charging by injection of carriers through a conductive insulator

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H01L29/7882

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7882charging by injection of carriers through a conductive insulator

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Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile memory device
- Patent number 10,256,288
- Issue date Apr 9, 2019
- National Institute of Advanced Industrial Science and Technology
- Noriyuki Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for a split gate memory cell structure
- Patent number 10,153,349
- Issue date Dec 11, 2018
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory for high rewrite cycles application
- Patent number 9,666,279
- Issue date May 30, 2017
- eMemory Technology Inc.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Grant
Single-poly nonvolatile memory cell
- Patent number 9,640,259
- Issue date May 2, 2017
- eMemory Technology Inc.
- Yi-Hung Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory for high rewrite cycles application
- Patent number 9,633,729
- Issue date Apr 25, 2017
- eMemory Technology Inc.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 9,117,847
- Issue date Aug 25, 2015
- United Microelectronics Corp.
- Cheng-Yuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,890,230
- Issue date Nov 18, 2014
- United Microelectronics Corp.
- Cheng-Yuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing low voltage flash memory
- Patent number 6,927,128
- Issue date Aug 9, 2005
- DongbuAnam Semiconductor Inc.
- Jung-Wook Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a dielectric layer for a silicon-oxide-nitr...
- Patent number 6,818,558
- Issue date Nov 16, 2004
- Cypress Semiconductor Corporation
- Manuj Rathor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure integrated on semiconductor
- Patent number 6,772,992
- Issue date Aug 10, 2004
- STMicroelectronics S.r.l.
- Salvatore Lombardo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having silicon-rich layer and method of manufa...
- Patent number 6,709,928
- Issue date Mar 23, 2004
- Cypress Semiconductor Corporation
- Fred Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-rich tunnel oxide formed by oxygen implantation for flash E...
- Patent number 5,726,070
- Issue date Mar 10, 1998
- United Microelectronics Corporation
- Gary Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a polysilicon electrode in a trench
- Patent number 5,656,544
- Issue date Aug 12, 1997
- International Business Machines Corporation
- Albert Stephan Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional direct-write EEPROM arrays and fabrication methods
- Patent number 5,617,351
- Issue date Apr 1, 1997
- International Business Machines Corporation
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for flash memory cell
- Patent number 5,481,128
- Issue date Jan 2, 1996
- United Microelectronics Corporation
- Gary Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating three-dimensional direct-write EEPROM arrays
- Patent number 5,468,663
- Issue date Nov 21, 1995
- International Business Machines Corporation
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional direct-write EEPROM arrays and fabrication methods
- Patent number 5,467,305
- Issue date Nov 14, 1995
- International Business Machines Corporation
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making shadow RAM cell having a shallow trench EEPROM
- Patent number 5,399,516
- Issue date Mar 21, 1995
- International Business Machines Corporation
- Albert S. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a non-volatil...
- Patent number 5,371,027
- Issue date Dec 6, 1994
- U.S. Philips Corporation
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a flash memory cell
- Patent number 5,298,447
- Issue date Mar 29, 1994
- United Microelectronics Corporation
- Gary Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate EEPROM cell
- Patent number 5,208,772
- Issue date May 4, 1993
- International Business Machines Corporation
- Jeffrey P. Kasold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual electron injector structures using a conductive oxide between...
- Patent number 4,939,559
- Issue date Jul 3, 1990
- International Business Machines Corporation
- Donelli J. DiMaria
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile dynamic random access memory cell
- Patent number 4,729,115
- Issue date Mar 1, 1988
- International Business Machines Corporation
- Bruce A. Kauffmann
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge storage structure for nonvolatile memories
- Patent number 4,717,943
- Issue date Jan 5, 1988
- International Business Machines
- Hans P. Wolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially relaxable composite dielectric structure
- Patent number 4,688,078
- Issue date Aug 18, 1987
- Ning Hseih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct write nonvolatile memory cells
- Patent number 4,683,554
- Issue date Jul 28, 1987
- NCR Corporation
- George C. Lockwood
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile dynamic random access memory cell
- Patent number 4,665,417
- Issue date May 12, 1987
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Direct-write silicon nitride EEPROM cell
- Patent number 4,616,245
- Issue date Oct 7, 1986
- NCR Corporation
- James A. Topich
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile RAM device
- Patent number 4,471,471
- Issue date Sep 11, 1984
- International Business Machines Corporation
- Donelli J. DiMaria
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for fabricating semi-conductive oxide between two poly sili...
- Patent number 4,458,407
- Issue date Jul 10, 1984
- International Business Machines Corporation
- Anthony J. Hoeg
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20180308854
- Publication date Oct 25, 2018
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Noriyuki Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING ONE OR MORE NONVOLATILE MEMORY CE...
- Publication number 20180175209
- Publication date Jun 21, 2018
- GLOBALFOUNDRIES INC.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE
- Publication number 20170194444
- Publication date Jul 6, 2017
- NXP USA, Inc.
- CHEONG MIN HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory for high rewrite cycles application
- Publication number 20160307629
- Publication date Oct 20, 2016
- EMEMORY TECHNOLOGY INC.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20140015029
- Publication date Jan 16, 2014
- Cheng-Yuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF SILICON-RICH NITRIDE IN A FLASH MEMORY DEVICE
- Publication number 20090261406
- Publication date Oct 22, 2009
- Youseok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory devices having charge trap layers
- Publication number 20070187730
- Publication date Aug 16, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Sang-Jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory device with silicon rich silicon oxide layer and method of m...
- Publication number 20060180845
- Publication date Aug 17, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Young-Kwan Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low voltage flash memory and method for manufacturing same
- Publication number 20020033502
- Publication date Mar 21, 2002
- Anam Semiconductor, Inc.
- Jung-Wook Shin
- H01 - BASIC ELECTRIC ELEMENTS

charging by injection of carriers through a conductive insulator

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nonvolatile memory device

Methods and structures for a split gate memory cell structure

Non-volatile memory for high rewrite cycles application

Single-poly nonvolatile memory cell

Non-volatile memory for high rewrite cycles application

Method for fabricating semiconductor device

Semiconductor device

Method for manufacturing low voltage flash memory

Method of manufacturing a dielectric layer for a silicon-oxide-nitr...

Memory cell structure integrated on semiconductor

Semiconductor device having silicon-rich layer and method of manufa...

Silicon-rich tunnel oxide formed by oxygen implantation for flash E...

Process for forming a polysilicon electrode in a trench

Three-dimensional direct-write EEPROM arrays and fabrication methods

Structure for flash memory cell

Method of fabricating three-dimensional direct-write EEPROM arrays

Three-dimensional direct-write EEPROM arrays and fabrication methods

Method of making shadow RAM cell having a shallow trench EEPROM

Method of manufacturing a semiconductor device having a non-volatil...

Method of fabricating a flash memory cell

Gate EEPROM cell

Dual electron injector structures using a conductive oxide between...

Non-volatile dynamic random access memory cell

Charge storage structure for nonvolatile memories

Partially relaxable composite dielectric structure

Direct write nonvolatile memory cells

Non-volatile dynamic random access memory cell

Direct-write silicon nitride EEPROM cell

Non-volatile RAM device

Process for fabricating semi-conductive oxide between two poly sili...

Patents Applicationslast 30 patents

NONVOLATILE MEMORY DEVICE

SEMICONDUCTOR STRUCTURE INCLUDING ONE OR MORE NONVOLATILE MEMORY CE...

METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE

Non-volatile memory for high rewrite cycles application

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

USE OF SILICON-RICH NITRIDE IN A FLASH MEMORY DEVICE

Memory devices having charge trap layers

Memory device with silicon rich silicon oxide layer and method of m...

Low voltage flash memory and method for manufacturing same