Heating of the deposition chamber, the substrate or the material to be evaporated

Industry

CPC
C30B23/06

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/06Heating of the deposition chamber, the substrate or the material to be evaporated

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Fabrication methods
- Patent number 12,171,148
- Issue date Dec 17, 2024
- Microsoft Technology Licensing, LLC
- Kevin Van Hoogdalem
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for simultaneously manufacturing more than one single crysta...
- Patent number 12,157,955
- Issue date Dec 3, 2024
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,116,696
- Issue date Oct 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki Takaoka
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
In-situ film growth rate monitoring apparatus, systems, and methods...
- Patent number 12,077,880
- Issue date Sep 3, 2024
- Applied Materials, Inc.
- Zhepeng Cong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase transport systems for depositing perovskite semiconductors
- Patent number 12,046,467
- Issue date Jul 23, 2024
- Swift Solar Inc.
- Kevin Alexander Bush
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 12,009,206
- Issue date Jun 11, 2024
- National University Corporation Nagoya University
- Shugo Nitta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epi-growth apparatus of separate chamber type
- Patent number 12,000,061
- Issue date Jun 4, 2024
- T.O.S Co., Ltd.
- Bum Ho Choi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of silicon carbide wafer and semiconductor str...
- Patent number 11,987,902
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transparent conductive oxide thin film and use thereof
- Patent number 11,982,017
- Issue date May 14, 2024
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sc...
- Ruyi Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Superconductor-semiconductor fabrication
- Patent number 11,974,509
- Issue date Apr 30, 2024
- Microsoft Technology Licensing, LLC
- Peter Krogstrup Jeppesen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
SiC single crystal growth crucible, SiC single crystal manufacturin...
- Patent number 11,946,156
- Issue date Apr 2, 2024
- Resonac Corporation
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of synthesizing molybdenum oxychloride by reacting molybdenu...
- Patent number 11,939,231
- Issue date Mar 26, 2024
- JX Metals Corporation
- Hideyuki Takahashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Molecular-beam epitaxy system comprising an infrared radiation emit...
- Patent number 11,926,925
- Issue date Mar 12, 2024
- The Johns Hopkins University
- David B. Shrekenhamer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for crystal growth by replacing a sublimated target source...
- Patent number 11,926,922
- Issue date Mar 12, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,913,136
- Issue date Feb 27, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Large diameter silicon carbide single crystals and apparatus and me...
- Patent number 11,905,618
- Issue date Feb 20, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for preparing a monolayer or few-layer crystalline black ph...
- Patent number 11,885,039
- Issue date Jan 30, 2024
- The Hong Kong Polytechnic University
- Jianhua Hao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal epitaxial layer having a rhombohedral lattice
- Patent number 11,885,040
- Issue date Jan 30, 2024
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Hyun Jung Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and methods for alignment of a susceptor
- Patent number 11,859,307
- Issue date Jan 2, 2024
- Applied Materials, Inc.
- Edric Tong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of silicon carbide ingot
- Patent number 11,859,306
- Issue date Jan 2, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for growing high-purity semi-insulating silico...
- Patent number 11,851,784
- Issue date Dec 26, 2023
- Fujian Beidian Material Technologies Co., Ltd.
- Huarong Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large, UV-transparent aluminum nitride single crystals
- Patent number 11,828,002
- Issue date Nov 28, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing silicon ca...
- Patent number 11,821,105
- Issue date Nov 21, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growth crucible and single crystal growth method
- Patent number 11,814,749
- Issue date Nov 14, 2023
- Resonac Corporation
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a silicon carbide ingot comprising moving a...
- Patent number 11,795,572
- Issue date Oct 24, 2023
- SENIC INC.
- Byung Kyu Jang
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PEROVSKITE OXIDE THIN FILM USING A SELECTIVE A-SITE ATOMIC GRADIENT...
- Publication number 20240417273
- Publication date Dec 19, 2024
- POSTECH Research and Business Development Foundation
- Daesu LEE
- C01 - INORGANIC CHEMISTRY
Information Patent Application
IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...
- Publication number 20240410078
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Zhepeng CONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20240401235
- Publication date Dec 5, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNE...
- Publication number 20240376633
- Publication date Nov 14, 2024
- PVA TePla AG
- Michael SCHÖLER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...
- Publication number 20240328030
- Publication date Oct 3, 2024
- Hexatech, Inc.
- Rafael Dalmau
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System And Method Of Growing At Least One Single Crystal
- Publication number 20240309546
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Philipp SCHUH
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION OF SHAPED CRYSTALLINE LAYERS
- Publication number 20240309549
- Publication date Sep 19, 2024
- Ivan TIMOKHIN
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System and Method of Growing at Least One Single Crysta...
- Publication number 20240309545
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Ralf MÜLLER
- C30 - CRYSTAL GROWTH
Information Patent Application
LASER PROCESSING SYSTEM INTEGRATED WITH MBE DEVICE
- Publication number 20240309544
- Publication date Sep 19, 2024
- Wuhan University
- Fang Dong
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS
- Publication number 20240295047
- Publication date Sep 5, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING SILICON CARBIDE INGOT
- Publication number 20240271322
- Publication date Aug 15, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263346
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL EXPANSION APPARATUS, SILICON CARBIDE CRYSTA...
- Publication number 20240263345
- Publication date Aug 8, 2024
- Winsheng Material Technology (WMT) Co., Ltd.
- Chi-Hang Hung
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263347
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
- Publication number 20240254621
- Publication date Aug 1, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20240254656
- Publication date Aug 1, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki TAKAOKA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Hierarchical Inverted/Normal Cobalt Ferrite Nano-Chessboard
- Publication number 20240240356
- Publication date Jul 18, 2024
- MORGAN STATE UNIVERSITY
- Abdellah Lisfi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND APPARATUSES FOR CRYSTAL GROWTH
- Publication number 20240209543
- Publication date Jun 27, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYER TRANSFER PROCESS
- Publication number 20240188444
- Publication date Jun 6, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Florian DUPONT
- C30 - CRYSTAL GROWTH
Information Patent Application
MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
- Publication number 20240158912
- Publication date May 16, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...
- Publication number 20240150931
- Publication date May 9, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping XU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE
- Publication number 20240150930
- Publication date May 9, 2024
- KISELKARBID I STOCKHOLM AB
- Lin DONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE
- Publication number 20240150929
- Publication date May 9, 2024
- KISELKARBID I STOCKHOLM AB
- Li DONG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS
- Publication number 20240110307
- Publication date Apr 4, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...
- Publication number 20240110275
- Publication date Apr 4, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Wolfgang BRAUN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240093408
- Publication date Mar 21, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS
- Publication number 20240084442
- Publication date Mar 14, 2024
- University of Ulsan Foundation for Industry Cooperation
- Eun Jung PARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL
- Publication number 20240068125
- Publication date Feb 29, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE
- Publication number 20240052520
- Publication date Feb 15, 2024
- KISELKARBID I STOCKHOLM AB
- Johan Peter EKMAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Heating of the deposition chamber, the substrate or the material to be evaporated

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fabrication methods

Method for simultaneously manufacturing more than one single crysta...

Silicon carbide substrate

In-situ film growth rate monitoring apparatus, systems, and methods...

Method for manufacturing a SiC substrate by simultaneously forming...

Large diameter silicon carbide wafers

Vapor phase transport systems for depositing perovskite semiconductors

Vapor phase epitaxial growth device

Epi-growth apparatus of separate chamber type

Manufacturing method of silicon carbide wafer and semiconductor str...

Transparent conductive oxide thin film and use thereof

Superconductor-semiconductor fabrication

SiC single crystal growth crucible, SiC single crystal manufacturin...

Impurity control during formation of aluminum nitride crystals and...

Method of synthesizing molybdenum oxychloride by reacting molybdenu...

SiC single crystal manufacturing method, SiC single crystal manufac...

Molecular-beam epitaxy system comprising an infrared radiation emit...

Methods for crystal growth by replacing a sublimated target source...

Thermal control for formation and processing of aluminum nitride

Large diameter silicon carbide single crystals and apparatus and me...

Methods for preparing a monolayer or few-layer crystalline black ph...

Single crystal epitaxial layer having a rhombohedral lattice

Manufacturing method for a group-III nitride crystal that requires...

Apparatus and methods for alignment of a susceptor

Manufacturing method of silicon carbide ingot

Apparatus and method for growing high-purity semi-insulating silico...

Large, UV-transparent aluminum nitride single crystals

Silicon carbide seed crystal and method of manufacturing silicon ca...

Single crystal growth crucible and single crystal growth method

Method of manufacturing a silicon carbide ingot comprising moving a...

Patents Applicationslast 30 patents

PEROVSKITE OXIDE THIN FILM USING A SELECTIVE A-SITE ATOMIC GRADIENT...

IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNE...

LARGE DIAMETER SILICON CARBIDE WAFERS

SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...

Sublimation System And Method Of Growing At Least One Single Crystal

PREPARATION OF SHAPED CRYSTALLINE LAYERS

Sublimation System and Method of Growing at Least One Single Crysta...

LASER PROCESSING SYSTEM INTEGRATED WITH MBE DEVICE

SIC SINGLE-CRYSTAL GROWTH APPARATUS

METHOD OF FABRICATING SILICON CARBIDE INGOT

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

SILICON CARBIDE CRYSTAL EXPANSION APPARATUS, SILICON CARBIDE CRYSTA...

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE

SILICON CARBIDE SUBSTRATE

Hierarchical Inverted/Normal Cobalt Ferrite Nano-Chessboard

METHODS AND APPARATUSES FOR CRYSTAL GROWTH

LAYER TRANSFER PROCESS

MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...

SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE

METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE

METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS

METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...

Method and Device for Producing a SiC Solid Material

MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS

SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL

SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE