Claims
- 1. A method of forming an interconnection pattern, comprising the steps of:
- forming an interconnection layer on a substrate;
- selectively etching said interconnection layer by employing a halogen contained gas, so as to form an interconnection pattern; and
- irradiating said interconnection pattern with ultraviolet rays in an atmosphere including reducing species.
- 2. The method of claim 1, wherein
- said reducing species comprise a gas of H.sub.2, NH.sub.3 or Si.sub.2 H.sub.2.
- 3. The method of claim 1, wherein said reducing species comprise a species from H.sub.2, NH.sub.3 or Si.sub.2 H.sub.2 plasma in a radical state.
- 4. The method of claim 1, wherein
- the pressure of said atmosphere including said reducing species is 0.1-1 Torr.
- 5. The method of claim 1, wherein
- an irradiation intensity of said ultraviolet rays is more than or equal to 50 mW/cm.sup.2.
- 6. The method of claim 1, further comprising
- step of forming an oxide film around a surface of said interconnection pattern after the irradiation of said ultraviolet rays.
- 7. The method of claim 6, wherein
- said step of forming said oxide film comprises the step of irradiating said interconnection pattern with ultraviolet rays in an atmosphere including a gas having a high oxidizing property.
- 8. The method of claim 7, wherein
- the pressure of said atmosphere including said highly oxidizing gas is 1-300 Torr.
- 9. The method of claim 1, further comprising
- the step of forming carbide around the surface of said interconnection pattern after the irradiation of said ultraviolet rays.
- 10. The method of claim 9, wherein
- said step of forming carbide around the surface of said interconnection pattern comprises the step of irradiating said interconnection pattern with ultraviolet rays in an atmosphere of a gas including a carbon atom.
- 11. The method of claim 10, wherein
- said gas including said carbon atom comprises CO.sub.2.
- 12. The method of claim 10, wherein
- said gas including said carbon atom comprises CO.
- 13. The method of claim 9, wherein
- said step of forming carbide around the surface of said interconnection pattern comprises the step of irradiating said interconnection pattern with ultraviolet rays in an atmosphere including a carbon radical.
- 14. The method of claim 1, wherein
- said interconnection layer is made of aluminum.
- 15. A method of forming an interconnection pattern, comprising the steps of:
- forming an interconnection layer on a substrate;
- selectively etching said interconnection layer by employing a halogen contained gas, so as to form an interconnection pattern;
- irradiating said interconnection pattern with ultraviolet rays in a gas including fluorine.
- 16. The method of claim 14, further comprising
- the step of forming an oxide film around a surface of said interconnection pattern after the irradiation of said ultraviolet rays.
- 17. The method of claim 14, further comprising
- the step of forming carbide around the surface of said interconnection pattern after the irradiation of said ultraviolet rays.
- 18. A method of forming an interconnection pattern, comprising the steps of:
- forming an interconnection layer on a substrate;
- applying a resist to the surface of said interconnection layer;
- using said resist as a mask, selectively etching said interconnection layer by employing a halogen contained gas, so as to form the interconnection pattern;
- forming a protective film including halogen on sidewalls of said interconnection layer and of said resist;
- ashing said pattern to remove said resist; and
- removing the halogen from the sidewalls of said interconnection pattern by irradiating the sidewalls of said interconnection pattern with ultraviolet rays in an atmosphere including a reducing species.
- 19. A method of forming an interconnection pattern comprising the steps of:
- forming an interconnection layer on a substrate;
- applying a resist to the surface of said interconnection layer;
- using said resist as a mask, selectively etching said interconnection layer by employing a halogen contained gas, so as to form the interconnection process;
- forming a protective film including halogen on sidewalls of said interconnection layer and of said resist;
- ashing said pattern to remove said resist; and
- forming a carbide layer so as to cover the surface of said interconnection pattern.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-178288 |
Jul 1990 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/683,648 filed Apr. 11, 1991, now U.S. Pat. No. 5,110,394.
US Referenced Citations (6)
Foreign Referenced Citations (2)
Number |
Date |
Country |
57-53966 |
Mar 1982 |
JPX |
1-276720 |
Nov 1989 |
JPX |
Non-Patent Literature Citations (1)
Entry |
1985 Dry Process Symposium, "Si Surface TGreatment Using Deep UV Irradiation", Ikawa et al., Oct. 1985, pp. 25-29. |
Divisions (1)
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Number |
Date |
Country |
Parent |
683648 |
Apr 1991 |
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