Materials for imprint lithography

Information

  • Patent Grant
  • 8076386
  • Patent Number
    8,076,386
  • Date Filed
    Monday, February 23, 2004
    20 years ago
  • Date Issued
    Tuesday, December 13, 2011
    12 years ago
Abstract
The present invention is directed to a material for use in imprint lithography that features a composition having a viscosity associated therewith and including a surfactant, a polymerizable component, and an initiator responsive to a stimuli to vary the viscosity in response thereto, with the composition, in a liquid state, having the viscosity being lower than about 100 centipoises, a vapor pressure of less than about 20 Torr, and in a solid cured state a tensile modulus of greater than about 100 MPa, a break stress of greater than about 3 MPa and an elongation at break of greater than about 2%.
Description
TECHNICAL FIELD OF THE INVENTION

One or more embodiments of the present invention relate generally to imprint lithography. In particular, one or more embodiments of the present invention relate to materials for imprint lithography.


BACKGROUND OF THE INVENTION

Micro-fabrication involves the fabrication of very small structures, for example, and without limitation, structures having features on the order of micro-meters or smaller. One area in which micro-fabrication has had a sizeable impact is in processing of integrated circuits. As the semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, micro-fabrication becomes increasingly important since micro-fabrication provides greater process control while allowing a reduction in the minimum feature dimension of the structures formed. Other areas of development in which micro-fabrication have been employed include biotechnology, optical technology, mechanical systems and the like.


An exemplary micro-fabrication technique is disclosed in U.S. Pat. No. 6,334,960 to Willson et al. In particular, the Willson et al. patent discloses a method of imprint lithography to form a relief pattern in a structure. The method includes providing a substrate having a transfer layer (typically spin-coated), and covering the transfer layer, in turn, with a low viscosity, polymerizable (typically UV curable) fluid composition (typically in the form of droplets). The method further includes mechanically contacting an imprint template or mold having a relief structure with the polymerizable fluid composition wherein the polymerizable fluid composition fills a gap between the imprint template and the substrate and fills the relief structure of the imprint template. Next, the method includes subjecting the polymerizable fluid composition to conditions to solidify and to polymerize the same (typically, exposing the polymerizable fluid composition to UV to crosslink it), thereby forming a solidified polymeric material on the transfer layer that contains a relief structure complimentary to that of the imprint template. Next, the method includes separating the imprint template from the substrate to leave solid polymeric material on the substrate, which solid polymeric material includes a relief pattern in the form of the complimentary relief structure. Next, the solidified polymeric material and the transfer layer are subjected to an environment to selectively etch the transfer layer relative to the solidified polymeric material to form a relief image in the transfer layer.


The following issues that relate to selective adhesion of the solidified polymeric material to different surfaces are typically considered when one develops a method and/or a material useful in forming fine-feature relief patterns in the solidified polymeric material. First, the solidified polymeric material ought to adhere well to the transfer layer on the substrate, and second, it ought to be easily released from the surface of the imprint template. These issues are typically referred to as release characteristics, and if they are satisfied, the relief pattern recorded in the solidified polymeric material will not be distorted during separation of the imprint template from the substrate.


In addition to the above-described release characteristics, when designing an imprinting material for use in imprint lithography, further considerations include: (a) low viscosity, for example, and without limitation, a viscosity, at 25° C., of 5 centipoise or less, to fast spread over both the substrate and the surface of the imprint template, and to fast fill the imprinting material into the relief pattern. It is better if the viscosity is sufficiently low so that minimal pressure, for example, and without limitation, a pressure of about 2-4 psi, and no additional heating are necessary to move the imprinting material into the relief pattern on the imprint template; (b) low vapor pressure so that there is little evaporation (evaporation is a problem since the droplets of imprinting material may be on the order of 80 pico-liters, and this results in droplets having a large ratio between surface area and volume); and (c) cohesive strength of the cured imprinting material.


In light of the above, there is a need for imprinting materials for use in imprint lithography that satisfy one or more of the above-identified design criteria.


SUMMARY OF THE INVENTION

The present invention is directed to a material for use in imprint lithography that features a composition having a viscosity associated therewith and including a surfactant, a polymerizable component, and an initiator responsive to a stimuli to vary the viscosity in response thereto, with the composition, in a liquid state, having the viscosity being lower than about 100 centipoises, a vapor pressure of less than about 20 Torr, and in a solid cured state a tensile modulus of greater than about 100 MPa, a break stress of greater than about 3 MPa and an elongation at break of greater than about 2%.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a perspective view of a lithographic system useful in carrying out one or more embodiments of the present invention;



FIG. 2 is a simplified elevation view of a lithographic system shown in FIG. 1;



FIG. 3 is a simplified representation of the material from which an imprinting layer, shown in FIG. 2, is comprised before being polymerized and cross-linked;



FIG. 4 is a simplified representation of cross-linked polymer material into which the material shown in FIG. 3 is transformed after being subjected to radiation;



FIG. 5 is a simplified elevation view of a mold spaced-apart from the imprinting layer, shown in FIG. 1, after patterning and solidification/polymerization of the imprinting layer; and



FIG. 6 is a simplified elevation view of the imprint material disposed on a substrate in accordance with the present invention.





DETAILED DESCRIPTION OF THE INVENTION


FIG. 1 shows the lithographic system 10 that may be used to carry out imprint lithography in accordance with one or more embodiments of the present invention and that may utilize imprinting materials fabricated in accordance with one or more embodiments of the present invention. As shown in FIG. 1, system 10 includes a pair of spaced-apart bridge supports 12 having bridge 14 and stage support 16 extending therebetween. As further shown in FIG. 1, bridge 14 and stage support 16 are spaced-apart. Imprint head 18 is coupled to bridge 14, and extends from bridge 14 toward stage support 16. Motion stage 20 is disposed upon stage support 16 to face imprint head 18, and motion stage 20 is configured to move with respect to stage support 16 along X- and Y-axes. Radiation source 22 is coupled to system 10 to impinge actinic radiation upon motion stage 20. As further shown in FIG. 1, radiation source 22 is coupled to bridge 14, and includes power generator 23 connected to radiation source 22. An exemplary system is available under the trade name IMPRIO 100™ from Molecular Imprints, Inc. having a place of business at 1807-C Braker Lane, Suite 100, Austin, Tex. 78758. The system description for the IMPRIO 100™ is available at www.molecularimprints.com and is incorporated herein by reference.


Referring to FIGS. 1 and 2, connected to imprint head 18 is imprint template 26 having mold 28 thereon. Mold 28 includes a plurality of features defined by a plurality of spaced-apart recessions 28a and protrusions 28b. The plurality of features defines an original pattern that is to be transferred into substrate 31 positioned on motion stage 20. Substrate 31 may comprise a bare wafer or a wafer with one or more layers disposed thereon. To that end, imprint head 18 is adapted to move along the Z-axis and vary a distance “d” between mold 28 and substrate 31. In this manner, features on mold 28 may be imprinted into a conformable region of substrate 31, discussed more fully below. Radiation source 22 is located so that mold 28 is positioned between radiation source 22 and substrate 31. As a result, mold 28 is fabricated from material that allows it to be substantially transparent to the radiation produced by radiation source 22.


Referring to FIGS. 2 and 3, a conformable region, such as imprinting layer 34, is disposed on a portion of surface 32 that presents a substantially planar profile. It should be understood that the conformable region may be formed using any known technique to produce conformable material on surface 32. In accordance with one embodiment of the present invention, the conformable region consists of imprinting layer 34 being deposited as a plurality of spaced-apart discrete droplets 36 of material 36a on substrate 31, discussed more fully below. Imprinting layer 34 is formed from a low molecular weight material 36a that is concurrently polymerized and cross-linked to record the original pattern therein, defining a recorded pattern. Material 36a is shown in FIG. 4 as being polymerized and cross-linked, forming cross-linked polymer material 36c. Cross-linking is shown at points 36b.


Referring to FIGS. 2, 3 and 5, the pattern recorded in imprinting layer 34 is produced, in part, by mechanical contact with mold 28. To that end, imprint head 18 reduces the distance “d” to allow imprinting layer 34 to come into mechanical contact with mold 28, spreading droplets 36 so as to form imprinting layer 34 with a contiguous formation of material 36a over surface 32. In one embodiment, distance “d” is reduced to allow sub-portions 34a of imprinting layer 34 to ingress into and to fill recessions 28a.


To facilitate filling of recessions 28a, material 36a is provided with the requisite properties to completely fill recessions 28a while covering surface 32 with a contiguous formation of material 36a. In accordance with one embodiment of the present invention, sub-portions 34b of imprinting layer 34 in superimposition with protrusions 28b remain after the desired, usually minimum distance “d,” has been reached, leaving sub-portions 34a with a thickness t1 and sub-portions 34b with a thickness, t2. Thicknesses “t1” and “t2” may be any thickness desired, dependent upon the application.


Referring to FIGS. 2, 3 and 4, after a desired distance “d” has been reached, radiation source 22 produces actinic radiation that polymerizes and cross-links material 36a, forming polymer material 36c in which a substantial portion thereof is cross-linked. As a result, material 36a transforms to material 36c, which is a solid, forming imprinting layer 134, shown in FIG. 5. Specifically, material 36c is solidified to provide side 34c of imprinting layer 134 with a shape conforming to a shape of a surface 28c of mold 28, with imprinting layer 134 having recesses 30 (the bottom of the recesses may be referred to as a residual layer). After imprinting layer 134 is transformed to consist of material 36c, shown in FIG. 4, imprint head 18, shown in FIG. 2, is moved to increase distance “d” so that mold 28 and imprinting layer 134 are spaced-apart.


Referring to FIG. 5, additional processing may be employed to complete the patterning of substrate 31. For example, substrate 31 and imprinting layer 134 may be etched to transfer the pattern of imprinting layer 134 into substrate 31, providing a patterned surface (not shown). To facilitate etching, the material from which imprinting layer 134 is formed may be varied to define a relative etch rate with respect to substrate 31, as desired.


To that end, etching may be performed in a two-step process. S. C. Johnson, T. C. Bailey, M. D. Dickey, B. J. Smith, E. K. Kim, A. T. Jamieson, N. A. Stacey, J. G. Ekerdt, and C. G. Willson describe suitable etch processes in an article entitled “Advances in Step and Flash Imprint Lithography,” SPIE Microlithography Conference, February 2003, which is available on the Internet at www.molecularimprints.com, and is incorporated by reference herein. As set forth in the article, the first etch step, referred to as a “break-through etch,” anisotropically removes residual cross-linked material 134 to break through to an underlying transfer layer (in this respect, better etch selectivity is enabled by keeping the residual layer small). The second etch step, referred to as a “transfer etch,” uses the remaining pattern in cross-linked material 134 as an etch mask to transfer the pattern into the underlying transfer layer. In one embodiment, silicon in cross-link material 134, and the lack of silicon in the transfer layer, provides etch selectivity therebetween. In such an embodiment, the etching may be done in a LAM Research 9400SE obtained from Lam Research, Inc. of Fremont, Calif. For example, and without limitation, a halogen “breakthrough etch” may be utilized which comprises an anisotropic halogen reactive ion etch (“RIE”) rich in fluorine, i.e., wherein at least one of the precursors was a fluorine-containing material (for example, and without limitation, a combination of CHF3 and O2, where the organosilicon nature of cross-linked material 134 may call for the use of a halogen gas). Other suitable halogen compounds include, for example, and without limitation, CF4. This etch is similar to a standard SiO2 etch performed in modern integrated circuit processing. Next, an anisotropic oxygen reactive ion etch may be used to transfer the features to underlying substrate 31 wherein the remaining silicon containing features serve as an etch mask to transfer the pattern to underlying substrate 31. The “transfer etch” may be achieved, for example, and without limitation, with a standard, anisotropic, oxygen RIE processing tool. However, in general, any suitable etch process may be employed, dependent upon the etch rate desired and the underlying constituents that form substrate 31 and imprinting layer 134. Exemplary etch processes may include plasma etching, reactive ion etching, chemical wet etching and the like.


Referring to both FIGS. 1 and 2, exemplary radiation source 22 may produce ultraviolet radiation; however, any known radiation source may be employed. The selection of radiation employed to initiate the polymerization of the material in imprinting layer 34 is known to one skilled in the art and typically depends on the specific application which is desired. Furthermore, the plurality of features on mold 28 are shown as recessions 28a extending along a direction parallel to protrusions 28b that provide a cross-section of mold 28 with a shape of a battlement. However, recessions 28a and protrusions 28b may correspond to virtually any feature required to create an integrated circuit and may be as small as a few tenths of nanometers.


Referring to FIGS. 1, 2 and 5, the pattern produced by the present patterning technique may be transferred into substrate 31 to provide features having aspect ratios as great as 30:1. To that end, one embodiment of mold 28 has recessions 28a defining an aspect ratio in a range of 1:1 to 10:1. Specifically, protrusions 28b have a width W1 in a range of about 10 nm to about 5000 μm, and recessions 28a have a width W2 in a range of 10 nm to about 5000 μm. As a result, mold 28 and/or template 26, may be formed from various conventional materials, such as, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire and the like.


Referring to FIGS. 1, 2 and 3, the characteristics of material 36a are important to efficiently pattern substrate 31 in light of the deposition process employed. As mentioned above, material 36a is deposited on substrate 31 as a plurality of discrete and spaced-apart droplets 36. The combined volume of droplets 36 is such that material 36a is distributed appropriately over an area of surface 32 where imprinting layer 34 is to be formed. As a result, imprinting layer 34 is spread and patterned concurrently, with the pattern being subsequently set into imprinting layer 34 by exposure to radiation, such as ultraviolet radiation. As a result of the deposition process, it is desired that material 36a have certain characteristics to facilitate rapid and even spreading of material 36a in droplets 36 over surface 32 so that all thicknesses ti are substantially uniform and all thicknesses t2 are substantially uniform. The desirable characteristics include having a low viscosity, for example, and without limitation, in a range of about 0.5 to about 5 centipoise (cps), as well as the ability to wet surface of substrate 31 and mold 28 and to avoid subsequent pit or hole formation after polymerization. With these characteristics satisfied, imprinting layer 34 may be made sufficiently thin while avoiding formation of pits or holes in the thinner regions, such as sub-portions 34b, shown in FIG. 5. However, the characteristics of material 36a are process dependent and may vary as desired. For example, the viscosity may be 100 cps or greater.


The constituent components that form material 36a to provide the aforementioned characteristics may differ. This results from substrate 31 being formed from a number of different materials. As a result, the chemical composition of surface 32 varies dependent upon the material from which substrate 31 is formed. For example, substrate 31 may be formed from, silica, indium phosphide, lithium niobate, lithium tantalate, silicon, plastics, gallium arsenide, mercury telluride, and the like. Additionally, substrate 31 may include one or more layers in sub-portion 34b, for example, dielectric layer, metal layer, semiconductor layer, planarization layer and the like.


Referring to FIGS. 2, 3 and 4, it is desired, however, that material 36a include components to satisfy desired release characteristics when mold 28 interfaces with both material 36a and material 36c. Specifically, to ensure efficient filling of features of mold 28, it is desired that the interface of mold 28 and material 36a be established so that wetting of mold 28 by imprinting material 36a is facilitated. However, once material 36a is solidified into material 36c, material 36a should preferentially adhere to surface 32 of substrate 31 and easily release from mold 28. In this fashion, distortions in the pattern recorded in solidified material 36c are minimized. The preferential adhesion of material 36c to substrate 31 is referred to as release characteristics. The release characteristics of imprinting material 36c are measured employing an adhesion test described by Taniguchi et al. in Measurement of Adhesive Force Between Mold and Photocurable Resin in Imprint Technology, Japanese Journal of Applied Physics, part 1, vol. 40, beginning at page 4194 (2002). It has been discovered that desirable values for these release characteristics are: (a) an adhesion force to mold 28, for example, and without limitation, of about 0.15 kg or less; and (b) an adhesion force to substrate 31, for example, and without limitation, of about 1.14 kg or more. It is desired that the ratio of adhesion forces, i.e., the adhesion force of substrate 31/the adhesion force of mold 28 [hereinafter referred to as the adhesion ratio] be 5 or greater.


In addition to the above-described release characteristics, when designing an imprinting material for use in imprint lithography, further considerations include: (a) low viscosity, for example, and without limitation, a viscosity of 5 centipoise or less, to enable desirable wetting and spreading on the substrate and rapid fill of the features on the imprint template (it is better if the viscosity is sufficiently low so that minimal pressure (for example, and without limitation, a pressure of about 2-4 psi) with minimal or no additional heating to move the imprinting material into features of an imprint template); (b) low vapor pressure so that there is little evaporation (evaporation is a problem since the droplets of imprinting material may be on the order of 80 pico-liters, and this results in droplets having a large ratio between surface area and volume); (c) the use of a suitable initiator to initiate polymerization upon exposure to actinic radiation, e.g., UV radiation, thermal radiation and the like; (d) a monomer component that satisfies the low viscosity characteristics in a liquid state of the composition and provide suitable mechanical strength in a solid cured state of the composition; and (e) silylated monomers to provide the silicon desired to provide etch selectivity.


In addition to the above, we have discovered macroscopic mechanical properties of a polymerized imprinting material that is desired to be taken into consideration when designing an appropriate imprinting material. These include: (a) tensile modulus, for example, and without limitation, of about 100-400 MPa or greater—typically, the higher the better; (b) break stress, for example, and without limitation, of about 3-12 MPa or greater—typically, the higher the better; and (c) elongation at break, for example, and without limitation, of 2% or more.


The design of a suitable imprinting material is an iterative procedure that focuses on materials in the following order: (a) formulation volatility (i.e., use of low vapor pressure components); (b) viscosity control (i.e., use of low viscosity components); (c) rapid polymerization kinetics, e.g., less than a minute and more suitable less than two seconds; (d) component miscibility; (e) mechanical properties (tensile modulus, break stress, elongation at break, and Tg); (f) wetting and spreading (fluid flow behavior); and (g) adhesions (low to the imprint template and high to the substrate).


The requirement of low viscosity may restrict the choice of components used to fabricate the imprinting material. To build up the strength of the polymerized material based on non-polar monomers, one may compromise and add higher viscosity components. For example, identified is isobornyl acrylate as the building block with silicon containing acrylate monomer components being added to provide silicon for etch selectivity. Typically, the high viscosity components are added judiciously to maintain an overall viscosity of imprinting material 36a to be less than 5 cps.


We have designed an imprinting material by taking into account the design considerations set forth above, and adding the use of a fluorinated surfactant to satisfy desired release characteristics. An exemplary composition for material 36a that utilizes a fluorinated surfactant is produced by mixing (with exemplary proportions being given in weight): (i) acryloxymethylpentamethyldisiloxane (for example, and without limitation, about 37 gm) which is available under the designation XG-1064 from Gelest, Inc. of Morrisville, Pa., (ii) isobornyl acrylate (“IBOA”) (for example, and without limitation, about 42 gm) that is available from Aldrich Chemical Company of Milwaukee, Wis., (iii) ethylene glycol diacrylate (for example, and without limitation, about 18 gm) that is available from Aldrich Chemical Company of Milwaukee, Wis., (iv) a UV photoinitiator, for example, and without limitation, 2-hydrozy-2-methyl-1-phenyl-propan-1-one (for example, and without limitation, about 3 gm) that is available under the designation Darocur 1173 from CIBA® of Tarrytown, N.Y.), and (v) FSO-100 (for example, and without limitation, about 0.5 gm) where FSO-100 is a surfactant that is available under the designation ZONYL® FSO-100 from DUPONT™ (FSO-100 has a general structure of R1R2 where R1═F(CF2CF2)y, with Y being in a range of 1 to 7, inclusive and R2═CH2CH2O(CH2CH2O)xH, where X is in a range of 0 to 15, inclusive).


An alternative composition for material 36a is produced by mixing (with exemplary proportions being given in weight): (i) acryloxymethylpentamethyldisiloxane (for example, and without limitation, about 37 gm) which is available under the designation XG-1064 from Gelest, Inc. of Morrisville, Pa., (ii) isobornyl acrylate (“IBOA”) (for example, and without limitation, about 42 gm) that is available from Aldrich Chemical Company of Milwaukee, Wis., (iii) ethylene glycol diacrylate (for example, and without limitation, about 18 gm) that is available from Aldrich Chemical Company of Milwaukee, Wis., (iv) a UV photoinitiator, for example, and without limitation, 2-hydrozy-2-methyl-1-phenyl-propan-1-one (for example, and without limitation, about 3 gm) that is available under the designation Darocur 1173 from CIBA® of Tarrytown, N.Y.), and (v) FC4432 (for example, and without limitation, about 0.5 gm) where FC4432 is a polymeric surfactant that is available from 3M Company under the designation FLUORAD® FC4432.


Another alternative composition for material 36a is produced by mixing (with exemplary proportions being given in weight): (i) acryloxymethylpentamethyldisiloxane (for example, and without limitation, about 37 gm) which is available under the designation XG-1064 from Gelest, Inc. of Morrisville, Pa., (ii) isobornyl acrylate (“IBOA”) (for example, and without limitation, about 42 gm) that is available from Aldrich Chemical Company of Milwaukee, Wis., (iii) ethylene glycol diacrylate (for example, and without limitation, about 18 gm) that is available from Aldrich Chemical Company of Milwaukee, Wis., (iv) a UV photoinitiator, for example, and without limitation, 2-hydrozy-2-methyl-1-phenyl-propan-1-one (for example, and without limitation, about 3 gm) that is available under the designation Darocur 1173 from CIBA® of Tarrytown, N.Y.), and (v) FC4430 (for example, and without limitation, about 0.5 gm) where FC4430 is a polymeric surfactant that is available from 3M Company under the designation FLUORAD® FC4430.


In addition to the silicon containing composition for material 36a, a non-silicon-containing composition for material 36a may be employed. An exemplary non-silicon-containing composition includes i) approximately 55 gm isobornyl acrylate, ii) approximately 27 gm n-hexyl acrylate, iii) approximately 15 gm ethylene glycol diacrylate, iv) approximately 0.5 gm of the ZONYL® FSO-100 surfactant, and v) the DAROCUR® initiator that is approximately 3 gm of the composition.


An additional non-silicon-containing composition for material 36a, includes i) approximately 55 gm isobornyl acrylate, ii) approximately 27 gm n-hexyl acrylate, iii) approximately 15 gm ethylene glycol diacrylate, iv) approximately 0.5 gm of the FC4432 surfactant, and v) the DAROCUR initiator that is approximately 3 gm of the composition.


Another non-silicon-containing composition for material 36a includes i) approximately 55 gm isobornyl acrylate, ii) approximately 27 gm n-hexyl acrylate, iii) approximately 15 gm ethylene glycol diacrylate, iv) approximately 0.5 gm of the FC4430 surfactant, and v) the DAROCUR initiator that is approximately 3 gm of the composition. Each of the above-identified compositions also includes stabilizers that are well known in the chemical art to increase the operational life of the composition.


In yet another example of a non-silicon-containing composition included are i) approximately 47 gm of isobornyl acrylate, ii) approximately 25 gm of n-hexyl acrylate, iii) approximately 25 gm of ethylene glycol diacrylate, iv) approximately 0.5 gm of the ZONYL® FSO-100 surfactant, and v) the DAROCUR® initiator that is approximately 3 gm of the composition.


In yet another non-silicon-containing composition for material 36a a surfactant mixture is included that comprises of a non-fluorinated surfactant and a fluorinated surfactant. An exemplary composition includes i) approximately 55 gm isobornyl acrylate, ii) approximately 27 gm n-hexyl acrylate, iii) approximately 15 gm ethylene glycol diacrylate, and iv) the DAROCUR® initiator that is approximately 3 gm of the composition and 0.5 gm of a surfactant mixture. An exemplary surfactant mixture consists of 0.25 gm of FC4432 and 0.25 gm of a tri-siloxane surfactant available under the designation Sylgard® 309 from Dow Corning Corporation of Auburn, Mich.


Similarly, the surfactant mixture may be used in conjunction with a silicon-containing composition described above. An exemplary composition includes (i) acryloxymethylpentamethyldisiloxane (for example, and without limitation, about 37 gm) (ii) isobornyl acrylate (“IBOA”) (for example, and without limitation, about 42 gm) (iii) ethylene glycol diacrylate (for example, and without limitation, about 18 gm), (iv) the Darocur 1173 initiator (for example and without limitation 3 gm) and (v) an exemplary surfactant mixture consisting of 0.25 gm of FC4432 and 0.25 gm of a tri-siloxane surfactant available under the designation Sylgard® 309 from Dow Corning Corporation of Auburn, Mich.


Each of the above-identified compositions may also include stabilizers that are well known in the chemical art to increase the operational life of the composition. The surfactant comprises less than 1% of the imprinting material. However, the percentage of the surfactant may be greater than 1%.


An advantage provided by the above-described imprinting material is that they abrogates the need for an a priori release layer, i.e., a separate hydrophobic and/or low surface energy release layer disposed on imprint template 28. Specifically, the inclusion of the surfactants in the compositions provide desirable release properties to mold 28 and imprinting layer 34 so as to reduce, if not avoid, degradation of, or distortions in, the pattern recorded in the imprinting layer 34.


Referring to FIG. 6, it is believed that surfactant molecules in droplets 36 of the imprinting material preferentially move toward the gas-liquid interface in less than about 1 second. As such, it is believed that droplets 36 have a higher concentration of the surfactant in region 136 as compared to region 137 in which the polymerizable components are concentrated. It is believed that this is the result of an energy minimization process wherein the surfactant tends to move to the gas-liquid interface and its hydrophobic end aligns towards the gas. For example, it is believed that the hydrophobic end of the surfactant is aligned to project out of the liquid and into the gas, and the hydrophilic end is aligned to project into the liquid. However, when the imprinting material contacts the surface of the imprint template, it is believed that exposed silanol bonds on the surface of the imprint template cause the hydrophilic end of the surfactant molecule to flip and to contact the exposed silanol bonds so that the hydrophobic end faces downwardly e.g., outwardly from the surface of the imprint template to enable adhesion reduction. It is further believed that weakly bound surfactant lamella may also be formed at the surface of the imprint template, which lamella may comprise, for example, two (2) layers of surfactant molecules.


Referring to FIG. 2, an additional advantage provided by the above-described imprinting material is that template cleaning and preparation time is shortened; therefore, the overall process is simplified. Of course, the above-described imprinting material may be employed with an a priori release layer, such as those known in the prior art.


Another manner by which to improve the release properties of mold 28 includes pre-conditioning the pattern of mold 28 by exposing the same to a conditioning mixture including an additive that will remain on mold 28 to reduce the surface energy of the mold surface. An exemplary additive is a surfactant.


The above-described imprinting materials are useful in providing substantially high feature fidelity imprint lithography, while providing suitable operational life to an imprint template. For example, an imprint template having a patterning area, i.e., mold, of 25×25 mm having 40 to 50 nm features was employed to generate five hundred (500) imprints with minimal pattern feature degradation and distortion.


An exemplary imprinting method using the imprinting material described above includes as a first step, pretreating the surface of a quartz imprint template to create hydrophilic bonds at the surface, for example, and without limitation, silanol (Si—OH) bonds. In accordance with one or more embodiments of the present invention, the surface of the imprint template is dipped in a 2.5:1 solution of H2SO4 and H2O2 to hydrolyze the surface, i.e., to create silanol bonds at the surface. This is referred to as piranha cleaning.


As a next step, the surface is further pre-treated by spraying the surface of the imprint template with a diluted surfactant solution (for example, and without limitation, 0.1% in isopropyl alcohol (IPA). The surfactant efficiently at the surface of the imprint template with hydrophobic ends projecting outwardly from the surface. Such alignment is promoted by piranha cleaning the surface to create silanol bonds on the surface. Exposure of the surface of the imprint template may be achieved by virtually any method known in the art, including dipping the surface into a volume of pre-treatment solution, wiping the surface with a cloth saturated with pre-treatment solution, and spraying a stream of pre-treatment solution onto the surface. The IPA in the pre-treatment solution may be allowed to evaporate before using the mold 28. In this manner, the IPA facilitates removing undesired contaminants from the surface while leaving the surfactant adsorbed thereto. Because the surfactant includes a hydrophobic end and a hydrophilic end, the silanol bonds promote alignment of the surfactant so that the hydrophilic end “attaches” to the —OH end of the silanol bonds, and the hydrophobic end points away from the surface. In a next step, a gap between the imprint template and the substrate is purged of air using, for example, and without limitation, a ˜5 psi helium purge.


In a next step, the imprinting material containing the surfactant is applied to the substrate, for example, and without limitation, by placing a pattern of substantially equidistant droplets of the following imprinting material on the substrate, or by spin-coating, or by any other method known to those of ordinary skill in the art. In this example, the substrate was covered with a transfer layer whose top layer was a cross-linked BARC material (BARC or “bottom antireflective coating” is an organic antireflective coating that is typically produced by a spin-on process). The BARC layer was used to prevent intermixing between an imprinting material and a transfer layer, which intermixing may be particularly problematic when using an imprinting material comprised of low viscosity components used herein, because such components have solvency toward many polymers. Substantial intermixing may cause problems, such as, for example, and without limitation, distortion of features during subsequent etching processes. This can be particularly problematic when feature thicknesses are as small as 50 to 100 nm. Next, the familiar steps of imprint lithography are carried out, i.e., exposure to actinic radiation to polymerize the imprinting material; separation of the imprint template and the substrate; and selective etching to transfer the feature pattern to the substrate.


It is believed that even when pre-treating the surface of the imprint template as described above utilizing one or more surfactants, the one or more surfactants are adsorbed to the silanol surface of the imprint template ultimately become abraded away. However, as was described above, the surfactant contained in the imprinting material rapidly comes to the gas-liquid surface of the droplets, and the surface of the imprint template is re-coated as a normal consequence of imprinting. As such, in accordance with one or more embodiments of the present invention, the pre-treatment step of applying the surfactant solution to the surface of the imprint template may be eliminated. In fact, in accordance with one or more further embodiments of the present invention, the imprint template may be contacted a few times with the imprinting material as a replacement for the pre-treatment step of applying the surfactant solution to the surface.


The embodiments of the present invention described above are exemplary. Many changes and modifications may be made to the disclosure recited above, while remaining within the scope of the invention. The scope of the invention should, therefore, be determined not with reference to the above description, but instead should be determined with reference to the appended claims along with their full scope of equivalents.

Claims
  • 1. An imprinting material for use in imprint lithography comprising: a composition having a viscosity associated therewith and including a surfactant, a polymerizable component, and an initiator responsive to a stimuli to vary said viscosity in response thereto, with said composition, in a liquid state, having said viscosity being lower than about 100 centipoises, a vapor pressure of less than about 20 Torr, and in a solid cured state a tensile modulus of greater than about 100 MPa, a break stress of greater than about 3 MPa and an elongation at break of greater than about 2%.
  • 2. The imprinting material as recited in claim 1 wherein said surfactant comprises a non-ionic surfactant.
  • 3. The imprinting material as recited in claim 1 wherein said surfactant comprises a fluorinated surfactant.
  • 4. The imprinting material as recited in claim 1 wherein said surfactant comprises a fluorinated non-ionic surfactant.
  • 5. The imprinting material as recited in claim 1 wherein said monomer is selected from the group consisting of epoxies, acrylates, methacrylates and vinyl ethers.
  • 6. The imprinting material as recited in claim 1 wherein said monomer is selected from a set of polymerizable component containing silicon therein.
  • 7. The imprinting material as recited in claim 1 wherein said monomer is a substituted acrylate.
  • 8. The imprinting material as recited in claim 1 wherein said monomer is a silicon-containing acrylate.
  • 9. The imprinting material as recited in claim 1 wherein said monomer is selected from the group of substituted acrylates consisting of mono-substituted acrylates and multifunctional-substituted acrylates.
  • 10. The imprinting material as recited in claim 1 wherein said initiator is selected from the group consisting of photo initiators and thermal initiators.
  • 11. The imprinting material as recited in claim 1 wherein said initiator is a radical photoinitiator.
  • 12. The imprinting material as recited in claim 1 wherein said viscosity in said liquid state is less than about 25 centipoises.
  • 13. The imprinting material as recited in claim 1 wherein said viscosity in said liquid state is less than about 10 centipoises.
  • 14. The imprinting material as recited in claim 1 wherein said viscosity in said liquid state is less than about 5 centipoises.
  • 15. The imprinting material as recited in claim 1 wherein said vapor pressure is lower than about 5 Torr.
  • 16. The imprinting material as recited in claim 1 wherein said vapor pressure is lower than about 2 Torr.
  • 17. The imprinting material as recited in claim 1 wherein said tensile modulus is 100 MPa or greater.
  • 18. The imprinting material as recited in claim 1 wherein said break stress of about 3 MPa or greater.
  • 19. The imprinting material as recited in claim 1 wherein said elongation at break is 8% or more.
US Referenced Citations (357)
Number Name Date Kind
3527062 Bilinski et al. Sep 1970 A
3783520 King Jan 1974 A
3807027 Heisler Apr 1974 A
3807029 Troeger Apr 1974 A
3810874 Mitsch et al. May 1974 A
3811665 Seelig May 1974 A
3919351 Chang et al. Nov 1975 A
4062600 Wyse Dec 1977 A
4070116 Frosch et al. Jan 1978 A
4098001 Watson Jul 1978 A
4119688 Hiraoka Oct 1978 A
4155169 Drake et al. May 1979 A
4201800 Alcorn et al. May 1980 A
4202107 Watson May 1980 A
4251277 Martin Feb 1981 A
4267212 Sakawaki May 1981 A
4271258 Watariguchi Jun 1981 A
4326805 Feldman et al. Apr 1982 A
4337579 De Fazio Jul 1982 A
4355469 Nevins et al. Oct 1982 A
4414750 De Fazio Nov 1983 A
4426247 Tamamura et al. Jan 1984 A
4440804 Milgram Apr 1984 A
4451507 Beltz et al. May 1984 A
4507331 Hiraoka Mar 1985 A
4512848 Deckman et al. Apr 1985 A
4514439 Rounds Apr 1985 A
4517337 Lockhart et al. May 1985 A
4544572 Sandvig et al. Oct 1985 A
4552832 Blume et al. Nov 1985 A
4552833 Ito et al. Nov 1985 A
4600309 Fay Jul 1986 A
4610442 Oku et al. Sep 1986 A
4614667 Larson et al. Sep 1986 A
4617238 Crivello et al. Oct 1986 A
4657845 Frechet et al. Apr 1987 A
4687707 Matsuo et al. Aug 1987 A
4692205 Sachdev et al. Sep 1987 A
4694703 Routson Sep 1987 A
4707218 Giammarco et al. Nov 1987 A
4722878 Watakabe et al. Feb 1988 A
4724222 Feldman Feb 1988 A
4731155 Napoli et al. Mar 1988 A
4737425 Lin et al. Apr 1988 A
4763886 Takei Aug 1988 A
4808511 Holmes Feb 1989 A
4826943 Ito et al. May 1989 A
4846931 Gmitter et al. Jul 1989 A
4848911 Uchida et al. Jul 1989 A
4857477 Kanamori Aug 1989 A
4883561 Gmitter et al. Nov 1989 A
4891303 Garza et al. Jan 1990 A
4908298 Hefferon et al. Mar 1990 A
4919748 Bredbenner et al. Apr 1990 A
4921778 Thackeray et al. May 1990 A
4929083 Brunner May 1990 A
4931351 McColgin et al. Jun 1990 A
4959252 Bonnebat et al. Sep 1990 A
4964945 Calhoun Oct 1990 A
4976818 Hashimoto et al. Dec 1990 A
4980316 Huebner Dec 1990 A
4988274 Kenmochi Jan 1991 A
4999280 Hiraoka Mar 1991 A
5028366 Harakal et al. Jul 1991 A
5053318 Gulla et al. Oct 1991 A
5063321 Carter Nov 1991 A
5071694 Uekita et al. Dec 1991 A
5072126 Progler Dec 1991 A
5073230 Maracas et al. Dec 1991 A
5074667 Miyatake Dec 1991 A
5108875 Thackeray et al. Apr 1992 A
5110514 Soane May 1992 A
5126006 Cronin et al. Jun 1992 A
5148036 Matsugu et al. Sep 1992 A
5148037 Suda et al. Sep 1992 A
5149592 Wojnarowicz Sep 1992 A
5151754 Ishibashi et al. Sep 1992 A
5169494 Hashimoto et al. Dec 1992 A
5173393 Sezi et al. Dec 1992 A
5179863 Uchida et al. Jan 1993 A
5198326 Hashimoto et al. Mar 1993 A
5204381 Zeigler Apr 1993 A
5204739 Domenicali Apr 1993 A
5206983 Guckel et al. May 1993 A
5212147 Sheats May 1993 A
5234793 Sebald et al. Aug 1993 A
5240550 Boehnke et al. Aug 1993 A
5240878 Fitzsimmons et al. Aug 1993 A
5242711 DeNatale et al. Sep 1993 A
5244818 Jokerst et al. Sep 1993 A
5259926 Kuwabara et al. Nov 1993 A
5270984 Mine Dec 1993 A
5277749 Griffith et al. Jan 1994 A
5298556 Stephens Mar 1994 A
5314731 Yoneda et al. May 1994 A
5314772 Kozicki et al. May 1994 A
5318870 Hartney Jun 1994 A
5324683 Fitch et al. Jun 1994 A
5328810 Lowrey et al. Jul 1994 A
5330881 Sidman et al. Jul 1994 A
5331020 Brown et al. Jul 1994 A
5348616 Hartman et al. Sep 1994 A
5362606 Hartney et al. Nov 1994 A
5366851 Novembre Nov 1994 A
5369722 Heming et al. Nov 1994 A
5374454 Bickford et al. Dec 1994 A
5376810 Hoenk et al. Dec 1994 A
5380474 Rye et al. Jan 1995 A
5389696 Dempsey et al. Feb 1995 A
5392123 Marcus et al. Feb 1995 A
5417802 Obeng May 1995 A
5421981 Leader et al. Jun 1995 A
5422295 Choi et al. Jun 1995 A
5424549 Feldman Jun 1995 A
5425848 Haisma et al. Jun 1995 A
5425964 Southwell et al. Jun 1995 A
5431777 Austin et al. Jul 1995 A
5439766 Day et al. Aug 1995 A
5452090 Progler et al. Sep 1995 A
5453157 Jeng Sep 1995 A
5458520 DeMercurio et al. Oct 1995 A
5468542 Crouch Nov 1995 A
5480047 Tanigawa et al. Jan 1996 A
5482768 Kawasato et al. Jan 1996 A
5512131 Kumar et al. Apr 1996 A
5515167 Ledger et al. May 1996 A
5523878 Wallace et al. Jun 1996 A
5527662 Hashimoto et al. Jun 1996 A
5542978 Kindt-Larsen et al. Aug 1996 A
5545367 Bae et al. Aug 1996 A
5566584 Briganti Oct 1996 A
5594042 Glover et al. Jan 1997 A
5601641 Stephens Feb 1997 A
5629095 Bujanowski et al. May 1997 A
5633505 Chung et al. May 1997 A
5654238 Cronin et al. Aug 1997 A
5669303 Maracas et al. Sep 1997 A
5670415 Rust Sep 1997 A
5700626 Lee et al. Dec 1997 A
5723176 Keyworth et al. Mar 1998 A
5724145 Kondo et al. Mar 1998 A
5725788 Maracas et al. Mar 1998 A
5736424 Prybyla et al. Apr 1998 A
5743998 Park Apr 1998 A
5747102 Smith et al. May 1998 A
5753014 Van Rijn May 1998 A
5760500 Kondo et al. Jun 1998 A
5772905 Chou Jun 1998 A
5776748 Singhvi et al. Jul 1998 A
5779799 Davis Jul 1998 A
5802914 Fassler et al. Sep 1998 A
5820769 Chou Oct 1998 A
5837314 Beaton et al. Nov 1998 A
5849209 Kindt-Larsen et al. Dec 1998 A
5849222 Jen et al. Dec 1998 A
5855686 Rust Jan 1999 A
5861467 Bujanowski et al. Jan 1999 A
5877036 Kawai Mar 1999 A
5877861 Ausschnitt et al. Mar 1999 A
5888650 Calhoun et al. Mar 1999 A
5895263 Carter et al. Apr 1999 A
5900160 Whitesides et al. May 1999 A
5905104 Eklund et al. May 1999 A
5907782 Wu May 1999 A
5912049 Shirley Jun 1999 A
5926690 Toprac et al. Jul 1999 A
5937758 Maracas et al. Aug 1999 A
5942871 Lee Aug 1999 A
5948219 Rohner Sep 1999 A
5948470 Harrison et al. Sep 1999 A
5948570 Kornblit et al. Sep 1999 A
5952127 Yamanaka Sep 1999 A
5956216 Chou Sep 1999 A
6015609 Chaouk et al. Jan 2000 A
6033977 Gutsche et al. Mar 2000 A
6035805 Rust Mar 2000 A
6038280 Rossiger et al. Mar 2000 A
6039897 Lockhead et al. Mar 2000 A
6046056 Parce et al. Apr 2000 A
6051345 Huang Apr 2000 A
6060530 Chaouk et al. May 2000 A
6066269 Wei et al. May 2000 A
6074827 Nelson et al. Jun 2000 A
6091485 Li et al. Jul 2000 A
6096655 Lee et al. Aug 2000 A
6114404 Deeken et al. Sep 2000 A
6117708 Wensel Sep 2000 A
6125183 Jiawook et al. Sep 2000 A
6128085 Buermann et al. Oct 2000 A
6132632 Haney et al. Oct 2000 A
6143412 Schueller et al. Nov 2000 A
6146811 Kim et al. Nov 2000 A
6150231 Muller et al. Nov 2000 A
6150680 Eastman et al. Nov 2000 A
6160030 Chaouk et al. Dec 2000 A
6168845 Fontana, Jr. et al. Jan 2001 B1
6174931 Moon et al. Jan 2001 B1
6174932 Pachl et al. Jan 2001 B1
6180239 Whitesides et al. Jan 2001 B1
6188150 Spence Feb 2001 B1
6190929 Wang et al. Feb 2001 B1
6204343 Barucha et al. Mar 2001 B1
6204922 Chalmers Mar 2001 B1
6218316 Marsh Apr 2001 B1
6225367 Chaouk et al. May 2001 B1
6245581 Bonser et al. Jun 2001 B1
6274294 Hines Aug 2001 B1
6309580 Chou Oct 2001 B1
6316290 Wensel Nov 2001 B1
6326627 Putvinski et al. Dec 2001 B1
6329256 Ibok Dec 2001 B1
6334960 Willson et al. Jan 2002 B1
6335149 Xu et al. Jan 2002 B1
6342097 Terry et al. Jan 2002 B1
6344105 Daugherty et al. Feb 2002 B1
6355198 Kim et al. Mar 2002 B1
6383928 Eissa May 2002 B1
6387783 Furukawa et al. May 2002 B1
6388253 Su May 2002 B1
6391217 Schaffer et al. May 2002 B2
6391798 DeFelice et al. May 2002 B1
6411010 Suzuki et al. Jun 2002 B1
6447919 Brown et al. Sep 2002 B1
6455411 Jiang et al. Sep 2002 B1
6467761 Amatucci et al. Oct 2002 B1
6468642 Bray et al. Oct 2002 B1
6468896 Rohr et al. Oct 2002 B2
6475704 Iwasaki et al. Nov 2002 B1
6482742 Chou Nov 2002 B1
6489068 Kye Dec 2002 B1
6495624 Brown Dec 2002 B1
6503914 Benish et al. Jan 2003 B1
6514672 Tsai et al. Feb 2003 B2
6517995 Jacobenson et al. Feb 2003 B1
6518168 Clem et al. Feb 2003 B1
6518189 Chou Feb 2003 B1
6534418 Plat et al. Mar 2003 B1
6541356 Fogel et al. Apr 2003 B2
6541360 Plat et al. Apr 2003 B1
6544594 Linford et al. Apr 2003 B2
6561706 Singh et al. May 2003 B2
6565776 Li et al. May 2003 B1
6565928 Sakamoto et al. May 2003 B2
6580172 Mancini et al. Jun 2003 B2
6583248 Bowen Jun 2003 B1
6600207 Huang et al. Jul 2003 B2
6632742 Yang et al. Oct 2003 B2
6635581 Wong Oct 2003 B2
6646662 Nebashi et al. Nov 2003 B1
6649272 Moore et al. Nov 2003 B2
6664306 Gaddam et al. Dec 2003 B2
6677252 Marsh Jan 2004 B2
6696157 David et al. Feb 2004 B1
6696220 Bailey et al. Feb 2004 B2
6703190 Elian Mar 2004 B2
6713238 Chou et al. Mar 2004 B1
6716767 Shih et al. Apr 2004 B2
6719915 Willson et al. Apr 2004 B2
6721529 Chen et al. Apr 2004 B2
6730256 Bloomstein et al. May 2004 B1
6737202 Gehoski et al. May 2004 B2
6737489 Linert et al. May 2004 B2
6743713 Mukherjee-Roy et al. Jun 2004 B2
6767983 Fujiyama et al. Jul 2004 B1
6770852 Steger Aug 2004 B1
6774183 Palumbo et al. Aug 2004 B1
6776094 Whitesides et al. Aug 2004 B1
6777170 Bloomstein et al. Aug 2004 B1
6790905 Fitzgerald et al. Sep 2004 B2
6802870 Chang et al. Oct 2004 B2
6809356 Chou Oct 2004 B2
6828244 Chou Dec 2004 B2
6830819 Kaplan et al. Dec 2004 B2
6849558 Schaper Feb 2005 B2
6900881 Sreenivasan et al. May 2005 B2
6908861 Sreenivasan et al. Jun 2005 B2
6916584 Sreenivasan et al. Jul 2005 B2
6932934 Choi et al. Aug 2005 B2
6936194 Watts Aug 2005 B2
20010044075 Nishimura et al. Nov 2001 A1
20020042027 Chou et al. Apr 2002 A1
20020072009 Kim et al. Jun 2002 A1
20020093122 Choi et al. Jul 2002 A1
20020094496 Choi et al. Jul 2002 A1
20020098426 Sreenivasan et al. Jul 2002 A1
20020132482 Chou Sep 2002 A1
20020135099 Robinson et al. Sep 2002 A1
20020146642 Kim et al. Oct 2002 A1
20020150398 Choi et al. Oct 2002 A1
20020167117 Chou Nov 2002 A1
20020177319 Chou Nov 2002 A1
20030034329 Chou Feb 2003 A1
20030062334 Lee et al. Apr 2003 A1
20030080471 Chou May 2003 A1
20030080472 Chou May 2003 A1
20030081193 White et al. May 2003 A1
20030113638 Mancini et al. Jun 2003 A1
20030129542 Shih et al. Jul 2003 A1
20030166814 Sparrowe et al. Sep 2003 A1
20030205657 Voisin Nov 2003 A1
20030205658 Voisin Nov 2003 A1
20030215577 Willson et al. Nov 2003 A1
20030235787 Watts et al. Dec 2003 A1
20040007799 Choi et al. Jan 2004 A1
20040008334 Sreenivasan et al. Jan 2004 A1
20040009673 Sreenivasan et al. Jan 2004 A1
20040010341 Watts et al. Jan 2004 A1
20040021254 Sreenivasan et al. Feb 2004 A1
20040021866 Watts et al. Feb 2004 A1
20040022888 Sreenivasan et al. Feb 2004 A1
20040029041 Shih et al. Feb 2004 A1
20040036201 Chou et al. Feb 2004 A1
20040046288 Chou Mar 2004 A1
20040053146 Sreenivasan et al. Mar 2004 A1
20040065252 Sreenivasan et al. Apr 2004 A1
20040086793 Sreenivasan et al. May 2004 A1
20040089979 Rubin May 2004 A1
20040090611 Choi et al. May 2004 A1
20040104641 Choi et al. Jun 2004 A1
20040110856 Young et al. Jun 2004 A1
20040112861 Choi et al. Jun 2004 A1
20040112862 Willson et al. Jun 2004 A1
20040116548 Willson et al. Jun 2004 A1
20040118809 Chou et al. Jun 2004 A1
20040124566 Sreenivasan et al. Jul 2004 A1
20040131718 Chou et al. Jul 2004 A1
20040137734 Chou et al. Jul 2004 A1
20040141163 Bailey et al. Jul 2004 A1
20040141168 Sreenivasan et al. Jul 2004 A1
20040149687 Choi et al. Aug 2004 A1
20040156108 Chou et al. Aug 2004 A1
20040163563 Sreenivasan et al. Aug 2004 A1
20040168586 Bailey et al. Sep 2004 A1
20040168588 Choi et al. Sep 2004 A1
20040168613 Nguyen Sep 2004 A1
20040169441 Choi et al. Sep 2004 A1
20040170770 Nguyen Sep 2004 A1
20040170771 Bailey et al. Sep 2004 A1
20040188381 Sreenivasan et al. Sep 2004 A1
20040189994 Sreenivasan et al. Sep 2004 A1
20040189996 Sreenivasan et al. Sep 2004 A1
20040192041 Jeong et al. Sep 2004 A1
20040197843 Chou et al. Oct 2004 A1
20040200411 Willson et al. Oct 2004 A1
20040202865 Homola et al. Oct 2004 A1
20040202872 Fang et al. Oct 2004 A1
20040209177 Sreenivasan et al. Oct 2004 A1
20040241338 Foster et al. Dec 2004 A1
20040250945 Zheng et al. Dec 2004 A1
20050037143 Chou et al. Feb 2005 A1
20050051698 Sreenivasan et al. Mar 2005 A1
20050084804 Truskett et al. Apr 2005 A1
20050100830 Xu et al. May 2005 A1
20050118749 Sakamoto et al. Jun 2005 A1
20050156357 Willson et al. Jul 2005 A1
20050160934 Xu et al. Jul 2005 A1
20060111454 Xu et al. May 2006 A1
Foreign Referenced Citations (44)
Number Date Country
2800476 Jul 1978 DE
19648844 Sep 1997 DE
244884 Mar 1987 EP
733455 Sep 1996 EP
1342736 Oct 2003 EP
1491356 Dec 2004 EP
55-88332 Jul 1980 JP
57-7931 Jan 1982 JP
61-40845 Feb 1986 JP
63-138730 Jun 1988 JP
1-196749 Aug 1989 JP
02-24848 Jan 1990 JP
02-92603 Apr 1990 JP
02192045 Jul 1990 JP
2-248480 Oct 1990 JP
3-90345 Apr 1991 JP
9-278490 Oct 1997 JP
WO 8702935 May 1987 WO
WO 9217883 Oct 1992 WO
WO 9810121 Mar 1998 WO
WO 9905724 Feb 1999 WO
WO 9945753 Sep 1999 WO
WO 9963535 Dec 1999 WO
WO 0021689 Apr 2000 WO
0046035 Aug 2000 WO
0054107 Sep 2000 WO
WO 0054107 Sep 2000 WO
WO 0133232 May 2001 WO
WO 0133300 May 2001 WO
WO 0147003 Jun 2001 WO
WO 0153889 Jul 2001 WO
WO 0169317 Sep 2001 WO
WO 0179589 Oct 2001 WO
WO 0179592 Oct 2001 WO
WO 0190816 Nov 2001 WO
WO 0207199 Jan 2002 WO
02069040 Sep 2002 WO
WO 03010289 Feb 2003 WO
03073164 Sep 2003 WO
WO 03079416 Sep 2003 WO
WO 03099536 Dec 2003 WO
WO 2004044651 May 2004 WO
2004061526 Jul 2004 WO
WO 2004114016 Dec 2004 WO
Related Publications (1)
Number Date Country
20050187339 A1 Aug 2005 US