This application claims benefit of the filing date of Chinese Patent Application No. 201710742464.3 filed on Aug. 25, 2017, the disclosure of which is hereby incorporated by reference.
This invention relates to display technology, and more particularly, to a mask strip, a method of fabricating the mask strip, and a mask plate.
At present, the organic light-emitting diode (OLED has gradually become a mainstream of display device due to its excellent performance such as low power consumption, high color saturation, wide viewing angle, thin thickness, flexibility and the like. During mass production of OLEDs, a fine metal mask (FMM) is usually used to form an organic light-emitting layer in each pixel unit by vapor deposition technology.
Accordingly, one example of the present disclosure is a mask strip. The mask strip may comprise a plurality of mask units in a first direction. Each of the mask units may comprise a mask region and a non-mask region surrounding the mask region. The non-mask region may comprise a side region and an original stress concentration region inside the side region. Each of the mask units may further comprise a stress concentration structure. The stress concentration structure may be within a part of the side region other than the original stress concentration region. The side region may be a part of the non-mask region located within a distance smaller than or equal to a first distance to an edge of the mask strip. The original stress concentration region may be a part of the side region located within a distance smaller than or equal to a second distance to the corresponding mask region. The first direction may be a stretching direction.
The stress concentration structure may comprise a plurality of cavities. The cavities may be etching cavities or welding point cavities. In the case of welding point cavities, there may be no overlap between the welding point cavities in the stress concentration structure.
A center of each of the mask units may overlap with a center of the mask region. The stress concentration structure may be located at each of four corners of each of the mask units within the side region. The stress concentration structure may have a rectangular shape, and a length direction of the rectangular shape may be parallel to the first direction. Each of the mask units may comprise 2 or more mask regions, and the mask regions may be arranged in a direction perpendicular to the first direction.
Another example of the present disclosure is a mask plate comprising the mask strip according to one embodiment of the present disclosure.
Another example of the present disclosure is a method of fabricating a mask strip. The method may comprise forming a mask strip body, the mask strip body comprising a plurality of mask units which are arranged in a first direction, each of the mask units comprising a mask region and a non-mask region surrounding the mask region, the non-mask region comprising a side region and an original stress concentration region inside the side region, and forming a stress concentration structure within a part of the side region other than the original stress concentration region. The stress concentration structure may comprise a plurality of cavities arranged in an array mode. The cavities may be welding point cavities.
In one embodiment, forming the stress concentration structure may comprise forming the welding point cavities at positions corresponding to the cavities to be formed at a surface of the mask strip body using a welding equipment. In the step of forming the welding point cavities, an output energy of a welding head of the welding equipment may be 0.1 J to 0.2 J, and a processing time thereof may be 0.5 to 1 milliseconds. The cavities may be etching cavities, and there may be no overlap among the etching point cavities in the stress concentration structure.
In another embodiment, forming the stress concentration structure may comprise forming the etching cavities at positions corresponding to the cavities to be formed at a surface of the mask strip body using an etching liquid.
The subject matter which is regarded as the invention is particularly pointed out and distinctly claimed in the claims at the conclusion of the specification. The objects, features, and advantages of the invention are apparent from the following detailed description taken in conjunction with the accompanying drawings in which:
The present disclosure will be described in further detail with reference to the accompanying drawings and embodiments in order to provide a better understanding by those skilled in the art of the technical solutions of the present disclosure. Throughout the description of the disclosure, reference is made to
In a process of fabricating a fine metal mask, a pulling force first needs to be applied to two ends of a mask strip to stretch the mask strip. Then, the mask strip is fixed to a fixed frame. As such, the fine metal mask is obtained.
However, when a mask region on the mask strip has an irregular shape, that is, not a rectangular shape, during the process of stretching the mask strip, a side region of the mask strip can generate a large amplitude of wrinkles due to non-uniform stress distribution. When an organic light emitting layer is prepared using the fine metal mask with the mask strip, the distance between the mask region of the mask strip and a display substrate is increased, thereby influencing vapor deposition effect.
In one embodiment, the mask strip in
In one embodiment, the first preset distance can be determined based on the size of the mask strip and factors such as the shape of the mask region 3 in the mask strip. As such, a proper side region 4 can be defined.
In one embodiment, without being held to a particular theory, a process and principle of determining a value of the second preset distance are described in detail in the following with reference to the accompanying drawings.
Although a certain deviation exists between the original stress concentration region 6 defined as above and the actual stress concentration region 7 in the side region 4 via simulation, the original stress concentration region 6 can reflect actual positions having stress concentration in the side region 4 to a great extent.
The position of the stress concentration structure according to one embodiment of the present disclosure is described in detail below with reference to the accompanying drawings.
In one embodiment, as shown in
The side regions 4 are rectangular areas having a size of 42 mm×3 mm located above and below the mask region 3. The original stress concentration region 6 is the overlapping area between the side region 4 and a circular area having a radius of 21 mm with a circle center O. After the side region 4 and the original stress concentration region 6 are determined, stress concentration structure can be arranged at least in parts of the side region 4 other than the original stress concentration region 6.
In one embodiment of the present disclosure, the stress concentration structure is arranged in rectangular regions, each having a size of 10 mm×3 mm at two ends of the side region 4. The length direction of the rectangular region is parallel to the preset stretching direction. The stress concentration structure is arranged at the two ends of the side region 4, and the stress concentration structures are arranged at four corners of the mask unit 2. As such, the stress distribution within the side region can be improved. Furthermore, any undesirable effect of the stress concentration structure on a net structure (not shown) in the mask region could be avoided.
Those skilled in the art will appreciate that the situation of the mask unit shown in
Without being held to a particular theory, the principle of reducing amplitude of wrinkles in the side region 4 of a mask strip according to one embodiment of the present disclosure is described in detail below with reference to the accompanying drawings.
When using fine metal mask having mask strips according to one embodiment of the present disclosure to prepare an organic light-emitting layer, because wrinkle amplitude is reduced, the distance between the mask region 3 of the mask strip and a display substrate is reduced, thereby improving vapor deposition effect.
In one embodiment, cavity 8 may be an etching cavity or a welding point cavity. The etching cavity may be formed through a half-etching process. The welding point cavity can be formed through a spot welding process.
When a welding head is utilized to form a welding point cavity on the surface of the mask strip, if adjacent welding point cavities overlap, the mask strip may deform due to the fact that the welding points are too dense. According to one embodiment of the present disclosure, to avoid deforming mask strip in spot welding process, there is no overlap between welding point cavities in the stress concentration structure.
The above stress concentration structure comprising cavities 8 is only one embodiment of the present disclosure. The cavities 8 can achieve a stress concentration function while hardness of the mask strip is not affected. The stress concentration structure can also be of other structures such as a hole, a notch, a step etc, and are not repeated herein.
In one embodiment, the number of mask regions 3 in each mask unit 2 may be three or more. The mask regions 3 in the mask unit 2 are arranged in the direction perpendicular to the preset stretching direction. Furthermore, the shape of the mask region 3 is not limited to a circle. It may also be other regular shapes or irregular shapes. The specific situation is not described in detail herein.
A mask strip is provided according to embodiments of the present disclosure as mentioned above. The mask strip comprises a mask strip body. Stress concentration structure is arranged at least in parts of side regions of the mask strip body other than the original stress concentration region. As such, stress distribution within the side regions is more uniform when the mask strip is stretched. As a result, the amplitude of wrinkles within the side region is effectively reduced, thereby improving vapor deposition effect.
In step S1, a mask strip body is formed.
The mask strip body comprises a plurality of mask units which are arranged in a first direction, that is, a preset stretching direction. The mask unit comprises a mask region and a non-mask region surrounding the mask region. An area of the non-mask region located within a distance smaller than or equal to a first preset distance to an edge of the mask strip is a side region. An area of the side region located within a distance smaller than or equal to a second preset distance to the corresponding mask region is an original stress concentration region.
In one embodiment, the mask strip body is made of invar steel so that the mask strip body has relatively high toughness and plasticity.
In step S2, stress concentration structure is arranged at least in parts of the side regions other than the original stress concentration regions.
In one embodiment, the stress concentration structure comprises a plurality of cavities arranged in an array mode. The cavity may be a welding point cavity or an etching cavity.
In one embodiment, when the cavity is a welding point cavity, the method of forming a stress concentration structure comprises the following step: welding point cavities are formed at positions corresponding to the cavities to be formed at a surface of the mask strip body by using welding equipment. In the process of forming welding point cavities, if output energy of the welding head is too small or if the processing time is too short, the welding point cavities are difficult to form. If the output energy of the welding head is too large, or if the processing time is too long, the mask strip can be easily deformed. In a process of forming welding point cavities according to one embodiment of the present disclosure, the output energy of the welding head is 0.1 J-0.2 J. The processing time thereof is 0.5-1 milliseconds. As such, the welding point cavities may be formed on the mask strip without deforming the mask strip.
In another embodiment of the present disclosure, the welding point cavities in the stress concentration structure do not overlap, thereby effectively preventing the mask strip from being deformed to a certain degree.
In one embodiment, when the cavity is an etching cavity, the step of forming a stress concentration structure comprises the following step: etching cavities are formed in positions corresponding to the cavities to be formed at a surface of the mask strip body through etching liquid.
Another example of the present disclosure is a mask plate. The mask plate comprises a mask strip according to one embodiment of the present disclosure. The mask strip may be the mask strip in the above embodiments of the present disclosure. The specific structure can be found in the description of the embodiments mentioned above and is not repeated herein.
In one embodiment, when fabricating the mask plate, the stress concentration structure may be formed first on the mask strip body. Then, the mask strip with the stress concentration structure may be welded and fixed onto a fixed frame. In another embodiment, mask strips are first welded and fixed with the fixed frame, and then stress concentration structure is formed on the mask strip body. In one embodiment, a method for forming a stress concentration structure first and welding and fixing later is adopted.
The descriptions of the various embodiments of the present disclosure have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Number | Date | Country | Kind |
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201710742464.3 | Aug 2017 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2018/073790 | 1/23/2018 | WO | 00 |