Further details of the present invention are explained with the help of the attached drawings in which:
Probe storage devices enabling higher density data storage relative to current technology can include cantilevers with contact probe tips as components. Such probe storage devices typically use two parallel plates. A first plate (also referred to herein as a contact probe tip stage) includes cantilevers with contact probe tips extending therefrom for use as read-write heads and a second, complementary plate (also referred to herein as a media stage) includes a media device for storing data. At least one of the plates can be moved with respect to the other plate in a lateral X-Y plane while maintaining satisfactory control of the Z-spacing between the plates. Motion of the plates with respect to each other allows scanning of the media device by the contact probe tips and data transfer between the contact probe tips and the media device.
In some probe storage devices, for example utilizing phase change materials in a stack of the media device, both mechanical and electrical contact between the contact probe tips and the media device enables data transfer. In order to write data to the media device, current is passed through the contact probe tips and the phase change material to generate heat sufficient to cause a phase-change in some portion of the phase change material (said portion also referred to herein as a memory cell). Electrical resistance of the memory media can vary depending on the parameters of the write pulse, and therefore can represent data. Reading data from the memory media requires a circuit with an output sensitive to the resistance of the memory cell. An example of one such circuit is a resistive divider. Both mechanical and electrical contact between the contact probe tip and the media device can also enable data transfer where some other media device is used, for example memory media employing polarity-dependent memory.
Probe storage devices in accordance with the present invention can employ an array of contact probe tips to read data from, or write data to a media device. The media device can include a continuous recording media, or alternatively the media device can be patterned to define discrete memory cells having dimensions as small as approximately 40 nm or less. A contact probe tip can access a portion of the surface of the media device, the portion being referred to herein as a tip scan area. The tip scan area can vary significantly and can depend on contact tip probe layout and/or media device layout. For purposes of example, the tip scan area can approximate a 100 μm×100 μm (10,000 μm2) portion of the surface media device. To enable the contact probe tip to access substantially the full range of the tip scan area, the contact probe tip stage can move within the tip scan area and the media stage can be fixed in position. Alternatively, the contact probe tip stage can be fixed, and the media stage can move within the range of the tip scan area. The moving stage moves in both lateral (X) and transverse (Y) motion (also referred to herein as Cartesian plane motion) to traverse the tip scan area. Alternatively, both the contact probe tip stage and the media stage can move in a single direction, with one stage moving along the X-axis and the other stage moving along the Y-axis.
Referring to
A magnetic field is generated outside of the media stage from a permanent magnet that maps the cross configuration of the coils. As shown in
Four coils can be formed on the back surface of the media stage 340 (i.e. a surface of the media stage opposite of a surface contactable by contact probe tips), or otherwise disposed on the back surface of the media stage 340. The coils can comprise a conductive material such as copper formed to have multiple windings. The resistance of the coil can be minimized by increasing a height (relative to the width) of the coil and increasing the number of windings of the coil. However, increasing the coil height can result in increased bending forces applied to the media stage over the operating temperature range of the probe storage device. Therefore, the electrical characteristics of the coil should be balanced against the bending characteristics produced by the coil over an operating temperature range. In a preferred embodiment, the coils can have a height of a magnitude approximating ten microns.
Preferably the coils can comprise an equal number of windings having approximately the same trace cross-section and pitch, though in other embodiments the cross-section and pitch can vary, so long as a desired relative movement between the media stage and the contact probe tip stage can be achieved with a desired control. The gap between a surface of the media device of the media stage 340 and the contact probe tip stage 310 is hermetically sealed when the silicon cap 330 is bonded to the media frame 320 so that the media stage 340 is disposed between the silicon cap 330 and the contact tip probe stage 310. Preferably the media frame 320 and/or the bond ring can have an approximately uniform height so that a sufficient gap is formed between the media stage 340 and the contact probe tip stage 310 and further so that a sufficient gap is formed between the coils and the silicon cap 330. Further, a lubricant can be formed on one or both of the silicon cap 330 and the coils and/or media stage 340 so that a restrictive frictional force between the silicon cap 330 and the media stage 340 is sufficiently reduced. When the stage stack 300 is assembled, the permanent magnet 324 can generally be aligned with the coils 302 and the second steel plate 328. Although rigid structures of the stage stack 300 have been described as “steel” plates, such plates need not necessarily be formed from steel. In other embodiments, some other metal can be employed.
Referring again to
The suspension 350 can be built by patterning and etching the media stage 340 using a deep RIE etcher. In a preferred embodiment, the suspension 350 can include flexures having height to width aspect rations of 10:1. An example of a flexures can be one having a width of 13.8 um and thickness (corresponding to a thickness of the media stage) of 136 micron. Prior art flexures for use in electrostatic actuators and other movement devices typically include aspect rations of 40:1. A smaller aspect ratio can reduce the tolerance variation during manufacturing, reducing a variation in suspension stiffness and dynamic performance.
The suspension arrangement provides very high shock tolerance. Further, the mutually perpendicular flexures allow substantially isolated motion within the Cartesian plane while reducing cross-coupling. The rotational stiffness of the media stage 340 can be adjusted by changing the spacing between flexure pairs. Narrow flexure spacing produces a lower rotational stiffness while wide flexure spacing produces higher rotational stiffness. The suspension arrangement of
Combining the suspension arrangement and the magnetic actuator system disposed in non-coplanar space with the media device allows for high media utilization. For example, on a 10 mm by 10 mm stage, the effective media utilization is expected to be over 80%. Such a high rate of media utilization can allow for high capacity with a small package as compared to prior art probe storage devices as described above.
Referring to
It is to be understood that the above described suspension systems can be used with an actuation system that does not use coil and magnet and/or does not rely on the use of Lorentz force. For example, electrostatic actuation systems can be used. Further it is to be understood that alternative suspension systems to those described herein can be used with the coil and magnet and/or Lorentz force actuation system described herein.
It can be desirable to dedicate as large a portion of the media stage as possible to media utilization to increase an amount of capacity of a data storage device for a given footprint (i.e. to increase data storage density). To achieve increased media utilization it can be desired to reduce the percentage of the media stage area dedicated to a support structure and/or suspension arrangement. If a suspension arrangement of the moving stage suspension requires significant area, the total storage capacity of the device will be correspondingly limited. A media stage that is movable is susceptible to damage from dynamic events such as shock and vibration. Embodiments of suspension arrangements and media stages in accordance with the present invention can increase media utilization while improving shock response.
The flatness of a moving stage can vary over a range of operating temperature. For example, if coils comprising copper are disposed on the back side of a media stage comprising silicon, the differential thermal expansion between the silicon stage and the copper coils can cause the stage to bend out of plane, potentially beyond a required flatness tolerance (e.g. 1 μm). To reduce the out of plane bending, a silicon on insulator (SOI) structure is employed having a thermally grown oxide layer buried within a stack forming part of a media stage. The coils are formed over a thin, low temperature chemical vapor deposition (CVD) oxide layer. Subsequently, the wafer is thinned until the thermal oxide layer is exposed. The thermally grown oxide deposited at an elevated temperature will tend to cause the media stage to bend in a first direction such that the surface of the media stage has concave shape. However, since the copper coils are deposited at room temperature on the opposite side of the stack the differential bending caused by the coils causes the media stage to bend in a second, opposite direction. The net result is that the flatness of the media stage remains within tolerances over a desired temperature range.
The foregoing description of the present invention have been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise forms disclosed. Many modifications and variations will be apparent to practitioners skilled in this art. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the following claims and their equivalents.
This application claims priority to the following U.S. Provisional Application: U.S. Provisional Patent Application No. 60/813,975 entitled MEMORY STAGE FOR A PROBE STORAGE DEVICE, by Peter David Ascanio et al., filed Jun. 15, 2006, Attorney Docket No. NANO-1043US0. This application incorporates by reference all of the following co-pending applications and the following issued patents: U.S. Patent Application No. 60/813,817 entitled “Bonded Chip Assembly with a Micro-Mover for Microelectromechanical Systems,” by Nickolai Belov, filed Jun. 15, 2006, Attorney Docket No. NANO-01041US0; U.S. patent application Ser. No. 11/177,550, entitled “Media for Writing Highly Resolved Domains,” by Yevgeny Vasilievich Anoikin, filed Jul. 8, 2005, Attorney Docket No. NANO-01032US1; U.S. patent application Ser. No. 11/177,639, entitled “Patterned Media for a High Density Data Storage Device,” by Zhaohui Fan et al., filed Jul. 8, 2005, Attorney Docket No. NANO-01033US0; U.S. patent application Ser. No. 11/177,062, entitled “Method for Forming Patterned Media for a High Density Data Storage Device,” by Zhaohui Fan et al., filed Jul. 8, 2005, Attorney Docket No. NANO-01033US1; U.S. patent application Ser. No. 11/177,599, entitled “High Density Data Storage Devices with Read/Write Probes with Hollow or Reinforced Tips,” by Nickolai Belov, filed Jul. 8, 2005, Attorney Docket No. NANO-01034US0; U.S. patent application Ser. No. 11/177,731, entitled “Methods for Forming High Density Data Storage Devices with Read/Write Probes with Hollow or Reinforced Tips,” by Nickolai Belov, filed Jul. 8, 2005, Attorney Docket No. NANO-01034US1; U.S. patent application Ser. No. 11/177,642, entitled “High Density Data Storage Devices with Polarity-Dependent Memory Switching Media,” by Donald E. Adams, et al., filed Jul. 8, 2005, Attorney Docket No. NANO-01035US0; U.S. patent application Ser. No. 11/178,060, entitled “Methods for Writing and Reading in a Polarity-Dependent Memory Switching Media,” by Donald E. Adams, et al., filed Jul. 8, 2005, Attorney Docket No. NANO-01035US1; U.S. patent application Ser. No. 11/178,061, entitled “High Density Data Storage Devices with a Lubricant Layer Comprised of a Field of Polymer Chains,” by Yevgeny Vasilievich Anoikin et al., filed Jul. 8, 2005, Attorney Docket No. NANO-01036US0; U.S. patent application Ser. No. 11/004,153, entitled “Methods for Writing and Reading Highly Resolved Domains for High Density Data Storage,” by Thomas F. Rust et al., filed Dec. 3, 2004, Attorney Docket No. NANO-01024US1; U.S. patent application Ser. No. 11/003,953, entitled “Systems for Writing and Reading Highly Resolved Domains for High Density Data Storage,” by Thomas F. Rust, et al., filed Dec. 3, 2004, Attorney Docket No. NANO-01024US2; U.S. patent application Ser. No. 11/004,709, entitled “Methods for Erasing Bit Cells in a High Density Data Storage Device,” by Thomas F. Rust, et al., filed Dec. 3, 2004, Attorney Docket No. NANO-01031 US0; U.S. patent application Ser. No. 11/003,541, entitled “High Density Data Storage Device Having Erasable Bit Cells,” by Thomas F. Rust et al., filed Dec. 3, 2004, Attorney Docket No. NANO-01031US1; U.S. patent application Ser. No. 11/003,955, entitled “Methods for Erasing Bit Cells in a High Density Data Storage Device,” by Thomas F. Rust et al., filed Dec. 3, 2004, Attorney Docket No. NANO-01031US2; U.S. patent application Ser. No. 10/684,661, entitled “Atomic Probes and Media for High Density Data Storage,” filed by Thomas F. Rust, filed Oct. 14, 2003, Attorney Docket No. NANO-01014US1; U.S. Patent Application No. 11,321,136, entitled “Atomic Probes and Media for High Density Data Storage,” by Thomas F. Rust, filed Dec. 29, 2005, Attorney Docket No. NANO-01014US2; U.S. patent application Ser. No. 10/684,760, entitled “Fault Tolerant Micro-Electro Mechanical Actuators,” by Thomas F. Rust, filed Oct. 14, 2003, Attorney Docket No. NANO-01015US1; U.S. patent application Ser. No. 09/465,592, entitled “Molecular Memory Medium and Molecular Memory Integrated Circuit,” by Joannne P. Culver et al., filed Dec. 17, 1999, Attorney Docket No. NANO-01000US0; U.S. Pat. No. 5,453,970, entitled “Molecular Memory Medium and Molecular Memory Disk Drive for Storing Information Using a Tunnelling Probe,” issued Sep. 26, 1995 to Thomas F. Rust, et al.; U.S. Pat. No. 6,982,898, entitled “Molecular Memory Integrated Circuit Utilizing Non-Vibrating Cantilevers,” Attorney Docket No. NANO-0101US1, issued Jan. 3, 2006 to Thomas F. Rust, et al.; U.S. Pat. No. 6,985,377, entitled “Phase Change Media for High Density Data Storage,” Attorney Docket No. NANO-01019US1, issued Jan. 10, 2006 to Thomas F. Rust, et al.
Number | Date | Country | |
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60813975 | Jun 2006 | US |