Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate

CROSS-REFERENCE TO RELATED APPLICATIONS
This application contains subject matter related to commonly assigned, co-pending application Ser. Nos. 697,141; 699,868; 705,516; 720,011; 740,901; 786,970; 717,821; 719,980; 725,751; 726,768; 739,867; 740,714; 741,300; 753,048; 753,011; and 752,920.
BACKGROUND OF THE INVENTION
1. Field of the invention
This invention relates to a light receiving member having sensitivity to electromagnetic waves such as light [herein used in a broad sense, including ultraviolet rays, visible light, infrared rays, X-rays and gamma-rays]. More particularly, it pertains to a light receiving member suitable for using a coherent light such as laser beam.
2. Description of the prior art
As the method for recording a digital image information as an image, there have been well known the methods in which an electrostatic latent image is formed by scanning optically a light receiving member with a laser beam modulated corresponding to a digital image information, then said latent image is developed, followed by processing such as transfer or fixing, if desired, to record an image. Among them, in the image forming method employing electrophotography, image recording has been generally practiced with the use of a small size and inexpensive He-Ne laser or a semiconductor laser (generally having an emitted wavelength of 650-820 nm).
In particular, as the light receiving member for electrophotography which is suitable when using a semiconductor laser, an amorphous material containing silicon atoms (hereinafter written briefly as "A-Si") as disclosed in Japanese Laid-open patent application Nos. 86341/1979 and 83746/1981 is attracting attention for its high Vickers hardness and non-polluting properties in social aspect in addition to the advantage of being by far superior in matching in its photosensitive region as compared with other kinds of light receiving members.
However, when the photosensitive layer is made of a single A-Si layer, for ensuring dark resistance of 10.sup.12 ohm.cm or higher required for electrophotography while maintaining high photosensitivity, it is necessary to incorporate structurally hydrogen atoms or halogen atoms or boron atoms in addition thereto in controlled form within specific ranges of amounts. Accordingly, control of layer formation is required to be performed severely, whereby tolerance in designing of a light receiving member is considerably limited.
As attempts to enlarge this tolerance in designing, namely to enable effective utilization of its high photosensitivity in spite of somewhat lower dark resistance, there have been proposed a light receiving layer with a multi-layer structure of two or more laminated layers with different conductivity characteristics with formation of a depletion layer within the light receiving layer, as disclosed in Japanese Laid-open patent application Nos. 121743/1979, 4053/1982 and 4172/1982, or a light receiving member with a multi-layer structure in which a barrier layer is provided between the substrate and the photosensitive layer and/or on the upper surface of the photosensitive layer, thereby enhancing apparent dark resistance of the light receiving layer as a whole, as disclosed in Japanese Laid-open patent application Nos. 52178/1982, 52179/1982, 52180/1982, 58159/1982, 58160/1982 and 58161/1982.
According to such proposals, A-Si type light receiving members have been greatly advanced in tolerance in designing of commercialization thereof or easiness in management of its production and productivity, and the speed of development toward commercialization is now further accelerated.
When carrying out laser recording by use of such a light receiving member having a light receiving layer of a multi-layer structure, due to irregularity in thickness of respective layers, and also because of the laser beam which is an coherent monochromatic light, it is possible that the respective reflected lights reflected from the free surface on the laser irradiation side of the light receiving layer and the layer interface between the respective layers constituting the light receiving layer and between the substrate and the light receiving layer (hereinafter "interface" is used to mean comprehensively both the free surface and the layer interface) may undergo interference.
Such an interference phenomenon results in the so-called interference fringe pattern in the visible image formed and causes a poor image. In particular, in the case of forming a medium tone image with high gradation, bad appearance of the image will become marked.
Moreover, as the wavelength region of the semiconductor laser beam is shifted toward longer wavelength, absorption of said laser beam in the photosensitive layer becomes reduced, whereby the above interference phenomenon becomes more marked.
This point is explained by referring to the drawings.
FIG. 1 shows a light I.sub.0 entering a certain layer constituting the light receiving layer of a light receiving member, a reflected light R.sub.1 from the upper interface 102 and a reflected light R.sub.2 reflected from the lower interface 101.
Now, the average layer thickness of the layer is defined as d, its refractive index as n and the wavelength of the light as .lambda., and when the layer thickness of a certain layer is ununiform gently with a layer thickness difference of .lambda./2n or more, changes in absorbed light quantity and transmitted light quantity occur depending on to which condition of 2nd=m.lambda.(m is an integer, reflected lights are strengthened with each other) and 2nd=(m+1/2).lambda.(m is an integer, reflected lights are weakened with each other) the reflected lights R.sub.1 and R.sub.2 conform.
In the light receiving member of a multi-layer structure, the interference effect as shown in FIG. 1 occurs at each layer, and there ensues a synergistic deleterious influence through respective interferences as shown in FIG. 2. For this reason, the interference fringe corresponding to said interference fringe pattern appears on the visible image transferred and fixed on the transfer member to cause bad images.
As the method for cancelling such an inconvenience, it has been proposed to subject the surface of the substrate to diamond cutting to provide unevenness of .+-.500 .ANG.-.+-.10000 .ANG., thereby forming a light scattering surface (as disclosed in Japanese Laid-open patent application No. 162975/1983); to provide a light absorbing layer by subjecting the aluminum substrate surface to black Alumite treatment or dispersing carbon, color pigment or dye in a resin (as disclosed in Japanese Laid-open patent application No. 165845/1982); and to provide a light scattering reflection preventive layer on the substrate surface by subjecting the aluminum substrate surface to satin-like Alumite treatment or by providing a sandy fine unevenness by sand blast (as disclosed in Japanese Laid-open patent application No. 16554/1982).
However, according to these methods of the prior art, the interference fringe pattern appearing on the image could not completely be cancelled.
For example, because only a large number of unevenness with specific sized are formed on the substrate surface according to the first method, although prevention of appearance of interference fringe through light scattering is indeed effected, regular reflection light component yet exists. Therefore, in addition to remaining of the interference fringe by said regular reflection light, enlargement of irradiated spot occurs due to the light scattering effect on the surface of the substrate to be a cause for substantial lowering of resolution.
As for the second method, such a black Alumite treatment is not sufficient for complete absorption, but reflected light from the substrate surface remains. Also, there are involved various inconveniences. For example, in providing a resin layer containing a color pigment dispersed therein, a phenomenon of degassing from the resin layer occurs during formation of the A-Si photosensitive layer to markedly lower the layer quality of the photosensitive layer formed, and the resin layer suffers from a damage by the plasma during formation of A-Si photosensitive layer to be deteriorated in its inherent absorbing function. Besides, worsening of the surface state deleteriously affects subsequent formation of the A-Si photosensitive layer.
In the case of the third method of irregularly roughening the substrate surface, as shown in FIG. 3, for example, the incident light I.sub.0 is partly reflected from the surface of the light receiving layer 302 to become a reflected light R.sub.1, with the remainder progressing internally through the light receiving layer 302 to become a transmitted light I.sub.1. The transmitted light I.sub.1 is partly scattered on the surface of the substrate 301 to become scattered lights K.sub.1, K.sub.2, K.sub.3. . . K.sub.n, with the remainder being regularly reflected to become a reflected light R.sub.2, a part of which goes outside as an emitted light R.sub.3. Thus, since the reflected light R.sub.1 and the emitted light R.sub.3 which is an interferable component remain, it is not yet possible to extinguish the interference fringe pattern.
On the other hand, if diffusibility of the surface of the substrate 301 is increased in order to prevent multiple reflections within the light receiving layer 302 through prevention of interference, light will be diffused within the light receiving layer 302 to cause halation, whereby resolution is disadvantageously lowered.
Particularly, in a light receiving member of a multi-layer structure, as shown in FIG. 4, even if the surface of the substrate 401 may be irregularly roughened, the reflected light R.sub.2 from the first layer 402, the reflected light R.sub.1 from the second layer 403 and the regularly reflected light R.sub.3 from the surface of the substrate 401 are interfered with each other to form an interference fringe pattern depending on the respective layer thicknesses of the light receiving member. Accordingly, in a light receiving member of a multi-layer structure, it was impossible to completely prevent appearance of interference fringes by irregularly roughening the surface of the substrate 401.
In the case of irregularly roughening the substrate surface according to the method such as sand blasting, etc., the roughness will vary so much from lot to lot, and there is also nonuniformity in roughness even in the same lot, and therefore production control could be done with inconvenience. In addition, relatively large projections with random distributions are frequently formed, hence causing local breakdown of the light receiving layer during charging treatment.
On the other hand, in the case of simply roughening the surface of the substrate 501 regularly, as shown in FIG. 5, since the light-receiving layer 502 is deposited along the uneven shape of the surface of the substrate 501, the slanted plane of the unevenness of the substrate 501 becomes parallel to the slanted plane of the unevenness of the light receiving layer 502.
Accordingly, for the incident light on that portion, 2nd.sub.1 =m.lambda. or 2nd.sub.1 =(m+1/2).lambda. holds, to make it a light portion or a dark portion. Also, in the light receiving layer as a whole, since there is nonuniformity in which the maximum difference among the layer thicknesses d.sub.1, d.sub.2, d.sub.3 and d.sub.4 of the light receiving layer is .lambda./2n or more, there appears a light and dark fringe pattern.
Thus, it is impossible to completely extinguish the interference fringe pattern by only roughening regularly the surface of the substrate 501.
Also, in the case of depositing a light receiving layer of a multi-layer structure on the substrate, the surface of which is regularly roughened, in addition to the interference between the regularly reflected light from the substrate surface and the reflected light from the light receiving layer surface as explained for light receiving member of a single layer structure in FIG. 3, interferences by the reflected lights from the interfaces between the respective layers participate to make the extent of appearance of interferance fringe pattern more complicated than in the case of the light receiving member of a single layer structure.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a novel light-receiving member sensitive to light, which has cancelled the drawbacks as described above.
Another object of the present invention is to provide a light-receiving member which is suitable for image formation by use of a coherent monochromatic light and also easy in production management.
Still another object of the present invention is to provide a light-receiving member which can cancel the interference fringe pattern appearing during image formation and appearance of speckles on reversal developing at the same time and completely.
Still another object of the prevent invention is to provide a light-receiving member which is high in dielectric strength and photosensitivity and excellent in electrophotographic characteristics.
It is also another object of the present invention to provide a light-receiving member, which can provide an image of high quality which is high in density, clear in halftone and high in resolution and is suitable for electrophotography.
Still another object of the present invention is to provide a light-receiving member comprising a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided on a substrate successively from the substrate side, said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic illustration of interference fringe in general;
FIG. 2 is a schematic illustration of interference fringe in the case of a multi-layer light-receiving member;
FIG. 3 is a schematic illustration of interference fringe by scattered light;
FIG. 4 is a schematic illustration of interference fringe by scattered light in the case of a multi-layer light-receiving member;
FIG. 5 is a schematic illustration of interference fringe in the case where the interfaces of respective layers of a light-receiving member are parallel to each other;
FIG. 6 (A), (B), (C) and (D) are schematic illustrations of no appearance of interference fringe in the case of non-parallel interfaces between respective layers of a light-receiving member;
FIG. 7 (A), (B) and (C) are schematic illustration of comparison of the reflected light intensity between the case of parallel interfaces and non-parallel interfaces between the respective layers of a light-receiving member;
FIG. 8 is a schematic illustration of no appearance of interference fringe in the case of non-parallel interfaces between respective layers;
FIG. 9 (A), (B) and (C) are schematic illustrations of the surface condition of typical substrates;
FIG. 10 is a schematic illustration of the layer constitution of a light-receiving member;
FIGS. 11 through 19 are schematic illustrations of the distribution states of germanium atoms in the first layer;
FIG. 20 and FIG. 63 are schematic illustrations of the vacuum deposition devices for preparation of the light-receiving members employed in Examples;
FIG. 21, FIG. 64 and FIG. 65 are schematic illustrations of the surface states of the aluminum substrates employed in Examples;
FIGS. 22 through 25, FIGS. 36 through 42, FIGS. 52 through 59, FIGS. 60 through 62, FIGS. 66 through FIGS. 80 are schematic illustrations of the changes in gas flow rates of the respective gases in Examples;
FIG. 26 is a schematic illustration of the image exposure device employed in Examples;
FIGS. 27 through 35 are schematic illustrations of the distribution state of the substance (C) in the layer region (PN); and
FIGS. 43 through 51 are schematic illustrations of the distribution states of the atoms (OCN) in the layer region (OCN).

DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring now to the accompnaying drawings, the present invention is to be described in detail.
FIG. 6 is a schematic illustration for explanation of the basic principle of the present invention.
In the present invention, on a substrate (not shown) having a fine uneven shape smaller than the resolution required for the device, a light-receiving layer of a multi-layer constitution is provided along the uneven slanted plane, with the thickness of the second layer 602 being continuously changed from d.sub.5 to d.sub.6, as shown enlarged in a part of FIG. 6, and therefore the interface 603 and the interface 604 have respective gradients. Accordingly, the coherent light incident on this minute portion (short range region ) l [indicated schematically in FIG. 6 (C), and its enlarged view shown in FIG. 6 (A)]undergoes interference at said minute portion l to form a minute interference fringe pattern.
Also, as shown in FIG. 7, when the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 are non-parallel to each other, the reflected light R.sub.1 and the emitted lgiht R.sub.3 are different in direction of progress from each other relative to the incident light I.sub.0 as shown in FIG. 7 (A), and therefore the degree of interference will be reduced as compared with the case (FIG. 7 (B)) when the interfaces 703 and 704 are parallel to each other.
Accordingly, as shown in FIG. 7 (C), as compared with the case "(B)" where a pair of the interfaces are in parallel relation, the difference in lightness and darkness in the interference fringe pattern becomes negligibly small even if interfered, if any, in the non-parallel case "(A)".
The same is the case, as shown in FIG. 6, even when the layer thickness of the layer 602 may be macroscopically ununiform (d.sub.7 .noteq.d.sub.8), and therefore the incident light quantity becomes uniform all over the layer region (see FIG. 6 (D)).
To describe about the effect of the present invention when coherent light is transmitted from the irradiation side to the first layer in the case of a light-receiving layer of a multi-layer structure, reflected lights R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 exsit in connection with the incident light I.sub.0. Accordingly, at the respective layers, the same phenomenon as described with reference to FIG. 7 occurs.
Therefore, when considered for the light-receiving layer as a whole, interference occurs as a synergetic effect of the respective layers and, according to the present invention, appearance of interference can further be prevented as the number of layers constituting the light-receiving layer is increased.
The interference fringe occurring within the minute portion cannot appear on the image, because the size of the minute portion is smaller than the spot size of the irradiated light, namely smaller than the resolution limit. Further, even if appeared on the image, there is no problem at all, since it is less than resolving ability of the eyes.
In the present invention, the slanted plane of unevenness should desirably be mirror finished in order to direct the reflected light assuredly in one direction.
The size l (one cycle of uneven shape) of the minute portion suitable for the present invention is l.ltoreq.L, wherein L is the spot size of the irradiation light.
Further, in order to accomplish more effectively the objects of the present invention, the layer thickness difference (d.sub.5-d.sub.6) at the minute portion 1 should desirably be as follows:
d.sub.5 -d.sub.6 .gtoreq..lambda./2n (where .lambda. is the wavelength of the irradiation light and n is the refractive index of the second layer 602).
In the present invention, within the layer thickness of the minute portion l (hereinafter called as "minute column") in the light-receiving layer of a multi-layer structure, the layer thicknesses of the respective layers are controlled so that at least two interfaces between layers may be in non-parallel relationship, and, provided that this condition is satisfied, any other pair of two interfaces between layers may be in parallel relationship within said minute column.
However, it is desirable that the layers forming parallel interfaces should be formed to have uniform layer thicknesses so that the difference in layer thickness at any two positions may be not more than:
.lambda./2n (n: refractive index of the layer).
For formation of the respective layers of the first layer and the second layer constituting the light-receiving layer, in order to accomplish more effectively and easily the objects of the present invention, the plasma chemical vapor deposition method (PCVD method), the optical CVD method and thermal CVD method can be employed, because the layer thickness can accurately be controlled on the optical level thereby.
The unevenness to be provided on the substrate surface can be formed by fixing a bite having a V-shaped cutting blade at a predetermined position on a cutting working machine such as milling machine, lathe, etc., and cut working accurately the substrate surface by, for example, moving regularly in a certain direction while rotating a cylindrical substrate according to a program previously designed as desired, thereby forming to a desired unevenness shape, pitch and depth. The reverse-V-shaped linear projection produced by the unevenness formed by such a cutting working has a spiral structure with the center axis of the cylindrical substrate as its center. The spiral structure of the reverse-V-shaped projection may be made into a mutiple spiral structure such as double or triple structure or a crossed spiral structure.
Alternatively, a straight line structure along the center axis may also be introduced in addition to the spiral structure.
The shape of the longitudinal section of the protruded portion of the unevenness provided on the substrate surface is made reverse-V-shape in order to ensure managed ununiformization of layer thickness within minute columns of respective layers and good adhesion as well as desired electrical contact between the substrate and the layer provided directly on said substrate, and it should preferably be made as shown in FIG. 9 as isosceles triangle, a right triangle or a scalene triangle. Of these shapes, an isosceles triangle and a right triangle are preferred.
In the present invention, the respective dimensions of the unevenness provided on the substrate surface under managed condition are set so as to accomplish effectively the objects of the present invention in view of the following points.
More specifically, in the first place, the A-Si layer constituting the light receiving layer is sensitive to the structure of the surface on which the layer formation is effected, and the layer quality will be changed greatly depending on the surface condition.
Accordingly, it is desirable to set dimensions of the unevenness to be provided on the substrate surface so that lowering in layer quality of the A-Si layer may not be brought about.
Secondly, when there is extreme unevenness on the free surface of the light-receiving layer, cleaning cannot frequently be performed completely in cleaning step after image formation.
Further, in case of practicing blade cleaning, there is involved the problem that the blade will be damaged more earlier.
As the result of investigations of the problems is layer deposition as described above, problems in process of electrophotography and the conditions for prevention of interference fringe pattern, it has been found that the pitch at the recessed portion on the substrate surface should preferably be 500 .mu.m to 0.3 .mu.m, more preferably 200 .mu.m to 1 .mu.m, most preferably 50 .mu.m to 5 .mu.m.
It is also desirable that the maximum depth of the recessed portion should preferably be made 0.1 .mu.m to 5 .mu.m, more preferably 0.3 .mu.m to 3 .mu.m, most preferably 0.6 .mu.m to 2 .mu.m. When the pitch and the maximum depth of the recessed portions on the substrate surface are within the ranges as specified above, the gradient of the slanted plane at the recessed portion (or linear projection) may preferably be 1.degree. to 20.degree., more preferably 3.degree. to 15.degree., most preferably 4.degree. to 10.degree..
On the other hand, the maximum of the difference in the layer thickness based on such an uniformness in layer thickness of the respective layers formed on such a substrate should preferably be made 0.1 .mu.m to 2 .mu.m within the same pitch, more preferably 0.1 .mu.m to 1.5 .mu.m, most preferably 0.2 .mu.m to 1 .mu.m.
Further, the light-receiving layer in the light-receiving member of the present invention has a multi-layer structure comprising a first layer constituted of an amorphous material containing silicon atoms and germanium atoms and a second layer constituted of an amorphous material containing silicon atoms and exhibiting photoconductivity provided on a substrate successively from the substrate side, and therefore can exhibit very excellent electrical, optical and photoconductive characteristics, dielectric strength as well as good use environmental characteristics.
In particular, when it is applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation at all, with its electrical properties being stable with high sensitivity and high SN ratio, also excellent in light fatigue resistance and repeated use characteristics, whereby it is possible to obtain repeatedly and stably images of high quality with high density, clear halftone and high resolution.
Further, the light-receiving member of the present invention is high in photosensitivity over the all visible light regions, particularly in photosensitivity to the light of longer wavelength region and is therefore excellent in matching to semiconductor laser and also rapid in light response.
Referring now the drawings, the light-receiving member of the present invention is to be described in detail.
FIG. 10 shows a schematic sectional view for illustration of the layer structure of an embodiment of the light-receiving member of the present invention.
The light-receiving member 1004 as shown in FIG. 10 has a light-receiving layer 1000 on a substrate for light-receiving member 1001, said light-receiving layer 1000 having a free surface 1005 on one end surface.
The light-receiving layer 1000 has a layer structure constituted of a first layer (G) 1002 comprising an amorphous material containing silicon atoms and germanium atoms and, if desired, hydrogen atoms (H) and/or halogen atoms (X) (hereinafter abbreviated as "A-SiGe(H,X)") and a second layer (S) 1003 comprising A-Si containing, if desired, hydrogen atoms (H) and/or halogen atoms (X) (hereinafter abbreviated as A-Si(H,X)) and exhibiting photoconductivity laminated successively from the substrate 1001 side.
The germanium atoms contained in the first layer (G) 1002 may be contained so that the distribution state may be uniform within the first layer (G), or they can be contained continuously in the layer thickness direction in said first layer (G) 1002, being more enriched at the substrate 1001 side toward the side opposite to the side where said substrate 1001 is provided (the surface 1005 side of the light-receiving layer 1001).
When the distribution state of the germanium atoms contained in the first layer (G) is ununiform in the layer thickness direction, it is desirable that the distribution state should be made uniform in the interplanar direction in parallel to the surface of the substrate.
In the present invention, in the second layer (S) provided on the first layer (G), no germanium atoms is contained and by forming a light-receiving layer to such a layer structure, the light-receiving member obtained can be excellent in photosensitivity to the light with wavelengths of all the regions from relatively shorter wavelength to relatively longer wavelength, including visible light region.
Also, when the distribution state of germanium atoms in the first layer (G) is ununiform in the layer thickness direction, the germanium atoms are distributed continuously throughout the whole layer region while giving a change in distribution concentration C of the germanium atoms in the layer thickness direction which is decreased from the substrate toward the second layer (S), and therefore affinity between the first layer (G) and the second layer (S) is excellent. Also, as described as hereinafter, by extremely increasing the distribution concentration C of germanium atoms at the end portion on the substrate side extremely great, the light on the longer wavelength side which cannot substantially be absorbed by the second layer (S) can be absorbed in the first layer (G) substantially completely, when employing a semiconductor laser, whereby interference by reflection from the substrate surface can be prevented.
Also, in the light-receiving member of the present invention, the respective amorphous materials constituting the first layer (G) and the second layer (S) have the common constituent of silicon atoms, and therefore chemical stability can sufficiently be ensured at the laminated interface.
FIGS. 11 through 19 show typical examples of distribution in the layer thickness direction of germanium atoms contained in the first layer region (G) of the light-receiving member in the present invention.
In FIGS. 11 through 19, the abscissa indicates the content C of germanium atoms and the ordinate the layer thickness of the first layer (G), t.sub.B showing the position of the end surface of the first layer (G) on the substrate side and t.sub.T the position of the end surface of the first layer (G) on the side opposite to the substrate side. That is, layer formation of the first layer (G) containing germanium atoms proceeds from the t.sub.B side toward the t.sub.T side.
In FIG. 11, there is shown a first typical embodiment of the depth profile of germanium atoms in the layer thickness direction contained in the first layer (G).
In the embodiment as shown in FIG. 11, from the interface position t.sub.B at which the surface, on which the first layer (G) containing germanium atoms is to be formed, comes into contact with the surface of said first layer (G) to the position t.sub.1, germanium atoms are contained in the first layer (G) formed, while the distribution concentration C of germanium atoms taking a constant value of C.sub.1, the concentration being gradually decreased from the concentration C.sub.2 continuously from the position t.sub.1 to the interface position t.sub.T. At the interface position t.sub.T, the distribution concentration C of germanium atoms is made C.sub.3.
In the embodiment shown in FIG. 12, the distribution concentration C of germanium atoms contained is decreased gradually and continuously from the position t.sub.B to the position t.sub.T from the concentration C.sub.4 until it becomes the concentration C.sub.5 at the position t.sub.T.
In case of FIG. 13, the distribution concentration C of germanium atoms is made constant as C.sub.6 at the position t.sub.B, gradually decreased continuously from the position t.sub.2 to the position t.sub.T, and the concentration C is made substantially zero at the position t.sub.T (substantially zero herein means the content less than the detectable limit).
In case of FIG. 14, germanium atoms are decreased gradually and continuously from the position t.sub.B to the position t.sub.T from the concentration C.sub.8, until it is made substantially zero at the position t.sub.T .
In the embodiment shown in FIG. 15, the distribution concentration C of germanium atoms is constantly C.sub.9 between the position t.sub.B and the position t.sub.3, and it is made C.sub.10 at the position t.sub.T . Between the position t.sub.3 and the position t.sub.T, the concentration C is decreased as a first order function from the position t.sub.3 to the position t.sub.T.
In the embodiment shown in FIG. 16, there is formed a depth profile such that the distribution concentration C takes a constant value of C.sub.11 from the position t.sub.B to the position t.sub.4, and is decreased as a first order function from the concentration C.sub.12 to the concentration C.sub.13 from the position t.sub.4 to the position t.sub.T.
In the embodiment shown in FIG. 17, the distribution concentration C of germanium atoms is decreased as a first order function from the concentration C.sub.14 to zero from the position t.sub.B to the position t.sub.T.
In FIG. 18, there is shown an embodiment, where the distribution concentration C of germanium atoms is decreased as a first order function from the concentration C.sub.15 to C.sub.16 from the position t.sub.B to t.sub.5 and made constantly at the concentration C.sub.16 between the position t.sub.5 and t.sub.T.
In the embodiment shown in FIG. 19, the distribution concentration C of germanium atoms is at the concentration C.sub.17 at the position t.sub.B, which concentration C.sub.17 is initially decreased gradually and abruptly near the position t.sub.6 to the position t.sub.6, until it is made the concentration C.sub.18 at the position t.sub.6.
Between the position t.sub.6 and the position t.sub.7, the concentration is initially decreased abruptly and thereafter gradually, until it is made the concentration C.sub.19 at the position t.sub.7. Between the position t.sub.7 and the position t.sub.8, the concentration is decreased very gradually to the concentration C.sub.20 at the position t.sub.8. Between the position t.sub.8 and the position t.sub.T, the concentration is decreased along the curve having a shape as shown in the Figure from the concentration C.sub.20 to substantially zero.
As described above about some typical examples of depth profiles of germanium atoms contained in the first layer (G) in the direction of the layer thickness by referring to FIGS. 11 through 19, when the distribution state of germanium atoms is ununiform in the layer thickness direction, the first layer (G) is provided desirably in a depth profile so as to have a portion enriched in distribution concentration C of germanium atoms on the substrate side and a portion depleted in distribution concentration C of germanium atoms considerably lower than that of the substrate side on the interface t.sub.T side.
The first layer (G) constituting the light-receiving member in the present invention is desired to have a localized region (A) containing germanium atoms at a relatively higher concentration on the substrate side as described above.
In the present invention, the localized region (A), as explained in terms of the symbols shown in FIG. 11 through FIG. 19, may be desirably provided within 5.mu. from the interface position t.sub.B.
In the present invention, the above localized region (A) may be made to be identical with the whole of the layer region (L.sub.T) on the interface position t.sub.B to the thickness of 5 .mu., or alternatively a part of the layer region (L.sub.T).
It may suitably be determined depending on the characteristics required for the light-receiving layer to be formed, whether the localized region (A) is made a part or whole of the layer region (L.sub.T).
The localized region (A) may preferably be formed according to such a layer formation that the maximum value Cmax of the concentrations of germanium atoms in a distribution in the layer thickness direction may preferably be 1000 atomic ppm or more, more preferably 5000 atomic ppm or more, most preferably 1.times.10.sup.4 atomic ppm or more based on silicon atoms.
That is, according to the present invention, it is desirable that the layer region (G) containing germanium atoms is formed so that the maximum value Cmax of the distribution concentration C may exist within a layer thickness of 5.mu. from the substrate side (the layer region within 5.mu. thickness from t.sub.B).
In the present invention, the content of germanium atoms in the first layer (G), which may suitably be determined as desired so as to acheive effectively the objects of the present invention, may preferably be 1 to 9.5.times.10.sup.5 atomic ppm, more preferably 100 to 8.times.10.sup.5 atomic ppm, most preferably 500 to 7.times.10.sup.5 atomic ppm.
In the present invention, the layer thickness of the first layer (G) and the thickness of the second layer (S) are one of the important factors for accomplishing effectively the objects of the present invention, and therefore sufficient care should desirably be paid in designing of the light-receiving member so that desirable characteristics may be imparted to the light-receiving member formed.
In the present invention, the layer thickness T.sub.B of the first layer (G) may preferably be 30 .ANG. to 50.mu., more preferably 40 .ANG. to 40.mu., most preferably 50 .ANG. to 30.mu..
On the other hand, the layer thickness T of the second layer (S) may be preferably 0.5 to 90.mu., more preferably 1 to 80.mu., most preferably 2 to 50.mu..
The sum of the above layer thicknesses T and T.sub.B, namely (T+T.sub.B) may be suitably determined as desired in designing of the layers of the light-receiving member, based on the mutual organic relationship between the characteristics required for both layer regions and the characteristics required for the whole light-receiving layer.
In the light-receiving member of the present invention, the numerical range for the above (T.sub.B +T) may generally be from 1 to 100.mu., preferably 1 to 80.mu. most preferably 2 to 50.mu..
In a more preferred embodiment of the present invention, it is preferred to select the numerical values for respective thicknesses T.sub.B and T as mentioned above so that the relation of T.sub.B /T.ltoreq.1 may be satisfied.
In selection of the numerical values for the thicknesses T.sub.B and T in the above case, the values of T.sub.B and T should preferably be determined so that the relation T.sub.B /T.ltoreq.0.9, most preferably, T.sub.B /T.ltoreq.0.8, may be satisfied.
In the present invention, when the content of germanium atoms in the first layer (G) is 1.times.10.sup.5 atomic ppm or more, the layer thickness T.sub.B should desirably be made considerably thinner, preferably 30.mu. or less, more preferably 25.mu. or less, most preferably 20.mu. or less.
In the present invention, illustrative of halogen atoms (X), which may optionally be incorporated in the first layer (G) and the second layer (S) constituting the light-receiving layer, are fluorine, chlorine, bormine and iodine, particularly preferably fluorine and chlorine.
In the present invention, formation of the first layer (G) constituted of A-SiGe(H,X) may be conducted according to the vacuum deposition method utilizing discharging phenomenon, such as glow discharge method, sputtering method or ion-plating method. For example, for formation of the first layer (G) constituted of A-SiGe(H,X) according to the glow discharge method, the basic procedure comprises introducing a starting gas for Si supply capable of supplying silicon atoms (Si), a starting gas for Ge supply capable of supplying germanium atoms (Ge) optionally together with a starting gas for introduction of hydrogen atoms (H) and/or a starting gas for introduction of halogen atoms (X) into a deposition chamber which can be internally brought to a reduced pressure, and exciting glow discharge in said deposition chamber, thereby effecting layer formation on the surface of a substrate placed at a predetermined position while controlling the depth profile of germanium atoms according to a desired rate of change curve to form a layer constituent of A-SiGe (H,X). Alternatively, for formation according to the sputtering method, when carrying out sputtering by use of two sheets of targets of a target constituted of Si and a target constituted of Ge, or a target of a mixture of Si and Ge in an atmosphere of an inert gas such as Ar, He, etc. or a gas mixture based on these gases, a gas for introduction of hydrogen atoms (H) and/or a gas for introduction of halogen atoms (X) may be introduced, if desired, into a deposition chamber for sputtering.
The starting gas for supplying Si to be used in the present invention may include gaseous or gasifiable hydrogenated silicons (silanes) such as SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8, Si.sub.4 H.sub.10 and others as effective materials. In particular, SiH.sub.4 and Si.sub.2 H.sub.6 are preferred because of easiness in handling during layer formation and high efficiency for supplying Si.
As the substances which can be used as the starting gases for Ge supply, there may be effectively employed gaseous or gasifiable hydrogenated germanium such as GeH.sub.4, Ge.sub.2 H.sub.6, Ge.sub.3 H.sub.8, Ge.sub.4 H.sub.10, Ge.sub.5 H.sub.12, Ge.sub.6 H.sub.14, Ge.sub.7 H.sub.16, Ge.sub.8 H.sub.18, Ge.sub.9 H.sub.20, etc. In particular, GeH.sub.4, Ge.sub.2 H.sub.6 and Ge.sub.3 H.sub.8 are preferred because of easiness in handling during layer formation and high efficiency for supplying Ge.
Effective starting gases for introduction of halogen atoms to be used in the present invention may include a large number of halogenic compounds, as exemplified preferably by halogenic gases, halides, interhalogen compounds, or gaseous or gasifiable halogenic compounds such as silane derivatives substituted with halogens.
Further, there may also be included gaseous or gasifiable hydrogenated silicon compounds containing halogen atoms constituted of silicon atoms and halogen atoms as constituent elements as effective ones in the present invention.
Typical examples of halogen compounds preferably used in the present invention may include halogen gases such as of fluorine, chlorine, bromine or iodine, interhalogen compounds such as BrF, ClF, ClF.sub.3, BrF.sub.5, BrF.sub.3, IF.sub.3, IF.sub.7, ICl, IBr, etc.
As the silicon compounds containing halogen atoms, namely so called silane derivatives substituted with halogens, there may preferably be employed silicon halides such as SiF.sub.4, Si.sub.2 F.sub.6, SiCl.sub.4, SiBr.sub.4 and the like.
When the light-receiving member of the present invention is formed according to the glow discharge method by employment of such a silicon compound containing halogen atoms, it is possible to form the first layer (G) constituted of A-SiGe containing halogen atoms on a desired substrate without use of a hydrogenated silicon gas as the starting gas capable of supplying Si together with the starting gas for Ge supply.
In the case of forming the first layer (G) containing halogen atoms according to the glow discharge method, the basic procedure comprises introducing, for example, a silicon halide as the starting gas for Si supply, a hydrogenated germanium as the starting gas for Ge supply and a gas such as Ar, H.sub.2, He, etc. at a predetermined mixing ratio into the deposition chamber for formation of the first layer (G) and exciting glow discharge to form a plasma atmosphere of these gases, whereby the first layer (G) can be formed on a desired substrate. In order to control the ratio of hydrogen atoms incorporated more easily, hydrogen gas or a gas of a silicon compound containing hydrogen atoms may also be mixed with these gases in a desired amount to form the layer.
Also, each gas is not restricted to a single species, but multiple species may be available at any desired ratio.
For formation of the first layer (G) comprising A-SiGe(H,X) according to the reactive sputtering method or the ion plating method, for example, in the case of the sputtering method, two sheets of a target of Si and a target of Ge or a target of Si and Ge is employed and subjected to sputtering in a desired gas plasma atmosphere. In the case of the ion-plating method, for example, a vaporizing source such as a polycrystalline silicon or a single crystalline silicon and a polycrystalline germanium or a single crystalline germanium may be placed as vaporizing source in an evaporating boat, and the vaporizing source is heated by the resistance heating method or the electron beam method (EB method) to be vaporized, and the flying vaporized product is permitted to pass through a desired gas plasma atmosphere.
In either case of the sputtering method and the ion-plating method, introduction of halogen atoms into the layer formed may be performed by introducing the gas of the above halogen compound or the above silicon compound containing halogen atoms into a deposition chamber and forming a plasma atmosphere of said gas.
On the other hand, for introduction of hydrogen atoms, a starting gas for introduction of hydrogen atoms, for example, H.sub.2 or gases such as silanes and/or hydrogenated germanium as mentioned above, may be introduced into a deposition chamber for sputtering, followed by formation of the plasma atmosphere of said gases.
In the present invention, as the starting gas for introduction of halogen atoms, the halides or halo-containing silicon compounds as mentioned above can effectively be used. Otherwise, it is also possible to use effectively as the starting material for formation of the first layer (G) gaseous or gasifiable substances, including halides containing hydrogen atom as one of the constituents, e.g. hydrogen halide such as HF, HCl, HBr, HI, etc.; halo-substituted hydrogenated silicon such as SiH.sub.2 F.sub.2, siH.sub.2 I.sub.2, SiH.sub.2 Cl.sub.2, SiHCl.sub.3, SiH.sub.2 Br.sub.2, SiHBr.sub.3, etc.; hydrogenated germanium halides such as GeHF.sub.3, GeH.sub.2 F.sub.2, GeH.sub.3 F, GeHCl.sub.3, GeH.sub.2 Cl.sub.2, GeH.sub.3 Cl, GeHBr.sub.3, GeH.sub.2 Br.sub.2, GeH.sub.3 Br, GeHI.sub.3, GeH.sub.2 I.sub.2, GeH.sub.3 I, etc.; germanium halides such as GeF.sub.4, GeCl.sub.4, GeBr.sub.4, GeI.sub.4, GeF.sub.2, GeCl.sub.2, GeBr.sub.2, GeI.sub.2, etc.
Among these substances, halides containing halogen atoms can preferably be used as the starting material for introduction of halogens, because hydrogen atoms, which are very effective for controlling electrical or photoelectric characteristics, can be introduced into the layer simultaneously with introduction of halogen atoms during formation of the first layer (G).
For introducing hydrogen atoms structurally into the first layer (G), other than those as mentioned above, H.sub.2 or a hydrogenated silicon such as SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8, Si.sub.4 H.sub.10, etc. together with germanium or a germanium compound for supplying Ge, or a hydrogenated germanium such as GeH.sub.4, Ge.sub.2 H.sub.6, Ge.sub.3 H.sub.8, Ge.sub.4 H.sub.10, Ge.sub.5 H.sub.12, Ge.sub.6 H.sub.14, Ge.sub.7 H.sub.16, Ge.sub.8 H.sub.18, Ge.sub.9 H.sub.20, etc. together with silicon or a silicon compound for supplying Si can be permitted to co-exist in a deposition chamber, followed by excitation of discharging.
According to a preferred embodiment of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) or the sum of the amounts of hydrogen atoms and halogen atoms (H+X) to be contained in the first layer (G) constituting the light-receiving layer to be formed should preferably be 0.01 to 40 atomic %, more preferably 0.05 to 30 atomic %, most preferably 0.1 to 25 atomic %.
For controlling the amount of hydrogen atoms (H) and/or halogen atoms (X) to be contained in the first layer (G), for example, the substrate temperature and/or the amount of the starting materials used for incorporation of hydrogen atoms (H) or halogen atoms (X) to be introduced into the deposition device system, discharging power, etc. may be controlled.
In the present invention, for formation of the second layer (S) constituted of A-Si(H,X), the starting materials (I) for formation of the first layer (G), from which the starting materials for the starting gas for supplying Ge are omitted, are used as the starting materials (II) for formation of the second layer (S), and layer formation can be effected following the same procedure and conditions as in formation of the first layer (G).
More specifically, in the present invention, formation of the second layer region (S) constituted of a-Si(H,X) may be carried out according to the vacuum deposition method utilizing discharging phenomenon such as the glow discharge method, the sputtering method or the ion-plating method. For example, for formation of the second layer (S) constituted of A-Si(H,X) according to the glow discharge method, the basic procedure comprises introducing a starting gas for Si supply capable of supplying silicon atoms (Si) as described above, optionally together with starting gases for introduction of hydrogen atoms (H) and/or halogen atoms (X), into a deposition chamber which can be brought internally to a reduced pressure and exciting glow discharge in said deposition chamber, thereby forming a layer comprising A-Si(H,X) on a desired substrate placed at a predetermined position. Alternatively, for formation according to the sputtering method, gases for introduction of hydrogen atoms (H) and/or halogen atoms (X) may be introduced into a deposition chamber when effecting sputtering of a target constituted of Si in an inert gas such as Ar, He, etc. or a gas mixture based on these gases.
In the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) or the sum of the amounts of hydrogen atoms and halogen atoms (H+X) to be contained in the second layer (S) constituting the light-receiving layer to be formed should preferably be 1 to 40 atomic %, more preferably 5 to 30 atomic %, most preferably 5 to 25 atomic %.
In the light-receiving member 1004, by incorporating a substance (C) for controlling conductivity in at least the first layer (G) 1002 and/or the second layer (S) 1003, desired conductivity characteristics can be given to the layer containing said substance (C).
In this case, the substance (C) for controlling conductivity may be contained throughout the whole layer region in the layer containing the substance (C) or contained locally in a part of the layer region of the layer containing the substance (C).
Also, in the layer region (PN) containing said substance (C), the distribution state of said substance (C) in the layer thickness direction may be either uniform or nonuniform, but desirably be made uniform within the plane in parallel to the substrate surface. When the distribution state of the substance (C) is nonuniform in the layer thickness direction, and when the substance (C) is to be incorporated in the whole layer region of the first layer (G), said substance (C) is contained in the first layer (G) so that it may be more enriched on the substrate side of the first layer (G).
Thus, in the layer region (PN), when the distribution concentration in the layer thickness direction of the above substance (C) is made nonuniform, optical and electrical junction at the contacted interface with other layers can further be improved.
In the present invention, when the substance (C) for controlling conductivity is incorporated in the first layer (G) so as to be locally present in a part of the layer region, the layer region (PN) in which the substance (C) is to be contained is provided as an end portion layer region of the first layer (G), which is to be determined case by case suitably as desired depending on.
In the present invention, when the above substance (C) is to be incorporated in the second layer (S), it is desirable to incorporate the substance (C) in the layer region including at least the contacted interface with the first layer (G).
When the substance (C) for controlling conductivity is to be incorporated in both the first layer (G) and the second layer (S), it is desirable that the layer region containing the substance (C) in the first layer (G) and the layer region containing the substance (C) in the second layer (S) may contact each other.
Also, the above substance (C) contained in the first layer (G) may be either the same as or different from that contained in the second layer (S), and their contents may be either the same or different.
However, in the present invention, when the above substance (C) is of the same kind in the both layers, it is preferred to make the content in the first layer (G) sufficiently greater, or alternatively to incorporate substances (C) with different electrical characteristics in respective layers desired.
In the present invention, by incorporating a substance (C) for controlling conductivity in at least the first layer (G) and/or the second layer (S) constituting the light-receiving layer, conductivity of the layer region containing the substance (C) [which may be either a part or the whole of the layer region of the first layer (G) and/or the second layer (S)] can be controlled as desired. As a substance (C) for controlling conductivity characteristics, there may be mentioned so called impurities in the field of semiconductors. In the present invention, there may be included p-type impurities giving p-type condutivity characteristics and n-type impurities and/or giving n-type conductivity characteristics to A-Si(H,X) and/or A-SiGe(H,X) constituting the light receiving layer to be formed.
More specifically, there may be mentioned as p-type impurities atoms belonging to the group III of the periodic table (Group III atoms), such as B (boron), Al(aluminum), Ga(gallium), In(indium), Tl(thallium), etc., particularly preferably B and Ga.
As n-type impurities, there may be included the atoms belonging to the group V of the periodic table, such as P (phosphorus), As (arsenic), Sb (antimony), Bi (bismuth), etc., particularly preferably P and As.
In the present invention, the content of the substance (C) for controlling conductivity in the layer region (PN) may be suitably be determined depending on the conductivity required for said layer region (PN), or when said layer region (PN) is provided in direct contact with the substrate, the organic relationships such as relation with the characteristics at the contacted interface with the substrate, etc.
Also, the content of the substance (C) for controlling conductivity is determined suitably with due considerations of the relationships with characteristics of other layer regions provided in direct contact with said layer region or the characteristics at the contacted interface with said other layer regions.
In the present invention, the content of the substance (C) for controlling conductivity contained in the layer region (PN) should preferably be 0.01 to 5.times.10.sup.4 atomic ppm, more preferably 0.5 to 1.times.10.sup.4 atomic ppm, most preferably 1 to 5.times.10.sup.3 atomic ppm.
In the present invention, by making the content of said substance (C) in the layer region (PN) preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more, most preferably 100 atomic ppm or more, for example, in the case when said substance (C) to be incorporated is a p-type impurity as mentioned above, migration of electrons injected from the substrate side into the light-receiving layer can be effectively inhibited when the free surface of the light-receiving layer is subjected to the charging treatment to .sym. polarity. On the other hand, when the substance to be incorporated is a n-type impurity, migration of positive holes injected from the substrate side into the light-receiving layer may be effectively inhibited when the free surface of the light-receiving layer is subjected to the charging treatment to .crclbar. polarity.
In the case as mentioned above, the layer region (Z) at the portion excluding the above layer region (PN) under the basic constitution of the present invention as described above may contain a substance for controlling conductivity of the other polarity, or a substance for controlling conductivity having characteristics of the same polarity may be contained therein in an amount by far smaller than that practically contained in the layer region (PN).
In such a case, the content of the substance (C) for controlling conductivity contained in the above layer region (Z) can be determined adequately as desired depending on the polarity or the content of the substance contained in the layer region (PN), but it is preferably 0.001 to 1000 atomic ppm, more preferably 0.05 to 500 atomic ppm, most preferably 0.1 to 200 atomic ppm.
In the present invention, when the same kind of a substance for controlling conductivity is contained in the layer region (PN) and the layer region (Z), the content in the layer region (Z) should preferably be 30 atomic ppm or less.
In the present invention, it is also possible to provide a layer region containing a substance for controlling conductivity having one polarity and a layer region containing a substance for controlling conductivity having the other polarity in direct contact with each other, thus providing a so called depletion layer at said contact region.
In short, for example, a layer containing the aforesaid p-type impurity and a layer region containing the aforesaid n-type impurity are provided in the light-receiving layer in direct contact with each other to form the so called p-n junction, whereby a depletion layer can be provided.
FIGS. 27 through 35 show typical examples of the depth profiles in the layer thickness direction of the substance (C) contained in the layer region (PN) in the light-receiving layer of the present invention. In each of these Figures, representations of layer thickness and concentration are shown in rather exaggerated forms for illustrative purpose, since the difference between respective Figures will be indistinct if represented by the real values as such, and it should be understood that these Figures are schematic in nature. As practical distribution, the values of ti (1.ltoreq.i.ltoreq.9) or Ci (1.ltoreq.i.ltoreq.17) should be chosen so as to obtain desired distribution concentration lines, or values obtained by multiplying the distribution curve as a whole with an appropriate coefficient should be used.
In FIGS. 27 through 35, the abscissa shows the distribution concentration C of the substance (C), and the ordinate the layer thickness of the layer region (PN), t.sub.B indicating the position of the end surface on the substrate side of the layer region (G) and t.sub.T the position of the end surface on the side opposite to the substrate side. Thus, layer formation of the layer region (PN) containing the substance (C) proceeds from the t.sub.B side toward the t.sub.T side.
FIG. 27 shows a first typical example of the depth profile of the substance (C) in the layer thickness direction contained in the layer region (PN).
In the embodiment shown in FIG. 27, from the interface position t.sub.B where the surface at which the layer region (PN) containing the substance (C) contacts the surface of said layer (G) to the position t.sub.1, the substance (C) is contained in the layer region (PN) formed while the distribution concentration C of the substance (C) taking a constant value of C.sub.1, and the concentration is gradually decreased from the concentration C.sub.2 continuously from the position t.sub.1 to the interface position t.sub.T. At the interface position t.sub.T, the distribution concentration C of the substance (C) is made substantially zero (here substantially zero means the case of less than detectable limit).
In the embodiment shown in FIG. 28, the distribution concentration C of the substance (C) contained is decreased from the position t.sub.B to the position t.sub.T gradually and continuously from the concentration C.sub.3 to the concentration C.sub.4 at t.sub.T.
In the case of FIG. 29, from the position t.sub.B to the position t.sub.2, the distribution concentration C of the substance (C) is made constantly at C.sub.5, while between the position t.sub.2 and the position t.sub.T, it is gradually and continuously decreased, until the distribution concentration is made substantially zero at the position t.sub.T.
In the case of FIG. 30, the distribution concentration C of the substance (C) is first decreased continuously and gradually from the concentration C.sub.6 from the position t.sub.B to the position t.sub.3, from where it is abruptly decreased to substantially zero at the position t.sub.T.
In the embodiment shown in FIG. 31, the distribution concentration of the substance (C) is constantly C.sub.7 between the position t.sub.B and the position t.sub.T, and the distribution concentration is made zero at the position t.sub.T, Between the t.sub.4 and the position t.sub.T, the distribution concentration C is decreased as a first order function from the position t.sub.4 to the position t.sub.T.
In the embodiment shown in FIG. 32, the distribution concentration C takes a constant value of C.sub.8 from the position t.sub.B to the position t.sub.5, while it was decreased as a first order function from the concentration C.sub.9 to the concentration C.sub.10 from the position t.sub.5 to the position t.sub.T.
In the embodiment shown in FIG. 33, from the position t.sub.B to the position t.sub.T, the distribution concentration C of the substance (C) is decreased continuously as a first order function from the concentration C.sub.11 to zero.
In FIG. 34, there is shown an embodiment, in which, from the position t.sub.B to the position t.sub.6, the distribution concentration C of the substance C is decreased as a first order function from the concentration C.sub.12 to the concentration C.sub.13, and the concentration is made a constant value of C.sub.13 between the position t.sub.6 and the position t.sub.T.
In the embodiment shown in FIG. 35, the distribution concentration C of the substance (C) is C.sub.14 at the position t.sub.B, which is gradually decreased initially from C.sub.14 and then abruptly near the position t.sub.7, where it is made C.sub.15 at the position t.sub.7.
Between the position t.sub.7 and the position t.sub.8, the concentration is initially abruptly decreased and then moderately gradually, until it becomes C.sub.16 at the position t.sub.8, and between the position t.sub.8 and the position t.sub.9, the concentration is gradually decreased to reach C.sub.17 at the position t.sub.9. Between the position t.sub.9 and the position t.sub.T, the concentration is decreased from C.sub.17, following the curve with a shape as shown in Figure, to substantially zero.
As described above by referring to some typical examples of depth profiles in the layer thickness direction of the substance (C) contained in the layer region (PN) shown FIGS. 27 through 35, it is desirable in the present invention that a depth profile of the substance (C) should be provided in the layer region (PN) so as to have a portion with relatively higher distribution concentration C of the substance (C) on the substrate side, while having a portion on the interface t.sub.T side where said distribution concentration is made considerably lower as compared with the substrate side.
The layer region (PN) constituting the light-receiving member in the present invention is desired to have a localized region (B) containing the substance (C) preferably at a relatively higher concentration on the substrate side as described above.
In the present invention, the localized region (B) as explained in terms of the symbols shown in FIGS. 27 through 35, may be desirably provided within 5.mu. from the interface position t.sub.B.
In the present invention, the above localized region (B) may be made to be identical with the whole of the layer region (L) from the interface position t.sub.B to the thickness of 5.mu., or alternatively a part of the layer region (L).
It may suitably be determined depending on the characteristics required for the light-receiving layer to be formed whether the localized region (B) should be made a part or the whole of the layer region (L).
For formation of the layer region (PN) containing the aforesaid substance (C) by incorporating a substance (C) for controlling conductivity such as the group III atoms or the group V atoms structurally into the light-receiving layer, a starting material for introduction of the group III atoms or a starting material for introduction of the group V atoms may be introduced under gaseous state into a deposition chamber together with other starting materials for formation of the respective layers during layer formation.
As the starting material which can be used for introduction of the group III atoms, it is desirable to use those which are gaseous at room temperature under atmospheric pressure or can readily be gasified under layer forming conditions. Typical examples of such starting materials for introduction of the group III atoms, there may be included as the compounds for introduction of boron atoms boron hydrides such as B.sub.2 H.sub.6, B.sub.4 H.sub.10, B.sub.5 H.sub.9, B.sub.5 H.sub.11, B.sub.6 H.sub.10, B.sub.6 H.sub.12, B.sub.6 H.sub.14, etc. and boron halides such as BF.sub.3, BCl.sub.3, BBr.sub.3, etc. Otherwise, it is also possible to use AlCl.sub.3, GaCl.sub.3, Ga(CH.sub.3).sub.3, InCl.sub.3, TlCl.sub.3 and the like.
The starting materials which can effectively be used in the present invention for introduction of the group V atoms may include, for introduction of phosphorus atoms, phosphorus hydrides such as PH.sub.3, P.sub.2 H.sub.4, etc., phosphorus halides such as PH.sub.4 I, PF.sub.3, PF.sub.5, PCl.sub.3, PCl.sub.5, PBr.sub.3, PBr.sub.5, PI.sub.3 and the like. Otherwise, it is possible to utilize AsH.sub.3, AsF.sub.3, AsCl.sub.3, AsBr.sub.3, AsF.sub.5, SbH.sub.3, SbF.sub.3, SbF.sub.5, SbCl.sub.3, SbCl.sub.5, SbCl, BiH.sub.3, BiCl.sub.3, BiBr.sub.3 and the like effectively as the starting material for introduction of the group V atoms.
In the light-receiving member of the present invention, for the purpose of obtaining higher photosensitivity and dark resistance, and further for the purpose of improving adhesion between the substrate and the light-receiving layer, at least one kind of atoms selected from oxygen atoms, carbon atoms and nitrogen atoms can be contained in the light-receiving layer in either uniform or ununiform distribution state in the layer thickness direction. Such atoms (OCN) to be contained in the light-receiving layer may be contained therein throughout the whole layer region of the light-receiving layer or localized by being contained in a part of the layer region of the light-receiving layer.
The distribution concentration C (OCN) of the atoms (OCN) should desirably be uniform within the plane parallel to the surface of the substrate.
In the present invention, the layer region (OCN) where atoms (OCN) are contained is provided so as to occupy the whole layer region of the light-receiving layer when it is primarily intended to improve photosensitivity and dark resistance, while it is provided so as to occupy the end portion layer region on the substrate side of the light-receving layer when it is primarily intended to strengthen adhesion between the substrate and the light-receiving layer.
In the former case, the content of atoms (OCN) contained in the layer region (OCN) should desirably be made relatively smaller in order to maintain high photosensitivity, while in the latter case relatively larger in order to ensure reinforcement of adhesion to the substrate.
In the present invention, the content of the atoms (OCN) to be contained in the layer region (OCN) provided in the light-receiving layer can be selected suitably in organic relationship with the characteristics required for the layer region (OCN) itself, or with the characteristic at the contacted interface with the substrate when the said layer region (OCN) is provided in direct contact with the substrate, etc.
When other layer regions are to be provided in direct contact with the layer region (OCN), the content of the atoms (OCN) may suitably be selected with due considerations about the characteristics of said other layer regions or the characteristics at the contacted interface with said other layer regions.
The amount of the atoms (OCN) contained in the layer region (OCN) may be determined as desired depending on the characteristics required for the light-receiving member to be formed, but it may preferably be 0.001 to 50 atomic %, more preferably 0.002 to 40 atomic %, most preferably 0.003 to 30 atomic %.
In the present invention, when the layer region (OCN) occupies the whole region of the light-receiving layer or, although not occupying the whole region, the proportion of the layer thickness T.sub.O of the layer region (OCN) occupied in the layer thickness T of the light-receiving layer is sufficiently large, the upper limit of the content of the atoms (OCN) contained in the layer region (OCN) should desirably be made sufficiently smaller than the value as specified above.
In the case of the present invention, when the proportion of the layer thickness T.sub.O of the layer region (OCN) occupied relative to the layer thickness T of the light-receiving layer is 2/5 or higher, the upper limit of the atoms (OCN) contained in the layer region (OCN) should desirably be made 30 atomc % or less, more preferably 20 atomic % or less, most preferably 10 atomic % or less.
According to a preferred embodiment of the present invention, it is desirable that the atoms (OCN) should be contained in at least the above first layer to be provided directly on the substrate. In short, by incorporating the atoms (OCN) at the end portion layer region on the substrate side in the light-receiving layer, it is possible to effect reinforcement of adhesion between the substrate and the light-receiving layer.
Further, in the case of nitrogen atoms, for example, under the co-presence with boron atoms, improvement of dark resistance and improvement of photosensitivity can further be ensured, and therefore they should preferably be contained in a desired amount in the light-receiving layer.
Plural kinds of these atoms (OCN) may also be contained in the light-receiving layer. For example, oxygen atoms may be contained in the first layer, nitrogen atoms in the second layer, or alternatively oxygen atoms and nitrogen atoms may be permitted to be co-present in the same layer region.
FIGS. 43 through 51 show typical examples of ununiform depth profiles in the layer thickness direction of the atoms (OCN) contained in the layer region (OCN) in the light-receiving member of the present invention.
In FIGS. 43 through 51, the abscissa indicates the distribution concentration C of the atoms (OCN), and the ordinate the layer thickness of the layer region (OCN), t.sub.B showing the position of the end surface of the layer region on the substrate side, while t.sub.T shows the position of the end face of the layer region (OCN) opposite to the substrate side. Thus, layer formation of the layer region (OCN) containing the atoms (OCN) proceeds from the t.sub.B side toward the t.sub.T side.
FIG. 43 shows a first typical embodiment of the depth profile in the layer thickness direction of the atoms (OCN) contained in the layer region (OCN).
In the embodiment shown in FIG. 43, from the interface position t.sub.B where the surface on which the layer region (OCN) containing the atoms (OCN) is formed contacts the surface of said layer region (OCN) to the position of t.sub.1, the atoms (OCN) are contained in the layer region (OCN) to be formed while the distribution concentration of the atoms (OCN) taking a constant value of C.sub.1, said distribution concentration being gradually continuously reduced from C.sub.2 from the position t.sub.1 to the interface position t.sub.T, until at the interface position t.sub.T, the distribution concentration C is made C.sub.3.
In the embodiment shown in FIG. 44, the distribution concentration C of the atoms (OCN) contained is reduced gradually continuously from the concentration C.sub.4 from the position t.sub.B to the position t.sub.T, at which it becomes the concentration C.sub.5.
In the case of FIG. 45, from the position t.sub.B to the position t.sub.2, the distribution concentration of the atoms (OCN) is made constantly at C.sub.6, reduced gradually continuously from the concentration C.sub.7 between the position t.sub.2 and the position t.sub.T, until at the position t.sub.T, the distribution concentration C is made substantially zero (here substantially zero means the case of less than the detectable level).
In the case of FIG. 46, the distribution concentration C of the atoms (OCN) is reduced gradually continuously from the concentration C.sub.8 from the position t.sub.B up to the position t.sub.T, to be made substantially zero at the position t.sub.T.
In the embodiment shown in FIG. 47, the distribution concentration C of the atoms (OCN) is made constantly C.sub.9 between the position t.sub.B and the position t.sub.3, and it is made the concentration C.sub.10 at the position t.sub.T. Between the position t.sub.3 and the position t.sub.T, the distribution concentration C is reduced from the concentration C.sub.9 to substantially zero as a first order function from the position t.sub.3 to the position t.sub.T.
In the embodiment shown in FIG. 48, from the position t.sub.B to the position t.sub.4, the distribution concentration C takes a constant value of C.sub.11, while the distribution state is changed to a first order function in which the concentration is decreased from the concentration C.sub.12 to the concentration C.sub.13 from the position t.sub.4 to the position t.sub.T, and the concentration C is made substantially zero at the position t.sub.T.
In the embodiment shown in FIG. 49, from the position t.sub.B to the position t.sub.T, the distribution concentration C of the atoms (OCN) is reduced as a first order function from the concentration C.sub.14 to substantially zero.
In FIG. 50, there is shown an embodiment, wherein from the position t.sub.B to the position t.sub.5, the distribution concentration of the atoms (OCN) is reduced approximately as a first order function from the concentration C.sub.15 to C.sub.16, and it is made constantly C.sub.16 between the position t.sub.5 and the position t.sub.T.
In the embodiment shown in FIG. 51, the distribution concentration C of the atoms (OCN) is C.sub.17 at the position t.sub.B, and, toward the position t.sub.6, this C.sub.17 is initially reduced gradually and then abruptly reduced near the position t.sub.6, until it is made the concentration C.sub.18 at the position t.sub.6.
Between the position t.sub.6 and the position t.sub.7, the concentration is initially reduced abruptly and thereafter gently gradually reduced to become C.sub.19 at the position t.sub.7, and between the position t.sub.7 and the position t.sub.8, it is reduced very gradually to become C.sub.20 at the position t.sub.8. Between the position t.sub.8 and the position t.sub.T, the concentration is reduced from the concentration C.sub.20 to substantially zero along a curve with a shape as shown in the Figure.
As described above about some typical examples of depth profiles in the layer thickness direction of the atoms (OCN) contained in the layer region (OCN) by referring to FIGS. 43 through 51, it is desirable in the present invention that, when the atoms (OCN) are to be contained ununiformly in the layer region (OCN), the atoms (OCN) should be distributed in the layer region (OCN) with higher concentration on the substrate side, while having a portion considerably depleted in concentration on the interface t.sub.T side as compared with the substrate side.
The layer region (OCN) containing atoms (OCN) should desirably be provided so as to have a localized region (B) containing the atoms (OCN) at a relatively higher concentration on the substrate side as described above, and in this case, adhesion between the substrate and the light-receiving layer can be further improved.
The above localized region (B) should desirably be provided within 5.mu. from the interface position t.sub.B, as explained in terms of the symbols indicated in FIGS. 43 through 51.
In the present invention, the above localized region (B) may be made the whole of the layer region (L.sub.T) from the interface position t.sub.B to 5.mu. thickness or a part of the layer region (L.sub.T).
It may suitably be determined depending on the characteristics required for the light-receiving layer to be formed whether the localized region (B) is made a part or the whole of the layer region (L.sub.T).
The localized region (B) should preferably be formed to have a depth profile in the layer thickness direction such that the maximum value Cmax of the distribution concentration of the atoms (OCN) may preferably be 500 atomic ppm or more, more preferably 800 atomic ppm or more, most preferably 1000 atomic ppm or more.
In other words, in the present invention, the layer region (OCN) containing the atoms (OCN) should preferably be formed so that the maximum value Cmax of the distribution concentration C may exist within 5.mu. layer thickness from the substrate side (in the layer region with 5.mu. thickness from t.sub.B).
In the present invention, when the layer region (OCN) is provided so as to occupy a part of the layer region of the light-receiving layer, the depth profile of the atoms (OCN) should desirably be formed so that the refractive index may be changed moderately at the interface between the layer region (OCN) and other layer regions.
By doing so, reflection of the light incident upon the light-receiving layer from the interface between contacted interfaces can be inhibited, whereby appearance of interference fringe pattern can more effectively be prevented.
It is also preferred that the distribution concentration C of the atoms (OCN) in the layer region (OCN) should be changed along a line which is changed continuously and moderately, in order to give smooth refractive index change.
In this regard, it is preferred that the atoms (OCN) should be contained in the layer region (OCN) so that the depth profiles as shown, for example, in FIGS. 43 through 46, FIG. 49 and FIG. 51 may be assumed.
In the present invention, for provision of a layer region (OCN) containing the atoms (OCN) in the light-receiving layer, a starting material for introduction of the atoms (OCN) may be used together with the starting material for formation of the light-receiving layer during formation of the light-receiving layer and incorporated in the layer formed while controlling its amount.
When the g1ow discharge method is employed for formation of the layer region (OCN), a starting material for introduction of the atoms (OCN) is added to the material selected as desired from the starting materials for formation of the light-receiving layer as described above. For such a starting material for introduction of the atoms (OCN), there may be employed most of gaseous or gasified gasifiable substances containing at least the atoms (OCN) as the constituent atoms.
More specifically, there may be included, for example, oxygen (0.sub.2), ozone (0.sub.3), nitrogen monoxide (NO), nitrogen dioxide (NO.sub.2), dinitrogen monoxide (N.sub.2 0), dinitrogen trioxide (N.sub.2 0.sub.3), dinitrogen tetraoxide (N.sub.2 O.sub.4), dinitrogen pentaoxide (N.sub.2 O.sub.5), nitrogen trioxide (NO.sub.3); lower siloxanes containing silicon atom (Si), oxygen atom (0) and hydrogen atom (H) as constituent atoms, such as disiloxane (H.sub.3 SiOSiH.sub.3), trisiloxane (H.sub.3 SiOSiH.sub.2 OSiH.sub.3), and the like; saturated hydrocarbons having 1-5 carbon atoms such as methane (CH.sub.4), ethane (C.sub.2 H.sub.6), propane (C.sub.3 H.sub.8), n-butane (n-C.sub.4 H.sub.10), pentane (C.sub.5 H.sub.12); ethylenic hydrocarbons having 2-5 carbon atoms such as ethylene (C.sub.2 H.sub.4), propylene (C.sub.3 H.sub.6), butene-1 C.sub.4 H.sub.8), butene-2 (C.sub.4 H.sub.8), isobutylene (C.sub.4 H.sub.8), pentene (C.sub.5 H.sub.10); acetylenic hydrocarbons having 2-4 carbon atoms such as acetylene (C.sub.2 H.sub.2), methyl acetyllene (C.sub.3 H.sub.4), butyne (C.sub.4 H.sub.6); and the like; nitrogen (N.sub.2 ), ammonia (NH.sub.3), hydrazine (H.sub.2 NNH.sub.2), hydrogen azide (HN.sub.3), ammonium azide (NH.sub.4 N.sub.3), nitrogen trifluoride (F.sub.3 N), nitrogen tetrafluoride (F.sub.4 N) and so on.
In the case of the sputtering method, as the starting material for introduction of the atoms (OCN), there may also be employed solid starting materials such as SiO.sub.2, Si.sub.3 N.sub.4 and carbon black in addition to those gasifiable as enumerated for the glow discharge method. These can be used in the form of a target for sputtering together with the target of Si, etc.
In the present invention, when forming a layer region (OCN) containing the atoms (OCN) during formation of the light-receiving layer, formation of the layer region (OCN) having a desired depth profile in the direction of layer thickness formed by varying the distribution concentration C of the atoms (OCN) contained in said layer region (OCN) may be conducted in the case of glow discharge by introducing a starting gas for introduction of the atoms (OCN) the distribution concentration C of which is to be varied into a deposition chamber, while varying suitably its gas flow rate according to a desired change rate curve.
For example, by the manual method or any other method conventionally used such as an externally driven motor, etc., the opening of a certain needle valve provided in the course of the gas flow channel system may be gradually varied. During this operation, the rate of variationis not necessarily required to be linear, but the flow rate may be controlled according to a variation rate curve previously designed by means of, for example, a microcomputer to give a desired content curve.
When the layer region (OCN) is formed according to the sputtering method, formation of a desired depth profile of the atoms (OCN) in the layer thickness direction by varying the distribution concentration C of the atoms (OCN) may be performed first similarly as in the case of the glow discharge method by employI5 ing a starting material for introduction of the atoms (OCN) under gaseous state and varying suitably as desired the gas flow rate of said gas when introduced into the deposition chamber. Secondly, formation of such a depth profile can also be achieved by previously changing the composition of a target for sputtering. For example, when a target comprising a mixture of Si and SiO.sub.2 is to be used, the mixing ratio of Si to SiO.sub.2 may be varied in the direction of layer thickness of the target.
The substrate to be used in the present invention may be either electroconductive or insulating. As the electroconductive substrate, there may be mentioned metals such as NiCr, stainless steel, Al, Cr, Mo, Au, Nb, Ta, V, Ti, Pt, Pd etc. or alloys thereof.
As insulating substrates, there may conventionally be used films or sheets of synthetic resins, including polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, etc., glasses, ceramics, papers and so on. At least one side surface of these substrates is preferably subjected to treatment for imparting electroconductivity, and it is desirable to provide other layers on the side at which said electroconductive treatment has been applied.
For example, electroconductive treatment of a glass can be effected by providing a thin film of NiCr, Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, In.sub.2 O.sub.3, SnO.sub.2, ITO (In.sub.2 O.sub.3 +SnO.sub.2) thereon. Alternatively, a synthetic resin film such as polyester film can be subjected to the electroconductive treatment on its surface by vacuum vapor deposition, electron-beam deposition or sputtering of a metal such as NiCr, Al, Ag, Pb, Zn, Ni, Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc. or by laminating treatment with said metal, thereby imparting electroconductivity to the surface. The substrate may be shaped in any form such as cylinders, belts, plates or others, and its form may be determined as desired. For example, when the light-receiving member 1004 in FIG. 10 is to be used as the light-receiving member for electrophotography, it may desirably be formed into an endless belt or a cylinder for use in continuous high speed copying. The substrate may have a thickness, which is conveniently determined so that the light-receiving member as desired may be formed. When the light-receiving member is required to have a flexibility, the substrate is made as thin as possible, so far as the function of a support can be exhibited. However, in such a case, the thickness is generally 10.mu.or more from the points of fabrication and handling of the substrate as well as its mechanical strength.
Next, an example of the process for producing the light-receiving member of this invention is to be briefly described.
FIG. 20 shows one example of a device for producing a light-receiving member.
In the gas bombs 2002 to 2006, there are hermetically contained starting gases for formation of the light-receiving member of the present invention. For example, 2002 is a bomb containing SiH.sub.4 gas (purity 99.999%, hereinafter abbreviated as SiH.sub.4), 2003 is a bomb contaiing GeH.sub.4 gas (purity 99.999 %, hereinafter abbreviated as GeH.sub.4), 2004 is a bomb containing NO gas (purity 99.99%, hereinafter abbreviated as NO), 2005 is bomb containing B.sub.2 H.sub.6 gas diluted with H.sub.2 (purity 99.999%, hereinafter abbreviated as B.sub.2 H.sub.6 /H.sub.2) and 2006 is a bomb containing H.sub.2 gas (purity: 99.999%).
For allowing these gases to flow into the reaction chamber 2001, on confirmation of the valves 2022 to 2026 of the gas bombs 2002 to 2006 and the leak valve 2035 to be closed, and the inflow valves 2012 to 2016, the outflow valves 2017 to 2021 and the auxiliary valves 2032 and 2033 to be opened, the main valve 2034 is first opened to evacuate the reaction chamber 2001 and the gas pipelines. As the next step, when the reading on the vacuum indicator 2036 becomes 5.times.10.sup.-6 Torr, the auxiliary valves 2032, 2033 and the outflow valves 2017 to 2021 are closed.
Referring now to an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH.sub.4 gas from the gas bomb 2002, GeH.sub.4 gas from the gas bomb 2003, NO gas from the gas bomb 2004, B.sub.2 H.sub.6 /H.sub.2 gas from the gas bomb 2005 and H.sub.2 gas from the gas bomb 2006 are permitted to flow into the mass-flow controllers 2007, 2008, 2009, 2010 and 2011, respectively, by opening the valves 2022, 2023, 2024, 2025 and 2026 and controlling the pressures at the output pressure gauges 2027, 2028, 2029 2030 and 2031 to 1 Kg/cm.sup.2 and opening gradually the inflow valves 2012, 2013, 2014, 2015 and 2016, respectively. subsequently, the outflow valves 2017, 2018, 2019, 2020 and 2021 and the auxiliary valves 2032 and 2033 were gradually opened to permit respective gases to flow into the reaction chamber 2001. The outflow valves 2017, 2018, 2019, 2020 and 2021 are controlled so that the flow rate ratio of SiH.sub.4 gas, GeH.sub.4 gas, B.sub.2 H.sub.6 /H.sub.2 gas, NO gas and H.sub.2 may have a desired value and opening of the main valve 2034 is also controlled while watching the reading on the vacuum indicator 2036 so that the pressure in the reaction chamber 2001 may reach a desired value. And, after confirming that the temperature of the substrate 2037 is set at 50.degree. to 400.degree. C. by the heater 2038, the power source 2040 is set at a desired power to excite glow discharge in the reaction chamber 2001, simultaneously with controlling of the distributed concentrations of germanium atoms and boron atoms to be contained in the layer formed by carrying out the operation to change gradually the openings of the valves 2018, 2020 by the manual method or by means of an externally driven motor, etc. thereby changing the flow rates of GeH.sub.4 gas and B.sub.2 H.sub.6 gas according to previously designed change rate curves.
By maintaining the glow discharge as described above for a desired period time, the first layer (G) is formed on the substrate 2037 to a desired thickness. At the stage when the first layer (G) is formed to a desired thickness, the second layer (S) containing substantially no germanium atom can be formed on the first layer (G) by maintaining glow discharge according to the same conditions and procedure as those in formation of the first layer (G) except for closing completely the outflow valve 2018 and changing, if desired, the discharging conditions. Also, in the respective layers of the first layer (G) and the second layer (S), by opening or closing as desired the outflow valves 2019 or 2020, oxygen atoms or boron atoms may be contained or not, or oxygen atoms or boron atoms may be contained only in a part of the layer region of the respective layers.
When nitrogen atoms or carbon atoms are to be contained in place of oxygen atoms, layer formation may be conducted by replacing NO gas in the gas bomb 2004 with NH.sub.3 or CH.sub.4. Also, when the kinds of the gases employed are desired to be increased, bombs of desirable gases may be provided additionally before carrying out layer formation similarly. During layer formation, for uniformization of the layer formation, it is desirable to rotate the substrate 2037 by means of a motor 2039 at a constant speed.
The present invention is described in more detail by referring to the following Examples.
EXAMPLE 1
By means of a lathe, an aluminum substrate was worked to have the surface characteristic of No. 101 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following various procedures under the conditions as shown in Table 2A, a light-receiving member for electrophotography of A-Si was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si:H thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.1 .mu.m between the center and both ends of the A-SiGe:H layer and 2 .mu.m between the center and both ends of the A-Si:H layer, with the layer thickness difference at the minute portion being 0.02 .mu.m in the A-SiGe:H layer and 0.3 .mu.m in the A-Si:H layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter
ent and transfer to 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 2
By means of a lathe, an aluminum substate was worked by the same manner as in Example 1 to have the surface characteristic of No. 102 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the same procedures as in Example 1 under the conditions as shown in Table 3A, a light-receiving member for electrophotography of A-Si:H was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si:H thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.1 .mu.m between the center and both ends of the A-SiGe:H layer and 2 .mu.m between the center and both ends of the A-Si:H layer, with the layer thickness difference at the minute portion being 0.03 .mu.m in the A-siGe:H layer and 0.3 .mu.m in the A-Si:H layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 3
By means of a lathe, an aluminum substrate was worked by the same manner as in Example 1 to have the surface characteristic of No. 103 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the sane procedures as in Example 1 under the conditions as shown in Table 4A, a light-receiving member for electrophotography of A-Si was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si:H thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.6 .mu.m between the center and both ends of the A-SiGe:H layer and 2 .mu.m between the center and both ends of the A-Si:H layer, with the layer thickness difference at the minute portion being 0.01 .mu.m in the A-SiGe:H layer and 0.3 .mu.m in the A-Si:H layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 .mu.nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 4
By means of a lathe, an aluminum substrate was worked by the same manner as in Example 1 to have the surface characteristic of No. 104 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the same procedures as in Example 1 under the conditions as shown in Table 5A, a light-receiving member for electrophotography of A-Si:H was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si:H thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.8 .mu.m between the center and both ends of the A-SiGe:H layer and 2 .mu.m between the center and both ends of the A-Si:H layer, with the layer thickness difference at the minute portion being 0.15 .mu.m in the A-SiGe:H layer and 0.3 .mu.m in the A-Si:H layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 5
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2B (Nos. 201-204).
Next, a light-receiving member for electrophotography of a-Si:H was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1B (Sample Nos. 201B-204B).
The a-(Si;Ge):H layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 22 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B: produced by Hewlett-Packard Inc.).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 2B (Sample Nos. 201B-204B).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 201B-204B).
EXAMPLE 6
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 3B (Nos. 301-304).
Next, a light-receiving member for electrophotography of a-Si:H was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1B (Sample Nos. 301B-304B).
The a-(Si;Ge):H layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 23 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 3B (Sample Nos. 301B-304B).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 301B-304B).
EXAMPLE 7
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 5B (Nos. 501-504).
Next, a light-receiving member for electrophotography of a-Si:H was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4B (Sample Nos. 501B-504B).
The a-(Si;Ge):H layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 24 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 5B (Sample Nos. 501B-504B).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 501B-504B).
EXAMPLE 8
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 6B (Nos. 601-604).
Next, a light-receiving member for electrophotography of a-Si:H was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4B (Sample Nos. 601B-604B).
The a-(Si;Ge):H layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 25 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 6B (Sample Nos. 601B-604B).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 601B-604B).
EXAMPLE 9
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2C (Cylinder Nos. 201-204).
Next, a light-receiving member for electrophotography was prepared following various procedures using the deposition device in FIG. 20 under the conditions as shown in Table 1C (Sample Nos. 201C-204C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 2C (Nos. 201C-204C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 10
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 4C (Cylinder Nos. 401-404).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 3C (Sample Nos. 401C-404C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 4C (Nos. 401C-404C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 11
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 6C (Cylinder Nos. 601-604).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 5C (Sample Nos. 601C-604C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 6C (Nos. 601C-604C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 12
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 8C (Cylinder Nos. 801-804).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 7C (Sample Nos. 801C-804C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 8C (Nos. 801C-804C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 13
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 2I (P: Pitch, D: depth) under the conditions shown in Table 7C (Cylinder Nos. 1001-1004 ).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 7C (Sample Nos. 1001C-1004C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 10C (Nos. 1001C-1004C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 14
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 12C (Cylinder Nos. 1201-1204).
Next, a light-receiving member for electrophotography was prepared following various procedures using the fill deposition device in FIG. 20 undcr the conditions as shown in Table 11C (Sample Nos. 1201C-1204C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 12C (Nos. 1201C-1204C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 15
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 14C (Cylinder Nos. 1401-1404 ).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 13C (Sample Nos. 1401C-1404C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 14C (Nos. 1401C-1404C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 16
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 16C (Cylinder Nos. 1601-1604).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 15C (Sample Nos. 1601C-1604C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shbwn in Table 16C (Nos. 1601C-1604C).
Thc light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 17
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 18C (Cylinder Nos. (1801-1804).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 17C (Sample Nos. 1801C-1804C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 18C (Nos. 1801C-1804C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 18
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 20C (Cylinder Nos. 2001-2004).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 19C (Sample Nos. 2001C-2004C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 20C (Nos. 2001C-2004C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 19
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 22C (Cylinder Nos. 2201-2204).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 21C (Sample Nos. 2201C-2204C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 22C (Nos. 2201C-2204C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 20
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 24C (Cylinder Nos. 2401-2404).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 23C (Sample Nos. 2401C-2404C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 24C (Nos. 2401C-2404C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 21
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiareter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 26C (Cylinder Nos. 2601-2604).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 25C (Sample Nos. 2601C-2604C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 26C (Nos. 2601C-2604C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 22
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 28C (Cylinder Nos. 2801-2804).
Next, a light-receiving member for electrophotography was prepared following various precedures using the film deposition device in FIG. 20 under the conditions as shown in Table 27C (Sample Nos. 2801C-2804C).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 28C (Nos. 2801C-2804C).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 23
For examples 9 through 22, light-receiving members for electrophotography (Sample Nos. 2901C-2913C) were prepared by use of PH.sub.3 gas diluted with H.sub.2 (to further 100-fold as compared with the case of B.sub.2 H.sub.6) in place of B.sub.2 H.sub.6 gas diluted with H.sub.2 .
Other preparstion conditions were the same as in Examples 9 through 22.
These light-receiving members for electrophogography were each subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. Each image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 24
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2D (Nos. 201-204).
Next, a light-receiving member for electrophotography of a-Si:H was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1D (Sample Nos. 201D-204D).
The a-SiGe:H:B layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 22 by operation mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 2D.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 201D-204D).
EXAMPLE 25
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: Pitch, D: depth) under the conditions shown in Table 3D (Nos. 301-304).
Next, a light-receiving member for electrophotography of a-Si:H was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1D (Sample Nos. 301D-304D).
The a-SiGe:H:B layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 23 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 3D.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 301D-304D).
EXAMPLE 26
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 5D (Nos. 501-504). 504).
Next, a light-receiving member for electrophotography of a-Si:H was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4D (Sample Nos. 501D-504D).
The a- SiGe:H:B layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 24 by operating mass fIow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 5D.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 501D-504D).
EXAMPLE 27
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 6D (Nos. 601-604).
Next, a light-receiving member for electrophotography of a-Si:H type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4D (Sample Nos. 601D-604D).
The a-SiGe:H:B layer as the first layer was formed whi1e controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 25 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 6D.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 601D-604D).
EXAMPLE 28
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 8D.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 7D (Sample Nos. 801D-804D).
The a-SiGe:H:B layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 22 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 8D.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 29
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 10D.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 9D (Sample Nos. 1001D-1004D).
The a-SiGe:H:B layer as the fifst layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 24 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 10D.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 30
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 12D.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 11D (Sample Nos. 1201D-1204D).
The a-SiGe:H:B layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 25 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 12D.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 31
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 14D.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 13D (Sample Nos. 1401D-1404D).
The a-SiGe:H:B layer as the first layer was firmed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 23 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 14D.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 32
For Examples 24 through 31, light-receiving members for electrophotography (Sample Nos. 2001D-2028D) were prepared by use of PH.sub.3 gas diduted with H.sub.2 to 3000 vol.ppm in place of B.sub.2 H.sub.6 gas diluted with H.sub.2 to 3000 vol.ppm.
Other preparation conditions were the same as in Examples 24 through 31.
These light-receiving members for electrophotography were each subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. Each image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 33
By means of a lathe, an aluminum substrate was worked to have the surface characteristic of No. 101 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following various procedures under the conditions as shown in Table 2E, a light-receiving member for electrophotography of A-Si type was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si type thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.1 .mu.m between the center and both ends of the first layer and 2 .mu.m between the center and both ends of the second layer, with the layer thickness difference at the minute portion being 0.02 .mu.m in the first layer and 0.03 .mu.m in the second layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 34
By means of a lathe, an aluminum substrate was worked by the same manner as in Example 33 to have the surface characteristic of No. 102 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the same procedures as in Example 1 under the conditions as shown in Table 3E, a light-receiving member for electrophotography of A-Si type was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si type thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.1 .mu.m between the center and both ends of the first layer and 2 .mu.m between the center and both ends of the second layer, with the layer thickness difference at the minute portion being 0.03 .mu.m in the first layer and 0.03 .mu.m in the second layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 35
By means of a lathe, an aluminum substrate was worked by the same manner as in Example 33 to have the surface characteristic of No. 103 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the same procedures as in Example 1 under the conditions as shown in Table 4E, a light-receiving member for electrophotography of A-Si type was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si type thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.6 .mu.m between the center and both ends of the first layer and 2 .mu.m between the center and both ends of the second layer, with the layer thickness difference at the minute portion being 0.1 .mu.m in the first layer and 0.3 .mu.m in the second layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 36
By means of a lathe, an aluminum substrate was worked by the same manner as in Example 33 to have the surface characteristic of No. 104 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the same procedures as in Example 1 under the conditions as shown in Table 5E, a light-receiving member for electrophotography of A-Si type was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si type thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.08 .mu.m between the center and both ends of the first layer and 2 .mu.m between the center and both ends of the second layer, with the layer thickness difference at the minute portion being 0.15 .mu.m in the first layer and 0.3 .mu.m in the second layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 37
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 7E.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 6E (Sample Nos. 701E-704E).
The boron-containing layer was formed while controlling the flow rate of B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 60 by operating mass flow controller 2010 for B.sub.2 H.sub.6 /H.sub.2 using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 7E.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 38
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 9E.
Next, a light-receiving member for electrophotography of a-Si: type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 8E (Sample Nos. 901E-904E).
The boron-containing layer was formed while controlling the flow rate of B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 61 by operating mass flow controller 2010 for B.sub.2 H.sub.6 /H.sub.2 using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 9E.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 39
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 11E.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 10E (Sample Nos. 1101E-1104E).
The boron-containing layer was formed while controlling the flow rate of B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 62 by operating mass flow controller 2010 for B.sub.2 H.sub.6 /H.sub.2 using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 11E.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of layer beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 40
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 13E.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 12E (Sample Nos. 1301E-1304E).
The boron-containing layer was formed while controlling the flow rate of B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 39 by operating mass flow controller 2010 for B.sub.2 H.sub.6 /H.sub.2 using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 13E.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 41
For Examples 33 through 40, light-receiving members for electrophotography (Sample Nos. 2001E-2020E) were prepared by use of PH.sub.3 gas diluted with H.sub.2 to 3000 vol.ppm in place of B.sub.2 H.sub.6 gas diluted with H.sub.2 to 3000 vol.ppm.
Other preparation conditions were the same as in Examples 33 through 40.
These light-receiving members for electrophotography were each subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. Each image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 42
In this Example, a semiconductor laser (wavelength: 780 nm) with a spot size of 80 .mu.m was employed. Thus, on a cylindrical aluminum substrate [length (L) 357 mm, outer diameter (r) 80 mm] on which A-Si:H is to be deposited, a spiral groove was prepared by a lathe with a pitch (P) of 25 .mu.m and a depth (D) of 0.8 S. The form of the groove is shown in FIG. 21.
On this aluminum substrate, the light-receiving layer comprising the first layer and the second layer were deposited by means of the device as shown in FIG. 63 in the following manner.
First, the constitution of the device is to be explained. 1201 is a high frequency power source, 1202 is a matching box, 1203 is a diffusion pump and a mechanical booster pump, 1204 is a motor for rotation of the aluminum substrate, 1205 is an aluminum substrate, 1206 is a heater for heating the aluminum substrate, 1207 is a gas inlet tube, 1208 is a cathode electrode for introduction of high frequency, 1209 is a shield plate, 1210 is a pcwer source for heater, 1221 to 1225, 1241 to 1245 are valves, 1231 to 1235 are mass flow controllers, 1251 to 1255 are regulators, 1261 is a hydrogen (H.sub.2) bomb, 1262 is a silane (SiH.sub.4) bomb, 1263 is an ammonia (NH.sub.3) bomb, 1264 is a nitrogen monoxida (NO) bomb and 1265 is a germane (GeH.sub.4) bomb.
Next, the preparation prccedure is to be explained. All of the main cocks of the bombs 1261-1265 were closed, all the mass flow controllers and the valves were opened and the deposition device was internally evacuated by the diffusion pump 1203 to 10.sup.-7 Torr. At the same time, the aluminum substrate 1205 was heated by the heater 1206 to 250.degree. C. and maintained constantly at 250.degree. C. After the temperature of the aluminum substrate 1205 became constantly at 250.degree. C., the valves 1221-1225, 1241-1245 and 1251-1255 were closed, the main cocks of bombs 1261-1265 were opened and diffusion pump 1203 was changed to the mechanical booster pump. The secondary pressure of the valves euipped with regulators 1251-1255 was set at 1.5 Kg/cm.sup.2. The mass flow controller 1231 was set at 300 SCCM, and the valves 1241 and 1221 were successively opened to introduce H.sub.2 gas in bomb 1261 into the deposition device.
Next, by setting the mass flow controllers 1232 and 1235 at 100 SCCM and 50 SCCM respectively, SiH.sub.4 gas in bomb 1262 and GeH: in bomb 1265 was introduced into the deposition device according to the same procedure as introduction of H.sub.2 gas. Then, by setting the mass flow controller 1234 so that the flow rate of NO gas in bomb 1264 may be 3.4 vol. % in an initial value relative to the sum total of SiH.sub.4 gas flow rate and GeH.sub.4 gas flow rate, NO gas was introduced into the deposition device according to the same procedure as introduction of H.sub.2 gas.
When the inner pressure in the deposition device was stabilized at 0.2 Torr, the high frequency power source 1201 was turned on and glow discharge was generated between the aluminum substrate 1205 and the cathode electrode 1208 by controlling the matching box 1202, and a A-SiGe:H:O layer (A-SiGe:H layer containing O) was deposited to a thickness of 5 .mu.m at a high frequency power of 150 W (the first layer). After deposition of a 5 .mu.m thick A-SiGe:H:0 layer, inflow of NO and GeH.sub.4 was stopped by closing the valves 1224 and 1225 without discontinuing discharge.
And, A-Si:H layer (non-doped) with a thickness of 20 .mu.m was deposited at a high frequency power of 150 W (the second layer). Then, with the high frequency power source and all the valves being closed, the deposition device was evacuated, the temperature of the aluminum substrate was lowered to room temperature and the substrate on which the light receiving layer was formed was taken out.
Separately, when the first layer and the second layer were formed on the same cylindrical aluminum substrate with the same surface characteristic under the same conditions and according to the same procedure as in the above case except for changing the high frequency power to 40 W, the surface of the light-receiving layer was found to be parallel to the surface of the substrate 1301, as shown in FIG. 64. The difference in the total layer thickness between the center and the both end portions of the aluminum substrate was 1 .mu.m.
When the above high frequency power was made 160 W, the surface of the photosensitive layer 1403 and the surface of the substrate 1401 were unparallel to each other as shown in FIG. 65. In this case, the layer thickness difference in average layer thickness between the center and the both end portions was 2 .mu.m.
For the two kinds of the light receiving members for electrophotography, image exposure was effected by means of the device shown in FIG. 26 with a semiconductor laser of a wavelength 780 nm with a spot size of 80 .mu.m, followed by developing and transfer to obtain images. In the light receiving member with the surface characteristic as shown in FIG. 64 prepared at a high freqeuncy power of 40 W, interference fringe pattern was observed.
On the other hand, in the light receiving member having the surface characteristic as shown in FIG. 65, no interference fringe pattern was observed and there could be obtained a member exhibiting practically satisfactory electrophotographic characteristics.
EXAMPLE 43
The surfaces of cylindrical aluminum substrates were worked by a lathe as shown in Table 1F. On these (Nos. 101-108) aluminum substrates were prepared light receiving members for electrophotography under the same conditions as in Example 1 where no interference fringe pattern was observed (high frequency power 160 W) (Nos. 111F-118F). The difference in average layer thickness between the center and the both end portions of the aluminum substrate in the light receiving member for electrophotography was 2.2 .mu.m.
The cross-sections of these light receiving members for electrophotography were observed by an electron microscope and the differences within the pitch of the second layer were measured to obtain the results as shown in Table 2F. For these light receiving members, image exposure was effected by means of the same device as shown in FIG. 26 similarly as in Example 42 using a semiconductor laser of wavelength 780 nm with a spot size of 80 .mu.m to obtain the results as shown in Table 2F.
EXAMPLE 44
Light receiving members were prepared under the same conditions as in Example 43 except for the following points (No. 121F-128F). The first layer was made to have a thickness of 10 .mu.m. The difference in average layer thickness between the center and the both ends of the first layer was 1.2 .mu.m, with the average difference in thickness between the center and the both ends of the second layer was 2.3 .mu.m. When the thickness of each layer prepared on each substate of Nos. 121F-128F was observed by an electron microscope, the results as shown in Table 3F were obtained. For these light receiving members, image exposure was conducted in the same image exposure device as in Example 42 to obtain the results as shown in Table 3F.
EXAMPLE 45
On cylindrical aluminum substrates (Nos. 101-108) having the surface characteristic as shown in Table 1F, light receiving members provided with the first layer containing nitrogen were prepared under the conditions as shown in Table 4F (Nos. 401F-408F).
The cross-sections of the light receiving members prepared under the above conditions were observed by an electron microscope. The average layer thickness of the first layer at the center and both ends of the cylinder was 0.09 .mu.m. The average layer thickness of the second layer was 3 .mu.m at the center and both ends of the cylinder.
The layer thickness difference within the short range of the second layer of each light receiving member can be seen from the results shown in Table 5F.
When these light receiving members were subjected to image exposure with laser beam similarly as described in Example 42, the results as shown in Table 5F were obtained.
EXAMPLE 46
On cylindrical aluminum substrates (Nos. 101-108) having the surface characteristic as shown in Table 1F, light receiving members provided with the first layer containing nitrogen were prepared under the conditions as shown in Table 6F (Nos. 501F-508F).
The cross-sections of the light receiving members prepared under the above conditions were observed by an electron microscope. The average layer thickness of the first layer at the center and both ends of the cylinder was 0.3 .mu.m. The average layer thickness of the second layer was 3.2 .mu.m at the center and both ends of the cylinder.
The layer thickness difference within the short range of the second layer of each light receiving member can be seen from the results shown in Table 7F.
When these light receiving members were subjected to image exposure with laser beam similarly as described in Example 42, the results as shown in Table 7F were obtained.
EXAMPLE 47
On cylindrical aluminum substrates (Cylinder Nos. 101-108) having the surface characteristic as shown in Table 1F, light receiving members provided with the first layer containing carbon were prepared under the conditions as shown in Table 8F (Nos. 901F-908F).
The cross-sections of the light receiving members prepared under the above conditions were observed by an electron microscope. The average layer thickness of the first layer at the center and both ends of the cylinder was 0.08 .mu.m. The average layer thickness of the second layer was 2.5 .mu.m at the center and both ends of the cylinder.
The layer thickness difference within the short range of the second layer of each light receiving member can be seen from the results shown in Table 9F.
When these light receiving members were subjected to image exposure with laser beam similarly as described in Example 42, the results as shown in Table 9F were obtained.
EXAMPLE 48
On cylindrical aluminum substrates (Nos. 101-108) having the surface characteristic as shown in Table 1F, light receiving members provided with the first layer containing carbon were prepared under the conditions as shown in Table 10F (Nos. 1101F-1108F).
The cross-sections of the light receiving members prepared under the above conditions were observed by an electron microscope. The average layer thickness of the first layer at the center and both ends of the cylinder was 1.1 .mu.m. The average layer thickness of the second layer was 3.4 .mu.m at the center and both ends of the cylinder.
The layer thickness difference within the short range of the second layer of each light receiving member can be seen from the results shown in Table 11F.
When these light receiving members were subjected to image exposure with laser beam similarly as described in Example 42, the results as shown in Table 11F were obtained.
EXAMPLE 49
A light-receiving member for electrophotography was prepared under the same conditions as described in Example 42 in the case when the high frequency power was made 160 W, except that, in formation of the first layer, the flow rate of NO gas was changed as shown in FIG. 17 relative to the sum of SiH.sub.4 gas flow rate and the GeH.sub.4 gas flow rate until the NO gas flow rate became zero on completion of layer preparation. Separately, the first layer and the second layer were formed under the same conditions and according to the same procedure as in the above case, except for changing the high frequency power to 40 W. As the result, the surface of the light-receiving layer was found to became parallel to the plane of the substrate 1301 as shown in FIG. 64. In this case, the difference in layer thickness of the whole layer between the center and both ends of the aluminum substrate 1301 was 1 .mu.m.
On the other hand, when the above frequency power was made 160 W, the surface of the photosensitive layer 1403 and the surface of the substrate 1401 were non-parallel to each other as shown in FIG. 65. In this case, the layer thickness difference in average layer thickness between the center and both ends of aluminum substrate was found to be 2 .mu.m.
For the two kinds of light-receiving members for electrophotography as prepared above, image exposure was effected with a semiconductor laser of wavelength 780 nm at a spot diameter of 80 .mu.m by means of the device as shown in FIG. 26, followed by development and transfer to obtain an image. In the light-receiving member having the surface characteristic as shown in FIG. 65 prepared under the condition of high frequency power of 40 W during layer formation, an interference fringe pattern was observed
On the other hand, in the light-receiving member having the surface characteristic as shown in FIG. 65, no interference fringe pattern was observed to give a product exhibiting electrophotographic characteristics acceptable in practical application.
EXAMPLE 50
The surfaces of cylindrical aluminum substrates were worked by a lathe as shown in Table 1F. On these (Cylinder Nos. 101-108) aluminum substrates were prepared light receiving members for electrophotography under the same conditions as in Example 49 where no interference fringe pattern was observed (high frequency power 160 W) (Nos. 1201F-1208F). The difference in average layer thickness between the center and the both end portions of the aluminum substrate in the light receiving member for electrophotography was 2.2 .mu.m.
The cross-sections of these light receiving members for electorphotography were observed by an electron microscope and the differences within the pitch of the second layer were measured to obtain the results as shown in Table 12F. For these light receiving members, image exposure was effected by means of the same device as shown in FIG. 26 similarly as in Example 49 using a semiconductor laser of wavelength 780 nm with a spot size of 80 .mu.m to obtain the results as shown in Table 12F.
EXAMPLE 51
Light receiving members were prepared under the same conditions as in Example 50 except for the following points (No. 1301F-1308F). The first layer was made to have a thickness of 10 .mu.m. The difference in average layer thickness between the center and the both ends of the first layer was 1.2 .mu.m, with the average difference in thickness distribution between the center and the both ends of the second layer was 2.3 .mu.m. When the thickness of each layer prepared on each substrate of Nos. 1301F-1308F was observed by an electron microscope, the results as shown in Table 3F were obtained. For these light receiving members, image exposure was conducted in the same image exposure device as in Example 42 to obtain the results as shown in Table 13F.
EXAMPLE 52
On cylindrical aluminum substrates (Cylinder Nos. 101-108) having the surface characteristic as shown in Table 1F, light receiving members provided with the first layer containing nitrogen were prepared under the conditions as shown in Table 14F (Nos. 1501F-1508F), following otherwise the same conditions and procedure as in Example 50.
The cross-sections of the light receiving members prepared under the above conditions were observed by an electron microscope. The average layer thickness of the first layer at the center and both ends of the cylinder was 0.09 .mu.m. The average layer thickness of the second layer was 3 .mu.m at the center and both ends of the cylinder.
The layer thickness difference within the short range of the second layer of each light receiving member (Sample Nos. 1501F-1508F) can be seen from the results shown in Table 15F.
When these light receiving members (Sample Nos. 1501F-1508F) were subjected to image exposure with laser beam similarly as described in Example 42, the results as shown in Table 15F were obtained.
EXAMPLE 53
On cylindrical aluminum substrates (Cylinder Nos. 101-108) having the surface characteristic as shown in Table 1F, light receiving members provided with the first layer containing nitrogen were prepared under the conditions as shown in Table 16F (Nos. 1701F-1708F), following otherwise the same conditions and the procedure as in Example 50.
The cross-sections of the lgiht receiving members (Sample Nos. 1701F-1708F) prepared under the above conditions were observed by an electron microscope. The average layer thickness of the first layer at the center and both ends of the cylinder was 0.3 .mu.m. The average layer thickness of the second layer was 0.3 .mu.m at the center and both ends of the cylinder.
The layer thickness difference within the short rage of the photosensitive layer of each light receiving member (Sample Nos. 1701F-1708F) can be seen from the results shown in Table 17F.
When these light receiving members were subjected to image exposure with laser beam similarly as described in Example 42, the results as shown in Table 17F were obtained.
EXAMPLE 54
On cylindrical aluminum substrates (Cylinder Nos. 101-108) having the surface characteristic as shown in Table 1F, light receiving members provided with the layer containing nitrogen were prepared under the conditions as shown in Table 18F (No. 1901F-1908F), following otherwise the same conditions and the procedure as in Example 50.
The cross-sections of the light receiving members (Sample Nos. 1901F-1908F) prepared under the above conditions were observed by an electron microscope. The average layer thickness of the first layer at the center and both ends of the cylinder was 0.08 .mu.m. The average layer thickness of the second layer was 2.5 .mu.m at the center and both ends of the cylinder.
The layer thickness difference within the short range of the second layer of each member (Sample Nos. 1901F-1908F) can be seen from the results shown in Table 19F.
When these light receiving members (Sample Nos. 1901F-1908F) were subjected to image exposure with laser beam similarly as described in Example 42, the results as shown in Table 19F were obtained.
EXAMPLE 55
On cylindrical alumonum substrates (Cylinder Nos. 101-108) having the surface characteristic as shown in Table 1F, light receiving members provided with the first layer containing nitrogen were prepared under the conditions as shown in Table 20F, following otherwise the same conditions and the procedure as in Example 50. (Nos. 2101F-2108F)
The cross-sections of the light receiving members (Nos. 2101F-2108F) prepared under the above conditions were observed by an electron microscope. The average layer thickness of the first layer at the center and both ends of the cylinder was 1.1 .mu.m. The average layer thickness of the second layer was 3.4 .mu.m at the center and both ends of the cylinder.
The layer thickness difference within the short range of the second layer of each light receiving member (Nos. 2101F-2108F) can be seen from the results shown in Table 21F.
When these light receiving members (Sample Nos. 2101F-2108F) were subjected to image exposure with laser beam similarly as described in Example 42, the results as shown in Table 21F were obtained.
EXAMPLE 56
By means of the preparation device shown in FIG. 63, respective light receiving members for electrophotography (Sample Nos. 2201F-2204F) were prepared by carrying out layer formation on cylindrical aluminum substrates (Cylinder No. 150F) under the respective conditions as shown in Table 22F to Table 25F while changing the gas flow rate ratio of NO to SiH.sub.4 according to the change rate curve of the gas flow rate ratio as shown in FIG. 66 to FIG. 69 with lapse of time for layer formation.
The thus prepared light receiving members were subjected to evaluation of characteristics, following the same conditions and the same procedure as in Example 42. As the result, in each sample, no interference fringe pattern was observed at all with naked eyes, and suffuciently good electrophotographic characteristics could be exhibited as suited for the object of the present invention.
EXAMPLE 57
By means of the preparation device shown in FIG. 63, light receiving member for electrophotography was prepared by carrying out layer formation on cylindrical aluminum substrates (Cylinder No. 105) under the respective conditions as shown in Table 26F while changing the gas flow rate ratio of NO to SiH.sub.4 according to the change rate curve of the gas flow rate ratio as shown in FIG. 66 with lapse of time for layer formation.
The thus prepared light receiving member was subjected to evaluation of characteristics, following the same conditions and the same procedure as in Example 42. As the result, in the sample, no interference fringe pattern was observed at all with naked eyes, and sufficiently good electrophotographic characteristics could be exhibited as suited for the object of the present invention.
EXAMPLE 58
By means of the preparation device shown in FIG. 12, respective light receiving members for electrophotography (Sample Nos. 2206F-2207F) were prepared by carrying out layer formation on cylidrical aluminum substrates (Cylinder No. 105F) under the respective conditions as shown in Table 27F to Table 28F while changing the gas flow rate ratio of NH.sub.3 to SiH.sub.4 and CH.sub.4 to SiH.sub.4 according to the change rate curve of the gas flow rate ratio as shown in FIG. 68 with lapse of time for layer formation.
The thus prepared light receiving members were subjected to evaluation of characteristics, following the same conditions and the same procedure as in Example 42. As the result, in each sample, no interference fringe pattern was observed at all with naked eyes, and sufficiently good electrophotographic characteristics could be exhibited as suited for the object of the present invention.
EXAMPLE 59
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2G.
Next, a light-receiving member for electrophotography photography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1G (Sample Nos. 201G-204G).
The first layer was formed while controlling each flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIGS. 22 and 36 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 2G.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 201G-204G).
EXAMPLE 60
By means of a lathe, four kinds of an aluminum substrate (length(L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 3G.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1G (Sample Nos. 301G-304G).
The first layer was formed while controlling each flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIGS. 23 and 37 be operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the lightreceiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 3G.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 301G-304G).
EXAMPLE 61
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: Pitch, D: depth) under the conditions shown in Table 5G.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4G (Sample Nos. 501G-504G).
The first layer was formed while controlling each flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIGS. 24 and 38 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 5G.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 501G-504G).
EXAMPLE 62
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 6G.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4G (Sample Nos. 601G-604G).
The first layer was formed while controlling each flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIGS. 25 and 39 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 6G.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 601G-604G).
EXAMPLE 63
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 8G.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 7G (Sample Nos. 801G-804G).
The first layer and the A layer were formed while controlling each flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 40 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 8G.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 64
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 10G.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 9G (Sample Nos. 1001G-1004G).
The first layer and the A layer were formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 41 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 10G.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fronge pattern observed and proved to be satisfactory for practical application.
EXAMPLE 65
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 12G.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in FIG. 11G (Sample Nos. 1201G-1204G)
The first layer and the A layer were formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 42 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 12G.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 66
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2H (Nos. 201-204).
Next, a light-receiving member for electrophotography of a-Si:H containing oxygen was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1H (Sample Nos. 201H-204H).
The a-(Si;Ge):H layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 22 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 2H (Sample Nos. 201H-204H).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 201H-204H).
EXAMPLE 67
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 4H (Nos. 401-404).
Next, a light-receiving member for electrophotography of a -Si:H containing carbon was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 3H (Sample Nos. 401H-404H).
The a-(Si;Ge): H layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 23 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 4H (Sample Nos. 401H-404H).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Samples No. 401H-404H).
EXAMPLE 68
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 6H (Nos. 601-604).
Next, a light-receiving member for electrophotography of a-Si:H containing nitrogen was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 5H (Sample Nos. 601H-604H).
The a-(Si;Ge): H layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 24 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 6H (Sample Nos. 601H-604H).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Samples No. 601H-604H).
EXAMPLE 69
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 8H (Nos. 801-804).
Next, a light-receiving member for electrophotography of a-Si:H containing nitrogen was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 7H (Sample Nos. 801H-804H).
The a-(Si;Ge):H layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 25 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 8H (Sample Nos. 801H-804H).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Samples No. 801H-804H).
EXAMPLE 70
Under the same conditions as in Example 69 except for changing NH.sub.3 gas employed in Example 69 to NO gas, a light-receiving member for electrophotography of a-Si:H containing oxygen was prepared.
The characteristics of the light-receiving layer thus obtained were evaluated, following the same conditions and the procedure as in Example 69. As the result, no interference fringe pattern was observed at all with the naked eye and the electrophotographic characteristics exhibited were satisfactorily good as suited for the objects of the present invention.
EXAMPLE 71
Under the same conditions as in Example 69 except for changing NH.sub.3 gas employed in Example 69 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si:H containing carbon was prepared.
The characteristics of the light-receiving layer thus obtained were evaluated, following the same conditions and the procedure as in Example 69. As the result, no interference fringe pattern was observed at all with the naked eye and the electrophotographic characteristics exhibited were satisfactorily good as suited for the objects of the present invention.
EXAMPLE 72
By means of the film deposition device shown in FIG. 20, light receiving member for electrophotography of a-Si:H containing oxygen was prepared following the same conditions as in Example 66 except for carrying out layer formation on cylindrical aluminum substrates (Cylinder No. 202) under the respective conditions as shown in Table 9H while changing the gas flow rate ratio of NO according to the change rate curve of the gas flow rate ratio as shown in FIG. 70 with lapse of time for layer formation.
The thus prepared light receiving member was subjected to evaluation of characteristics, following the same conditions and the same procedure as in Example 66. As the result, in the sample, no interference fringe pattern was observed at all with naked eyes, and sufficiently good electrophotographic characteristics could be exhibited as suited for the object of the present invention.
EXAMPLE 73
By means of the film deposition device shown in FIG. 20, light receiving member for electrophotography of a-Si:H containing nitrogen was prepared following the same conditions as in Example 69 except for carrying out layer formation on cylindrical aluminum substrate (Cylinder No. 202) under the respective conditions as shown in Table 10H while changing the gas flow rate ratio of NH.sub.3 according to the change rate curve of the gas flow rate ratio as shown in FIG. 71 with lapse of time for layer formation.
The thus prepared light receiving member was subjected to evaluation of characteristics, following the same conditions and the same procedure as in Example 69. As the result, in the sample, no interference fringe pattern was observed at all with naked eyes, and sufficiently good electrophotographic characteristics could be exhibited as suited for the object of the present invention.
EXAMPLE 74
By means of the film deposition device shown in FIG. 20, light receiving member for electrophotography a-Si:H containing oxygen was prepared following the same conditions as in Example 69 except for carrying out layer formation on cylindrical aluminum substrate (Cylinder No. 202) under the respective conditions as shown in Table 11H while changing the gas flow rate ratio of NO according to the change rate curve of the gas flow rate ratio as shown in FIG. 58 with lapse of time for layer formation.
The thus prepared light receiving member was subjected to evaluation of characteristics, following the same conditions and the same procedure as in Example 69. As the result, in the sample, no interference fringe pattern was observed at all with naked eyes, and sufficiently good electrophotographic characteristics could be exhibited as suited for the object of the present invention.
EXAMPLE 75
Under the same conditions as in Example 74 except for changing NO gas employed in Example 74 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si:H containing nitrogen was prepared.
The characteristics of the light-receiving layer thus obtained were evaluated, following the same conditions and the procedure as in Example 74. As the result, no interference fringe pattern was observed at all with the naked eye and the electrophotographic characteristics exhibited were satisfactorily good as suited for the objects of the present invention.
Example 76
Under the same conditions as in Example 74 except for changing NO gas employed in Example 74 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si:H containing carbon was prepared.
The characteristics of the light-receiving layer thus obtained were evaluated, following the same conditions and the procedure as in Example 74. As the result, no interference fringe pattern was observed at all with the naked eye and the electrophotographic characteristics exhibited were satisfactorily good as suited for the objects of the present invention.
EXAMPLE 77
By means of the film deposition device shown in FIG. 20, light receiving member for electrophotography of a-Si:H containing carbon was prepared following the same conditions as in Example 66 except for carrying out layer formation on cylindrical aluminum substrate (Cylinder No. 202) under the respective conditions as shown in Table 12H while changing the gas flow rate ratio of CH.sub.4 according to the change rate curve of the gas flow rate ratio as shown in FIG. 72 with lapse of time for layer formation.
The thus prepared light receiving member was subjected to evaluation of characteristics, following the same conditions and the same procedure as in Example 66. As the result, in the sample, no interference fringe pattern was observed at all with naked eyes, and sufficiently good electrophotographic characteristics could be exhibited as suited for the object of the present invention.
EXAMPLE 78
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2I (Nos. 201-204).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1I (Sample Nos. 201I-204I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 2I (Sample Nos. 201I-204I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 79
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 4I (Nos. 401-404).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 3I (Sample Nos. 401I-404I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 4I (Sample Nos. 401I-404I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 80
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 6I (Nos. 601-604).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 5I (Sample Nos. 601I-604I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 6I (Sample Nos. 601I-604I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image gas free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 81
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 8I (Nos. 801-804).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 7I (Sample Nos. 801I-804I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 8I (Sample Nos. 801I-804I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 82
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 10I (Cylinder Nos. 1001-1004).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 9I (Sample Nos. 1001I-1004I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 10I (Sample Nos. 1001I-1004I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 83
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 12I (Cylinder Nos. 1201-1204).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 11I (Sample Nos. 1201I-1204I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 12I (Sample Nos. 1201I-1204I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 84
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 14I (Cylinder Nos. 1401-1404).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 13I. During the formation of the layer, the flow rate ratio of CH.sub.4 gas to SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 73 (Sample Nos. 1401I-404I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 14I (Sample Nos. 1401I-1404I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 85
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 16I (Cylinder Nos. 1601-1604).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 15I. During the formation of the layer, the flow rate ratio of NO gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 74 (Sample Nos. 1601I-1604I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron micoscope to obtain the results as shown in Table 16I (Sample Nos. 1601I-1604I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 86
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 18I (Cylinder Nos. 1801-1804)
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 17I. During the formation of the layer, the flow rate ratio of NH.sub.3 gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 57 (Sample Nos. 1801I-1804I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 18I (Sample Nos. 1801I-1804I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 87
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 20I (Cylinder Nos. 2001-2004).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 19I. During the formation of the layer, the flow rate ratio of CH.sub.4 gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 75 (Sample Nos. 2001I-2004I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 20I (Sample Nos. 2001I-2004I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 88
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 22I (Cylinder Nos. 2201-2204).
Next, a light receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 21I. During the formation of the layer, the flow rate ratio of NO gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 76 (Sample Nos. 2201I-2204I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 22I (Sample Nos. 2201I-2204I).
The light-receiving member for electro-photography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 89
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 24I (Cylinder Nos. 2401-2404).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 23I. During the formation of the layer, the flow rate ratio of NH.sub.3 gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 77 (Sample Nos. 2401I-2404I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 24I (Sample Nos. 2401I-2404I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 90
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 26I (Cylinder Nos. 2601-2604).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 25I (Sample Nos. 2601I-2604I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 26I (Sample Nos. 2601I-2604I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 91
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 28I (Cylinder Nos. 2801-2804).
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 27I (Sample Nos. 2801I-2804I).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 28I (Sample Nos. 2801I-2804I).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 92
For Examples 78 through 91, light-receiving members for electrophotography (Samples No. 2901I-2956I) were prepared by use of PH.sub.3 gas diluted with H.sub.2 to 3000 vol.ppm in place of B.sub.2 H.sub.6 gas diluted with H.sub.2 to 3000 vol.ppm.
Other preparation conditions were the same as in Examples 78 through 91.
These light-receiving members for electrophotography were each subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. Each image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 93
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2J (Cylinder Nos. 201-204).
Next, a light-receiving member for electrophotography of a-Si was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1J (Sample Nos. 201J-204J).
The a-SiGe:H:B:O layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 22 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 2J.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 201J-204J).
EXAMPLE 94
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 3J (Nos. 301-304).
Next, a light-receiving member for electrophotography of a-Si was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1J (Sample Nos. 301J-304J).
The a-SiGe:H:B:O layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 23 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 3J.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 301J-304J).
EXAMPLE 95
Under the same conditions as and following the same manner as in Example 93 except for changing NO gas employed in Example 93 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 401J-404J).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 401J-404J).
EXAMPLE 96
Under the same conditions as and following the same manner as in Example 93 except for changing NO gas employed in Example 93 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 501J-504J).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 501J-504J).
EXAMPLE 97
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 5J (Nos. 601-604).
Next, a light-receiving member for electrophotography of a-Si was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4J (Sample Nos. 601J-604J).
The a-SiGe:H:B:N layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 24 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 5J.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 601J-604J).
EXAMPLE 98
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 6J (Nos. 701-704).
Next, a light-receiving member for electrophotography of a-Si was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4J (Sample Nos. 701J-704J).
The a-SiGe:H:B:N layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 25 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 6J.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 701J-704J).
EXAMPLE 99
Under the same conditions as and following the same manner as in Example 97 except for changing NH.sub.3 gas employed in Example 97 to NO gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 801J-804J).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 801J-804J).
EXAMPLE 100
Under the same conditions as and following the same manner as in Example 97 except for changing NH.sub.3 gas employed in Example 97 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 901J-904J).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 901J-904J).
EXAMPLE 101
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 8J.
Next, a light-receiving member for electrophotography of a-Si:H was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 7J (Sample Nos. 1001J-1004J).
The a-SiGe:H:B:C layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 22 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
During the formation of the layer, the flow rate ratio of CH.sub.4 gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 72.
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 8J.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 102
Under the same conditions as and following the same manner as in Example 101 except for changing CH.sub.4 gas employed in Example 101 to NO gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1101J-1104J).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1101J-1104J).
EXAMPLE 103
Under the same conditions as and following the same manner as in Example 101 except for changing CH.sub.4 gas employed in Example 101 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1201J-1204J).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1201J-1204J).
EXAMPLE 104
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 10J.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 9J (Sample Nos. 1301J-1304J).
The a-SiGe:H:B:O layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 24 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
During the formation of the layer, the flow rate ratio of NO gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 78.
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 10J.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 105
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 12J.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 11J (Sample Nos. 1401J-1404J).
The a-SiGe:H:B:N layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 25 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
During the formation of the layer, the flow rate ratio of NH.sub.3 gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 79.
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 12J.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 106
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 14J.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 13J (Sample Nos. b 1501J-1504J).
The a-SiGe:H:B:C layer as the first layer was formed while controlling the flow rate of GeH.sub.4 and SiH.sub.4 as shown in FIG. 23 by operating mass flow controllers 2008 and 2007 for GeH.sub.4 and SiH.sub.4, respectively, using a computer (HP9845B).
During the formation of the layer, the flow rate ratio of CH.sub.4 gas to the sum total of GeH.sub.4 gas and SiH.sub.4 gas was changed following the change in rate curve as shown in FIG. 80.
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 14J.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 107
For Examples 93 through 106, light-receiving members for electrophotography (Samples No. 1601J-1656J) were prepared by use of PH.sub.3 gas diluted with H.sub.2 to 3000 vol.ppm in place of B.sub.2 H.sub.6 gas diluted with H.sub.2 to 3000 vol.ppm.
Other preparation conditions were the same as in Example 93 through 106.
These light-receiving members for electrophotography were each subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. Each image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 108
By means of a lathe, an aluminum substrate was worked to have the surface characteristic of No. 101 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following various procedures under the conditions as shown in Table 2K, a light-receiving member for electrophotography of A-Si type was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si type thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.1 .mu.m between the center and both ends of the first layer and 2 .mu.m between the center and both ends of the second layer, with the layer thickness difference at the minute portion being 0.02 .mu.m in the first layer and 0.3 .mu.m in the second layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 109
By means of a lathe, an aluminum substrate was worked by the same manner as in Example 108 to have the surface characteristic of No. 102 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the same procedures as in Example 1 under the conditions as shown in Table 3K, a light-receiving member for electrophotography of A-Si type was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si type thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.1 .mu.m between the center and both ends of the first layer and 2 .mu.m between the center and both ends of the second layer, with the layer thickness difference at the minute portion being 0.03 .mu.m in the first layer and 0.3 .mu.m in the second layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 110
By means of a lathe, an aluminum substrate was worked by the same manner as in Example 108 to have the surface characteristic of No. 103 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the same procedures as in Example 108 under the conditions as shown in Table 4K, a light-receiving member for electrophotography of A-Si type was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si type thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.6 .mu.m between the center and both ends of the first layer and 2 .mu.m between the center and both ends of the second layer, with the layer thickness difference at the minute portion being 0.1 .mu.m in the first layer and 0.3 .mu.m in the second layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 111
By means of a lathe, an aluminum substrate was worked by the same manner as in Example 108 to have the surface characteristic of No. 104 A shown in Table 1A.
Next, by use of the deposition device shown in FIG. 20, following the same procedures as in Example 108 under the conditions as shown in Table 5K, a light-receiving member for electrophotography of A-Si type was deposited on the above aluminum substrate.
The layer thickness distribution of the light-receiving member for electrophotography of A-Si type thus prepared was measured by an electron microscope to find that the average layer thickness difference was 0.8 .mu.m between the center and both ends of the first layer and 2 .mu.m between the center and both ends of the second layer, with the layer thickness difference at the minute portion being 0.15 .mu.m in the first layer and 0.3 .mu.m in the second layer.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 112
Under the same conditions as and following the same manner as in Example 110 except for changing CH.sub.4 gas employed in Example 110 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 113
Under the same conditions as and following the same manner as in Example 110 except for changing NO gas employed in Example 110 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 114
By means of a lathe, an aluminum substrate (length (L): 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 7K.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 6K (Sample Nos. 701K-704K).
The boron-containing layer was formed while controlling the flow rate of B.sub.2 H.sub.6 /H.sub.2 as shown in Fog. 60 and the nitrogen-containing layer was formed while controlling the flow rate of NH.sub.3 as shown in FIG. 56, by operating mass flow controllers 2010 and 2009 for B.sub.2 H.sub.6 /H.sub.2 and NH.sub.3, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 7K.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 115
Under the same conditions as and following the same manner as in Example 114 except for changing NH.sub.3 gas employed in Example 114 to NO gas, a light-receiving member for electrophotography of a-Si type
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 801K-804K).
EXAMPLE 116
Under the same conditions as and following the same manner as in Example 114 except for changing NH.sub.3 gas employed in Example 114 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 901K-904K).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 901K-904K).
EXAMPLE 117
By means of a lathe, an aluminum substrate (length (L) 357 mm, outerdiameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 9K.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 8K (Sample Nos. 1001K-1004K).
The boron-containing layer was formed while controlling the flow rate of B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 61 and the carbon-containing layer was formed while controlling the flow rate of CH.sub.4 as shown in FIG. 57, by operating mass flow controllers 2010 and 2009 for B.sub.2 H.sub.6 /H.sub.2 and CH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 9K.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 118
Under the same conditions as and following the same manner as in Example 117 except for changing CH.sub.4 gas employed in Example 117 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1101K-1104K).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1101K-1104K).
EXAMPLE 119
Under the same conditions as and following the same manner as in Example 117 except for changing CH.sub.4 gas employed in Example 117 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1201K-1204K).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1201K-1204K).
EXAMPLE 120
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 11K.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 10K (Sample Nos. 1301K-1304K).
The boron-containing layer was formed while controlling the flow rate of B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 62 and the oxygen-containing layer was formed while controlling the flow rate of NO as shown in FIG. 58, by operating mass flow controllers 2010 and 2009 for B.sub.2 H.sub.6 /H.sub.2 and NO, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 11K.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 121
Under the same conditions as and following the same manner as in Example 120 except for changing NO gas employed in Example 120 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1401K-1404K).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1401K-1404K).
EXAMPLE 122
Under the same conditions as and following the same manner as in Example 120 except for changing NO gas employed in Example 120 to CH.sub.4 gas a light-receiving member for electrophotography of a-Si type (Sample Nos. 1501K-1504K).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any inferference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1501K-1504K).
EXAMPLE 123
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 13K.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 12K (Sample Nos. 1601K-1604K).
The boron-containing layer was formed while controlling the flow rate of B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 39 and the nitrogen-containing layer was formed while controlling the flow rate of NH.sub.3 as shown in FIG. 59, by operating mass flow controllers 2010 and 2009 for B.sub.2 H.sub.6 /H.sub.2 and NH.sub.3, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 13K.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 124
Under the same conditions as and following the same manner as in Example 123 except for changing NH.sub.3 gas employed in Example 123 to NO gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1701K-1704K).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1701K-1704K).
EXAMPLE 125
Under the same conditions as and following the same manner as in Example 124 except for changing NH.sub.3 gas employed in Example 124 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1801K-1804K).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1801K-1804K).
EXAMPLE 126
For Examples 108 through 125, light-receiving members for electrophotography (Samples No. 1901K- 1950K) were prepared by use of PH.sub.3 gas diluted with H.sub.2 to 3000 vol. ppm in place of B.sub.2 H.sub.6 gas diluted with H.sub.2 to 3000 vol. ppm.
Other preparation conditions were the same as in Examples 108 through 125.
These light-receiving members for electrophotography were each subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. Each image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 127
By means of a lathe, four kinds of aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) were worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2L.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1L (Sample Nos. 101L-104L).
The first layer was formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIGS. 22 and 36 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 2L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Samples Nos. 101K-104L).
EXAMPLE 128
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 3L.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 1L (Sample Nos. 201L-204L).
The first layer was formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIGS. 23 and 37 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thicknews of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 3L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 201L-204L).
EXAMPLE 129
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 5L.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4L (Sample Nos. 301L-304L).
The first layer was formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIGS. 24 and 38 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 5L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 301L-304L).
EXAMPLE 130
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 6L.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 4L (Sample Nos. 401L-404L).
The first layer was formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIGS. 25 and 39 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 6L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 401L-404L).
EXAMPLE 131
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 8L.
Next, a light-receiving rember for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 7L (Sample Nos. 501L-504L).
The first layer and the A layer was formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 40 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 8L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 132
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 10L.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 9L (Sample Nos. 601L-604L).
The first layer and the A layer was formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 41 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 10L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 133
By means of a lathe, four kinds of an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 12L.
Next, a light-receiving member for electrophotography of a-Si type was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 11L (Sample Nos. 701L-704L).
The first layer and the A layer was formed while controlling the flow rate of GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 42 by operating mass flow controllers 2008, 2007 and 2010 for GeH.sub.4, SiH.sub.4 and B.sub.2 H.sub.6 /H.sub.2, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 12L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 701L-704L).
EXAMPLE 134
Under the same conditions as and following the same manner as in Example 127 except for changing NO gas employed in Example 127 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 801L-804L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 801L-804L).
EXAMPLE 135
Under the same conditions as and following the same manner as in Example 127 except for changing NO gas employed in Example 127 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 901L-904L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 901L-904L).
EXAMPLE 136
Under the same conditions as and following the same manner as in Example 129 except for changing NH.sub.3 gas employed in Example 129 to NO gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1001L-1004L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1001L-1004L).
EXAMPLE 137
Under the same conditions as and following the same manner as in Example 129 except for changing NH.sub.3 gas employed in Example 129 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1101L-1104L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1101L-1104L).
EXAMPLE 138
Under the same conditions as and following the same manner as in Example 131 except for changing CH.sub.4 gas employed in Example 131 to NO gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1201L-1204L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1201L-1204L).
EXAMPLE 139
Under the same conditions as and following the same manner as in Example 131 except for changing CH.sub.4 gas employed in Example 131 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1301L-1304L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1301L-1304L).
EXAMPLE 140
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 14L.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 13L (Samples Nos. 1401L-1404L).
The boron-containing layer was formed while controlling the flow rate of SiH.sub.4, GeH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 as shown in FIG. 52 and the nitrogen atom-containing layer was formed while controlling the flow rate of NH.sub.3 as shown in FIG. 56, by operating mass flow controllers 2007, 2008, 2010 and 2009 for SiH.sub.4, GeH.sub.4, B.sub.2 H.sub.6 /H.sub.2 and NH.sub.3, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 14L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 141
Under the same conditions as and following the same manner as in Example 140 except for changing NH.sub.3 gas employed in Example 140 to NO gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1501L-1504L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1501L-1504L).
EXAMPLE 142
Under the same conditions as and following the same manner as in Example 140 except for changing NH.sub.3 gas employed in Example 140 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1601L-1604L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1601L-1604L).
EXAMPLE 143
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 16L.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 15L (Sample Nos. 1701L-1704L).
The flow rate of SiH.sub.4, GeH.sub.4, and B.sub.2 H.sub.6 /H.sub.2 were controlled as shown in FIG. 53 and the carbon-containing layer was formed while controlling the flow rate of CH.sub.4 as shown in FIG. 57, by operating mass flow controllers 2007, 2008, 2010 and 2009 for SiH.sub.4, GeH.sub.4, B.sub.2 H.sub.6 /H.sub.2 and CH.sub.4, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 16L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 144
Under the same conditions as and following the same manner as in Example 143 except for changing CH.sub.4 gas employed in Example 143 to NO gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1801L-1804L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1801L-1804L).
EXAMPLE 145
Under the same conditions as and following the same manner as in Example 143 except for changing CH.sub.4 gas employed in Example 143 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 1901L-1904L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 1901L-1904L).
EXAMPLE 146
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 18L.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 17L (Sample Nos. 2001L-2004L).
The flow rate of SiH.sub.4, GeH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 were controlled as shown in FIG. 54 and the oxygen atom-containing layer was formed while controlling the flow rate of NO as shown in FIG. 58, by operating mass flow controllers 2007, 2008, 2010 and 2009 for SiH.sub.4, GeH.sub.4, B.sub.2 H.sub.6 /H.sub.2 and NO, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving members thus prepared was measured using an electron microscope to obtain the results as shown in Table 18L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 147
Under the same conditions as and following the same manner as in Example 146 except for changing NO gas employed in Example 146 to NH.sub.3 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 2101L-2104L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 2101L-2104L).
EXAMPLE 148
Under the same conditions as and following the same manner as in Example 146 except for changing NO gas employed in Example 146 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 2201L-2204L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 2201L-2204L).
EXAMPLE 149
By means of a lathe, an aluminum substrate (length (L): 357 mm, outer diameter (r): 80 mm) was worked as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 20L.
Next, a light-receiving member for electrophotography was prepared following various procedures using the film deposition device in FIG. 20 under the conditions as shown in Table 19L (Sample Nos. 2301L-2304L).
The flow rate of SiH.sub.4, GeH.sub.4 and B.sub.2 H.sub.6 /H.sub.2 were controlled as shown in FIG. 55 and the nitrogen-containing layer was formed while controlling the flow rate of NH.sub.3 as shown in FIG. 59, by operating mass flow controllers 2007, 2008, 2010 and 2009 for SiH.sub.4, GeH.sub.4, B.sub.2 H.sub.6 /H.sub.2 and NH.sub.3, respectively, using a computer (HP9845B).
The thickness of each layer of the light-receiving member thus prepared was measured using an electron microscope to obtain the results as shown in Table 20L.
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
EXAMPLE 150
Under the same conditions as and following the same manner as in Example 149 except for changing NH.sub.3 gas employed in Example 149 to NO gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 2401L-2404L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 2401L-2404L).
EXAMPLE 151
Under the same conditions as and following the same manner as in Example 149 except for changing NH.sub.3 gas employed in Example 149 to CH.sub.4 gas, a light-receiving member for electrophotography of a-Si type (Sample Nos. 2501L-2504L).
The light-receiving member for electrophotography as prepared above was subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. The image was free from any interference fringe pattern observed and proved to be satisfactory for practical application (Sample Nos. 2501L-2504L).
EXAMPLE 152
For Examples 127 through 151, light-receiving members for electrophotography (Sample Nos. 2601L-2700L) were prepared by use of PH.sub.3 gas diluted with H.sub.2 to 3000 vol. ppm in place of B.sub.2 H.sub.6 gas diluted with H.sub.2 to 3000 vol. ppm.
Other preparation conditions were the same as in Example 127 through 151.
These light-receiving members for electrophotography were each subjected to image exposure by means of a device as shown in FIG. 26 (wavelength of laser beam: 780 nm, spot diameter 80 .mu.m), followed by development and transfer to obtain an image. Each image was free from any interference fringe pattern observed and proved to be satisfactory for practical application.
TABLE 1A______________________________________ Substrate No.Item 101A 102A 103A 104A______________________________________Pitch 50 40 25 10(.mu.m)Depth 2.1 1.7 0.8 0.6(.mu.m)Angle 5.0 4.8 3.7 6.8(degree)______________________________________
TABLE 2A______________________________________ Gas Discharging Deposition LayerStart- flow rate power rate thicknessing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 10 1layer GeH.sub.4 100Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 3A______________________________________ Gas Discharging Deposition LayerStart- flow rate power rate thicknessing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 14 3layer SiH.sub.4 50 GeH.sub.4 100Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 4A______________________________________ Gas Discharging Deposition LayerStart- flow rate power rate thicknessing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 12 5layer SiH.sub.4 100 GeH.sub.4 50Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 5A______________________________________ Gas Discharging Deposition LayerStart- flow rate power rate thicknessing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 8 7layer SiH.sub.4 135 GeH.sub.4 15Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 1B______________________________________ Dis- De- Layer charging position thick-Start- Gas flow rate power rate nessing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 2B______________________________________ Substrate No. 201B 202B 203B 204B______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.51 0.44 0.41 0.61 layer thickness of minute portion (.mu.m)______________________________________
TABLE 3B______________________________________ Substrate No. 301B 302B 303B 304B______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.45 0.42 0.39 0.50 layer thickness of minute portion (.mu.m)______________________________________
TABLE 4B______________________________________ Dis- De- Layer charging position thick-Start- Gas flow rate power rate nessing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 5B______________________________________ Substrate No. 501B 502B 503B 504B______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.42 0.40 0.38 0.48 layer thickness of minute portion (.mu.m)______________________________________
TABLE 6B______________________________________ Substrate No. 601B 602B 603B 604B______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.40 0.38 0.36 0.45 layer thickness of minute portion (.mu.m)______________________________________
TABLE 1C______________________________________ De-Layer Gas Discharging position Layerconsti- Starting flow rate power rate thicknesstution gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 10 3layer SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm)Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 2C______________________________________ No. 201C 202C 203C 204C______________________________________Surface Pitch (.mu.m) 50 40 25 10suructure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThick- Average difference in layer 1 1 1 1ness of thickness between center andlight both ends of first layerreceiving (.mu.m)layer Difference in layer 0.2 0.15 0.1 0.25 thickness of minute portion in first layer (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion in second layer (.mu.m)______________________________________
TABLE 3C______________________________________ Dis- De- Layer Gas flow charging position thick-Layer Start- rate power rate nessconstitution ing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First layer H.sub.2 300 100 10 1 SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 300 vol ppm)Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 300 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300______________________________________
TABLE 4C__________________________________________________________________________ No. 401C 402C 403C 404C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.1 0.1 0.1 0.1of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.04 0.03 0.02 0.05 of minute portion in first layer (.mu.m) Second Average difference in layer 1.5 1.5 1.5 1.5 layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 5C______________________________________ Dis- De- Layer Gas flow charging position thick-Layer Start- rate power rate nessconstitution ing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First layer H.sub.2 300 100 10 1 SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 50 (= 3000 vol ppm)Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300______________________________________
TABLE 6C__________________________________________________________________________ No. 601C 602C 603C 604C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.12 0.12 0.12 0.12of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m) Second Average difference in layer 1.5 1.5 1.5 1.5 layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.4 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 7C______________________________________ Dis- De- Layer Gas flow charging position thick-Layer Start- rate power rate nessconstitution ing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First layer H.sub.2 300 100 10 1 SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 150 (= 3000 vol ppm)Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300______________________________________
TABLE 8C__________________________________________________________________________ No. 801C 802C 803C 804C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.1 0.1 0.1 0.1of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m) Second Average difference in layer 1.6 1.6 1.6 1.6 layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.13 0.11 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.1 3.1 3.1 3.1 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.4 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 9C______________________________________ Dis- De- Layer Gas flow charging position thick-Layer Start- rate power rate nessconstitution ing gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First layer H.sub.2 300 100 10 1 SiH.sub.4 100 GeH.sub.4 100Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300______________________________________
TABLE 10C__________________________________________________________________________ No. 1001C 1002C 1003C 1004C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.12 0.12 0.12 0.12of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5Layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.39 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 11C__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 100 10 2 B SiH.sub.4 100 GeH.sub.4 100Second layer H.sub.2 300 300 24 20 SiH.sub.4 300 B.sub.2 H.sub.6 /H.sub.2 50 (= 50 vol ppm)__________________________________________________________________________
TABLE 12C__________________________________________________________________________ No. 1201C 1202C 1203C 1204C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.1 0.1 0.1 0.12 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.22 0.22 0.22 0.22 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.11 0.1 0.1 0.13 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.55 0.4 0.39 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 13C__________________________________________________________________________ Gas Deposition LayerLayer flow rate Discharging rate thicknessconstitution Starting gas (SCCM) power (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A SiH.sub.4 100 GeH.sub.4 100 Layer H.sub.2 300 100 10 2 B SiH.sub.4 200 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 50 vol ppm)Second layer H.sub.2 300 300 24 20 SiH.sub.4 300 B.sub.2 H.sub.6 /H.sub.2 100 (= 50 vol ppm)__________________________________________________________________________
TABLE 14C__________________________________________________________________________No. 1401C 1402C 1403C 1404C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.1 0.1 0.1 0.12 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.22 0.22 0.22 0.22 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.11 0.1 0.1 0.13 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.55 0.4 0.39 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 15C______________________________________ Deposi- LayerLayer Gas Discharging tion thick-Consti- Starting Flow rate power rate nesstution Gas (SCCM) (W) (.ANG./Sec) (.mu.)______________________________________First H.sub.2 300 100 10 5layer GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm)Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 16C__________________________________________________________________________ No. 1601C 1602C 1603C 1604C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 1.5 1.5 1.5 1.5of light thickness between center andreceiving both ends of first layer (.mu.m)layer Difference in layer thickness of 0.2 0.12 0.1 0.3 minute portion in first layer (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of second layer (.mu.m) Difference in layer thickness of 0.55 0.4 0.3 0.6 minute portion in second layer (.mu.m)__________________________________________________________________________
TABLE 17C__________________________________________________________________________ Gas Deposition Layer flow rate Discharging rate thicknessLayer constitution Starting gas (SCCM) power (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 200 B.sub.2 H.sub.6 /H.sub.2 50 (= 100 vol ppm)Second Layer A H.sub.2 300 100 8 3layer SiH.sub.4 250 B.sub.2 H.sub.6 /H.sub.2 50 (= 100 vol ppm) Layer B H.sub.2 300 300 24 20 SiH.sub.4 300 B.sub.2 H.sub.6 /H.sub.2 50 (= 100 vol ppm)__________________________________________________________________________
TABLE 18C__________________________________________________________________________No. 1801C 1802C 1803C 1804C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness of 0.14 0.12 0.1 0.16 minute portion in first layer (.mu.m)Second Average difference in layer 0.3 0.3 0.3 0.3layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.14 0.13 0.21 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.57 0.4 0.3 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 19C__________________________________________________________________________ Gas Deposition LayerLayer flow rate Discharging rate thicknessconstitution Starting gas (SCCM) power (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 50 (= 3000 vol ppm)Second Layer H.sub.2 300 100 8 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 20C__________________________________________________________________________No. 2001C 2002C 2003C 2004C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness of 0.13 0.11 0.1 0.2 minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.13 0.12 0.11 0.2 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.5 0.4 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 21C__________________________________________________________________________ Gas Deposition LayerLayer flow rate Discharging rate thicknessconstitution Starting gas (SCCM) power (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 150 (= 3000 vol ppm)Second Layer H.sub.2 300 100 8 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 22C__________________________________________________________________________No. 2201C 2202C 2203C 2204C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness of 0.12 0.11 0.1 0.14 minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 23C__________________________________________________________________________ Gas Deposition Layer flow rate Discharging rate thicknessLayer constitution Starting gas (SCCM) power (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50Second Layer A H.sub.2 300 100 8 3layer GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer B H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 24C__________________________________________________________________________No. 2401C 2402C 2403C 2404C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness of 0.12 0.11 0.1 0.14 minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 25C__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 SiH.sub.4 50Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 26C__________________________________________________________________________ No. 2601C 2602C 2603C 2604C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.13 0.11 0.1 0.15 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.2 0.2 0.2 0.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.5 0.44 0.4 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 27C__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm)Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 28C__________________________________________________________________________ No. 2801C 2802C 2803C 2804C__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m) Difference in layer 0.11 0.11 0.1 0.13 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.21 0.21 0.21 0.21 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.4 0.35 0.3 0.5of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 1D______________________________________ Dis- char- De- Layer ging position thick-Starting Gas flow rate power rate nessgas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 GeH.sub.4 + SiH.sub.4 = (= 3000 100 vol ppm)Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 2D______________________________________ Sample No. 201D 202D 203D 204D______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThick- Average difference in layer 1 1 1 1ness thickness between center andof light both ends of first layerreceiving (.mu.m)layer Difference in layer 0.2 0.15 0.1 0.25 thickness of minute portion in first layer (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.51 0.44 0.41 0.61 thickness of minute portion in second layer (.mu.m)______________________________________
TABLE 3D______________________________________ Sample No. 301D 302D 303D 304D______________________________________Surface Pitch (.mu.m) 50 45 20 15structure Depth (.mu.m) 2.41 1.89 0.65 0.89of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThick- Average difference in layer 1 1 1 1ness thickness between center andof light both ends of first layerreceiving (.mu.m)layer Difference in layer 0.19 0.14 0.1 0.25 thickness of minute portion in first layer (.mu.m) Average difference in layer 3.1 3.1 3.1 3.1 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.45 0.42 0.39 0.50 thickness of minute portion in second layer (.mu.m)______________________________________
TABLE 4D__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 3 GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) GeH.sub.4 + SiH.sub.4 = 100Second Layer H.sub.2 300 100 8 5 A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 5D__________________________________________________________________________ Sample No. 501D 502D 503D 504D__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.1 0.1 0.1 0.1of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.04 0.03 0.02 0.05 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.M) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion on layer B (.mu.m)__________________________________________________________________________
TABLE 6D__________________________________________________________________________ Sample No. 601D 602D 603D 604D__________________________________________________________________________Surface Pitch (.mu.m) 55 45 20 15structure Depth (.mu.m) 2.41 1.89 0.65 0.89of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.1 0.1 0.1 0.1of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.04 0.03 0.02 0.05 of minute portion in first layer (.mu.m)Second Average difference in layer 1.49 1.49 1.49 1.49layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 2.9 2.9 2.9 2.9 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.51 0.44 0.41 0.61 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 7D______________________________________ Dis- Depo-Layer charging sition Layerconsti- Starting Gas flow rate power rate thicknesstution gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 10 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) GeH.sub.4 + SiH.sub.4 = 100Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 8D______________________________________ Sample No. 801D 802D 803D 804D______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThick- Average difference in layer 1 1 1 1ness thickness between center andof light both ends of first layerreceiving (.mu.m)layer Difference in layer 0.2 0.15 0.1 0.25 thickness of minute portion in first layer (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion in second layer (.mu.m)______________________________________
TABLE 9D__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 3 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 50 (= 3000 vol ppm) GeH.sub.4 + SiH.sub.4 = 100Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 10D__________________________________________________________________________ Sample No. 1001D 1002D 1003D 1004D__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.12 0.12 0.12 0.12of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.M) Difference in layer 0.55 0.4 0.4 0.6 thickness of minute portion on layer B (.mu.m)__________________________________________________________________________
TABLE 11D__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 3 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 12D__________________________________________________________________________ Sample No. 1201D 1202D 1203D 1204D__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.12 0.12 0.12 0.12of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.M) Difference in layer 0.55 0.4 0.39 0.6 thickness of minute portion on layer B (.mu.m)__________________________________________________________________________
TABLE 13D__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 1.5layer A GeH.sub.4 100 .fwdarw. 50 SiH.sub.4 0 .fwdarw. 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 100 10 1.5 B GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 14D__________________________________________________________________________ No. 1401D 1402D 1403D 1404D__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.1 0.1 0.1 0.12 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.22 0.22 0.22 0.22 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.11 0.1 0.1 0.13 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.55 0.4 0.39 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 2E__________________________________________________________________________ Discharging Deposition LayerStarting Gas flow rate power rate thicknessgas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 5 2layer GeH.sub.4 100 SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 B.sub.2 H.sub.6 / (= 3000 vol ppm) (GeH.sub.4 + SiH.sub.4) = 3/100 .fwdarw. 0Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 3E__________________________________________________________________________ Discharging Deposition LayerStarting Gas flow rate power rate thicknessgas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 14 3layer SiH.sub.4 50 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 B.sub.2 H.sub.6 / (= 3000 vol ppm) (GeH.sub.4 + SiH.sub.4) = 5/100 .fwdarw. 0Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 4E__________________________________________________________________________ Discharging Deposition LayerStarting Gas flow rate power rate thicknessgas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 12 5layer SiH.sub.4 100 GeH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 B.sub.2 H.sub.6 / (= 3000 vol ppm) (GeH.sub.4 + SiH.sub.4) = 1/100 .fwdarw. 0Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 5E__________________________________________________________________________ Discharging Deposition LayerStarting Gas flow rate power rate thicknessgas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 8 7layer SiH.sub.4 135 GeH.sub.4 15 B.sub.2 H.sub.6 /H.sub.2 B.sub.2 H.sub.6 / (= 3000 vol ppm) (GeH.sub.4 + SiH.sub.4) = 1/100 .fwdarw. 0Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 6E__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 150 .fwdarw. 110 (= 3000 vol ppm)Second Layer H.sub.2 300 100 10 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 110 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 7E__________________________________________________________________________ No. 701E 702E 703E 704E__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.12 0.11 0.1 0.14 of minute portion in first layer (.mu.m) Second Average difference in layer 0.4 0.4 0.4 0.4 layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 8E__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 SiH.sub.4 50Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 9E__________________________________________________________________________ Sample No. 901E 902E 903E 904E__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.13 0.11 0.1 0.15 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.2 0.2 0.2 0.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.5 0.4 0.4 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 10E__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 50 .fwdarw. 0 (= 3000 vol ppm)Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 11E__________________________________________________________________________ No. 1101E 1102E 1103E 1104E__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.11 0.11 0.1 0.13 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.21 0.21 0.21 0.21 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.4 0.35 0.3 0.5of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 12E__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 50 .fwdarw. 25 (= 3000 vol ppm)Second Layer H.sub.2 300 100 8 3layer A GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 25 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 13E__________________________________________________________________________ No. 1301E 1302E 1303E 1304E__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.12 0.11 0.1 0.14 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 1F______________________________________No.101F 102F 103F 104F 105F 106F 107F 108F______________________________________Pitch 600 200 100 50 40 25 10 5.0(.mu.m)Depth 1.0 10 1.8 2.1 1.7 0.8 0.2 2(.mu.m)Angle 0.2 5.7 2.1 5.0 4.8 3.7 2.3 38(degree)______________________________________
TABLE 2F______________________________________ NO. 111F 112F 113F 114F 115F 116F 117F 118F______________________________________Cylinder 101 102 103 104 105 106 107 108NO.Difference 0.06 0.08 0.16 0.18 0.41 0.31 0.11 3.2in layerthickness(.mu.m)Interference X X .circle. .circle. .circleincircle. .circleincircle. .DELTA. Xfringe______________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 3F______________________________________ No. 121F 122F 123F 124F 125F 126F 127F 128F______________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in 0.05 0.041 0.1 0.19 0.31 0.22 0.1 2.6layer thick-ness offirst layer(.mu.m)Difference in 0.06 0.07 0.11 0.22 0.41 0.32 0.1 3.6layer thick-ness ofsecond layer(.mu.m)Interference X X .circle. .circleincircle. .circleincircle. .circleincircle. .DELTA. Xfringe______________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 4F______________________________________ High frequency Layer Starting Flow rate power thicknessLayer gas (SCCM) (W) (.mu.)______________________________________First layer H.sub.2 300 160 3 SiH.sub.4 100 GeH.sub.4 50 NH.sub.3 30Second layer H.sub.2 300 300 20 SiH.sub.4 300______________________________________
TABLE 5F______________________________________ NO. 401F 402F 403F 404F 405F 406F 407F 408F______________________________________Cylinder 101 102 103 104 105 106 107 108NO.Difference 0.07 0.08 0.17 0.20 0.42 0.33 0.11 2.8in layerthickness(.mu.m)Interference X X .circle. .circleincircle. .circleincircle. .circleincircle. .DELTA. Xfringe______________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 6F__________________________________________________________________________ High frequency Layer Starting Flow rate power thicknessLayer gas (SCCM) (W) (.mu.)__________________________________________________________________________First layer H.sub.2 300 160 5 SiH.sub.4 100 GeH.sub.4 50 NH.sub.3 15Second layer H.sub.2 300 200 20 SiH.sub.4 300 NH.sub.3 15__________________________________________________________________________
TABLE 7F______________________________________ No. 501F 502F 503F 504F 505F 506F 507F 508F______________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in 0.05 0.07 0.1 0.21 0.31 0.22 0.1 2.6layer thick-ness offirst layer(.mu.m)Difference in 0.06 0.08 0.1 0.2 0.41 0.35 0.1 3.5layer thick-ness ofsecond layer(.mu.m)Interference X X .circle. .circleincircle. .circleincircle. .circleincircle. .DELTA. Xfringe______________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 8F______________________________________ High frequency Layer Starting Flow rate power thicknessLayer gas (SCCM) (W) (.mu.)______________________________________First layer H.sub.2 300 170 2.8 SiH.sub.4 50 GeH.sub.4 100 CH.sub.4 15Second layer H.sub.2 300 200 21 SiH.sub.4 300 CH.sub.4 15______________________________________
TABLE 9F______________________________________ No. 901F 902F 903F 904F 905F 906F 907F 908F______________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in 0.07 0.09 0.16 0.19 0.46 0.35 0.1 3.2layer thick-ness offirst layer(.mu.m)Interference X X .circle. .circle. .circleincircle. .circleincircle. .DELTA. Xfringe______________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 10F______________________________________ High frequency Layer Flow rate power thicknessLayer Starting gas (SCCM) (W) (.mu.)______________________________________First H.sub.2 300 170 5.1layer SiH.sub.4 100 GeH.sub.4 60 CH.sub.4 16Second H.sub.2 300 230 22layer SiH.sub.4 300______________________________________
TABLE 11F__________________________________________________________________________ No. 1101F 1102F 1103F 1104F 1105F 1106F 1107F 1108F__________________________________________________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in layer 0.05 0.06 0.1 0.22 0.31 0.21 0.1 2.7thickness of firstlayer (.mu.m)Difference in layer 0.07 0.08 0.11 0.35 0.45 0.31 0.1 3.5thickness of secondlayer (.mu.m)Interference X X .circle. .circleincircle. .circleincircle. .circleincircle. .DELTA. Xfringe__________________________________________________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 12F__________________________________________________________________________ No. 1201F 1202F 1203F 1204F 1205F 1206F 1207F 1208F__________________________________________________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in 0.06 0.08 0.16 0.18 0.41 0.31 0.11 3.2layer thickness(.mu.m)Interference fringe X X .circle. .circle. .circleincircle. .circleincircle. .DELTA. Xand electrophoto-graphiccharacteristics__________________________________________________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 13F__________________________________________________________________________No. 1301F 1302F 1303F 1304F 1305F 1306F 1307F 1308F__________________________________________________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in layer 0.05 0.041 0.1 0.19 0.31 0.22 0.1 2.6thickness of firstlayer (.mu.m)Difference in layer 0.06 0.07 0.11 0.22 0.41 0.32 0.1 2.6thickness of secondlayer (.mu.m)Interference fringe X X .circle. .circleincircle. .circleincircle. .circleincircle. .DELTA. Xand electrophoto-graphiccharacteristics__________________________________________________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 14F______________________________________ High Layer Flow rate frequency thicknessLayer Starting gas (SCCM) power (W) (.mu.)______________________________________First H.sub.2 300 160 3layer SiH.sub.4 50 GeH.sub.4 100 NH.sub.3 30.about.0Second H.sub.2 300 300 20layer SiH.sub.4 300______________________________________
TABLE 15F__________________________________________________________________________ No. 1501F 1502F 1503F 1504F 1505F 1506F 1507F 1508F__________________________________________________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in 0.07 0.08 0.17 0.20 0.42 0.33 0.11 2.8layer thickness(.mu.m)Interference fringe X X .circle. .circleincircle. .circleincircle. .circleincircle. .DELTA. Xand electrophoto-graphiccharacteristics__________________________________________________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 16F______________________________________ High Layer Flow rate frequency thicknessLayer Starting gas (SCCM) power (W) (.mu.)______________________________________First H.sub.2 300 160 5layer SiH.sub.4 100 GeH.sub.4 50 NH.sub.3 15.about.0Second H.sub.2 300 200 20layer SiH.sub.4 300 NH.sub.3______________________________________
TABLE 17F__________________________________________________________________________ No. 1701F 1702F 1703F 1704F 1705F 1706F 1707F 1708F__________________________________________________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in layer 0.05 0.07 0.1 0.21 0.31 0.22 0.1 2.6thickness of firstlayer (.mu.m)Difference in layer 0.06 0.08 0.1 0.2 0.41 0.35 0.1 3.5thickness of secondlayer (.mu.m)Interference fringe X X .circle. .circleincircle. .circleincircle. .circleincircle. .DELTA. Xand electrophotographiccharacteristics__________________________________________________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 18F______________________________________ High Layer Flow rate frequency thicknessLayer Starting gas (SCCM) power (W) (.mu.)______________________________________First H.sub.2 300 170 2.8layer SiH.sub.4 100 GeH.sub.4 50 CH.sub.4 15.about.0Second H.sub.2 300 200 21layer SiH.sub.4 300______________________________________
TABLE 19F__________________________________________________________________________ No. 1901F 1902F 1903F 1904F 1905F 1906F 1907F 1908F__________________________________________________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in layer 0.07 0.09 0.16 0.19 0.46 0.35 0.1 3.2thickness(.mu.m)Interference fringe X X .circle. .circle. .circleincircle. .circleincircle. .DELTA. Xand electrophoto-graphiccharacteristics__________________________________________________________________________ X Practically unusable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 20F______________________________________ High Layer Flow rate frequency thicknessLayer Starting Gas (SCCM) power (W) (.mu.)______________________________________First H.sub.2 300 170 5.1layer SiH.sub.4 100 GeH.sub.4 60 CH.sub.4 16.about.0Second H.sub.2 300 230 22layer SiH.sub.4 300 CH.sub.4______________________________________
TABLE 21F__________________________________________________________________________ No. 2101F 2102F 2103F 2104F 2105F 2106F 2107F 2108F__________________________________________________________________________Cylinder No. 101 102 103 104 105 106 107 108Difference in layer 0.05 0.06 0.1 0.22 0.31 0.21 0.1 2.7thickness of firstlayer (.mu.m)Difference in layer 0.07 0.08 0.11 0.35 0.45 0.31 0.1 3.5thickness of secondlayer (.mu.m)Interference fringe X X .circle. .circleincircle. .circleincircle. .circleincircle. .DELTA. Xand electrophoto-graphiccharacteristics__________________________________________________________________________ X Practically unusuable .DELTA. Practically satisfactory .circle. Practically very good .circleincircle. Practically excellent
TABLE 22F__________________________________________________________________________(Sample No. 2201F) Dis- LayerLayer charging formation Layerconsti- Gases Flow rate power rate thicknesstution employed (SCCM) Flow rate ratio (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First SiH.sub.4 /He = 0.05 SiH.sub.4 + GeH.sub.4 = 50 NO/(SiH.sub.4 + GeH.sub.4) = 3/10.about.0 150 12 1layer GeH.sub.4 /He = 0.05 NOSecond SiH.sub.4 /He = 0.05 SiH.sub.4 = 50 150 12 20layer__________________________________________________________________________
TABLE 23F__________________________________________________________________________(Sample No. 2203F) Dis- LayerLayer charging formation Layerconsti- Gases Flow rate power rate thicknesstution employed (SCCM) Flow rate ratio (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First SiH.sub.4 /He = 0.05 SiH.sub.4 + GeH.sub.4 = 50 NO/(SiH.sub.4 + GeH.sub.4) = 2/10.about.0 150 12 0.5layer GeH.sub.4 /He = 0.05 NOSecond SiH.sub.4 /He = 0.05 SiH.sub.4 = 50 150 12 20layer__________________________________________________________________________
TABLE 24F__________________________________________________________________________(Sample No. 2203F) Dis- LayerLayer charging formation Layerconsti- Gases Flow rate power rate thicknesstution employed (SCCM) Flow rate ratio (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First SiH.sub.4 /He = 0.05 SiH.sub.4 + GeH.sub.4 = 50 NO/(SiH.sub.4 + GeH.sub.4) = 1/10.about.1/100 160 14 5layer GeH.sub.4 /He = 0.05 NOSecond SiH.sub.4 /He = 0.05 SiH.sub.4 = 50 NO/SiH.sub.4 = 1/100 160 14 15layer__________________________________________________________________________
TABLE 25F__________________________________________________________________________(Sample No. 2204F) Dis- LayerLayer charging formation Layerconsti- Gases Flow rate power rate thicknesstution employed (SCCM) Flow rate ratio (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First SiH.sub.4 /He = 0.05 SiH.sub.4 + GeH.sub.4 = 50 NO/(SiH.sub.4 + GeH.sub.4) = 3/10.about.0 160 14 1.0layer GeH.sub.4 /He = 0.05 NOSecond SiH.sub.4 /He = 0.05 SiH.sub.4 = 50 160 12 15layer__________________________________________________________________________
TABLE 26F__________________________________________________________________________(Sample No. 2205F) Dis- LayerLayer charging formation Layerconsti- Gases Flow rate power rate thicknesstution employed (SCCM) Flow rate ratio (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First SiH.sub.4 /He = 0.05 SiH.sub.4 + GeH.sub.4 = 50 NO/(SiH.sub.4 + GeH.sub.4) = 3/10.about.0 170 15 1layer GeH.sub.4 /He = 0.05 NOSecond SiH.sub.4 /He = 0.05 SiH.sub.4 = 50 170 15 20layer__________________________________________________________________________
TABLE 27F__________________________________________________________________________(Sample No. 2206F) Dis- LayerLayer charging formation Layerconsti- Gases Flow rate power rate thicknesstution employed (SCCM) Flow rate ratio (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First SiH.sub.4 /He = 0.05 SiH.sub.4 + GeH.sub.4 = 50 NH.sub.3 /(SiH.sub.4 + GeH.sub.4) = 1/10.about.1/100 160 14 5layer GeH.sub.4 /He = 0.05 NH.sub.3Second SiH.sub.4 /He = 0.05 SiH.sub.4 = 50 NH.sub.3 /SiH.sub.4 = 1/100 160 14 15layer__________________________________________________________________________
TABLE 28F__________________________________________________________________________(Sample No. 2207F) Dis- LayerLayer charging formation Layerconsti- Gases Flow rate power rate thicknesstution employed (SCCM) Flow rate ratio (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First SiH.sub.4 /He = 0.05 SiH.sub.4 + GeH.sub.4 = 50 CH.sub.4 /(SiH.sub.4 + GeH.sub.4) = 1/10.about.1/100 160 14 5layer GeH.sub.4 /He = 0.05 CH.sub.4Second SiH.sub.4 /He = 0.05 SiH.sub.4 = 50 CH.sub.4 /SiH.sub.4 = 1/100 160 14 15layer CH.sub.4__________________________________________________________________________
TABLE 1G______________________________________ Dis- Depo- Layer charging sition thick-Starting Gas flow rate power rate nessgas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 B.sub.2 H.sub.6 /H.sub.2 150 .fwdarw. 0 (= 3000 vol ppm)Sec- H.sub.2 300 300 24 20ond SiH.sub.4 300layer______________________________________
TABLE 2G______________________________________ Sample No. 201G 202G 203G 204G______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.51 0.44 0.41 0.61 layer thickness of minute portion (.mu.m)______________________________________
TABLE 3G______________________________________ Sample No. 301G 302G 303G 304G______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.45 0.42 0.39 0.50 layer thickness of minute portion (.mu.m)______________________________________
TABLE 4G______________________________________ Dis- Depo- Layer charging sition thick-Starting Gas flow rate power rate nessgas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 B.sub.2 H.sub.6 /H.sub.2 50 .fwdarw. 0 (= 3000 vol ppm)Sec- H.sub.2 300 300 24 20ond SiH.sub.4 300layer______________________________________
TABLE 5G______________________________________ Sample No. 501G 502G 503G 504G______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.42 0.40 0.38 0.48 layer thickness of minute portion (.mu.m)______________________________________
TABLE 6G______________________________________ Sample No. 601G 602G 603G 604G______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.40 0.38 0.36 0.45 layer thickness of minute portion (.mu.m)______________________________________
TABLE 7G__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 0Second Layer H.sub.2 300 100 10 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 8G__________________________________________________________________________ Sample No. 801G 802G 803G 804G__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.13 0.11 0.1 0.2 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.13 0.12 0.11 0.2 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.5 0.4 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 9G__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 60 (= 3000 vol ppm)Second Layer H.sub.2 300 100 10 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 60 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 10G__________________________________________________________________________ Sample No. 1001G 1002G 1003G 1004G__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.14 0.12 0.1 0.16 of minute portion in first layer (.mu.m)Second Average difference in layer 0.3 0.3 0.3 0.3layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.14 0.13 0.21 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.57 0.4 0.3 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 11G__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 .fwdarw. 25 SiH.sub.4 50 .fwdarw. 75 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 100 10 2 B GeH.sub.4 25 .fwdarw. 0 SiH.sub.4 75 .fwdarw. 100Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 12G__________________________________________________________________________ Sample No. 1201G 1202G 1203G 1204G__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.1 0.1 0.1 0.12 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.22 0.22 0.22 0.22 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.11 0.1 0.1 0.13 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.55 0.4 0.39 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 1H______________________________________ Dis- Depo- Layer charging sition thick-Starting Gas flow rate power rate nessgas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 100 9 3 GeH.sub.4 + SiH.sub.4 = 100 NO 10Sec- H.sub.2 300 300 24 20ond SiH.sub.4 300layer______________________________________
TABLE 2H______________________________________ Sample No. 201H 202H 203H 204H______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.51 0.44 0.41 0.61 layer thickness of minute portion (.mu.m)______________________________________
TABLE 3H______________________________________ Dis- Depo- Layer charging sition thick-Starting Gas flow rate power rate nessgas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 CH.sub.4 10Sec- H.sub.2 300 300 24 20ond SiH.sub.4 300layer______________________________________
TABLE 4H______________________________________ Sample No. 401H 402H 403H 404H______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.45 0.42 0.39 0.50 layer thickness of minute portion (.mu.m)______________________________________
TABLE 5H______________________________________ Dis- Depo- Layer charging sition thick-Starting Gas flow rate power rate nessgas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 NH.sub.3 10Sec- H.sub.2 300 300 24 20ond SiH.sub.4 300layer______________________________________
TABLE 6H______________________________________ Sample No. 601H 602H 603H 604H______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.42 0.40 0.38 0.48 layer thickness of minute portion (.mu.m)______________________________________
TABLE 7H______________________________________ Dis- Depo- Layer charging sition thick-Starting Gas flow rate power rate nessgas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 NH.sub.3 6Sec- H.sub.2 300 300 24 20ond SiH.sub.4 300layer NH.sub.3 6______________________________________
TABLE 8H______________________________________ Sample No. 801H 802H 803H 804H______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.40 0.38 0.36 0.45 layer thickness of minute portion (.mu.m)______________________________________
TABLE 9H______________________________________ Dis- Depo- Layer charging sition thick-Starting Gas flow rate power rate nessgas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 NO 20 .fwdarw. 0Sec- H.sub.2 300 300 24 20ond SiH.sub.4 300layer______________________________________
TABLE 10H__________________________________________________________________________ Gas Discharging Deposition Layer flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 NH.sub.3 20 .fwdarw. 0Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 11H__________________________________________________________________________ Gas Discharging Deposition Layer flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 NO 10 .fwdarw. *Second H.sub.2 300 300 24 20layer SiH.sub.4 300 NO * .fwdarw. 0__________________________________________________________________________ Note: The symbol * represents continuity of change in the gas flow rate. The same note applies to the subsequent other tables.
TABLE 12H__________________________________________________________________________ Gas Discharging Deposition Layer flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 CH.sub.4 10 .fwdarw. 0Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 1I______________________________________ Dis- Depo- LayerLayer charging sition thick-consti- Starting Gas flow rate power rate nesstution gas (SCCM) (W) (.ANG./sec) (.mu.)______________________________________First H.sub.2 300 100 10 3layer SiH.sub.4 200 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NO 10Second H.sub.2 300 300 24 20layer SiH.sub.4 300______________________________________
TABLE 2I______________________________________ No. 201I 202I 203I 204I______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThick- Average difference in layer 1 1 1 1ness thickness between center andof light both ends of first layerreceiving (.mu.m)layer Difference in layer 0.2 0.15 0.1 0.25 thickness of minute portion in first layer (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion in second layer (.mu.m)______________________________________
TABLE 3I__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 1 SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NH.sub.3 11Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 4I__________________________________________________________________________ No. 401I 402I 403I 404I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.1 0.1 0.1 0.1of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.04 0.03 0.02 0.05 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 5I__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 1 SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 50 (= 3000 vol ppm) CH.sub.4 10Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 6I__________________________________________________________________________ No. 601I 602I 603I 604I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.12 0.12 0.12 0.12of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.4 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 7I__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 1 SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 150 (= 3000 vol ppm) NO 10Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NO 10 Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NO 10__________________________________________________________________________
TABLE 8I__________________________________________________________________________ No. 801I 802I 803I 804I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.1 0.1 0.1 0.1of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m)Second Average difference in layer 1.6 1.6 1.6 1.6layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.13 0.11 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.1 3.1 3.1 3.1 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.4 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 9I__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer Starting rate power rate thicknessconstitution gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 1 SiH.sub.4 100 GeH.sub.4 100 NH.sub.3 12Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NH.sub.3 12 Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NH.sub.3 12__________________________________________________________________________
TABLE 10I__________________________________________________________________________ No. 1001I 1002I 1003I 1004I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.12 0.12 0.12 0.12of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.39 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 11I__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) CH.sub.4 8 Layer H.sub.2 300 100 10 2 B SiH.sub.4 100 GeH.sub.4 100 CH.sub.4 8Second layer H.sub.2 300 300 24 20 SiH.sub.4 300 CH.sub.4 8__________________________________________________________________________
TABLE 12I__________________________________________________________________________ No. 1201I 1202I 1203I 1204I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.1 0.1 0.1 0.12 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.22 0.22 0.22 0.22 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.11 0.1 0.1 0.13 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.55 0.4 0.39 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 13I__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A SiH.sub.4 100 GeH.sub.4 100 CH.sub.4 10.about.* Layer H.sub.2 300 100 10 2 B SiH.sub.4 100 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) CH.sub.4 *.about.0Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 14I__________________________________________________________________________ No. 1401I 1402I 1403I 1404I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.1 0.1 0.1 0.12 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.22 0.22 0.22 0.22 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.11 0.1 0.1 0.13 thickness of minute portion in layer B (.mu.m)Average difference on layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.55 0.4 0.39 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 15I__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 10 5layer GeH.sub.4 50 SiH.sub.4 50 B.sub.6 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NO 10.about.0Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 16I__________________________________________________________________________ No. 1601I 1602I 1603I 1604I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 1.5 1.5 1.5 1.5of light thickness between center andreceiving both ends of first layerlayer (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in first layer (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion in second layer (.mu.m)__________________________________________________________________________
TABLE 17I__________________________________________________________________________ Gas Discharging Deposition Layer flow rate power rate thicknessLayer constitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NH.sub.3 10.about.0Second Layer H.sub.2 300 100 8 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 18I__________________________________________________________________________ No. 1801I 1802I 1803I 1804I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.14 0.12 0.1 0.16 of minute portion in first layer (.mu.m)Second Average difference in layer 0.3 0.3 0.3 0.3layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.14 0.13 0.21 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.57 0.4 0.3 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 19I__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 50 (= 3000 vol ppm) CH.sub.4 10.about.*Second Layer H.sub.2 300 100 8 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) CH.sub.4 *.about.** Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 CH.sub.4 **.about.0__________________________________________________________________________ Note: The symbols * and ** represent continuity of change in the gas flow rate respectively. The same note applies to the subsequent other tables.
TABLE 20I__________________________________________________________________________ No. 2001I 2002I 2003I 2004I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.13 0.11 0.1 0.2 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.13 0.12 0.11 0.2 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.5 0.4 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 21I__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 150 (= 3000 vol ppm) NO 10.about.*Second Layer H.sub.2 300 100 8 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NO *.about.** Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NO **.about.0__________________________________________________________________________
TABLE 22I__________________________________________________________________________ No. 2201I 2202I 2203I 2204I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.12 0.11 0.1 0.14 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 23I__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 NH.sub.3 10.about.*Second Layer H.sub.2 300 100 8 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NH.sub.3 *.about.** Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NH.sub.3 **.about.0__________________________________________________________________________
TABLE 24I__________________________________________________________________________ No. 2401I 2402I 2403I 2404I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.12 0.11 0.1 0.14 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 25I__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NO 8 Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 SiH.sub.4 50Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 26I__________________________________________________________________________ No. 2601I 2602I 2603I 2604I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.13 0.11 0.1 0.15 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.2 0.2 0.2 0.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.5 0.44 0.4 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 27I__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 NH.sub.3 11 Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm)Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 28I__________________________________________________________________________ No. 2801I 2802I 2803I 2804I__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.11 0.11 0.1 0.13 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.21 0.21 0.21 0.21 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.4 0.35 0.3 0.5of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 1J__________________________________________________________________________ Discharging Deposition Layer Gas flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 GeH.sub.4 + SiH.sub.4 = 100 (= 3000 vol ppm) NO 12Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 2J______________________________________ Sample No. 201J 202J 203J 204J______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThick- Average difference in layer 1 1 1 1ness thickness between center andof light both ends of first layerreceiving (.mu.m)layer Difference in layer 0.2 0.15 0.1 0.25 thickness of minute portion in first layer (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.51 0.44 0.41 0.61 thickness of minute portion in second layer (.mu.m)______________________________________
TABLE 3J______________________________________ Sample No. 301J 302J 303J 304J______________________________________Surface Pitch (.mu.m) 55 45 20 15structure Depth (.mu.m) 2.41 1.89 0.65 0.89of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThick- Average difference in layer 1 1 1 1ness thickness between center andof light both ends of first layerreceiving (.mu.m)layer Difference in layer 0.19 0.14 0.1 0.25 thickness of minute portion in first layer (.mu.m) Average difference in layer 3.1 3.1 3.1 3.1 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.45 0.42 0.39 0.50 thickness of minute portion in second layer (.mu.m)______________________________________
TABLE 4J__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 3 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) GeH.sub.4 + SiH.sub.4 = 100 NH.sub.3 8Second Layer H.sub.2 300 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NH.sub.3 8 Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NH.sub.3 8__________________________________________________________________________
TABLE 5J__________________________________________________________________________ Sample No. 601J 602J 603J 604J__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.1 0.1 0.1 0.1of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.04 0.03 0.02 0.05 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 6J__________________________________________________________________________ Sample No. 701J 702J 703J 704J__________________________________________________________________________Surface Pitch (.mu.m) 55 45 20 15structure Depth (.mu.m) 2.41 1.89 0.65 0.89of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.1 0.1 0.1 0.1of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.04 0.03 0.02 0.05 of minute portion in first layer (.mu.m)Second Average difference in layer 1.49 1.49 1.49 1.49layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 2.9 2.9 2.9 2.9 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.51 0.44 0.41 0.61 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 7J__________________________________________________________________________ Discharging Deposition Layer Gas flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 10 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) GeH.sub.4 + SiH.sub.4 = 100 CH.sub.4 10 .fwdarw. 0Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 8J__________________________________________________________________________ Sample No. 1001J 1002J 1003J 1004J__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 1 1 1 1of light thickness between center andreceiving both ends of first layerlayer (.mu.m) Difference in layer 0.2 0.15 0.1 0.25 thickness of minute portion in first layer (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of second layer (.mu.m) Difference in layer 0.55 0.4 0.3 0.6 thickness of minute portion in second layer (.mu.m)__________________________________________________________________________
TABLE 9J__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 3 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 50 (= 3000 vol ppm) GeH.sub.4 + SiH.sub.4 = 100 NO 10 .fwdarw. *Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NO * .fwdarw. ** Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NO ** .fwdarw. 0__________________________________________________________________________
TABLE 10J__________________________________________________________________________ Sample No. 1301J 1302J 1303J 1304J__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.12 0.12 0.12 0.12of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.4 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 11J__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 3 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 NH.sub.3 10 .fwdarw. *Second Layer H.sub.2 300 100 8 5layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NH.sub.3 * .fwdarw. ** Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NH.sub.3 ** .fwdarw. 0__________________________________________________________________________
TABLE 12J__________________________________________________________________________ Sample No. 1401J 1402J 1403J 1404J__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.12 0.12 0.12 0.12of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.05 0.04 0.03 0.06 of minute portion in first layer (.mu.m)Second Average difference in layer 1.5 1.5 1.5 1.5layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.12 0.1 0.3 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.55 0.4 0.39 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 13J__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 1.5layer A GeH.sub.4 100 .fwdarw. 50 SiH.sub.4 0 .fwdarw. 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) CH.sub.4 10 .fwdarw. * Layer H.sub.2 300 100 10 1.5 B GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 CH.sub.4 * .fwdarw. **Second layer H.sub.2 300 300 24 20 SiH.sub.4 300 CH.sub.4 ** .fwdarw. 0__________________________________________________________________________
TABLE 14J__________________________________________________________________________ Sample No. 1501J 1502J 1503J 1504J__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.1 0.1 0.1 0.12 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.22 0.22 0.22 0.22 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.11 0.1 0.1 0.13 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.55 0.4 0.39 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 2K__________________________________________________________________________ Discharging Deposition Layer Gas flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 10 1layer GeH.sub.4 100 SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 B.sub.2 H.sub.6 / (= 3000 vol ppm) (GeH.sub.4 + SiH.sub.4) = 3/100 .fwdarw. 0 NO 12Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 3K__________________________________________________________________________ Discharging Deposition Layer Gas flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 14 3layer SiH.sub.4 50 GeH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 B.sub.2 H.sub.6 / (= 3000 vol ppm) (GeH.sub.4 + SiH.sub.4) = 5/100 .fwdarw. 0 NH.sub.3 10Second H.sub.2 300 300 24 20layer SiH.sub.4 300 NH.sub.3 10__________________________________________________________________________
TABLE 4K__________________________________________________________________________ Discharging Deposition Layer Gas flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 12 5layer SiH.sub.4 100 GeH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 B.sub.2 H.sub.6 / (= 3000 vol ppm) GeH.sub.4 + SiH.sub.4) = 1/100 .fwdarw. 0 CH.sub.4 15Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 5K__________________________________________________________________________ Discharging Deposition Layer Gas flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 8 7layer SiH.sub.4 135 GeH.sub.4 15 B.sub.2 H.sub.6 /H.sub.2 B.sub.2 H.sub.6 / (= 3000 vol ppm) (GeH.sub.4 + SiH.sub.4) = 1/100 .fwdarw. 0 NO 15Second H.sub.2 300 300 24 20layer SiH.sub.4 300 NO 15__________________________________________________________________________
TABLE 6K__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 110 (= 3000 vol ppm) NH.sub.3 10 .fwdarw. 0Second Layer H.sub.2 300 100 10 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 110 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 7K__________________________________________________________________________ Sample No. 701K 702K 703K 704K__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.12 0.11 0.1 0.14 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 8K__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) CH.sub.4 10 .fwdarw. 0 Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 SiH.sub.4 50Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 9K__________________________________________________________________________ Sample No. 1001K 1002K 1003K 1004K__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.13 0.11 0.1 0.15 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.2 0.2 0.2 0.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.5 0.44 0.4 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 10K__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 NO 10 .fwdarw. * Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NO * .fwdarw. **Second layer H.sub.2 300 300 24 20 SiH.sub.4 300 NO ** .fwdarw. 0__________________________________________________________________________
TABLE 11K__________________________________________________________________________ No. 1301K 1302K 1303K 1304K__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.11 0.11 0.1 0.13 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.21 0.21 0.21 0.21 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.4 0.35 0.3 0.5of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 12K__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 110 (= 3000 vol ppm) NH.sub.3 10 .fwdarw. *Sec- Layer H.sub.2 300 100 8 3ond A GeH.sub.4 50layer SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NH.sub.3 * .fwdarw. ** Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NH.sub.3 ** .fwdarw. 0__________________________________________________________________________
TABLE 13K__________________________________________________________________________ No. 1601K 1602K 1603K 1604K__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.12 0.11 0.1 0.14 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 1L__________________________________________________________________________ Discharging Deposition Layer Gas flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 100 .fwdarw. 0 SiH.sub.4 0 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 B.sub.2 H.sub.6 /H.sub.2 150 .fwdarw. 0 (= 3000 vol ppm) NO 12Second H.sub.2 300 300 24 20layer SiH.sub.4 300__________________________________________________________________________
TABLE 2L______________________________________ Sample No. 101L 102L 103L 104L______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.51 0.44 0.41 0.61 layer thickness of minute portion (.mu.m)______________________________________
TABLE 3L______________________________________ Sample No. 201L 202L 203L 204L______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.45 0.42 0.39 0.50 layer thickness of minute portion (.mu.m)______________________________________
TABLE 4L__________________________________________________________________________ Discharging Deposition Layer Gas flow rate power rate thicknessStarting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First H.sub.2 300 100 9 3layer GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 GeH.sub.4 + SiH.sub.4 = 100 B.sub.2 H.sub.6 /H.sub.2 50 .fwdarw. 0 (= 3000 vol ppm) NH.sub.3 12Second H.sub.2 300 300 24 20layer SiH.sub.4 300 NH.sub.3 12__________________________________________________________________________
TABLE 5L______________________________________ Sample No. 301L 302L 303L 304L______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.42 0.40 0.38 0.48 layer thickness of minute portion (.mu.m)______________________________________
TABLE 6L______________________________________ Sample No. 401L 402L 403L 404L______________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference 3.2 3.2 3.2 3.2of light in layer thicknessreceiving between center andlayer both ends (.mu.m) Difference in 0.40 0.38 0.36 0.45 layer thickness of minute portion (.mu.m)______________________________________
TABLE 7L__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 CH.sub.4 15Second Layer H.sub.2 300 100 10 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 8L__________________________________________________________________________ Sample No. 501L 502L 503L 504L__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.13 0.11 0.1 0.2 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.13 0.12 0.11 0.2 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.5 0.4 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 9L__________________________________________________________________________ Gas flow Discharging Deposition LayerLayer rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 100 (= 3000 vol ppm) NO 10Second Layer H.sub.2 300 100 10 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 0 (= 3000 vol ppm) NO 10 Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NO 10__________________________________________________________________________
TABLE 10L__________________________________________________________________________ Sample No. 601L 602L 603L 604L__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.14 0.12 0.1 0.16 of minute portion in first layer (.mu.m)Second Average difference in layer 0.3 0.3 0.3 0.3layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.2 0.14 0.13 0.21 thickness of minute portion in layer A (.mu.m) Average difference in layer 3 3 3 3 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.57 0.4 0.3 0.6 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 11L__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 .fwdarw. 25 SiH.sub.4 50 .fwdarw. 75 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 0 (= 3000 vol ppm) NH.sub.3 10 Layer H.sub.2 300 100 10 2 B GeH.sub.4 25 .fwdarw. 0 SiH.sub.4 75 .fwdarw. 100 NH.sub.3 10Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 12L__________________________________________________________________________ Sample No. 701L 702L 703L 704L__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.1 0.1 0.1 0.12 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.22 0.22 0.22 0.22 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.11 0.1 0.1 0.13 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.55 0.4 0.39 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 13L__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 150 .fwdarw. 110 (= 3000 vol ppm) NH.sub.3 10 .fwdarw. 0Second Layer H.sub.2 300 100 10 3layer A SiH.sub.4 100 B.sub.2 H.sub.6 /H.sub.2 110 .fwdarw. 0 (= 3000 vol ppm) Layer H.sub.2 300 300 24 20 B SiH.sub.4 300__________________________________________________________________________
TABLE 14L__________________________________________________________________________ Sample No. 1401L 1402L 1403L 1404L__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.12 0.11 0.1 0.14 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________
TABLE 15L__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 .fwdarw. * SiH.sub.4 50 .fwdarw. ** B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 0 (= 3000 vol ppm) CH.sub.4 10 .fwdarw. 0 Layer H.sub.2 300 100 10 2 B GeH.sub.4 * .fwdarw. 0 SiH.sub.4 ** .fwdarw. 100Second layer H.sub.2 300 300 24 20 SiH.sub.4 300__________________________________________________________________________
TABLE 16L__________________________________________________________________________ Sample No. 1701L 1702L 1703L 1704L__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.13 0.11 0.1 0.15 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.2 0.2 0.2 0.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.5 0.44 0.4 0.6of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 17L__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First Layer H.sub.2 300 100 10 2layer A GeH.sub.4 50 SiH.sub.4 50 NO 10 .fwdarw. * Layer H.sub.2 300 100 10 2 B GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. 0 (= 3000 vol ppm) NO * .fwdarw. **Second layer H.sub.2 300 300 24 20 SiH.sub.4 300 NO ** .fwdarw. 0__________________________________________________________________________
TABLE 18L__________________________________________________________________________ No. 2001L 2002L 2003L 2004L__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness First Average difference in layer 0.2 0.2 0.2 0.2of light layer thickness between center andreceiving both ends of layer A (.mu.m)layer Difference in layer 0.11 0.11 0.1 0.13 thickness of minute portion in layer A (.mu.m) Average difference in layer 0.21 0.21 0.21 0.21 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.13 0.12 0.11 0.14 thickness of minute portion in layer B (.mu.m)Average difference in layer 3 3 3 3thickness between center and bothends of second layer (.mu.m)Difference in layer thickness 0.4 0.35 0.3 0.5of minute portion in second layer(.mu.m)__________________________________________________________________________
TABLE 19L__________________________________________________________________________ Gas Discharging Deposition LayerLayer flow rate power rate thicknessconstitution Starting gas (SCCM) (W) (.ANG./Sec) (.mu.)__________________________________________________________________________First layer H.sub.2 300 100 10 2 GeH.sub.4 50 SiH.sub.4 50 B.sub.2 H.sub.6 /H.sub.2 100 .fwdarw. (a) (= 3000 vol ppm) NH.sub.3 10 .fwdarw. *Second Layer H.sub.2 300 100 8 3layer A GeH.sub.4 50 .fwdarw. 0 SiH.sub.4 50 .fwdarw. 100 B.sub.2 H.sub.6 /H.sub.2 (a) .fwdarw. 0 (= 3000 vol ppm) NH.sub.3 * .fwdarw. ** Layer H.sub.2 300 300 24 20 B SiH.sub.4 300 NH.sub.3 ** .fwdarw. 0__________________________________________________________________________
TABLE 20L__________________________________________________________________________ No. 2301L 2302L 2303L 2304L__________________________________________________________________________Surface Pitch (.mu.m) 50 40 25 10structure Depth (.mu.m) 2.1 1.7 0.8 0.6of Al Angle (degree) 5.0 4.8 3.7 6.8substrateThickness Average difference in layer 0.2 0.2 0.2 0.2of light thickness between center and bothreceiving ends of first layer (.mu.m)layer Difference in layer thickness 0.12 0.11 0.1 0.14 of minute portion in first layer (.mu.m)Second Average difference in layer 0.4 0.4 0.4 0.4layer thickness between center and both ends of layer A (.mu.m) Difference in layer 0.17 0.15 0.13 0.18 thickness of minute portion in layer A (.mu.m) Average difference in layer 3.2 3.2 3.2 3.2 thickness between center and both ends of layer B (.mu.m) Difference in layer 0.6 0.55 0.5 0.7 thickness of minute portion in layer B (.mu.m)__________________________________________________________________________

Number	Date	Country
59-46859	Mar 1984	JPX
59-48579	Mar 1984	JPX
59-51400	Mar 1984	JPX
59-58005	Mar 1984	JPX
59-61338	Mar 1984	JPX
59-61339	Mar 1984	JPX
59-61969	Mar 1984	JPX
59-61970	Mar 1984	JPX
59-64970	Mar 1984	JPX
59-66586	Apr 1984	JPX
59-66136	Apr 1984	JPX
59-182280	Aug 1984	JPX

Number	Name	Date
4359514	Shimizu et al.	Nov 1982
4492745	Mimura et al.	Jan 1985
4514483	Matsuura et al.	Apr 1985
4517269	Shimizu et al.	May 1985

Number	Date	Country
2733187	Jan 1978	DEX
56150754	Nov 1981	JPX

Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate

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