Patent Application
20240263337
The present invention relates to a maintenance method of plating apparatus.
Conventionally, there has been known what is called a cup type plating apparatus as a plating apparatus that performs a plating process on a substrate (for example, see PTL 1, PTL 2). The plating apparatus includes a plating tank. An inside of the plating tank is partitioned by a membrane into an anode chamber below the membrane and a cathode chamber above the membrane. An anode is arranged in the anode chamber, and a substrate as a cathode is arranged in the cathode chamber. In performing the plating process of forming a plating film on the substrate, an anode liquid (plating solution) accumulated in an anode liquid tank is circulated between the anode liquid tank and the anode chamber, and a cathode liquid (plating solution) accumulated in a cathode liquid tank is circulated between the cathode liquid tank and the cathode chamber.
PTL 1: Japanese Unexamined Patent Application Publication No. 2008-19496
PTL 2: U.S. Pat. No. 6,821,407
In a cup type plating apparatus as described above, a maintenance of the plating apparatus is sometimes executed, for example, in a case where the plating process is not performed on the substrate. Specifically, in the maintenance of the plating apparatus, for example, the anode liquid remaining in the anode chamber of the plating tank is returned to the anode liquid tank to be circulated between the anode liquid tank and the anode chamber, and the cathode liquid remaining in the cathode chamber of the plating tank is returned to the cathode liquid tank to be circulated between the cathode liquid tank and the cathode chamber. However, the maintenance of the plating apparatus has a room for improvement in suppressing deformation of the membrane arranged in the inside of the plating tank.
The present invention has been made in view of the above, and has one object of providing a technique that allows suppressing deformation of a membrane arranged in the inside of the plating tank.
(Aspect 1)
To achieve the above-described object, a maintenance method of plating apparatus according to one aspect of the present invention includes: returning an anode liquid remaining in an anode chamber partitioned below a membrane in an inside of a plating tank to an anode liquid tank for accumulating an anode liquid; returning a cathode liquid remaining in a cathode chamber partitioned above the membrane in the inside of the plating tank to a cathode liquid tank for accumulating a cathode liquid; circulating the anode liquid between the anode liquid tank and the anode chamber after having returned the anode liquid remaining in the anode chamber to the anode liquid tank; and circulating the cathode liquid between the cathode liquid tank and the cathode chamber after having returned the cathode liquid remaining in the cathode chamber to the cathode liquid tank and after the circulation of the anode liquid between the anode liquid tank and the anode chamber is started.
With this aspect, the circulation of the anode liquid between the anode liquid tank and the anode chamber is started before the circulation of the cathode liquid between the cathode liquid tank and the cathode chamber. Therefore, a pressure increase in the anode chamber can be started before a pressure increase in the cathode chamber. Accordingly, for example, the circulation of the cathode liquid is started before the circulation of the anode liquid, and thus compared with a case where the pressure increase in the cathode chamber is started before the pressure increase in the anode chamber, the downward deformation of the membrane arranged in the inside of the plating tank by the pressure in the cathode chamber can be suppressed.
(Aspect 2)
The aspect 1 described above may further include, replenishing an anode liquid supplied from an anode liquid supply device into the anode liquid tank such that a liquid surface level of the anode liquid accumulated in the anode liquid tank becomes equal to or more than a predetermined level when the liquid surface level of the anode liquid accumulated in the anode liquid tank is less than the predetermined level set in advance.
(Aspect 3)
In the aspect 2 described above, the circulating of the anode liquid between the anode liquid tank and the anode chamber may be performed after having returned the anode liquid remaining in the anode chamber to the anode liquid tank and when the liquid surface level of the anode liquid accumulated in the anode liquid tank is equal to or more than the predetermined level.
(Aspect 4)
Any one of the aspects 1 to 3 described above may further include replenishing a cathode liquid supplied from a cathode liquid supply device into the cathode liquid tank such that a liquid surface level of the cathode liquid accumulated in the cathode liquid tank becomes equal to or more than a predetermined level when the liquid surface level of the cathode liquid accumulated in the cathode liquid tank is less than the predetermined level set in advance.
(Aspect 5)
The aspect 4 described above may further include returning the cathode liquid accumulated in the cathode liquid tank to the cathode liquid tank after having caused the cathode liquid to flow bypassing the cathode chamber before the circulating of the cathode liquid between the cathode liquid tank and the cathode chamber when the liquid surface level of the cathode liquid accumulated in the cathode liquid tank is equal to or more than the predetermined level.
With this aspect, by returning the cathode liquid to the cathode liquid tank after having caused the cathode liquid to flow bypassing the cathode chamber, an amount of gas bubbles included in the cathode liquid can be reduced. Accordingly, the amount of gas bubbles included in the cathode liquid supplied to the cathode chamber can be reduced in the circulation of the cathode liquid between the cathode liquid tank and the cathode chamber performed later.
(Aspect 6)
In any one of the aspects 1 to 5 described above, the circulating of the anode liquid between the anode liquid tank and the anode chamber may include adjusting a temperature of the anode liquid flowing from the anode liquid tank toward the anode chamber within a predetermined temperature range by a temperature controller.
With this configuration, the temperature of the anode liquid flowing from the anode liquid tank to the anode chamber can be set early within the predetermined temperature range.
(Aspect 7)
In any one of the aspects 1 to 6 described above, the circulating of the cathode liquid between the cathode liquid tank and the cathode chamber may include adjusting a temperature of the cathode liquid flowing from the cathode liquid tank toward the cathode chamber within a predetermined temperature range by a temperature controller.
With this aspect, the temperature of the cathode liquid flowing from the tank toward the cathode chamber can be set early within the predetermined temperature range.
The following describes embodiments of the present invention with reference to the drawings. Note that the drawings are schematically illustrated to facilitate understanding of features, and dimensional proportions and the like of each constituent element are not necessarily the same as the actual ones. In some drawings, orthogonal coordinates of X-Y-Z are illustrated for reference. Of the orthogonal coordinates, the Z-direction corresponds to an upper side, and the -Z-direction corresponds to a lower side (direction in which gravity acts).
The load port 100 is a module for loading a substrate housed in a cassette, such as a FOUP, (not illustrated) to the plating apparatus 1000 and unloading the substrate from the plating apparatus 1000 to the cassette. While the four load ports 100 are arranged in the horizontal direction in this embodiment, the number of load ports 100 and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring the substrate that is configured to grip or release the substrate between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryers 600. The transfer robot 110 and the transfer device 700 can perform delivery and receipt of the substrate via a temporary placement table (not illustrated) to grip or release the substrate between the transfer robot 110 and the transfer device 700.
The aligner 120 is a module for adjusting a position of an orientation flat, a notch, and the like of the substrate in a predetermined direction. While the two aligners 120 are disposed to be arranged in the horizontal direction in this embodiment, the number of aligners 120 and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 wets a surface to be plated of the substrate before a plating process with a process liquid, such as pure water or deaerated water, to replace air inside a pattern formed on the surface of the substrate with the process liquid. The pre-wet module 200 is configured to perform a pre-wet process to facilitate supplying the plating solution to the inside of the pattern by replacing the process liquid inside the pattern with a plating solution during plating. While the two pre-wet modules 200 are disposed to be arranged in the vertical direction in this embodiment, the number of pre-wet modules 200 and arrangement of the pre-wet modules 200 are arbitrary.
For example, the pre-soak module 300 is configured to remove an oxidized film having a large electrical resistance present on a surface of a seed layer formed on the surface to be plated of the substrate before the plating process by etching with a process liquid, such as sulfuric acid and hydrochloric acid, and perform a pre-soak process that cleans or activates a surface of a plating base layer. While the two pre-soak modules 300 are disposed to be arranged in the vertical direction in this embodiment, the number of pre-soak modules 300 and arrangement of the pre-soak modules 300 are arbitrary. The plating module 400 performs the plating process on the substrate. There are two sets of the 12 plating modules 400 arranged by three in the vertical direction and by four in the horizontal direction, and the total 24 plating modules 400 are disposed in this embodiment, but the number of plating modules 400 and arrangement of the plating modules 400 are arbitrary.
The cleaning module 500 is configured to perform a cleaning process on the substrate to remove the plating solution or the like left on the substrate after the plating process. While the two cleaning modules 500 are disposed to be arranged in the vertical direction in this embodiment, the number of cleaning modules 500 and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for rotating the substrate after the cleaning process at high speed and drying the substrate. While the two spin rinse dryers 600 are disposed to be arranged in the vertical direction in this embodiment, the number of spin rinse dryers 600 and arrangement of the spin rinse dryers 600 are arbitrary. The transfer device 700 is a device for transferring the substrate between the plurality of modules inside the plating apparatus 1000. The control module 800 is configured to control the plurality of modules in the plating apparatus 1000 and can be configured of, for example, a general computer including input/output interfaces with an operator or a dedicated computer.
An example of a sequence of the plating processes by the plating apparatus 1000 will be described. First, the substrate housed in the cassette is loaded on the load port 100. Subsequently, the transfer robot 110 grips the substrate from the cassette at the load port 100 and transfers the substrate to the aligners 120. The aligner 120 adjusts the position of the orientation flat, the notch, or the like of the substrate in the predetermined direction. The transfer robot 110 grips or releases the substrate whose direction is adjusted with the aligners 120 to the pre-wet module 200.
The pre-wet module 200 performs the pre-wet process on the substrate. The transfer device 700 transfers the substrate on which the pre-wet process has been performed to the pre-soak module 300. The pre-soak module 300 performs the pre-soak process on the substrate. The transfer device 700 transfers the substrate on which the pre-soak process has been performed to the plating module 400. The plating module 400 performs the plating process on the substrate.
The transfer device 700 transfers the substrate on which the plating process has been performed to the cleaning module 500. The cleaning module 500 performs the cleaning process on the substrate. The transfer device 700 transfers the substrate on which the cleaning process has been performed to the spin rinse dryer 600. The spin rinse dryer 600 performs the drying process on the substrate. The transfer robot 110 receives the substrate from the spin rinse dryer 600 and transfers the substrate, on which the drying process is performed, to the cassette at the load port 100. Finally, the cassette housing the substrate is unloaded from the load port 100.
The configuration of the plating apparatus 1000 described in
Subsequently, the plating modules 400 will be described. Since the plurality of plating modules 400 included in the plating apparatus 1000 according to this embodiment have the identical configuration, one of the plating modules 400 will be described.
In this embodiment, one plating module 400 includes a plurality of plating tanks 10. The number of the plurality of plating tanks 10 need only be equal to or more than 2, and a specific number is not particularly limited. In this embodiment, as one example, one plating module 400 includes four plating tanks 10 (see
As illustrated in
It is only necessary for the plating solution Ps to be a solution including ions of a metallic element constituting a plating film, and a specific example of the plating solution Ps is not particularly limited. In this embodiment, a copper plating process is used as an example of the plating process, and a copper sulfate solution is used as an example of the plating solution Ps.
Further, in this embodiment, a predetermined plating additive is included in the plating solution Ps. As a specific example of the predetermined plating additive, a “nonionic plating additive” is used in this embodiment. The nonionic plating additive means an additive that does not exhibit an ionic character in the plating solution Ps.
In the inside of the plating tank 10, an anode 13 is arranged. The anode 13 is arranged so as to extend in the horizontal direction. A specific type of the anode 13 is not particularly limited, and may be an insoluble anode or a soluble anode. In this embodiment, an insoluble anode is used as an example of the anode 13. A specific type of the insoluble anode is not particularly limited, and platinum, iridium oxide, and the like can be used.
In a cathode chamber 12 described later in the inside of the plating tank 10, an ionically resistive element 14 is arranged. Specifically, the ionically resistive element 14 is disposed at a position above a membrane 40 described later in the cathode chamber 12 and below a substrate Wf. The ionically resistive element 14 is a member that can be a resistance to movement of ions in the cathode chamber 12 and is disposed to ensure homogenization of an electric field formed between the anode 13 and the substrate Wf.
The ionically resistive element 14 according to this embodiment is configured of a plate member having a plurality of through-holes 15 disposed so as to penetrate a lower surface and an upper surface of the ionically resistive element 14. The plurality of through-holes 15 are disposed in a hole-forming area (which is a circular area in top view as an example in this embodiment) of the ionically resistive element 14. While a specific material of the ionically resistive element 14 is not particularly limited, a resin, such as polyetheretherketone, is used as an example in this embodiment.
The plating module 400 has the ionically resistive element 14, thereby ensuring homogenization of a film thickness of a plating film (plated layer) to be formed in the substrate Wf. However, the ionically resistive element 14 is not a required member of this embodiment, and the plating module 400 may have a configuration without the ionically resistive element 14.
In the inside of the plating tank 10, the membrane 40 is disposed. The inside of the plating tank 10 is partitioned by the membrane 40 into an anode chamber 11 below the membrane 40, and the cathode chamber 12 above the membrane 40. The above-described anode 13 is arranged in the anode chamber 11, and the ionically resistive element 14 is arranged in the cathode chamber 12. In the plating process on the substrate Wf, the substrate Wf is arranged in the cathode chamber 12.
In this embodiment, the plating solution Ps supplied to the anode chamber 11 is referred to as an “anode liquid,” and the plating solution Ps supplied to the cathode chamber 12 is referred to as a “cathode liquid.”
The membrane 40 is a membrane configured to allow ion species (which include metal ions) included in the plating solution Ps to pass through the membrane 40 and suppress passing of a nonionic plating additive included in the plating solution Ps through the membrane 40. Specifically, the membrane 40 has a plurality of fine holes (micropores) (illustration of the micropores is omitted). An average diameter of the plurality of holes is a size of nanometer (that is, a size of 1 nm or more and 999 nm or less). This allows the ion species (which have a size of nanometer) including metal ions to pass through the plurality of micropores in the membrane 40, while suppressing passing of the nonionic plating additive (which has a size larger than nanometer) through the plurality of micropores of the membrane 40. As the membrane 40, an ion exchange membrane can be used as an example.
As described in this embodiment, the plating module 400 includes the membrane 40, thereby moving of the nonionic plating additive included in the cathode liquid in the cathode chamber 12 to the anode chamber 11 can be suppressed. This can ensure a reduction of a wearing rate of the plating additive in the cathode chamber 12.
As illustrated in
However, the configuration of the membrane 40 is not limited to the above-described configuration. For example, the membrane 40 need not include the inclined portion 41, and may extend entirely in the horizontal direction.
The substrate holder 20 holds the substrate Wf as a cathode such that a surface to be plated (lower surface) of the substrate Wf is opposed to the anode 13. The substrate holder 20 is connected to the rotation mechanism 22. The rotation mechanism 22 is a mechanism for rotating the substrate holder 20. The rotation mechanism 22 is connected to the elevating mechanism 24. The elevating mechanism 24 is supported by a support pillar 26 extending in the vertical direction. The elevating mechanism 24 is a mechanism for moving up and down the substrate holder 20 and the rotation mechanism 22. The operations of the rotation mechanism 22 and the elevating mechanism 24 are controlled by the control module 800. The substrate Wf and the anode 13 are electrically connected to an energization device (not illustrated). The energization device is a device for flowing electricity between the substrate Wf and the anode 13 in performing the plating process.
In the plating tank 10, an anode chamber supply port 16a for supplying the anode liquid to the anode chamber 11, and an anode chamber discharge port 16b for discharging the anode liquid from the anode chamber 11 are disposed. The anode chamber supply port 16a according to this embodiment is arranged in the bottom wall 10a of the plating tank 10 as an example. The anode chamber discharge port 16b is arranged in the outer peripheral wall 10b of the plating tank 10 as an example. In addition, the anode chamber discharge port 16b is disposed at two positions in the plating tank 10 as an example.
In the plating tank 10, a supply/drain port 17 for the cathode chamber 12 is disposed. The supply/drain port 17 is a combination of a “cathode liquid supply port” and a “cathode liquid drain port.”
That is, when the cathode liquid is supplied to the cathode chamber 12, the supply/drain port 17 functions as the “cathode liquid supply port,” and the cathode liquid is supplied from the supply/drain port 17 to the cathode chamber 12. On the other hand, when the cathode liquid is discharged from the cathode chamber 12, for example, when the cathode liquid in the cathode chamber 12 is emptied, the supply/drain port 17 functions as the “cathode liquid drain port,” and the cathode liquid is discharged from the supply/drain port 17.
The configuration of the supply/drain port 17 is not limited to the above-described configuration. As another example, the plating module 400 may individually include the “cathode liquid supply port” and the “cathode liquid drain port” instead of the supply/drain port 17.
The supply/drain port 17 according to this embodiment is arranged, for example, in the outer peripheral wall 10b of the plating tank 10 such that a distance from the bottom portion (bottom surface) of the cathode chamber 12 to the supply/drain port 17 is equal to or less than 20 mm.
The overflow tank 19 is provided with an overflow tank discharge port 18 for discharging the plating solution Ps (cathode liquid) overflowed from the cathode chamber 12 and accumulated in the overflow tank 19 to outside the overflow tank 19.
The plating tank 10 is provided with a pressure gauge 80a for detecting a pressure (Pa) of the anode chamber 11, and a pressure gauge 80b for detecting a pressure (Pa) of the cathode chamber 12. Detection results of the pressure gauge 80a and the pressure gauge 80b are transmitted to the control module 800.
The control module 800 includes a processor 801 and a non-transitory storage device 802. The storage device 802 stores programs, data (UC), and the like. In the control module 800, the processor 801 controls the operation of the plating apparatus 1000 based on commands of the program stored in the storage device 802.
When the plating process on the substrate Wf is executed, first, the rotation mechanism 22 rotates the substrate holder 20, while the elevating mechanism 24 moves the substrate holder 20 downward, and immerses the substrate Wf in the plating solution Ps (cathode liquid of the cathode chamber 12) of the plating tank 10. Subsequently, the energization device causes a current to flow between the anode 13 and the substrate Wf. Accordingly, the plating film is formed on the surface to be plated of the substrate Wf.
In this embodiment, as an example, four plating tanks 10 (plating tanks 10 #1 to #4) are applied to one set of the tank 50 and the tank 51. That is, in this embodiment, as an example, the number of the plating tanks 10 communicating with one set of the tank 50 and the tank 51 via the flow passages is four. However, it is only necessary for the number of the plating tanks 10 applied to one set of the tank 50 and the tank 51 to be plural, and may be less or more than four.
As the plurality of valves (the valves 75a to 75o), a flow rate control valve that can switch at least a valve-closed state (a state where a valve opening degree is 0%, and a flow rate of a liquid passing through the valve is zero) and a valve-opening state (a state where the valve opening degree is larger than 0%, and the flow rate of the liquid passing through the valve is larger than zero) can be used.
Further, as the plurality of valves, a flow rate control valve that can adjust continuously or by stages the valve opening degree within a range of 0% or more to 100% or less (that is, within a range where the flow rate passing through the valve is zero or more to a predetermined value or less) can be used.
The plurality of valves and the plurality of flow passage switch valves may be valves controlled by the control module 800, or manual valves operated by hand. In this embodiment, the plurality of valves and the plurality of flow passage switch valves are controlled by the control module 800.
The tank 50 is a tank for accumulating the anode liquid. The tank 50 communicates with the anode chambers 11. The tank 51 is a tank for retaining the cathode liquid. The tank 51 communicates with the cathode chambers 12. The tank 50 is an example of the “anode liquid tank” and the tank 51 is an example of the “cathode liquid tank.”
The tank 50 is provided with a liquid surface level sensor 81a for detecting a liquid surface level of the anode liquid accumulated in the tank 50. The tank 51 is also provided with a liquid surface level sensor 81b for detecting a liquid surface level of the cathode liquid accumulated in the tank 51. Detection results of the liquid surface level sensors 81a, 81b are transmitted to the control module 800.
The pump 52a is a pump for pressure feeding the anode liquid in the tank 50 toward the anode chambers 11. The pump 52b is a pump for pressure feeding the cathode liquid of the tank 51 toward the cathode chamber 12. Operations of the pumps 52a, 52b are controlled by the control module 800. The pump 52a is an example of the “anode liquid pump,” and the pump 52b is an example of the “cathode liquid pump.”
The temperature controller 53a is a device for adjusting the temperature of the anode liquid. The temperature controller 53b is a device for adjusting the temperature of the cathode liquid. The temperature controller 53a according to this embodiment is arranged in a position downstream with respect to the pump 52a of the flow passage 70a as an example. The temperature controller 53b according to this embodiment is arranged in a position downstream with respect to the pump 52b of the flow passage 70c as an example. Operations of the temperature controllers 53a, 53b are controlled by the control module 800.
As illustrated in
The number of the filters included in the plating module 400 is not limited to one, and may be two or more. Alternatively, the plating module 400 may have a configuration without the filter.
The anode liquid supply device 57a is a device for supplying the anode liquid. The anode liquid supplied from the anode liquid supply device 57a may be an unused anode liquid (that is, a new anode liquid), or may be an anode liquid that has been used in a plating process. The cathode liquid supply device 57b is a device for supplying the cathode liquid. The cathode liquid supplied from the cathode liquid supply device 57b may be an unused cathode liquid (that is, a new cathode liquid), or may be a cathode liquid that has been used in a plating process.
While a specific configuration of the anode liquid supply device 57a is not specifically limited, as an example, the anode liquid supply device 57a may include a tank for accumulating the anode liquid to be supplied, and a pump for pressure feeding the anode liquid in the tank toward the tank 50 via a flow passage 70g1. While a specific configuration of the cathode liquid supply device 57b is not particularly limited, as an example, the cathode liquid supply device 57b may include a tank for accumulating the cathode liquid to be supplied, and a pump for pressure feeding the cathode liquid in the tank toward the tank 51 via a flow passage 70g2. Operations of the anode liquid supply device 57a and the cathode liquid supply device 57b according to this embodiment are controlled by the control module 800.
The additive supply device 57c is a device for supplying the plating additive. In this embodiment, the additive supply device 57c is used for replenishing the plating additive into the plating solution Ps. Specifically, the additive supply device 57c according to this embodiment, for example, is used when replenishing the plating additive into the cathode liquid in the tank 51. An operation of the additive supply device 57c according to this embodiment is controlled by the control module 800.
The metal ion supply device 57d is a device for supplying metal ions. The metal ion supply device 57d according to this embodiment is used for replenishing metal ions into the plating solution Ps. Specifically, the metal ion supply device 57d according to this embodiment, for example, is used when replenishing a solution including metal ions (for example, copper ions) into the cathode liquid in the tank 51. An operation of the metal ion supply device 57d according to this embodiment is controlled by the control module 800.
The flow passage 70a communicates with the tank 50, the pump 52a, and the anode chambers 11 of the respective plating tanks 10. The flow passage 70a according to this embodiment is provided with the temperature controller 53a. The flow passage 70a according to this embodiment is branched into a plurality at a position downstream with respect to the temperature controller 53a, and becomes a flow passage 70a1, a flow passage 70a2, a flow passage 70a3, and a flow passage 70a4, and communicates with the anode chambers 11 of the respective plating tanks 10.
A downstream end of the flow passage 70a1 communicates with the anode chamber supply port 16a of the plating tank 10 #1. A downstream end of the flow passage 70a2 communicates with the anode chamber supply port 16a of the plating tank 10 #2. A downstream end of the flow passage 70a3 communicates with the anode chamber supply port 16a of the plating tank 10 #3. A downstream end of the flow passage 70a4 communicates with the anode chamber supply port 16a of the plating tank 10 #4.
Flow passages 70b1, 70b2, 70b3, 70b4 are flow passages configured to return the anode liquid in the anode chambers 11 of the respective plating tanks 10 into the tank 50.
Specifically, a part upstream with respect to a predetermined position of the flow passage 70b1 according to this embodiment is branched into two and communicates with the two anode chamber discharge ports 16b of the plating tank 10 #1. A downstream end of the flow passage 70b1 communicates with the tank 50. A part upstream with respect to a predetermined position of the flow passage 70b2 is branched into two to communicate with the two anode chamber discharge ports 16b of the plating tank 10 #2. A downstream end of the flow passage 70b2 communicates with the tank 50.
A part upstream with respect to the predetermined position of the flow passage 70b3 is branched into two and communicates with the two anode chamber discharge ports 16b of the plating tank 10 #3. A downstream end of the flow passage 70b3 communicates with the tank 50. A part upstream with respect to a predetermined position of the flow passage 70b4 is branched into two, and communicates with the two anode chamber discharge ports 16b of the plating tank 10 #4. A downstream end of the flow passage 70b4 communicates with the tank 50.
The flow passage 70c communicates with the tank 51, the pump 52b, and the cathode chambers 12 of the respective plating tanks 10. The flow passage 70c according to this embodiment is provided with the temperature controller 53b and the filter 54. The flow passage 70c according to this embodiment is branched into a plurality at a position downstream with respect to the filter 54, and becomes flow passages 70c1, 70c2, 70c3, 70c4.
A downstream end of the flow passage 70c1 communicates with the supply/drain port 17 of the plating tank 10 #1. A downstream end of the flow passage 70c2 communicates with the supply/drain port 17 of the plating tank 10 #2. A downstream end of the flow passage 7c3 communicates with the supply/drain port 17 of the plating tank 10 #3. A downstream end of the flow passage 70c4 communicates with the supply/drain port 17 of the plating tank 10 #4.
Flow passages 70d1, 70d2, 70d3, 70d4 are flow passages configured to return the cathode liquid in the overflow tanks 19 of the respective plating tanks 10 into the tank 51. Specifically, an upstream end of the flow passage 70d1 communicates with the overflow tank discharge port 18 of the plating tank 10 #1, and a downstream end of the flow passage 70d1 communicates with the tank 51. An upstream end of the flow passage 70d2 communicate with the overflow tank discharge port 18 of the plating tank 10 #2, and a downstream end of the flow passage 70d2 communicates with the tank 51. An upstream end of the flow passage 70d3 communicates with the overflow tank discharge port 18 of the plating tank 10 #3, and a downstream end of the flow passage 70d3 communicates with the tank 51. An upstream end of the flow passage 70d4 communicates with the overflow tank discharge port 18 of the plating tank 10 #4, and a downstream end of the flow passage 70d4 communicates with the tank 51. Flow passages 70e1, 70e2, 70e3, 70e4 are flow passages configured to return the cathode liquid into the tank 51 after having caused the cathode liquid to flow bypassing the cathode chamber 12. Specifically, an upstream end of the flow passage 70e1 communicates with a middle of the flow passage 70c1 via the flow passage switch valve 77a, and a downstream end of the flow passage 70e1 communicates with the tank 51. An upstream end of the flow passage 70e2 communicates with a middle of the flow passage 70c2 via the flow passage switch valve 77b, and a downstream end of the flow passage 70e2 communicates with the tank 51. An upstream end of the flow passage 70e3 communicates with a middle of the flow passage 70c3 via the flow passage switch valve 77c, and a downstream end of the flow passage 70e3 communicates with the tank 51. An upstream end of the flow passage 70e4 communicates with a middle of the flow passage 70c4 via the flow passage switch valve 77d, and the downstream end of the flow passage 70e4 communicates with the tank 51.
The flow passage 70g1 is a flow passage configured to cause the anode liquid supplied from the anode liquid supply device 57a to flow into the tank 50. Specifically, an upstream end of the flow passage 70g1 communicates with the anode liquid supply device 57a, and a downstream end of the flow passage 70g1 communicates with the tank 50. The flow passage 70g2 is a flow passage configured to cause the cathode liquid supplied from the cathode liquid supply device 57b to flow into the tank 51. Specifically, an upstream end of the flow passage 70g2 communicates with the cathode liquid supply device 57b, and a downstream end of the flow passage 70g2 communicates with the tank 51.
A flow passage 70g3 is a flow passage configured to cause the plating additive supplied from the additive supply device 57c to flow into the tank 51. The flow passage 70g4 is a flow passage configured to cause a solution including metal ions supplied from the metal ion supply device 57d to flow into the tank 51.
A flow passage 70f is a flow passage configured to cause the tank 50 and the tank 51 to communicate with one another (communication flow passage). Specifically, the flow passage 70f according to this embodiment is configured to cause a middle position of the flow passage 70a (a position upstream with respect to the valve 75a described later) and a middle position of the flow passage 70c (a position upstream with respect to the valve 75j described later) to communicate with one another.
The flow passage 70f is provided with the valve 75k for opening and closing the flow passage 70f. When the valve 75k enter the valve-opening state, the tank 50 and the tank 51 are mutually communicated via the flow passage 70f. On the other hand, when the valve 75k enters the valve-closed state, the tank 50 and the tank 51 enter a non-communicating state.
According to this embodiment, for example, when plating solutions of different components are used as the anode liquid and the cathode liquid, by setting the valve 75k in the valve-closed state and closing the flow passage 70f, it is possible to keep the anode liquid of the tank 50 from mixing with the cathode liquid of the tank 51. On the other hand, for example, when plating solutions of the same components are used as the anode liquid and the cathode liquid, by setting the valve 75k in the valve-opening state and opening the flow passage 70f, the tank 50 and the tank 51 may be caused to communicate with one another, and the tank 50 and the tank 51 may function as one large plating solution tank.
The valve 75a is arranged in a position upstream with respect to the pump 52a in the flow passage 70a and downstream with respect to a position of the flow passage 70a where the flow passage 70f is connected.
The valve 75b is arranged in the flow passage 70a1. The valve 75c is arranged in the flow passage 70a2. The valve 75d is arranged in the flow passage 70a3. The valve 75e is arranged in the flow passage 70a4.
The valve 75f is arranged in the flow passage 70b1. The valve 75g is arranged in the flow passage 70b2. The valve 75h is arranged in the flow passage 70b3. The valve 75i is arranged in the flow passage 70b4.
The valve 75j is arranged in a position upstream with respect to the pump 52b of the flow passage 70c and downstream with respect to a position of the flow passage 70c where the flow passage 70f is connected. A valve 751 is arranged in the flow passage 70g1. The valve 75m is arranged in the flow passage 70g2. The valve 75n is arranged in the flow passage 70g3. The valve 75o is arranged in the flow passage 70g4.
The flow passage switch valve 77a is arranged in a position of the flow passage 70c1 where the flow passage 70e1 is connected. The flow passage switch valve 77a switches a flow destination of a fluid in the flow passage 70c1 between the flow passage 70e1 and the anode chamber 11 of the plating tank 10 #1. The flow passage switch valve 77b is arranged in a position of the flow passage 70c2 where the flow passage 70e2 is connected. The flow passage switch valve 77b switches a flow destination of a fluid in the flow passage 70c2 between the flow passage 70e2 and the anode chamber 11 of the plating tank 10 #2.
The flow passage switch valve 77c is arranged in a position of the flow passage 70c3 where the flow passage 70e3 is connected. The flow passage switch valve 77c switches a flow destination of the fluid in the flow passage 70c3 between the flow passage 70e3 and the anode chamber 11 of the plating tank 10 #3. The flow passage switch valve 77d is arranged in a position of the flow passage 70e4 where the flow passage 70c4 is connected. The flow passage switch valve 77d switches a flow destination of the fluid in the flow passage 70c4 between the flow passage 70e4 and the anode chamber 11 of the plating tank 10 #4.
What is called a three-way valve can be used as the flow passage switch valves 77a, 77b, 77c, 77d.
First, the plating solution circulating step according to step S20 in
Specifically, when the anode liquid is circulated, the pump 52a is driven while the valves 75a, 75b, 75c, 75d, 75e, 75f, 75g, 75h, 75i are set in the valve-opening state. Accordingly, the anode liquid of the tank 50 flows through the flow passages 70a1, 70a2, 70a3, 70a4 after flowing through the flow passage 70a, and flows into the anode chambers 11 of the plating tanks 10 #1 to #4. The anode liquid in the anode chambers 11 of the plating tanks 10 #1 to #4 returns to the tank 50 after flowing through the flow passages 70b1, 70b2, 70b3, 70b4.
The flow passages 70a, 70a1, 70a2, 70a3, 70a4 are examples of the “anode liquid supply flow passage” for supplying the anode liquid in the tank 50 to the anode chambers 11. The flow passages 70b1, 70b2, 70b3, 70b4 are examples of the “anode liquid return flow passage” for returning the anode liquid in the anode chambers 11 to the tank 50. The anode liquid supply flow passage and the anode liquid return flow passage are examples of an “anode liquid circulation flow passage” for circulating the anode liquid between the tank 50 and the anode chambers 11.
When the cathode liquid is circulated, specifically, the pump 52b is driven while the valve 75j is set in the valve-opening state. Furthermore, the flow passage switch valves 77a, 77b, 77c, 77d are switched to let the cathode liquid flow into the cathode chambers 12. Accordingly, the cathode liquid in the tank 51 flows through the flow passages 70c1, 70c2, 70c3, 70c4 after flowing through the flow passage 70c, and flows into the cathode chambers 12 of the plating tanks 10 #1 to #4. The cathode liquid overflowed from the cathode chambers 12 and flowed into the overflow tanks 19 flows through the flow passages 70d1, 70d2, 70d3, 70d4, and returns to the tank 51.
The flow passages 70c, 70c1, 70c2, 70c3, 70c4 are examples of the “cathode liquid supply flow passage” for supplying the cathode liquid in the tank 51 to the cathode chamber 12. The flow passages 70d1, 70d2, 70d3, and 70d4 are examples of the “cathode liquid return flow passage” for returning the cathode liquid in the cathode chamber 12 to the tank 51. The cathode liquid supply flow passage and the cathode liquid return flow passage are examples of a “cathode liquid circulation flow passage” for circulating the cathode liquid between the tank 51 and the cathode chambers 12.
In step S20, the temperature of the anode liquid may be adjusted within a predetermined temperature range by the temperature controller 53a. Similarly, the temperature of the cathode liquid may be adjusted within a predetermined temperature range by the temperature controller 53b. While specific values of the temperature ranges are not particularly limited, for example, they may be a range of 30° C. or more to 70° C. or less, more specifically, 40° C. or more to 60° C. or less.
According to this embodiment, each plating module 400 includes a plurality of plating tanks 10. In each plating module 400, the anode liquid is circulated between the anode chambers 11 of a plurality of plating tanks 10 and the tank 50, and the cathode liquid is circulated between the cathode chambers 12 of the plurality of plating tanks 10 and the tank 51. Due to the configuration, the circulations of the anode liquid and the cathode liquid in one plating module 400 are performed independent from the circulations of the anode liquid and the cathode liquid in the other plating modules 400. Accordingly, the maintenance of a part of the plating modules 400 can be performed independent from the other plating modules 400. Specifically, for example, the maintenance of a part of the plating modules 400 can be performed while the plating process on the substrates Wf of the other plating modules 400 is being performed.
When performing step S20, by adjusting the valves 75f, 75g, 75h, and 75i, pressures in the anode chambers 11 of the plating tanks 10 #1 to #4 may be adjusted. For example, the valves 75f, 75g, 75h, 75i may be adjusted such that the pressures in the anode chambers 11 of the plating tanks 10 #1 to #4 respectively have the same values as pressures in the cathode chambers 12 of the plating tanks 10 #1 to #4.
Specifically, for example, by reducing the valve opening degree of the valve 75f to reduce the flow rate of the anode liquid passing through the valve 75f, the pressure in the anode chamber 11 of the plating tank 10 #1 can be increased. On the other hand, by increasing the valve opening degree of the valve 75f to increase the flow rate of the anode liquid passing through the valve 75f, the pressure in the anode chamber 11 of the plating tank 10 #1 can be reduced. Thus, by adjusting the valve opening degree of the valve 75f within a range of 0% or more to 100% or less, the pressure in the anode chamber 11 of the plating tank 10 #1 can be adjusted. Accordingly, the pressure in the anode chamber 11 of the plating tank 10 #1 can have the same values as the pressure in the cathode chamber 12.
Similarly, by adjusting the valve opening degree of the valve 75g, the pressure in the anode chamber 11 of the plating tank 10 #2 can be adjusted, and the pressure in the anode chamber 11 may have the same value as the cathode chamber 12. By adjusting the valve opening degree of the valve 75h, a pressure in the anode chamber 11 of the plating tank 10 #3 can be adjusted, and the pressure in the anode chamber 11 can have the same value as the pressure in the cathode chamber 12. By adjusting the valve opening degree of the valve 75i, the pressure in the anode chamber 11 of the plating tank 10 #4 can be adjusted, and the pressure in the anode chamber 11 can have the same value as the pressure in the cathode chamber 12.
Note that, the pressures in the anode chambers 11 of the plating tanks 10 #1 to #4 may be obtained, for example, based on detection results of the pressure gauge 80a. The pressures of the cathode chambers 12 of the plating tanks 10 #1 to #4 may be obtained, for example, based on detection results of the pressure gauge 80b.
Subsequently, a chemical liquid preparation process according to step S10 in
In the chemical liquid preparation process, first, an “anode liquid collecting step” of returning the anode liquid remaining in the anode chambers 11 of the plurality of plating tanks 10 to the tank 50 communicating with the anode chambers 11 is performed. In addition, a “cathode liquid collecting step” of returning the cathode liquid remaining in the cathode chambers 12 of the plurality of plating tanks 10 to the tank 51 communicating with the cathode chambers 12 is performed.
Specifically, in the anode liquid collecting step, by setting the valves 75f, 75g, 75h, 75i in the valve-opening state in a state where the pump 52a is stopped, the anode liquid in the respective anode chambers 11 are caused to flow through the flow passages 70b1, 70b2, 70b3, 70b4, and return (be collected) to the tank 50. In this case, the anode liquid in the anode chambers 11 returns to the tank 50 using gravity.
In the cathode liquid collecting step, by switching the flow passage switch valves 77a, 77b, 77c, 77d such that the flow passages 70e1, 70e2, 70e3, 70e4 are in a communicating state with the cathode chambers 12, in a state where the pump 52b is stopped, the cathode liquid of the respective cathode chambers 12 are caused to flow through the flow passages 70e1, 70e2, 70e3, 70e4, and return (be collected) to the tank 51. In this case, the cathode liquid in the cathode chambers 12 returns to the tank 51 using gravity.
In this embodiment, the anode liquid collecting step may be performed until a volume of the anode liquid remaining in the anode chambers 11 becomes 10% or less, preferably 5% or less, or more preferably 1% or less than a volume of the anode chambers 11. Similarly, in this embodiment, the cathode liquid collecting step may be performed until a volume of the cathode liquid remaining in the cathode chambers 12 becomes 10% or less, preferably 5% or less, or more preferably 1% or less than a volume of the cathode chambers 12.
Specifically, in this embodiment, the anode liquid collecting step may be performed for a predetermined time period set in advance. As for the predetermined time period, it is only necessary, for example, to set a time period that allows the volume of the anode liquid remaining in the anode chambers 11 to be 10% or less, preferably 5% or less, or more preferably 1% or less than the volume of the anode chambers 11 by performing experiments, simulations, and the like, in advance.
Similarly, in this embodiment, the cathode liquid collecting step may be performed for a predetermined time period set in advance. As for the predetermined time period, it is only necessary, for example, to set a time period that allows the volume of the cathode liquid remaining in the cathode chamber 12 to be 10% or less, preferably 5% or less, or more preferably 1% or less than the volume of the cathode chamber 12 by performing experiments, simulations, and the like, in advance.
Subsequently, an “anode liquid surface level determining step” of determining whether the liquid surface level of the anode liquid accumulated in the tank 50 is equal to or more than a predetermined level set in advance, and a “cathode liquid surface level determining step” of determining whether the liquid surface level of the cathode liquid accumulated in the tank 51 is equal to or more than a predetermined level set in advance may be performed. It is only necessary to obtain the liquid surface level of the anode liquid in the tank 50, for example, based on detection results of the liquid surface level sensor 81a. It is only necessary to obtain the liquid surface level of the cathode liquid in the tank 51, for example, based on detection results of the liquid surface level sensor 81b.
While a specific value of the “predetermined level” of the anode liquid in the tank 50 is not particularly limited, for example, a value that is equal to or more than a minimal liquid surface level that can ensure filling the anode chambers 11 with the anode liquid, and circulating the anode liquid between the tank 50 and the anode chambers 11 can be used.
Similarly, while a specific value of the “predetermined level” of the cathode liquid in the tank 51 is not particularly limited, for example, a value that is equal to or more than a minimum liquid surface level that can ensure filling the cathode chamber 12 with the cathode liquid, and circulating the cathode liquid between the tank 51 and the cathode chamber 12 can be used. The “predetermined level” as a reference value for determining a liquid surface level of the anode liquid in the tank 50, and the “predetermined level” as a reference value for determining a liquid surface level of the cathode liquid in the tank 51 may have the same values or different values.
In a case where the liquid surface level of the anode liquid accumulated in the tank 50 is less than the predetermined level, it is preferable to perform the “anode liquid replenishing step” of replenishing the anode liquid into the tank 50 such that the liquid surface level of the anode liquid accumulated in the tank 50 becomes equal to or more than the predetermined level. In a case where the liquid surface level of the cathode liquid accumulated in the tank 51 is less than the predetermined level, it is preferable to perform the “cathode liquid replenishing step” of replenishing the cathode liquid into the tank 51 such that the liquid surface level of the cathode liquid accumulated in the tank 51 becomes equal to or more than the predetermined level.
Specifically, in the anode liquid surface level determining step according to step S10b described above, in a case where the liquid surface level of the anode liquid accumulated in the tank 50 is not determined to be equal to or more than the predetermined level (when the liquid surface level of the anode liquid is less than the predetermined level), in the anode liquid replenishing step according to step S10c, the anode liquid is supplied from the anode liquid supply device 57a, and the valve 751 is set in the valve-opening state. Accordingly, the anode liquid supplied from the anode liquid supply device 57a flows through the flow passage 70g1 and is replenished into the tank 50. This process is performed until the liquid surface level of the anode liquid accumulated in the tank 50 becomes equal to or more than the predetermined level.
Similarly, in the cathode liquid surface level determining step according to step S10b described above, in a case where the liquid surface level of the cathode liquid accumulated in the tank 51 is not determined to be equal to or more than the predetermined level (when the liquid surface level of the cathode liquid is less than the predetermined level), in the cathode liquid replenishing step according to step S10c, the cathode liquid is supplied from the cathode liquid supply device 57b, and the valve 75m is set in the valve-opening state. Accordingly, the cathode liquid supplied from the cathode liquid supply device 57b flows through the flow passage 70g2, and is replenished into the tank 51. This process is performed until the liquid surface level of the cathode liquid accumulated in the tank 51 becomes equal to or more than the predetermined level.
As a result of the determining in the step S10b, in a case where the liquid surface level of the cathode liquid accumulated in the tank 51 is equal to or more than the predetermined level, it is preferred to perform the “cathode bypass circulating step” of returning the cathode liquid accumulated in the tank 51 to the tank 51 after having caused the cathode liquid to flow bypassing the cathode chamber 12. Step S10d according to this embodiment is performed at least before step S10f described later (in
Specifically, in step S10d, the pump 52b is driven while the valve 75j is set in the valve-opening state, and the other valves are set in the valve-closed state. The flow passage switch valves 77a, 77b, 77c, 77d are switched such that the flow passages 70c1, 70c2, 70c3, 70c4 and the flow passages 70e1, 70e2, 70e3, 70e4 respectively communicate with one another.
Accordingly, the cathode liquid accumulated in the tank 51 flows through the flow passage 70c, and flows through the temperature controller 53b and the filter 54. Subsequently, the cathode liquid that has flowed through the filter 54, flows through the flow passages 70e1, 70e2, 70e3, 70e4 after flowing through the flow passages 70c1, 70c2, 70c3, 70c4 (that is, bypassing the cathode chamber 12), and returns to the tank 51. Step S10d according to this embodiment is performed for a predetermined time period set in advance.
The flow passages 70c, 70c1, 70c2, 70c3, 70c4, 70e1, 70e2, 70e3, 70e4 are examples of a “cathode liquid bypass flow passage” for returning the cathode liquid accumulated in the tank 51 to the tank 51 after the cathode liquid is caused to flow bypassing the cathode chambers 12.
In step S10d, the temperature controller 53b may adjust the temperature of the cathode liquid flowing through the flow passage within a predetermined temperature range. While a specific value of the temperature range is not particularly limited, it may be, for example, a range of 30° C. or more to 70° C. or less, more specifically, 40° C. or more to 60° C. or less.
According to this embodiment, an amount of gas bubbles included in the cathode liquid can be reduced while the cathode liquid flows in the cathode bypass circulating step according to step S10d. Accordingly, the amount of gas bubbles included in the cathode liquid supplied to the cathode chambers 12 can be reduced in the circulation of the cathode liquid between the tank 51 and the cathode chamber 12 according to step S10f described later that is performed later. Accordingly, for example, a large amount of gas bubbles attaching to the ionically resistive element 14 can be suppressed.
Subsequently, in Step S10e, an “anode liquid circulating step” of circulating the anode liquid between the tank 50 and the anode chambers 11 is performed. Accordingly, the anode chambers 11 can be filled with the anode liquid.
Specifically, in step S10e, the pump 52a is driven, while the valves 75a, 75b, 75c, 75d, 75e, 75f, 75g, 75h, 75i are set in the valve-opening state, and the other valves are set in the valve-closed state. Accordingly, the anode liquid in the tank 50 flows through the flow passages 70a1, 70a2, 70a3, 70a4 after flowing through the flow passage 70a and the temperature controller 53a, and flows into the respective anode chambers 11. The anode liquid that has flowed through the anode chambers 11 flows through the flow passages 70b1, 70b2, 70b3, 70b4, and returns to the tank 50.
Step S10e is performed at least after step S10a is terminated. Specifically, step S10e according to this embodiment is performed in a case where step S10a is terminated and the liquid surface level of the anode liquid accumulated in the tank 50 is determined to be equal to or more than the predetermined level in step S10b, and more specifically, performed after step S10d.
In step S10e, the temperature controller 53a may adjust the temperature of the anode liquid flowing from the tank 50 toward the anode chambers 11 within a predetermined temperature range. While a specific value of the temperature range is not particularly limited, for example, it may be a range of 30° C. or more to 70° C. or less, more specifically, 40° C. or more to 60° C. or less. With this configuration, the temperature of the anode liquid flowing from the tank 50 toward the anode chambers 11 can be set early within the predetermined temperature range.
After step S10a is terminated (after having returned the cathode liquid remaining in the cathode chamber 12 to the tank 51), and the anode liquid circulating step according to step S10e is started, in step S10f, the “cathode liquid circulating step” of circulating the cathode liquid between the tank 51 and the cathode chamber 12 is performed. Accordingly, the cathode chamber 12 is filled with the cathode liquid.
Specifically, in step S10f, the pump 52b is driven while the valve 75j is set in the valve-opening state, the other valves are set in the valve-closed state, and the flow passage switch valves 77a, 77b, 77c, 77d are switched so as to let the cathode liquid that has flowed through the flow passage 70c1, 70c2, 70c3, 70c4 flow into the cathode chamber 12.
Accordingly, the cathode liquid accumulated in the tank 51 flows through the flow passage 70c, and flows through the temperature controller 53b and the filter 54. The cathode liquid that has flowed through the filter 54 flows into the respective cathode chambers 12 after flowing through the flow passages 70c1, 70c2, 70c3, and 70c4. The cathode liquid that has flowed through the cathode chambers 12 (specifically, the cathode liquid overflowed from the cathode chambers 12 and has flowed into the overflow tanks 19) flows through the flow passages 70d1, 70d2, 70d3, 70d4, and returns to the tank 51.
In step S10f, the temperature controller 53b may adjust the temperature of the cathode liquid flowing from the tank 51 toward the cathode chambers 12. While a specific value of the temperature range is not particularly limited, for example, may be a range of 30° C. or more to 70° C. or less, more specifically, a range of 40° C. or more to 60° C. or less. With this configuration, the temperature of the cathode liquid flowing from the tank 51 toward the cathode chambers 12 can be set early within the predetermined temperature range.
It is only necessary that step S10f is started after step S10e is started, and for example, step S10e may be continued to be performed during performance of step S10f. In other words, performance of the cathode liquid circulating step according to step S10fmay be started while the anode liquid circulating step according to step S10e is started and performed, and subsequently, the anode liquid circulating step and the cathode liquid circulating step may be performed together.
Step S10f is preferred to be started after step S10e is started and the anode chambers 11 are filled with the anode liquid. Specifically, in this case, step S10f may be started after a predetermined time set in advance has passed since the start of step S10e. As the predetermined time, it is only necessary, for example, to obtain a time period sufficient for the anode chambers 11 to be filled with the anode liquid, and use the time period thus obtained.
For example, during performance of step S10f, the plating additive may be replenished in the tank 51 (referred to as an “additive replenishing step”). Specifically, in the additive replenishing step, a supply of the plating additive to the additive supply device 57c is started while the valve 75n is controlled to be set in the valve-opening state. Accordingly, the plating additive supplied from the additive supply device 57c flows through the flow passage 70g3 and is replenished into the tank 51.
While performing step S10f, for example, in addition to the additive replenishing step described above, or instead of the additive replenishing step, metal ions may be replenished into the tank 51 (this is referred to as a “metal ion replenishing step”). Specifically, in the metal ion replenishing step, a supply of a solution including metal ions to the metal ion supply device 57d is started while the valve 75o is controlled to be set in the valve-opening state. Accordingly, the solution including metal ions supplied from the metal ion supply device 57d flows through the flow passage 70g4 and is replenished into the tank 51.
With this embodiment as described above, in the chemical liquid preparation process according to step S10, the circulation of the anode liquid between the tank 50 and the anode chambers 11 (anode liquid circulating step) is started before the circulation of the cathode liquid between the tank 51 and the cathode chambers 12 (cathode liquid circulating step). Therefore, a pressure increase in the anode chambers 11 can be started before a pressure increase in the cathode chambers 12. Accordingly, for example, the cathode liquid circulating step is started before the anode liquid circulating step, and thus compared with a case where the pressure increase in the cathode chambers 12 is started before the pressure increase in the anode chambers 11, the downward deformation of the membrane 40 arranged in the inside of the plating tank 10 by the pressure in the cathode chamber 12 can be suppressed.
While the embodiments of the present invention have been described in detail above, the present invention is not limited to such specific embodiments, and further various kinds of variants and modifications are possible within the scope of the present invention described in the claims.
10 . . . plating tank
11 . . . anode chamber
12 . . . cathode chamber
13 . . . anode
40 . . . membrane
50 . . . tank (anode liquid tank)
51 . . . tank (cathode liquid tank)
52
a,
52
b . . . pump
53
a . . . temperature controller
53
b . . . temperature controller (second temperature controller)
54 . . . filter
57
a . . . anode liquid supply device
57
b . . . cathode liquid supply device
70
a to 70g4 . . . flow passage
75
a to 75o . . . valve
77
a to 77d . . . flow passage switch valve
400 . . . plating module
1000 . . . plating apparatus
Wf . . . substrate
Ps . . . plating solution (anode liquid, cathode liquid)
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2021/046934 | 12/20/2021 | WO |
