagnetic layer 32q is controlled, for example, by the sputtering output during film formation.
In this embodiment, in Formula (3), X can be Co. In a Heusler alloy, in which X is Co, the Curie temperature is sufficiently higher than room temperature, so that large magnetoresistive effect is produced even at room temperature. In addition, in Formula (3), Z can be Si. In a Heusler alloy containing Si, the Curie temperature is high, so that large magnetoresistive effect is produced even at room temperature.
The relationship between the values of α and β in the Heusler alloy Co2MnαSiβ and the level of magnetoresistive effect in the magnetoresistive effect element 1 can be applied to the Heusler alloy X2(MnεGη)αZβ of the magnetoresistive effect element 1q. In other words, the relationship between the values of α and β and the regions I to V in
Accordingly, in the Heusler alloy X2(MnεGη)αZβ in this magnetoresistive effect element 1q, α+β<2 and 0<g<1 are satisfied and the total ratio of Mn and Z in X2(MnεGη)αZβ is smaller than ½, so that the Heusler alloy X2(MnεGη)αZβ hardly contains excess Mn. Accordingly, Mn easily enters the Mn site correctly while excess Mn is hardly contained, so that X easily enters the Mn site to form a XMn antisite, thereby suppressing the diffusion of Mn into the nonmagnetic spacer layer. In addition, in the Heusler alloy X2(MnεGη)αZβ, ⅔<α+β is satisfied and the total ratio of Mn, G, and Z in the Heusler alloy X2(MnεGη)αZβ can be greater than ¼. Accordingly, the composition of the Heusler alloy X2(MnεGη)αZβ does not largely deviate from the stoichiometric composition, so that the spin polarizability easily increases. The resulting magnetoresistive effect element provides large magnetoresistive effect.
In addition, in the magnetoresistive effect element 1q according to this modification, in Formula (3), β<(2+α)/3 may be satisfied. In this magnetoresistive effect element 1q, the ratio of Z in the Heusler alloy X2(MnεGη)αZβ is less than ¼, so that Mn easily enters the Z site to form a MnZ antisite. Movement of Mn more easily stays within the crystalline structure of the Heusler alloy X2(MnεGη)αZβ layer, thereby further suppressing diffusion of Mn into area other than the Heusler alloy layer.
In the magnetoresistive effect element 1q according to this modification, in Formula (3), β>α may be satisfied. In this magnetoresistive effect element 1q, β>α and 0<ε<1 are satisfied and Mn is less than Z, so that movement of Mn into the nonmagnetic spacer layer is further suppressed.
In the magnetoresistive effect element 1q according to this modification, in Formula (3), Z may be Si. In this magnetoresistive effect element 1q, when the Heusler alloy contains Si, the Curie temperature is high, so that large magnetoresistive effect is produced even at room temperature.
The magnetoresistance layer 30r includes a first ferromagnetic layer 31r serving as a magnetization free layer, a second ferromagnetic layer 32r serving as a magnetization fixed layer, and a nonmagnetic spacer layer 36r provided between the first ferromagnetic layer 31r and the second ferromagnetic layer 32r. The second ferromagnetic layer 32r is provided, for example, on the nonmagnetic spacer layer 36r. At least one of the first ferromagnetic layer 31r and the second ferromagnetic layer 32r contains the Heusler alloy represented by Formula (3). The nonmagnetic spacer layer 36r can contain Ag or Ag-containing metal represented by Formula (A).
In this modification, the magnetoresistance layer 30r can further include at least one of a third ferromagnetic layer 33r and a fourth ferromagnetic layer 34r. The third ferromagnetic layer 33r serves as a magnetization free layer together with the first ferromagnetic layer 31r, and the fourth ferromagnetic layer 34r serves as a magnetization fixed layer together with the second ferromagnetic layer 32r. In the magnetoresistive effect element Ir, the first ferromagnetic layer 31r is provided, for example, between the third ferromagnetic layer 33r and the nonmagnetic spacer layer 36r. The second ferromagnetic layer 32r is provided, for example, between the fourth ferromagnetic layer 34r and the nonmagnetic spacer layer 36r.
In the magnetoresistance layer 30r, the third ferromagnetic layer 33r and the fourth ferromagnetic layer 34r can contain the Heusler alloy represented by Formula (4).
D2(MnεGη)δEθ (4)
In Formula (4), D represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, and G represents at least one of the elements of Fe and Cr. When G contains Fe, D does not contain Fe. In other words, D represents at least one element selected from the group consisting of Co, Ni, Ru, and Rh. E represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and 2<δ+θ<2.6, 0<ε<1, and 0<l<1 are satisfied. In this modification, in Formula (4), X can be Co, and Z can be Si.
In the Heusler alloy Co2(MnεGη)δSiθ represented by Formula (4), like the Heusler alloy Co2MnδSiθ, when 2<δ+θ<2.6, the effect of the formation of antisites on the spin polarizability decreases, allowing the third ferromagnetic layer 33r and the fourth ferromagnetic layer 34r to easily maintain half metal characteristics. Consequently, the third ferromagnetic layer 33r serves as a magnetization free layer together with the first ferromagnetic layer 31r, and the spin polarizability of the magnetization free layer increases. Further, the fourth ferromagnetic layer 34r serves as a magnetization fixed layer together with the second ferromagnetic layer 32r, so that the spin polarizability of the magnetization fixed layer increases. The magnetoresistive effect element Ir can provide large magnetoresistive effect.
Regarding the third ferromagnetic layer 33r and the fourth ferromagnetic layer 34r, in the Heusler alloy Co2MnδSiθ, 2<δ+θ<2.6 is satisfied, so that the total ratio of Mn, G, and Si in Co2(MnεGη)αSiβ is greater than ½. For this reason, the Heusler alloy Co2(MnεGη)αSiθ in the third ferromagnetic layer 33r and the fourth ferromagnetic layer 34r can contain excess Mn. In this embodiment, the first ferromagnetic layer 31r provided between the third ferromagnetic layer 33r and the nonmagnetic spacer layer 36r can suppress movement of Mn from the third ferromagnetic layer 33r to the nonmagnetic spacer layer 36r. Further, the second ferromagnetic layer 32r provided between the fourth ferromagnetic layer 34r and the nonmagnetic spacer layer 36r can suppress movement of Mn from the fourth ferromagnetic layer 34r to the nonmagnetic spacer layer 36r.
The thickness of the first ferromagnetic layer 31r is, for example, 1 nm to 20 nm. The thickness of the second ferromagnetic layer 32r is, for example, 1 nm to 20 nm. The thickness of the third ferromagnetic layer 33r is, for example, 1 nm to 20 nm. The thickness of the fourth ferromagnetic layer 34r is, for example, 1 nm to 20 nm. The thickness of the nonmagnetic spacer layer 36r is, for example, greater than or equal to 1 nm and less than or equal to 10 nm.
In the magnetoresistive effect element Ir according to this modification, the nonmagnetic spacer layer may contain Ag or Ag-containing metal represented by Formula (A).
AgγL1-γ (A)
In Formula (A), L is at least one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<γ≤1 is satisfied.
In this magnetoresistive effect element Ir, the nonmagnetic spacer layer 36r contains Ag or Ag-containing metal represented by Formula (A), and the lattice constant of Ag or Ag-containing metal can be adjusted by changing the value of L and/or γ of the element. Adjustment of this lattice constant can reduce lattice mismatch between the nonmagnetic spacer layer 36r and the first ferromagnetic layer 31r and/or the second ferromagnetic layer 32r. Reducing lattice mismatch improves the crystallinity of the first ferromagnetic layer 31r and/or the second ferromagnetic layer 32r and the nonmagnetic spacer layer 36r, thereby producing larger magnetoresistive effect.
A magnetoresistive effect element will now be further described with examples and comparative examples of the present disclosure, but the present disclosure should not be limited to the examples below.
Table 1 collectively shows the values of α, β, α+β, and (2+α)/3, and magnetoresistive ratios (MR ratios) (%) related to the magnetoresistive effect elements according to Examples 1 and 2 and Comparative Examples 1 and 2 fabricated as described later.
The MR ratio related to each magnetoresistive effect element was estimated from the magnitude of the measured magnetic resistance. The MR ratio is expressed in percentage and was obtained by Formula (5) below.
MR ratio (%)=((RAP−P)/RP)×100(%) (5)
In this Formula (5), RAP is the magnitude of the resistance of the magnetoresistive effect element in the state where the direction of the magnetization of the first ferromagnetic layer and the direction of the magnetization of the second ferromagnetic layer are antiparallel to each other. RP is the magnitude of the resistance of the magnetoresistive effect element in the state where the direction of the magnetization of the first ferromagnetic layer and the direction of the magnetization of the second ferromagnetic layer are parallel to each other.
Subsequently, a magnetoresistance layer 80a was formed on the base layer 70a by sputtering. To be specific, a first ferromagnetic layer 81a (having a thickness of 10 nm) and an Ag layer (having a thickness of 5 nm) serving as the nonmagnetic spacer layer 82a were formed in this order on the CoFe buffer layer 74a of the base layer 70a. These two layers were formed at room temperature. Heat treatment was not performed after the formation of these two layers. Subsequently, a second ferromagnetic layer 83a (having a thickness of 3 nm) was formed on the nonmagnetic spacer layer 82a. The second ferromagnetic layer 83a was formed at room temperature. Heat treatment (at a temperature of 550° C.) was performed after the formation of the second ferromagnetic layer 83a. The first ferromagnetic layer 81a and the second ferromagnetic layer 83a were both Co2MnαSiβ layers and the values of α and β were as shown in Table 1.
Subsequently, a cap layer 90a was formed on the magnetoresistance layer 80a by electron beam evaporation. To be specific, a Ru layer (having a thickness of 5 nm) serving as the cap layer 90a was formed on the second ferromagnetic layer 83a of the magnetoresistance layer 80a. The cap layer 90a was formed at room temperature. Heat treatment was not performed after the formation of the cap layer 90a.
In Example 2, fabrication of a magnetoresistive effect element and estimation of the MR ratio were performed in the same procedure of fabrication and estimation of Example 1. The first ferromagnetic layer and the second ferromagnetic layer in Example 2 were both Co2MnαSiβ layers and the values of α and β were as shown in Table 1.
In Comparative Examples 1 and 2, fabrication of a magnetoresistive effect element and estimation of the MR ratio were performed in the same procedure of fabrication and estimation of Example 1. Both the first ferromagnetic layer and the second ferromagnetic layer in Comparative Examples 1 and 2 were Co2MnαSiβ layers and the values of α and β were as shown in Table 1.
As shown in Table 1, the magnetoresistive effect elements according to Examples 1 and 2 have larger MR ratios than the magnetoresistive effect elements according to Comparative Examples 1 and 2. Further, the magnetoresistive effect element according to Example 1 has a larger MR ratio than the magnetoresistive effect element according to Example 2. In Examples 1 and 2, ⅔<α+β<2 and β<(2+α)/3 are satisfied. In Example 1, β >α is further satisfied.
Table 2 collectively shows the values of α, β, α+β, and (2+α)/3, and MR ratios (%) related to the magnetoresistive effect elements according to Examples 3 and 4 and Comparative Example 3 fabricated as described later.
Subsequently, a magnetoresistance layer 80b was formed on the base layer 70b by sputtering. To be specific, a first ferromagnetic layer 81b (having a thickness of 3 nm) was formed on the CoFe buffer layer 72b of the base layer 70b. The first ferromagnetic layer 81b was formed at room temperature. After the formation of the first ferromagnetic layer 81b, heat treatment (at a temperature of 500° C.) was performed. Subsequently, an Ag layer (having a thickness of 5 nm) serving as the nonmagnetic spacer layer 82b was formed on the first ferromagnetic layer 81b. The nonmagnetic spacer layer 82b was formed at room temperature. Heat treatment was not performed after the formation of the nonmagnetic spacer layer 82b. Subsequently, a second ferromagnetic layer 83b (having a thickness of 3 nm) was formed on the nonmagnetic spacer layer 82b. The second ferromagnetic layer 83b was formed at room temperature. After the formation of the second ferromagnetic layer 83b, heat treatment (at a temperature of 500° C.) was performed. Subsequently, a CoFe buffer layer 84b (having a thickness of 1.1 nm) and an IrMn layer (having a thickness of 10 nm) serving as the antiferromagnetic layer 85b were formed in this order on the second ferromagnetic layer 83b by sputtering. These two layers were formed at room temperature. Heat treatment was not performed after the formation of these two layers. The first ferromagnetic layer 81b and the second ferromagnetic layer 83b were Co2MnαSiβ layers and the values of α and β were as shown in Table 2.
Subsequently, a cap layer 90b was formed on the magnetoresistance layer 80b by sputtering. To be specific, a Ru layer (having a thickness of 5 nm) serving as the cap layer 90b was formed on the antiferromagnetic layer 85b of the magnetoresistance layer 80b. The cap layer 90b was formed at room temperature. Heat treatment was not performed after the formation of the cap layer 90b.
In Example 3, after the formation of the magnetoresistive effect element 1b, heat treatment was performed in the magnetic field to impart unidirectional anisotropy to the second ferromagnetic layer. The heat treatment temperature for this heat treatment in the magnetic field was 325° C., and the magnitude of the applied magnetic field was 5k Oe (399 kA/m).
In Example 4, fabrication of a magnetoresistive effect element and estimation of the MR ratio were performed in the same procedure as that of fabrication and estimation of Example 3. The first ferromagnetic layer and the second ferromagnetic layer in Example 4 were Co2MnαSiβ layers and the values of α and β were as shown in Table 2.
In Comparative Example 3, fabrication of a magnetoresistive effect element and estimation of the MR ratio were performed in the same procedure as that of fabrication and estimation of Example 3. The first ferromagnetic layer and the second ferromagnetic layer in Comparative Example 3 were Co2MnαSiβ layers and the values of α and β were as shown in Table 2.
As shown in Table 2, the magnetoresistive effect elements according to Examples 3 and 4 have larger MR ratios than the magnetoresistive effect elements according to Comparative Example 3. Further, the magnetoresistive effect element according to Example 3 has a larger MR ratio than the magnetoresistive effect element according to Example 4. In Examples 3 and 4, ⅔<α+β<2 and β<(2+α)/3 are satisfied. In Example 3, β>α is further satisfied.
Subsequently, a cap layer 90c was formed on the magnetoresistance layer 80c by electron beam evaporation. To be specific, a Ru layer (having a thickness of 5 nm) serving as the cap layer 90c was formed on the fourth ferromagnetic layer 85c of the magnetoresistance layer 80c. The cap layer 90c was formed at room temperature. Heat treatment was not performed after the formation of the cap layer 90c.
Subsequently, an Ag buffer layer 73d (having a thickness of 100 nm) was formed on the CoFe seed layer 72d. The Ag buffer layer 73d was formed at room temperature. Heat treatment (at a temperature of 300° C.) was performed after the formation of the Ag buffer layer 73d. Subsequently, a CoFe buffer layer 74d (having a thickness of 10 nm) was formed on the Ag buffer layer 73d. The CoFe buffer layer 74d was formed at room temperature. Heat treatment was not performed after the formation of the CoFe buffer layer 74d.
Subsequently, a magnetoresistance layer 80d was formed on the base layer 70d by sputtering. To be specific, a first ferromagnetic layer 81d (having a thickness of 10 nm) and an Ag layer (having a thickness of 5 nm) serving as the nonmagnetic spacer layer 82d were formed in this order on the CoFe buffer layer 74d of the base layer 70d. The first ferromagnetic layer 81d was formed by co-sputtering using a CoMnSi alloy target and a Fe target. The two layers: first ferromagnetic layer 81d and the nonmagnetic spacer layer 82d were formed at room temperature, and heat treatment was not performed after the formation of these two layers. Subsequently, a second ferromagnetic layer 83d (having a thickness of 3 nm) was formed on the nonmagnetic spacer layer 82d. The second ferromagnetic layer 83d was formed by co-sputtering using a CoMnSi alloy target and a Fe target. The ratio of Fe in the first ferromagnetic layer 81d and the second ferromagnetic layer 83d was controlled by the sputtering output during film formation. The second ferromagnetic layer 83d was formed at room temperature. After the formation of the second ferromagnetic layer 83d, heat treatment (at a temperature of 550° C.) was performed. The first ferromagnetic layer 81d and the second ferromagnetic layer 83d were Co2(MnεFeη)αSiβ layers and the values of ε, η, α, and β were as shown in Table 3.
Subsequently, a cap layer 90d was formed on the magnetoresistance layer 80d by electron beam evaporation. To be specific, a Ru layer (having a thickness of 5 nm) serving as the cap layer 90d was formed on the second ferromagnetic layer 83d of the magnetoresistance layer 80d. The cap layer 90d was formed at room temperature. Heat treatment was not performed after the formation of the cap layer 90d.
In Comparative Examples 4 to 6, fabrication of a magnetoresistive effect element and estimation of the MR ratio were performed in the same procedure as that of fabrication and estimation of Example 6. Both the first ferromagnetic layer and the second ferromagnetic layer in Comparative Examples 4 to 6 were Co2(MnεFeη)Siβ layers and the values of Σ, η, α, and β were as shown in Table 3.
As shown in Table 3, the magnetoresistive effect element according to Example 6 has a larger MR ratio than the magnetoresistive effect elements according to Comparative Examples 4 to 6. In Example 6, ⅔<α+β<2 and β<(2+α)/3 are satisfied.
In Example 7, fabrication of a magnetoresistive effect element and estimation of the MR ratio were performed in the same procedure as that of fabrication and estimation of Example 6 except that heat treatment was performed at a temperature of 575° C. after the formation of the second ferromagnetic layer 83d. Both the first ferromagnetic layer and the second ferromagnetic layer in Example 7 were Co2(MnεFeη)αSiβ layers as in Example 6. The values of ε, η, α, and β in the first ferromagnetic layer and the second ferromagnetic layer were as shown in Table 4.
In Comparative Example 7, fabrication of a magnetoresistive effect element and estimation of the MR ratio were performed in the same procedure as that of fabrication and estimation of Example 7. The values of ε, η, α, and β in the first ferromagnetic layer and the second ferromagnetic layer were as shown in Table 4.
As shown in Table 4, the magnetoresistive effect element according to Example 7 has a larger MR ratio than the magnetoresistive effect element according to Comparative Example 7. In Example 7, ⅔<α+β<2 and β<(2+α)/3 are satisfied.
As shown in Tables 3 and 4, even if the temperature of heat treatment performed after the formation of the second ferromagnetic layer 83d is changed from 550° C. of Example 6 to 575° C. of Example 7, the MR ratio of Example 7 and the MR ratio of Example 6 both exceed 20%.
The present disclosure has been described so far referring to the embodiments, modifications, and examples, but the present disclosure should not be limited to these embodiments, modifications, and examples and various variations can be made. For example, the magnetoresistive effect element 1 of the embodiments above can have a current in plane (CIP) structure in which a detection current flows along the stacking surface direction, instead of a CPP structure.
The embodiments provide a magnetoresistive effect element in which the ferromagnetic layer of a magnetoresistance layer contains a Heusler alloy containing Mn and which provides large magnetoresistive effect.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2018-037806 | Mar 2018 | JP | national |
| 2018-160649 | Aug 2018 | JP | national |
