Number | Date | Country | Kind |
---|---|---|---|
00830060 | Jan 2000 | EP |
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/EP00/08529 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO01/56087 | 8/2/2001 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
4958321 | Chang | Sep 1990 | A |
5488243 | Tsuruta et al. | Jan 1996 | A |
5830575 | Warren et al. | Nov 1998 | A |
Number | Date | Country |
---|---|---|
505790 | Sep 1992 | EP |
2772989 | Jun 1999 | FR |
Entry |
---|
D.J. DiMaria et al., “Electronically-alterable read-only-memory using Si-rich SiO2 injectors and a floating polycrystalline silicon storage layer,” Journal of Applied Physics, 7(52):4825-4842, Jul. 1, 1981. |
Abstract of FR 2772989, Jun. 25, 1999, esp@cenet database. |