Patent Application
20080035898
The manufacturing method of a phosphor according to the present invention is characterized in that a metal organic compound solution for forming a phosphor is applied on a support, and a film is irradiated with an ultraviolet beam during the subsequent drying process, calcination process and baking process. A laser beam may be used as the ultraviolet radiation in the present invention.
Depending on the objective, the irradiation process may be performed during a prescribed process, or before or after the respective processes. Further, it is also possible to spin coat the metal organic compound solution on a substrate, dry the substrate for solvent elimination in a thermostatic bath at 130° C., thereafter mount the sample on a sample holder in a laser chamber, and perform laser irradiation at room temperature.
As a result of irradiating laser on a film applied with a metal organic compound and thereafter dried and a film at the initial stage of baking, and thereafter performing appropriate thermal treatment to these laser irradiated films, for instance, the following effects were confirmed in the case of preparing a Y2O3 film.
After the process of applying and drying a metal organic compound solution for preparing a Y2O3 film on a substrate, by irradiating ultraviolet radiation (laser, lamp light) during the calcination processing of thermally decomposing the organic constituent in the metal organic compound, it has been discovered that crystallization is promoted at a low temperature.
With conventional thermal MOD process, as shown in
Specific examples of the present invention are now explained in detail below, but the present invention is not limited by these examples in any way.
A quartz substrate and a non-alkali glass substrate were used as the substrate for the Examples in the present invention, and a solution obtained by mixing an europium 2-ethylhexanoate solution to an yttrium 2-ethylhexanoate solution was used as the starting material solution. KrF excimer laser, ArF excimer laser, and XeCl excimer laser were used for the irradiation of ultraviolet radiation.
10 mol % of a europium 2-ethylhexanoate solution was added to a yttrium 2-ethylhexanoate solution to prepare a mixed solution (YI).
The YI solution was spin coated on a quartz substrate at 3000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 400° C. and a film was irradiated with the pulsed laser of 193 nm at 100 pulses and at a reputation rate of 1 Hz in the atmosphere with a fluence of 100 mJ/cm2. The prepared Y2O3:Eu film having a film thickness of roughly 200 nm showed high luminescence intensity based on ultraviolet excitation only at the irradiated portion.
When the film was irradiated with ArF laser with a fluence of 150 mJ/cm2 in Example 1, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.
When the film was irradiated with ArF laser with a fluence of 200 mJ/cm2 in Example 1, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.
When the reputation rate was set to 10 Hz in Example 1, after 10 seconds of laser irradiation, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.
When the reputation rate was set to 50 Hz in Example 1, after 2 seconds of laser irradiation, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.
When the quartz substrate was replaced with an ITO/glass substrate (ITO coated on a glass substrate) in Example 1, a crystallized Y2O3 film was obtained at the irradiated portion. Further, only the irradiated part showed high luminescence intensity based on ultraviolet excitation.
When the quartz substrate was replaced with a non-alkali glass substrate in Example 1, only the irradiated part showed high luminescence intensity based on ultraviolet excitation,
When the wavelength of the laser beam was set to 248 nm in Example 1, crystallization reaction did not occur. Further, the luminescence intensity decreased by a factor of only ¼ in comparison with the irradiated part of the film with the ArF laser as mentioned in Example 1.
When the wavelength of the laser beam was set to 308 nm in Example 1, crystallization reaction did not occur. Further, the luminescence intensity decreased by a factor of only ¼ in comparison with the irradiated part of the film with the ArF laser as mentioned in Example 1.
When laser irradiation was not performed in Example 1, the luminescence intensity decreased by a factor of only ¼ in comparison with the irradiated part of the film with the ArF laser as mentioned in Example 1.
When the heating temperature was set to 200° C. in Example 1, the luminescence intensity decreased by a factor of only ¼ in comparison with the irradiated part of the film with the ArF laser as mentioned in
The YI solution was spin coated on a quartz substrate at 3000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate was heated at 750° C. for 60 minutes. As a result, as shown in the drawings, although the Y2O3 film was crystallized, the luminescence intensity decreased by a factor of only ¼ in comparison with the irradiated part of the film with the ArF laser as mentioned in Example 1.
The YI solution was spin coated on non-alkali glass at 3000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. As a result, the luminescence intensity decreased by a factor of only ¼ in comparison with the irradiated part of the film with the ArF laser as mentioned in Example 1.
The YI solution was spin coated on an ITO/quartz substrate at 3000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. As a result, the luminescence intensity decreased by a factor of only ¼ in comparison with the irradiated part of the film with the ArF laser as mentioned in Example 1.
The YI solution was spin coated on quartz at 3000 rpm for 10 seconds, the film was irradiated with ArF laser at 3000 pulses and at a reputation rate of 10 Hz at room temperature with a fluence of 20 mJ/cm2, and thereafter the film was irradiated by ArF laser 100 pulses and at a reputation rate of 1 Hz with a fluence of 100 mJ/cm2. Thereby, a crystalline Y2O3 film was obtained. Only the irradiated portion of the film emitted light.
The YI solution was spin coated on an ITO substrate at 3000 rpm for 10 seconds, the film was irradiated with ArF laser at 3000 pulses and 10 Hz at room temperature with a fluence of 20 mJ/cm2, and thereafter the film was irradiated with ArF laser at a reputation rate of 1 Hz for 100 pulses with a fluence of 60 mJ/cm2. Thereby, a crystalline Y2O3 film was obtained, Only the irradiated part of the film emitted light.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2006-219834 | Aug 2006 | JP | national |
