1. Field of the Invention
The present invention relates generally to the manufacturing method and device of an antistatic flip chip substrate that can be connected to several chips, and more particularly to those which allow several conductors of lighting panel to be connected to the flip chip substrate.
2. Description of Related Art
The capacitor structure of typical CIC flip chip semiconductor can be only linked to a LED semiconductor, so a single LED semiconductor will require for a CIC flip chip substrate, and so on, thus resulting in higher cost and bigger space.
The present invention provides the manufacturing method and device of an antistatic flip chip substrate that can be connected to several chips. As some steps are taken to provide graphic representation of semiconductor of CIC flip chip substrate, a CIC flip chip substrate can be linked to several LED semiconductor structures, thus leading to cost-effective and space-saving advantages.
The features and the advantages of the present invention will be more readily understood upon a thoughtful deliberation of the following detailed description of a preferred embodiment of the present invention with reference to the accompanying drawings.
The present invention provides the manufacturing method and device of an antistatic flip chip substrate that can be connected to several chips.
Referring to FIGS. 1□4, the manufacturing steps are as follows:
Step 1 (S1): this step is to manufacture several LED semiconductors, each of which permits a substrate 10 to be assembled with a nucleation layer 11, a conductive buffer layer 12, a positive layer 13, an upper confinement layer 131, a lower confinement layer 132, a contact layer 14, a first electrode 15 and a second electrode 16.
Of which, the first electrode 15 can be silver-coated as a reflective layer, so that LED semiconductor has better luminescence effect.
Step 2 (S2): this step is to manufacturer a CIC flip chip substrate 20, which comprises a semiconductor layer, an insulating layer and a semiconductor substrate.
The semiconductor substrate is made of highly heat-dissipating materials (incl. aluminum nitride), which feature high heat-dissipation and cost-effectiveness.
The insulating layer is made of dielectric material, superdielectric material and over-voltage breakdown material, which contain silicon dioxide, silicon nitride, hafnium dioxide, zirconium dioxide and rare-earth oxide.
Step 3 (S3): the semiconductor layer of CIC flip chip substrate 20 is formed a graphic representation 24 (shown in
Step 4 (S4): the first electrode 15 and second electrode 16 of every LED semiconductor are electrically linked to the first electrode 21 and second electrode 22 of CIC flip chip substrate 20 through solder beads 23.
The light emitted from LED is not uniform, e.g. LED street lamp doesn't irradiate laterally. So, when the semiconductor layer of CIC flip chip substrate 20 is formed the graphic representation 24, the graphic representation 24 is configured in such a manner that several LEDs are linked to CIC flip chip substrate 20 to form a desirable optical field, which can also be achieved through different patterns of embedded flip chips on the substrate.
Some reflective cavities are formed on the CIC flip chip substrate 20, each of which could accommodate at least a LED; when LED is highlighted, light-gathering effect could be achieved through this cavity, along with longer emitting distance and brighter effect.
When a forward bias is applied between V+ and V− under normal operation, a current flows through the semiconductor from the first electrode 15, and the generated light 30 is discharged from the substrate 10; in the event of occurrence of abnormal voltage or electrostatic charge, the discharge path is turned to CIC flip chip substrate 20, without passing through the semiconductor. In such case, the protective system will be activated at 200V to guarantee that the human body can withstand voltage up to 8 KV.
The present invention could protect LED semiconductor against static discharge damage. Moreover, some steps are taken to represent graphically the semiconductor layer of CIC flip chip substrate 20, so a single CIC flip chip substrate 20 could be connected to several LED semiconductors.
Owing to high degree of heat generated from several LED semiconductors of the present invention, the CIC flip chip substrate 20 must have a strong heat-dissipating capacity, so that several LED semiconductors can be linked to a single CIC flip chip substrate 20; thus, the semiconductor substrate of CIC flip chip substrate 20 may be made of silicon or aluminum nitride, so that LED semiconductors could provide desirable heat-dissipating effect at an attractive price.
The present invention could provide another antistatic flip chip substrate that can be connected to several chips. Referring to
at least a LED semiconductor, each of which permits a substrate 10 to be assembled with a nucleation layer 11, a conductive buffer layer 12, a positive layer 13, an upper confinement layer 131, a lower confinement layer 132, a contact layer 14, a first electrode 15 and a second electrode 16;
of which, the first electrode 15 can be silver-coated as a reflective layer.
a CIC flip chip substrate 20, which comprises a semiconductor layer, an insulating layer and a semiconductor substrate; the semiconductor layer of CIC flip chip substrate 20 is formed a graphic representation 24 (shown in
The semiconductor substrate on CIC flip chip substrate 20 is made of highly heat-dissipating materials (incl. aluminum nitride).
The insulating layer CIC flip chip substrate 20 is made of dielectric material, superdielectric material and over-voltage breakdown material, which contain silicon dioxide, silicon nitride, hafnium dioxide, zirconium dioxide and rare-earth oxide.
Some reflective cavities are formed on the CIC flip chip substrate 20, each of which could accommodate at least a LED; when LED is highlighted, light-gathering effect could be achieved through this cavity, along with longer emitting distance and brighter effect.