Claims
- 1. A semiconductor single crystal fabrication apparatus using a Czochralski Method to produce semiconductor single crystals, in which a shield cylinder is provided for surrounding the semiconductor single crystal being lifted,
- wherein said shield cylinder is capable of raising and lowering and comprises a means for maintaining a region within said shield cylinder within a temperature of 1000.degree. C.-1200.degree. C. through insulation of said region.
- 2. A semiconductor single crystal fabricating apparatus as claimed in claim 1, wherein the shield cylinder comprises a plurality of telescopic ducts, a wire wrapping around a wind-up reel being engaged with an innermost duct of the shield cylinder and a raising and lowering rod is connected with an outermost duct of the shield cylinder, the shield cylinder being driven to extend or retract by rotating the wind-up reel and driven to move upward or downward by raising or lowering the ascend and descend rod.
- 3. A method for fabricating semiconductor single crystals, in which a Czochralski Method is used, a shield cylinder being provided for surrounding the semiconductor single crystal being lifted, the shielded cylinder consisting of a plurality of telescopic ducts, a wire wrapping round a wind-up reel being engaged with an innermost duct of the shield cylinder and a raising and lowering rod being connected with an outermost duct of the shield cylinder, the shield cylinder being driven to telescopically extend or retract by rotating the wind-up reel and driven to move upward or downward by raising or lowering the raising and lowering rod, characterized in that: the wind-up reel telescopically reacts the shield cylinder so that the shield cylinder comprises a means for maintaining the temperature gradient of the semiconductor single crystal temperature within a range from 1000.degree. C. to 1200.degree. C.
- 4. A method of fabricating a semiconductor single crystal by using the apparatus according to claim 2, comprising the step of:
- driving the wind-up reel to telescopically retract the shield cylinder and the shield cylinder is lowered near the melt surface to create a zone and to keep a portion of the semiconductor single crystal being pulled up cool, wherein the temperature gradient of the semiconductor single crystal can be magnified when it passes through the zone whose temperature is within a range from melting point to 1300.degree. C.
- 5. A method of fabricating a semiconducted single crystal according to claim 3, comprising the step of:
- driving the wind-up reel to telescopically retract the shield cylinder and the shield cylinder is lowered near the melt surface to create a zone and to keep a portion of the semiconductor single crystal being pulled up cool, whereby the temperature gradient of the semiconductor single crystal can be magnified when it passes through the zone whose temperature is within a range from melting point to 1300.degree. C.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-157510 |
May 1996 |
JPX |
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CROSS-REFERENCE TO RELATED APPL ICATIONS
This is a continuation-in-part of U.S. application Ser. No. 08/834,603, filed Apr. 7, 1997, now abandoned and the benefit of filing date of which is herein claimed still pending.
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
834603 |
Apr 1997 |
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