G.B. Alers et al., “Trap Assisted Tunneling as a Mechanism of Degradaton and Noise in 2-5 nm Oxides,” IRPS Proc., pp. 76-79 1998. |
S. Baase, Computer Algorithms, New York: Addison-Wesley, 1988, ch. 2, pp. 47-52. |
F. Crupi et al., “On the properties of the gate and substrate current after softbreakdown in ultrathin oxide layers,” IEEE Trans. Elec. Dev., vol. 45, No. 11, pp. 2329-2334, 1998. |
M. Depas et al., “Soft breakdown of ultra-thin gate oxide layers,” IEEE Trans. Elec. Dev., vol. 43, No. 9, pp. 1499-1504, 1996. |
B. Weir et al., “Ultra-Thin Gate Dielectrics: They Break Down, But Do They Fail?” IEDM Tech. Dig., pp. 73-76, 1997. |
E. Wu et al., “Structural Dependence of Dielectric Breakdown in Ultra-Thin Gate Oxides and Its Relationship to Soft Breakdown Modes and Device Failure,” IEDM Tech. Dig., pp. 187-190, 1998. |