Claims
- 1. An integrated sample holder for a TEM sample, comprising:a base of a semiconductor material, having a top surface, a substantially flat bottom surface area sized to engage a TEM double tilt holder, a TEM sample, extending upward from the base, having an upper surface and opposing, substantially parallel sidewalls, and a metallic layer disposed on the upper surface.
- 2. The method of claim 1, wherein the metallic layer includes platinum.
- 3. The method of claim 1, wherein the distance between the sidewalls is between 80 and 200 nanometers.
- 4. The integrated sample holder of claim 1, further comprising an elongated notch at the top surface of the base running substantially parallel to an edge of the base.
- 5. The integrated sample holder of claim 1, in which the metallic layer covers substantially the entire upper surface.
- 6. The integrated sample holder of claim 1, in which the TEM sample includes a layer of insulating material.
Parent Case Info
This application claims priority under 35 USC §119(e)(1) of provisional application No. 60/222,462 filed Aug. 3, 2000.
US Referenced Citations (6)
Provisional Applications (1)
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Number |
Date |
Country |
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60/222462 |
Aug 2000 |
US |