Claims
- 1. A metal-line structure constructed on a dielectric layer over a semiconductor substrate, which structure comprises:a barrier layer formed at a selected location over the dielectric layer; a metallization layer formed over the barrier layer; an ARC formed over the metallization layer; and a spacer structure formed over all the exposed sidewalls of the barrier layer, the metallization layer and the ARC, without covering a top surface of the ARC, wherein the barrier layer, the ARC and the spacer structure are made of a same material.
- 2. The metal-line structure of claim 1, wherein the dielectric layer is formed from a dielectric material selected from a group consisting of silicon dioxide and BPSG.
- 3. The metal-line structure of claim 1, wherein the barrier layer is formed from a material selected from a group consisting of titanium nitride, titanium, tungsten nitride, and the alloy of titanium and tungsten.
- 4. The metal-line structure of claim 1, wherein the metallization layer is formed from aluminum.
- 5. The metal-line structure of claim 1, wherein the ARC is formed from a material selected from the group consisting of titanium nitride, titanium, tungsten nitride, and the alloy of titanium and tungsten.
- 6. The metal-line structure of claim 1, wherein the spacer structure is formed from a material selected from the group consisting of titanium nitride, titanium, tungsten nitride, and the alloy of titanium and tungsten.
Priority Claims (1)
Number |
Date |
Country |
Kind |
87108188 A |
May 1998 |
TW |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application is a divisional application of, and claims the priority benefit of, U.S. application Ser. No. 09/164,814 filed on Oct. 1, 1998 now U.S. Pat. No. 6,127,252.
US Referenced Citations (7)