Claims
- 1. A method of forming a micro pipe on a substrate, comprising the steps of:forming a trench in a first layer on a surface of said substrate; forming a second layer over said first layer, said trench having a height which is larger than a width thereof so that said second layer lines sidewalls and bottom of said trench and covers a top of said trench to form said micro pipe within said trench; and forming a via hole in said second layer that reaches said micro pipe.
- 2. The method of claim 1, wherein said trench forming step is reactive ion etching.
- 3. The method of claim 1, wherein said second layer forming step is one of chemical vapor deposition and plasma enhanced chemical vapor deposition.
- 4. The method of claim 1 further comprising forming a third layer on inner surfaces of said micro pipe.
- 5. The method of claim 4, wherein said second layer forming step is one of chemical vapor deposition and plasma enhanced chemical vapor deposition.
- 6. The method of claim 1 further comprising planarizing said second layer.
- 7. The method of claim 6, wherein said second layer planarizing step is one of chemical mechanical polish and reactive ion etching.
- 8. The method of claim 1 further comprising the steps of:forming a third layer on said second layer; forming another trench in said third layer; and forming a fourth layer on said third layer, said fourth layer having another micro pipe in said other trench.
- 9. The method of claim 1 further comprising the steps of:forming another trench in said second layer; and forming a third layer on said second layer so as to form another micro pipe in said other trench.
- 10. The method of claim 8 further comprising forming in said fourth layer a via hole that reaches said other micro pipe.
- 11. The method of claim 8 further comprising forming in said second, third, and fourth layers a via hole that reaches said micro pipes in said second and fourth layers.
- 12. The method of claim 8, wherein said other micro pipe forming steps forms said other micro pipe to be perpendicular to said micro pipe in said second layer.
RELATED APPLICATIONS
This application is a divisional of U.S. application Ser. No. 08/808,927, filed Feb. 28, 1997, now U.S. Pat. No. 6,031,286.
US Referenced Citations (15)
Foreign Referenced Citations (1)
Number |
Date |
Country |
04333571A |
Nov 1992 |
JP |
Non-Patent Literature Citations (1)
Entry |
S. Wolf, Silicon Processing for the VLSI Era, (Lattice Press, California, 1990), vol. 2, pp. 211, 220-229, 238-239. |