Number | Name | Date | Kind |
---|---|---|---|
3888706 | Dingwall | Jun 1975 | |
4050965 | Ipri et al. | Sep 1977 | |
4160260 | Weitzel et al. | Jul 1979 | |
4507846 | Ohno | Apr 1985 | |
4597160 | Ipri | Jul 1986 | |
4598305 | Chiang et al. | Jul 1986 | |
4603469 | Armiento et al. | Aug 1986 | |
4628589 | Sundaresan | Dec 1986 | |
4651408 | MacElwee et al. | Mar 1987 | |
4656731 | Lam et al. | Apr 1987 | |
4753896 | Matloubian | Jun 1988 | |
4766482 | Smeltzer et al. | Aug 1988 | |
4814292 | Sasaki et al. | Mar 1989 | |
4851363 | Troxell et al. | Jul 1989 | |
4883766 | Ishida et al. | Nov 1989 |
Number | Date | Country |
---|---|---|
0077737 | Apr 1983 | EPX |
0075238 | Jun 1980 | JPX |
0116637 | Sep 1981 | JPX |
0207676 | Dec 1983 | JPX |
0125662 | Jul 1984 | JPX |
0086864 | Apr 1987 | JPX |
0114266 | May 1988 | JPX |
0128572 | May 1989 | JPX |
8808202 | Oct 1988 | WOX |
Entry |
---|
MacIver, B., j-MOS: A versatile Power Field-Effect Transistor, IEEE Elect. Dev. Lett., vol. EDl-5, No. 5, May 1984, pp. 154-158. |
Woo, D. Silicon Nitride Isolation of Phosphosilicate Glass Layer, Tech. Notes (RCA), Nov. 27, 1979, TN No. 1234, pp. 1-2. |
Ipri, A., Low-Threshold Low-Power CMOS/SOS for High-Tureg. Counter Appl., IEEE Journal of Sol State Cir., vol. SC-11, No. 2, Apr. 1976, pp. 329-336. |
Colinge, J., An SOI Voltage-Controlled Bipolar-MOS Device, IEEE Trans. on Elect. Dev., vol. EDL-34, Apr. 1987, pp. 845-849. |