Claims
- 1. A magnetic recording transducer comprising at least one layer formed from a polymer precursor to ceramic.
- 2. The transducer of claim 1, wherein said layer is selected from the group consisting of underlayer, planarization layer, read gap layer, write gap layer, adhesion layer and encapsulation layer.
- 3. The transducer of claim 1, wherein said layer is an underlayer.
- 4. The transducer of claim 1, wherein said layer is a planarization layer.
- 5. The transducer of claim 1, wherein said layer is an encapsulation layer.
- 6. The transducer of claim 1, wherein said layer is a first read gap layer.
- 7. The transducer of claim 1, wherein said layer is a second read gap layer.
- 8. The transducer of claim 1, wherein said layer is a write gap layer.
- 9. The transducer of claim 1, wherein said layer is an adhesion layer.
- 10. The transducer of claim 1, wherein said polymer precursor to ceramic is represented by the formula
- 11. The transducer of claim 8, wherein R is Si.
- 12. The transducer of claim 8, wherein R is H.
- 13. A method of depositing layers in a magnetic recording transducer comprising
(i) providing a bottom surface; (ii) depositing a liquid polymer precursor layer on said bottom surface; and (iii) baking the polymer precursor layer at a temperature sufficient to convert said liquid polymer precursor to a ceramic material.
- 14. The method of claim 11, wherein the layer is selected from the group consisting of underlayer, planarization layer, read gap layer, write gap layer, adhesion layer and encapsulation layer.
- 15 The method of claim 11, wherein said layer is an underlayer.
- 16. The method of claim 11, wherein said layer is a planarization layer.
- 17. The method of claim 11, wherein said layer is an encapsulation layer.
- 18. The method of claim 11, wherein said layer is a first read gap layer.
- 19. The method of claim 11, wherein said layer is a second read gap layer.
- 20. The method of claim 11, wherein said layer is a write gap layer.
- 21. The method of claim 11, wherein said baking is carried out at a temperature of between about 20° C. to 1800° C., for a period of about 5 minutes to 60 hours.
- 22. The method of claim 11, wherein said baking is carried out at a temperature of between about 300° C. to 600° C. for a period of about 2 hours.
- 23. The method of claim 11, wherein said depositing is carried out by a method selected from the group consisting of spinning, dipping, spraying, or wiping.
- 24. The method of claim 11, wherein said depositing is carried out by spinning on said liquid polymer precursor.
- 25. The method of claim 11, wherein said depositing is carried out by spraying said liquid polymer precursor onto a spinning surface.
- 26. The method of claim 11, wherein said liquid polymer precursor is represented by the formula
- 27. The method of claim 11, wherein R is Si.
- 28. The method of claim 11, wherein R is H.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims priority under 35 USC §119 to provisional application serial No. 60/372,241, filed Apr. 12, 2002, and provisional application serial No. 60/345,511, filed Jan. 7, 2002.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60372241 |
Apr 2002 |
US |
|
60345511 |
Jan 2002 |
US |