Study of Optical Third-Harmonic Generation in Reflection; by C. C. Wang et al; pp. 1079-1082; Physical Review, vol. 185, No. 3, 9/15/69. |
A New Ion Dose Uniformity Measurement Technique; by J. C. Cheng et al; pp. 143-152; Solid State Technology, 11/83. |
Characterization of Ion Implanted Silicon--Applications for IC Process Control; by M. Markert et al; pp. 101-106; S. S. Tech., 11/83. |
High Resolution Dose Uniformity Monitoring of Ion Implanters, Part I; by J. R. Golin et al; pp. 137-141; S. S. Tech., 8/84. |
High Resolution Dose Uniformity Monitoring of Ion Implanters, Part II; by J. R. Golin et al; pp. 289-296; S. S. Tech., 9/84. |
Advances in Data Management for Implantation Process Control; by D. S. Perloff et al; pp. 129-135; S. S. Tech., 2/85. |
A Performance Survey of Production Ion Implanters; by M. I. Current et al; pp. 139-146; S. S. Tech., 2/85. |
Advances in Sheet Resistance Measurements for Ion Implant Monitoring, by W. A. Keenan et al; pp. 143-148; S. S. Tech., 6/85. |
Advanced Methods of Ion Implant Monitoring Using Optical Dosimetry; by J. R. Golin et al.; pp. 155-163; S. S. Tech., 6/85. |
Low Dose Ion Implant Monitoring; by R. O. Deming et al; pp. 163-167; S. S. Tech., 9/85. |
Ion Implant Monitoring with Thermal Wave Technology; by W. L. Smith et al; pp. 85-92; S. S. Tech., 1/86. |
Nonlinear Optical Materials; edited by D. A. B. Miller; Fall Meeting of the Materials Research Society; Dec. 4-6, 1985; pp. 131-133. |
Bulletin of the Amer. Phys. Soc.; Mar. 1985, vol. 30, No. 3; p. 574. |
Mapping of Ion Implanted Wafers; by M. I. Current et al; pp. 487-536; 1984 Academic Press. |
Bulletin-Model 4400 Signal Processing System; by EG&G Princeton Applied Research (11 pages) 1983. |