Manufacturing method for a circuit pattern, a thin film transistor and an electronic appliance

Abstract

A circuit pattern is formed by following steps: forming a light-blocking mask over a major surface of a light-transmitting substrate, forming a first film in a first region over the substrate and the mask, forming a photocatalytic film in at least a part of the first region over the first film, changing wettability of the first film in a second region which is in the first region, being in contact with the photocatalytic film, and not overlapping the mask, by light irradiation from a back surface opposite to the major surface of the substrate, removing the photocatalytic film, and forming a composition including a pattern forming material in the second region.

Description

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1D illustrate a manufacturing method of the present invention;

FIGS. 2A to 2C illustrate a manufacturing method of the present invention;

FIGS. 3A to 3C illustrate a manufacturing method of a display device of the present invention;

FIGS. 4A to 4C illustrate a manufacturing method of a display device of the present invention;

FIGS. 5A to 5C illustrate a manufacturing method of a display device of the present invention;

FIGS. 6A to 6C illustrate a manufacturing method of a display device of the present invention;

FIGS. 7A to 7C illustrate a manufacturing method of a display device of the present invention;

FIGS. 8A to 8C illustrate a manufacturing method of a display device of the present invention;

FIGS. 9A to 9C illustrate a manufacturing method of a display device of the present invention;

FIGS. 10A to 10C illustrate a manufacturing method of a display device of the present invention;

FIGS. 11A to 11C illustrate a manufacturing method of a display device of the present invention;

FIGS. 12A to 12C illustrate a manufacturing method of a display device of the present invention;

FIGS. 13A to 13C illustrate a manufacturing method of a display device of the present invention;

FIG. 14 is a cross-sectional view illustrating a structural example of a liquid crystal display module of the present invention;

FIGS. 15A to 15C are top views of a display device of the present invention;

FIGS. 16A and 16B are top views of a display device of the present invention;

FIGS. 17A and 17B are a top view and a cross-sectional view illustrating a display panel of the present invention;

FIG. 18 is a cross-sectional view illustrating a structural example of an EL display module of the present invention;

FIGS. 19A and 19B show an electronic appliance to which the present invention is applied;

FIGS. 20A to 20D show electronic appliances to which the present invention is applied;

FIG. 21 is a cross-sectional view illustrating a structural example of an EL display module of the present invention;

FIG. 22 illustrates a structure of a droplet discharging device which can be applied to the present invention;

FIG. 23 is a graph showing an effect of a photocatalytic substance in the present invention; and

FIG. 24 is a graph showing a drain current with respect to a gate voltage of a TFT manufactured by the present invention.

Claims

1. A method for forming a circuit pattern, comprising the steps of: forming a light-blocking mask over a major surface of a light-transmitting substrate;forming a first film in a first region over the substrate and the mask;forming a photocatalytic film in at least a part of the first region over the first film;changing wettability of the first film in a second region which is in the first region, being in contact with the photocatalytic film, and not overlapping the mask, by light irradiation from a back surface opposite to the major surface of the substrate;removing the photocatalytic film; andforming a composition including a pattern forming material in the second region.

2. A method for forming a circuit pattern, comprising the steps of: forming a light-blocking mask over a major surface of a light-transmitting substrate;forming an insulating layer over the substrate and the mask;forming a first film in a first region over the insulating layer;forming a photocatalytic film in at least a part of the first region over the first film;changing wettability of the first film in a second region which is in the first region, being in contact with the photocatalytic film, and not overlapping the mask, by light irradiation from a back surface opposite to the major surface of the substrate;removing the photocatalytic film; andforming a composition including a pattern forming material in the second region.

3. The method for forming the circuit pattern according to claim 1, wherein wettability with respect to the composition of the second region is higher than that of the first region.

4. The method for forming the circuit pattern according to claim 2, wherein wettability with respect to the composition of the second region is higher than that of the first region.

5. The method for forming the circuit pattern according to claim 1, wherein the photocatalytic film comprises zinc oxide.

6. The method for forming the circuit pattern according to claim 2, wherein the photocatalytic film comprises zinc oxide.

7. The method for forming the circuit pattern according to claim 1, wherein the first film comprises alkylsilane or fluoroalkylsilane.

8. The method for forming the circuit pattern according to claim 2, wherein the first film comprises alkylsilane or fluoroalkylsilane.

9. The method for forming the circuit pattern according to claim 1, wherein the light has a wavelength of 380 nm or less.

10. The method for forming the circuit pattern according to claim 2, wherein the light has a wavelength of 380 nm or less.

11. A method for forming a thin film transistor, comprising the steps of: forming a light-blocking first conductive layer over a major surface of a light-transmitting substrate;forming an insulating layer over the substrate and the first conductive layer;forming a first film in a first region over the insulating layer;forming a photocatalytic film in at least a part of the first region over the first film;changing wettability of the first film in a second region which is in the first region, being in contact with the photocatalytic film, and not overlapping the first conductive layer, by light irradiation from a back surface opposite to the major surface of the substrate;removing the photocatalytic film; andforming a composition including a second conductive layer forming material in the second region.

12. The method for forming the thin film transistor according to claim 11, wherein wettability with respect to the composition of the second region is higher than that of the first region.

13. The method for forming the thin film transistor according to claim 11, wherein the photocatalytic film comprises zinc oxide.

14. The method for forming the thin film transistor according to claim 11, wherein the first film comprises alkylsilane or fluoroalkylsilane.

15. The method for forming the thin film transistor according to claim 11, wherein the light has a wavelength of 380 nm or less.

16. The method for forming the thin film transistor according to claim 11, wherein the first conductive layer is a gate electrode layer and the second conductive layer is a source electrode or drain electrode layer.

17. A method for forming an electronic appliance including the thin film transistor according to claim 11, further comprising a step of incorporating the thin film transistor into the electronic appliance.

18. The method for forming the electronic appliance according to claim 17, wherein the electronic appliance is any one of a video camera, a digital camera, a projector, a head mounted display, a car navigation system, a car stereo, a personal computer, a game machine, a portable information terminal, or an image reproducing device provided with a recording medium.